CN107357142B - Aqueous photoresist stripping liquid and preparation method thereof - Google Patents

Aqueous photoresist stripping liquid and preparation method thereof Download PDF

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CN107357142B
CN107357142B CN201710532273.4A CN201710532273A CN107357142B CN 107357142 B CN107357142 B CN 107357142B CN 201710532273 A CN201710532273 A CN 201710532273A CN 107357142 B CN107357142 B CN 107357142B
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proportion
ether
photoresist stripping
diethylene glycol
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CN107357142A (en
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高立江
胡涛
王太刚
陈海刚
倪芸岚
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Greenda Chemical Co ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only

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Abstract

The invention relates to a water-based photoresist stripping solution and a preparation method thereof, wherein the water-based photoresist stripping solution comprises, by weight, 1-20% of alkoxy alkylamine, 5-50% of protic solvent, 30-80% of aprotic solvent, 10-30% of water, 0.01-1% of additive and 0.005-0.1% of long-carbon-chain fatty alcohol. The preparation method of the etching solution comprises the following steps: adding alkoxy alkylamine, a protic solvent and an aprotic solvent into a mixing kettle in sequence according to a proportion, then adding an additive, long-carbon-chain fatty alcohol and water, stirring and circulating, and filtering. The stripping liquid has strong stripping capability, can effectively remove photoresist residues, can be used for processes of different metal film layers, does not corrode metal wiring at the lower layer, has long service life, and is harmless to human bodies and environment.

Description

Aqueous photoresist stripping liquid and preparation method thereof
Technical Field
The invention relates to a photoresist stripping liquid and a preparation method thereof, in particular to a water-based photoresist stripping liquid and a preparation method thereof.
Background
With the trend of finer patterns, the etching conditions for metal and oxide films become more severe, so that the photoresist is damaged and deteriorated, and after the photoresist is stripped off and removed using a stripping solution, the photoresist still remains on the substrate, resulting in poor products. Meanwhile, the stripping solution contains a certain amount of alkali substance, and there is a possibility that the metal wiring in the lower layer is corroded in the process of stripping and removing the photoresist. In recent years, liquid crystal flat panel display manufacturers have been continuously improving the technology to meet the market demand, and the materials and structures of metal wiring tend to be diversified, so that the stripping liquid is required to have higher compatibility with different metal film layer processes. Along with the improvement of the social development on the environmental protection requirement, the discharge standard and the treatment cost of the stripping liquid waste liquid are continuously improved, and the stripping liquid is required to be harmless to human bodies and the environment when in use and treatment. Therefore, the development of a stripping solution which has strong stripping capability, can effectively remove photoresist residues, can be used for the process of different metal film layers, does not corrode the lower metal wiring and is harmless to human bodies and the environment is of great significance.
In the prior art, patent CN101424888A discloses a photoresist stripping solution, which is composed of sulfone compound, lactone compound and alkyl sulfonic acid, and the stripping solution contains sulfone organic solvent, so that the environmental pollution is large during use and treatment. Patent CN103676504A discloses an aqueous photoresist stripping solution, which is composed of quaternary ammonium hydroxide, alcohol ether, dihydric alcohol, water-soluble organic solvent, surfactant and water. The introduction of strong basic quaternary ammonium hydroxides into the stripping solution may lead to corrosion of the underlying metal. Patent CN101750916A discloses an aqueous photoresist stripping liquid, which is composed of chain amine compound, cyclic amine compound, glycol ether compound, water and corrosion inhibitor. The stripping liquid is only suitable for the substrate with the lower metal film layer of aluminum molybdenum, and cannot be used for other film layer processes.
