CN116130141B - Electrode slurry and preparation method and application thereof - Google Patents
Electrode slurry and preparation method and application thereof Download PDFInfo
- Publication number
- CN116130141B CN116130141B CN202211644980.XA CN202211644980A CN116130141B CN 116130141 B CN116130141 B CN 116130141B CN 202211644980 A CN202211644980 A CN 202211644980A CN 116130141 B CN116130141 B CN 116130141B
- Authority
- CN
- China
- Prior art keywords
- powder
- aluminum
- electrode slurry
- glass
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011267 electrode slurry Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000843 powder Substances 0.000 claims abstract description 103
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- 239000011521 glass Substances 0.000 claims abstract description 69
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000002003 electrode paste Substances 0.000 claims abstract description 36
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 36
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000002844 melting Methods 0.000 claims abstract description 29
- 229910000521 B alloy Inorganic materials 0.000 claims abstract description 26
- DJPURDPSZFLWGC-UHFFFAOYSA-N alumanylidyneborane Chemical compound [Al]#B DJPURDPSZFLWGC-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000654 additive Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000000996 additive effect Effects 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims description 34
- 239000002994 raw material Substances 0.000 claims description 27
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 18
- 239000002002 slurry Substances 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 16
- 150000003839 salts Chemical class 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 13
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 12
- 239000013008 thixotropic agent Substances 0.000 claims description 11
- 229910000676 Si alloy Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- -1 alcohol ester Chemical class 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 7
- 239000006259 organic additive Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 6
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 6
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 238000000498 ball milling Methods 0.000 claims description 5
- 239000002270 dispersing agent Substances 0.000 claims description 5
- 238000010791 quenching Methods 0.000 claims description 5
- 230000000171 quenching effect Effects 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000000156 glass melt Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005096 rolling process Methods 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- 239000002562 thickening agent Substances 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims description 4
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 3
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 3
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- 239000004359 castor oil Substances 0.000 claims description 3
- 235000019438 castor oil Nutrition 0.000 claims description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229920000609 methyl cellulose Polymers 0.000 claims description 3
- 239000001923 methylcellulose Substances 0.000 claims description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- 238000004448 titration Methods 0.000 claims description 3
- 239000012752 auxiliary agent Substances 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 26
- 229910052710 silicon Inorganic materials 0.000 abstract description 26
- 239000010703 silicon Substances 0.000 abstract description 26
- 239000000758 substrate Substances 0.000 abstract description 16
- 230000000052 comparative effect Effects 0.000 description 20
- 238000005245 sintering Methods 0.000 description 14
- 238000002161 passivation Methods 0.000 description 13
- 238000007650 screen-printing Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 235000010981 methylcellulose Nutrition 0.000 description 2
- 239000006060 molten glass Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910018626 Al(OH) Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Abstract
The application relates to electrode paste for contact with an undoped p+ surface of a solar cell, and a preparation method and application thereof, wherein the electrode paste comprises the following components in percentage by weight: 30-80% of silver powder, 0.5-40% of aluminum powder, 0.1-20% of aluminum boron alloy powder, 1-10% of low-melting glass powder, 0.1-5% of metal powder for forming metal silicide, 5-20% of organic carrier and 0.1-3% of additive. By the method, the electrode slurry and the undoped p+ type silicon substrate can form ohmic contact.
Description
Technical Field
The application relates to the field of solar cells, in particular to electrode slurry for contact with an undoped p+ surface of a solar cell, and a preparation method and application thereof.
Background
A solar cell, also called a photovoltaic cell, is a semiconductor device that directly converts light of the sun into electrical energy. Because it is a green environment-friendly product, does not cause environmental pollution, and is a renewable resource, the solar cell is an energy source with wide development prospect under the condition of current energy shortage.
In the long-term research and development process, the inventor of the application finds that the conventional TOPCon battery contacts with the p+ emitter electrode slurry, aluminum powder is added into the slurry, and the contact points of silver-aluminum-silicon three phases are formed after sintering to form ohmic contact, but the slurry has the necessary condition that the contacted silicon substrate is heavily doped, when the slurry contacts with an undoped silicon substrate, a large contact potential barrier exists at the contact interface position, so that carriers cannot cross the contact potential barrier, and the slurry only forms the contact points of the silver-aluminum-silicon three phases in a region with few parts, so that a continuous heavily doped layer cannot be formed to reduce the contact potential barrier width to enable the carriers to conduct electricity through tunneling effect, and the slurry contacts with the undoped silicon substrate and cannot form ohmic contact.
In addition, in the prior art, the PERC battery is contacted with the p+ surface to form an aluminum heavily doped layer through aluminum-silicon reaction after sintering, and ohmic contact can be formed with an undoped p-type silicon substrate, but the aluminum paste does not have the capability of burning through a passivation film, a laser perforating process is required to be added in preparing the PERC battery, so that the production cost is increased, the printing width of the current aluminum grid line exceeds 100 micrometers, the grid line width of the front silver paste is about 30 micrometers, and a large amount of light shielding is brought to the printing width of the excessively wide aluminum grid line, so that the battery efficiency is greatly reduced.
Disclosure of Invention
The application aims to provide electrode paste for contact with an undoped p+ surface of a solar cell, a preparation method of the electrode paste and the solar cell, and aims to solve the technical problem that ohmic contact cannot be formed between the conventional electrode paste and an undoped silicon substrate.
In order to achieve the above object, according to one aspect of the present application, there is provided an electrode paste for contact with an undoped p+ surface of a solar cell, comprising the following components in weight percent: 30-80% of silver powder, 0.5-40% of aluminum powder, 0.1-20% of aluminum boron alloy powder, 1-8% of low-melting glass powder, 0.1-5% of metal powder for forming metal silicide, 7-20% of organic carrier and 0.1-3% of additive.
In certain embodiments, the boron content of the aluminum boron alloy powder is 0.1-1 wt.%.
