CN107244645B - Silicon substrate ScAlN film GHz resonator and preparation method thereof - Google Patents
Silicon substrate ScAlN film GHz resonator and preparation method thereof Download PDFInfo
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- CN107244645B CN107244645B CN201710470903.XA CN201710470903A CN107244645B CN 107244645 B CN107244645 B CN 107244645B CN 201710470903 A CN201710470903 A CN 201710470903A CN 107244645 B CN107244645 B CN 107244645B
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- 239000000758 substrate Substances 0.000 title claims abstract description 100
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 244
- 239000002346 layers by function Substances 0.000 claims abstract description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 32
- 238000001259 photo etching Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 230000012010 growth Effects 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000007773 growth pattern Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 241001124569 Lycaenidae Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
Abstract
The present invention relates to a kind of silicon substrate ScAlN film GHz resonator and preparation method thereof, the resonator from top to bottom successively includes wire bonding auxiliary layer, upper electrode layer, functional layer, auxiliary layer, seed layer, Bragg reflecting layer, device layer substrate, upper surface oxide layer, structure sheaf substrate and upper surface oxide layer；The structure sheaf substrate and device layer substrate form cavity, and Bragg reflecting layer is located at right above cavity, and auxiliary layer is disposed in parallel on seed layer as the patterned auxiliary layer of functional layer and functional layer.Resonator of the invention passes through the combination of Bragg reflecting layer and cavity type structure, sound wave can be inhibited to be lost to the maximum extent, improve the performance of device.
Description
Technical field
The invention belongs to microcomputer electrical domains, are related to silicon substrate ScAlN film GHz resonator and preparation method thereof.
Background technique
Aluminum nitride piezoelectric film has the high velocity of sound, high temperature resistant, steady performance, especially simultaneous with the characteristic of CMOS technology
Hold, makes it by domestic and international extensive concern.Silicon substrate AlN-MEMS piezoelectric device can be widely applied to sensor, resonator and energy
Measure the fields such as collector.
When silicon substrate AlN film is for fields such as operative sensor, resonator and energy harvesters, there are electromechanical coupling factors
Not high and quasi-static D33The deficiencies such as piezoelectric modulus is low.Bulk acoustic wave (BAW) device such as based on Bragg reflecting layer or air lumen type,
The characteristics of limitation and AlN film due to Bragg reflecting layer uniformity high velocity of sound, it can make sound wave in the propagation of reflecting layer bottom
There are a certain amount of leaky waves, so as to cause energy loss；When using the BAW device of cavity type, sacrificial layer work is either used
Skill still uses back pierced process, and the residual or adhesion in cavity will cause device performance and substantially decay；Aluminium nitride scandium
(ScAlN) static D can be improved while holding ALN piezoelectric membrane intrinsic physical attribute in piezoelectric membrane33Piezoelectric modulus and
Electromechanical coupling factor, but when making wet method pattern ScAlN film due to the presence of Sc element, electrode surface has residual so that device
Part internal resistance increases, performance decline.
Therefore, a kind of novel silicon base ScAlN film GHz resonator is needed effectively to overcome above-mentioned deficiency, promotes device
Energy.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of silicon substrate ScAlN film GHz resonators, and provide its preparation
Method.
In order to achieve the above objectives, the invention provides the following technical scheme:
1. silicon substrate ScAlN film GHz resonator from top to bottom successively includes wire bonding auxiliary layer, upper electrode layer, function
Layer, auxiliary layer, seed layer, Bragg reflecting layer, device layer substrate, upper surface oxide layer, structure sheaf substrate and upper surface oxidation
Layer；The structure sheaf substrate and device layer substrate form cavity, and Bragg reflecting layer is located at right above cavity, and auxiliary layer is as function
The patterned auxiliary layer of ergosphere and functional layer are disposed in parallel on seed layer.