The currently used water-based stripping liquid has the problems of uniformity and water volatilization during use, water needs to be supplemented or replaced after the stripping liquid is used for a period of time, the service life of the stripping liquid is influenced, the modification requirement on stripping equipment is high, and the use cost of the water-based stripping liquid is increased. The alkaline substance in the stripping solution is mainly organic alkali, and comprises quaternary ammonium hydroxide and amine compounds. Quaternary ammonium hydroxides are highly basic and can cause corrosion of underlying metals, particularly aluminum and copper metal wiring. Part of the aqueous stripping liquid is only suitable for a metal film layer process of which the lower layer metal of the photoresist is aluminum molybdenum, but not simultaneously applied to metal film layer processes of aluminum molybdenum, molybdenum aluminum molybdenum, copper titanium and the like, has a small application range, and can cause corrosion of metal layers except the aluminum molybdenum metal film layer process to different degrees. In addition, sulfones are used in the stripping solution, and the sulfoxides are used as polar solvents, so that sulfur element can be introduced into the stripping solution, the stripping solution has pungent smell and is harmful to human bodies and the environment, and the treatment cost of the waste stripping solution is also increased.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provide a water-based photoresist stripping solution which can effectively remove photoresist residues, can be used for processes of different metal film layers, does not corrode metal wiring at the lower layer, has long service life and is harmless to human bodies and the environment.
The technical scheme adopted by the invention for solving the technical problems is as follows:
an aqueous photoresist stripping solution comprises 1-20% of alkoxy alkylamine, 5-50% of protic solvent, 30-80% of aprotic solvent, 10-30% of water, 0.01-1% of additive and 0.005-0.1% of long-carbon-chain fatty alcohol. Wherein the additive is phenolic compound, azole compound and its derivatives.
In the invention, the alkoxy alkylamine is one or a mixture of more than two of methoxyethylamine, methoxypropylamine, methoxybutylamine, ethoxyethylamine, ethoxypropylamine, ethoxybutylamine, (methoxymethyl) dimethylamine and (methoxymethyl) diethylamine. The alkoxy alkylamine can effectively penetrate into the deteriorated or crosslinked photoresist matrix to destroy the bonding of molecules to form hollow bodies, so that the photoresist is transformed into amorphous polymer gel blocks, and the photoresist stripping capability is strong. The alkoxy alkylamine has moderate alkalinity, does not corrode metal wiring on the lower layer, has relatively low ammonia nitrogen content, and is easy to discharge and treat waste liquid. The content of the alkoxy alkylamine is 1-20%, if the content of the alkoxy alkylamine is less than 1%, the permeability of the photoresist is weakened, and the stripping capability of the stripping solution is reduced; if the content is more than 20%, the corrosion rate of the underlying metal wiring is drastically increased, and metal corrosion occurs.
In the present invention, the protic solvent is one or a mixture of two or more selected from the group consisting of ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol butyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether. The protic solvent has an action of dissolving the gel-like photoresist, and at the same time, makes the stripping liquid easily removed by washing with water at the time of washing after stripping, thereby reducing the adhesion of the stripping liquid and the deposition of the dissolved photoresist. The content of the protic solvent is 5-50%, and if the content of the protic solvent is less than 5%, the cleaning ability of the stripping solution is reduced, so that the substrate may be difficult to clean by water; if the content is more than 50%, the stripping ability of the stripping solution is lowered, and the photoresist remains.
In the invention, the aprotic solvent is one or a mixture of more than two of N-methylpyrrolidone, N-ethylpyrrolidone, formamide, acetamide, N-methylformamide, N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylpropionamide, 1, 3-dimethylimidazolidinone, gamma-butyrolactone, tetrahydrofuran and tetrahydrofurfuryl alcohol. The aprotic solvent decomposes and dissolves the photoresist polymer gel block peeled off by the alkoxyalkylamine, and dissolves the phenol resin which is the main component of the photoresist. The content of the aprotic solvent is 30-80%, and if the content of the aprotic solvent is less than 30%, the stripping performance of the photoresist is reduced, the solubility of the photoresist is reduced, and the number of substrates treated by the stripping solution is reduced; if the content is more than 80%, the cleaning ability of the stripping solution is lowered.
In the invention, the additive is phenolic compounds and azole compounds and derivatives thereof, and is one or a mixture of more than two of phenol, catechol, resorcinol, hydroquinone, p-cresol, methyl catechol, ethyl catechol, p-aminophenol, p-nitrophenol, imidazole, methyl benzotriazole, carboxyl benzotriazole, 1-hydroxy benzotriazole, nitro benzotriazole, amino triazole, phenyl tetrazole and water-soluble glucan. The selected additive can effectively inhibit the corrosion of alkaline substances in the stripping liquid to lower-layer metal wiring in different metal film layer processes, is environment-friendly and harmless, does not pollute a substrate, and particularly can obviously improve the uniformity of the stripping liquid by using water-soluble glucan. The content of the additive is 0.01-1%, and if the content of the additive is less than 0.01%, the lower metal wiring can be corroded in the stripping and water washing processes; if the content is more than 1%, the additive may be adsorbed on the surface of the metal wiring, causing contamination.
