KR20170119300A - Rear electrode paste composition for solar cell - Google Patents
Rear electrode paste composition for solar cell Download PDFInfo
- Publication number
- KR20170119300A KR20170119300A KR1020170049484A KR20170049484A KR20170119300A KR 20170119300 A KR20170119300 A KR 20170119300A KR 1020170049484 A KR1020170049484 A KR 1020170049484A KR 20170049484 A KR20170049484 A KR 20170049484A KR 20170119300 A KR20170119300 A KR 20170119300A
- Authority
- KR
- South Korea
- Prior art keywords
- solar cell
- glass frit
- weight
- present
- electrode
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 239000002003 electrode paste Substances 0.000 title description 6
- 239000011521 glass Substances 0.000 claims description 61
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052782 aluminium Inorganic materials 0.000 claims description 32
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 20
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 15
- -1 B 2 O 3 Inorganic materials 0.000 claims description 7
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 17
- 238000002161 passivation Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 6
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229940116411 terpineol Drugs 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000012461 cellulose resin Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 101100296544 Caenorhabditis elegans pbo-5 gene Proteins 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- DOVZUKKPYKRVIK-UHFFFAOYSA-N 1-methoxypropan-2-yl propanoate Chemical compound CCC(=O)OC(C)COC DOVZUKKPYKRVIK-UHFFFAOYSA-N 0.000 description 1
- OMVSWZDEEGIJJI-UHFFFAOYSA-N 2,2,4-Trimethyl-1,3-pentadienol diisobutyrate Chemical compound CC(C)C(=O)OC(C(C)C)C(C)(C)COC(=O)C(C)C OMVSWZDEEGIJJI-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- RHFOYRRUVLOOJP-UHFFFAOYSA-N ethoxyethane;propanoic acid Chemical compound CCOCC.CCC(O)=O RHFOYRRUVLOOJP-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000000326 ultraviolet stabilizing agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/38—Paints containing free metal not provided for above in groups C09D5/00 - C09D5/36
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/66—Additives characterised by particle size
- C09D7/68—Particle size between 100-1000 nm
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/66—Additives characterised by particle size
- C09D7/69—Particle size larger than 1000 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to a paste composition for a solar cell back electrode and a solar cell formed using the paste composition.
Description
The present invention relates to a paste composition for a solar cell back electrode and a solar cell formed using the paste composition.
A solar cell generates current and voltage by photovoltaic effect that absorbs light energy generated from the sun and generates electrons and holes. The semiconductor substrate includes a semiconductor substrate and an emitter layer on which a pn junction is formed. A front electrode is formed on the emitter and electrically connected to the emitter. On the other surface opposite to the light incident surface, A rear electrode is formed.
Since the light absorbed by the solar cell has various wavelengths, the refractive index differs according to the wavelength, so there is a wavelength range that absorbs light. Generally, light of a long wavelength has a low refractive index and is not absorbed well and transmits the solar cell. There is also a passivation layer which reflects the transmitted light and allows the solar cell to pass therethrough, thereby increasing absorption of light.
The Passive Emitter and Rear Contact type solar cell has a passivation layer on the backside of the wafer and increases the absorption rate of light incident on the solar cell and the loss due to the recombination of the generated electrons and holes . At this time, the passivation layer generally comprises an aluminum oxide layer (Al 2 O 3 LAYER) and a silicon nitride layer (SiN x LAYER), and the aluminum oxide layer generates a fixed negative charge at the back surface of the solar cell. The negative charge helps to move the holes generated in the solar cell to the rear electrode and reduces the amount of recombination of electrons and holes generated thereby to collect more electrons and holes, (Voc) can be improved and solar cell efficiency can be increased.
In this PERC type solar cell, the aluminum electrode can not penetrate the passivation layer, and forms a local back surface field layer (BSF layer) using an aluminum paste through an opening. At this time, voids are generated due to the difference in the diffusion speed between aluminum (Al) and silicon (Si), which lowers the open-circuit voltage (Voc) and lowers the conversion efficiency. Generally, the void is generated because the diffusion speed of silicon is higher than that of aluminum. Therefore, it is required to develop a technique of changing the component in the paste.
