CN107240615B - 一种具有非极性吸收层的紫外探测器 - Google Patents
一种具有非极性吸收层的紫外探测器 Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 53
- 238000010521 absorption reaction Methods 0.000 claims abstract description 19
- 238000000926 separation method Methods 0.000 claims abstract description 15
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 105
- 239000000463 material Substances 0.000 claims description 23
- 229910017083 AlN Inorganic materials 0.000 claims description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
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- 229910052710 silicon Inorganic materials 0.000 claims description 3
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- 230000005611 electricity Effects 0.000 claims description 2
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种具有非极性吸收层的紫外探测器,包括:自下而上依次设置的衬底、AlN中间层、非掺杂AlGaN缓冲层、n型AlGaN层、非极性AlxGa1‑xN/AlyGa1‑yN多量子阱吸收分离层、非掺杂AlzGa1‑zN倍增层、p型AlGaN层,在p型AlGaN层上设置的p型欧姆电极,在n型AlGaN层上设置的n型欧姆电极,其中0<x<y<z<1。本发明的有益效果为:从根本上避免吸收层内的极化电场对p‑n结内建电场的补偿作用,提高紫外探测器的光生电流;此外,采用非极性AlxGa1‑xN/AlyGa1‑yN多量子阱作为紫外探测器的吸收层,由于量子效应的作用,因此可以进一步提高紫外探测器对紫外光的吸收系数和横向载流子迁移率,对提高紫外探测器的量子效率和灵敏度具有重大意义。
Description
技术领域
本发明涉及化合物半导体光电子材料与器件制造领域,尤其是一种具有非极性吸收层的紫外探测器。
背景技术
紫外探测在军事和民用领域具有的重要应用价值和广阔的发展前景,如火焰探测、紫外告警与制导、化学和生物分析、紫外天文学研究以及卫星通信等领域。AlGaN材料在制备紫外探测器方面具有巨大的潜力。首先,AlxGa1-xN材料是直接带隙半导体材料,通过调节Al的组分x,可以使其对应的吸收波长在200-365nm之间,恰好覆盖由于臭氧层吸收紫外光而产生的太阳光谱盲区(220-290nm)。同时,AlGaN基紫外探测器还具有体积小、重量轻、寿命长、抗震性好、工作电压低、耐高温、耐腐蚀、抗辐射、量子效率高、无需滤光片等优点。
然而,现有的AlGaN基紫外探测器的量子效率和灵敏度依然很低,其主要原因为制备探测器吸收层的材料是极性材料。如图2所示,由于极性材料制备的吸收层,在垂直于吸收层的方向上存在强度高达MV/cm量级的极化电场,且极化电场的方向与p-n结内建电场的方向相反,因而对内建电场造成补偿,导致吸收层内的净电场减小,使得光生载流子不能被有效收集。此外,当吸收层为极性材料时,会使得吸收层的能带发生倾斜,产生附加势垒,阻碍光生载流子的输运,在极大程度上限制了紫外探测器性能的提高。
为提高紫外探测器的量子效率和灵敏度,现有技术通常采用在吸收层内制作光子晶体或金属纳米颗粒等方法来提高吸收层对光的吸收能力。然而现有技术无法从根本上解决极性材料作为吸收层时极化电场对内建电场的补偿作用所引起的探测器量子效率低的问题。若要从根本上解决此问题,需满足极化电场的方向与p-n结内建电场的方向相同或者垂直的要求,以消除极化电场对内建电场的补偿效应,提高紫外探测器的量子效率和灵敏度。
发明内容
本发明所要解决的技术问题在于,提供一种具有非极性吸收层的紫外探测器,能够有效的提高紫外探测器的量子效率和灵敏度。