In certain embodiments, the metal powder used to form the metal silicide comprises one or more of Mg, co, ni, pd, pt, ti.
In certain embodiments, the low melting glass frit is prepared from raw materials comprising the following mole percentages: 30-80% PbO,1-15% ZnO,1-15% BaO,1-20% B 2 O 3 、1-10％SiO 2 ，0.5-10％MoO 3 1-15% of third main group oxide, 1-10% of fluxing agent and 1-10% of rare earth oxide, wherein the sum of the mole percentages of the raw materials is 100%.
In certain embodiments, the third main group oxide comprises Al 2 O 3 、Ga 2 O 3 、In 2 O 3 At least one of or for forming Al by heating 2 O 3 、Ga 2 O 3 、In 2 O 3 At least one metal salt of (a) and (b).
In certain embodiments, the fluxing agent comprises at least one of an alkali metal oxide, an alkaline earth metal oxide, a fluorine-containing fluxing agent.
In certain embodiments, the rare earth oxide comprises La 2 O 3 、Y 2 O 3 、CeO 2 、Yb 2 O 3 、Sc 2 O 3 、Eu 2 O 3 At least one of the metal salts or a metal salt for forming at least one of the metal salts by heating.
In certain embodiments, the alkali metal oxide comprises Na 2 O、Li 2 O、K 2 At least one of O or Na is formed by heating 2 O、Li 2 O、K 2 A metal salt of at least one of O.
In certain embodiments, the alkaline earth metal oxide comprises at least one of BeO, caO, srO, mgO or a metal salt for forming at least one of BeO, caO, srO, mgO by heating.
In certain embodiments, the fluorine-containing fluxing agent comprises PbF 2 、AlF 3 、LiF、CaF 2 Or Na (or) 3 AlF 6 At least one of them.
In certain embodiments, the low melting glass frit has a softening point of 250-550 ℃, and the particle size D of the low melting glass frit 50 0.5-3 μm.
In certain embodiments, the organic carrier comprises the following raw materials in weight percent: 50-80% of solvent, 5-30% of organic resin, 1-5% of dispersing agent and 1-10% of thixotropic agent.
In certain embodiments, the solvent comprises at least one of terpineol, alcohol ester twelve, polyethylene glycol, diethylene glycol monobutyl ether acetate, propylene glycol butyl ether.
In certain embodiments, the organic resin comprises at least one of methylcellulose, ethylcellulose, PVB, and acrylic resin.
In certain embodiments, the thixotropic agent comprises at least one of hydrogenated castor oil and a modified polyamide wax.
In certain embodiments, the silver powder is spherical silver powder, particle size D 50 Is 0.1-5 mu m, tap density>5.0g/cm 3 Silver powder particle size span (D 90 -D 10 )/D 50 < 2; and/or the particle diameter D of the aluminum powder 50 1-10 mu m, wherein the activity of the aluminum powder is measured by a redox titration method, and the content of the active aluminum is 98.8-99.8wt%; and/or the grain diameter D of the aluminum-boron alloy 50 Is 0.5-5 μm, particle diameter D 100 Less than 10 μm; and/or the particle diameter D of the metal powder for forming metal silicide 50 Is 0.5-3 μm, particle diameter D 100 ＜10μm。
In certain embodiments, the additive comprises at least one of an organic additive, an inorganic additive.
In certain embodiments, the organic additive comprises at least one of a surfactant, a thixotropic agent, a thickening agent, and a leveling agent.
In certain embodiments, the inorganic additive is at least one of aluminum silicon alloy powder, boron powder.
In certain embodiments, the aluminum-silicon alloy powder comprises Al 88 Si 12 、Al 80 Si 20 Or Al 60 Si 40 At least one of the aluminum-silicon alloy powder with the grain diameter D 50 Is 0.5-3 μm, particle diameter D 100 ＜10μm。
In certain embodiments, the boron powder is an amorphous boron powder having a particle size D 50 Is 0.05-1 μm.
In order to achieve the above object, according to another aspect of the present application, there is provided a method for preparing an electrode slurry as described above, comprising the steps of: 1) Respectively weighing the raw materials for preparing the low-melting-point glass powder, and uniformly mixing the raw materials by using a V-shaped mixer to obtain mixed raw materials; 2) Putting the mixed raw materials into a crucible, then putting the crucible into a high-temperature box type furnace to heat, and carrying out heat preservation and melting for 0.5-1.5 hours at 950-1050 ℃ to obtain uniform and clear glass melt; 3) Quenching the melted glass liquid in deionized water, and taking out glass particles after cooling; 4) Ball milling is carried out on the glass obtained by drying in a ball mill, so as to obtain glass slurry; 5) Placing the glass slurry obtained in the step 4) into a blast oven with the set temperature of 100-120 ℃ for full drying, and obtaining the low-melting-point glass powder; 6) Stirring and mixing the organic carrier and the organic auxiliary agent, adding other components in batches, stirring and mixing, and dispersing for 0.5-12 hours by a mechanical dispersing method; 7) And grinding and rolling the dispersed and mixed components on a three-roller grinder to obtain the electrode slurry for contacting with the undoped p+ surface of the solar cell.
In order to achieve the above object, according to still another aspect of the present application, there is provided a use of an electrode paste in a solar cell, the electrode paste being the above electrode paste or the electrode paste manufactured by the above manufacturing method.
Compared with the scheme in the prior art, the application has the advantages that:
1. the application discloses an electrode slurry for contact with an undoped p+ surface of a solar cell, which comprises low-melting-point glass powder as raw materials, wherein the low-melting-point glass powder has low softening point, is easy to level after melting, has good wetting ability on a passivation film and inorganic powder, and can burn through the passivation film during sintering;
2. according to the application, aluminum powder, aluminum boron alloy powder and metal powder (such as Mg, co, ni, pd, pt and Ti powder) for forming metal silicide are added, so that the electrode slurry can form a p+ heavily doped layer with a silicon substrate after sintering, and form metal silicide with low contact resistivity, and further the electrode slurry and an undoped p+ type silicon substrate can form ohmic contact;
3. the width of the fine grid obtained by screen printing is less than 40 mu m, and the shielding of light is less.
