CN113430610A - Preparation method of three-plating-layer silver alloy bonding wire - Google Patents
Preparation method of three-plating-layer silver alloy bonding wire Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0607—Wires
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Abstract
The invention is suitable for the field of gold plating, and provides a preparation method of a three-plating-layer silver alloy bonding wire, which comprises the following steps: carrying out rough drawing, semi-fine drawing and fine drawing on the thick silver wire to obtain a silver alloy bonding wire with the required wire diameter; carrying out primary annealing treatment on the drawn bonding wire; carrying out nickel plating on the bonding wire subjected to the first annealing; plating palladium on the surface of the bonding wire after nickel plating; carrying out secondary annealing treatment; carrying out cathode passivation chromium treatment after the second annealing; and (5) cleaning and drying. The corrosion resistance of the silver alloy bonding wire is obviously improved, the silver alloy bonding wire can be preserved for more than one year in a vulcanization environment, and the common silver alloy bonding wire can be stored for about one month; the shearing force in the bonding process is improved, and the shearing force can be up to 38.28gf at present, while the shearing force of the common silver bonding wire is 29.35 gf. The plating layer can be firmly attached to the surface of the silver core and cannot fall off.
Description
Technical Field
The invention belongs to the field of gold plating, and particularly relates to a preparation method of a three-plating-layer silver alloy bonding wire.
Background
bonding is an important step in the manufacture of integrated circuits, and is the operation of connecting circuit chips to lead frames. The bonding wire is a fine-wire inner lead used for electrically connecting an input/output bonding point of an on-chip circuit and an inner contact point of a lead frame when a semiconductor device and an integrated circuit are assembled. The performance of the integrated circuit is directly affected by the bonding effect. The bonding wire is one of five basic materials in the whole IC packaging material market, is an inner lead material with excellent electrical appliance, heat conduction and mechanical properties and excellent chemical stability, is an important structural material for manufacturing integrated circuits and discrete devices, and is mainly used for various electronic components, such as diodes, triodes, integrated circuits and the like.
Silver and silver alloy bonding wires are mainly applied to the LED industry, but the corrosion resistance and the bonding performance of the silver and silver alloy bonding wires are always problems in the industry, and researchers carry out a great deal of research to solve the defects. For example, the palladium-platinum plating mentioned in the patent CN202010260486, and the gold-plated silver-europium alloy mentioned in the patent CN201410235082 are all used to solve these problems.
But the cost price in the prior art is too expensive; the thickness of the plating layer is too thick, the plating layer is easy to fall off, and the adhesiveness is not strong; and the prepared bonding wire has poor vulcanization resistance.
Disclosure of Invention
The embodiment of the invention aims to provide a preparation method of a three-plating silver alloy bonding wire, aiming at solving the problem that the cost price is too high in the prior art; the thickness of the plating layer is too thick, the plating layer is easy to fall off, and the adhesiveness is not strong; and the prepared bonding wire has poor vulcanization resistance.
The embodiment of the invention is realized in such a way that the preparation method of the three-plating silver alloy bonding wire comprises the following steps:
s1, carrying out rough drawing, semi-fine drawing and fine drawing on a thick silver wire to obtain a silver alloy bonding wire with a required wire diameter;
s2, carrying out primary annealing treatment on the drawn bonding wire;
s3, carrying out nickel plating on the bonding wire subjected to the first annealing;
s4, plating palladium on the surface of the nickel-plated bonding wire;
s5, carrying out secondary annealing treatment;
s6, performing cathode passivation chromium treatment after the second annealing;
and S7, cleaning and drying.
According to a further technical scheme, the coarse silver wire comprises 99.991% -99.996% of silver and 0.004% -0.009% of trace elements, the trace elements comprise silver, platinum, calcium and strontium, the wire diameter of the coarse silver wire is 2000-2500 mu m, and the wire diameter of the bonding wire after drawing is 18-50 mu m.
According to the further technical scheme, the first annealing temperature is 400-500 ℃, the annealing speed is 60-70 m/min, and the first annealing treatment is used for eliminating the residual stress of the just-drawn silver bonding wire.
According to the further technical scheme, the purity of nickel plating is 99.99%, the thickness of the nickel plating layer 2 is 0.01-0.1 μm, the electroplating time is 30s, the electroplating temperature is 25 ℃, and the electroplating current density is 4-6A/dm.
According to the further technical scheme, the purity of the palladium plating is 99.99%, the thickness of the palladium plating layer 3 is 0.01-0.1 μm, the plating time is 30s, the plating temperature is 25 ℃, and the plating current density is 4-6A/dm.
