CN107311666A - 低温共烧陶瓷基板的成型与烧结方法 - Google Patents
低温共烧陶瓷基板的成型与烧结方法 Download PDFInfo
- Publication number
- CN107311666A CN107311666A CN201710369217.3A CN201710369217A CN107311666A CN 107311666 A CN107311666 A CN 107311666A CN 201710369217 A CN201710369217 A CN 201710369217A CN 107311666 A CN107311666 A CN 107311666A
- Authority
- CN
- China
- Prior art keywords
- parts
- temperature
- ceramic green
- ceramic substrate
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/638—Removal thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
- C04B41/5116—Ag or Au
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/36—Glass starting materials for making ceramics, e.g. silica glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/386—Boron nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/425—Graphite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/428—Silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
- C04B2235/445—Fluoride containing anions, e.g. fluosilicate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Ceramic Products (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
本发明涉及低温共烧陶瓷基板的成型与烧结方法,包括以下步骤:制备陶瓷坯片;将陶瓷坯片进行堆叠真空包装层压得陶瓷生坯组;对陶瓷生坯组进行冲孔、用银浆填孔,在陶瓷生坯组的顶面和底面分别用银浆印刷电路图形,获得待烧陶瓷生坯组;将待烧陶瓷生坯组放入排胶炉中进行两步排胶去粘;获得烧结中间过渡体;将烧结中间过渡体升温至陶瓷生坯烧结温度,并保温直至获得致密的陶瓷基板;然后冷却降温,获得低温共烧陶瓷基板。相对现有技术,本发明氮化铝、氮化硼、氧化铍的复合,降低了成本,保持了散热性能;添加石墨烯纳米颗粒,有利于提高热传递,也提高了陶瓷基板的致密度;羟甲基纤维素优化了陶瓷基板的物化性能。
Description
技术领域
本发明涉及半导体技术领域,具体涉及低温共烧陶瓷基板的成型与烧结方法。
背景技术
低温共烧陶瓷(LTCC)(Low Temperature Co-fired Ceramic)技术自上世纪八十年代首次开发应用以来,凭借其小型化、高密度、高集成度、高可靠性等优势广泛应用于无线通讯、汽车电子、计算机、机载通信导航、雷达、卫星等领域。在众多的电路基板中,LTCC不仅具有陶瓷类优良的高频、高强度、耐高温耐高湿等特性,但是现有技术中申请号为201610473225.8的《一种超薄型低温共烧陶瓷基板的快速成型与烧结方法》,由于其厚度薄、共成型层数少,其烧结时对环境的差异性更加敏感,对温度、气流量等的要求更加苛刻,选取材料易导致制成的陶瓷基板散热效果不佳,致密性差,影响使用寿命。
发明内容
本发明的目的是提供一种低温共烧陶瓷基板的成型与烧结方法,所要解决的技术问题是:选取材料易导致制成的陶瓷基板散热效果不佳,致密性差,影响使用寿命。
本发明解决上述技术问题的技术方案如下:低温共烧陶瓷基板的成型与烧结方法,包括以下步骤:
