CN108431964B - Paste composition for front electrode of solar cell and solar cell using the same - Google Patents
Paste composition for front electrode of solar cell and solar cell using the same Download PDFInfo
- Publication number
- CN108431964B CN108431964B CN201680058386.9A CN201680058386A CN108431964B CN 108431964 B CN108431964 B CN 108431964B CN 201680058386 A CN201680058386 A CN 201680058386A CN 108431964 B CN108431964 B CN 108431964B
- Authority
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- China
- Prior art keywords
- solar cell
- paste composition
- front electrode
- present
- weight
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 62
- 239000011521 glass Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000000843 powder Substances 0.000 claims description 25
- 239000011230 binding agent Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 7
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910003069 TeO2 Inorganic materials 0.000 claims description 6
- 239000011133 lead Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 239000012461 cellulose resin Substances 0.000 claims description 2
- 229920013716 polyethylene resin Polymers 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 229910000464 lead oxide Inorganic materials 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 14
- 229910000679 solder Inorganic materials 0.000 description 12
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 10
- 238000007639 printing Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- XJMMNTGIMDZPMU-UHFFFAOYSA-N 3-methylglutaric acid Chemical compound OC(=O)CC(C)CC(O)=O XJMMNTGIMDZPMU-UHFFFAOYSA-N 0.000 description 2
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 2
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- OMVSWZDEEGIJJI-UHFFFAOYSA-N 2,2,4-Trimethyl-1,3-pentadienol diisobutyrate Chemical compound CC(C)C(=O)OC(C(C)C)C(C)(C)COC(=O)C(C)C OMVSWZDEEGIJJI-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- HXNDUMRFWWGNQX-UHFFFAOYSA-N [5,5-dimethyl-1-(2-methylpropanoyloxy)hexyl] 2-methylpropanoate Chemical compound C(C(C)C)(=O)OC(CCCC(C)(C)C)OC(C(C)C)=O HXNDUMRFWWGNQX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- DBLVXHJTZIDGHE-UHFFFAOYSA-N ethyl acetate;2-(2-hydroxyethoxy)ethanol Chemical compound CCOC(C)=O.OCCOCCO DBLVXHJTZIDGHE-UHFFFAOYSA-N 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 239000010665 pine oil Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920005678 polyethylene based resin Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Abstract
The present invention relates to a paste composition for a front electrode of a solar cell and a solar cell formed using the same. The paste composition for the front electrode of the solar cell, which is related by the invention, can be used for preparing the front electrode of the solar cell and has the advantage of environmental protection due to low lead oxide content. In addition, the paste composition for a front electrode of a solar cell according to the present invention has not only excellent etching ability but also low contact resistance with an anti-reflection film, and thus a solar cell using the front electrode for a solar cell formed from the paste composition has high energy conversion efficiency.
Description
Technical Field
The present invention relates to a paste composition for a front electrode of a solar cell and a solar cell formed using the same.
Background
A solar cell (solar cell) is a semiconductor element that converts solar energy into electric energy, and is composed of a semiconductor wafer, an antireflection film, a front surface electrode, and a back surface electrode. The solar cell induces a P-N junction photoelectric effect of the semiconductor wafer by incident sunlight, and electrons generated thereby provide a current flowing to the outside via the electrode.
Wherein the front electrode is formed by applying a metal paste on one surface of the wafer. A paste composition containing a metal, a glass frit, or the like is applied to a substrate by a general screen printing method or the like to form an electrode circuit having a specific shape, and is dried and sintered to impart conductivity.
In particular, since the front electrode is positioned at the uppermost portion of the solar cell, there is a need to increase conductivity while minimizing shading loss (shading loss), and thus there has been a demand for developing a metal paste having excellent adhesion and lower contact resistance characteristics. Among them, Glass frit (Glass frit), which is an important composition of metal paste, is being studied particularly actively.
The glass frit etches the anti-reflection film by an interface reaction with the anti-reflection film, which is an oxidation-reduction reaction, and a part of the elements are reduced to generate by-products. Since the conventional glass frit has a high content of lead oxide (PbO), lead is reduced after an interface reaction, thereby causing an environmental problem.
