CN107240551A - A kind of preparation method of silver alloy bonding wire - Google Patents
A kind of preparation method of silver alloy bonding wire Download PDFInfo
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- CN107240551A CN107240551A CN201710413850.8A CN201710413850A CN107240551A CN 107240551 A CN107240551 A CN 107240551A CN 201710413850 A CN201710413850 A CN 201710413850A CN 107240551 A CN107240551 A CN 107240551A
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- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 106
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910052737 gold Inorganic materials 0.000 claims abstract description 49
- 239000010931 gold Substances 0.000 claims abstract description 49
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000000137 annealing Methods 0.000 claims abstract description 31
- 238000007747 plating Methods 0.000 claims abstract description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- 229910001254 electrum Inorganic materials 0.000 claims description 7
- XXOYNJXVWVNOOJ-UHFFFAOYSA-N fenuron Chemical group CN(C)C(=O)NC1=CC=CC=C1 XXOYNJXVWVNOOJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010410 layer Substances 0.000 abstract description 43
- 238000012360 testing method Methods 0.000 abstract description 29
- 230000007774 longterm Effects 0.000 abstract description 7
- 238000010008 shearing Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 230000003712 anti-aging effect Effects 0.000 abstract description 5
- 239000002344 surface layer Substances 0.000 abstract description 5
- 238000009713 electroplating Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 125000001967 indiganyl group Chemical group [H][In]([H])[*] 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0134—Quaternary Alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention provides a kind of preparation method of silver alloy bonding wire, comprise the following steps：By Silver alloy wire surface gold-plating layer, finish draw silk, annealing obtains silver alloy bonding wire；The diameter of the Silver alloy wire and the thickness ratio of Gold plated Layer are 0.1 × 103~1.5 × 103：0.01~0.5；The temperature of the annealing is 200~800 DEG C.The present invention controls the consumption of gold, and heat-treatment of annealing, allows layer gold to be diffused into the outer layer of silver-colored axis so that silver alloy bonding wire is anticorrosive by using Silver alloy wire electroplating surface layer gold, and with long-term bonding reliability；Reflective is good, the good and excellent push-pull effort of pliability.Silver alloy bonding wire is exposed to H2Hot spot is not observed in S, passes through LED reliability testing；After the test for being subjected to the anti-aging equivalent test 10000h in laboratory, certain bond strength is still kept；The pull-off force of silver alloy bonding wire is 8~12g, and shearing force of pushing the ball is 35~45g.
Description
Technical field
The present invention relates to electronic package interconnections Material Field, more particularly to a kind of preparation method of silver alloy bonding wire.
Background technology
The welding more than 80% of semiconductor components and devices is connected using wire bonding, with integrated circuit and semiconductor devices to
High density, high integration and miniaturization, the various fields pair such as war products, smart mobile phone, pilotless automobile, Internet of Things
Semiconductor packaging process, technology, the requirement more and more higher of product quality, bonding wire quality determine the property of IC package product
Energy.Bonding wire is divided into traditional bonding wire and the non-traditional major class of bonding wire two, and traditional bonding wire is by representative of spun gold, property best in quality
Can be reliable, but the monopoly position and occupation rate in market are encapsulated in middle and high end because cost factor seriously governs spun gold, it is non-traditional outstanding
Though it, which is non-traditional high-side bonding wire, has significant cost advantage but substitutes tradition bonding comprehensively because its quality problem governs it
The market of silk and application；The main production of current high-end non-traditional bonding wire is limited only to external a small number of powerful with supplier
Specialised manufacturers, the domestic non-traditional bonding wire of high-quality still belongs to blank out, the market demand almost 100% relative to foreign countries
Dependent on import, seriously restrict and influence the cost control ability and competitiveness, therefore, research and development of domestic encapsulation industry to have
The high-end non-traditional bonding wire of independent intellectual property right has been the task of top priority.