In addition, when the aluminum paste does not react with the passivation layer, fine aluminum particles are generated due to poor adhesion of the aluminum electrode, and the generated particles cause contamination of the front surface, which lowers the conversion efficiency. This is also a problem when a solar cell module is manufactured. In addition, the conventional aluminum paste is poor in stability against moisture.
Therefore, there is a need for research and development of an aluminum paste excellent in water stability while being capable of realizing a certain level of electrode adhesion.
SUMMARY OF THE INVENTION It is an object of the present invention to provide a paste for a back electrode of a solar cell which is superior in moisture stability and can improve electrode adhesion and can realize a high conversion efficiency and an open circuit voltage. .
It is another object of the present invention to provide a solar cell using the paste for the rear electrode.
According to an aspect of the present invention,
(a) an aluminum conductive powder
(b) glass frit containing SiO 2 , ZnO, Bi 2 O 3 and B 2 O 3 and
(c) an organic vehicle
To a paste composition for a solar cell back electrode.
In the paste composition for a solar cell back electrode according to an embodiment of the present invention, the glass frit is SiO 2 5 to 30% by weight, ZnO 1 to 20% by weight, Bi 2 O 3 10 to 60 wt% and B 2 O 3 5 to 20 wt%.
Another aspect of the present invention is
(a) an aluminum conductive powder
(b ') glass frit containing SiO 2 , ZnO, Bi 2 O 3 , B 2 O 3 , PbO and Al 2 O 3 and
(c) an organic vehicle
The present invention provides a paste composition for a solar cell back electrode.
At this time, in the paste composition for a solar cell rear electrode according to the above embodiment, the glass frit is SiO 2 5 to 30% by weight, ZnO 1 to 20% by weight, Bi 2 O 3 10 to 60 wt%, B 2 O 3 5 to 20 wt%, PbO 5 to 50 wt%, and Al 2 O 3 1 to 20 wt%.
In the paste composition for a solar cell rear electrode according to an embodiment of the present invention, the glass frit may have an average particle diameter of 0.5 to 5.0 μm.
The paste composition for a solar cell back electrode according to an embodiment of the present invention may contain 0.6 to 20% by weight of the glass frit with respect to the total weight.
In the paste composition for a solar cell back electrode according to an embodiment of the present invention, the aluminum conductive powder may have an average particle diameter of 2 to 10 mu m.
In the paste composition for a solar cell back electrode according to an embodiment of the present invention, the organic vehicle may be one in which an organic binder containing at least one selected from a cellulose resin, an acrylic resin and a polyvinyl resin is dissolved in a solvent have.
In addition, the present invention provides a solar cell having a conventional type or PERC (passive emitter and rear cell type) structure formed using the above paste composition.
The paste composition for a solar cell back electrode according to the present invention is excellent in stability against moisture and has an advantage that a high conversion efficiency and an open circuit voltage can be realized because the electrode adherence can be improved.
Further, the present invention has an advantage of providing a solar cell which is excellent in stability and reliability and can realize high energy conversion efficiency by using the paste composition.
Hereinafter, the paste composition for a solar cell rear electrode of the present invention and a solar cell manufactured using the same will be described in detail. The present invention may be better understood by the following examples, which are for the purpose of illustration only and are not intended to limit the scope of protection defined by the appended claims. The technical terms and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs, unless otherwise defined.
The present invention is applicable to a solar cell having a conventional type or a PERC type (Passive Emitter and Rear Cell type) structure. Among them, the solar cell exemplified below is PERC type, and the present invention is not necessarily applied to the PERC type solar cell.
The PERC type solar cell has a passivation on the backside to increase the light absorption rate in the long wavelength region and reduce the recombination of electrons and holes to increase the short circuit current Isc and the open voltage Voc, Can be improved. However, due to the existence of passivation, a local BSF layer must be formed. However, when aluminum paste is applied, a void is generated due to a difference in the diffusion speed of aluminum and silicon. In addition, this may reduce the electrode attaching force to reduce the conversion efficiency, and it is also difficult to secure the reliability of the module.
Accordingly, the present inventors have found that by providing a paste composition for a back electrode including a combination of specific components, void generation can be suppressed to maximize the efficiency of the solar cell, and at the same time, the properties of the aluminum paste And thus the present invention has been accomplished.