According to a further technical scheme, the second annealing temperature is 440-540 ℃, and the annealing speed is 60-70 m/min.
According to the further technical scheme, the thickness of the passivated chromium layer 4 is 0.001-0.01 μm, the passivation time is 10s, the passivation temperature is 25 ℃, and the electroplating current density is 10-16A/dm.
The further technical scheme is that the palladium-plated gold copper wire is placed in ultrapure water, ultrasonic cleaning is carried out firstly, then deionized water is used for carrying out surface cleaning, and drying is carried out, so that the preparation of the silver alloy bonding wire with the three plating layers is completed.
According to the preparation method of the silver alloy bonding wire with the three plating layers, provided by the embodiment of the invention, the thickness of the three plating layers is extremely thin, so that the production cost is greatly reduced; the corrosion resistance of the silver alloy bonding wire is obviously improved, the silver alloy bonding wire can be preserved for more than one year in a vulcanization environment, and the common silver alloy bonding wire can be stored for about one month; 3, the shearing force in the bonding process is improved, the maximum shearing force can be 38.28gf at present, and the shearing force of the common silver bonding wire is 29.35 gf; 4, the plating layer can be firmly attached to the surface of the silver core and cannot fall off.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
In the drawings: 1 silver core, 2 nickel layers, 3 palladium layers and 4 chromium layers.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Specific implementations of the present invention are described in detail below with reference to specific embodiments.
Example one
As shown in fig. 1, a method for preparing a triple-plated silver alloy bonding wire according to an embodiment of the present invention includes the following steps:
s1, carrying out rough drawing, semi-fine drawing and fine drawing on a thick silver wire to obtain a silver alloy bonding wire with a required wire diameter;
s2, carrying out primary annealing treatment on the drawn bonding wire;
s3, carrying out nickel plating on the bonding wire subjected to the first annealing;
s4, plating palladium on the surface of the nickel-plated bonding wire;
s5, carrying out secondary annealing treatment;
s6, performing cathode passivation chromium treatment after the second annealing;
and S7, cleaning and drying.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S1, the coarse silver wire includes 99.991% of silver and 0.004 of trace elements including silver, platinum, calcium and strontium, the wire diameter of the coarse silver wire is 2000 μm, and the wire diameter of the bonding wire after drawing is 18 μm.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S2, the first annealing temperature is 400 deg.c and the annealing speed is 60m/min, and the first annealing process is used to relieve the residual stress of the as-drawn silver bonding wire.
In the embodiment of the invention, the first annealing treatment is to eliminate the residual stress of the just-drawn silver bonding wire and improve the mechanical property of the inner core.
As shown in fig. 1, according to S3, the purity of nickel plating is 99.99%, the thickness of nickel plating layer 2 is 0.01 μm, the plating time is 30S, the plating temperature is 25 ℃, and the plating current density is 4A/dm.
In the embodiment of the invention, the electroplated nickel layer 2 can improve the corrosion-resistant fatigue life of the silver core, and the nickel plating layer has considerable plasticity and can improve the bonding property of other plating layers and the core.
As shown in fig. 1, according to a preferred embodiment of the present invention, according to S4, the purity of the palladium plating is 99.99%, the thickness of the palladium plating layer 3 is 0.01 μm, the plating time is 30S, the plating temperature is 25 ℃, and the plating current density is 4A/dm.
In the embodiment of the invention, the palladium plating layer 3 improves the tensile strength of the silver bonding wire, can effectively reduce the wire breakage rate in the drawing process and improves the production efficiency.
As shown in FIG. 1, as a preferred embodiment of the present invention, according to S5, the second annealing temperature is 440 ℃ and the annealing speed is 60 m/min.
In the embodiment of the invention, the purpose of the second annealing is to reduce the hardness of the whole silver bonding wire, and because the higher hardness of palladium affects the bonding performance of the bonding wire, so that the bonding wire scratches a chip in a routing process, secondary annealing treatment needs to be performed after palladium plating.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S6, the thickness of the passivation chromium layer 4 is 0.001 μm, the passivation time is 10S, the passivation temperature is 25 ℃, and the plating current density is 10A/dm.
In the embodiment of the invention, the chromium coating 4 can improve the sulfuration resistance of the silver bonding wire.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S7, the palladium-plated gold copper wire is placed in ultrapure water, cleaned with ultrasonic waves, then surface-cleaned with deionized water, and dried to complete the preparation of the silver alloy bonding wire with three plating layers.
