CN108431964A - Paste compound for front electrode of solar battery and the solar cell using the paste compound - Google Patents
Paste compound for front electrode of solar battery and the solar cell using the paste compound Download PDFInfo
- Publication number
- CN108431964A CN108431964A CN201680058386.9A CN201680058386A CN108431964A CN 108431964 A CN108431964 A CN 108431964A CN 201680058386 A CN201680058386 A CN 201680058386A CN 108431964 A CN108431964 A CN 108431964A
- Authority
- CN
- China
- Prior art keywords
- weight
- paste compound
- front electrode
- solar battery
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 62
- 239000000843 powder Substances 0.000 claims description 59
- 239000011521 glass Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000011230 binding agent Substances 0.000 claims description 9
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 239000011133 lead Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 24
- 239000010410 layer Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 238000003466 welding Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 10
- 238000007639 printing Methods 0.000 description 10
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229920002678 cellulose Polymers 0.000 description 4
- 235000013339 cereals Nutrition 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 238000010406 interfacial reaction Methods 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- OMVSWZDEEGIJJI-UHFFFAOYSA-N 2,2,4-Trimethyl-1,3-pentadienol diisobutyrate Chemical compound CC(C)C(=O)OC(C(C)C)C(C)(C)COC(=O)C(C)C OMVSWZDEEGIJJI-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- XJMMNTGIMDZPMU-UHFFFAOYSA-N 3-methylglutaric acid Chemical compound OC(=O)CC(C)CC(O)=O XJMMNTGIMDZPMU-UHFFFAOYSA-N 0.000 description 2
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- JYELWBARXZUASV-UHFFFAOYSA-N 1-(2-methylpropanoyloxy)pentyl 2-methylpropanoate Chemical compound CCCCC(OC(=O)C(C)C)OC(=O)C(C)C JYELWBARXZUASV-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 150000002085 enols Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- DBLVXHJTZIDGHE-UHFFFAOYSA-N ethyl acetate;2-(2-hydroxyethoxy)ethanol Chemical compound CCOC(C)=O.OCCOCCO DBLVXHJTZIDGHE-UHFFFAOYSA-N 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000011297 pine tar Substances 0.000 description 1
- 229940068124 pine tar Drugs 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Abstract
The present invention relates to a kind of paste compound for front electrode of solar battery and the solar cells formed using the paste compound.Paste compound according to the present invention for front electrode of solar battery can be used for preparing the front electrode of solar cell, have the advantages that because oxidation lead content is few and environmentally friendly.In addition, paste compound according to the present invention for front electrode of solar battery not only has excellent etch capabilities, and its contact resistance between antireflection film is also low, therefore there is high-energy conversion efficiency using the solar cell of the front electrode used for solar batteries formed by the paste compound.
Description
Technical field
The present invention relates to a kind of paste compound for front electrode of solar battery and using the paste compound come
The solar cell of formation.
Background technology
Solar cell (solar cell) is the semiconductor element for converting solar energy into electric energy, by semiconductor wafer,
Antireflection film, front electrode and backplate are constituted.Solar cell induced semiconductor chip by incident sunlight
P-N junction photoelectricity effect, and resulting electronics is provided via the electric current outside electrode flow direction.
Wherein, front electrode is formed by coating metal slurry in the one side in chip.Pass through common silk-screen printing
Method etc. is coated with the paste compound comprising metal or glass powder etc. to form the telegraph circuit of specific shape on substrate, and
And be dried and be sintered, to assign electric conductivity.
Especially since front electrode is located at the topmost of solar cell, it is therefore desirable to be lost making shading
(shading loss) increases conductivity while minimum, is developed with excellent adhesion strength and relatively low so always existing
Contact resistance behavior metal paste demand.Wherein, to the glass powder (Glass of the important composition as metal paste
Frit research) is especially active.
Glass powder etches antireflection film by interfacial reaction occurs with antireflection film, which is oxidationreduction
Reaction, by-product is generated because Partial Elements are reduced.Since lead oxide (PbO) content of existing glass powder is higher,
After interfacial reaction, lead can be reduced, thus in terms of there is environment.
Therefore, however it remains for not only environmental protection but also be capable of providing superior transfer efficiency and resistance characteristic compared with existing
The slurry for front electrode of solar battery demand.