The paste composition for a solar cell back electrode in the present invention is useful for application to a general solar cell as well as a PERC type solar cell including a passivation layer and is not limited to various operations including a silicon semiconductor device generally known as a solar cell . In addition, the paste composition according to the present invention can effectively form a local BSF layer with excellent reactivity between the silicon and aluminum interface, and can prevent contamination due to the passivation layer.
A first aspect of the paste composition for a solar cell back electrode according to the present invention comprises
(a) an aluminum conductive powder,
(b) glass frit containing SiO 2 , ZnO, Bi 2 O 3 and B 2 O 3 and
(c) an organic vehicle.
The glass frit is a composition that does not contain lead, and each component acts as a major factor in water stability and electrode adhesion force, and these components can realize a synergistic effect in combination with other components in the paste composition.
The glass frit according to the first aspect of the present invention is a matter content, and adjustable in the range to attain the object of the present invention, preferably SiO 2 5 to 30% by weight, ZnO 1 to 20% by weight, Bi 2 O 3 10 to 60 wt% and B 2 O 3 5 to 20 wt%. At this time, the deficient portion of the total weight of the components may further include at least one or more other oxides. Specific examples include P 2 O 5 , Na 2 O, K 2 O, and Sb 2 O 3 And the like. Any one component selected from P 2 O 5 , Na 2 O and K 2 O may be contained in the glass frit in an amount of 0.1 to 3% by weight, preferably 0.5 to 2% by weight. The content of Sb 2 O 3 in the glass frit may be 5 to 20% by weight, preferably 10 to 16% by weight. When the above range is satisfied, excellent water stability and electrode adhesion force can be realized, and in addition, solar cell performance is improved.
The paste composition for a solar cell back electrode according to the first aspect of the present invention described above further comprises PbO and Al 2 O 3 Or a combination thereof. In this case, the solar cell performance may be somewhat deteriorated, but it is preferable in terms of securing water stability and improving the adhesion of the electrode.
Further, the present invention provides a second aspect of the paste composition for a solar cell back electrode according to the present invention, which is capable of achieving moisture stability and electrode adhesion improvement without deteriorating solar cell performance.
The solar cell back electrode paste composition according to the second aspect of the present invention comprises
(a) an aluminum conductive powder,
(b ') glass frit containing SiO 2 , ZnO, Bi 2 O 3 , B 2 O 3 , PbO and Al 2 O 3 and
(c) an organic vehicle.
The glass frit has a composition containing lead and can improve water stability and electrode adhesion according to a combination of components constituting the glass frit and other components in the paste composition and further improve durability by securing quality stability and reliability It is better to be able.
The glass frit according to the second aspect of the present invention is a matter content, and adjustable in the range to attain the object of the present invention, preferably SiO 2 5 to 30% by weight, ZnO 1 to 20% by weight, Bi 2 O 3 10 to 35% by weight, B 2 O 3 5 to 20% by weight, PbO 5 to 50% by weight and Al 2 O 3 1 to 20% by weight. At this time, when the glass frit component satisfies the above range, it is more effective in improving the solar cell performance and durability can be further enhanced by strengthening the adhesion of the electrode.
A second aspect of the paste composition according to the invention of the method is a combination of PbO and Al 2 O 3, PbO, and Al 2 O 3 A combination of PbO and Al 2 O 3 in the glass frit rather than containing only one of the components can ensure solar cell performance superior in conversion efficiency or open-circuit voltage characteristics, It is better to implement.
In this case, PbO, and Al 2 O 3 The component content in each glass frit is adjustable within the range achieving the object of the present invention. Preferably, the PbO content is in the range of 5 to 50 wt% and the Al 2 O 3 content is in the range of 1 to 20 wt% It is better in terms of adhesion or bubble generation resistance performance.
As described above, it is needless to say that the paste composition for solar cell back electrode according to the present invention can realize various aspects according to the combination of components of the glass frit.