为解决上述技术问题,本发明提供一种具有非极性吸收层的紫外探测器,包括:自下而上依次设置的衬底101、AlN中间层102、非掺杂AlGaN缓冲层103、n型AlGaN层104、非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105、非掺杂AlzGa1-zN倍增层106、p型AlGaN层107,在p型AlGaN层107上设置的p型欧姆电极108,在n型AlGaN层104上设置的n型欧姆电极109,其中0<x<y<z<1。
优选地,所述非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105材料可以为(11-20)、(10-10)面等非极性面材料。
优选地,所述衬底101可以为极性、半极性、非极性取向的蓝宝石、碳化硅、硅、氧化锌、氮化镓、氮化铝等材料。
优选地,所述AlN中间层102的厚度为15-5000nm,非掺杂AlGaN缓冲层103的厚度为50-5000nm,n型AlGaN层104的厚度为200-5000nm,非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105的AlxGa1-xN量子阱的阱宽为1-10nm,AlyGa1-yN势垒的垒厚为1-30nm,重复周期数为3-50,非掺杂AlzGa1-zN倍增层106的厚度为100-250nm,p型AlGaN层107的厚度为50-500nm。
优选地,所述非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105和非掺杂AlzGa1- zN倍增层106中Al组分的关系满足:0<x<y<z<1。
优选地,所述非掺杂AlzGa1-zN倍增层106既可为单层AlGaN外延层结构,也可以是AlGaN/AlGaN量子阱结构,其中量子阱的阱宽为1-10nm,垒厚为5-30nm,重复周期数为3-50。
优选地,所述p型欧姆电极108和n型欧姆电极109的材料为Ni、Al、Au、Ag或Ti中的任何一种金属或由以上多种金属构成的合金材料。
本发明的有益效果为:本发明提供的是一种具有非极性吸收层的紫外探测器,由于采用非极性材料作为吸收层的紫外探测器,在垂直于吸收层面的方向上不存在极化电场,因此可以从根本上避免吸收层内的极化电场对p-n结内建电场的补偿作用;同时,因为在非极性吸收层内存在平行于吸收层面的极化电场,可以加大电子和空穴在空间上的分离,因而能够提高紫外探测器的光生电流;此外,采用非极性AlxGa1-xN/AlyGa1-yN多量子阱作为紫外探测器的吸收层,由于量子效应的作用,因此可以进一步提高紫外探测器对紫外光的吸收系数和横向载流子迁移率,对提高紫外探测器的量子效率和灵敏度具有重大意义。
附图说明
图1为本发明具有非极性吸收层的紫外探测器的结构示意图。
图2为现有技术制备的紫外探测器结构示意图。
其中,101、衬底;102、AlN中间层;103、非掺杂AlGaN缓冲层;104、n型AlGaN层;105、非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层;106、非掺杂AlzGa1-zN倍增层;107、p型AlGaN层;108、p型欧姆电极;109、p型欧姆电极;201、衬底;202、AlN中间层;203、非掺杂AlGaN缓冲层;204、n型AlGaN层;205、极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层;206、非掺杂AlzGa1-zN倍增层;207、p型AlGaN层;208、p型欧姆电极;209、n型欧姆电极。
具体实施方式
如图1所示,一种具有非极性吸收层的紫外探测器,包括:自下而上依次设置的衬底101、AlN中间层102、非掺杂AlGaN缓冲层103、n型AlGaN层104、非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105、非掺杂AlzGa1-zN倍增层106、p型AlGaN层107,在p型AlGaN层107上设置的p型欧姆电极108,在n型AlGaN层104上设置的n型欧姆电极109,其中0<x<y<z<1。
非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105材料可以为(11-20)、(10-10)面等非极性面材料。
衬底101可以为极性、半极性、非极性取向的蓝宝石、碳化硅、硅、氧化锌、氮化镓、氮化铝等材料。
AlN中间层102的厚度为15-5000nm,非掺杂AlGaN缓冲层103的厚度为50-5000nm,n型AlGaN层104的厚度为200-5000nm,非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105的AlxGa1-xN量子阱的阱宽为1-10nm,AlyGa1-yN势垒的垒厚为1-30nm,重复周期数为3-50,非掺杂AlzGa1-zN倍增层106的厚度为100-250nm,p型AlGaN层107的厚度为50-500nm。