In the invention, the long-carbon-chain fatty alcohol is one or a mixture of more than two of tetradecanol, hexadecanol and octadecanol. The selected long-carbon-chain fatty alcohol can inhibit the volatilization of water in the use process of the water-based stripping liquid, and is environment-friendly and harmless. In addition, the long-carbon-chain fatty alcohol-containing stripping solution and water-soluble glucan have a synergistic effect, so that the uniformity of the stripping solution can be effectively improved, the content of the long-carbon-chain fatty alcohol is 0.005-0.1%, and if the content of the long-carbon-chain fatty alcohol is less than 0.005%, the water volatilization amount is large in the use process of the water-based stripping solution; if the content is more than 0.1%, the solubility of the long-carbon-chain fatty alcohol may be deteriorated, and precipitation may occur.
In the present invention, the resistivity for water separation is higher than 18M Ω cm. Water can increase the activity of the alkoxyalkylamine, increasing the rate of stripping the photoresist. When the substrate is cleaned after stripping, the residual photoresist and pollutants on the substrate can be quickly and effectively removed. The content of water is 10-30%, and if the content of water is less than 10%, the stripping time of the stripping liquid can be prolonged, and the stripping capability is reduced; if the content is more than 30%, the dissolving ability of the stripping solution may be lowered, the number of substrates treated with the stripping solution may be reduced, and corrosion of metal wiring may be caused.
The preparation method of the aqueous photoresist stripping solution is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding alkoxy alkylamine into a mixing kettle according to a proportion;
(2) under the condition of continuously stirring, adding a protic solvent according to a proportion;
(3) adding the aprotic solvent in proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding an additive, long-carbon-chain fatty alcohol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Compared with the prior art, the invention has the beneficial effects that: the aqueous photoresist stripping solution selects alkoxy alkylamine as an alkaline substance, can efficiently permeate and decompose the photoresist, has strong photoresist stripping capability, less stripping time and low energy consumption, does not corrode metal wiring at the lower layer, has low ammonia nitrogen content, and is easy to treat waste liquid. The aqueous photoresist stripping solution adopts phenolic compounds, azole compounds and derivatives thereof as additives, can effectively inhibit the corrosion of the aqueous stripping solution to the metal wiring at the lower layers of different metal film layer processes in the stripping process, improves the compatibility of the aqueous stripping solution, is environment-friendly and harmless, and does not pollute a substrate. The long-carbon-chain fatty alcohol is added into the aqueous photoresist stripping liquid, so that the volatilization amount of water in the use process of the stripping liquid is reduced, the service life of the stripping liquid is prolonged, and the use cost of the stripping liquid is reduced.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The implementation method comprises the following steps: the use method of the water-based photoresist stripping liquid comprises the steps of stripping glass substrates of different metal film layer processes for experiments at 45 ℃ by using the prepared water-based photoresist stripping liquid, soaking for 100s, flushing the glass substrates by using high-purity water after stripping is finished, and drying by using high-purity nitrogen. Observing the residual condition of the stripped photoresist and the metal corrosion condition by a microscope; heating for a period of time (1h and 6h) at constant temperature, observing the water volatilization condition by a weighing method, and expressing the water volatilization condition by the water volatilization rate.
The glass substrates for the different metal film processes are shown in table 1, the aqueous photoresist stripper composition, and the glass substrates used therewith are shown in table 2, the stripping capability criteria are shown in table 3, and the corrosion inhibition capability criteria are shown in table 4.
The results of stripping are shown in Table 5, in which the aqueous photoresist stripping solutions of examples and comparative examples show the residual state of the photoresist, the corrosion of the metal, and the volatilization of water.
