CN102179970A - Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material - Google Patents
Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material Download PDFInfo
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- CN102179970A CN102179970A CN2011100516098A CN201110051609A CN102179970A CN 102179970 A CN102179970 A CN 102179970A CN 2011100516098 A CN2011100516098 A CN 2011100516098A CN 201110051609 A CN201110051609 A CN 201110051609A CN 102179970 A CN102179970 A CN 102179970A
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- plated film
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- heat conducting
- heat conduction
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Abstract
The invention provides a heat conducting material, a preparation process thereof and an LED (light-emitting diode) circuit board using the heat conducting material, wherein the heat conducting material consists of a base material and a heat conducting coating arranged on the base material, and the heat conducting coating consists of an Si coated film arranged on the base material through a magnetron sputtering process, a DLC (Diamond like carbon) coated film arranged on the Si coated film through an ion beam technology, and a Cu coated film arranged on the DLC coated film through a magnetron sputtering process. The invention has the following main beneficial effects: a DLC coating is deposited on an insulating base plate, the heat conducting material has the characteristics of ultrahigh heat conducting property and good insulating property, and the preparation process is simple and high-efficient, thus having good popularization value.
Description
Technical field
The present invention relates to a kind of Heat Conduction Material and preparation technology thereof, and the LED wiring board that uses this Heat Conduction Material, the coating material technical field belonged to.
Background technology
In recent years, various coating technologies constantly develop, for industry manufacturing and daily life are brought many progress and facility.Rely on coating technology, can make product or parts obtain better surface property, thereby remedy some characteristic that material itself is not had.Diamond-like coating (Diamond-like Carbon), or abbreviation DLC coating is to contain diamond lattic structure (sp
3Key) and graphite-structure (sp
2Key) metastable amorphous substance.
In the coating technology, physical vapour deposition (PVD) is meant by processes such as evaporation, ionization or sputters, produces metallic and is deposited on surface of the work with reacting gas reaction formation compound, is called for short PVD.PVD coating technique commonly used at present mainly is divided three classes, vacuum vapor plating, vacuum sputtering plating and vacuum ionic bundle plated film.Wherein, sputter coating is to make during with the high-energy particle bombardment surface of solids particle of the surface of solids obtain energy and the surface of overflowing, and is deposited on the substrate.
Industrial, some thermals source or light source, for example emerging LED device or module often need quick conductive and heat radiation, and simultaneously, some occasions also need Heat Conduction Material to have good insulation performance.With another heat conductivility preferably material graphite (thermal conductivity factor of graphite is about 450W/mK) compare, the DLC coating not only has higher thermal conductivity factor, on all directions, has simultaneously the same capacity of heat transmission, and graphite only has above heat conductivility in single plane, and heat conductivility in vertical direction is relatively poor.Graphite itself is conductive material simultaneously, so if the LED wiring board of making as heat conducting base material with graphite needs multiple supplementary insulation technology and causes cost to increase.Therefore, the material of satisfied simultaneously insulation and high thermal conductivity is often very expensive.
Summary of the invention
The objective of the invention is to solve above-mentioned technical problem, provide a kind of employing to have the Heat Conduction Material of high-termal conductivity and high-insulativity simultaneously.
Purpose of the present invention is achieved through the following technical solutions:
A kind of Heat Conduction Material comprises base material and is arranged on heat conducting coating on the base material, and described heat conducting coating comprises by magnetron sputtering technique is located at Si layer plated film on the described base material; Be located at DLC layer plated film on the described Si layer plated film by ion beam technology; Be located at Cu layer plated film on the described DLC layer plated film by magnetron sputtering technique.
Preferably, the thickness of described Si layer plated film is 1 ± 0.1 micron, and that uses in the magnetron sputtering technique of described generation Si layer plated film is the single crystalline Si target of purity more than 99.9999%.
Preferably, the thickness of described DLC layer plated film is 2 ± 0.2 microns.
Preferably, the thickness of described Cu layer plated film is 5 ± 0.5 microns, use in the magnetron sputtering technique of described generation Cu layer plated film as purity at the Cu target more than 95%.
Preferably, the comprehensive thermal conductivity factor of Heat Conduction Material is more than or equal to 480W/mK, and is breakdown voltage resistant more than or equal to 500V.