Detailed Description
The following description of the technical solutions in the embodiments of the present disclosure will be made clearly and completely in connection with the embodiments of the present disclosure, and it is apparent that the described embodiments are some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.
Specific embodiments of the present disclosure are described in detail below.
In one embodiment, an electrode paste for contact with an undoped p+ side of a solar cell comprises the following components in weight percent: 30-80% of silver powder, 0.5-40% of aluminum powder, 0.1-20% of aluminum boron alloy powder, 1-10% of low-melting glass powder, 0.1-5% of metal powder for forming metal silicide, 5-20% of organic carrier and 0.1-3% of additive. Wherein the boron content in the aluminum boron alloy powder is 0.1-1wt%. The metal powder for forming the metal silicide comprises one or more of Mg, co, ni, pd, pt, ti.
In one embodiment, an electrode paste for contact with an undoped p+ side of a solar cell comprises the following components in weight percent: 30-80% of silver powder, 0.5-40% of aluminum powder, 0.1-20% of aluminum boron alloy powder, 1-8% of low-melting glass powder, 0.1-5% of metal powder for forming metal silicide, 7-20% of organic carrier and 0.1-3% of additive. Wherein the boron content in the aluminum boron alloy powder is 0.1-1wt%. The metal powder for forming the metal silicide comprises one or more of Mg, co, ni, pd, pt, ti.
In one embodiment, an electrode paste for contact with an undoped p+ side of a solar cell comprises the following components in weight percent: 30 to 69.9 percent of silver powder, 0.5 to 40 percent of aluminum powder, 0.1 to 0.49 percent or 10.1 to 20 percent of aluminum boron alloy powder, 1 to 8 percent of low-melting glass powder, 0.1 to 5 percent of metal powder for forming metal silicide, 10.1 to 20 percent of organic carrier and 0.1 to 3 percent of additive. Wherein the boron content in the aluminum boron alloy powder is 0.1-1wt%. The metal powder for forming the metal silicide comprises one or more of Mg, co, ni, pd, pt, ti.
Specifically, the silver powder may be at least one of spherical silver powder, plate-like silver powder, and microcrystalline silver powder. The conductive property of the conductive silver paste can be improved by the surface or line contact between the flake silver powder, the silver powder content of the conductive silver paste prepared by the flake silver powder can be properly reduced, and the conductive silver paste with low silver content and high conductivity can be obtained, but the printing property and bending resistance of the conductive silver paste prepared by the flake silver powder can be correspondingly reduced. The spherical silver powder is in point contact, so that the rheological property of the silver paste can be improved, the spherical silver powder is suitable for a solar cell panel with higher requirements on mechanical properties such as printing characteristics, bending resistance and the like, and the defect is that the conductivity is correspondingly reduced, so that higher silver powder content is required, and meanwhile, the viscosity of the conductive silver paste is increased due to the high silver powder content, so that the printing adaptability of the conductive silver paste is affected. Compared with the common spherical silver micro powder, the microcrystalline silver powder with the hollow structure has higher specific surface area and sintering activity, is favorable for obtaining higher sintering density, can effectively reduce film forming resistivity and improves the electrical property of the slurry. The main functions of the aluminum powder are as follows: and reacting with silicon in the sintering process, and cooling to form a p+ heavily doped layer of aluminum. The aluminum boron alloy powder has the main functions that: the doping source of the p-type impurity is increased, the doping concentration is increased, and the contact potential barrier is reduced so as to be beneficial to forming ohmic contact. The main function of the metal powder for forming metal silicide is as follows: after sintering, metal silicide is formed with silicon, the metal silicide has low contact resistivity, and can be nailed into the heavily doped layer of aluminum, so that ohmic contact between the electrode and the silicon is facilitated.
Compared with the scheme in the prior art, the embodiment has the advantages that:
1. the embodiment discloses an electrode slurry for contact with an undoped p+ surface of a solar cell, wherein the electrode slurry comprises low-melting-point glass powder, has low softening point, is easy to level after melting, has good wetting ability on a passivation film and inorganic powder, and can burn through the passivation film during sintering;
2. in this embodiment, aluminum powder, aluminum boron alloy powder and metal powder (for example, mg, co, ni, pd, pt and Ti powder) for forming metal silicide are added, so that the electrode paste can form a p+ heavily doped layer with a silicon substrate after sintering, and form metal silicide with low contact resistivity, and further the electrode paste can form ohmic contact with an undoped p+ silicon substrate.
In one embodiment, the softening point of the low-melting glass powder is 250-550 ℃, and the particle diameter D of the low-melting glass powder 50 0.5-3 μm.
Preferably, the softening point of the low melting point glass powder is 250-380 ℃.
More preferably, the softening point of the low melting point glass frit is 250 ℃.
