CN107365968B - A kind of sputtering unit and sputter system - Google Patents
A kind of sputtering unit and sputter system Download PDFInfo
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- CN107365968B CN107365968B CN201710734352.3A CN201710734352A CN107365968B CN 107365968 B CN107365968 B CN 107365968B CN 201710734352 A CN201710734352 A CN 201710734352A CN 107365968 B CN107365968 B CN 107365968B
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- electrode
- microscope carrier
- sputtering unit
- unit according
- middle section
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of sputtering units, including target electrode, bottom electrode, the first microscope carrier, the second microscope carrier and shielding layer, the target electrode is parallel with the bottom electrode and face is arranged, first microscope carrier and second microscope carrier are set on the bottom electrode, and interval is formed between first microscope carrier and second microscope carrier；The shielding layer includes peripheral part and middle section, and the peripheral part and the middle section are surrounded positioned at the middle section neither ipsilateral receiving hole, and first microscope carrier and second microscope carrier are embedded at respectively in two receiving holes.The invention also discloses a kind of sputter systems.There is spaced two microscope carriers in sputtering unit of the invention, the small glass substrate of a piece of specification can be carried respectively, the big glass substrate of a piece of specification can also be carried jointly, when the microscope carrier of certain side is needed replacing or is safeguarded, it only needs to remove corresponding microscope carrier, no replacement is required all microscope carrier, saves maintenance cost.
Description
Technical field
The present invention relates to technical field of vacuum plating more particularly to a kind of sputtering units and sputter system.
Background technique
Vacuum coating technology is the new technology of a kind of novel materials synthesis and processing, is the weight of field of surface engineering technique
Want component part.Vacuum coating technology is the plated film that the surface of solids is coated to one layer of property using physics, chemical means, from
And the surface of solids is made to have wear-resistant, high temperature resistant, corrosion-resistant, anti-oxidant, radiation protection, conduction, magnetic conduction, insulation and decoration etc. many
Better than the superior function of solid material itself, reaches and improve product quality, extend life of product, the energy saving and significant skill of acquisition
The effect of art economic benefit.Therefore vacuum coating technology is known as one of the important technology of most development prospect, and in high skill
Tempting market prospects are shown in the development of art industrialization.This emerging vacuum coating technology is in each neck of national economy
Domain is applied, such as Aeronautics and Astronautics, electronics, information, machinery, petroleum, chemical industry, environmental protection, military affairs field.
Vacuum coating technology, especially sputter can be also used in touching substrate manufacture technique at present, the basic principle is that
Argon gas (Ar) ion is hit into the surface target (target), electricity using glow discharge (glow discharge) in vacuum environment
Cation in slurry can accelerate to rush at as by the negative electrode surface of sputter material, this impact will make the substance of target fly out and sink
Product forms film on substrate.
In general, be provided with the microscope carrier (stage) for placing substrate in the middle part of lower electrode, because in sputtering process, material
Random direction sputtering in source avoids attachment, depositional coating for other structures part in protection cavity, need to use shield and be covered on lower part electricity
The extremely upper part positioned at microscope carrier periphery.
In current single-chamber biplate processing procedure, the general sputter system that lower generation line glass substrate is realized using higher generation line
Journey, for example, using G6 for linear dimension processing G4.5 for line glass substrate when, after shield surface generates abrasion, film layer is by pole
(Peeling) easily is removed from shield, becomes hair dirt source, pollutes vacuum environment, formation plated film is bad, since G6 is for line and G4.5 generation
The glass substrate size of line simultaneously mismatches, and the microscope carrier for being located at two panels G4.5 for the glass substrate periphery of line can all generate difference
The damage of degree, and when upper electrode (target end) occur arc phenomenon (Arcing) when can also damage deposition film layer, carry
Platform and shield need replacing monolith G6 when being safeguarded for the microscope carrier and shield of line, maintenance cost are caused to increase.
Summary of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of sputtering unit and sputter systems, can reduce dimension
Protect cost.
In order to achieve the above purpose, present invention employs the following technical solutions:
A kind of sputtering unit, including target electrode, bottom electrode, the first microscope carrier, the second microscope carrier and shielding layer, the target electricity
Pole is parallel with the bottom electrode and face is arranged, and first microscope carrier and second microscope carrier are set on the bottom electrode,
And interval is formed between first microscope carrier and second microscope carrier；The shielding layer includes peripheral part and middle section, institute
It states peripheral part and the middle section is surrounded positioned at the middle section neither ipsilateral receiving hole, first microscope carrier and institute
The second microscope carrier is stated to be embedded at respectively in two receiving holes.