Invention content
Technical problem
The present invention is as described above in order to solve the problems, such as, it is desirable to provide a kind of front electrode of solar battery that is used to form
Paste compound, which reduces the content of lead oxide, and has excellent transfer efficiency.
In addition, the present invention is intended to provide a kind of solar cell, utilizes the present invention's to be used for solar battery front side electricity
It is prepared by the paste compound of pole.
Technical solution
The present invention relates to a kind of efficient paste compounds for front electrode of solar battery, and of the invention is used for
The paste compound of front electrode of solar battery includes：
Conductive metal powder；
Glass powder includes the TeO of 20 to 60 weight %2, the PbO of 1 to 30 weight %, 1 to 20 weight % ZnO and 1 to
The Bi of 30 weight %2O3；And
Organic carrier.
The glass powder of the present invention can further include selected from by SiO2、ZnO、Li2O、B2O3、Al2O3、CuO、Na2O、
ZrO2、MgO、P2O5、CaO、BaO、SnO、SrO、K2O、TiO2And MnO2One or more of group of composition.
The glass powder of the present invention may include the TeO of 20 to 60 weight %2, the PbO of 1 to 30 weight %, 1 to 20 weight %
The Bi of ZnO, 1 to 30 weight %2O3, 0.1 to 5 weight % Li2O, the SiO of 0.1 to 15 weight %2And 0.1 to 10 weight %
B2O3。
Relative to paste compound, the content of glass powder of the invention can be 0.1 to 15 weight %.
The present invention conductive metal powder may include selected from silver, gold, copper, nickel, aluminium, palladium, chromium, cobalt, tin, lead, zinc, iron,
One or more of tungsten, magnesium and their alloy.Relative to paste compound, the content of the conductive metal powder can be
60 to 99.5 weight %.
The organic carrier of the present invention is formed by dissolving organic binder in a solvent, relative to paste compound,
The content of the organic carrier can be 0.1 to 35 weight %.The organic binder may include selected from cellulosic resin, third
One or more of olefin(e) acid resinoid and polythylene resin.
The present invention can provide a kind of sun for utilizing the paste compound for front electrode of solar battery to prepare
It can battery front side electrode and the solar cell comprising the front electrode.
Invention effect
Paste compound according to the present invention for front electrode of solar battery can be used for preparing solar-electricity
The front electrode in pond, and have the advantages that because the content of lead oxide is low and environmentally friendly.
Paste compound according to the present invention for front electrode of solar battery not only has excellent etching energy
Power, and its contact resistance between antireflection film is also low, therefore using the solar cell formed by the paste compound
There is high-energy conversion efficiency with the solar cell of front electrode.
Specific implementation mode
In the following, the paste compound for front electrode of solar battery of the present invention is described in detail.At this point, such as
Fruit is to used technical term and scientific and technical terminology without other definition, then used technical term and scientific and technical terminology have this
The normally understood meaning of technical staff of technical field that the present invention belongs to, and save and slightly have in following explanations and appended attached drawing
The explanation of the unclear known function of main points of the present invention and structure may be undesirably resulted in.
In the present invention, solar cell (solar cell) refers to the semiconductor element for converting solar energy into electric energy,
Solar cell is made of semiconductor wafer, antireflection film, front electrode and backplate.
The present invention relates to a kind of paste compounds for front electrode of solar battery, including：
Conductive metal powder；
Glass powder includes the TeO of 20 to 60 weight %2, the PbO of 1 to 30 weight %, 1 to 20 weight % ZnO and 1 to
The Bi of 30 weight %2O3；And
Organic carrier.
Glass powder included in the paste compound for front electrode of the present invention can induce following effect：It is burning
Antireflection film is etched in knot technique, and improves the adhesion strength between conductive metal powder and chip and further decreases sintering
Temperature.
The glass powder etches antireflection film by interfacial reaction occurs with antireflection film, which is oxidation-
Reduction reaction generates by-product because Partial Elements are reduced.Since lead oxide (PbO) content of existing glass powder is higher,
Therefore after interfacial reaction, lead can be reduced, thus in terms of there is environment.
The paste compound for front electrode of the invention is by reducing the oxidation lead content used and carrying in the past as a result,
High ZnO and Bi2O3Content, to introduce the environmentally friendly and excellent etch capabilities paste compound for front electrode.