In one embodiment, the glass frit is prepared from the following raw materials in mole percent: 30-80% PbO (e.g., 30% PbO, 40% PbO, 50% PbO, 60% PbO, 70% PbO, 80% PbO), 1-15% ZnO (e.g., 1% ZnO, 3% ZnO,5% ZnO, 8% ZnO, 10% ZnO, 15% ZnO), 1-15% BaO (e.g., 1% BaO, 3% BaO, 5% BaO, 8% BaO, 10% BaO, 15% BaO), 1-20% B 2 O 3 (e.g. 1% B) 2 O 3 、3％B 2 O 3 、5％B 2 O 3 、10％B 2 O 3 、15％B 2 O 3 、20％B 2 O 3 )、1-10％SiO 2 (e.g. 1% SiO) 2 、3％SiO 2 、5％SiO 2 、8％SiO 2 、10％SiO 2 )，0.5-10％MoO 3 (e.g. 0.5% MoO) 3 、3％MoO 3 、5％MoO 3 、8％MoO 3 、10％MoO 3 ) 1-15% group III oxides (e.g., 1% group III oxides, 3% group III oxides, 5% group III oxides, 8% group III oxides, 10% group III oxides, 15% group III oxides), 1-10% fluxing agents (e.g., 1% fluxing agent, 3% fluxing agent, 5% fluxing agent, 8% fluxing agent, 10% fluxing agent), 1-10% rare earth oxides (e.g., 1% rare earth oxides, 3% rare earth oxides, 5% rare earth oxides, 8% rare earth oxides, 10% rare earth oxides), the sum of the mole percentages of the raw materials being 100%.
Specifically, znO is used as a network intermediate, and can adjust the network structure of glass; baO has stronger polarity, is a typical network external body, has strong network breaking capacity and can well promote fusion; b (B) 2 O 3 As a network former, there is good meltability; siO (SiO) 2 Also a network former, which can improve the stability of the glass; moO (MoO) 3 As a good hole-selective material, helps the electrode collect holes and improves the ability to contact p-type silicon. The effect of adding the group III oxide is to enhance the p-type doping concentration in the silicon to facilitate ohmic contact formation. The fluxing agent has the functions of reducing the processing temperature of the glass and helping the melting of the glass; and secondly, the softening point of the glass is reduced, so that the glass can be completely corroded through the passivation layer on the front surface under the low-temperature sintering condition.
In one embodiment, the third main group oxide includes Al 2 O 3 、Ga 2 O 3 、In 2 O 3 At least one of or for forming Al by heating 2 O 3 、Ga 2 O 3 、In 2 O 3 At least one metal salt of (a) and (b). It should be emphasized that the third main group oxide in the low melting glass powder of the present application does not include Tl 2 O 3 。
In one embodiment, the fluxing agent comprises at least one of an alkali metal oxide, an alkaline earth metal oxide, and a fluorine-containing fluxing agentOne of the two. Wherein the alkali metal oxide comprises Na 2 O、Li 2 O、K 2 At least one of O or Na is formed by heating 2 O、Li 2 O、K 2 A metal salt of at least one of O. The alkaline earth metal oxide comprises at least one of BeO, caO, srO, mgO or a metal salt for forming at least one of BeO, caO, srO, mgO by heating. The fluorine-containing fluxing agent comprises PbF 2 、AlF 3 、LiF、CaF 2 Or Na (or) 3 AlF 6 At least one of them.
In one embodiment, the rare earth oxide comprises La 2 O 3 、Y 2 O 3 、CeO 2 、Yb 2 O 3 、Sc 2 O 3 、Eu 2 O 3 At least one of the metal salts or a metal salt for forming at least one of the metal salts by heating.
Specifically, the rare earth oxide has the effects that firstly, the trivalent rare earth ion energy level in silicon is increased, so that the carrier is easy to transition between the energy levels, the contact performance of electrode slurry and p-type silicon is further enhanced, and secondly, part of rare earth elements have strong reducibility, silver ions dissolved in glass can be reduced into silver microcrystals or silver sol, and a conductive path is increased.
In one embodiment, the organic carrier comprises the following raw materials in percentage by weight: 50-80% of solvent, 5-30% of organic resin, 1-5% of dispersing agent and 1-10% of thixotropic agent. Wherein the solvent comprises at least one of terpineol, alcohol ester twelve, polyethylene glycol, diethylene glycol monobutyl ether acetate and propylene glycol butyl ether. The organic resin includes at least one of methyl cellulose, ethyl cellulose, PVB, and an acrylic resin. The thixotropic agent comprises at least one of hydrogenated castor oil and a modified polyamide wax.
Specifically, the dispersing agent can be a dispersing agent commonly used in the field, and has the functions of dispersing powder, adjusting viscosity and stabilizing a carrier. The thixotropic agent plays a role in adjusting the thixotropic property of the slurry.
In one embodiment, the silverThe powder is spherical silver powder with particle diameter D 50 Is 0.1-5 mu m, tap density>5.0g/cm 3 Silver powder particle size span (D 90 -D 10 )/D 50 < 2; and/or the particle diameter D of the aluminum powder 50 1-10 mu m, wherein the activity of the aluminum powder is measured by a redox titration method, and the content of the active aluminum is 98.8-99.8wt%; and/or the grain diameter D of the aluminum-boron alloy 50 Is 0.5-5 μm, particle diameter D 100 Less than 10 μm; and/or the particle diameter D of the metal powder for forming metal silicide 50 Is 0.5-3 μm, particle diameter D 100 ＜10μm。
In one embodiment, the additive comprises at least one of an organic additive, an inorganic additive. The organic additive comprises at least one of a surfactant, a thixotropic agent, a thickening agent and a leveling agent. The inorganic additive is at least one of aluminum-silicon alloy powder and boron powder.
Specifically, the organic additive of the application can be added with surfactants, thixotropic agents, thickening agents, leveling agents and the like which are commonly used in the field according to the performance requirement of the slurry, so as to adjust the rheological property of the slurry and meet the requirement of screen printing.
In one embodiment, the aluminum-silicon alloy powder comprises Al 88 Si 12 、Al 80 Si 20 Or Al 60 Si 40 At least one of the aluminum-silicon alloy powder with the grain diameter D 50 Is 0.5-3 μm, particle diameter D 100 And < 10 μm. The boron powder is amorphous boron powder, and the particle diameter D of the boron powder 50 Is 0.05-1 μm.
