CN107359220A - 一种具有二维电子气去噪屏蔽环的AlGaN紫外探测器 - Google Patents
一种具有二维电子气去噪屏蔽环的AlGaN紫外探测器 Download PDFInfo
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Abstract
本发明公开了一种具有二维电子气去噪屏蔽环的AlGaN紫外探测器，该探测器从下至上包括衬底、GaN或AlN缓冲层、GaN高掺杂背面导电层、非掺杂GaN层、n型AlGaN有源耗尽区以及p型AlGaN雪崩结；非掺杂GaN层与n型AlGaN有源耗尽区之间构成二维电子气沟道屏蔽结构；p型AlGaN雪崩结的上方设置有雪崩结阳极；探测器还包括各电极结构。本申请可以大幅降低有源区外围及背底产生的暗电流，提高探测器的信噪比和探测效率。器件采用GaN/AlGaN二维结构形成2DEG沟道等电势面作为漏电流和噪声的屏蔽结构，通过2DEG沟道等电势面接地滤除有源区周边和背面衬底的噪声电流，有助于实现低噪声高增益，高信噪比和探测效率的紫外探测器。
Description
技术领域
本发明属于半导体器件领域，具体涉及一种具有二维电子气去噪屏蔽环的AlGaN紫外探测器。
背景技术
紫外探测技术是继红外探测和激光探测技术之后的又一军民两用光电探测技术。AlGaN材料以独特的物理、化学、电学特性成为紫外材料的领军者。AlGaN属于直接带隙半导体，随着合金材料中Al组分的变化，带隙在3.4eV–6.2eV之间连续变化，其带隙对应的峰值响应波长范围是200nm–365nm，因此AlGaN是制作紫外探测器的理想材料之一。AlGaN材料制作的紫外探测器件量子效率高、灵敏度高、紫外可见抑制比大，可完全工作于低背景的日盲波段(240-280nm)。AlGaN紫外探测器可应用于弹预警、精确制导、紫外保密通信、生化分析、明火探测、生物医药分析、海上油监、臭氧浓度监测、太阳紫外指数监测、紫外成像等领域，可对尾焰或者羽烟中释放出大量紫外辐射的飞行目标进行实时探测或有效追踪，在微弱的背景下探测出目标。
低噪声、高增益是高性能紫外雪崩光电探测器的两个关键指标。雪崩光电探测器的噪声和增益可以通过对载流子—电子、空穴碰撞电离率的有效比例的调控来实现，简称碰撞电离工程。研究发现，单载流子(电子或空穴)触发的雪崩击穿过程具有较低过剩噪声因子；而采用碰撞电离系数大的载流子作为触发载流子则可以获得更高的增益。对于GaN材料，空穴碰撞电离系数大于电子碰撞电离系数，因此由空穴触发的GaN雪崩光电探测器具有更高的雪崩增益。但现有的APD结构和PIN结构的雪崩光电探测器都存在器件有源区外围及衬底带来的漏电流和暗激发电流导致的噪声，影响了探测器的信噪比和探测效率。
发明内容
针对现有技术中存在的问题，本发明的目的在于提供一种具有二维电子气去噪屏蔽环的AlGaN紫外探测器，其可以大幅降低有源区外围及背底产生的暗电流，提高探测器的信噪比和探测效率。
为实现上述目的，本发明采用以下技术方案：
一种具有二维电子气去噪屏蔽环的AlGaN紫外探测器，所述探测器从下至上包括衬底、GaN或AlN缓冲层、GaN高掺杂背面导电层、非掺杂GaN层、嵌入所述非掺杂GaN层上部中心的n型AlGaN有源耗尽区以及嵌入所述n型AlGaN有源耗尽区上部中心的p型AlGaN雪崩结；非掺杂GaN层与n型AlGaN有源耗尽区之间构成二维电子气沟道屏蔽结构；p型AlGaN雪崩结的上方设置有雪崩结阳极；非掺杂GaN层与n型AlGaN有源耗尽区的接触位置、跨越所述二维电子气沟道屏蔽结构设置有屏蔽面接地环；所述GaN高掺杂背面导电层的上方、非掺杂GaN层的周向设置有掩埋高掺杂GaN背面噪声吸收电极。
进一步，所述衬底为Si、SiC或者蓝宝石衬底。
进一步，所述探测器中所有电极的引出均采用Ti、Al、Ni、Au合金；或Ti、Al、Ti、Au合金；或Ti、Al、Mo、Au合金制作的欧姆接触形成。
本发明具有以下有益技术效果：
本申请可以大幅降低有源区外围及背底产生的暗电流，提高探测器的信噪比和探测效率。器件采用GaN/AlGaN二维结构形成2DEG沟道等电势面作为漏电流和噪声的屏蔽结构，通过2DEG沟道等电势面接地滤除有源区周边和背面衬底的噪声电流，有助于实现低噪声高增益，高信噪比和探测效率的紫外探测器。
附图说明