In addition, the paste compound for front electrode of the present invention can be by containing TeO2, improve substrate and front
Etch capabilities are further increased while adhesion strength between electrode, and are reduced between the paste compound and antireflection film
Contact resistance is to improve open-circuit voltage.
In order to improve the luminous efficiency of solar cell, relative to glass powder total content, glass powder of the invention may include
The TeO of 20 to 60 weight %2, the PbO of 1 to 30 weight %, 1 to 20 weight % the weight of ZnO and 1 to 30 % Bi2O3, but simultaneously
It is without being limited thereto.
In order to improve driving voltage effect, the glass powder of the invention can further include selected from by SiO2、ZnO、
Li2O、B2O3、Al2O3、CuO、Na2O、ZrO2、MgO、P2O5、CaO、BaO、SnO、SrO、K2O、TiO2And MnO2In the group of composition
More than one, more preferably can further include Li2O、SiO2And B2O3。
The driving voltage minimum energy required when referring to provide by making atom or molecular collision come into row energization
It measures and necessary voltage, the effect for improving solar battery efficiency is presented.
The Li2O、SiO2And B2O3Content is not limited, and preferably may include the Li of 0.1 to 5 weight %2O, 0.1 to 15 weight
Measure the SiO of %2And 0.1 to 10 weight % B2O3, glass powder of the invention preferably may include the TeO of 20 to 60 weight %2, 1 to
The Bi of the PbO of 30 weight %, the ZnO of 1 to 20 weight %, 1 to 30 weight %2O3, 0.1 to 5 weight % Li2O, 0.1 to 15 weight
Measure the SiO of %2And 0.1 to 10 weight % B2O3。
The glass powder of the present invention can be made of the oxygen polyhedron for wrapping oxygen containing reticular structure (network structure),
Specifically, by having the oxygen polyhedron of irregular reticular structure (random network structure) to constitute.Glass powder
Softening point can be 300 to 500 DEG C, due to glass melting object within the above range have viscosity appropriate and suitably form electricity
Pole, but it is not limited to this.
The glass powder of the present invention has excellent transfer efficiency, and resistance rises in order to prevent and weldability reduces, relative to
The content of paste compound, glass powder can be 0.1 to 15 weight %, and but it is not limited to this.
Usual way can be used to prepare in the glass powder.For example, the glass can be added in mentioned component ratio
Powder, and make under conditions of 900 to 1300 DEG C rapid cooling (quenching) after the glass powder.It can be by using ball
Grinding machine (ball mill), disc flour mill (disk mill) or planetary mill (planetary mill) etc. are crushed through mixed
The composition of conjunction, to obtain glass powder.
The average grain diameter D50 of glass powder can be 0.1 to 5 μm, preferably 0.5 to 3 μm, and but it is not limited to this.
The metal that the conductive metal powder of the present invention generally uses when can be the electrode for preparing solar cell
Powder, such as may include in silver, gold, copper, nickel, aluminium, palladium, chromium, cobalt, tin, lead, zinc, iron, tungsten, magnesium and their alloy
More than one, preferably can be to have excellent conductivity and form stronger interface with the crystalloid inorganic semiconductor of silicon etc.
Cohesive silver (Ag).
The purity of conductive metal powder (preferably silver powder) is 80% or more, it is preferable to use the silver that purity is 95% or more
Powder then and is not particularly limited but as long as being the purity for meeting the condition usually required that as electrode.
As long as the present invention technical field in well known shape, then conductive metal powder can use and not by spy
It does not limit.For example, spherical, thin slice (flake) shape or combination thereof can be used, but it is not limited to this.
In addition, can be by the influence etc. of the sintering velocity needed for considering and the technique for forming electrode, by conductive metal powder
The particle size adjustment at end is range appropriate.In the present invention, in order to present reduce contact resistance effect, the conductive metal
The average grain diameter of powder can be with about 0.1 to 0.5 μm of size, and but it is not limited to this.
In the paste compound for front electrode of solar battery of the present invention, in order to enable conductive metal powder
The viscosity of slurry will not be caused to reduce or phase separation, in terms of cost-effective from the point of view of, may include leading for 60 to 99.5 weight %
Conductive metal powder preferably comprises the conductive metal powder of 70 to 99.5 weight %, more preferably includes 80 to 99.5 weight %
Conductive metal powder.