Preferably, described base material is an insulating substrate.
The present invention has also disclosed a kind of preparation technology of Heat Conduction Material, comprises the steps:
(1) base material is clamped in the vacuum film coating chamber, vacuum film coating chamber is bled, make it to reach 1 * 10
-5The above vacuum of Pa;
(2) feed the hydrogen of throughput between 500～900sccm in the plated film vacuum chamber, use ion beam that the hydrogen of introducing is carried out ionization and bombarding base material, ion energy is 1, more than the 900eV during ionization;
(3) in the plated film vacuum chamber, feed the argon gas of throughput between 50～70sccm, use the non-balance magnetically controlled sputter negative electrode that base material is carried out the Si plated film, plated film uses purity at 99.9999% above single crystalline Si target, applies the pulse direct current of voltage 600～800V, frequency 40～60kHz on the described negative electrode;
(4) in the plated film vacuum chamber, feed the acetylene gas of throughput between 300～500sccm, use ion beam base material to be carried out the plated film of DLC, during plated film by the ion energy of ion beam ionization 1, more than the 200eV, apply more than the 5000V DC pulse bias voltage of pulse frequency 60～80kHz on the negative electrode;
(5) feed the argon gas of throughput between 50～70sccm in the plated film vacuum chamber, use the non-balance magnetically controlled sputter negative electrode that base material is carried out the plated film of Cu, plated film uses purity at the Cu target more than 95%, applies the pulse direct current of voltage 300～500V on the described negative electrode.
Wherein, the bombardment time in described the 2nd step is 45 minutes, and the plated film time in described the 3rd step is 50 minutes, and the plated film time in described the 4th step is 150 minutes, and the plated film time in described the 5th step is 30 minutes.
The present invention also provides a kind of LED wiring board, comprising: base material, be arranged on the heat conducting coating on the base material, and be arranged on the LED particle on the heat conducting coating, described heat conducting coating comprises by magnetron sputtering technique is located at Si layer plated film on the described base material; Be located at DLC layer plated film on the described Si layer plated film by ion beam technology; Process the copper foil circuit that obtains by the Cu layer plated film of being located at by magnetron sputtering technique on the described DLC layer plated film; Described LED particle is connected in the described copper foil circuit.
Preferably, described base material is an aluminium base.
Beneficial effect of the present invention is mainly reflected in: adopt physical gas phase deposition technology, integrated application magnetron sputtering technique and ion beam technology, deposition DLC coating on the insulating materials substrate makes Heat Conduction Material have the super-high heat-conductive performance and has the good insulation performance performance.This Heat Conduction Material is used as the wiring board heat dispersion excellence of led light source module, good insulating, and the preparation technology of Heat Conduction Material is also simple efficient, has excellent popularization and is worth.
Description of drawings
Fig. 1 is the schematic diagram of Heat Conduction Material of the present invention.
Fig. 2 is the schematic diagram that has used the LED wiring board of Heat Conduction Material of the present invention.
The specific embodiment
The present invention is described in detail below in conjunction with embodiment:
The present invention comprehensively adopts magnetron sputtering technique and the ion beam technology in the PVD technology, selects different material such as Si, H
2, C
2H
2And Cu, change parameter such as pressure, bias voltage in deposition process, the Heat Conduction Material of tool heat conducting coating on the preparation base material.
Simply introduce the operation principle of magnetron sputtering technique and ion beam technology at this.
Magnetron sputtering technique is to make during with the high-energy particle bombardment surface of solids particle of the surface of solids obtain energy and the surface of overflowing, and is deposited on the substrate.Ion beam technology is meant that the gas that is introduced into is ionized under the electromagnetic field acting in conjunction of ion beam under vacuum environment; Ionizable ion is accelerated under the electric field action between ion beam and the substrate, and with the bombardment of the form of high energy particle or be deposited on the substrate; The gas that is introduced into may be Ar, H according to the needs of technology
2Or C
2H
2Deng, thereby finish technologies such as ion etching cleaning and ion beam depositing.But for the selection of different-energy and different preparation technologies, prepared product just can obtain different performances.