TABLE 1 glass substrate of different metal film layer process
Glass substrate Different metal film layer process
G1 Aluminum-molybdenum double-layer structure
G2 Molybdenum-aluminum-molybdenum three-layer structure
G3 Copper-molybdenum double-layer structure
G4 Copper-titanium double-layer structure
TABLE 2 aqueous Photoresist stripper composition, and glass substrate used therein
Figure BDA0001339602850000051
MOEA: methoxy ethylamine
MOPA: methoxypropylamines
EOPA: ethoxy propylamines
MDG: diethylene glycol methyl ether
EDG (electro-deposition) of: diethylene glycol Ether
BDG: diethylene glycol butyl ether
NMF: n-methylformamide
DMF: n, N-dimethylformamide
DMAC: n, N-dimethyl acetamide
NMP: n-methyl pyrrolidone
THFA: tetrahydrofurfuryl alcohol
MC: methylphthalatechol
ATA: amino triazole
PT: phenyl tetrazole
S: water-soluble glucan
TABLE 3 Peel Capacity criteria
Rating of evaluation Residual condition of photoresist
A The photoresist has no residue and excellent stripping ability
B Small amount of residual photoresist, and moderate stripping ability
C The photoresist was left in a large amount and the stripping ability was poor
TABLE 4 Corrosion inhibition Capacity Standard
Rating of evaluation Corrosion of metal wiring
A No corrosion of metal wiring
B Local corrosion of metal wiring
C The metal wiring is indented and chamfered
TABLE 5 residual photoresist, metal corrosion and moisture volatilization
Figure BDA0001339602850000061
Figure BDA0001339602850000071
Example 1:
an aqueous photoresist stripping solution comprises, by weight, 2% of methoxyethylamine, 8% of diethylene glycol ethyl ether, 80% of tetrahydrofurfuryl alcohol, 0.05% of phenyltetrazole, 0.05% of hexadecanol and 10% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding methoxy ethylamine into the mixing kettle according to the proportion;
(2) adding diethylene glycol ethyl ether in proportion under the condition of continuously stirring;
(3) adding tetrahydrofurfuryl alcohol in proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding phenyl tetrazole, cetyl alcohol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Example 2:
an aqueous photoresist stripping solution comprises, by weight, 15% of methoxypropylamine, 5% of diethylene glycol ethyl ether, 65% of N, N-dimethylacetamide, 0.08% of aminotriazole, 0.02% of hexadecanol and 15% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding methoxypropylamine into a mixing kettle according to a proportion;
(2) adding diethylene glycol ethyl ether in proportion under the condition of continuously stirring;
(3) adding N, N-dimethylacetamide in a certain proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding amino triazole, cetyl alcohol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Example 3:
an aqueous photoresist stripping liquid comprises, by weight, 3% of methoxypropylamine, 45% of diethylene glycol monobutyl ether, 40% of N-methylformamide, 0.01% of methyl catechol, 0.08% of hexadecanol and 12% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding methoxypropylamine into a mixing kettle according to a proportion;
(2) under the condition of continuously stirring, adding diethylene glycol monobutyl ether according to a proportion;
(3) adding N-methylformamide in proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding methyl catechol, hexadecanol and water in proportion, and circulating for more than 3 h;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Example 4:
an aqueous photoresist stripping solution comprises, by weight, 10% of methoxypropylamine, 12% of diethylene glycol monomethyl ether, 48% of N, N-dimethylformamide, 0.25% of aminotriazole, 0.1% of hexadecanol and 30% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding methoxypropylamine into a mixing kettle according to a proportion;
(2) under the condition of continuously stirring, adding diethylene glycol monomethyl ether in proportion;
(3) adding N, N-dimethylformamide according to a proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding amino triazole, cetyl alcohol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Example 5:
an aqueous photoresist stripping liquid comprises, by weight, 1% of ethoxypropylamine, 35% of diethylene glycol monobutyl ether, 45% of N-methylpyrrolidone, 0.02% of methyl catechol, 0.06% of octadecanol and 19% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding ethoxy propylamine into a mixing kettle according to a proportion;
(2) under the condition of continuously stirring, adding diethylene glycol monobutyl ether according to a proportion;
(3) adding N-methyl pyrrolidone in proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding methyl catechol, octadecanol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Example 6:
an aqueous photoresist stripping solution comprises, by weight, 20% of ethoxypropylamine, 25% of diethylene glycol monomethyl ether, 30% of tetrahydrofurfuryl alcohol, 0.3% of phenyltetrazole, 0.008% of octadecanol and 25% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding ethoxy propylamine into a mixing kettle according to a proportion;