步骤S1.按重量份数计,取氮化铝50~64份、氮化硼30~40份、氧化铍10~20份、氧化铝30~40份、烧结助剂15~20份、石墨烯纳米颗粒2~4份、氟化钙5~15份、羟甲基纤维素3~6份、去离子水15~20份、硅粉5~10份、增塑剂1份、分散剂1份、粘结剂1份研磨成浆料,再通过流延的方法制得陶瓷坯片,陶瓷坯片的厚度控制在0.300mm以下;
步骤S2.将3-4片陶瓷坯片进行堆叠真空包装层压,获得陶瓷生坯组;对陶瓷生坯组进行冲孔、用银浆填孔,在陶瓷生坯组的顶面和底面分别用银浆印刷电路图形,获得待烧陶瓷生坯组;
步骤S3.将待烧陶瓷生坯组放入排胶炉中进行两步排胶去粘;获得烧结中间过渡体;
步骤S4.将烧结中间过渡体升温至陶瓷生坯烧结温度,并保温直至获得致密的陶瓷基板;然后冷却降温,获得总厚度≤0.5mm的低温共烧陶瓷基板。
本发明的有益效果是:氮化铝、氮化硼、氧化铍的复合,综合降低了成本,保持了优良的散热性能;添加石墨烯纳米颗粒,有利于提高热传递,同时也提高了陶瓷基板的致密度;羟甲基纤维素优化了陶瓷基板的物化性能。
在上述技术方案的基础上,本发明还可以做如下改进。
进一步,步骤S1中取氮化铝50~64份、氮化硼30~40份、氧化铍10~20份、氧化铝30~40份、烧结助剂15~20份、石墨烯纳米颗粒2~4份、氟化钙5~15份、羟甲基纤维素3~6份、去离子水15~20份、硅粉5~10份、增塑剂1份、分散剂1份、粘结剂1份进行混合,进行湿法球磨,球磨2~4小时,制成可凝胶陶瓷浆料,再进行真空搅拌除泡;将除泡后的陶瓷浆料再通过流延的方法制得陶瓷坯片。
采用上述进一步方案的有益效果是:制备陶瓷坯片的工艺简单,利于产业化。
进一步,步骤S1中的烧结助剂,按重量份数计,原料由氧化硅7份、氧化钙1份、氧化镁0.5份、氧化铝0.5份、五氧化二磷0.5份和碳酸锂0.5份组成,将上述原料进行混料和研磨,研磨后置于坩埚中,在1643~1720℃的温度下保温2~3h熔融,再倒入蒸馏水中淬冷,得玻璃碎粒;将玻璃碎粒烘干后破碎、研磨得烧结助剂。
采用上述进一步方案的有益效果是:氧化硅、氧化钙、氧化镁、氧化铝、五氧化二磷和碳酸锂构成的烧结助剂,能够与主成分材料形成特殊晶体,继而对于陶瓷基板的成瓷性能也会大大增强。
进一步,步骤S1中的烧结助剂的粒径小于0.5μm。
进一步,步骤S3中,将待烧陶瓷生坯组进行两步排胶去粘,具体为第一步排胶去粘的烧制温度为245~260℃,时间12~19min;第二步排胶去粘的烧制温度为440~460℃,时间12~19min;两步排胶去粘的升温速率均为3~4℃/min、气流量均为110~130NL/min。
采用上述进一步方案的有益效果是:排胶去粘的工艺简单,排胶效果好,利于产业化。
进一步,步骤S4中,冷却降温过程中,当温度低于630℃后,使用鼓风机辅助降温;当温度低于120℃后,取出烧结物,获得总厚度≤0.5mm的低温共烧陶瓷基板。
采用上述进一步方案的有益效果是:低温共烧陶瓷基板的降温工艺简单,排胶效果好,利于产业化。
附图说明
图1为本发明低温共烧陶瓷基板的成型与烧结方法的流程图。
具体实施方式
以下结合附图对本发明的原理和特征进行描述,所举实例只用于解释本发明,并非用于限定本发明的范围。
实施例1:
如图1所示,低温共烧陶瓷基板的成型与烧结方法,包括以下步骤:
步骤S1.按重量份数计,取氮化铝64份、氮化硼30份、氧化铍10份、氧化铝30份、烧结助剂15份、石墨烯纳米颗粒2份、氟化钙5份、羟甲基纤维素3份、去离子水15份、硅粉5份、增塑剂1份、分散剂1份、粘结剂1份进行湿法球磨,球磨2小时,制成可凝胶陶瓷浆料,再进行真空搅拌除泡;将除泡后的陶瓷浆料再通过流延的方法制得陶瓷坯片,陶瓷坯片的厚度控制在0.300mm以下;
步骤S2.将3片陶瓷坯片进行堆叠真空包装层压,获得陶瓷生坯组;对陶瓷生坯组进行冲孔、用银浆填孔,在陶瓷生坯组的顶面和底面分别用银浆印刷电路图形,获得待烧陶瓷生坯组;
步骤S3.将待烧陶瓷生坯组放入排胶炉中进行两步排胶去粘,第一步排胶去粘的烧制温度为245℃,时间19min;第二步排胶去粘的烧制温度为440℃,时间19min;两步排胶去粘的升温速率均为3℃/min、气流量均为110NL/min;获得烧结中间过渡体;
步骤S4.将烧结中间过渡体升温至陶瓷生坯烧结温度,并保温直至获得致密的陶瓷基板;然后冷却降温,当温度低于630℃后,使用鼓风机辅助降温;当温度低于120℃后,取出烧结物,获得总厚度≤0.5mm的低温共烧陶瓷基板。