In the paste composition for a solar cell back electrode according to the present invention, the glass frit may include SiO 2 , ZnO, Bi 2 O 3 , B 2 O 3 , P 2 O 5 , Na 2 O, K 2 O, and Sb 2 O 3 may be made of, yet a further embodiment, SiO 2, ZnO, Bi 2 O 3, B 2 O 3, PbO, Al 2 O 3, Na 2 O, SrO, K 2 O and Sb 2 O 3 < / RTI >
At this time, the glass frit is preferably SiO 2 5 to 30% by weight, ZnO 1 to 20% by weight, Bi 2 O 3 10 to 60 wt%, B 2 O 3 5 to 20 wt%, PbO 0 to 50 wt%, and Al 2 O 3 0 to 20% by weight. When the above range is satisfied, the viscosity of the paste is appropriately maintained. Particularly, the difference in the diffusion speed between aluminum silicon is significantly reduced, void formation at the interface can be prevented, adhesion with the electrode can be improved, And the open circuit voltage are excellent, and the efficiency of the solar cell can be maximized by combination with other components.
Specifically, the SiO 2 may be contained in an amount of 5 to 30% by weight, more preferably 7 to 21% by weight based on the total weight of the glass frit. Further, ZnO may be contained in an amount of 1 to 20% by weight, more preferably 5 to 16% by weight based on the total weight of the glass frit.
Bi 2 O 3 may be contained in an amount of 10 to 60% by weight, more preferably 12 to 45% by weight based on the total weight of the glass frit. Further, when Bi 2 O 3 is used together with the components of the combination of PbO and Al 2 O 3 in the case of containing lead in the glass frit, it is preferable that the Bi 2 O 3 is contained in an amount of 10 to 35% by weight, preferably 15 to 30% Battery performance is even better. For example, when the Bi 2 O 3 is used together with PbO in the glass frit, the conversion efficiency and open-circuit voltage may be lowered when the content exceeds 35 wt%.
Further, B 2 O 3 may be contained in an amount of 5 to 20% by weight, more preferably 10 to 15% by weight based on the total weight of the glass frit.
The glass frit may further include at least one selected from the group consisting of PbO and Al 2 O 3 , wherein PbO may be contained in an amount of 5 to 50% by weight, more preferably 17 to 43% by weight based on the total weight of the glass frit have. Al 2 O 3 may be contained in an amount of 1 to 20 wt%, more preferably 4 to 8 wt%, based on the total weight of the glass frit.
The components in the glass frit are more advantageous in achieving the desired effect of the present invention when combined with the aluminum conductive powder and the organic vehicle in the paste composition, as well as in combination with other components in the glass frit when the respective content ranges are satisfied Do.
If any one or more of the components in the glass frit is out of the above range, it is difficult to expect a synergistic effect depending on the combination of components, and the solar cell performance may deteriorate, or the electrode adhesion may be weakened, have.
In the present invention, (a) the conductive powder is aluminum as the main metal component. Such aluminum conductive powder may be formed into a single particle or may be used by mixing particles having different characteristics. Or a core-shell structure.
The aluminum conductive powder is preferably spherical in shape, and may be flake, plate, amorphous or a combination thereof depending on required mechanical properties.
The aluminum conductive powder has an average particle diameter of 0.5 to 10 mu m, preferably 1 to 9 mu m. More preferably from 1 to 7 mu m. When the above range is satisfied, the dispersibility and the compactness can be ensured and it is better to optimize the electric performance of the solar cell. It is also preferable to mix conductive powders having different average particle diameters.
The conductive powder may have a BET of 0.2 to 3.0 m 2 / g, preferably 0.4 to 2.0 m 2 / g. When the above range is satisfied, it is preferable to improve the electrical characteristics of the solar cell.
The conductive powder may include a conductive metal other than aluminum and is not limited thereto. For example, an appropriate amount of metal or alloy other than aluminum such as silver, copper, nickel, palladium, platinum, chromium, cobalt, tin, zinc, iron, iridium, rhodium, tungsten, molybdenum or magnesium may be contained.
The aluminum conductive powder may be contained in an amount of 60 to 95% by weight, preferably 65 to 85% by weight based on the total weight of the paste composition. When the above content is satisfied, the occurrence of phase separation can be suppressed, and there is an advantage of being excellent in printing property because of being excellent in viscosity.
In the present invention, the glass frit contains specific components as exemplified in the first, second, third and fourth aspects, and is an organic vehicle and paste, and is applied to a rear surface passivation To improve the adhesion with the electrode, thereby maximizing the efficiency of the solar cell and securing the water stability.
In the present invention, the content of the glass frit in the whole composition for a back electrode paste of the present invention may preferably be 0.1 to 5.0% by weight, more preferably 0.5 to 2.0% by weight. When the content range is satisfied, the reactivity at the interface is good, the adhesion of the electrode is excellent, the contact resistance can be lowered, and the solar cell efficiency can be maximized.