Further, the device layer substrate and structure sheaf substrate are in the same size；Each metal layer of Bragg reflecting layer and crystal seed
Layer is in the same size and is narrower than 10~30 μm of device layer substrate；Auxiliary layer is arranged side by side as the patterned auxiliary layer of functional layer and functional layer
On seed layer, and the two width is consistent with seed layer, and upper electrode layer and wire bonding auxiliary layer are in the same size and be narrower than function
1~10 μm of ergosphere.
Further, the Bragg reflecting layer is covered by 2~10 layers of two kinds of metal alternating growth, described two metals
Acoustic impedance difference be 6 × 106g/cm2S~10 × 106g/cm2s。
Further, described two metals are aluminium and iridium.
Further, the depth of the cavity is 3~10 μm, and cavity width is 500~1000 μm.
Further, lower surface oxide layer forms alignment mark, and alignment mark is 10~30 μm wide.
2, the preparation method of silicon substrate ScAlN film GHz resonator described in any of the above item is following steps:
(1) taking with a thickness of 300~500 μm of silicon wafer is structure sheaf substrate, and two-sided thermal oxide respectively makes on structure sheaf substrate
The SiO that lower surface is respectively formed with a thickness of 200~350nm2Layer, i.e. upper surface oxide layer and lower surface oxide layer；
(2) corrosion is carried out with graphically to the structure sheaf substrate after step (1) oxidation, makes surface oxide layer thereon and structure
Layer substrate forms cavity, and the opposite direction of lower surface oxide layer forms alignment mark；
(3) a piece of silicon wafer is separately taken as device layer substrate and structure sheaf substrate bonding and is annealed, mechanical reduction and polisher
Part layer substrate makes it with a thickness of 30~150 μm；The device layer substrate is as structure sheaf substrate size；
(4) in device layer substrate surface successively two kinds of metal layers of alternating growth sound and graphical, Bragg reflecting layer is formed,
Single metal layer is with a thickness of 15~30nm；The Bragg reflecting layer is 10~30 μm smaller than device layer substrate width；And it is placed in sky
Right above chamber；
(5) one layer of molybdenum is grown on step (4) Bragg reflecting layer again, forms seed layer, with a thickness of 160~300nm,
And it is graphical；
(6) one layer of auxiliary layer is grown, on seed layer with a thickness of 300~500nm；The auxiliary layer is Al or Ti；
(7) ScAlN film is grown on auxiliary layer, forms functional layer, with a thickness of 0.8~1.5 μm, photoetching is simultaneously graphical, then
Upper electrode layer is grown with Ir, upper electrode layer is with a thickness of 0.2~0.3 μm；
(8) last to grow one layer of wire bonding auxiliary layer on a functional, with a thickness of 0.6~0.8 μm, photoetching and figure
Change, material Al.
Further, step (4) metal is iridium and aluminium.
Further, it is to corrode SiO2 layers using BHF that the step (2), which forms cavity, TMAH corrosion structure layer substrate；It utilizes
Etch stop when TMAH wet etching forms alignment mark.
Further, step (5) seed layer thickness is 200nm.
Further, the Bragg reflecting layer, seed layer and auxiliary layer growth pattern take magnetron sputtering mode to grow.
Structure sheaf substrate is SiO with thermal oxide growth2Layer is masking layer, above special process layers substrate
Cavity is formed, is combined with Bragg reflecting layer, structure sheaf substrate 2 forms alignment mark below.
The beneficial effects of the present invention are: 1. present invention can overcome traditional sacrificial layer process or back pierced process not
Foot such as easily causes residual or adhesion in cavity to cause device performance substantially to decay；2. aluminium nitride scandium (ScAlN) piezoelectricity is thin
Static D can be improved while holding ALN piezoelectric membrane intrinsic physical attribute in film33Piezoelectric modulus and electromechanical coupling factor,
Using the present invention, when the presence due to Sc element can effectively be overcome to make wet method pattern ScAlN film, electrode surface has residual
It stays so that the defects of device internal resistance increases, and performance declines, improves device performance, such as electromechanical coupling factor and quality factor.
Detailed description of the invention
In order to keep the purpose of the present invention, technical scheme and beneficial effects clearer, the present invention provides following attached drawing and carries out
Illustrate:
Fig. 1 is the structural schematic diagram of silicon substrate ScAlN film GHz resonator；
Fig. 2 is 1 silicon substrate ScAlN film GHz Novel resonator device preparation step 1 of embodiment) schematic diagram；
Fig. 3 is 1 silicon substrate ScAlN film GHz Novel resonator preparation step 2 of embodiment) schematic diagram；
Fig. 4 is 1 silicon substrate ScAlN film GHz Novel resonator preparation step 3 of embodiment) schematic diagram；
Fig. 5 is 1 silicon substrate ScAlN film GHz Novel resonator preparation step 4 of embodiment) schematic diagram；
Fig. 6 is 1 silicon substrate ScAlN film GHz Novel resonator preparation step 5 of embodiment) schematic diagram；
Fig. 7 is 1 silicon substrate ScAlN film GHz Novel resonator preparation step 6 of embodiment) schematic diagram；
Fig. 8 is 1 silicon substrate ScAlN film GHz Novel resonator preparation step 7 of embodiment) schematic diagram.
Specific embodiment
Below in conjunction with attached drawing, a preferred embodiment of the present invention will be described in detail.It is not specified in embodiment specific
The experimental method of condition, usually according to conventional conditions or according to the manufacturer's recommendations.
Example 1:
The preparation method of silicon substrate ScAlN film GHz resonator, specifically includes the following steps:
1) taking 4 inches of N-type silicon chips (100 face) is structure sheaf substrate 2, with a thickness of 300 μm, two-sided thermal oxide structure respectively
Layer substrate 2, makes its upper and lower surface be respectively formed the SiO with a thickness of 200nm2Layer, i.e. upper surface oxide layer and lower surface oxide layer,
Be referred to as oxide layer 3, as shown in Fig. 2, the left side be side structure schematic diagram, the right be from just above see schematic diagram, below together；
2) photoetching, BHF (hydrofluoric acid etch liquid) corrode in top SiO23, TMAH of layer (tetramethylammonium hydroxide) corrodes knot
Structure layer substrate 2 forms cavity (3 μm of depth) above, and cavity width is 600 μm；Lower surface oxide layer and cavity opposite direction shape
At alignment mark (the self-stopping technology characteristic corroded using TMAH), alignment mark is 15 μm wide；As shown in Figure 3；Take 4 inches of N-type silicon chips
(100 face) is used as device layer substrate 1, is bonded with structure sheaf substrate 2, anneals, and is thinned to 40 μm of device layer, polishing, such as Fig. 4 institute
Show；
3) Al/Ir/Al/Ir layers and graphical, formation Bragg reflecting layer, single layer are successively grown on device layer substrate 1
Iridium or aluminum membranous layer are with a thickness of 20nm；One layer of molybdenum is grown on Bragg reflecting layer again, forms seed layer, with a thickness of 200nm, and
Graphically, as shown in Figure 5；
4) the Al layers of auxiliary layer 8 as ScAlN wet method pattern is grown, with a thickness of 350nm, as shown in Figure 6；
5) ScAlN film is grown on auxiliary layer, forms functional layer 9, with a thickness of 0.8~1.5 μm, photoetching is simultaneously graphical, then
Upper electrode layer 7 is grown with Ir, upper electrode layer is with a thickness of 0.2~0.3 μm, as shown in Figure 7；
6) Al layers are grown, photoetching is simultaneously graphical, forms wire bonding auxiliary layer 10, with a thickness of 0.6 μm, as shown in Figure 8.
Alignment mark main function is cavity positioning: when the back side is aligned, identifying the specific location of cavity；
The specific thickness of device layer substrate 1 can be depending on the resonance frequency of design device；
When auxiliary layer effect is mainly wet etching in step (5), ScAlN film can be removed clean.
The silicon substrate ScAlN film GHz resonator structure prepared by embodiment 1 is as shown in Figure 1, from top to bottom successively comprising drawing
Line bonding auxiliary layer 10, upper electrode layer 7, functional layer 9, auxiliary layer 8, seed layer 6, Bragg reflecting layer, device layer substrate 1, oxygen
Change layer 3, structure sheaf substrate 2 and oxide layer 3；The Bragg reflecting layer is alternately formed by metallic aluminum 4 and metal iridium layer 5, institute
It states structure sheaf substrate and device layer substrate forms cavity, Bragg reflecting layer is located at right above cavity, and auxiliary layer is as functional layer
Patterned auxiliary layer and functional layer are disposed in parallel on seed layer.
Device layer substrate and structure sheaf substrate are in the same size；Each metal layer of Bragg reflecting layer and seed layer are in the same size simultaneously
It is narrower than 10~30 μm of device layer substrate；Auxiliary layer as the patterned auxiliary layer of functional layer and functional layer and be listed in seed layer it
On, and the two width is consistent with seed layer, and upper electrode layer and wire bonding auxiliary layer are in the same size and be narrower than 1~10 μ of functional layer
m。
The size of cavity is determined by the thickness of vacuum degree, device layer in cavity.
Wherein, the device layer substrate 1 and structure sheaf substrate 2 use high resistant silicon wafer, and thickness is 300~500 μm, wherein
Device layer substrate thickness is smaller than structure sheaf substrate；
Oxide layer 3 is grown by the way of thermal oxide, with a thickness of 200~350nm；
Bragg reflecting layer is Ir and Al alternating growth, is grown by the way of magnetron sputtering, film thickness uniformity is small
In 1%, thickness in monolayer is 15~30nm；
Auxiliary layer and seed layer are also by the way of magnetron sputtering, auxiliary layer 300~500nm of thickness, seed layer thickness 160
~300nm.
The resonator passes through the combination of Bragg reflecting layer and cavity type structure, sound wave can be inhibited to damage to the maximum extent
Consumption, improves the performance of device.
Example 2:
The preparation method of silicon substrate ScAlN film GHz resonator, specifically includes the following steps:
1) taking 4 inches of N-type silicon chips (100 face) is structure sheaf substrate 2, with a thickness of 500 μm, two-sided thermal oxide structure respectively
Layer substrate 2, makes its upper and lower surface be respectively formed the SiO with a thickness of 250nm2Layer 3；
2) photoetching, BHF corrode in SiO above2Layer 3, TMAH (tetramethylammonium hydroxide) corrosion structure layer substrate 2, above
It is formed cavity (5 μm of depth), cavity width is 800 μm；Lower surface oxide layer forms the alignment mark (automatic stop corroded using TMAH
Only characteristic)；Alignment mark is 15 μm wide；
3) it takes 4 inches of N-type silicon chips (100 face) as device layer substrate 1, is bonded with structure sheaf substrate 2, anneal, be thinned to
100 μm of device layer substrate, polishing；
4) Al/Ir/Al/Ir/Al/Ir layers and graphical, formation Bragg reflection are successively grown on device layer substrate 1
Layer, single layer iridium or aluminum membranous layer are with a thickness of 30nm；One layer of molybdenum is grown on Bragg reflecting layer again, forms seed layer, with a thickness of
300nm, and it is graphical；
5) the Al layers of auxiliary layer as ScAlN wet method pattern is grown, with a thickness of 450nm；
6) ScAlN film is grown on auxiliary layer, forms functional layer, and with a thickness of 0.9 μm, photoetching is simultaneously graphical, then raw with Ir
Long upper electrode layer, upper electrode layer is with a thickness of 0.2 μm；
7) Al layers are grown, photoetching is simultaneously graphical, wire bonding auxiliary layer 10 is formed, with a thickness of 0.3 μm.
Example 3:
The preparation method of silicon substrate ScAlN film GHz resonator, specifically includes the following steps:
1) taking 4 inches of N-type silicon chips (100 face) is structure sheaf substrate 2, with a thickness of 400 μm, two-sided thermal oxide structure respectively
Layer substrate 2, makes its upper and lower surface be respectively formed the SiO with a thickness of 250nm2Layer 3；
2) photoetching, BHF corrode in SiO above2Layer 3, TMAH (tetramethylammonium hydroxide) corrosion structure layer substrate 2, above
It is formed cavity (10 μm of depth), cavity width is 600 μm；Lower surface oxide layer formed alignment mark (using TMAH corrosion from
Stop performance), alignment mark is 10 μm wide；
3) it takes 4 inches of N-type silicon chips (100 face) as device layer substrate 1, is bonded with structure sheaf substrate 2, anneal, be thinned to
150 μm of device layer substrate, polishing；
4) Al/Ir/Al/Ir layers and graphical, formation Bragg reflecting layer, single layer are successively grown on device layer substrate 1
Iridium or aluminum membranous layer are with a thickness of 30nm；One layer of molybdenum is grown on Bragg reflecting layer again, forms seed layer, with a thickness of 200nm, and
Graphically；
5) the Al layers of auxiliary layer as ScAlN wet method pattern is grown, with a thickness of 300nm；
6) ScAlN film is grown on auxiliary layer, forms functional layer, and with a thickness of 1.2 μm, photoetching is simultaneously graphical, then raw with Ir
Long upper electrode layer, upper electrode layer is with a thickness of 0.3 μm；
7) Al layers are grown, photoetching is simultaneously graphical, wire bonding auxiliary layer 10 is formed, with a thickness of 0.5 μm.
Example 4:
The preparation method of silicon substrate ScAlN film GHz resonator, specifically includes the following steps:
1) taking 4 inches of N-type silicon chips (100 face) is structure sheaf substrate 2, with a thickness of 400 μm, two-sided thermal oxide structure respectively
Layer substrate 2, makes its upper and lower surface be respectively formed the SiO with a thickness of 250nm2Layer 3；
2) photoetching, BHF corrode in SiO above2Layer 3, TMAH (tetramethylammonium hydroxide) corrosion structure layer substrate 2, above
It is formed cavity (10 μm of depth), cavity width is 600 μm；Lower surface oxide layer formed alignment mark (using TMAH corrosion from
Stop performance)；Alignment mark is 30 μm wide
3) it takes 4 inches of N-type silicon chips (100 face) as device layer substrate 1, is bonded with structure sheaf substrate 2, anneal, be thinned to
150 μm of device layer substrate, polishing；
4) Al/Ir/Al/Ir/Al/Ir/Al/Ir layers and graphical, formation Prague are successively grown on device layer substrate 1
Reflecting layer, single layer iridium or aluminum membranous layer are with a thickness of 20nm；One layer of molybdenum is grown on Bragg reflecting layer again, forms seed layer, it is thick
Degree is 200nm, and graphical；
5) the Ti layers of auxiliary layer 8 as ScAlN wet method pattern is grown, with a thickness of 300nm；
6) ScAlN film is grown on auxiliary layer, forms functional layer, and with a thickness of 1.2 μm, photoetching is simultaneously graphical, then raw with Ir
Long upper electrode layer 7, upper electrode layer is with a thickness of 0.3 μm；
7) Al layers are grown, photoetching is simultaneously graphical, wire bonding auxiliary layer 10 is formed, with a thickness of 0.5 μm.
Bragg reflecting layer can also by other two kinds of acoustic impedance differences described two metals acoustic impedance difference be 6 ×
106g/cm2s-10×106g/cm2Made of metal within the scope of s is standby, could largely the consume of inhibition sound lose in this way.Prague
Reflecting layer is less than device layer substrate.
In above technical scheme, in addition to N-type silicon chip (100 face), remaining requires different for different bulk acoustic wave devices
Well known to a person skilled in the art silicon wafers can be carried out.
Finally, it is stated that preferred embodiment above is only used to illustrate the technical scheme of the present invention and not to limit it, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (5)
1. the preparation method of silicon substrate ScAlN film GHz resonator, which is characterized in that preparation method is following steps:
(1) taking with a thickness of 300~500 μm of silicon wafer is structure sheaf substrate, and two-sided thermal oxide respectively makes structure sheaf substrate or more
The SiO2 layer that surface is respectively formed with a thickness of 200~350nm, i.e. upper surface oxide layer and lower surface oxide layer；
(2) corrosion is carried out to the structure sheaf substrate after step (1) oxidation and graphically serves as a contrast, surface oxide layer thereon and structure sheaf
Bottom forms cavity, and the opposite direction of lower surface oxide layer forms alignment mark；
(3) a piece of silicon wafer is separately taken as device layer substrate and structure sheaf substrate bonding and is annealed, mechanical reduction and polishing device layer
Substrate makes it with a thickness of 30 ~ 150 μm；The device layer substrate is as structure sheaf substrate size；
(4) in device layer substrate surface successively two kinds of metal layers of alternating growth and graphical, Bragg reflecting layer, single layer of gold are formed
Belong to layer with a thickness of 15 ~ 30nm；The Bragg reflecting layer is 10 ~ 30 μm smaller than device layer substrate width；And be placed in cavity just on
Side；
(5) one layer of molybdenum is grown on step (4) Bragg reflecting layer again, seed layer is formed, with a thickness of 160 ~ 300nm, and schemes
Shape；
(6) one layer of auxiliary layer is grown, on seed layer with a thickness of 300 ~ 500nm；The auxiliary layer is Al or Ti；
(7) ScAlN film is grown on auxiliary layer, forms functional layer, with a thickness of 0.8 ~ 1.5 μm, photoetching is simultaneously graphical, then uses Ir
Upper electrode layer is grown, upper electrode layer is with a thickness of 0.2 ~ 0.3 μm；
(8) last to grow one layer of wire bonding auxiliary layer on a functional, with a thickness of 0.6 ~ 0.8 μm, photoetching simultaneously graphical, material
Matter is Al.
2. the preparation method according to claim 1, which is characterized in that step (4) metal is iridium and aluminium.
3. the preparation method according to claim 1, which is characterized in that it is to utilize hydrogen fluorine that the step (2), which forms cavity,
SiO2 layers of acid corrosion, tetramethylammonium hydroxide corrosion structure layer substrate；When using tetramethylammonium hydroxide wet etching from
Stop corrosion and forms alignment mark.
4. the preparation method according to claim 1, which is characterized in that step (5) seed layer thickness is 200nm.
5. the preparation method according to claim 1, which is characterized in that the Bragg reflecting layer, seed layer and auxiliary
Layer growth pattern takes magnetron sputtering mode to grow.
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| CN110445474A (en) * | 2018-05-04 | 2019-11-12 | 贵州中科汉天下微电子有限公司 | Thin film bulk acoustic wave resonator and its manufacturing method and thin-film bulk acoustic wave filter |
| US10998279B2 (en) | 2018-08-27 | 2021-05-04 | Infineon Technologies Ag | On-chip integrated cavity resonator |
| CN110932694A (en) * | 2019-11-20 | 2020-03-27 | 电子科技大学 | Film bulk acoustic resonator |
| US20240088871A1 (en) * | 2022-09-09 | 2024-03-14 | RF360 Europe GmbH | Microacoustic Filter with a Cavity Stack |
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