Example two
A preparation method of a three-coating silver alloy bonding wire comprises the following steps:
s1, carrying out rough drawing, semi-fine drawing and fine drawing on a thick silver wire to obtain a silver alloy bonding wire with a required wire diameter;
s2, carrying out primary annealing treatment on the drawn bonding wire;
s3, carrying out nickel plating on the bonding wire subjected to the first annealing;
s4, plating palladium on the surface of the nickel-plated bonding wire;
s5, carrying out secondary annealing treatment;
s6, performing cathode passivation chromium treatment after the second annealing;
and S7, cleaning and drying.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S1, the coarse silver wire includes 99.996% of silver and 0.009% of trace elements including silver, platinum, calcium and strontium, the wire diameter of the coarse silver wire is 2500 μm, and the wire diameter of the bonding wire after drawing is 50 μm.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S2, the first annealing temperature is 500 deg.c and the annealing speed is 70m/min, and the first annealing process is used to relieve the residual stress of the as-drawn silver bonding wire.
In the embodiment of the invention, the first annealing treatment is to eliminate the residual stress of the just-drawn silver bonding wire and improve the mechanical property of the inner core.
As shown in fig. 1, according to S3, the purity of nickel plating is 99.99%, the thickness of nickel plating layer 2 is 0.1 μm, the plating time is 30S, the plating temperature is 25 ℃, and the plating current density is 6A/dm.
In the embodiment of the invention, the electroplated nickel layer 2 can improve the corrosion-resistant fatigue life of the silver core, and the nickel plating layer has considerable plasticity and can improve the bonding property of other plating layers and the core.
As shown in fig. 1, according to S4, the purity of the palladium plating is 99.99%, the thickness of the palladium plating layer 3 is 0.1 μm, the plating time is 30S, the plating temperature is 25 ℃, and the plating current density is 6A/dm.
In the embodiment of the invention, the palladium plating layer 3 improves the tensile strength of the silver bonding wire, can effectively reduce the wire breakage rate in the drawing process and improves the production efficiency.
As shown in FIG. 1, as a preferred embodiment of the present invention, according to S5, the second annealing temperature is 540 ℃ and the annealing speed is 70 m/min.
In the embodiment of the invention, the purpose of the second annealing is to reduce the hardness of the whole silver bonding wire, and because the higher hardness of palladium affects the bonding performance of the bonding wire, so that the bonding wire scratches a chip in a routing process, secondary annealing treatment needs to be performed after palladium plating.
As shown in FIG. 1, according to S6, the thickness of the passivated Cr layer 4 is 0.001 μm-0.01 μm, the passivation time is 10S, the passivation temperature is 25 ℃, and the plating current density is 10-16A/dm.
In the embodiment of the invention, the chromium coating 4 can improve the sulfuration resistance of the silver bonding wire.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S7, the palladium-plated gold copper wire is placed in ultrapure water, cleaned with ultrasonic waves, then surface-cleaned with deionized water, and dried to complete the preparation of the silver alloy bonding wire with three plating layers.
EXAMPLE III
A preparation method of a three-coating silver alloy bonding wire comprises the following steps:
s1, carrying out rough drawing, semi-fine drawing and fine drawing on a thick silver wire to obtain a silver alloy bonding wire with a required wire diameter;
s2, carrying out primary annealing treatment on the drawn bonding wire;
s3, carrying out nickel plating on the bonding wire subjected to the first annealing;
s4, plating palladium on the surface of the nickel-plated bonding wire;
s5, carrying out secondary annealing treatment;
s6, performing cathode passivation chromium treatment after the second annealing;
and S7, cleaning and drying.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S1, the coarse silver wire includes 99.993% of silver and 0.006% of trace elements including silver, platinum, calcium and strontium, the wire diameter of the coarse silver wire is 2300 μm, and the wire diameter of the bonding wire after drawing is 19 μm.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S2, the first annealing temperature is 450 deg.c and the annealing speed is 65m/min, and the first annealing process is used to relieve the residual stress of the as-drawn silver bonding wire.
In the embodiment of the invention, the first annealing treatment is to eliminate the residual stress of the just-drawn silver bonding wire and improve the mechanical property of the inner core.
As shown in fig. 1, according to S3, the purity of nickel plating is 99.99%, the thickness of nickel plating layer 2 is 0.09 μm, the plating time is 30S, the plating temperature is 25 ℃, and the plating current density is 5A/dm.
In the embodiment of the invention, the electroplated nickel layer 2 can improve the corrosion-resistant fatigue life of the silver core, and the nickel plating layer has considerable plasticity and can improve the bonding property of other plating layers and the core.