The glass frit may have a glass transition temperature (Tg) of 300 to 600 캜, preferably 300 to 500 캜. The glass frit (b) of the present invention may have a softening point (Ts) of 350 to 750 占 폚, preferably 400 to 650 占 폚. When the glass transition temperature and softening point range are satisfied, the effect of the desired physical properties is better.
It is also preferable that the glass frit has an average particle diameter of 0.5 to 5.0 mu m, preferably 1.0 to 3.0 mu m. When the above range is satisfied, it is possible to prevent the occurrence of a pinhole defect in the electrode formation.
The glass frit is made, for example, by melting components together under atmospheric pressure and then allowing them to have overall glassy properties through a cooling process. Through the melting process, the constituent components of the glass frit are cut off from each other and lose their properties as metal oxides. In the molten state, the components are homogeneously mixed and become vitreous through cooling. At this time, the melting temperature and time are not particularly limited, but preferably the melting temperature is 800 to 1500 ° C and the melting time is 10 minutes to 1 hour.
In the present invention, (c) an organic vehicle imparts viscosity and rheological properties to the composition to improve printability through physical mixing with the inorganic component of the paste for the back electrode.
The organic vehicle may be an organic vehicle ordinarily used for a solar cell electrode paste, for example, a mixture of a polymer and a solvent. Preferably, it is selected from the group consisting of TXIB (Trimethyl Pentanyl Diisobutylate), Dibasic ester, BC (BUTYL CARBITOL), butyl carbitol acetate, butyl carbitol, butyl cellosolve, butyl cellosolve acetate, propylene glycol monomethyl ether, Propyleneglycol monomethyl ether propionate, ethyl ether propionate, terpineol, propylene glycol monomethyl ether acetate, dimethylamino formaldehyde, methyl ethyl (meth) acrylate, Cellulose resins such as ethyl cellulose, methyl cellulose, nitrocellulose, and cellulose esters, cellulose resins such as rosin or alcohol, polymethacrylates such as rosin or alcohol, and mixtures thereof, in one or more solvents selected from the group consisting of ketone, gamma butyrolactone, ethyl lactate and Texanol. , Acrylic acid esters and other acrylic resins, and polyvinyl alcohol , Polyvinyl may be selected by the addition of at least one resin from the polyvinyl-based resin such as butyral. It is more preferable to use a mixed solvent of butyl carbitol acetate, texanol and terthinol.
The organic vehicle is preferably 10 to 40% by weight, and more preferably 15 to 30% by weight based on the total weight of the paste composition. When the above range is satisfied, it is possible to easily disperse the conductive powder and prevent the conversion efficiency of the solar cell from deteriorating due to the increase of the resistance due to the residual carbon after firing.
The solar cell back electrode paste of the present invention may further include conventional additives to improve flow characteristics, process characteristics, and stability in addition to the above-described components. The additives include, but are not limited to, dispersants, thickeners, thixotropic agents, leveling agents, plasticizers, viscosity stabilizers, antifoaming agents, pigments, ultraviolet stabilizers, antioxidants, and coupling agents.
Examples of the dispersing agent include, but are not limited to, SOLSPERSE from LUBRISOL, DISPERBYK-180, 110, 996 and 997 from BYK. Examples of the thickener include but are not limited to BYK-410, 411, and 420 manufactured by BYK. Examples of the shrinkage agent include THIXATROL MAX manufactured by ELEMENTIS, ANTI-TERRA-203 manufactured by BYK, 204, 205, and the like. Examples of the leveling agent include but are not limited to BYK-3932 P, BYK-378, BYK-306 and BYK-3440 manufactured by BYK. The organic additive may be contained in an amount of about 1 to 20% by weight based on 100% by weight of the entire paste composition for the back electrode.
The present invention provides a solar cell having a conventional type or a passive emitter and rear cell type (PERC) structure formed using the above-described paste composition for a rear electrode.
The PERC type solar cell according to an embodiment of the present invention includes a substrate of a first conductivity type; An emitter layer of a second conductivity type formed on the substrate; An antireflection film formed on the emitter layer; A front electrode connected to the emitter layer through the antireflection film, and a rear electrode on the rear surface of the substrate.