AlN中间层102的厚度为200nm,非掺杂AlGaN缓冲层103的厚度为500nm,n型AlGaN层104的厚度为2000nm,非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105的AlxGa1-xN量子阱的阱宽为2nm,AlyGa1-yN势垒的垒厚为10nm,重复周期数为10,非掺杂AlzGa1-zN倍增层106的厚度为200nm,p型AlGaN层107的厚度为250nm。
非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层105和非掺杂AlzGa1-zN倍增层106中Al组分的关系满足:0<x<y<z<1。
非掺杂AlzGa1-zN倍增层106既可为单层AlGaN外延层结构,也可以是AlGaN/AlGaN量子阱结构,其中量子阱的阱宽为1-10nm,垒厚为5-30nm,重复周期数为3-50。
非掺杂AlzGa1-zN倍增层106既可为单层AlGaN外延层结构,也可以是AlGaN/AlGaN量子阱结构,其中量子阱的阱宽为2nm,垒厚为10nm,重复周期数为10。
p型欧姆电极108和n型欧姆电极109的材料为Ni、Al、Au、Ag或Ti中的任何一种金属或由以上多种金属构成的合金材料。
p型欧姆电极108材料为Ni/Au合金,n型欧姆电极109材料为Ti/Au合金。
尽管本发明就优选实施方式进行了示意和描述,但本领域的技术人员应当理解,只要不超出本发明的权利要求所限定的范围,可以对本发明进行各种变化和修改。
Claims (7)
1.一种具有非极性吸收层的紫外探测器,其特征在于,包括:自下而上依次设置的衬底(101)、AlN中间层(102)、非掺杂AlGaN缓冲层(103)、n型AlGaN层(104)、非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层(105)、非掺杂AlzGa1-zN倍增层(106)、p型AlGaN层(107),在p型AlGaN层(107)上设置的p型欧姆电极108,在n型AlGaN层(104)上设置的n型欧姆电极(109),其中0<x<y<z<1。
2.如权利要求1所述的具有非极性吸收层的紫外探测器,其特征在于,所述非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层(105)材料为(11-20)、(10-10)面非极性面材料。
3.如权利要求1所述的具有非极性吸收层的紫外探测器,其特征在于,所述衬底(101)为极性、半极性、非极性取向的蓝宝石、碳化硅、硅、氧化锌、氮化镓、氮化铝材料。
4.如权利要求1所述的具有非极性吸收层的紫外探测器,其特征在于,所述AlN中间层(102)的厚度为15-5000nm,非掺杂AlGaN缓冲层(103)的厚度为50-5000nm,n型AlGaN层(104)的厚度为200-5000nm,非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层(105)的AlxGa1-xN量子阱的阱宽为1-10nm,AlyGa1-yN势垒的垒厚为1-30nm,重复周期数为3-50,非掺杂AlzGa1-zN倍增层(106)的厚度为100-250nm,p型AlGaN层(107)的厚度为50-500nm。
5.如权利要求1所述的具有非极性吸收层的紫外探测器,其特征在于,所述非极性AlxGa1-xN/AlyGa1-yN多量子阱吸收分离层(105)和非掺杂AlzGa1-zN倍增层(106)中Al组分的关系满足:0<x<y<z<1。
6.如权利要求1所述的具有非极性吸收层的紫外探测器,其特征在于,所述非掺杂AlzGa1-zN倍增层(106)为单层AlGaN外延层结构,或是AlGaN/AlGaN量子阱结构,其中量子阱的阱宽为1-10nm,垒厚为5-30nm,重复周期数为3-50。
7.如权利要求1所述的具有非极性吸收层的紫外探测器,其特征在于,所述p型欧姆电极(108)和n型欧姆电极(109)的材料为Ni、Al、Au、Ag或Ti中的任何一种金属或由以上多种金属构成的合金材料。
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US9024292B2 (en) * | 2012-06-02 | 2015-05-05 | Xiaohang Li | Monolithic semiconductor light emitting devices and methods of making the same |
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