CN104091853A - 一种晶硅太阳能电池叠层钝化的方法 - Google Patents
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- 238000002161 passivation Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- 238000009279 wet oxidation reaction Methods 0.000 claims abstract description 3
- 238000005516 engineering process Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 239000002355 dual-layer Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000011259 mixed solution Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 abstract 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 abstract 1
- 238000009966 trimming Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
本发明提供了一种实现晶体硅太阳能电池叠层钝化的方法。所述方法包括如下步骤:选用P型太阳能级硅片作为衬底;利用氢氟酸和硝酸混合溶液进行制绒;磷扩散;刻蚀去边;去除磷硅玻璃;利用混酸溶液对硅片进行氧化;利用PECVD制备减反射膜。该方法通过湿法氧化生长二氧化硅和PECVD生长氮化硅的方法,实现了叠层钝化。
Description
技术领域
本发明设计一种晶体硅太阳能电池叠层钝化,属于新能源、半导体光电子等技术领域。
背景技术
等离子增强化学气相沉积(PECVD)制备氢化非晶氮化硅现已经成为工业太阳能电池标准工艺中的一道工序,其主要存在三个方面的优势:作为减反射膜,钝化太阳能电池表面从而降低表面复合速度;薄膜中丰富的氢可以钝化体内的缺陷态。氮化硅膜层不仅减缓浆料中玻璃体对硅的腐蚀,抑制银的扩散速度,从而使后续快烧工艺温度更容易调节,而且致密的氮化硅膜层是有害杂质的良好阻挡层,同时生成的氢原子对硅片具有表面钝化与体钝化的双重作用,可以很好地修复硅中的位错、表面悬挂键,提高了硅片中载流子的迁移率因而成为制作高效电池的关键技术。然而,相比与氮化硅膜,适当厚度的二氧化硅具有更佳的钝化效果。常规二氧化硅生成方法一般通过高温氧化炉进行氧化,但干氧条件下二氧化硅生成速度慢,需要较长的时间,而且长时间的高温过程会导致扩散形成的PN结表面浓度和结深发生改变,使得结深增加,表面浓度降低,从而对太阳能电池效率产生了不利影响。。
发明内容
本发明的目的是为了克服现有技术存在的缺点和不足,而提供一种晶硅太阳能电池叠层钝化工艺,以制作高效、低成本多晶硅太阳能电池。
为了实现上述目的,本发明的技术方案是,包括以下步骤:
(1)、选用纯度不小于99.999%的P型多晶硅片为基片,其电阻率为0.5-3Ω.cm,厚度范围为180-220微米。
(2)、采用HF、HNO3及水的混合溶液在多晶硅片表面制备凹坑状绒面;
(3)、将制备绒面后的多晶硅硅片放入高温扩散炉,实现磷掺杂,形成PN结,表面方块电阻范围为60-65Ω/◇;
(4)、将高温扩散后的硅片放入等离子体刻蚀机,去除扩散工艺过程中侧面形成的PN结;
(5)、将硅片放入HF酸及水的混合溶液,去除硅片表面的磷硅玻璃层;
(6)将去除磷硅玻璃后的硅片放入HNO3及H2O2的混合溶液,在硅片两个表面氧化生长一定厚度的二氧化硅。
(6)、采用PECVD设备在P型多晶硅硅片的掺杂层上沉积略低于常规膜厚的Si3N4膜;
(7)、采用丝网印刷工艺制作背银电极、铝背场和正银电极,并进行高温烧结。
本发明的优点在于:
1)、通过湿法氧化方式生长二氧化硅膜,不引入新型设备,不引入高温过程,有效降低成本;
2)、二氧化硅形成选用常规的HNO3及H2O2,可以集成入磷硅玻璃清洗,工艺升级快速简单,不需进行设备和控制软件的升级和改造;
3)、生长的二氧化硅除了具有较好的钝化效果,还充当减反射膜的作用,因此沉积氮化硅减反射膜的膜厚可适当降低,所需的工艺时间缩短,增大了产能,降低了生产成本;
4)、沉积在硅片背表面的二氧化硅降低了背场界面态密度,也对被表面具有较好的钝化效果。故而该工艺简单、成本低廉。采用该专利技术制备的多晶硅太阳能电池光电转换效率大于16.6%。
附图说明
图1图1所示为发明的工艺流程图;
具体实施方式
为了更好地理解本发明,下面用具体实例来详细说明本发明的技术方案,但是本发明并不局限于此。