The substrate of the first conductivity type is selected from P-type or N-type, and the emitter layer of the second conductivity type is selected to have the opposite conductivity type to the substrate. For the formation of the P + layer, a group III element is doped as an impurity and a group 5 element is doped as an impurity for the formation of an N + layer. For example, B, Ga, In may be doped to form a P + layer, and P, As, and Sb may be doped to form an N + layer. A P-N junction is formed at the interface between the substrate and the emitter layer, which is a portion that receives sunlight to generate a current by the photovoltaic effect. Electrons and holes generated by the photovoltaic effect are attracted to the P layer and the N layer, respectively, and are moved to the electrodes bonded to the lower part of the substrate and the upper part of the emitter layer, and electricity generated here can be used by applying a load to the electrodes.
The anti-reflection film reduces the reflectance of sunlight incident on the front surface of the solar cell. When the reflectance of solar light is reduced, the amount of light reaching the P-N junction is increased, short circuit current of the solar cell is increased, and conversion efficiency of the solar cell is improved. For example, the antireflection film may have any one single film selected from a silicon nitride film, a silicon nitride film including hydrogen, a silicon oxide film, and a silicon oxynitride film, or a multi-film structure formed by combining two or more films.
The front electrode is formed by screen printing using the paste for the front electrode and then heat treatment. The front electrode penetrates the antireflection film and contacts the emitter layer by the punch through phenomenon.
The passivation layer is formed on the rear surface of the substrate and is formed of aluminum oxide (Al 2 O 3 ), and may be formed of silicon oxide (SiO 2 ) or silicon nitride (SiN). The passivation layer may be formed to a thickness of 1 to 50 nm. Which can be deposited by atomic layer deposition (ALD) or plasma enhanced chemical vapor deposition (PECVD).
The rear electrode may be formed by applying a screen printing to the rear surface of the passivation layer. The rear electrode uses the paste composition for a solar cell back electrode according to the present invention. The paste composition is applied and dried, and then baked through a heat treatment process. The back electrode collects holes, which are electric charges moving from the substrate, and outputs the collected holes to an external device.
Hereinafter, the solar cell back electrode paste according to the present invention will be described. However, the present invention is not limited to the following examples.
(Examples 1 to 6 and Comparative Examples 1 to 6)
Components corresponding to the glass frit according to the composition shown in Table 1 were put into a reactor and mixed. The mixture was melted at 1100 ° C for 30 minutes and then quenched by quenching with pure water (H 2 O). The quenched glass melt was pulverized with a ball mill to produce glass frit having an average particle size of 2 mu m.
The prepared glass frit was used to prepare a paste composition for a solar cell according to the present invention.
As the conductive powder, aluminum powder was used. The aluminum powder having an average particle size of 5.0 탆 was used in an amount of 74.0% by weight. The prepared glass frit was used in an amount of 1.0 wt%, and an ethyl cellulose resin (AQUALON ECN-50) was used in an amount of 2.0 wt% as a binder. 10 wt% of butylcarbitol acetate, 5.5 wt% of Texanol and terpineol were used as the solvent, and 1.0 wt% of a thixotropic regulator (ELEMENTIS THIXATROL MAX) and additives 1.0% by weight of oleic acid was added.
(Example 7)
The procedure of Example 1 was repeated except that the content of glass frit was changed to 0.5 wt% and the content of terpineol was changed to 6.0 wt%.
(Example 8)
Example 7 was carried out in the same manner as in Example 7 except that the content of the glass frit was changed to 1.5% by weight and the content of terpineol was changed to 5.0% by weight.
(Example 9)
Example 7 was carried out in the same manner as in Example 7, except that the content of the glass frit was changed to 2.0% by weight and the content of terpineol was changed to 4.5% by weight.
(Example 10)
Example 7 was carried out in the same manner as in Example 7, except that the content of the glass frit was changed to 2.5 wt% and the content of terpineol was changed to 4.0 wt%.