图1为本发明具有二维电子气去噪屏蔽环的AlGaN紫外探测器结构示意图；
图2为本发明具有二维电子气去噪屏蔽环的AlGaN紫外探测器中GaN/AlGaN有源区结构工艺制作流程图。
具体实施方式
下面，参考附图，对本发明进行更全面的说明，附图中示出了本发明的示例性实施例。然而，本发明可以体现为多种不同形式，并不应理解为局限于这里叙述的示例性实施例。而是，提供这些实施例，从而使本发明全面和完整，并将本发明的范围完全地传达给本领域的普通技术人员。
如图1-2所示，本发明提供了一种具有二维电子气去噪屏蔽环的AlGaN紫外探测器，该探测器从下至上包括衬底1、GaN或AlN缓冲层2、GaN高掺杂背面导电层3、非掺杂GaN层4、嵌入非掺杂GaN层4上部中心的n型AlGaN有源耗尽区5以及嵌入n型AlGaN有源耗尽区5上部中心的p型AlGaN雪崩结6；非掺杂GaN层4与n型AlGaN有源耗尽区5之间构成二维电子气沟道屏蔽结构7；p型AlGaN雪崩结6的上方设置有雪崩结阳极8；非掺杂GaN层4与n型AlGaN有源耗尽区5的接触位置、跨越二维电子气沟道屏蔽结构7设置有屏蔽面接地环9；GaN高掺杂背面导电层3的上方、非掺杂GaN层4的周向设置有掩埋高掺杂GaN背面噪声吸收电极10。
衬底1为Si、SiC或者蓝宝石衬底。
探测器中所有电极的引出均采用Ti、Al、Ni、Au合金；或Ti、Al、Ti、Au合金；或Ti、Al、Mo、Au合金制作的欧姆接触形成。
本发明的器件制作时在衬底1上首先外延一层GaN或AlN缓冲层2，以使其上的沟道层受到的晶格失配影响减小，并在GaN或AlN缓冲层2上外延一层高掺杂背面GaN导电层3(后续工艺中通过在器件有源区周边通过台阶刻蚀并制作欧姆接触作为背面噪声吸收电极的引出)，然后生长一层厚的非掺杂GaN层4，按图2所示工艺步骤(深槽蚀刻-AlGaN外延-CMP平坦化)刻蚀出深槽结构并外延生长n型AlGaN构造2DEG导电沟道包围的有源区，然后在n型AlGaN有源区中制作雪崩结构和引出电极。
本发明的器件工作时，2DEG屏蔽沟道环接地，掩埋高掺杂GaN背面噪声吸收电极10外加一小的负偏压，而雪崩结阳极8接一合适的负雪崩偏压，使整个n型AlGaN有源区耗尽作为紫外光的吸收区。整个有源吸收区被2DEG沟道面构成的等电势接地面屏蔽，器件除去有源区之外的部分以及整个衬底产生的漏电流将通过2DEG屏蔽沟道和掩埋高掺杂GaN背面噪声吸收电极10滤除，光子入射后，在n型AlGaN有源耗尽区被吸收并形成电子-空穴对，电子漂移到2DEG屏蔽层被导走，而具有高碰撞电离系数的空穴继续漂移至雪崩结区引发雪崩倍增信号，从而实现低噪声高增益的紫外探测信号。
上面所述只是为了说明本发明，应该理解为本发明并不局限于以上实施例，符合本发明思想的各种变通形式均在本发明的保护范围之内。
Claims (3)
1.一种具有二维电子气去噪屏蔽环的AlGaN紫外探测器，其特征在于，所述探测器从下至上包括衬底、GaN或AlN缓冲层、GaN高掺杂背面导电层、非掺杂GaN层、嵌入所述非掺杂GaN层上部中心的n型AlGaN有源耗尽区以及嵌入所述n型AlGaN有源耗尽区上部中心的p型AlGaN雪崩结；非掺杂GaN层与n型AlGaN有源耗尽区之间构成二维电子气沟道屏蔽结构；p型AlGaN雪崩结的上方设置有雪崩结阳极；非掺杂GaN层与n型AlGaN有源耗尽区的接触位置、跨越所述二维电子气沟道屏蔽结构设置有屏蔽面接地环；所述GaN高掺杂背面导电层的上方、非掺杂GaN层的周向设置有掩埋高掺杂GaN背面噪声吸收电极。
2.根据权利要求1所述的具有二维电子气去噪屏蔽环的AlGaN紫外探测器，其特征在于，所述衬底为Si、SiC或者蓝宝石衬底。
3.根据权利要求1所述的具有二维电子气去噪屏蔽环的AlGaN紫外探测器，其特征在于，所述探测器中所有电极的引出均采用Ti、Al、Ni、Au合金；或Ti、Al、Ti、Au合金；或Ti、Al、Mo、Au合金制作的欧姆接触形成。
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| CN114613802A (zh) * | 2022-01-27 | 2022-06-10 | 南京邮电大学 | 一种基于saw的紫外光电探测器 |
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