Specifically, the aluminum-silicon alloy powder has the main function of increasing the concentration of silicon in the electrode, and the higher concentration of silicon in the electrode can reduce the concentration gradient difference with the silicon substrate, inhibit the outward expansion of silicon into the slurry during the aluminum-silicon reaction and reduce metal recombination. The boron powder is amorphous boron powder with particle diameter D 50 The boron powder is used as a supplement to the boron source in the range of 0.05-1 μm, and the doping concentration of the p+ layer is further increased so as to form ohmic contact.
In one embodiment, a method for preparing an electrode slurry includes the steps of:
1) And respectively weighing the raw materials for preparing the glass powder, and uniformly mixing the raw materials by using a V-shaped mixer to obtain the mixed raw materials.
2) The mixed raw materials are put into a crucible, the crucible is put into a high-temperature box type furnace to be heated, and the temperature is kept at 950-1050 ℃ to melt for 0.5-1.5 hours, thus obtaining even and clear glass melt.
3) Quenching the molten glass liquid in deionized water, and taking out glass particles after cooling.
4) And ball milling is carried out on the glass obtained by drying in a ball mill, so as to obtain glass slurry.
5) And (3) placing the glass powder slurry obtained in the step (4) into a blast oven with the set temperature of 100-120 ℃ for full drying, and obtaining the low-melting-point glass powder.
6) Stirring and mixing the organic carrier and the organic aid, adding other components in batches, stirring and mixing, and dispersing for 0.5-12 hours by a mechanical dispersing method.
7) And grinding and rolling the dispersed and mixed components on a three-roller grinder to obtain the electrode slurry for contacting with the undoped p+ surface of the solar cell.
In one embodiment, the electrode paste is used in a solar cell, and the electrode paste is the electrode paste or the electrode paste prepared by the preparation method. It should be noted that the electrode paste of the present application is mainly applied to undoped p-regions on the front surface of a p-type TOPCON battery, undoped p-regions of a p-type IBC/TBC battery, or other battery structures having undoped p-regions, and the electrode paste of the present application may form ohmic contact with the undoped p-regions, and meanwhile, the electrode prepared by screen printing the electrode paste has a narrower line width.
The advantages of this embodiment are:
1. the embodiment discloses an electrode slurry for contact with an undoped p+ surface of a solar cell, wherein the electrode slurry comprises low-melting-point glass powder, has low softening point, is easy to level after melting, has good wetting ability on a passivation film and inorganic powder, and can burn through the passivation film during sintering;
2. in the embodiment, aluminum powder, aluminum boron alloy powder and metal powder (such as Mg, co, ni, pd, pt and Ti powder) for forming metal silicide are added, so that the electrode slurry can form a p+ heavily doped layer with a silicon substrate after sintering, and form metal silicide with low contact resistivity, and further the electrode slurry and an undoped p+ silicon substrate can form ohmic contact;
3. the thin grating width obtained by screen printing in this example is less than 40 μm, and the light shielding is small.
For better illustrating the objects, technical solutions and advantages of the present application, the present application will be further described with reference to the following specific examples, which are provided for illustrating the present application, and the scope of the present application is not limited to the following examples.
Example 1
An electrode paste for contact with an undoped p+ face of a solar cell comprising the following components in weight percent: 75% of silver powder, 5% of aluminum powder, 2% of aluminum boron alloy powder, 6% of low-melting-point glass powder, 3% of nickel powder for forming metal silicide, 8.3% of organic carrier, 0.2% of boron powder and 0.5% of BYK110.
The low-melting-point glass powder is prepared by the following method: weighing 50% of PbO,5% of ZnO,5% of BaO and 25% of B according to mole percentage 2 O 3 、5％SiO 2 ，2％MoO 3 ，3％Al 2 O 3 ，3％Li 2 O，2％Y 2 O 3 . Further, an equimolar percentage of BaCO may be weighed 3 Instead of BaO, baCO3 can generate BaO by heating; equimolar percentage H can be weighed 3 BO 3 Substitute B 2 O 3 ，H 3 BO 3 B can be produced by heating 2 O 3 The method comprises the steps of carrying out a first treatment on the surface of the Equimolar percentage of Al (OH) can be weighed 3 Substitution of Al 2 O 3 ，Al(OH) 3 Al can be generated by heating 2 O 3 The method comprises the steps of carrying out a first treatment on the surface of the Equimolar percentage of Li can be weighed 2 CO 3 Substitution of Li 2 O，Li 2 CO 3 Li can be generated by heating 2 O. The raw materials are respectively weighed and uniformly mixed by a V-shaped mixer to obtain the mixed raw materials. The mixed raw materials are put into a crucible, the crucible is put into a high-temperature box type furnace to be heated, and the temperature is kept at 1000 ℃ for melting for 1 hour, so that uniform and clear glass melt is obtained. Quenching the molten glass liquid in deionized water, and taking out glass particles after cooling. And ball milling the dried glass in a ball mill for 12 hours to obtain glass slurry. And (3) putting the obtained glass powder slurry into a blast oven with the set temperature of 120 ℃ for full drying, thus obtaining the low-melting glass powder. Wet testing the prepared low-melting-point glass powder with a laser particle size analyzer to obtain the median particle size, D 50 1.5 μm, and the softening point temperature of the glass frit was 380℃using a high temperature muffle furnace.
The preparation method of the electrode slurry for contact with the undoped p+ surface of the solar cell comprises the following steps: stirring and mixing the organic carrier and the organic aid, adding other components in batches, stirring and mixing, and dispersing for 0.5-12 hours by a mechanical dispersing method. Wherein the mechanical dispersing method is to use a planetary dispersing machine for dispersing. And grinding and rolling the dispersed and mixed components on a three-roller grinder to obtain the electrode slurry for contacting with the undoped p+ surface of the solar cell.
Electrode paste is printed on the passivation layer at the back of the undoped p+ type silicon substrate by a screen printing method, and particularly 25 μm screen printing without net junction is adopted.