(Manufacture of solar cell)
Phosphorus (P) was doped through a diffusion process using POCl 3 in a tube furnace (850 ° C) using a 156 mm crystalline silicon wafer to form an emitter layer having a sheet resistance of 80 Ω / sq. A silicon nitride film was deposited on the emitter layer by the chemical vapor deposition (PECVD) method using the precursors SiH 4 and NH 3 to form a 70 nm thick anti-reflective film. DPS-1900V7 paste (DAEJOO) was applied on the top surface of the antireflection film and dried. Thereafter, 1.3 g of the paste composition for a rear electrode prepared before the back of the silicon substrate was applied, followed by drying at 250 캜 for 2 minutes. At this time, the application of the front electrode and the rear electrode was performed by screen printing (using ASYS COMPANY printing machine) and in a constant pattern.
For screen printing, a stainless steel wire mesh of 450 mm x 450 mm frame was used. The thickness of the dried film after screen printing was 23 탆, and the drying temperature was 250 캜. The obtained solar cell silicon substrate was simultaneously fired in a belt-type firing furnace under the conditions of a peak temperature of about 780 DEG C and an IN-OUT of about 1 minute to produce a desired solar cell.
The electrical characteristics (I-V characteristics) of the manufactured solar cell were tested using a solar simulator (SOL3A) manufactured by ORIEL. Ten samples per each paste were prepared and the average value of 10 samples was used. The characteristics of the solar cell produced are shown in Table 2.
(evaluation)
(1) Efficiency of solar cell (conversion efficiency, open-circuit voltage)
The conversion efficiency (Eff,%) and the open-circuit voltage (Voc, V) of the solar cell were measured using a solar cell efficiency measuring device (Pasna, CT-801). At this time, the measurement value of each of the conversion efficiency and the open-circuit voltage is set as a reference value with the resultant value according to Comparative Example 1 as 100, and the measured value is converted into the reference value and the relative value is shown.
(2) Electrode adhesion
A tape (Tape, 3M 810-ROK) was cut to about 5 cm on the aluminum electrode surface of the fired solar cell, and the attached tape was quickly removed at an angle of 180 °. In this case, the case where no electrode was observed on the tape at all was evaluated as & cir &, the case where it was faded was rated DELTA (not more than 20%),
(3) Bubble generation time
The fired solar cell was immersed in DI water at 75 ± 5 ° C to check the start time of bubbling on the surface of the aluminum electrode. When bubbles were generated after 15 minutes, the mark was marked as ⊚. If bubbles start rapidly, the stability to moisture is low and the reliability of the solar cell module may be deteriorated.
[Table 1]
[Table 2]
As can be seen from the above Table 1, Examples 1 to 3 according to the present invention are paste compositions comprising lead-free glass frit having a conversion efficiency of up to 102.22% and an open circuit voltage of 100.89% In addition, it was confirmed that the electrode adhesion force as well as the bubble generation time were satisfied. In addition, Examples 4 to 6 according to the present invention confirmed that the paste composition containing glass frit containing PbO and Al 2 O 3 had solar cell efficiency, electrode adhesion, and bubble generation prevention effect. On the other hand, Comparative Examples 1 to 5 had a problem in that the conversion efficiency and the open-circuit voltage were significantly lowered, the electrode adhesion was weakened, and bubbles were generated due to the difference in composition from the glass frit according to the present invention.
In Examples 7 to 9 according to the present invention, the content of the glass frit in the paste was changed and the electrode adhesion and the bubble generation resistance performance as well as the conversion efficiency and the open circuit voltage were good. In Example 10, the content of the glass frit was higher, and the conversion efficiency and the open-circuit voltage performance were somewhat lowered.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Various modifications and variations are possible in light of the above teachings.
Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .
Claims (11)
(b) glass frit containing SiO 2 , ZnO, Bi 2 O 3 and B 2 O 3 and
(c) an organic vehicle
Wherein the composition is a paste for a solar cell back electrode.
Wherein the glass frit (b) comprises 5 to 30% by weight of SiO 2 , 1 to 20% by weight of ZnO, 10 to 60% by weight of Bi 2 O 3 and 5 to 20% by weight of B 2 O 3 Composition.
(b ') glass frit containing SiO 2 , ZnO, Bi 2 O 3 , B 2 O 3 , PbO and Al 2 O 3 and
(c) an organic vehicle
Wherein the composition is a paste for a solar cell back electrode.
Wherein the glass frit comprises 5 to 30 wt% of SiO 2 , 1 to 20 wt% of ZnO, 10 to 60 wt% of Bi 2 O 3 , 5 to 20 wt% of B 2 O 3 , 5 to 50 wt% of PbO, 1 to 20% by weight of Al 2 O 3 .
