CN107238382A - A kind of silicon micro-gyroscope differential capacitance detection circuit - Google Patents
A kind of silicon micro-gyroscope differential capacitance detection circuit Download PDFInfo
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- CN107238382A CN107238382A CN201710364521.9A CN201710364521A CN107238382A CN 107238382 A CN107238382 A CN 107238382A CN 201710364521 A CN201710364521 A CN 201710364521A CN 107238382 A CN107238382 A CN 107238382A
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- analog switch
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5776—Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
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Abstract
The invention discloses a kind of silicon micro-gyroscope differential capacitance detection circuit, analog switch, reference capacitance and the differential operational amplifier connected including square-wave generator, bridge architecture, square-wave generator one end is grounded, the other end connects silicon micro-gyroscope differential capacitance to be detected, the analog switch of silicon micro-gyroscope differential capacitance connection bridge architecture connection to be detected, and the analog switch that reference capacitance and differential operational amplifier are connected with bridge architecture is connected.A kind of silicon micro-gyroscope differential capacitance detection circuit of the present invention, it is simple and practical, the detection of the sensitive differential capacitance of silicon micro-gyroscope can be effectively realized, the signal detection sensitivity of silicon micro-gyroscope is improved.
Description
Technical field
The present invention relates to silicon micro-gyroscope technical field, specifically a kind of silicon micro-gyroscope differential capacitance detection circuit.
Background technology
Silicon micromechanical gyroscope is MEMS technology in one of the important application in inertial navigation field, and it is former using Coriolis effect
Manage to measure the input angle speed of sensitive axes.Compared to conventional gyro, it have small volume, lightweight, cost it is low, can batch
The advantages of producing, be easily integrated, these features of Mierotubule-associated proteins cause it to have broader application, can not only use
In civil areas such as automobile engineering, mobile communication, geodesic survey, geological prospecting, micro-satellite, sports equipments, it can also apply
In military field, including guided bomb, unmanned machine smart bombs etc..
The driven-mode of silicon micro-gyroscope produces electrostatic drive power using alternating voltage is applied on the two-plate of electric capacity,
So that it produces the mechanical oscillation along driving direction；When there is turning rate input, the coriolis force of generation causes sensed-mode to exist
Vibrated on the direction orthogonal with driving direction, input can be obtained by by the extraction to vibration displacement signal and subsequent treatment
Angular velocity signal.Realized in silicon micro-gyroscope micro mechanical structure more than the detection of displacement using differential capacitance mode, interface circuit leads to
Completion electric capacity/voltage conversion is crossed to realize the detection to sensitive displacement, but be due to microthrust test lighter weight, vibration velocity compared with
It is low, cause change in displacement very small by Coriolis effect, cause Differential Detection capacitance change 10-18F magnitudes are even more small,
Electric capacity relative variation Δ C/C is 10-8Magnitude, and the parasitic capacitance of surrounding environment is between hundreds of fF to several pF, and post
Raw capacitance network is complicated, can introduce various interference signals, therefore silicon micro-gyroscope output signal is highly susceptible to various make an uproar
The influence of sound and interference signal.Therefore, silicon micro-gyroscope electromechanical interface needs a kind of high performance differential capacitance detection circuit.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention provides a kind of silicon micro-gyroscope differential electrical
Hold detection circuit.
Technical scheme：In order to solve the above technical problems, a kind of silicon micro-gyroscope differential capacitance detection circuit of the present invention, bag
Include square-wave generator, analog switch, reference capacitance and the differential operational amplifier of bridge architecture connection, square-wave generator one end
Ground connection, the other end connects silicon micro-gyroscope differential capacitance to be detected, and silicon micro-gyroscope differential capacitance to be detected connects bridge architecture
The analog switch of connection, and the analog switch that reference capacitance and differential operational amplifier are connected with bridge architecture is connected；
Square-wave generator, for producing square wave voltage signal；
The analog switch of bridge architecture connection, in square wave positive and negative half period switching circuit state, forms corresponding discharge and recharge
Loop；
Reference capacitance, for the storage and accumulation of electric charge in square wave positive and negative half period charge and discharge process, and is formed and difference
The related voltage signal of capacitance change；
Differential operational amplifier, for being exported after the voltage signal on reference capacitance is made the difference.
Wherein, square-wave generator one end is connected to the ground, the common port of the other end and the sensitive differential capacitance of the silicon micro-gyroscope
It is connected.
Wherein, the analog switch of bridge architecture connection includes the first analog switch, the second analog switch, the 3rd analog switch
And the 4th analog switch, first analog switch one end is connected with one end of the second analog switch, the other end and the 4th analog switch
One end be connected；The other end of second analog switch is connected with one end of the 3rd analog switch；The other end of 3rd analog switch
It is connected with the other end of the 4th analog switch.
Wherein, the connection end phase of silicon micro-gyroscope sensitive differential capacitance separate end and the first analog switch and the second analog switch
Even, differential capacitance separate end is connected with the connection end of the 3rd analog switch and the 4th analog switch.