Example 2
Example 2 differs from example 1 only in that: the electrode paste of example 2 comprises the following components in percentage by weight: 70% of silver powder, 2% of aluminum powder, 10% of aluminum boron alloy powder, 4% of low-melting glass powder, 3% of titanium powder for forming metal silicide, 2% of palladium powder for forming metal silicide, 8.6% of organic carrier, 0.1% of boron powder and 0.3% of Al 80 Si 20 。
Example 3
Example 3 differs from example 1 only in that: the electrode paste of example 3 comprises the following components in percentage by weight: 60% silver powder, 15% aluminum powder, 5% aluminum boron alloy powder, 8% low melting point glass powder, 1% for forming metalCobalt powder of silicide, 1% platinum powder for forming metal silicide, 9.5% organic carrier, 0.1% Al 80 Si 20 ，0.4％BYK110。
Comparative example 1
An electrode slurry comprises the following components in percentage by weight: 75% of silver powder, 8% of aluminum powder, 2% of aluminum-boron alloy powder, 6% of low-melting-point glass powder and 9% of organic carrier.
Comparative example 1 differs from example 1 in that: the composition of comparative example 1 does not contain metal powder and additives for forming metal silicide; the remaining steps and parameters were the same as in example 1.
Comparative example 2
An electrode slurry comprises the following components in percentage by weight: 75% of silver powder, 5% of aluminum powder, 2% of aluminum-boron alloy powder, 6% of low-melting-point glass powder, 3% of nickel powder for forming metal silicide and 9% of an organic carrier.
Comparative example 2 differs from example 1 in that: the comparative example 2 composition contained no additives; the remaining steps and parameters were the same as in example 1.
Comparative example 3
An electrode slurry comprises the following components in percentage by weight: 75% of silver powder, 8% of aluminum powder, 2% of aluminum-boron alloy powder, 6% of low-melting-point glass powder, 8.3% of organic carrier, 0.2% of boron powder and 0.5% of BYK110.
Comparative example 3 differs from example 1 in that: comparative example 3 the composition does not contain metal powder for forming metal silicide; the remaining steps and parameters were the same as in example 1.
Comparative example 4
An electrode paste, 75% of silver powder, 5% of aluminum powder, 2% of aluminum boron alloy powder, 6% of common glass powder, 3% of nickel powder for forming metal silicide, 8.3% of an organic carrier, 0.2% of boron powder and 0.5% of BYK110.
Comparative example 4 differs from example 1 in that: comparative example 4 is a common glass frit, specifically 10% SiO by weight percent 2 、10％ZnO、15％B 2 O 3 、60％PbO 2 、5％Al 2 O 3 And mixing to obtain a mixture, and mixing the mixtureSmelting at 1000 ℃, preserving heat for 30 minutes, and obtaining common glass powder after water quenching, cooling, crushing, ball milling and drying; the remaining steps and parameters were the same as in example 1.
The solar cells manufactured in examples 1 to 3 and comparative examples 1 to 4 were tested for contact resistivity using the TLM method, and the line width was measured using a 3D microscope. The results are shown in Table 1:
TABLE 1
The results are shown in Table 1, in examples 1-3, since the raw materials comprise low-melting glass powder, the raw materials have low softening points, are easy to level after melting, have good wetting ability on passivation films and inorganic powder, and can burn through the passivation films during sintering; in addition, since the electrode paste can form a p+ heavily doped layer with the silicon substrate after sintering and form a metal silicide having low contact resistivity by adding aluminum powder, aluminum boron alloy powder, and metal powder for forming metal silicide (for example, mg, co, ni, pd, pt and Ti powder), the electrode paste can form ohmic contact with the undoped p+ silicon substrate; the width of the fine grid obtained by screen printing is less than 40 mu m, and the shielding of light is less.
As can be seen from the comparison of example 1 and comparative example 1, since comparative example 1 does not contain metal powder and additives for forming metal silicide, the contact resistivity is significantly higher than that of example 1.
As can be seen from comparing example 1 with comparative example 2, since comparative example 2 contains no additive, the contact resistivity is significantly higher than example 1.
As can be seen from comparison of example 1 and comparative example 2, since comparative example 3 does not contain metal powder for forming metal silicide, the contact resistivity is significantly higher than that of example 1.
As can be seen from comparison of example 1 and comparative example 4, the use of the low melting point glass frit can burn through the passivation film, whereas the conventional lead boron glass cannot burn through the passivation film, resulting in significantly higher contact resistivity than example 1.
While various embodiments of the present application have been shown and described herein, it will be obvious to those skilled in the art that such embodiments are provided by way of example only. Many modifications, changes, and substitutions will now occur to those skilled in the art without departing from the spirit and scope of the application. It should be understood that various alternatives to the embodiments of the application described herein may be employed in practicing the application. The appended claims are intended to define the scope of the application and to cover such modular compositions, equivalents, or alternatives falling within the scope of the claims.
Claims (21)
1. An electrode paste for contact with an undoped p+ surface of a solar cell, characterized by comprising the following components in percentage by weight: 30-75% of silver powder, 2-40% of aluminum powder, 0.1-20% of aluminum boron alloy powder, 1-8% of low-melting glass powder, 0.1-5% of metal powder for forming metal silicide, 7-20% of organic carrier and 0.1-3% of additive;
the boron content in the aluminum-boron alloy powder is 0.1-1wt%;
the low-melting-point glass powder is prepared from the following raw materials in percentage by mole: 30-80% PbO,1-15% ZnO,1-15% BaO,1-20% B 2 O3、1-10％SiO 2 0.5-10% of MoO3,1-15% of third main group oxide, 1-10% of fluxing agent and 1-10% of rare earth oxide, wherein the sum of the mole percentages of the raw materials is 100%.
2. The electrode slurry according to claim 1, wherein the third main group oxide comprises Al 2 O 3 、Ga 2 O 3 、In 2 O 3 At least one of or for forming Al by heating 2 O 3 、Ga 2 O 3 、In 2 O 3 At least one metal salt of (a) and (b).