本发明的一种晶硅太阳能电池叠层钝化工艺,在完成硅片表面绒面制备、高温扩散制结、等离子刻蚀及磷硅玻璃清洗等工艺步骤后,将硅片置于HNO3及H2O2的混合溶液中,利用混合溶液的强氧化性,在硅片两面形成二氧化硅层。
具体步骤为:
1)硅片绒面制备步骤:采用氢氟酸及硝酸的混合溶液,按照HNO3∶HF∶H2O=3∶1∶2.5的比例,在0-3℃温度下,腐蚀90-120秒,在硅片表面腐蚀出凹坑状绒面结构。
2)高温扩散制结步骤:将上述处理后的硅片放入高温扩散炉,在850-900℃温度下,以氮气携源的放入送入一定流量的包含三氯氧磷蒸汽的氮气,同时通入足量氧气,维持30-60分钟,制作出N型发射极,扩散后方块电阻50-60Ω/◇。
3)等离子体刻蚀:利用电感耦合式刻蚀机,通入适量四氟化碳及氧气,刻蚀去除硅片厚度方向在扩散过程中形成的边缘PN结。
4)去磷硅玻璃清洗:将刻蚀完成后的硅片放入10%的氧氟酸溶液,停留120-300秒,将硅片表面的磷硅玻璃层去除。
5)二氧化硅氧化层制作:将上述处理后的硅片放入同等体积的硝酸与双氧水混合溶液中,温度为室温,氧化时间5-15分钟。
6)氮化硅膜沉积:利用PECVD设备,按NH3/SiH4=4∶1~9∶1的比例,在硅片表面沉积一层75纳米左右的氮化硅膜,折射率2.05-2.1。
7)丝网印刷及分选:采用丝网印刷和高温烧结工艺制作背银电极、铝背场和正银电极,并进行效率分选完成多晶硅太阳能电池的制作;
本发明专利的特定实施例已对本发明专利的内容做了详尽说明。对本领域一般技术人员而言,在不背离本发明专利精神的前提下对它所做的任何显而易见的改动,都构成对本发明专利的侵犯,将承担相应的法律责任。
Claims (5)
1.一种晶硅太阳能电池叠层钝化工艺,其特征在于:利用湿法氧化的方式在硅片表面形成一定厚度的二氧化硅,之后进行氮化硅膜层沉积。
2.如权力要求1所述的方法,其特征在于:氧化用溶液为硝酸及双氧水。
3.按照权力要求1所述的晶硅太阳能电池叠层钝化工艺,其特征在于:在氧化后的硅片表面直接沉积氮化硅膜,实现双层钝化。
4.按照权力要求1所述的晶硅太阳能电池叠层钝化工艺,其特征在于:二氧化硅厚度小于5~15纳米,氮化硅厚度65-80纳米。
5.如权力要求1所述的多晶硅太阳能电池叠层钝化工艺,其特征在于:叠层氮化硅的折射率自下而上渐进式降低,并且是连续的。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104393072A (zh) * | 2014-10-29 | 2015-03-04 | 湖南红太阳新能源科技有限公司 | 用于海洋浮标的光伏组件及其太阳能电池片的制备方法 |
CN109119491A (zh) * | 2017-06-23 | 2019-01-01 | 财团法人金属工业研究发展中心 | 太阳能电池结构及其制造方法 |
CN109300999A (zh) * | 2018-12-03 | 2019-02-01 | 山东力诺太阳能电力股份有限公司 | 一种高效晶硅太阳能电池制备方法及其制备的电池 |
CN109713049A (zh) * | 2018-12-17 | 2019-05-03 | 盐城阿特斯协鑫阳光电力科技有限公司 | 太阳能电池减反射膜及其制备方法 |
CN111509081A (zh) * | 2020-03-20 | 2020-08-07 | 中国科学院宁波材料技术与工程研究所 | 超薄含氧氮硅薄膜的制备方法及其在钝化接触电池中的应用 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104393072A (zh) * | 2014-10-29 | 2015-03-04 | 湖南红太阳新能源科技有限公司 | 用于海洋浮标的光伏组件及其太阳能电池片的制备方法 |
CN109119491A (zh) * | 2017-06-23 | 2019-01-01 | 财团法人金属工业研究发展中心 | 太阳能电池结构及其制造方法 |
CN109300999A (zh) * | 2018-12-03 | 2019-02-01 | 山东力诺太阳能电力股份有限公司 | 一种高效晶硅太阳能电池制备方法及其制备的电池 |
CN109713049A (zh) * | 2018-12-17 | 2019-05-03 | 盐城阿特斯协鑫阳光电力科技有限公司 | 太阳能电池减反射膜及其制备方法 |
CN111509081A (zh) * | 2020-03-20 | 2020-08-07 | 中国科学院宁波材料技术与工程研究所 | 超薄含氧氮硅薄膜的制备方法及其在钝化接触电池中的应用 |
CN111509081B (zh) * | 2020-03-20 | 2023-10-20 | 中国科学院宁波材料技术与工程研究所 | 超薄含氧氮硅薄膜的制备方法及其在钝化接触电池中的应用 |
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