Therefore, there is still a need for a paste for a front electrode of a solar cell that is environment-friendly and can provide more excellent conversion efficiency and resistance characteristics than before.
Disclosure of Invention
Technical problem
The present invention has been made to solve the problems as described above, and aims to provide a paste composition for forming a front electrode of a solar cell, which reduces the content of lead oxide and has excellent conversion efficiency.
Further, the present invention is directed to a solar cell prepared using the paste composition for a front electrode of a solar cell of the present invention.
Technical scheme
The present invention relates to a high-efficiency paste composition for a front electrode of a solar cell, the paste composition for a front electrode of a solar cell of the present invention comprising:
a conductive metal powder;
glass frit comprising 20 to 60 wt.% of TeO21 to 30 wt% of PbO, 1 to 20 wt% of ZnO and 1 to 30 wt% of Bi2O3(ii) a And
an organic vehicle.
The glass frit of the present invention may further comprise a material selected from the group consisting of SiO2、Li2O、B2O3、Al2O3、CuO、Na2O、ZrO2、MgO、P2O5、CaO、BaO、SnO、SrO、K2O、TiO2And MnO2One or more of the group consisting of.
The glass frit of the present invention may contain 20 to 60% by weight of TeO21 to 30 wt% of PbO, 1 to 20 wt% of ZnO, 1 to 30 wt% of Bi2O30.1 to 5% by weight of Li2O, 0.1 to 15% by weight of SiO2And 0.1 to 10% by weight of B2O3。
The content of the glass frit of the present invention may be 0.1 to 15% by weight with respect to the paste composition.
The conductive metal powder of the present invention may contain one or more selected from silver, gold, copper, nickel, aluminum, palladium, chromium, cobalt, tin, lead, zinc, iron, tungsten, magnesium, and alloys thereof. The content of the conductive metal powder may be 60 to 99.5 wt% with respect to the paste composition.
The organic vehicle of the present invention is formed by dissolving an organic binder in a solvent, and the content of the organic vehicle may be 0.1 to 35% by weight with respect to the slurry composition. The organic binder may include one or more selected from a cellulose-based resin, an acrylic-based resin, and a polyethylene-based resin.
The present invention can provide a solar cell front electrode prepared using the paste composition for a solar cell front electrode and a solar cell including the same.
Effects of the invention
The paste composition for the front electrode of the solar cell, which is related by the invention, can be used for preparing the front electrode of the solar cell and has the advantage of environmental protection due to low lead oxide content.
The paste composition for a front electrode of a solar cell according to the present invention has not only excellent etching ability but also low contact resistance with an anti-reflective coating, and thus a solar cell using a front electrode for a solar cell formed from the paste composition has high energy conversion efficiency.
Detailed Description
Next, the paste composition for a front electrode of a solar cell according to the present invention will be described in detail. In this case, if technical terms and technical terms used are not defined otherwise, the technical terms and technical terms used have meanings commonly understood by those skilled in the art to which the present invention belongs, and descriptions of well-known functions and structures that may unnecessarily obscure the gist of the present invention are omitted in the following description.
In the present invention, a solar cell (solar cell) refers to a semiconductor element that converts solar energy into electric energy, and the solar cell is composed of a semiconductor wafer, an antireflection film, a front surface electrode, and a back surface electrode.
The present invention relates to a paste composition for a front electrode of a solar cell, comprising:
a conductive metal powder;
glass frit comprising 20 to 60 wt.% of TeO21 to 30 wt% of PbO, 1 to 20 wt% of ZnO and 1 to 30 wt% of Bi2O3(ii) a And
an organic vehicle.
The glass frit contained in the paste composition for a front electrode of the present invention may induce the following effects: the anti-reflection film is etched in the sintering process, and the adhesion between the conductive metal powder and the wafer is improved and the sintering temperature is further lowered.
The glass frit etches the anti-reflection film by an interface reaction with the anti-reflection film, which is an oxidation-reduction reaction, and a by-product is generated by reducing a part of the elements. Since the conventional glass frit has a high content of lead oxide (PbO), lead is reduced after an interface reaction, thereby causing an environmental problem.