上述实施例中,步骤S1中的烧结助剂,按重量份数计,原料由氧化硅7份、氧化钙1份、氧化镁0.5份、氧化铝0.5份、五氧化二磷0.5份和碳酸锂0.5份组成,将上述原料进行混料和研磨,研磨后置于坩埚中,在1643℃的温度下保温3h熔融,再倒入蒸馏水中淬冷,得玻璃碎粒;将玻璃碎粒烘干后破碎、研磨得烧结助剂。
上述实施例中,步骤S1中的烧结助剂的粒径小于0.5μm。
本实施例中氮化铝、氮化硼、氧化铍的复合,综合降低了成本,保持了优良的散热性能;添加石墨烯纳米颗粒,有利于提高热传递,同时也提高了陶瓷基板的致密度;羟甲基纤维素优化了陶瓷基板的物化性能。
实施例2:
如图1所示,低温共烧陶瓷基板的成型与烧结方法,包括以下步骤:
步骤S1.按重量份数计,取氮化铝50份、氮化硼40份、氧化铍20份、氧化铝40份、烧结助剂20份、石墨烯纳米颗粒4份、氟化钙15份、羟甲基纤维素6份、去离子水20份、硅粉10份、增塑剂1份、分散剂1份、粘结剂1份进行湿法球磨,球磨4小时,制成可凝胶陶瓷浆料,再进行真空搅拌除泡;将除泡后的陶瓷浆料再通过流延的方法制得陶瓷坯片,陶瓷坯片的厚度控制在0.300mm以下;
步骤S2.将4片陶瓷坯片进行堆叠真空包装层压,获得陶瓷生坯组;对陶瓷生坯组进行冲孔、用银浆填孔,在陶瓷生坯组的顶面和底面分别用银浆印刷电路图形,获得待烧陶瓷生坯组;
步骤S3.将待烧陶瓷生坯组放入排胶炉中进行两步排胶去粘,第一步排胶去粘的烧制温度为260℃,时间12min;第二步排胶去粘的烧制温度为460℃,时间12min;两步排胶去粘的升温速率均为4℃/min、气流量均为130NL/min;获得烧结中间过渡体;
步骤S4.将烧结中间过渡体升温至陶瓷生坯烧结温度,并保温直至获得致密的陶瓷基板;然后冷却降温,当温度低于630℃后,使用鼓风机辅助降温;当温度低于120℃后,取出烧结物,获得总厚度≤0.5mm的低温共烧陶瓷基板。
上述实施例中,步骤S1中的烧结助剂,按重量份数计,原料由氧化硅7份、氧化钙1份、氧化镁0.5份、氧化铝0.5份、五氧化二磷0.5份和碳酸锂0.5份组成,将上述原料进行混料和研磨,研磨后置于坩埚中,在1643~1720℃的温度下保温2~3h熔融,再倒入蒸馏水中淬冷,得玻璃碎粒;将玻璃碎粒烘干后破碎、研磨得烧结助剂。
上述实施例中,步骤S1中的烧结助剂的粒径小于0.5μm。
本实施例中氮化铝、氮化硼、氧化铍的复合,综合降低了成本,保持了优良的散热性能;添加石墨烯纳米颗粒,有利于提高热传递,同时也提高了陶瓷基板的致密度;羟甲基纤维素优化了陶瓷基板的物化性能。
实施例3:
如图1所示,低温共烧陶瓷基板的成型与烧结方法,包括以下步骤:
步骤S1.按重量份数计,取氮化铝57份、氮化硼35份、氧化铍15份、氧化铝35份、烧结助剂18份、石墨烯纳米颗粒3份、氟化钙10份、羟甲基纤维素5份、去离子水17份、硅粉8份、增塑剂1份、分散剂1份、粘结剂1份进行湿法球磨,球磨3小时,制成可凝胶陶瓷浆料,再进行真空搅拌除泡;将除泡后的陶瓷浆料再通过流延的方法制得陶瓷坯片,陶瓷坯片的厚度控制在0.300mm以下;
步骤S2.将3-4片陶瓷坯片进行堆叠真空包装层压,获得陶瓷生坯组;对陶瓷生坯组进行冲孔、用银浆填孔,在陶瓷生坯组的顶面和底面分别用银浆印刷电路图形,获得待烧陶瓷生坯组;
步骤S3.将待烧陶瓷生坯组放入排胶炉中进行两步排胶去粘,第一步排胶去粘的烧制温度为253℃,时间15min;第二步排胶去粘的烧制温度为450℃,时间15min;两步排胶去粘的升温速率均为4℃/min、气流量均为120NL/min;获得烧结中间过渡体;
步骤S4.将烧结中间过渡体升温至陶瓷生坯烧结温度,并保温直至获得致密的陶瓷基板;然后冷却降温,当温度低于630℃后,使用鼓风机辅助降温;当温度低于120℃后,取出烧结物,获得总厚度≤0.5mm的低温共烧陶瓷基板。
上述实施例中,步骤S1中的烧结助剂,按重量份数计,原料由氧化硅7份、氧化钙1份、氧化镁0.5份、氧化铝0.5份、五氧化二磷0.5份和碳酸锂0.5份组成,将上述原料进行混料和研磨,研磨后置于坩埚中,在1643~1720℃的温度下保温2~3h熔融,再倒入蒸馏水中淬冷,得玻璃碎粒;将玻璃碎粒烘干后破碎、研磨得烧结助剂。
上述实施例中,步骤S1中的烧结助剂的粒径小于0.5μm。
本实施例中氮化铝、氮化硼、氧化铍的复合,综合降低了成本,保持了优良的散热性能;添加石墨烯纳米颗粒,有利于提高热传递,同时也提高了陶瓷基板的致密度;羟甲基纤维素优化了陶瓷基板的物化性能。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (6)