(2) under the condition of continuously stirring, adding diethylene glycol monomethyl ether in proportion;
(3) adding tetrahydrofurfuryl alcohol in proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding phenyl tetrazole, octadecanol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Example 7:
an aqueous photoresist stripping solution comprises, by weight, 4% of ethoxypropylamine, 50% of diethylene glycol ethyl ether, 35% of N-methylpyrrolidone, 0.5% of methyl catechol, 0.5% of water-soluble glucan, 0.005% of octadecanol and 10% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding ethoxy propylamine into a mixing kettle according to a proportion;
(2) adding diethylene glycol ethyl ether in proportion under the condition of continuously stirring;
(3) adding N-methyl pyrrolidone in proportion under the condition of continuously stirring;
(4) under the condition of continuously stirring, adding methyl catechol, water-soluble glucan, octadecanol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Comparative example 1:
an aqueous photoresist stripping liquid comprises, by weight, 25% of diethylene glycol monobutyl ether, 55% of tetrahydrofurfuryl alcohol, 0.05% of aminotriazole, 0.03% of octadecanol and 20% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding diethylene glycol monobutyl ether into a mixing kettle according to a proportion;
(2) adding tetrahydrofurfuryl alcohol in proportion under the condition of continuously stirring;
(3) under the condition of continuous stirring, adding amino triazole and octadecanol in proportion;
(4) adding water in proportion under the condition of continuously stirring, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Comparative example 2:
an aqueous photoresist stripping liquid comprises, by weight, 10% of methoxyethylamine, 60% of N-methylpyrrolidone, 0.1% of phenyltetrazole, 0.02% of hexadecanol and 30% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding methoxy ethylamine into the mixing kettle according to the proportion;
(2) adding N-methyl pyrrolidone in proportion under the condition of continuously stirring;
(3) adding phenyl tetrazole and hexadecanol in proportion under the condition of continuously stirring;
(4) adding water in proportion under the condition of continuously stirring, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Comparative example 3:
an aqueous photoresist stripping liquid comprises, by weight, 20% of ethoxypropylamine, 50% of diethylene glycol ethyl ether, 0.02% of phenyltetrazole, 0.06% of hexadecanol and 30% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding ethoxy propylamine into a mixing kettle according to a proportion;
(2) adding diethylene glycol ethyl ether in proportion under the condition of continuously stirring;
(3) adding phenyl tetrazole and hexadecanol in proportion under the condition of continuously stirring;
(4) adding water in proportion under the condition of continuously stirring, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Comparative example 4:
an aqueous photoresist stripping solution comprises, by weight, 5% of ethoxypropylamine, 25% of diethylene glycol ethyl ether, 50% of tetrahydrofurfuryl alcohol, 0.01% of cetyl alcohol and 20% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding ethoxy propylamine into a mixing kettle according to a proportion;
(2) adding diethylene glycol ethyl ether in proportion under the condition of continuously stirring;
(3) adding tetrahydrofurfuryl alcohol in proportion under the condition of continuously stirring;
(4) adding hexadecanol and water in proportion under the condition of continuously stirring, and circulating for more than 3 h;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Comparative example 5:
an aqueous photoresist stripping liquid comprises, by weight, 12% of ethoxypropylamine, 20% of diethylene glycol monobutyl ether, 28% of N, N-dimethylacetamide, 0.05% of aminotriazole, 0.008% of octadecanol and 40% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding ethoxy propylamine into a mixing kettle according to a proportion;
(2) under the condition of continuously stirring, adding diethylene glycol monobutyl ether according to a proportion;
(3) adding N, N-dimethylacetamide in a certain proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding amino triazole, octadecanol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
Comparative example 6:
an aqueous photoresist stripping solution comprises, by weight, 8% of ethoxypropylamine, 22% of diethylene glycol monomethyl ether, 40% of tetrahydrofurfuryl alcohol, 0.75% of methyl catechol and 30% of water.
The invention relates to a preparation method of an aqueous photoresist stripping solution, which is characterized by comprising the following steps: the preparation method comprises the following steps:
(1) adding ethoxy propylamine into a mixing kettle according to a proportion;
(2) under the condition of continuously stirring, adding diethylene glycol monomethyl ether in proportion;
(3) adding tetrahydrofurfuryl alcohol in proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding methyl catechol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.

