CN107342116A - A kind of aluminium paste used for solar batteries and its application - Google Patents
A kind of aluminium paste used for solar batteries and its application Download PDFInfo
- Publication number
- CN107342116A CN107342116A CN201710780880.2A CN201710780880A CN107342116A CN 107342116 A CN107342116 A CN 107342116A CN 201710780880 A CN201710780880 A CN 201710780880A CN 107342116 A CN107342116 A CN 107342116A
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- China
- Prior art keywords
- aluminium
- boron
- gallium
- aluminium paste
- solar batteries
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004411 aluminium Substances 0.000 title claims abstract description 61
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 61
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 61
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052796 boron Inorganic materials 0.000 claims abstract description 33
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000000843 powder Substances 0.000 claims abstract description 19
- 239000000654 additive Substances 0.000 claims abstract description 18
- 230000000996 additive effect Effects 0.000 claims abstract description 17
- 239000004094 surface-active agent Substances 0.000 claims abstract description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 23
- 238000005245 sintering Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000004913 activation Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of aluminium paste used for solar batteries, it is characterised in that by weight percentage including following components:Aluminium powder 45 75%;Unorganic glass powder 1 3%;Organic carrier 21 25%;Additive 1.5 25%;Surfactant 0.5 2%;The additive is the electroactive boron or gallium being entrained in silicon, and the doping concentration of boron or gallium is 1019‑1021atoms/cm3.The silicon functions as carrier to carry the boron of activation or gallium.The boron or gallium back surface field of high concentration can be formed in back surface field area after aluminium paste sintering used for solar batteries of the present invention, greatly improve the conversion efficiency of solar cell.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of aluminium paste used for solar batteries and its application.
Background technology
Crystal silicon solar batteries clean reliable regenerative resource as a kind of, are increasingly paid attention to by various countries, are state
The focus of border research, lifts the photoelectric transformation efficiency of crystal silicon solar batteries, is to promote photovoltaic generation to come into having for huge numbers of families
Try hard to keep barrier.Aluminium paste has longer history, at present the aluminium paste of the overwhelming majority as a kind of metal paste in the application of crystal silicon battery
Good back surface field effect is all pursued after sintering, and solid solubility of the aluminium in silicon is relatively low, it is difficult to play preferable back surface field effect.
Solid solubility of the boron in silicon is higher than aluminium an order of magnitude, therefore is used for doing additive by numerous aluminium paste enterprises, to
The higher back surface field of doping concentration is obtained after aluminium paste sintering, but no matter uses pure boron or compound boron additive, is failed
Play expected effect.
The content of the invention
, can be in back surface field area after aluminium paste sintering it is an object of the invention to provide a kind of aluminium paste used for solar batteries and its application
Domain forms high concentration and uniform boron or gallium back surface field, greatly improves the conversion efficiency of solar cell.
For achieving the above object, present invention employs following technical scheme:
A kind of aluminium paste used for solar batteries, it is characterised in that by weight percentage including following components:
The additive is the silica flour for electroactive boron or gallium active boron containing high concentration electric or the gallium being entrained in silicon, boron or
Doping concentration of the gallium in silicon is 1019-1021atoms/cm3.The silicon function as carrier carry the boron of activation or
Gallium.
Further, the one of the boron or gallium is first entrained in silicon, then doped silicon again with magnesium or the one high temperature of aluminium
Alloyed powder is made in melting, and the alloyed powder is used to substitute the aluminium powder.
After alloyed powder is made, alloyed powder easily forms stable homogeneous as the component in aluminium paste during high temperature Fast Sintering
Conductive phase, obtain relatively low resistance.
The alloyed powder forms silicon doping by will first be mixed under boron or gallium high temperature in silicon, doped silicon melts with magnesium or aluminium again
Melt and alloyed powder is made, not doped silicon mixes with magnesium or the simple and mechanical of aluminium.
Further, the boron or gallium are electrically activated with silicon in vacuum or protective gas by high-temperature fusion, temperature
Spend for 1420 DEG C -1550 DEG C.
Further, the additive is the globular powder that particle diameter is 0.5~15um.
The particle diameter of the additive be advantageous within this range additive with aluminium paste other compositions it is tightly packed, simultaneously
It will not cause to print network blocking version again.
Further, the surfactant is Disper655.
Further, the purity of the silicon is 5N.