Silver alloy bonding wire in non-traditional bonding wire is mainly used in LED encapsulation, and silver-colored electric spark is in natural air formation ball
(FAB) temperature is excellent bonding material seemingly with metallographic.Due to the easy migration of argent, the easily defect such as vulcanization, oxidizable,
The filamentary silver that is used alone rarer at present is as the interconnection material of Electronic Packaging, and thick gold low temperature again is generally plated in market using filamentary silver surface
The method of annealing evades the defect that silver metal exists in itself.But because needing the golden material of addition mass fraction up to 40%
The defect such as perishable of argent could effectively be alleviated, this technique substantially increases the cost of silver alloy bonding wire, limits it
Extensive use.
The content of the invention
In view of this, it is an object of the invention to provide a kind of preparation method of silver alloy bonding wire, prepared by this method
The anticorrosive and long-term bonding reliability of silver alloy bonding wire.
The invention provides a kind of preparation method of silver alloy bonding wire, comprise the following steps：
By Silver alloy wire surface gold-plating layer, finish draw silk, annealing obtains silver alloy bonding wire；
The diameter of the Silver alloy wire and the thickness ratio of Gold plated Layer are 0.1 × 103~1.5 × 103：0.01~0.5；
The temperature of the annealing is 200~800 DEG C.
Preferably, the thickness ratio of the diameter of the Silver alloy wire and Gold plated Layer is 0.2 × 103~1.0 × 103：0.02~
0.3。
Preferably, the thickness of the Gold plated Layer is 0.02~0.3 μm.
Preferably, the gold-plated rear finish draw silk of the Silver alloy wire is to 0.7~1.2mil of diameter.
Preferably, the temperature of the annealing is 350~800 DEG C.
Preferably, the time of the annealing is 10~180min.
Preferably, the Silver alloy wire includes the palladium of 0~10wt% gold, 0~5wt% copper and 0~5wt%；It is described
It is 0 when gold, copper are different with the content of palladium.
Preferably, the outer layer of the silver alloy bonding wire is electrum layer；The thickness of the electrum layer is 0.05
~0.5 μm.
Preferably, the annealing is carried out under an inert atmosphere.
The invention provides a kind of preparation method of silver alloy bonding wire, comprise the following steps：Silver alloy wire surface is plated
Layer gold, finish draw silk, annealing obtains silver alloy bonding wire；The diameter of the Silver alloy wire and the thickness ratio of Gold plated Layer be 0.1 ×
103~1.5 × 103：0.01~0.5；The temperature of the annealing is 200~800 DEG C.The present invention is by using Silver alloy wire surface
Layer gold is electroplated, the consumption of gold, and heat-treatment of annealing is controlled, allows layer gold to be diffused into the outer layer of silver-colored axis so that silver alloy bonding wire
It is anticorrosive, and with long-term bonding reliability.In addition, silver alloy bonding wire reflective prepared by this method is good, pliability is good
With excellent push-pull effort.Test result indicates that：Silver alloy bonding wire is exposed to H2Hot spot is not observed in S, passes through LED
Reliability testing；After the test for being subjected to the anti-aging equivalent test 10000h in laboratory, certain bond strength is still kept；Silver is closed
The pull-off force of gold bonding silk is 8~12g, and shearing force of pushing the ball is 35~45g.
Brief description of the drawings
Fig. 1 is the schematic diagram that the embodiment of the present invention 1 prepares silver alloy bonding wire process；
Fig. 2 is the FAB of the silver alloy bonding wire prepared without the silver-colored bonding wire and the embodiment of the present invention 1 Jing Guo gold-plated processing
Micrograph and corrosion test result figure.
Embodiment
The invention provides a kind of preparation method of silver alloy bonding wire, comprise the following steps：
By Silver alloy wire surface gold-plating layer, finish draw silk, annealing obtains silver alloy bonding wire；
The diameter of the Silver alloy wire and the thickness ratio of Gold plated Layer are 0.1 × 103~1.5 × 103：0.01~0.5；
The temperature of the annealing is 200~800 DEG C.
The present invention controls the consumption of gold, and heat-treatment of annealing, allows layer gold to expand by using Silver alloy wire electroplating surface layer gold
It is scattered to the outer layer of silver-colored axis so that silver alloy bonding wire is anticorrosive, and with long-term bonding reliability.In addition, party's legal system
Standby silver alloy bonding wire reflective is good, the good and excellent push-pull effort of pliability.