3. The electrode slurry of claim 1, wherein the flux comprises at least one of an alkali metal oxide, an alkaline earth metal oxide, a fluorine-containing flux.
4. The electrode slurry of claim 3, wherein the alkali metal oxide comprises Na 2 O、Li 2 O、K 2 At least one of O or Na is formed by heating 2 O、Li 2 O、K 2 A metal salt of at least one of O.
5. An electrode slurry according to claim 3, wherein the alkaline earth metal oxide comprises at least one of BeO, caO, srO, mgO or a metal salt for forming at least one of BeO, caO, srO, mgO by heating.
6. The electrode slurry of claim 3 wherein the fluorine-containing flux comprises PbF 2 、AlF 3 、LiF、CaF 2 Or Na (or) 3 AlF 6 At least one of them.
7. The electrode slurry of claim 1, wherein the rare earth oxide comprises La 2 O 3 、Y 2 O 3 、CeO 2 、Yb 2 O 3 、Sc 2 O 3 、Eu 2 O 3 At least one of or for forming La by heating 2 O 3 、Y 2 O 3 、CeO 2 、Yb 2 O 3 、Sc 2 O 3 、Eu 2 O 3 At least one metal salt of (a) and (b).
8. The electrode paste according to claim 1, wherein the softening point of the low-melting glass frit is 250-550 ℃, and the particle diameter D of the low-melting glass frit 50 0.5-3 μm.
9. The electrode slurry according to claim 1, wherein the organic carrier comprises the following raw materials in weight percent: 50-80% of solvent, 5-30% of organic resin, 1-5% of dispersing agent and 1-10% of thixotropic agent.
10. The electrode slurry of claim 9, wherein the solvent comprises at least one of terpineol, alcohol ester twelve, polyethylene glycol, diethylene glycol monobutyl ether acetate, propylene glycol butyl ether.
11. The electrode slurry of claim 9, wherein the organic resin comprises at least one of methylcellulose, ethylcellulose, PVB, and acrylic resin.
12. The electrode slurry of claim 9, wherein the thixotropic agent comprises at least one of hydrogenated castor oil and a modified polyamide wax.
13. The electrode paste according to claim 1, wherein the silver powder is spherical silver powder having a particle diameter D 50 Is 0.1-5 mu m, tap density>5.0g/cm 3 Silver powder particle size span (D 90 -D 10 )/D 50 ＜2；
And/or the particle diameter D of the aluminum powder 50 1-10 mu m, wherein the activity of the aluminum powder is measured by a redox titration method, and the content of the active aluminum is 98.8-99.8wt%;
and/or the grain diameter D of the aluminum-boron alloy 50 Is 0.5-5 μm, particle diameter D 100 ＜10μm；
And/or the particle diameter D of the metal powder for forming metal silicide 50 Is 0.5-3 μm, particle diameter D 100 ＜10μm。
14. The electrode slurry of claim 1, wherein the metal powder for forming metal silicide comprises one or more of Mg, co, ni, pd, pt, ti.
15. The electrode slurry of claim 1, wherein the additive comprises at least one of an organic additive and an inorganic additive.
16. The electrode slurry of claim 15, wherein the organic additive comprises at least one of a surfactant, a thixotropic agent, a thickening agent, and a leveling agent.
17. The electrode slurry according to claim 15, wherein the inorganic additive is at least one of aluminum-silicon alloy powder and boron powder.
18. The electrode slurry of claim 17, wherein the aluminum-silicon alloy powder comprises Al 88 Si 12 、Al 80 Si 20 Or Al 60 Si 40 At least one of the aluminum-silicon alloy powder with the grain diameter D 50 Is 0.5-3 μm, particle diameter D 100 ＜10μm。
19. The electrode slurry of claim 17, wherein the boron powder is an amorphous boron powder having a particle size D 50 Is 0.05-1 μm.
20. A method of preparing an electrode slurry according to any one of claims 1 to 19, comprising the steps of:
1) Respectively weighing the raw materials for preparing the low-melting-point glass powder, and uniformly mixing the raw materials by using a V-shaped mixer to obtain mixed raw materials;
2) Putting the mixed raw materials into a crucible, then putting the crucible into a high-temperature box type furnace to heat, and carrying out heat preservation and melting for 0.5-1.5 hours at 950-1050 ℃ to obtain uniform and clear glass melt;
3) Quenching the melted glass liquid in deionized water, and taking out glass particles after cooling;
4) Ball milling is carried out on the glass obtained by drying in a ball mill, so as to obtain glass slurry;
5) Placing the glass slurry obtained in the step 4) into a blast oven with the set temperature of 100-120 ℃ for full drying, and obtaining the low-melting-point glass powder;
6) Stirring and mixing the organic carrier and the organic auxiliary agent, adding other components in batches, stirring and mixing, and dispersing for 0.5-12 hours by a mechanical dispersing method;
7) And grinding and rolling the dispersed and mixed components on a three-roller grinder to obtain the electrode slurry for contacting with the undoped p+ surface of the solar cell.