Further, the organic carrier includes one in terpinol, butyl carbitol acetate, diethylene glycol monobutyl ether
Kind or it is several, it is EC150 (3%-5%) that ethyl cellulose is added after well mixed, rilanit special (0.5-2%), stearic acid
(0.5-2%), it is dissolved under 80 DEG C of temperature conditionss integral.The effect of the organic carrier is to ensure that aluminium paste has good print
Brush performance.
It is a further object of the present invention to provide a kind of solar cell, it is characterised in that aluminium paste prepares gained from the above mentioned
Operation principle of the present invention is as follows:
Electroactive boron or gallium additive in aluminium paste of the present invention, boron or gallium therein before being acted on aluminium, first and
Silicon forms electroactive displacement doping.In temperature-fall period is sintered, the electroactive boron or gallium separate out with carrier silicon, in silicon chip
Solid liquid interface epitaxial growth, the boron or gallium back surface field of formation can effectively reduce that back surface is compound, can greatly improve opening for battery
Pressure, its electroactive boron or gallium concentration of the silicon carrier of the activation boron containing high concentration can reach 1019~1021atoms/cm2, can be made with this
Obtain a series of additives containing active boron or gallium.Contain high concentration electric active boron in this additive, its group as aluminium paste
Point, the boron or gallium back surface field of high concentration can be formed in back surface field area after sintering, greatly improve the conversion efficiency of solar cell.
Invention advantage:
The boron or gallium back surface field of high concentration can be formed in back surface field area after aluminium paste sintering used for solar batteries of the present invention, made
The conversion efficiency of solar cell greatly improves.
Embodiment
Technical scheme is further described below in conjunction with preferred embodiment,
Embodiment 1~3 and comparative example 1:
A aluminium pastes are comparative example 1, are conventional aluminium paste;
B aluminium pastes are embodiment 1~3, and part aluminium powder is substituted using containing electroactive boron or gallium additive for the present invention,
Other components are fully equivalent to A aluminium pastes.
Concrete component see the table below:
A aluminium pastes and B aluminium pastes are respectively used to carry on the back passivation cell, corresponding electrical property is as follows:
Group | Voc | Isc | FF | Rs | Ncell |
A aluminium pastes-comparative example 1 | 0.6518 | 9.694 | 78.24 | 0.0031 | 20.23 |
B aluminium pastes-embodiment 1 | 0.6556 | 9.698 | 78.03 | 0.0031 | 20.31 |
B aluminium pastes-embodiment 2 | 0.6607 | 9.707 | 77.75 | 0.0032 | 20.41 |
B aluminium pastes-embodiment 3 | 0.6613 | 9.683 | 77.21 | 0.0037 | 20.24 |
As a result show:In the case where other conditions are constant, using the aluminium paste of the present invention, the open circuit of battery is substantially increased
Voltage (up to 9mv), and short circuit current is also slightly lifted, and is also obviously improved on final electrical property.And open-circuit voltage is big
Caused by width lifting is due to electroactive boron or gallium in additive.
Embodiment 4 and comparative example 2
C aluminium pastes are comparative example 2, a aluminium paste used on a large scale for current domestic main flow battery producer PERC producing lines;
D aluminium pastes are that embodiment 4 is using electroactive boron or gallium additive, first and after aluminium progress alloying are fabricated to alloy
Powder, aluminium powder is substituted using the alloyed powder:
C aluminium pastes and D aluminium pastes are respectively used to carry on the back passivation cell, corresponding electrical property is as follows:
Group | Voc | Isc | FF | Rs | Ncell |
C aluminium pastes | 0.6569 | 9.681 | 78.57 | 0.0027 | 20.45 |
D aluminium pastes | 0.6636 | 9.721 | 78.36 | 0.003 | 20.69 |
As a result show:Using the D money aluminium pastes containing electroactive boron or gallium alloy powder, and domestic main flow PERC producers use at present
The contrast of import C money PERC aluminium pastes, its open-circuit voltage has an about 6-7mv lifting, and short circuit current is slightly lifted, overall opto-electronic conversion
Efficiency is higher by 0.24%, is a considerable numerical value.
The content of protection of the invention is not limited solely to activate the additive of boron and gallium, all to adulterate original by bearer activation of silicon
Son, aluminium paste or silver paste additive based on such principle, within protection scope of the present invention.
It is pointed out that as described above is only to explain the preferred embodiments of the invention, it is right according to this to be not intended to
The present invention makees any formal limitation, therefore all have any modification for making the relevant present invention under identical spirit
Or change, it should all be included in that the invention is intended to the category protected.
Claims (8)
1. a kind of aluminium paste used for solar batteries, it is characterised in that by weight percentage including following components:
The additive is the electroactive boron or gallium being entrained in silicon, and the doping concentration of boron or gallium in silicon is 1019-
1021atoms/cm3。
2. aluminium paste used for solar batteries according to claim 1, it is characterised in that the one of the boron or gallium is first entrained in
In silicon, then alloyed powder is made in doped silicon with the one high-temperature fusion of magnesium or aluminium again, and the alloyed powder is used to substitute the aluminium powder.
3. aluminium paste used for solar batteries according to claim 1, it is characterised in that boron or the gallium vacuum or protection gas
Electrically activated in body by high-temperature fusion, temperature is 1420 DEG C -1550 DEG C.
4. aluminium paste used for solar batteries according to claim 1, it is characterised in that the additive be particle diameter be 0.5~
15um globular powder.
5. aluminium paste used for solar batteries according to claim 1, it is characterised in that the surfactant is
Disper655。
6. aluminium paste used for solar batteries according to claim 1, it is characterised in that the purity of the silicon is 5N.
7. aluminium paste used for solar batteries according to claim 1, it is characterised in that the organic carrier include terpinol,
One or more in butyl carbitol acetate, diethylene glycol monobutyl ether.
8. a kind of solar cell, it is characterised in that gained is prepared as the aluminium paste described in any one of claim 1~7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710780880.2A CN107342116A (en) | 2017-09-01 | 2017-09-01 | A kind of aluminium paste used for solar batteries and its application |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710780880.2A CN107342116A (en) | 2017-09-01 | 2017-09-01 | A kind of aluminium paste used for solar batteries and its application |
Publications (1)
Publication Number | Publication Date |
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CN107342116A true CN107342116A (en) | 2017-11-10 |
Family
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CN201710780880.2A Pending CN107342116A (en) | 2017-09-01 | 2017-09-01 | A kind of aluminium paste used for solar batteries and its application |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112786232A (en) * | 2019-11-11 | 2021-05-11 | 江西佳银科技有限公司 | N-type solar cell silver paste doped with organic gallium and preparation method thereof |
CN112786233A (en) * | 2019-11-11 | 2021-05-11 | 江西佳银科技有限公司 | High-activity low-series-resistance N-type solar cell silver paste and preparation method thereof |
CN112825276A (en) * | 2019-11-21 | 2021-05-21 | 江西佳银科技有限公司 | High-performance solar front conductive silver paste and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543253A (en) * | 2012-02-17 | 2012-07-04 | 杜国平 | Aluminum-silicon-boron paste and preparation method for same |
CN103531265A (en) * | 2013-10-18 | 2014-01-22 | 南通天盛光伏科技有限公司 | Back field local contact aluminum slurry of crystalline silicon solar cell and preparation method of back field local contact aluminum slurry |
CN106448806A (en) * | 2016-10-26 | 2017-02-22 | 盐城工学院 | Conductive paste for PERC solar cell, preparation method and application thereof |
-
2017
- 2017-09-01 CN CN201710780880.2A patent/CN107342116A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543253A (en) * | 2012-02-17 | 2012-07-04 | 杜国平 | Aluminum-silicon-boron paste and preparation method for same |
CN103531265A (en) * | 2013-10-18 | 2014-01-22 | 南通天盛光伏科技有限公司 | Back field local contact aluminum slurry of crystalline silicon solar cell and preparation method of back field local contact aluminum slurry |
CN106448806A (en) * | 2016-10-26 | 2017-02-22 | 盐城工学院 | Conductive paste for PERC solar cell, preparation method and application thereof |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112786232A (en) * | 2019-11-11 | 2021-05-11 | 江西佳银科技有限公司 | N-type solar cell silver paste doped with organic gallium and preparation method thereof |
CN112786233A (en) * | 2019-11-11 | 2021-05-11 | 江西佳银科技有限公司 | High-activity low-series-resistance N-type solar cell silver paste and preparation method thereof |
CN112825276A (en) * | 2019-11-21 | 2021-05-21 | 江西佳银科技有限公司 | High-performance solar front conductive silver paste and preparation method thereof |
CN112825276B (en) * | 2019-11-21 | 2022-12-23 | 江西佳银科技有限公司 | High-performance solar front conductive silver paste and preparation method thereof |
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Application publication date: 20171110 |