The paste compound for front electrode of solar battery of the present invention may include organic carrier, the organic carrier
Play the dispersant effect of the effect and solid phase particles that adjust viscosity.Organic carrier can be that organic bond is dissolved in solvent
Obtained by binder solution.
As long as the usually used organic binder of the organic binder of the present invention is then harmless, may include being selected from cellulose family
One or more of resin, acrylic resin and polythylene resin.
As concrete example, organic bond may include selected from methylcellulose, ethyl cellulose, carboxymethyl cellulose, nitre
Cellulose, hydroxylated cellulose, ethylhydroxyethylcellulose, polymethacrylates, acrylate, butyl acrylate, poly- second
The substance of one or more of enol, polyvinylpyrrolidone and polyvinyl butyral etc..
The solvent of the organic carrier can be the organic solvent for dissolving organic binder, can be choosing as concrete example
From pine tar, diethylene glycol mono-ethyl acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, ethylene glycol only son
Ether, ethylene glycol monomethyl ether acetate, terpinol, methylglutaric acid, phthalic acid two (2- ethylhexyls) ester, phthalic acid
The solvent of one or more of diethylester, diisononyl adipic acid and dibasic ester etc..
Relative to organic carrier, the content of the organic bond contained in organic carrier of the invention can be 10 to 30 weights
% is measured, but not limited to this.
In order to be easy dispersed electro-conductive metal powder and maintain the high efficiency of solar cell, relative to for solar-electricity
The paste compound of pond front electrode, the content of organic carrier of the invention are more excellent preferably in the range of 0.1 to 35 weight %
It is selected in the range of 10 to 25 weight %, but it is not limited to this.
Can be as needed, the paste compound for front electrode of solar battery of the invention further contains usually
The additive known.As the example of additive, it may include selected from tackifier, shake change agent, stabilizer, dispersant, thixotropic agent, levelling agent
And the substance of one or more of antifoaming agent etc..Relative to paste compound, additive level can be about 0.1 to 10 weight
% is measured, but can determine addition according to the characteristic for the paste compound for front electrode of solar battery finally to be obtained
Agent content.
In addition, the present invention can provide a kind of front electrode of solar battery formed using the paste compound.
The paste compound can be by being printed in wafer substrate and being dried and burn by the front electrode of the present invention
The technique of knot is formed.Printing process can utilize silk-screen printing, intaglio printing, hectographic printing, roll-to-roll printing, aerosol to print
Or ink jet printing etc., but it is not particularly limited to this printing process.
In addition, the present invention can provide a kind of solar cells including the front electrode of solar battery.The present invention's
Solar cell can provide excellent transfer efficiency and resistance characteristic, to greatly improve the generating efficiency of solar cell.
Solar cell involved by one embodiment of the invention is as described below.
The solar cell includes：First semiconductor layer；Second semiconductor layer is formed in the upper of first semiconductor layer
Portion；Antireflection film is formed in the top of second semiconductor layer；Front electrode penetrates through the antireflection film and with the second half
Conductor layer connects；And backplate, it is formed in the back side of semiconductor layer.
The semiconductor substance used in semiconductor layer can be specifically crystalloid silicon, such as silicon wafer can be used.It is described
A layer in first semiconductor layer and second semiconductor layer can be the semiconductor layer doped with n-type impurity, another
Layer can be the semiconductor layer doped with p-type impurity.It can be doped with triels (B, Ga or In etc.), in N in n-type impurity
It can be doped with pentels (P, As or Sb etc.) in type impurity.
It is formed with P-N junction on interface between semiconductor layer, which is to be produced by photovoltaic effect by sunlight
The part of raw electric current.The electrons and holes caused by photovoltaic effect are respectively attracted to P layers and N layers, to respectively to under
The electrode movement of portion and upper bond, and the electricity generated herein can be utilized by applying load to electrode.
It can be formed with antireflection film on the top of second semiconductor layer.The antireflection film reduces the be incident on sun
The reflectivity of sunlight on the front of energy battery.If the reflectivity of sunlight is reduced, it can make the light quantity for reaching P-N junction
Increase, so as to increase the short circuit current of solar cell and improve the transfer efficiency of solar cell.