Wherein the glass frit has an average particle diameter of 0.5 to 5.0 占 퐉.
Wherein the glass frit has an average particle diameter of 0.5 to 5.0 占 퐉.
Wherein the glass frit is contained in an amount of 0.1 to 5.0% by weight based on the total weight of the composition.
Wherein the glass frit is contained in an amount of 0.1 to 5.0% by weight based on the total weight of the composition.
Wherein the aluminum conductive powder has an average particle diameter of 0.5 to 10 占 퐉.
Wherein the aluminum conductive powder has an average particle diameter of 0.5 to 10 占 퐉.
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| KR (1) | KR20170119300A (en) |
| CN (1) | CN109168323A (en) |
| TW (1) | TWI657119B (en) |
| WO (1) | WO2017183881A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102285734B1 (en) * | 2020-11-27 | 2021-08-05 | 주식회사 제이솔루션 | Conductive additive for solar cell module and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114628057A (en) * | 2022-02-11 | 2022-06-14 | 广州市儒兴科技股份有限公司 | Organic carrier and application thereof |
| DE102022122802A1 (en) | 2022-08-19 | 2024-02-22 | Triton Hydrogen Ltd | Sealing can be used as a hydrogen barrier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8076570B2 (en) * | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
| KR20100069950A (en) * | 2008-12-17 | 2010-06-25 | 에스에스씨피 주식회사 | Solar cell's electrode, manufacturing method thereof, and solar cell |
| EP2504844A1 (en) * | 2009-11-25 | 2012-10-03 | E.I. Du Pont De Nemours And Company | Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells |
| CN102314955A (en) * | 2010-06-30 | 2012-01-11 | 比亚迪股份有限公司 | Solar conductive slurry, and preparation method thereof and electrode preparation method |
| KR101786077B1 (en) * | 2010-12-24 | 2017-10-16 | 엘지이노텍 주식회사 | Paste compisition for rear electrode of solar cell, and solar cell including the same |
| KR101447271B1 (en) * | 2011-12-02 | 2014-10-07 | 제일모직주식회사 | Electrode paste composition for solar cell, electrode fabricated using the same and solar cell comprising the same |
| US9082901B2 (en) * | 2012-04-11 | 2015-07-14 | E I Du Pont De Nemours And Company | Solar cell and manufacturing method of the same |
| CN103208321B (en) * | 2013-04-16 | 2015-08-05 | 江苏太阳新材料科技有限公司 | Crystal silicon solar battery back field aluminium paste and preparation method thereof |
| KR102032280B1 (en) * | 2013-04-25 | 2019-10-15 | 엘지전자 주식회사 | Paste composition for forming electrode of solar cell |
| TWI521547B (en) * | 2013-05-10 | 2016-02-11 | 優陽材料科技股份有限公司 | Paste for forming a solar cell back electrode and method for making the same, and method for making a solar cell back electrode |
| JP6018729B2 (en) * | 2013-06-12 | 2016-11-02 | 株式会社ノリタケカンパニーリミテド | Solar cell backside fire-through paste composition and method for manufacturing solar cell |
| US20150099326A1 (en) * | 2013-10-08 | 2015-04-09 | E I Du Pont De Nemours And Company | Solar cell and manufacturing method of the same |
| CN105489710B (en) * | 2016-01-22 | 2018-05-29 | 四川银河星源科技有限公司 | A kind of production technology of all back-contact electrodes solar cell |
-
2017
- 2017-04-18 WO PCT/KR2017/004129 patent/WO2017183881A1/en active Application Filing
- 2017-04-18 TW TW106112917A patent/TWI657119B/en active
- 2017-04-18 CN CN201780024350.3A patent/CN109168323A/en active Pending
- 2017-04-18 KR KR1020170049484A patent/KR20170119300A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102285734B1 (en) * | 2020-11-27 | 2021-08-05 | 주식회사 제이솔루션 | Conductive additive for solar cell module and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI657119B (en) | 2019-04-21 |
| CN109168323A (en) | 2019-01-08 |
| WO2017183881A1 (en) | 2017-10-26 |
| TW201803943A (en) | 2018-02-01 |
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