As shown in fig. 1, according to a preferred embodiment of the present invention, according to S4, the purity of the palladium plating is 99.99%, the thickness of the palladium plating layer 3 is 0.09 μm, the plating time is 30S, the plating temperature is 25 ℃, and the plating current density is 5A/dm.
In the embodiment of the invention, the palladium plating layer 3 improves the tensile strength of the silver bonding wire, can effectively reduce the wire breakage rate in the drawing process and improves the production efficiency.
As shown in FIG. 1, as a preferred embodiment of the present invention, according to S5, the second annealing temperature is 480 ℃ and the annealing speed is 68 m/min.
In the embodiment of the invention, the purpose of the second annealing is to reduce the hardness of the whole silver bonding wire, and because the higher hardness of palladium affects the bonding performance of the bonding wire, so that the bonding wire scratches a chip in a routing process, secondary annealing treatment needs to be performed after palladium plating.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S6, the thickness of the passivation chromium layer 4 is 0.009 μm, the passivation time is 10S, the passivation temperature is 25 ℃, and the plating current density is 15A/dm.
In the embodiment of the invention, the chromium coating 4 can improve the sulfuration resistance of the silver bonding wire.
As shown in fig. 1, as a preferred embodiment of the present invention, according to S7, the palladium-plated gold copper wire is placed in ultrapure water, cleaned with ultrasonic waves, then surface-cleaned with deionized water, and dried to complete the preparation of the silver alloy bonding wire with three plating layers.
The embodiment of the invention provides a preparation method of a three-plating silver alloy bonding wire, and the thickness of the three-plating is small, so that the production cost is greatly reduced; the corrosion resistance of the silver alloy bonding wire is obviously improved, the silver alloy bonding wire can be preserved for more than one year in a vulcanization environment, and the common silver alloy bonding wire can be stored for about one month; the shear force in the bonding process is improved, the maximum shear force can be 38.28gf at present, the common silver bonding wire is 29.35gf, and the plating layer can be firmly attached to the surface of the silver core and cannot fall off.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A preparation method of a three-plating silver alloy bonding wire is characterized by comprising the following steps:
s1, carrying out rough drawing, semi-fine drawing and fine drawing on a thick silver wire to obtain a silver alloy bonding wire with a required wire diameter;
s2, carrying out primary annealing treatment on the drawn bonding wire;
s3, carrying out nickel plating on the bonding wire subjected to the first annealing;
s4, plating palladium on the surface of the nickel-plated bonding wire;
s5, carrying out secondary annealing treatment;
s6, performing cathode passivation chromium treatment after the second annealing;
and S7, cleaning and drying.
2. The preparation of the triple-plated silver alloy bonding wire according to claim 1, wherein the coarse silver wire comprises 99.991% -99.996% of silver and 0.004-0.009% of trace elements according to S1, the trace elements comprise silver, platinum, calcium and strontium, the wire diameter of the coarse silver wire is 2000-2500 μm, and the wire diameter of the bonding wire after drawing is 18-50 μm.
3. The preparation method of the silver alloy bonding wire with the triple plating layer according to claim 1, wherein according to S2, the first annealing temperature is 400 ℃ to 500 ℃, the annealing speed is 60m/min to 70m/min, and the first annealing treatment is used for eliminating the residual stress of the silver bonding wire which is just drawn.
4. The preparation method of the triple-plated silver alloy bonding wire according to claim 1, wherein according to S3, the purity of the nickel plating is 99.99%, the thickness of the nickel plating is 0.01-0.1 μm, the electroplating time is 30S, the electroplating temperature is 25 ℃, and the electroplating current density is 4-6A/dm.
5. The preparation method of the triple-plated silver alloy bonding wire according to claim 4, wherein according to S4, the purity of the palladium plating is 99.99%, the thickness of the palladium plating layer is 0.01-0.1 μm, the plating time is 30S, the plating temperature is 25 ℃, and the plating current density is 4-6A/dm.
6. The method for preparing the silver alloy bonding wire with the triple plating layer according to claim 1, wherein the second annealing temperature is 440-540 ℃ and the annealing speed is 60-70 m/min according to S5.
7. The preparation of the triple-plated silver alloy bonding wire according to claim 1, wherein according to S6, the thickness of the passivated chromium layer is 0.001-0.01 μm, the passivation time is 10S, the passivation temperature is 25 ℃, and the plating current density is 10-16A/dm.
8. The method for preparing the triple-plated silver alloy bonding wire according to claim 7, wherein the palladium-gold-plated copper wire is placed in ultrapure water according to S7, and is subjected to ultrasonic cleaning, deionized water surface cleaning and drying, so that the triple-plated silver alloy bonding wire is prepared.
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2021
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