The antireflection film can be made of the less light of absorption and the substance with insulating properties, such as can be silicon nitride
(SiNx), silica (SiO2), titanium oxide (TiO2), aluminium oxide (Al2O3), magnesia (MgO), cerium oxide (CeO2) and they
Combination, the antireflection film can be formed single-layer or multi-layer.
It can be formed with front electrode on the top of the antireflection film, back side electricity can be formed at the back side of semiconductor layer
Pole.The electrode can be by that will include that the paste compound printing of conductive metal powder executes heat later on the semiconductor wafer
It handles and is formed.
A part for the antireflection film can also be removed by being chemically treated.Can by CVD (chemical vapor deposition),
PECVD (plasma enhanced chemical vapor deposition), sputtering or other methods deposit the antireflection film.By removing counnter attack
A part for film is penetrated, the electrical contact between semiconductor substrate and the electric conductor of paste compound can be improved.Paste compound can
To be printed as pattern on antireflection film, such as it is printed as the busbar (bus bar) with connecting line.Printing can pass through silk
Wire mark brush, coating, extruding, ink-jet, forming or multiple printing (shaped or multiple printing) or welding
(ribbon) it realizes.
In electrode formation process, conductive metal powder can be sintered by heating paste compound.It typically, can be with
Sintering temperature is set to burn up the organic substance in paste compound but also can be burnt up existing arbitrary
Other organic substances.In one embodiment, sintering temperature can be 750 to 950 DEG C.
In the following, the present invention is described in more detail by embodiment.But following embodiments are only intended to reference to detailed
Describe the bright present invention in detail, the present invention is not limited thereto.
[embodiment 1 to 6]
1. preparing glass powder
After with the ingredient recorded in ratio (weight %) mixture table 1 as shown in table 1 below, it is allowed to molten at 1100 DEG C
Change 30 minutes, then utilizes pure water (H2O (Quenching)) is quenched with rapid cooling.Utilize grinder (Attrition-
Mill) the glass melting object through rapid cooling is crushed, to prepare the glass powder with 1.5 μm of average grain diameter.
The ingredient and content of glass powder corresponding with each embodiment are shown in such as the following table 1.
2. preparing paste compound
Paste compound is prepared by using the glass powder of above-mentioned preparation respectively.90 weights are used as electroconductive powder
Measure the silver powder with 2 μm of average grain diameter of %.Use the glass powder of 2 weight %.1 weight is used respectively as organic binder
Measure the ethyl cellulose resin (AQUALON company ECN) of the cellulose esters (EASTMAN company CBA) and 1 weight % of %.
As organic solvent, TXIB (the Trimethyl Pentanyl Diisobutyrate (front threes of 2 weight % are used
Base pentanediol diisobutyrate)), dibasic ester (dimethyl adipate/penta 2 of Dibasic ester, TCI companies of 3 weight %
Dimethyl phthalate/dimethyl succinate (Dimethyl adipate/dimethyl glutarate/dimethyl succinate)
Mixture) or 1 weight % BC (BUTYL CARBITOL (butyl carbitol)).
3. preparing solar cell
When preparing solar cell, using the silicon single crystal wafer of 156mm 810 in tube furnace (tube furnace)
By using POCl at DEG C3Diffusion technique adulterate phosphorus (P), to form the semiconductor layer with 90 Ω/sq sheet resistances, and
And by chemical vapour deposition technique (PECVD methods) and use precursor SiH4And NH3It is deposited with shape on the semiconductor layer
At the silicon nitride film of the thickness with 70nm, to form antireflection film.
As for backplate, to replace the above-mentioned electrode slurry composition of silver powder, pass through silk screen using comprising aluminium powder
It is 60 seconds dry in 250 DEG C of drying oven after print process is overleaf coated with 30 μ m thicks.As for front electrode, profit
With the paste compound prepared in the embodiment of the present invention and comparative example, it is coated with 20 μ m thicks by silk screen print method,
Then 60 seconds dry in 200 DEG C of drying oven.Pass through the solar cell to completing printing in 820 DEG C of belt sintering stove
One minute sintering process is carried out, to prepare solar cell.By the evaluating characteristics result of the solar cell of preparation be shown in as
In the following table 2.