Thus, the paste composition for front electrodes of the present invention can increase the content of ZnO and Bi by reducing the content of lead oxide conventionally used2O3In an amount to introduce a slurry composition for a front electrode which is environmentally friendly and excellent in etching ability.
Further, the paste composition for front electrode of the present invention can contain TeO2The etching capability is further improved while the adhesive force between the substrate and the front electrode is improved, and the contact resistance between the paste composition and the anti-reflection film is reduced to improve the open circuit voltage.
In order to improve the luminous efficiency of the solar cell, the glass frit of the present invention may include 20 to 60 wt% of TeO with respect to the total content of the glass frit21 to 30 wt% of PbO, 1 to 20 wt% of ZnO and 1 to 30 wt% of Bi2O3But is not limited thereto.
In order to improve the effect of the excitation voltage, the glass of the inventionThe powder may further comprise a material selected from the group consisting of SiO2、Li2O、B2O3、Al2O3、CuO、Na2O、ZrO2、MgO、P2O5、CaO、BaO、SnO、SrO、K2O、TiO2And MnO2More preferably, the lithium compound may further contain Li2O、SiO2And B2O3。
The excitation voltage is a voltage necessary to provide the minimum energy required for excitation by causing collision of atoms or molecules, and exhibits an effect of improving the efficiency of the solar cell.
The Li2O、SiO2And B2O3The content is not limited, and preferably 0.1 to 5% by weight of Li may be contained2O, 0.1 to 15% by weight of SiO2And 0.1 to 10% by weight of B2O3The glass frit of the present invention may preferably contain 20 to 60% by weight of TeO21 to 30 wt% of PbO, 1 to 20 wt% of ZnO, 1 to 30 wt% of Bi2O30.1 to 5% by weight of Li2O, 0.1 to 15% by weight of SiO2And 0.1 to 10% by weight of B2O3。
The glass frit of the present invention may be composed of an oxygen polyhedron including a network structure of oxygen, and more particularly, an oxygen polyhedron having an irregular network structure. The softening point of the glass frit may be 300 to 500 c, and the electrode is suitably formed due to the appropriate viscosity of the glass melt within the above range, but is not limited thereto.
The glass frit of the present invention has excellent conversion efficiency, and the content of the glass frit may be 0.1 to 15 wt% with respect to the paste composition in order to prevent an increase in resistance and a decrease in weldability, but is not limited thereto.
The glass frit can be prepared using a general method. For example, the glass frit may be added in the above-mentioned component ratio, and the glass frit may be melted at 900 to 1300 ℃ and then rapidly cooled (quenching). The glass frit can be obtained by pulverizing the mixed composition using a ball mill (ball mill), a disk mill (disk mill), a planetary mill (planetary mill), or the like.
The average particle diameter D50 of the glass frit may be 0.1 to 5 μm, preferably 0.5 to 3 μm, but is not limited thereto.
The conductive metal powder of the present invention may be a metal powder generally used in the preparation of an electrode of a solar cell, and may include, for example, one or more selected from the group consisting of silver, gold, copper, nickel, aluminum, palladium, chromium, cobalt, tin, lead, zinc, iron, tungsten, magnesium, and alloys thereof, and preferably may be silver (Ag) having excellent conductivity and forming strong interfacial adhesion with a crystalline inorganic semiconductor such as silicon.
The purity of the conductive metal powder (preferably silver powder) is 80% or more, and preferably silver powder having a purity of 95% or more is used, but the purity is not particularly limited as long as it satisfies the conditions generally required as an electrode.
The conductive metal powder can be used in any shape known in the technical field of the present invention, and is not particularly limited. For example, a sphere, a flake (flake) shape, or a combination thereof may be used, but is not limited thereto.
In addition, the particle size of the conductive metal powder can be adjusted to an appropriate range by considering the influence of a desired sintering rate, a process of forming an electrode, and the like. In the present invention, in order to exhibit the effect of reducing the contact resistance, the average particle diameter of the conductive metal powder may have a size of about 0.1 to 0.5 μm, but is not limited thereto.
In the paste composition for a front electrode of a solar cell according to the present invention, in order that the conductive metal powder does not cause a decrease in viscosity or phase separation of the paste, 60 to 99.5 wt% of the conductive metal powder may be contained, preferably 70 to 99.5 wt% of the conductive metal powder, and more preferably 80 to 99.5 wt% of the conductive metal powder, from the viewpoint of economical efficiency.
The paste composition for a front electrode of a solar cell according to the present invention may include an organic vehicle that performs a viscosity-adjusting function and a dispersant function of solid particles. The organic vehicle may be a binder solution in which an organic binder is dissolved in a solvent.
The organic binder of the present invention may be any organic binder that is generally used, and may include at least one selected from the group consisting of cellulose resins, acrylic resins, and polyethylene resins.
Specifically, the organic binder may include at least one selected from the group consisting of methyl cellulose, ethyl cellulose, carboxymethyl cellulose, nitrocellulose, hydroxy cellulose, ethyl hydroxyethyl cellulose, polymethacrylate, acrylate, butyl acrylate, polyvinyl alcohol, polyvinyl pyrrolidone, and polyvinyl butyral.
The solvent of the organic vehicle may be an organic solvent that dissolves the organic binder, and specifically may be one or more solvents selected from pine oil, diethylene glycol monoethyl acetate, diethylene glycol monobutyl ether acetate, ethylene glycol monobutyl ether acetate, terpineol, methylglutaric acid, di (2-ethylhexyl) phthalate, diethyl phthalate, diisononyl adipic acid, dibasic ester, and the like.
The content of the organic binder contained in the organic vehicle of the present invention may be 10 to 30% by weight with respect to the organic vehicle, but is not limited thereto.
In order to easily disperse the conductive metal powder and maintain high efficiency of the solar cell, the content of the organic vehicle of the present invention is preferably in the range of 0.1 to 35 wt%, more preferably in the range of 10 to 25 wt%, with respect to the paste composition for the front electrode of the solar cell, but is not limited thereto.
The paste composition for a front electrode of a solar cell of the present invention may further contain commonly known additives as needed. Examples of the additive include one or more substances selected from a thickener, a thixotropic agent, a stabilizer, a dispersant, a thixotropic agent, a leveling agent, an antifoaming agent, and the like. The additive content may be about 0.1 to 10% by weight with respect to the paste composition, but may be determined according to the characteristics of the paste composition to be finally obtained for the front electrode of the solar cell.
In addition, the present invention may provide a solar cell front electrode formed using the paste composition.
The front electrode of the present invention may be formed by a process of printing the slurry composition on a wafer substrate and drying and sintering the same. The printing method may utilize screen printing, gravure printing, offset printing, roll-to-roll printing, aerosol printing, inkjet printing or the like, but is not particularly limited to such a printing method.
In addition, the present invention can provide a solar cell including the solar cell front electrode. The solar cell of the present invention can provide excellent conversion efficiency and resistance characteristics, thereby greatly improving the power generation efficiency of the solar cell.
A solar cell according to an embodiment of the present invention is as follows.
The solar cell includes: a first semiconductor layer; a second semiconductor layer formed on the first semiconductor layer; an antireflection film formed on the second semiconductor layer; a front electrode penetrating the antireflection film and connected to the second semiconductor layer; and a back electrode formed on the back surface of the semiconductor layer.
The semiconductor material used for the semiconductor layer may specifically be crystalline silicon, and for example, a silicon wafer may be used. One of the first semiconductor layer and the second semiconductor layer may be a semiconductor layer doped with a p-type impurity, and the other may be a semiconductor layer doped with an n-type impurity. The p-type impurity may be doped with a group iii element (B, Ga, In, etc.), and the N-type impurity may be doped with a group v element (P, As, Sb, etc.).
A P-N junction, which is a portion where current is generated by a photovoltaic effect when receiving sunlight, is formed on an interface between the semiconductor layers. Electrons and holes generated by the photovoltaic effect are attracted to the P layer and the N layer, respectively, to move to the electrodes joined to the lower portion and the upper portion, respectively, and electricity generated therein can be utilized by applying a load to the electrodes.
An anti-reflection film may be formed on the second semiconductor layer. The anti-reflection film reduces the reflectance of sunlight incident on the front surface of the solar cell. If the reflectivity of sunlight is reduced, the amount of light reaching the P-N junction is increased, which may increase the short-circuit current of the solar cell and improve the conversion efficiency of the solar cell.
The antireflection film may be made of a substance that absorbs less light and has insulation properties, and may be, for example, silicon nitride (SiN)x) Silicon oxide (SiO)2) Titanium oxide (TiO)2) Alumina (Al)2O3) Magnesium oxide (MgO), cerium oxide (CeO)2) And combinations thereof, the anti-reflection film may be formed as a single layer or a plurality of layers.
A front electrode may be formed on the upper portion of the anti-reflection film, and a rear electrode may be formed on the rear surface of the semiconductor layer. The electrode may be formed by performing a heat treatment after printing a paste composition including a conductive metal powder on a semiconductor wafer.
A part of the antireflection film may be removed by chemical treatment. The anti-reflection film may be deposited by CVD (chemical vapor deposition), PECVD (plasma enhanced chemical vapor deposition), sputtering, or other methods. By removing a part of the antireflection film, the electrical contact between the semiconductor substrate and the conductor of the paste composition can be improved. The paste composition may be printed in a pattern on the antireflective film, for example, as a bus bar with connecting lines. Printing can be achieved by screen printing, plating, extrusion, ink-jetting, forming or multi-plate printing (printing) or ribbon (ribbon).
In the electrode forming process, the conductive metal powder may be sintered by heating the slurry composition. Typically, the sintering temperature may be set to burn off not only the organic material but also any other organic material present in the slurry composition. In one embodiment, the sintering temperature may be 750 to 950 ℃.
The present invention will be described in more detail below with reference to examples. However, the following examples are only for reference to illustrate the present invention in detail, and the present invention is not limited thereto.
[ examples 1 to 6]
1. Preparation of glass powder
The components listed in Table 1 were mixed at the ratios (wt%) shown in Table 1 below, and then melted at 1100 ℃ for 30 minutes, followed by using pure water (H)2O) Quenching (Quenching) for rapid cooling. The quenched glass melt was pulverized by an Attrition-mill to prepare a glass frit having an average particle size of 1.5 μm.
The components and contents of the glass frits according to the examples are shown in table 1 below.
2. Preparation of slurry composition
Slurry compositions were separately prepared by using the glass frits prepared as described above. As the conductive powder, 90 wt% of silver powder having an average particle diameter of 2 μm was used. 2% by weight of glass frit was used. As the organic binder, 1% by weight of cellulose ester (EASTMAN CBA) and 1% by weight of ethyl cellulose resin (AQUALON ECN) were used, respectively.
As the organic solvent, 2 wt% of TXIB (Trimethyl pentanediol Diisobutyrate), 3 wt% of Dibasic ester (Dimethyl adipate/Dimethyl glutarate/Dimethyl succinate mixture of TCI corporation, Dimethyl adipate/Dimethyl succinate) or 1 wt% of BC (BUTYL CARBITOL) was used.
3. Preparation of solar cell
In the production of solar cells, 156mm monocrystalline silicon wafers were used in a tube furnace (tube furnace) at 810 ℃ by using POCl3Is used to dope phosphorus (P) to form a semiconductor layer having a sheet resistance of 90 Ω/sq, and by a chemical vapor deposition method (PECVD method) using a precursor SiH4And NH3Deposition is performed on the semiconductor layer to form a silicon nitride film having a thickness of 70nm, thereby forming an antireflection film.
As for the back electrode, the above electrode paste composition containing aluminum powder instead of silver powder was used, and after coating the back surface at a thickness of 30 μm by a screen printing method, dried in a drying oven at 250 ℃ for 60 seconds. As for the front electrode, using the paste compositions prepared in examples and comparative examples of the present invention, coating was performed at a thickness of 20 μm by a screen printing method, and then dried in a drying oven at 200 ℃ for 60 seconds. The solar cell was prepared by performing a one-minute sintering process on the printed solar cell in a belt sintering furnace at 820 ℃. The results of evaluating the characteristics of the prepared solar cell are shown in table 2 below.
Comparative examples 1 to 3
Solar cells were prepared by the same method and conditions as in example 1, except that the compositions of the glass frit were different as shown in table 1 below. The results of evaluating the characteristics of the prepared solar cell are shown in table 2 below.
[ Table 1]
[ Property evaluation ]
1. A solar cell was prepared so as to be printed/sintered into a pattern having a three bus bar structure, having a gate line (finger line) width of 50 μm, and having a number of gate lines of 105, and characteristic evaluation was performed. Measuring the electro-optic characteristics of the prepared solar cell, and using a solar simulator with rated power Oriel 1000W at 100mW/cm2The current density-voltage (J-V) characteristics were measured under illumination (AM 1.5G). The measured value is expressed as energy conversion efficiency (%) by the following mathematical formula 1. The conversion efficiency refers to a ratio of an output power of the solar cell to an incident light energy per unit area.
The series resistance value was calculated after measuring the J-V characteristic of the analog device, which was used to understand the correlation with FF.
[ mathematical formula 1]
Energy conversion efficiency (%) < FF x (Jsc × Voc)/Pin
Voc represents the open circuit voltage (V), and Jsc represents the short circuit current (mA/cm)2) FF represents fillFill factor (%), Pin is the intensity of the incident light and represents 100mW/cm2。
2. The solder tape adhesion was evaluated using solder tape used to prepare modules having a width of 1.2 mm. The solder ribbon was composed of a composition having a ratio of Pb/Sn of 60/40, and after a KESTOR 955 flux was applied to the surface of the solder ribbon, the solder ribbon was attached to the upper end of the bus bar of the prepared solar cell by soldering.
After dipping the solder strips cut to a length of 200mm in a KESTOR 955 flux solution for one minute, they are dried at 100 degrees for 10 minutes to be ready for use. The solder ribbon is attached to the solar cell using a SEMTEK SCB-130B hand soldering apparatus. Soldering was performed by placing a flux-coated solder ribbon on the upper end of the solar cell busbar and heating at 300 c for one minute.
The adhesion of the solder ribbon after the attachment was completed was measured using a DS2-20N device from IMADA. At this time, the angle of the solder ribbon and the solar cell is maintained at 180 degrees.
[ Table 2]
As shown in table 2, it can be seen that the solar cell prepared from the paste composition for a front electrode of a solar cell according to the example of the present invention reduces the series resistance between the electrode and the solar cell substrate as compared to the comparative example. Thus, it is understood that the open circuit voltage and fill factor characteristics are improved, and thus the solar cell has excellent energy conversion efficiency.
Further, as a result of confirmation of the adhesive force of the solder ribbon, it was confirmed that the examples of the present invention have stronger adhesive force than the comparative examples. This is because, in the case where the solder ribbon adhesion is weak, it is difficult to perform modularization of the solar cell, and thus it can be confirmed that the solar cell module of the paste composition according to the present invention has excellent stability.
As described above, the present invention has been described with respect to specific matters and limited examples, but this is provided only to facilitate a more complete understanding of the present invention, and the present invention is not limited to the examples described above, and those skilled in the art to which the present invention pertains can make various modifications and variations based on the description.
Therefore, the inventive concept is not limited to the described embodiments, but all matters modified within the scope of the appended claims, including equivalents and equivalents thereof, are also within the scope of the inventive concept.
Claims (8)
1. A paste composition for a front electrode of a solar cell, comprising:
a conductive metal powder;
glass powder of 49.3 to 59.3 wt.% of TeO210 to 20 wt% of PbO, 3 to 8 wt% of ZnO, 10.6 to 25 wt% of Bi2O33.7% by weight of Li2O, 2% by weight of SiO2And 2% by weight of B2O3Forming; and
an organic vehicle.
