CN107331728A - 改善perc高效电池el良率的工艺 - Google Patents

改善perc高效电池el良率的工艺 Download PDF

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CN107331728A
CN107331728A CN201710470049.7A CN201710470049A CN107331728A CN 107331728 A CN107331728 A CN 107331728A CN 201710470049 A CN201710470049 A CN 201710470049A CN 107331728 A CN107331728 A CN 107331728A
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CN107331728B (zh
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高翔
孙铁囤
姚伟忠
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Changzhou EGing Photovoltaic Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • H01L31/048Encapsulation of modules
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本发明涉及太阳能电池片制备技术领域,尤其是一种改善PERC高效电池EL良率的工艺,该工艺包括以下步骤:a、将炉管内的温度提升至800±200℃,然后向炉管内通入5000±1000sccm氮气进行吹扫,去除炉管内杂质物;b、接着向炉管内通入5000±1000sccm氧气,将步骤a中不能去除的杂质进行氧化反应;c、将炉管内的温度降至500±200℃,通入氮气进行吹扫,将杂质氧化反应后的生成物吹除;d、最后将硅片送入炉管内进行退火处理,本发明的改善PERC高效电池EL良率的工艺将沉淀在炉管里的杂质通过提升温度,通入氮气和氧气,将杂质氧化反应并吹除后,再进行退火处理,Voc和效率有所提升,EL无异常。

Description

改善PERC高效电池EL良率的工艺
技术领域
本发明涉及太阳能电池片制备技术领域,尤其是一种改善PERC(钝化发射极背面接触太阳能电池)高效电池EL良率的工艺。
背景技术
目前常规退火是高温去水汽,增加氧化铝的致密性,在实际的生产过程中发现,炉管工艺次数达到一定量时,制程电池片EL测试检测出硅片的表面有黑点存在,VOC偏低。
发明内容
本发明要解决的技术问题是:为了解决现有技术炉管工艺次数达到一定量时,硅片退火去水汽时,所制程的电池片EL测试时,存在硅片表面有黑点存在且VOC偏低的问题,现提供一种改善PERC(钝化发射极背面接触太阳能电池)高效电池EL良率的工艺。
本发明解决其技术问题所采用的技术方案是:一种改善PERC(钝化发射极背面接触太阳能电池)高效电池EL良率的工艺,该工艺包括以下步骤:
a、将炉管内的温度提升至800±200℃,然后向炉管内通入5000±1000sccm氮气进行吹扫,去除炉管内杂质物;
b、接着向炉管内通入5000±1000sccm氧气,将步骤a中不能去除的杂质进行氧化反应;
c、将炉管内的温度降至500±200℃,将里面的杂质凝固,变成粉尘,通入氮气进行吹扫,将杂质氧化反应后的生成物吹除;
d、最后将硅片送入炉管内进行退火处理。
本发明的有益效果是:本发明的改善PERC高效电池EL良率的工艺将沉淀在炉管里的杂质通过提升温度,通入氮气和氧气,将杂质氧化反应并吹除后,再进行退火处理,Voc和效率有所提升,EL无异常,
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是对比例1中常规高温去水汽制成电池片后的EL示意图;
图2是实施例1中高温去水汽后制成电池片后的EL示意图。
具体实施方式
现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图,仅以示意方式说明本发明的基本结构,因此其仅显示与本发明有关的构成,方向和参照(例如,上、下、左、右、等等)可以仅用于帮助对附图中的特征的描述。因此,并非在限制性意义上采用以下具体实施方式,并且仅仅由所附权利要求及其等同形式来限定所请求保护的主题的范围。
实施例1
一种改善PERC高效电池EL良率的工艺,该工艺包括以下步骤:
a、将炉管内的温度提升至800±200℃,然后向炉管内通入5000±1000sccm氮气进行吹扫,去除炉管内杂质物;
b、接着向炉管内通入5000±1000sccm氧气,将步骤a中不能去除的杂质进行氧化反应;
c、将炉管内的温度降至500±200℃,将里面的杂质凝固,变成粉尘,通入氮气进行吹扫,将杂质氧化反应后的生成物吹除;
d、最后将硅片送入炉管内进行退火处理,硅片送入炉管内保持恒定温度,通过高温去除水汽,增加硅片表面氧化铝的致密性。
对比例1
常规技术只采用实施例1中的步骤d。
用上述实施例1中的工艺和对比例1中的工艺分别制备2000片硅片,性能对比如下表1:
表1:
表1中:以对比例1中各项参数的正常数值为基准点,高于对比例1中各项参数的正常数值为正值,低于对比例1中各项参数的正常数值为负值;
结合表1,实施例1中的改善PERC高效电池EL良率的工艺相比于对比例1中的常规退火工艺制备的电池片,Voc和效率有所提升,对比图1和图2,EL无异常。
上述依据本发明的理想实施例为启示,通过上述的说明内容,相关工作人员完全可以在不偏离本项发明技术思想的范围内,进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容,必须要根据权利要求范围来确定其技术性范围。

Claims (1)

1.一种改善PERC高效电池EL良率的工艺,其特征在于:该工艺包括以下步骤:
a、将炉管内的温度提升至800±200℃,然后向炉管内通入5000±1000sccm氮气进行吹扫,去除炉管内杂质物;
b、接着向炉管内通入5000±1000sccm氧气,将步骤a中不能去除的杂质进行氧化反应;
c、将炉管内的温度降至500±200℃,将里面的杂质凝固,变成粉尘,通入氮气进行吹扫,将杂质氧化反应后的生成物吹除;
d、最后将硅片送入炉管内进行退火处理。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742185A (zh) * 2018-12-20 2019-05-10 横店集团东磁股份有限公司 一种改善晶硅双面电池小白点的变温变压热氧化工艺
CN110295358A (zh) * 2019-07-10 2019-10-01 平煤隆基新能源科技有限公司 一种低el黑斑的pecvd机台饱和工艺
CN112382702A (zh) * 2020-11-05 2021-02-19 横店集团东磁股份有限公司 一种改善晶硅双面电池白点的退火方法

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CN103894381A (zh) * 2014-03-20 2014-07-02 上海华力微电子有限公司 一种炉管清洗方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742185A (zh) * 2018-12-20 2019-05-10 横店集团东磁股份有限公司 一种改善晶硅双面电池小白点的变温变压热氧化工艺
CN110295358A (zh) * 2019-07-10 2019-10-01 平煤隆基新能源科技有限公司 一种低el黑斑的pecvd机台饱和工艺
CN112382702A (zh) * 2020-11-05 2021-02-19 横店集团东磁股份有限公司 一种改善晶硅双面电池白点的退火方法
CN112382702B (zh) * 2020-11-05 2022-08-16 横店集团东磁股份有限公司 一种改善晶硅双面电池白点的退火方法

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