[comparative example 1 to 3]
In addition to the ingredient difference of the glass powder of such as the following table 1, the sun is prepared using method and condition same as Example 1
It can battery.The evaluating characteristics result of the solar cell of preparation is shown in as in the following table 2.
[table 1]
[evaluating characteristics]
1. prepare solar cell so that its be printed/sinter into tool there are three bus structure, with 50 μm of grid lines
(finger line) is wide and is 105 patterns with grid line number, and carries out evaluating characteristics.Measure prepared solar energy
The electro-optical characteristic of battery, and using rated power Oriel 1000W solar simulators in 100mW/cm2(AM 1.5G's)
Illumination is lower to measure Current density-voltage (J-V) characteristic.Measured value is expressed as energy conversion efficiency by following mathematical expressions 1
(%).The transfer efficiency refers to the ratio of luminous energy incident on the output power and per unit area of solar cell.
Series impedance is calculated after the J-V characteristics for measuring simulator, is used to understand close related between FF
System.
[mathematical expression 1]
Energy conversion efficiency (%)=FF × (Jsc × Voc)/Pin
Voc indicates that open-circuit voltage (open circuit voltage, V), Jsc indicate light short-circuit current density (short
Circuit current, mA/cm2), FF indicates that fill factor (Fill factor, %), Pin are incident intensity and expression
100mW/cm2。
2. evaluating welding adhesion strength using width is used to prepare for the welding of the module of 1.2mm.Constitute the ingredient of welding
Ratio with Pb/Sn=60/40, it is by welding that welding is attached after 955 fluxing agents of KESTOR are coated onto welding surface
The busbar upper end of prepared solar cell.
Continue in the welding for being cut into 200mm length to be immersed in 955 fluxing agent solutions of KESTOR one minute it
Afterwards, 10 minutes are dried under 100 degree with spare.It is using the SCB-130B manual welding equipment of SEMTEK companies that the welding is attached
It on the solar cell.By making the welding for being coated with fluxing agent be located at the upper end of solar cell busbar and adding at 300 DEG C
One minute mode of heat is welded.
The adhesive force of the welding after attachment is measured using the DS2-20N equipment of IMADA companies.At this point, welding with
The angle of solar cell maintains 180 degree.
[table 2]
As shown in table 2, it is known that by the paste compound according to the ... of the embodiment of the present invention for front electrode of solar battery
The solar cell of preparation reduces the series resistance between electrode and day sun energy cell substrates compared with comparative example.Known to as a result,
Open-circuit voltage and fill factor characteristic are improved, therefore have excellent solar cell energy conversion efficiency.
In addition, the confirmation as welding adhesion strength is as a result, can confirm that the embodiment of the present invention has more compared with comparative example
Strong adhesion strength.This is because in the case where welding adhesive force is weaker, it is difficult to carry out the modularization of solar cell, therefore
It can confirm that the solar cell module of paste compound according to the present invention has excellent stability.
It is such as above-mentioned, it is illustrated in the present invention by specific item and limited embodiment, but this is only
Contribute to being more fully understood and providing for the present invention, the present invention is not limited by above-described embodiment, technology belonging to the present invention
The technical staff in field can be based on these records and carry out a variety of modification and deformation.
Therefore, design of the invention is not limited to embodiment described to define, in addition to scope of the appended claims
Except, all the elements through the deformation impartial or of equal value with the right also belong in the scope of present inventive concept.
Claims (10)
1. a kind of paste compound for front electrode of solar battery, including：
Conductive metal powder；
Glass powder includes TeOs of the 20 weight % to 60 weight %2, 1 weight % to 30 weight % PbO, 1 weight % to 20 weights
Measure the Bi of the ZnO and 1 weight % to 30 weight % of %2O3；And
Organic carrier.
2. the paste compound according to claim 1 for front electrode of solar battery, wherein
The glass powder is further included selected from by SiO2、ZnO、Li2O、B2O3、Al2O3、CuO、Na2O、ZrO2、MgO、P2O5、
CaO、BaO、SnO、SrO、K2O、TiO2And MnO2One or more of group of composition.