In the present invention, the thickness ratio of the diameter of the Silver alloy wire and Gold plated Layer is 0.1 × 103~1.5 × 103：
0.01~0.5；Preferably 0.2 × 103~1.0 × 103：0.02~0.3.
In the present invention, the thickness of the Gold plated Layer is preferably 0.02~0.3 μm.In a particular embodiment of the present invention,
The thickness of the Gold plated Layer is 0.17 μm or 0.28 μm.
In the present invention, preferably finish draw silk is to 0.7~1.2mil of diameter after the Silver alloy wire is gold-plated.In the tool of the present invention
In body embodiment, preferably finish draw silk is to 21 μm or 30 μm of diameter after the Silver alloy wire is gold-plated.
In the present invention, the temperature of the annealing is 200~800 DEG C, preferably 350~800 DEG C.The time of the annealing
Preferably 10~180min；In a particular embodiment of the present invention, the temperature of the annealing is 350 DEG C or 650 DEG C；It is described to move back
The fiery time is 30min or 60min.
In the present invention, the Silver alloy wire includes the palladium of 0~10wt% gold, 0~5wt% copper and 0~5wt%；
The gold, copper are 0 when different with the content of palladium.In a particular embodiment of the present invention, the Silver alloy wire is by silver-colored 90wt%, gold
5wt%, copper 2wt% and palladium 3wt% compositions；Or the Silver alloy wire is made up of silver-colored 88wt%, gold 10wt% and copper 2wt%；Or
The Silver alloy wire is made up of silver-colored 95wt%, golden 2wt%, copper 2wt% and palladium 1wt%.
In the present invention, the outer layer of the silver alloy bonding wire is electrum layer；The thickness of electrum layer is
0.05~0.5 μm.
In the present invention, the annealing is carried out under an inert atmosphere；The inert atmosphere is preferably nitrogen or argon gas.
The invention provides a kind of preparation method of silver alloy bonding wire, comprise the following steps：Silver alloy wire surface is plated
Layer gold, finish draw silk, annealing obtains silver alloy bonding wire；The diameter of the Silver alloy wire and the thickness ratio of Gold plated Layer be 0.1 ×
103~1.5 × 103：0.01~0.5；The temperature of the annealing is 200~800 DEG C.The present invention is by using Silver alloy wire surface
Layer gold is electroplated, the consumption of gold, and heat-treatment of annealing is controlled, allows layer gold to be diffused into the outer layer of silver-colored axis so that silver alloy bonding wire
It is anticorrosive, and with long-term bonding reliability.In addition, silver alloy bonding wire reflective prepared by this method is good, pliability is good
With excellent push-pull effort.Test result indicates that：Silver alloy bonding wire is exposed to H2Hot spot is not observed in S, passes through LED
Reliability testing；After the test for being subjected to the anti-aging equivalent test 10000h in laboratory, certain bond strength is still kept；Silver is closed
The pull-off force of gold bonding silk is 8~12g, and shearing force of pushing the ball is 35~45g.
The present invention use less golden consumption, control cost on the premise of, improve silver alloy bonding wire corrosion resistance and
Reflective, makes it be had broad application prospects in LED encapsulation fields.
In order to further illustrate the present invention, the preparation side of the silver alloy bonding wire provided with reference to embodiment the present invention
Method is described in detail, but they can not be interpreted as into limiting the scope of the present invention.
Embodiment 1
It is gold-plated in 0.36mm Silver alloy wire (argentiferous 88wt%, golden 10wt%, copper 2wt%) outer layer, control layer gold thickness
For 0.17 μm, then finish draw silk arrives a diameter of 21 μm.Then under 350 DEG C of nitrogen atmospheres, heat treatment 60min is carried out, is plated
Gold and silver based alloy bonding wire, i.e. silver alloy bonding wire.The preparation process schematic diagram of silver alloy bonding wire is as shown in figure 1, Fig. 1 is this
Inventive embodiments 1 prepare the schematic diagram of silver alloy bonding wire process.As seen from Figure 1：In silver-based surface gold-plating layer, by drawing
Silk and annealing process, are made the silver alloy bonding wire that top layer is electrum layer；The surface of the gained silver alloy bonding wire of embodiment 1
Color is suitable with the Silver alloy wire without Gold plated Layer.