As one of embodiment, the outer surface of first microscope carrier and second microscope carrier is enclosed with insulating layer.
As one of embodiment, adhesive layer is filled between the shielding layer and the bottom electrode.
As one of embodiment, first microscope carrier and second microscope carrier bottom are convexly equipped with the first protrusion respectively
The bottom notch of portion and the second lug boss, the peripheral part inner wall forms step surface, first lug boss and described second
Lug boss is bonded with the step surface respectively.
As one of embodiment, the bottom electrode includes first electrode and second electrode, the first electrode
It is adjacent with the second electrode and be grounded respectively.
As one of embodiment, first microscope carrier fits in the first electrode surface, second microscope carrier
Fit in the second electrode surface.
As one of embodiment, the one side of the first electrode towards the second electrode is equipped with boss, described
The one side of second electrode towards the first electrode is equipped with recess portion, and the boss is embedded in the recess portion.
As one of embodiment, the sputtering unit further includes multiple fasteners, and the fastener will be described
First electrode and the second electrode are fixed on bracket.
As one of embodiment, a fastener sequentially passes through the second electrode and the first electrode
It fixes afterwards on the bracket.
Another object of the present invention is to provide a kind of sputter systems, including radio-frequency power supply, reaction chamber and the sputter
Device, the radio-frequency power supply connect the target electrode, and the sputtering unit is set in the reaction chamber.
There is spaced two microscope carriers in sputtering unit of the invention, the small glass of a piece of specification can be carried respectively
Substrate can also carry the big glass substrate of a piece of specification jointly, when the microscope carrier of certain side is needed replacing or safeguarded, it is only necessary to
Corresponding microscope carrier is removed, no replacement is required all microscope carrier saves maintenance cost.In addition, bottom electrode can also be made
It is made and respectively corresponds two electrodes of two blocks of microscope carriers and can only dismantle and wherein damage when a lateral electrode is needed replacing or safeguarded
Electrode.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the sputter system of the embodiment of the present invention；
Fig. 2 is the partial cutaway view of the sputtering unit of the embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further described.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and do not have to
It is of the invention in limiting.
Refering to fig. 1, the sputter system of the embodiment of the present invention includes being used in radio-frequency power supply 80, reaction chamber 90 and reaction chamber 90
Complete the sputtering unit of sputter movement, wherein sputtering unit includes target electrode 10, bottom electrode 20, the first microscope carrier 30, second load
Platform 40 and shielding layer 50, target electrode 10 is parallel with bottom electrode 20 and face is arranged, and the first microscope carrier 30 and the second microscope carrier 40 are set
In on bottom electrode 20, and interval is formed between the first microscope carrier 30 and the second microscope carrier 40；Shielding layer 50 includes 51 He of peripheral part
Middle section 52, peripheral part 51 and middle section 52 are surrounded positioned at the neither ipsilateral receiving hole of middle section 52, the first microscope carrier
30 and second microscope carrier 40 be embedded in two receiving holes respectively.Radio-frequency power supply 80 connects target electrode 10, for mentioning for sputter movement
For high-frequency alternating current, under the vacuum environment in reaction chamber 90, argon gas is applied high pressure and ionizes generation plasma-based, and ion is through electricity
Hit 10 surface of target electrode after accelerating, the substrate P surface that target atom is sputtered onto 20 side of bottom electrode is deposited and
Form film.
Reaction chamber 90 has air inlet and exhaust outlet, inert gas can be filled with by air inlet and is discharged by exhaust outlet, arranges
Port is preferably placed at 90 bottom of reaction chamber.Bracket 70,70 bottom of bracket are specifically fixed in the bottom interior wall of reaction chamber 90
With the connecting pin for being connected to reaction chamber 90, gas flow space is formed between connecting pin, bottom electrode 20 is fixed on bracket 70
On, exhaust outlet is located at immediately below bracket 70.
The outer surface of first microscope carrier 30 and the second microscope carrier 40 is enclosed with insulating layer, and preferably bottom electrode 20 is aluminium, this is absolutely
Edge layer uses Al2O3, shielding layer 50 is preferably shielded layer made of insulating materials, can obstruct voltage and pass through, and it is existing to reduce electric arc
As.Bottom electrode 20 is also made into individual first electrode 21 and second electrode 22,22 phase of first electrode 21 and second electrode
It is adjacent and be grounded respectively.First microscope carrier 30 fits in 21 surface of first electrode, and the second microscope carrier 40 fits in 22 surface of second electrode, the
The flush on the surface of one microscope carrier 30 and the second microscope carrier 40 and shielding layer 50, by filling out between shielding layer 50 and bottom electrode 20
It fills adhesive layer S and combines.When the microscope carrier or electrode damage of certain side on bracket 70, can easily to microscope carrier or electrode into
Row is individually replaced, and without replacing all microscope carrier or electrode, convenient disassembly simultaneously, and reduces maintenance cost.
As shown in connection with fig. 2, the first electrode 21 of the present embodiment towards second electrode 22 one side be equipped with boss 210, second
The one side of electrode 22 towards first electrode 21 is equipped with recess portion, by the way that boss 210 to be embedded in recess portion, first electrode 21 and second
Electrode 22 can be reliably combined together, and convenient for disassembly and assembly.In addition, the middle part of first electrode 21 and second electrode 22 may be used also
To be worn together using fastener 60, fastener 60 is fixed on bracket 70 after sequentially passing through second electrode 22 and first electrode 21
On, the surrounding of first electrode 21 and second electrode 22 can also be fixed on bracket 70 by fastener 60, realize bottom electrode
20 comprehensive fixation.
The present invention can improve on the high sputtering unit for line of big specification, allow to the low of compatible small dimension
For line pdm substrate, height is carried out cutting segmentation first for the microscope carrier and bottom electrode of line, forms muti-piece small microscope carrier and bottom
Electrode, then the bottom electrode small to every piece after cutting coats insulating layer, handles shielding layer, makes shape in the middle part of shielding layer
At the middle section being filled between microscope carrier, finally fixed between two pieces of small bottom electrodes using fastener, then carry out other
The fixation at position.Since the gap between microscope carrier also has shielding layer, avoids and change gap formation arc phenomenon, into one
Step protects microscope carrier.When needing to carry out sputter to large-size substrate, large-size substrate can be placed on the first microscope carrier 30 simultaneously
On the second microscope carrier 40, surrounding is bonded with the peripheral part 51 of shielding layer 50 respectively, even film layer can be made to tile；Work as needs
It can respectively place a plate base when carrying out sputter to small size substrate, on the first microscope carrier 30 and the second microscope carrier 40, the four of every plate base
Week is bonded with the peripheral part 51 of shielding layer 50 and middle section 52 respectively, it is also ensured that even film layer deposition, it will not be light
It is also easy to produce film layer glass or arc phenomenon.
Further, it is also convexly equipped with the first lug boss 300 and second respectively in the first microscope carrier 30 and 40 bottom of the second microscope carrier
Lug boss 400, correspondingly, the bottom notch of 51 inner wall of peripheral part form step surface, and the first lug boss 300 and second is convex
It plays portion 400 to be bonded with step surface respectively, the first microscope carrier 30 and the second microscope carrier 40 fit to first electrode 21 and second electrode respectively
After on 22, shielding layer 50 is put into from top to bottom, and the step surface of the peripheral part 51 of shielding layer 50 is to the first microscope carrier 30 and second
The first lug boss 300 and the second lug boss 400 of microscope carrier 40 are supported, and are pressed in corresponding electrode surface, dismounting
It is convenient.
There is spaced two microscope carriers in sputtering unit of the invention, the small glass of a piece of specification can be carried respectively
Substrate can also carry the big glass substrate of a piece of specification jointly, when the microscope carrier of certain side is needed replacing or safeguarded, it is only necessary to
Corresponding microscope carrier is removed, no replacement is required all microscope carrier saves maintenance cost.In addition, bottom electrode can also be made
It is made and respectively corresponds two electrodes of two blocks of microscope carriers and can only dismantle and wherein damage when a lateral electrode is needed replacing or safeguarded
Electrode.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (9)
1. a kind of sputtering unit, which is characterized in that carried including target electrode (10), bottom electrode (20), the first microscope carrier (30), second
Platform (40) and shielding layer (50), the target electrode (10) is parallel with the bottom electrode (20) and face is arranged, and described first
Microscope carrier (30) and second microscope carrier (40) are set on the bottom electrode (20), and first microscope carrier (30) and described second
Interval is formed between microscope carrier (40)；The shielding layer (50) includes peripheral part (51) and middle section (52), the outer part
Point (51) and the middle section (52) are surrounded positioned at the middle section (52) neither ipsilateral receiving hole, first microscope carrier
(30) it is embedded in two receiving holes respectively with second microscope carrier (40)；The bottom electrode (20) includes first electrode
(21) and second electrode (22), the first electrode (21) and the second electrode (22) are adjacent and be grounded respectively.