Heat conducting coating of the present invention has multicoating, and the good binding ability is arranged between each plated film.The Heat Conduction Material of final products has the super-high heat-conductive performance and has the good insulation performance performance, and comprehensive thermal conductivity factor reaches 480W/mK, breakdown voltage resistant reaching more than 500 volts.This Heat Conduction Material can be used as the wiring board of led light source module, or the heat conduction and heat radiation device.
Preparing the employed base material of described Heat Conduction Material can be for insulating substrate or for the non-base material of insulation, as aluminium base.
Prepare the employed magnetic control spattering target of described heat conducting coating and comprise 2 kinds of solid materials: single crystalline Si (purity is more than 99.9999%) and Cu (purity is more than 95%).Employed gas comprises hydrogen (purity is more than 99.999%), argon gas (purity is more than 99.999%) and acetylene gas (purity is more than 98%) in the reactive sputtering process.The power supply that magnetron sputtering adopted is a dc source.
The technical process of preparation Heat Conduction Material is roughly as follows:
At first, base material is cleaned up in supersonic wave cleaning machine, carries out step then successively:
(1) base material is clamped in the vacuum film coating chamber, vacuum film coating chamber is bled, make it to reach 1 * 10
-5The above vacuum of Pa;
(2) feed the hydrogen of throughput between 500～900sccm in the plated film vacuum chamber, use ion beam that the hydrogen of introducing is carried out ionization and bombarding base material, ion energy is 1, more than the 900eV during ionization;
Bombardment time is 40 to 50 minutes in this step, is preferably 45 minutes;
(3) in the plated film vacuum chamber, feed the argon gas of throughput between 50～70sccm, use the non-balance magnetically controlled sputter negative electrode that base material is carried out the Si plated film, plated film uses purity at 99.9999% above single crystalline Si target, applies the pulse direct current of voltage 600～800V, frequency 40～60kHz on the described negative electrode;
The plated film time is 40 to 60 minutes in this step, is preferably 50 minutes, about 1 micron of the Si layer thickness that plates, be preferably 1 ± 0.1 micron;
(4) in the plated film vacuum chamber, feed the acetylene gas of throughput between 300～500sccm, use ion beam base material to be carried out the plated film of DLC, during plated film by the ion energy of ion beam ionization 1, more than the 200eV, apply more than the 5000V DC pulse bias voltage of pulse frequency 60～80kHz on the negative electrode;
The plated film time is 120 to 180 minutes in this step, is preferably 150 minutes, about 2 microns of the DLC layer thicknesses that plates, be preferably 2 ± 0.2 microns;
(5) feed the argon gas of throughput between 50～70sccm in the plated film vacuum chamber, use the non-balance magnetically controlled sputter negative electrode that base material is carried out the plated film of Cu, plated film uses purity at the Cu target more than 95%, applies the pulse direct current of voltage 300～500V on the described negative electrode.
20 to 40 minutes plated film time was preferably 30 minutes in this step, about 5 microns of the Cu layer thicknesses that plates, be preferably 5 ± 0.5 microns.
As Fig. 1, use above-mentioned technology, the Heat Conduction Material that produces comprises base material 1 and is arranged on heat conducting coating on the base material 1, described heat conducting coating comprises by magnetron sputtering technique is located at Si layer plated film 2 on the described base material; Be located at DLC layer plated film 3 on the described Si layer plated film by ion beam technology; Be located at Cu layer plated film 4 on the described DLC layer plated film by magnetron sputtering technique.
Use this Heat Conduction Material, can make the good thermal component of multiple needs, especially simultaneously insulation is had the parts of requirement.
By selecting the base material of insulating substrate as Heat Conduction Material for use, final Heat Conduction Material can obtain especially excellent insulating properties.
Below by specific embodiment the application of Heat Conduction Material of the present invention on industry described.
Fig. 2 is the LED wiring board that has used Heat Conduction Material of the present invention, and it comprises Heat Conduction Material and the LED particle 5 that is installed on the Heat Conduction Material, and the Cu layer plated film of Heat Conduction Material handled formation copper foil circuit 41 through further processing, and LED particle 5 is installed in copper foil circuit 41.
In the present embodiment, the base material 1 of Heat Conduction Material is metal material, preferably aluminium base; Foregoing, substrate 1 top is a Si layer plated film 2; Si layer plated film top is a DLC layer plated film 3; Copper foil circuit 41 for further being processed to form on the DLC layer plated film through Cu layer plated film 4.
LED light-emitting particles 5 is arranged in copper foil circuit 41 tops, and the positive pole of LED light-emitting particles 5 and negative pole insert in the copper foil circuit, with controlled and power supply and luminous.
The direction of distributing that is oriented to heat of the arrow among Fig. 2, as Fig. 2, the heat major part that the LED light-emitting particles produces is outwards distributed by Heat Conduction Material.
The LED wiring board of this specific embodiment has excellent heat-conducting effect, and as following table one, the comprehensive thermal conductivity factor of the aluminium base of band Heat Conduction Material of the present invention reaches 480W/mK, considerably beyond the 1-3W/mK of conventional aluminium substrate and about 110W/mK of ceramic substrate.
| LED wiring board material | The conventional aluminium substrate | Ceramic substrate | The aluminium base of band Heat Conduction Material |
| Comprehensive |
1～3W/mK | ～110W/mK | 480W/mK |
| Breakdown voltage resistant | ＞500V | ＞500V | ＞500V |
Table one
Heat Conduction Material of the present invention also can be used to make other product, as making led light source heat conduction and heat radiation device etc.
Yet the Heat Conduction Material that makes by above-mentioned preparation technology not only is confined to make the said goods, and it has the wide industrial prospect, can be applied to the multiple occasion that needs high thermal conductivity and insulating properties.
Claims (10)
1. Heat Conduction Material is characterized in that: comprise base material and be arranged on heat conducting coating on the base material that described heat conducting coating comprises by magnetron sputtering technique is located at Si layer plated film on the described base material; Be located at DLC layer plated film on the described Si layer plated film by ion beam technology; Be located at Cu layer plated film on the described DLC layer plated film by magnetron sputtering technique.
2. Heat Conduction Material according to claim 1 is characterized in that: the thickness of described Si layer plated film is 1 ± 0.1 micron, and that uses in the magnetron sputtering technique of described generation Si layer plated film is the single crystalline Si target of purity more than 99.9999%.
3. Heat Conduction Material according to claim 1 is characterized in that: the thickness of described DLC layer plated film is 2 ± 0.2 microns.
4. Heat Conduction Material according to claim 1 is characterized in that: the thickness of described Cu layer plated film is 5 ± 0.5 microns, use in the magnetron sputtering technique of described generation Cu layer plated film as purity at the Cu target more than 95%.
5. Heat Conduction Material according to claim 4 is characterized in that: its comprehensive thermal conductivity factor is more than or equal to 480W/mK, and is breakdown voltage resistant more than or equal to 500V.
6. Heat Conduction Material according to claim 1 is characterized in that: described base material is an insulating substrate.
7. the preparation technology of a Heat Conduction Material as claimed in claim 1 is characterized in that: in turn includes the following steps,
(1) base material is clamped in the vacuum film coating chamber, vacuum film coating chamber is bled, make it to reach 1 * 10
-5The above vacuum of Pa;
(2) feed the hydrogen of throughput between 500～900sccm in the plated film vacuum chamber, use ion beam that the hydrogen of introducing is carried out ionization and bombarding base material, ion energy is 1, more than the 900eV during ionization;
(3) in the plated film vacuum chamber, feed the argon gas of throughput between 50～70sccm, use the non-balance magnetically controlled sputter negative electrode that base material is carried out the Si plated film, plated film uses purity at 99.9999% above single crystalline Si target, applies the pulse direct current of voltage 600～800V, frequency 40～60kHz on the described negative electrode;
(4) in the plated film vacuum chamber, feed the acetylene gas of throughput between 300～500sccm, use ion beam base material to be carried out the plated film of DLC, during plated film by the ion energy of ion beam ionization 1, more than the 200eV, apply on the negative electrode that 5000V is above, the DC pulse bias voltage of pulse frequency 60～80kHz;
(5) feed the argon gas of throughput between 50～70sccm in the plated film vacuum chamber, use the non-balance magnetically controlled sputter negative electrode that base material is carried out the plated film of Cu, plated film uses purity at the Cu target more than 95%, applies the pulse direct current of voltage 300～500V on the described negative electrode.