Claims (4)

1. The water-based photoresist stripping liquid is characterized by comprising the following components in percentage by weight: 1-20% of alkoxy alkylamine, 5-50% of protic solvent, 30-80% of aprotic solvent, 10-30% of water, 0.01-1% of additive and 0.005-0.1% of long-carbon-chain fatty alcohol;
the alkoxy alkylamine is one or a mixture of more than two of methoxyethylamine, methoxypropylamine, methoxybutylamine, ethoxyethylamine, ethoxypropylamine, ethoxybutylamine, (methoxymethyl) dimethylamine and (methoxymethyl) diethylamine;
the long-carbon-chain fatty alcohol is one or a mixture of more than two of tetradecanol, hexadecanol and octadecanol;
the additive is a mixture of methyl catechol and water-soluble glucan.
2. The aqueous photoresist stripping solution according to claim 1, characterized in that: the protonic solvent is one or a mixture of more than two of ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol butyl ether, diethylene glycol dimethyl ether and diethylene glycol diethyl ether.
3. The aqueous photoresist stripping solution according to claim 1, characterized in that: the aprotic solvent is one or a mixture of more than two of N-methyl pyrrolidone, N-ethyl pyrrolidone, formamide, acetamide, N-methyl formamide, N, N-dimethyl acetamide, N, N-dimethyl propionamide, 1, 3-dimethyl imidazolidinone, gamma-butyrolactone, tetrahydrofuran and tetrahydrofurfuryl alcohol.
4. A method for producing the aqueous photoresist stripping solution according to any one of claims 1 to 3, characterized in that:
the preparation method comprises the following steps:
(1) adding alkoxy alkylamine into a mixing kettle according to a proportion;
(2) under the condition of continuously stirring, adding a protic solvent according to a proportion;
(3) adding the aprotic solvent in proportion under the condition of continuously stirring;
(4) under the condition of continuous stirring, adding an additive, long-carbon-chain fatty alcohol and water in proportion, and circulating for more than 3 hours;
(5) and filtering the mixed liquid by using a filter to obtain the water-based photoresist stripping liquid.
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CN107885049A (en) * 2017-11-24 2018-04-06 无锡南理工新能源电动车科技发展有限公司 A kind of preparation method of copper film stripper in liquid crystal display
CN109254507A (en) * 2018-10-19 2019-01-22 苏州恒康新材料有限公司 Photoresist release agent and photoresist stripping means
EP4022395A4 (en) * 2019-08-30 2023-05-31 Dow Global Technologies LLC Photoresist stripping composition
CN112764330B (en) * 2021-01-08 2022-08-02 绵阳艾萨斯电子材料有限公司 PFA photoresist regeneration stripping liquid and preparation method and application thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030037177A (en) * 2001-11-02 2003-05-12 주식회사 아담스테크놀로지 Stripping aqueous solution for Photoresist
CN1444103A (en) * 2002-03-12 2003-09-24 三菱瓦斯化学株式会社 Optical photoresist stripping composition and cleaning composition
KR20150075519A (en) * 2013-12-26 2015-07-06 동우 화인켐 주식회사 Photoresist stripper composition
JP2017027047A (en) * 2015-07-17 2017-02-02 ヨンチャン ケミカル カンパニー リミテッドYoung Chang Chemical Co.,Ltd Cleaning liquid composition for photo-lithography and forming method of photoresist pattern using the same
CN106873319A (en) * 2015-12-14 2017-06-20 三星显示有限公司 Photoresist remover composition

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9329486B2 (en) * 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030037177A (en) * 2001-11-02 2003-05-12 주식회사 아담스테크놀로지 Stripping aqueous solution for Photoresist
CN1444103A (en) * 2002-03-12 2003-09-24 三菱瓦斯化学株式会社 Optical photoresist stripping composition and cleaning composition
KR20150075519A (en) * 2013-12-26 2015-07-06 동우 화인켐 주식회사 Photoresist stripper composition
JP2017027047A (en) * 2015-07-17 2017-02-02 ヨンチャン ケミカル カンパニー リミテッドYoung Chang Chemical Co.,Ltd Cleaning liquid composition for photo-lithography and forming method of photoresist pattern using the same
CN106873319A (en) * 2015-12-14 2017-06-20 三星显示有限公司 Photoresist remover composition

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