3. the paste compound according to claim 2 for front electrode of solar battery, wherein
The glass powder includes the TeO of 20 weight % to 60 weight %2, 1 weight % to 30 weight % PbO, 1 weight % to 20
The Bi of the ZnO of weight %, 1 weight % to 30 weight %2O3, 0.1 weight % to 5 weight % Li2O, 0.1 weight % to 15 weights
Measure the SiO of %2And 0.1 weight % to 10 weight % B2O3。
4. the paste compound according to claim 1 for front electrode of solar battery, wherein
Relative to the paste compound, the content of the glass powder is 0.1 weight % to 15 weight %.
5. the paste compound according to claim 1 for front electrode of solar battery, wherein
The conductive metal powder may include selected from silver, gold, copper, nickel, aluminium, palladium, chromium, cobalt, tin, lead, zinc, iron, tungsten, magnesium and it
One or more of alloy.
6. the paste compound according to claim 1 for front electrode of solar battery, wherein
Relative to the paste compound, the content of the conductive metal powder is 60 weight % to 99.5 weight %.
7. the paste compound according to claim 1 for front electrode of solar battery, wherein
Relative to the paste compound, the content of the organic carrier is 0.1 weight % to 35 weight %.
8. the paste compound according to claim 1 for front electrode of solar battery, wherein
The organic carrier is formed by dissolving organic binder in a solvent.
9. the paste compound according to claim 8 for front electrode of solar battery, wherein
The organic binder include in cellulosic resin, acrylic resin and polythylene resin it is a kind of with
On.
10. a kind of solar cell, by being used for front electrode of solar battery described in any one of claim 1 to 9
Paste compound prepare the solar cell.
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| KR1020150139737A KR101693840B1 (en) | 2015-10-05 | 2015-10-05 | Paste composition for solar cell front electrode and solar cell using thereof |
| KR10-2015-0139737 | 2015-10-05 | ||
| PCT/KR2016/011133 WO2017061764A1 (en) | 2015-10-05 | 2016-10-05 | Paste composition for solar cell front electrode, and solar cell using same |
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| CN108431964B CN108431964B (en) | 2022-07-08 |
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| KR (1) | KR101693840B1 (en) |
| CN (1) | CN108431964B (en) |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111403079A (en) * | 2020-03-30 | 2020-07-10 | 成都银盛新材料有限公司 | Conductive paste for back electrode of PERC crystalline silicon solar cell and preparation method thereof |
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| CN113772959A (en) * | 2021-09-14 | 2021-12-10 | 黄山市晶特美新材料有限公司 | High-reflection low-temperature crystallized glass slurry for double-glass solar cell module and preparation method thereof |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101961946B1 (en) * | 2017-07-17 | 2019-03-25 | 한화큐셀앤드첨단소재 주식회사 | Glass frit, paste for forming perc solar cell electrode comprising the same and perc solar cell electrode |
| KR101972384B1 (en) * | 2017-09-08 | 2019-08-19 | 대주전자재료 주식회사 | Paste composition of solar cell front electrode and manufacturing method thereof |
| KR20190073210A (en) * | 2017-12-18 | 2019-06-26 | 삼성에스디아이 주식회사 | Composition for forming solar cell electrode and electrode prepared using the same |
| CN108428492B (en) * | 2018-02-28 | 2020-01-14 | 洛阳师范学院 | Solar cell front electrode slurry |
| KR102220531B1 (en) | 2018-04-23 | 2021-02-24 | 삼성에스디아이 주식회사 | Composition for forming electrode, electrode manufactured using the same and solar cell |
| KR102655096B1 (en) * | 2019-04-26 | 2024-04-04 | 쌩-고벵 글래스 프랑스 | Coated article and method for manufacturing the same |
| CN110491545B (en) * | 2019-09-04 | 2021-05-18 | 南通天盛新能源股份有限公司 | N-type solar cell front surface fine grid slurry and preparation method thereof |
| KR102283727B1 (en) * | 2020-01-21 | 2021-08-02 | 박태호 | Glass frit and electrode paste composition for solar cell comprising the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1483009A (en) * | 2001-11-05 | 2004-03-17 | 旭硝子株式会社 | Glass ceramic composition |
| US20060276322A1 (en) * | 2005-04-04 | 2006-12-07 | Matsushita Electric Industrial Co., Ltd. | Glass composition for covering electrodes and glass paste containing the same |
| CN103811098A (en) * | 2012-11-12 | 2014-05-21 | 第一毛织株式会社 | Electrode paste for solar cell and electrode prepared thereof |
| CN103915127A (en) * | 2013-01-03 | 2014-07-09 | 上海匡宇电子技术有限公司 | Front silver paste for high sheet resistance silicon-based solar cell and preparing method of front silver paste |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7736546B2 (en) * | 2008-01-30 | 2010-06-15 | Basf Se | Glass frits |
| JP5414409B2 (en) * | 2009-01-16 | 2014-02-12 | 日立粉末冶金株式会社 | Low melting glass composition, low-temperature sealing material and electronic component using the same |
| KR20110064074A (en) * | 2009-12-07 | 2011-06-15 | 동우 화인켐 주식회사 | New glass frit, the glass frit paste composition for sealing an electric device, and sealing method of an electric device using the same |
| KR101683882B1 (en) | 2009-12-24 | 2016-12-21 | 엘지이노텍 주식회사 | Paste composition for front electrode of high-efficiency silicon solar cell and Silicon solar cell comprising the same |
| JP4868079B1 (en) * | 2010-01-25 | 2012-02-01 | 日立化成工業株式会社 | N-type diffusion layer forming composition, n-type diffusion layer manufacturing method, and solar cell manufacturing method |
| WO2011140197A1 (en) * | 2010-05-04 | 2011-11-10 | E. I. Du Pont De Nemours And Company | Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices |
| KR20130064659A (en) * | 2011-12-08 | 2013-06-18 | 제일모직주식회사 | Electrode paste composition for solar cell and electrode prepared using the same |
| KR101566071B1 (en) * | 2013-03-27 | 2015-11-04 | 제일모직주식회사 | Composition for forming solar cell electrode and electrode prepared using the same |
| EP2913139B1 (en) * | 2014-02-26 | 2019-04-03 | Heraeus Precious Metals North America Conshohocken LLC | A glass comprising molybdenum and lead in a solar cell paste |
-
2015
- 2015-10-05 KR KR1020150139737A patent/KR101693840B1/en active IP Right Grant
-
2016
- 2016-10-05 WO PCT/KR2016/011133 patent/WO2017061764A1/en active Application Filing
- 2016-10-05 TW TW105132264A patent/TWI621600B/en active
- 2016-10-05 CN CN201680058386.9A patent/CN108431964B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1483009A (en) * | 2001-11-05 | 2004-03-17 | 旭硝子株式会社 | Glass ceramic composition |
| US20060276322A1 (en) * | 2005-04-04 | 2006-12-07 | Matsushita Electric Industrial Co., Ltd. | Glass composition for covering electrodes and glass paste containing the same |
| CN103811098A (en) * | 2012-11-12 | 2014-05-21 | 第一毛织株式会社 | Electrode paste for solar cell and electrode prepared thereof |
| CN103915127A (en) * | 2013-01-03 | 2014-07-09 | 上海匡宇电子技术有限公司 | Front silver paste for high sheet resistance silicon-based solar cell and preparing method of front silver paste |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403079A (en) * | 2020-03-30 | 2020-07-10 | 成都银盛新材料有限公司 | Conductive paste for back electrode of PERC crystalline silicon solar cell and preparation method thereof |
| CN112002772A (en) * | 2020-08-28 | 2020-11-27 | 晶科能源有限公司 | Solar cell grid line structure and photovoltaic module |
| CN114464690A (en) * | 2020-08-28 | 2022-05-10 | 晶科能源股份有限公司 | Solar cell grid line structure and photovoltaic module |
| CN113772959A (en) * | 2021-09-14 | 2021-12-10 | 黄山市晶特美新材料有限公司 | High-reflection low-temperature crystallized glass slurry for double-glass solar cell module and preparation method thereof |
| CN113772959B (en) * | 2021-09-14 | 2023-05-02 | 黄山市晶特美新材料有限公司 | High-reflection low-temperature crystallized glass slurry for double-glass solar cell module and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201718424A (en) | 2017-06-01 |
| WO2017061764A1 (en) | 2017-04-13 |
| KR101693840B1 (en) | 2017-01-09 |
| TWI621600B (en) | 2018-04-21 |
| CN108431964B (en) | 2022-07-08 |
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