Silver alloy bonding wire prepared by testing example 1 and the wire bonding Performance And Reliability of conventional Silver alloy wire, as a result send out
Now the welding effect of plating gold-silver alloy wire is similar to conventional Silver alloy wire, but push-pull effort test result is more excellent, respectively draws
Disconnected power 12g, shearing force of pushing the ball 45g.
The silver alloy bonding wire of no silver-colored bonding wire Jing Guo gold-plated processing and the gained of embodiment 1 is exposed to H2In S,
Corrosion results are as shown in Fig. 2 Fig. 2 is the silver alloy prepared without the silver-colored bonding wire and the embodiment of the present invention 1 Jing Guo gold-plated processing
A is the FAB without the silver-colored bonding wire Jing Guo gold-plated processing in the FAB micrographs and corrosion test result figure of bonding wire, wherein Fig. 2
Micrograph；B is the corrosion test result figure without the silver-colored bonding wire Jing Guo gold-plated processing；C is the silver alloy key of the gained of embodiment 1
The FAB micrographs of plying；D is the corrosion test result figure of the silver alloy bonding wire of the gained of embodiment 1.By Fig. 2 it can be seen that：
After the gold-plated processing of method by the present invention, corrosion resistance is greatly improved, and hot spot is not observed, and passed through LED can
By property test (c and d in Fig. 2).On the contrary, the solder joint of silver-colored bonding wire first not Jing Guo gold-plated processing shows very serious corrosion
(a and b in Fig. 2), not over LED reliability testing.And plating the anticorrosive of gold-silver alloy wire is much higher than conventional silver alloy
Silk., can be to be subjected to laboratory anti-aging equivalent importantly, there is long-term bonding reliability by bonding wire obtained by this method
After the test for testing 10000h, certain bond strength is still kept.
Embodiment 2
It is gold-plated in 0.75mm Silver alloy wire (argentiferous 90wt%, golden 5wt%, copper 2wt%, palladium 3wt%) outer layer, control
Layer gold thickness is 0.28 μm, and then finish draw silk arrives a diameter of 30 μm.Then under 650 DEG C of nitrogen atmospheres, it is heat-treated
60min, obtains silver alloy bonding wire.
Silver alloy bonding wire prepared by testing example 2 and the wire bonding Performance And Reliability of conventional Silver alloy wire, as a result send out
Now the welding effect of plating gold-silver alloy wire is similar to conventional Silver alloy wire, but push-pull effort test result is more excellent, respectively draws
Disconnected power 10g, shearing force of pushing the ball 38g.
The surface color and bonding reliability of the gained silver alloy bonding wire of embodiment 2 are similar to Example 1.
Embodiment 3
It is gold-plated in 0.20mm Silver alloy wire (argentiferous 95wt%, golden 2wt%, copper 2wt%, palladium 1wt%) outer layer, control
Layer gold thickness is 0.17 μm, and then finish draw silk arrives a diameter of 21 μm.Then under 350 DEG C of nitrogen atmospheres, it is heat-treated
30min, obtains silver alloy bonding wire.
Silver alloy bonding wire prepared by testing example 3 and the wire bonding Performance And Reliability of conventional Silver alloy wire, as a result send out
Now the welding effect of plating gold-silver alloy wire is similar to conventional Silver alloy wire, but push-pull effort test result is more excellent, respectively draws
Disconnected power 8g, shearing force of pushing the ball 35g.
The surface color and bonding reliability of the gained silver alloy bonding wire of embodiment 3 are similar to Example 1.