2. sputtering unit according to claim 1, which is characterized in that first microscope carrier (30) and second microscope carrier
(40) outer surface is enclosed with insulating layer.
3. sputtering unit according to claim 1, which is characterized in that the shielding layer (50) and the bottom electrode (20)
Between be filled with adhesive layer (S).
4. sputtering unit according to claim 1, which is characterized in that first microscope carrier (30) and second microscope carrier
(40) bottom is convexly equipped with the first lug boss (300) and the second lug boss (400), the bottom of peripheral part (51) inner wall respectively
Recess forms step surface, and first lug boss (300) and second lug boss (400) are bonded with the step surface respectively.
5. sputtering unit according to claim 1 to 4, which is characterized in that first microscope carrier (30) fits in described
First electrode (21) surface, second microscope carrier (40) fit in the second electrode (22) surface.
6. sputtering unit according to claim 1 to 4, which is characterized in that the first electrode (21) is towards described
The one side of two electrodes (22) is equipped with boss (210), and the one side of second electrode (22) towards the first electrode (21) is equipped with
Recess portion, the boss (210) are embedded in the recess portion.
7. sputtering unit according to claim 6, which is characterized in that further include multiple fasteners (60), the fastener
(60) first electrode (21) and the second electrode (22) are fixed on bracket (70).
8. sputtering unit according to claim 7, which is characterized in that a fastener (60) sequentially passes through described
It is fixed on the bracket (70) after two electrodes (22) and the boss (210) of the first electrode (21).
9. a kind of sputter system, which is characterized in that including radio-frequency power supply (80), reaction chamber (90) and any institute of claim 1-8
The sputtering unit stated, the radio-frequency power supply (80) connect the target electrode (10), and the sputtering unit is set to the reaction chamber
(90) in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710734352.3A CN107365968B (en) | 2017-08-24 | 2017-08-24 | A kind of sputtering unit and sputter system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710734352.3A CN107365968B (en) | 2017-08-24 | 2017-08-24 | A kind of sputtering unit and sputter system |
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| Publication Number | Publication Date |
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| CN107365968A CN107365968A (en) | 2017-11-21 |
| CN107365968B true CN107365968B (en) | 2019-09-17 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4399016A (en) * | 1981-03-12 | 1983-08-16 | Anelva Corporation | Plasma device comprising an intermediate electrode out of contact with a high frequency electrode to induce electrostatic attraction |
| CN101353778A (en) * | 2007-07-27 | 2009-01-28 | 鸿富锦精密工业（深圳）有限公司 | Sputtering type film coating apparatus and film coating method |
| CN102400108A (en) * | 2011-10-18 | 2012-04-04 | 友达光电股份有限公司 | Thin film deposition machine and bearing part thereof |
| CN1737190B (en) * | 2004-08-20 | 2012-05-23 | Jds尤尼弗思公司 | Magnetic control sputtering device |
| CN106480415A (en) * | 2015-08-28 | 2017-03-08 | 株式会社半导体能源研究所 | Film formation device |
-
2017
- 2017-08-24 CN CN201710734352.3A patent/CN107365968B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4399016A (en) * | 1981-03-12 | 1983-08-16 | Anelva Corporation | Plasma device comprising an intermediate electrode out of contact with a high frequency electrode to induce electrostatic attraction |
| CN1737190B (en) * | 2004-08-20 | 2012-05-23 | Jds尤尼弗思公司 | Magnetic control sputtering device |
| CN101353778A (en) * | 2007-07-27 | 2009-01-28 | 鸿富锦精密工业（深圳）有限公司 | Sputtering type film coating apparatus and film coating method |
| CN102400108A (en) * | 2011-10-18 | 2012-04-04 | 友达光电股份有限公司 | Thin film deposition machine and bearing part thereof |
| CN106480415A (en) * | 2015-08-28 | 2017-03-08 | 株式会社半导体能源研究所 | Film formation device |
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| Publication number | Publication date |
|---|---|
| CN107365968A (en) | 2017-11-21 |
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