8. the preparation technology of heat conducting coating according to claim 7, it is characterized in that: the bombardment time in described the 2nd step is 45 minutes, the plated film time in described the 3rd step is 50 minutes, the plated film time in described the 4th step is 150 minutes, and the plated film time in described the 5th step is 30 minutes.
9. a LED wiring board comprises, base material, is arranged on the heat conducting coating on the base material, and is arranged on the LED particle on the heat conducting coating, it is characterized in that: described heat conducting coating comprises by magnetron sputtering technique is located at Si layer plated film on the described base material; Be located at DLC layer plated film on the described Si layer plated film by ion beam technology; Process the copper foil circuit that obtains by the Cu layer plated film of being located at by magnetron sputtering technique on the described DLC layer plated film; Described LED particle is connected in the described copper foil circuit.
10. LED wiring board according to claim 9 is characterized in that: described base material is an aluminium base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110051609.8A CN102179970B (en) | 2011-03-03 | 2011-03-03 | Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material |
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|---|---|---|---|
| CN201110051609.8A CN102179970B (en) | 2011-03-03 | 2011-03-03 | Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material |
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| CN102179970B CN102179970B (en) | 2014-05-14 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102740591A (en) * | 2012-07-09 | 2012-10-17 | 苏州热驰光电科技有限公司 | Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof |
| CN103331968A (en) * | 2013-07-04 | 2013-10-02 | 苏州生益科技有限公司 | High thermal conductive fiberglass cloth base laminate |
| CN107706280A (en) * | 2016-08-08 | 2018-02-16 | 深圳市斯迈得半导体有限公司 | A kind of manufacture method of the LED light source manufactured by vacuum sputtering technique |
| JPWO2017110404A1 (en) * | 2015-12-25 | 2018-05-10 | 三井金属鉱業株式会社 | Copper foil with carrier, copper foil with resin, and method for producing printed wiring board |
| CN108286037A (en) * | 2017-12-29 | 2018-07-17 | 昆山米泰克精密电子组件有限公司 | A kind of preparation method of Kato surface insulation nanoscale coating |
| US11377727B2 (en) * | 2020-06-11 | 2022-07-05 | Fook Chi Mak | Method for preparing bactericidal film on fiber cloth |
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| CN1294545A (en) * | 1999-03-08 | 2001-05-09 | 时至准钟表股份有限公司 | Resin molding mold and method of forming hard coat on resin molding mold |
| US20100295070A1 (en) * | 2009-05-20 | 2010-11-25 | Intematix Corporation | Light emitting device |
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2011
- 2011-03-03 CN CN201110051609.8A patent/CN102179970B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1294545A (en) * | 1999-03-08 | 2001-05-09 | 时至准钟表股份有限公司 | Resin molding mold and method of forming hard coat on resin molding mold |
| US20100295070A1 (en) * | 2009-05-20 | 2010-11-25 | Intematix Corporation | Light emitting device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102740591A (en) * | 2012-07-09 | 2012-10-17 | 苏州热驰光电科技有限公司 | Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof |
| CN103331968A (en) * | 2013-07-04 | 2013-10-02 | 苏州生益科技有限公司 | High thermal conductive fiberglass cloth base laminate |
| CN103331968B (en) * | 2013-07-04 | 2015-07-15 | 苏州生益科技有限公司 | High thermal conductive fiberglass cloth base laminate |
| JPWO2017110404A1 (en) * | 2015-12-25 | 2018-05-10 | 三井金属鉱業株式会社 | Copper foil with carrier, copper foil with resin, and method for producing printed wiring board |
| CN107706280A (en) * | 2016-08-08 | 2018-02-16 | 深圳市斯迈得半导体有限公司 | A kind of manufacture method of the LED light source manufactured by vacuum sputtering technique |
| CN108286037A (en) * | 2017-12-29 | 2018-07-17 | 昆山米泰克精密电子组件有限公司 | A kind of preparation method of Kato surface insulation nanoscale coating |
| US11377727B2 (en) * | 2020-06-11 | 2022-07-05 | Fook Chi Mak | Method for preparing bactericidal film on fiber cloth |
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| CN102179970B (en) | 2014-05-14 |
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