As seen from the above embodiment, the invention provides a kind of preparation method of silver alloy bonding wire, comprise the following steps：
By Silver alloy wire surface gold-plating layer, finish draw silk, annealing obtains silver alloy bonding wire；The diameter and Gold plated Layer of the Silver alloy wire
Thickness ratio be 0.1 × 103~1.5 × 103：0.01~0.5；The temperature of the annealing is 200~800 DEG C.The present invention is by adopting
With Silver alloy wire electroplating surface layer gold, the consumption of gold, and heat-treatment of annealing are controlled, allows layer gold to be diffused into the outer layer of silver-colored axis, makes
Obtain silver alloy bonding wire anticorrosive, and with long-term bonding reliability.In addition, silver alloy bonding wire prepared by this method is reflective
Property it is good, pliability is good and excellent push-pull effort.Test result indicates that：Silver alloy bonding wire is exposed to H2Corruption is not observed in S
Pitting, passes through LED reliability testing；After the test for being subjected to the anti-aging equivalent test 10000h in laboratory, still keep certain
Bond strength；The pull-off force of silver alloy bonding wire is 8~12g, and shearing force of pushing the ball is 35~45g.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (9)
1. a kind of preparation method of silver alloy bonding wire, comprises the following steps：
By Silver alloy wire surface gold-plating layer, finish draw silk, annealing obtains silver alloy bonding wire；
The diameter of the Silver alloy wire and the thickness ratio of Gold plated Layer are 0.1 × 103~1.5 × 103：0.01~0.5；
The temperature of the annealing is 200~800 DEG C.
2. preparation method according to claim 1, it is characterised in that the diameter of the Silver alloy wire and the thickness of Gold plated Layer
Than for 0.2 × 103~1.0 × 103：0.02~0.3.
3. preparation method according to claim 1, it is characterised in that the thickness of the Gold plated Layer is 0.02~0.3 μm.
4. preparation method according to claim 1, it is characterised in that the gold-plated rear finish draw silk of Silver alloy wire to diameter
0.7~1.2mil.
5. preparation method according to claim 1, it is characterised in that the temperature of the annealing is 350~800 DEG C.
6. preparation method according to claim 1, it is characterised in that the time of the annealing is 10~180min.
7. preparation method according to claim 1, it is characterised in that the Silver alloy wire includes 0~10wt% gold, 0
~5wt% copper and 0~5wt% palladium；The gold, copper are 0 when different with the content of palladium.
8. preparation method according to claim 7, it is characterised in that the outer layer of the silver alloy bonding wire is electrum
Layer；The thickness of the electrum layer is 0.05~0.5 μm.
9. preparation method according to claim 1, it is characterised in that the annealing is carried out under an inert atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710413850.8A CN107240551A (en) | 2017-06-05 | 2017-06-05 | A kind of preparation method of silver alloy bonding wire |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710413850.8A CN107240551A (en) | 2017-06-05 | 2017-06-05 | A kind of preparation method of silver alloy bonding wire |
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| CN107240551A true CN107240551A (en) | 2017-10-10 |
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| CN201710413850.8A Pending CN107240551A (en) | 2017-06-05 | 2017-06-05 | A kind of preparation method of silver alloy bonding wire |
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| CN108183075A (en) * | 2017-12-27 | 2018-06-19 | 汕头市骏码凯撒有限公司 | A kind of silver alloy bonding wire and its manufacturing method |
| CN108598006A (en) * | 2017-12-27 | 2018-09-28 | 汕头市骏码凯撒有限公司 | Silver alloy bonding wire and its manufacturing method |
| CN110219029A (en) * | 2019-06-20 | 2019-09-10 | 广东禾木科技有限公司 | A kind of bonding wire cathode passivation protection treatment process |
| CN113430610A (en) * | 2021-07-01 | 2021-09-24 | 广东禾木科技有限公司 | Preparation method of three-plating-layer silver alloy bonding wire |
| US11497098B2 (en) * | 2018-01-12 | 2022-11-08 | Osram Oled Gmbh | Method for controlling a current of a light-emitting diode |
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| CN108183075A (en) * | 2017-12-27 | 2018-06-19 | 汕头市骏码凯撒有限公司 | A kind of silver alloy bonding wire and its manufacturing method |
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| CN110219029A (en) * | 2019-06-20 | 2019-09-10 | 广东禾木科技有限公司 | A kind of bonding wire cathode passivation protection treatment process |
| CN113430610A (en) * | 2021-07-01 | 2021-09-24 | 广东禾木科技有限公司 | Preparation method of three-plating-layer silver alloy bonding wire |
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Application publication date: 20171010 |