2. The paste composition for a front electrode of a solar cell according to claim 1, wherein the content of the glass frit is 0.1 to 15% by weight with respect to the paste composition.
3. The paste composition for a front electrode of a solar cell according to claim 1, wherein,
the conductive metal powder contains one or more selected from the group consisting of silver, gold, copper, nickel, aluminum, palladium, chromium, cobalt, tin, lead, zinc, iron, tungsten, magnesium, and alloys thereof.
4. The paste composition for a front electrode of a solar cell according to claim 1, wherein,
the content of the conductive metal powder is 60 to 99.5 wt% with respect to the paste composition.
5. The paste composition for a front electrode of a solar cell according to claim 1, wherein the content of the organic vehicle is 0.1 to 35% by weight with respect to the paste composition.
6. The paste composition for a front electrode of a solar cell according to claim 1, wherein the organic vehicle is formed by dissolving an organic binder in a solvent.
7. The paste composition for a front electrode of a solar cell according to claim 6,
the organic binder contains at least one selected from the group consisting of a cellulose resin, an acrylic resin, and a polyethylene resin.
8. A solar cell prepared by the paste composition for a front electrode of a solar cell according to any one of claims 1 to 7.
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| KR1020150139737A KR101693840B1 (en) | 2015-10-05 | 2015-10-05 | Paste composition for solar cell front electrode and solar cell using thereof |
| KR10-2015-0139737 | 2015-10-05 | ||
| PCT/KR2016/011133 WO2017061764A1 (en) | 2015-10-05 | 2016-10-05 | Paste composition for solar cell front electrode, and solar cell using same |
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| KR101961946B1 (en) * | 2017-07-17 | 2019-03-25 | 한화큐셀앤드첨단소재 주식회사 | Glass frit, paste for forming perc solar cell electrode comprising the same and perc solar cell electrode |
| KR101972384B1 (en) * | 2017-09-08 | 2019-08-19 | 대주전자재료 주식회사 | Paste composition of solar cell front electrode and manufacturing method thereof |
| KR20190073210A (en) * | 2017-12-18 | 2019-06-26 | 삼성에스디아이 주식회사 | Composition for forming solar cell electrode and electrode prepared using the same |
| CN108428492B (en) * | 2018-02-28 | 2020-01-14 | 洛阳师范学院 | Solar cell front electrode slurry |
| KR102220531B1 (en) | 2018-04-23 | 2021-02-24 | 삼성에스디아이 주식회사 | Composition for forming electrode, electrode manufactured using the same and solar cell |
| KR102655096B1 (en) * | 2019-04-26 | 2024-04-04 | 쌩-고벵 글래스 프랑스 | Coated article and method for manufacturing the same |
| CN110491545B (en) * | 2019-09-04 | 2021-05-18 | 南通天盛新能源股份有限公司 | N-type solar cell front surface fine grid slurry and preparation method thereof |
| KR102283727B1 (en) * | 2020-01-21 | 2021-08-02 | 박태호 | Glass frit and electrode paste composition for solar cell comprising the same |
| CN111403079B (en) * | 2020-03-30 | 2021-07-23 | 成都银盛新材料有限公司 | Conductive paste for back electrode of PERC crystalline silicon solar cell and preparation method thereof |
| CN114464690B (en) * | 2020-08-28 | 2023-02-07 | 晶科能源股份有限公司 | Solar cell grid line structure and photovoltaic module |
| CN113772959B (en) * | 2021-09-14 | 2023-05-02 | 黄山市晶特美新材料有限公司 | High-reflection low-temperature crystallized glass slurry for double-glass solar cell module and preparation method thereof |
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| CN103915127A (en) * | 2013-01-03 | 2014-07-09 | 上海匡宇电子技术有限公司 | Front silver paste for high sheet resistance silicon-based solar cell and preparing method of front silver paste |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017061764A1 (en) | 2017-04-13 |
| CN108431964A (en) | 2018-08-21 |
| TWI621600B (en) | 2018-04-21 |
| KR101693840B1 (en) | 2017-01-09 |
| TW201718424A (en) | 2017-06-01 |
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