21. Use of an electrode paste in a solar cell, characterized in that the electrode paste is an electrode paste according to any one of claims 1 to 19 or an electrode paste produced by the production method according to claim 20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211644980.XA CN116130141B (en) | 2022-12-20 | 2022-12-20 | Electrode slurry and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211644980.XA CN116130141B (en) | 2022-12-20 | 2022-12-20 | Electrode slurry and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116130141A CN116130141A (en) | 2023-05-16 |
| CN116130141B true CN116130141B (en) | 2023-12-12 |
Family
ID=86307171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211644980.XA Active CN116130141B (en) | 2022-12-20 | 2022-12-20 | Electrode slurry and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116130141B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117711668A (en) * | 2024-02-06 | 2024-03-15 | 晶澜光电科技(江苏)有限公司 | N-type solar cell P+ emitter conductive paste and N-type solar cell |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934106A (en) * | 2015-06-30 | 2015-09-23 | 青岛宇星智能科技开发有限公司 | Environmentally-friendly solar cell paste |
| CN112562883A (en) * | 2020-12-01 | 2021-03-26 | 广州市儒兴科技开发有限公司 | Electrode paste in contact with P + emitter of N-type solar cell |
| CN114203335A (en) * | 2021-11-30 | 2022-03-18 | 江苏正能电子科技有限公司 | Front aluminum paste suitable for N-type TOPCon battery and preparation method thereof |
| CN114220586A (en) * | 2021-11-30 | 2022-03-22 | 江苏正能电子科技有限公司 | Main grid silver paste matched with N-type TOPCon battery front aluminum paste for use and preparation method thereof |
| CN114334215A (en) * | 2022-01-06 | 2022-04-12 | 浙江优英光电科技有限公司 | Electrode slurry for ohmic contact of P-type emitter region of silicon solar cell |
| CN114822908A (en) * | 2022-04-19 | 2022-07-29 | 广州市儒兴科技股份有限公司 | Silver-aluminum paste for P + surface of TOPcon battery with high sheet resistance and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160133351A1 (en) * | 2014-11-04 | 2016-05-12 | E I Du Pont De Nemours And Company | Conductive paste for a solar cell electrode |
-
2022
- 2022-12-20 CN CN202211644980.XA patent/CN116130141B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934106A (en) * | 2015-06-30 | 2015-09-23 | 青岛宇星智能科技开发有限公司 | Environmentally-friendly solar cell paste |
| CN112562883A (en) * | 2020-12-01 | 2021-03-26 | 广州市儒兴科技开发有限公司 | Electrode paste in contact with P + emitter of N-type solar cell |
| CN114203335A (en) * | 2021-11-30 | 2022-03-18 | 江苏正能电子科技有限公司 | Front aluminum paste suitable for N-type TOPCon battery and preparation method thereof |
| CN114220586A (en) * | 2021-11-30 | 2022-03-22 | 江苏正能电子科技有限公司 | Main grid silver paste matched with N-type TOPCon battery front aluminum paste for use and preparation method thereof |
| CN114334215A (en) * | 2022-01-06 | 2022-04-12 | 浙江优英光电科技有限公司 | Electrode slurry for ohmic contact of P-type emitter region of silicon solar cell |
| CN114822908A (en) * | 2022-04-19 | 2022-07-29 | 广州市儒兴科技股份有限公司 | Silver-aluminum paste for P + surface of TOPcon battery with high sheet resistance and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116130141A (en) | 2023-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112562883B (en) | Electrode slurry contacted with N-type solar cell p + emitter | |
| US9129725B2 (en) | Conductive paste composition containing lithium, and articles made therefrom | |
| US8486308B2 (en) | Conductive paste composition containing lithium, and articles made therefrom | |
| CN104599741A (en) | Positive silver electrode slurry for silicon solar cell with high sheet resistance | |
| US9087937B2 (en) | Glass composition and its use in conductive silver paste | |
| CN104751942A (en) | Lead-free conductive paste for filament screen printing of solar cells and preparation method of lead-free conductive paste | |
| US11756699B1 (en) | Conductive silver aluminum paste, preparation method, electrode and cell | |
| CN106477897A (en) | Glass dust and apply this glass dust be obtained anelectrode silver paste, solaode | |
| JP5955791B2 (en) | Paste composition and solar cell | |
| CN104867537A (en) | Low-lead high-sheet-resistance silicon solar battery front-surface silver electrode slurry and preparation method thereof | |
| US20130186463A1 (en) | Conductive silver paste for a metal-wrap-through silicon solar cell | |
| CN111302638B (en) | Glass powder composition, conductive silver paste containing glass powder composition and solar cell | |
| CN110590168A (en) | Glass material for crystalline silicon solar cell, preparation method thereof and silver paste | |
| CN116130141B (en) | Electrode slurry and preparation method and application thereof | |
| CN111302636A (en) | Glass powder composition, conductive silver paste containing glass powder composition and solar cell | |
| CN117253649B (en) | Conductive silver paste for LECO technology sintering, preparation method, electrode and battery | |
| CN107759093B (en) | Glass material for high sheet resistance shallow crystalline silicon solar cell, preparation method thereof and slurry | |
| CN105118873A (en) | Front electrode silver paste of crystalline silicon solar battery | |
| CN109493993B (en) | Silver paste for front electrode of crystalline silicon solar cell and preparation method thereof | |
| CN116721794A (en) | High-performance conductive silver-aluminum paste, preparation method, electrode and N-type TOPCon battery | |
| US20130160835A1 (en) | Back-side electrode of p-type solar cell and method for forming the same | |
| CN111302620A (en) | Glass powder composition, conductive silver paste containing glass powder composition and solar cell | |
| CN111302637A (en) | Glass powder composition, conductive silver paste containing glass powder composition and solar cell | |
| KR101711390B1 (en) | Aluminum paste composition, a rear electrode for solar cell formed using it, and a solar cell employing it | |
| CN114520068A (en) | Electrode slurry in contact with p + poly silicon and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20231110 Address after: Building 1, No. 16, Ruifa Road, Huangpu District, Guangzhou, Guangdong, 510700 Applicant after: Guangzhou Ruxing Technology Development Co.,Ltd. Applicant after: WUXI RUXING TECHNOLOGY DEVELOPMENT Co.,Ltd. Applicant after: Guangzhou Ruxing New Material Technology Co.,Ltd. Address before: Building 1, No. 16, Ruifa Road, Huangpu District, Guangzhou, Guangdong, 510700 Applicant before: Guangzhou Ruxing Technology Development Co.,Ltd. Applicant before: WUXI RUXING TECHNOLOGY DEVELOPMENT Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |