CN107341535A - 一种抗刮痕全息存储卡 - Google Patents

一种抗刮痕全息存储卡 Download PDF

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CN107341535A
CN107341535A CN201710427477.1A CN201710427477A CN107341535A CN 107341535 A CN107341535 A CN 107341535A CN 201710427477 A CN201710427477 A CN 201710427477A CN 107341535 A CN107341535 A CN 107341535A
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何永兴
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Taicang Wisdom Technology Co Ltd
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Abstract

本发明公开了一种抗刮痕全息存储卡，包括：第一基片层、粘结胶层和第二基片层；所述粘结胶层粘附在所述第一基片层和第二基片层之间；所述第一基片层和粘结胶层相接的一面上涂覆固化有光致聚合物层。本发明一种抗刮痕全息存储卡，通过光致聚合物和粘结胶层的选择和设计，有效提高了全息存储卡的光学性能和物理性能，其优异的宽温抗刮伤性能有效提高了全息存储卡的应用领域，综合性能优异。

Description

一种抗刮痕全息存储卡
技术领域
本发明涉及存储介质领域，特别是涉及一种抗刮痕全息存储卡。
背景技术
全息存储技术因其采用以一页一页的形式进行光记录和读取，在容量和速度方面有着巨大的潜力，一直是高密度电子信息存储最有力的竞争者。目前，全息存储材料涉及卤化银敏化明胶、重铬酸盐明胶、高分子光致聚合物等，高分子光致聚合物具有高的衍射效率、高的灵敏度、大的动态范围以及易于合成、成本低廉、化学组成范围宽、能大规模生产，广泛应用于全息干涉、全息衍射、全息扫描、光学图像复用、全息防伪、全息光学器件等领域。
但现有的全息存储卡制备复杂，结构强度低，表面易刮伤，使用寿命较短。
发明内容
本发明主要解决的技术问题是提供一种抗刮痕全息存储卡。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种抗刮痕全息存储卡，包括：第一基片层、粘结胶层和第二基片层；所述粘结胶层粘附在所述第一基片层和第二基片层之间；所述第一基片层和粘结胶层相接的一面上涂覆固化有光致聚合物层；所述粘结胶层和第二基片层的尺寸大于所述第一基片层的尺寸。
在本发明一个较佳实施例中，所述第一基片层和第二基片层为聚碳酸酯层。
在本发明一个较佳实施例中，所述第一基片层和第二基片层为光学玻璃层，所述光学玻璃层上涂覆固化所述光致聚合物的一面上还涂覆有一层聚碳酸酯。
在本发明一个较佳实施例中，所述光致聚合物层为环氧树脂光致聚合物膜。
在本发明一个较佳实施例中，所述环氧树脂光致聚合物膜的制备方法包括如下步骤：
（1）称取原料：按重量份称取双酚A二缩水甘油醚60～80份、五乙烯六胺20～30份、苯基甲基丙烯酸酯30～35份、引发剂0.1～0.5份、纳米二氧化硅5～10份；
（2）原料混合：在常温条件下，将步骤（1）中称取的双酚A二缩水甘油醚、五乙烯六胺和纳米二氧化硅加入搅拌反应器中搅拌混合均匀，然后再加入称好的苯基甲基丙烯酸酯和引发剂，接续搅拌混合至均匀；
（3）超声分散：将步骤（2）中混合均匀的原料置于超声仪中，室温下超声分散15～20min，得到聚合物溶液；
（4）涂膜：将步骤（3）中超声分散后的聚合物溶液在基片上涂敷成一定厚度；
（5）真空干燥：将步骤（4）中涂覆后的基片置于真空干燥箱中，在一定条件下干燥固化，得到所述环氧树脂光致聚合物膜。
在本发明一个较佳实施例中，所述步骤（4）中，所述厚度为180～220nm；所述步骤（5）中，所述真空干燥的条件为：真空度0.003～0.005 MPa、40～60℃，时间20~40h。
本发明的有益效果是：本发明一种抗刮痕全息存储卡，通过光致聚合物和粘结胶层的选择和设计，有效提高了全息存储卡的光学性能和物理性能，其优异的宽温抗刮伤性能有效提高了全息存储卡的应用领域，综合性能优异。
附图说明
图1是本发明一种抗刮痕全息存储卡一较佳实施例的立体结构示意图；
附图中各部件的标记如下：1.第一基片层，2.粘结胶层，3.第二基片层，4.光致聚合物层。
具体实施方式
下面结合附图对本发明的较佳实施例进行详细阐述，以使本发明的优点和特征能更易于被本领域技术人员理解，从而对本发明的保护范围做出更为清楚明确的界定。
请参阅图1，本发明实施例包括：
实施例1
一种抗刮痕全息存储卡，包括：第一基片层1、粘结胶层2和第二基片层3；所述粘结胶层2粘附在所述第一基片层1和第二基片层3之间；所述第一基片层1和粘结胶层2相接的一面上涂覆固化有光致聚合物层4；所述粘结胶层和第二基片层的尺寸大于所述第一基片层的尺寸。
其中，所述第一基片层1和第二基片层3为聚碳酸酯层，厚度为2mm。
所述粘结胶层为乙烯-醋酸乙烯共聚物（EVA），厚度为0.35mm。
所述光致聚合物层为环氧树脂光致聚合物膜，其制备方法包括如下步骤：
（1）称取原料：按重量份称取双酚A二缩水甘油醚600份、五乙烯六胺20份、苯基甲基丙烯酸酯30份、引发剂0.1份、纳米二氧化硅5份；
（2）原料混合：在常温条件下，将步骤（1）中称取的双酚A二缩水甘油醚、五乙烯六胺和纳米二氧化硅加入搅拌反应器中搅拌混合均匀，然后再加入称好的苯基甲基丙烯酸酯和引发剂，接续搅拌混合至均匀；
（3）超声分散：将步骤（2）中混合均匀的原料置于超声仪中，室温下超声分散15～20min，得到聚合物溶液；
（4）涂膜：将步骤（3）中超声分散后的聚合物溶液在基片上涂敷成180～220nm的厚度；
（5）真空干燥：将步骤（4）中涂覆后的基片置于真空干燥箱中，在真空度0.003MPa、60℃的条件下干燥固化20h，得到所述环氧树脂光致聚合物膜。
实施例2
一种抗刮痕全息存储卡，包括：第一基片层1、粘结胶层2和第二基片层3；所述粘结胶层2粘附在所述第一基片层1和第二基片层3之间；所述第一基片层1和粘结胶层2相接的一面上涂覆固化有光致聚合物层4；所述粘结胶层和第二基片层的尺寸大于所述第一基片层的尺寸。
其中，所述第一基片层1和第二基片层3为光学玻璃层，厚度为2mm，所述光学玻璃层上涂覆固化所述光致聚合物的一面上还涂覆有一层聚碳酸酯。
所述粘结胶层为聚乙烯醇缩丁醛（PVB），厚度为0.38mm。
所述光致聚合物层为环氧树脂光致聚合物膜，其制备方法包括如下步骤：
（1）称取原料：按重量份称取双酚A二缩水甘油醚80份、五乙烯六胺30份、苯基甲基丙烯酸酯35份、引发剂0.5份、纳米二氧化硅10份；
（2）原料混合：在常温条件下，将步骤（1）中称取的双酚A二缩水甘油醚、五乙烯六胺和纳米二氧化硅加入搅拌反应器中搅拌混合均匀，然后再加入称好的苯基甲基丙烯酸酯和引发剂，接续搅拌混合至均匀；
（3）超声分散：将步骤（2）中混合均匀的原料置于超声仪中，室温下超声分散15～20min，得到聚合物溶液；
（4）涂膜：将步骤（3）中超声分散后的聚合物溶液在基片上涂敷成180～220nm的厚度；
（5）真空干燥：将步骤（4）中涂覆后的基片置于真空干燥箱中，在真空度0.005 MPa、40℃的条件下干燥固化40h，得到所述环氧树脂光致聚合物膜。
上述全息存储卡经参试，其敏感度为5.8×10-3cm2/mJ，折射率调制度为8～10×10-4，在10～80℃范围内具有耐划伤性能。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (6)

1.一种抗刮痕全息存储卡，其特征在于，包括：第一基片层、粘结胶层和第二基片层；所述粘结胶层粘附在所述第一基片层和第二基片层之间；所述第一基片层和粘结胶层相接的一面上涂覆固化有光致聚合物层；所述粘结胶层和第二基片层的尺寸大于所述第一基片层的尺寸。
2.根据权利要求1所述的抗刮痕全息存储卡，其特征在于，所述第一基片层和第二基片层为聚碳酸酯层。
3.根据权利要求1所述的抗刮痕全息存储卡，其特征在于，所述第一基片层和第二基片层为光学玻璃层，所述光学玻璃层上涂覆固化所述光致聚合物的一面上还涂覆有一层聚碳酸酯。
4.根据权利要求1所述的抗刮痕全息存储卡，其特征在于，所述光致聚合物层为环氧树脂光致聚合物膜。
5.根据权利要求4所述的抗刮痕全息存储卡，其特征在于，所述环氧树脂光致聚合物膜的制备方法包括如下步骤：
（1）称取原料：按重量份称取双酚A二缩水甘油醚60～80份、五乙烯六胺20～30份、苯基甲基丙烯酸酯30～35份、引发剂0.1～0.5份、纳米二氧化硅5～10份；
（2）原料混合：在常温条件下，将步骤（1）中称取的双酚A二缩水甘油醚、五乙烯六胺和纳米二氧化硅加入搅拌反应器中搅拌混合均匀，然后再加入称好的苯基甲基丙烯酸酯和引发剂，接续搅拌混合至均匀；
（3）超声分散：将步骤（2）中混合均匀的原料置于超声仪中，室温下超声分散15～20min，得到聚合物溶液；
（4）涂膜：将步骤（3）中超声分散后的聚合物溶液在基片上涂敷成一定厚度；
（5）真空干燥：将步骤（4）中涂覆后的基片置于真空干燥箱中，在一定条件下干燥固化，得到所述环氧树脂光致聚合物膜。
6.根据权利要求5所述的抗刮痕全息存储卡，其特征在于，所述步骤（4）中，所述厚度为180～220nm；所述步骤（5）中，所述真空干燥的条件为：真空度0.003～0.005 MPa、40～60℃，时间20~40h。
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