1.低温共烧陶瓷基板的成型与烧结方法,其特征在于,包括以下步骤:
步骤S1.按重量份数计,取氮化铝50~64份、氮化硼30~40份、氧化铍10~20份、氧化铝30~40份、烧结助剂15~20份、石墨烯纳米颗粒2~4份、氟化钙5~15份、羟甲基纤维素3~6份、去离子水15~20份、硅粉5~10份、增塑剂1份、分散剂1份、粘结剂1份研磨成浆料,再通过流延的方法制得陶瓷坯片,陶瓷坯片的厚度控制在0.300mm以下;
步骤S2.将3-4片陶瓷坯片进行堆叠真空包装层压,获得陶瓷生坯组;对陶瓷生坯组进行冲孔、用银浆填孔,在陶瓷生坯组的顶面和底面分别用银浆印刷电路图形,获得待烧陶瓷生坯组;
步骤S3.将待烧陶瓷生坯组放入排胶炉中进行两步排胶去粘;获得烧结中间过渡体;
步骤S4.将烧结中间过渡体升温至陶瓷生坯烧结温度,并保温直至获得致密的陶瓷基板;然后冷却降温,获得总厚度≤0.5mm的低温共烧陶瓷基板。
2.根据权利要求1所述的低温共烧陶瓷基板的成型与烧结方法,其特征在于:步骤S1中取氮化铝50~64份、氮化硼30~40份、氧化铍10~20份、氧化铝30~40份、烧结助剂15~20份、石墨烯纳米颗粒2~4份、氟化钙5~15份、羟甲基纤维素3~6份、去离子水15~20份、硅粉5~10份、增塑剂1份、分散剂1份、粘结剂1份进行混合,进行湿法球磨,球磨2~4小时,制成可凝胶陶瓷浆料,再进行真空搅拌除泡;将除泡后的陶瓷浆料再通过流延的方法制得陶瓷坯片。
3.根据权利要求1或2所述的低温共烧陶瓷基板的成型与烧结方法,其特征在于:步骤S1中的烧结助剂,按重量份数计,原料由氧化硅7份、氧化钙1份、氧化镁0.5份、氧化铝0.5份、五氧化二磷0.5份和碳酸锂0.5份组成,将上述原料进行混料和研磨,研磨后置于坩埚中,在1643~1720℃的温度下保温2~3h熔融,再倒入蒸馏水中淬冷,得玻璃碎粒;将玻璃碎粒烘干后破碎、研磨得烧结助剂。
4.根据权利要求1所述的低温共烧陶瓷基板的成型与烧结方法,其特征在于:步骤S1中的烧结助剂的粒径小于0.5μm。
5.根据权利要求1所述的低温共烧陶瓷基板的成型与烧结方法,其特征在于:步骤S3中,将待烧陶瓷生坯组进行两步排胶去粘,具体为第一步排胶去粘的烧制温度为245~260℃,时间12~19min;第二步排胶去粘的烧制温度为440~460℃,时间12~19min;两步排胶去粘的升温速率均为3~4℃/min、气流量均为110~130NL/min。
6.根据权利要求1所述的低温共烧陶瓷基板的成型与烧结方法,其特征在于:步骤S4中,冷却降温过程中,当温度低于630℃后,使用鼓风机辅助降温;当温度低于120℃后,取出烧结物,获得总厚度≤0.5mm的低温共烧陶瓷基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710369217.3A CN107311666A (zh) | 2017-05-23 | 2017-05-23 | 低温共烧陶瓷基板的成型与烧结方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710369217.3A CN107311666A (zh) | 2017-05-23 | 2017-05-23 | 低温共烧陶瓷基板的成型与烧结方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107311666A true CN107311666A (zh) | 2017-11-03 |
Family
ID=60183652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710369217.3A Pending CN107311666A (zh) | 2017-05-23 | 2017-05-23 | 低温共烧陶瓷基板的成型与烧结方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107311666A (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109769349A (zh) * | 2019-03-18 | 2019-05-17 | 昆山福烨电子有限公司 | 一种双面陶瓷厚膜电路的生产工艺 |
CN110372392A (zh) * | 2019-07-02 | 2019-10-25 | 无锡元核芯微电子有限责任公司 | 一种陶瓷基板的烧结方法 |
CN113582702A (zh) * | 2021-08-12 | 2021-11-02 | 山东鹏程陶瓷新材料科技有限公司 | 一种电子封装用氮化铝陶瓷复合材料及制法 |
CN114364125A (zh) * | 2021-12-31 | 2022-04-15 | 中国电子科技集团公司第十四研究所 | 一种双面布置器件的厚膜混合集成电路及其生产方法 |
CN114401933A (zh) * | 2019-08-15 | 2022-04-26 | 万腾荣公司 | 氧化铍基座 |
CN114634366A (zh) * | 2022-02-17 | 2022-06-17 | 福建闽航电子有限公司 | 一种基于纤维氧化铝的陶瓷管壳制备方法 |
CN114890712A (zh) * | 2022-05-19 | 2022-08-12 | 中国振华集团云科电子有限公司 | 一种高热稳定性覆铜板制备方法 |
CN115925399A (zh) * | 2022-11-01 | 2023-04-07 | 南充三环电子有限公司 | 一种抗热震陶瓷基板及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101723673A (zh) * | 2009-12-10 | 2010-06-09 | 洛阳理工学院 | 一种高导热AlN电子陶瓷基片的生产方法 |
CN104086223A (zh) * | 2014-07-23 | 2014-10-08 | 湖南元素密码石墨烯研究院(有限合伙) | 一种led用高效散热陶瓷基板的制作方法 |
CN104926314A (zh) * | 2015-06-17 | 2015-09-23 | 长沙鼎成新材料科技有限公司 | 一种led用陶瓷基板 |
CN105693223A (zh) * | 2016-03-09 | 2016-06-22 | 苏州皓金石新材料科技有限公司 | 一种散热用电子陶瓷基板 |
CN105884376A (zh) * | 2016-04-01 | 2016-08-24 | 广东工业大学 | 一种硅粉流延制备氮化硅陶瓷基板的方法 |
CN106145914A (zh) * | 2016-06-24 | 2016-11-23 | 中国电子科技集团公司第三十八研究所 | 一种超薄型低温共烧陶瓷基板的快速成型与烧结方法 |
-
2017
- 2017-05-23 CN CN201710369217.3A patent/CN107311666A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101723673A (zh) * | 2009-12-10 | 2010-06-09 | 洛阳理工学院 | 一种高导热AlN电子陶瓷基片的生产方法 |
CN104086223A (zh) * | 2014-07-23 | 2014-10-08 | 湖南元素密码石墨烯研究院(有限合伙) | 一种led用高效散热陶瓷基板的制作方法 |
CN104926314A (zh) * | 2015-06-17 | 2015-09-23 | 长沙鼎成新材料科技有限公司 | 一种led用陶瓷基板 |
CN105693223A (zh) * | 2016-03-09 | 2016-06-22 | 苏州皓金石新材料科技有限公司 | 一种散热用电子陶瓷基板 |
CN105884376A (zh) * | 2016-04-01 | 2016-08-24 | 广东工业大学 | 一种硅粉流延制备氮化硅陶瓷基板的方法 |
CN106145914A (zh) * | 2016-06-24 | 2016-11-23 | 中国电子科技集团公司第三十八研究所 | 一种超薄型低温共烧陶瓷基板的快速成型与烧结方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109769349A (zh) * | 2019-03-18 | 2019-05-17 | 昆山福烨电子有限公司 | 一种双面陶瓷厚膜电路的生产工艺 |
CN109769349B (zh) * | 2019-03-18 | 2021-08-13 | 昆山福烨电子有限公司 | 一种双面陶瓷厚膜电路的生产工艺 |
CN110372392A (zh) * | 2019-07-02 | 2019-10-25 | 无锡元核芯微电子有限责任公司 | 一种陶瓷基板的烧结方法 |
CN114401933A (zh) * | 2019-08-15 | 2022-04-26 | 万腾荣公司 | 氧化铍基座 |
CN114401933B (zh) * | 2019-08-15 | 2023-11-24 | 万腾荣公司 | 氧化铍基座 |
CN113582702A (zh) * | 2021-08-12 | 2021-11-02 | 山东鹏程陶瓷新材料科技有限公司 | 一种电子封装用氮化铝陶瓷复合材料及制法 |
CN114364125A (zh) * | 2021-12-31 | 2022-04-15 | 中国电子科技集团公司第十四研究所 | 一种双面布置器件的厚膜混合集成电路及其生产方法 |
CN114634366A (zh) * | 2022-02-17 | 2022-06-17 | 福建闽航电子有限公司 | 一种基于纤维氧化铝的陶瓷管壳制备方法 |
CN114890712A (zh) * | 2022-05-19 | 2022-08-12 | 中国振华集团云科电子有限公司 | 一种高热稳定性覆铜板制备方法 |
CN115925399A (zh) * | 2022-11-01 | 2023-04-07 | 南充三环电子有限公司 | 一种抗热震陶瓷基板及其制备方法 |
CN115925399B (zh) * | 2022-11-01 | 2023-12-12 | 南充三环电子有限公司 | 一种抗热震陶瓷基板及其制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107311666A (zh) | 低温共烧陶瓷基板的成型与烧结方法 | |
CN110790568B (zh) | 一种低介ltcc生瓷带及其制备方法和用途 | |
JP2020526467A (ja) | ボロアルミノシリケート鉱物材料、低温同時焼成セラミック複合材料、低温同時焼成セラミック、複合基板及びその製造方法 | |
JP5803700B2 (ja) | 無機全固体二次電池 | |
JP2008031025A (ja) | セラミックグリーンシート及びセラミック基板 | |
CN106145914A (zh) | 一种超薄型低温共烧陶瓷基板的快速成型与烧结方法 | |
CN104844221A (zh) | 一种大尺寸氮化铝陶瓷基板的制备方法 | |
CN102503378B (zh) | 薄型片式陶瓷基板及其制造方法 | |
CN112341178B (zh) | 一种宽频低膨胀系数低温共烧玻璃复合陶瓷及其制备方法 | |
CN110372392A (zh) | 一种陶瓷基板的烧结方法 | |
JP6536858B2 (ja) | 誘電体セラミックスの製造方法および誘電体セラミックス | |
CN103553558B (zh) | 多元硼硅酸盐玻璃+氮化铝低温共烧陶瓷材料及其制备方法 | |
JP2937850B2 (ja) | 窒化アルミニウム焼結体の製造方法 | |
CN102276152B (zh) | 一种氧化铝陶瓷表面金属化的组合物 | |
WO2021024620A1 (ja) | ガラス粉末、誘電体材料、焼結体及び高周波用回路部材 | |
JPH0881267A (ja) | 窒化アルミニウム焼結体、その製造方法と窒化アルミニウム回路基板、その製造方法 | |
JP2000063182A (ja) | 低温焼結可能なセラミック原材料の製造方法 | |
JP2000327428A (ja) | 低温焼成ガラスセラミックスとその製造方法 | |
JP4337818B2 (ja) | 磁器組成物 | |
JPH06100359A (ja) | セラミックス焼結助剤の製造方法及びこれを用いたムライトセラミックスの製造方法 | |
JP4998833B2 (ja) | ガラスセラミック基板の製造方法およびガラスセラミック基板 | |
JP2003226572A (ja) | 低誘電率磁器組成物とその製造方法 | |
CN105384445A (zh) | 一种陶瓷散热材料及其在散热基板中的应用 | |
CN115557784A (zh) | 一种mzta陶瓷材料及其制备方法和应用 | |
JP2016160176A (ja) | 低温焼結アルミナセラミックスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171103 |