Wherein, reference capacitance includes the first reference capacitance and the second reference capacitance, one end of the first reference capacitance and the 4th
The connection end of analog switch and the first analog switch is connected, and is connected with the inverting input of difference amplifier, and first with reference to electricity
The other end of appearance is connected to the ground；One end of second reference capacitance and the connection end phase of the second analog switch and the 3rd analog switch
Even, and it is connected with the in-phase input end of difference amplifier.
Beneficial effect：A kind of silicon micro-gyroscope differential capacitance detection circuit of the present invention, has the advantages that：
(1) no signal modulation and demodulation process, circuit structure is simple, reduces circuit and implements requirement to device；
(2) electric circuit inspection sensitivity and the quiescent value of the sensitive differential capacitance of silicon micro-gyroscope are inversely proportional, and silicon micro-gyroscope is poor
Divide electric capacity quiescent value generally 10-12F magnitudes, therefore with higher detection sensitivity, it is particularly suitable for silicon micro-gyroscope poor
Divide capacitance detecting；
(3) signal is exported through difference amplifier, can effective suppression common mode noise.
In summary, differential capacitance detection circuit structure proposed by the present invention is simple and practical, can effectively realize silicon micro-gyroscope
The detection of instrument sensitivity differential capacitance, improves the signal detection sensitivity of silicon micro-gyroscope.
Brief description of the drawings
Fig. 1 is embodiment of the present invention differential capacitance detection circuit diagram；
Fig. 2 is voltage curve on the first reference capacitance and the second reference capacitance of embodiment of the present invention；
Fig. 3 is that difference amplifier corresponding with the second reference capacitance voltage curve with the first reference capacitance in Fig. 2 exports electricity
Buckle line.
Embodiment
The present invention is further described below in conjunction with the accompanying drawings.
As shown in figure 1, a kind of silicon micro-gyroscope differential capacitance detection circuit of the present invention, including for producing square-wave voltage
The square-wave generator V of signalref, in square wave positive and negative half period switching circuit state, form the bridge-type knot of corresponding charging and discharging circuit
The analog switch of structure connection, storage and accumulation for electric charge in square wave positive and negative half period charge and discharge process, and formed and difference
The reference capacitance of the related voltage signal of capacitance change, and for being exported after the voltage signal on reference capacitance is made the difference
Differential operational amplifier, square-wave generator one end ground connection, the other end connects silicon micro-gyroscope differential capacitance to be detected, silicon to be detected
The analog switch of gyroscope differential capacitance connection bridge architecture connection, and reference capacitance and differential operational amplifier are and bridge
The analog switch of formula structure connection is connected.Square-wave generator VrefOne end is connected to the ground, and the other end is sensitive with the silicon micro-gyroscope
The common port of differential capacitance is connected.The analog switch of bridge architecture connection includes the first analog switch S1, the second analog switch S2、
3rd analog switch S3And the 4th analog switch S4, the first analog switch S1One end and the second analog switch S2One end be connected, separately
One end and the 4th analog switch S4One end be connected；Second analog switch S2The other end and the 3rd analog switch S3One end phase
Even；3rd analog switch S3The other end and the 4th analog switch S4The other end be connected.Silicon micro-gyroscope sensitivity differential capacitance is independent
End and the first analog switch S1With the second analog switch S2Connection end be connected, differential capacitance C1And C2Separate end and the 3rd simulation
Switch S3With the 4th analog switch S4Connection end be connected.Reference capacitance includes the first reference capacitance C3With the second reference capacitance C4,
First reference capacitance C3One end and the 4th analog switch S4With the first analog switch S1Connection end be connected, and and differential amplification
The inverting input of device is connected, the first reference capacitance C3The other end be connected to the ground；Second reference capacitance C4One end and the second mould
Intend switch S2With the 3rd analog switch S3Connection end be connected, and with difference amplifier A0In-phase input end be connected.
Specifically, as shown in figure 1, square-wave generator VrefOne end is connected to the ground, and the other end is sensitive poor with the silicon micro-gyroscope
Divide electric capacity C1And C2Common port be connected.First analog switch S1One end and the second analog switch S2One end be connected, the other end with
4th analog switch S4One end be connected；Second analog switch S2The other end and the 3rd analog switch S3One end be connected；3rd
Analog switch S3The other end and the 4th analog switch S4The other end be connected.
Differential capacitance C1Separate end is connected with the connection end of the first analog switch and the second analog switch, differential capacitance C2Solely
Vertical end and the 3rd analog switch S3With the 4th analog switch S4Connection end be connected.
First reference capacitance C3One end and the 4th analog switch S4With the first analog switch S1Connection end be connected, and with
Difference amplifier A0Inverting input be connected, the first reference capacitance C3The other end be connected to the ground；Second reference capacitance C4One
End and the second analog switch S2With the 3rd analog switch S3Connection end be connected, and with difference amplifier A0In-phase input end phase
Even.
Operation principle of the present invention：
With reference to Fig. 1, C in figure1、C2For silicon micro-gyroscope differential capacitance, and there is C1=C0+ΔC、C2=C0- Δ C, wherein C0For
The quiescent value of differential capacitance, Δ C is differential capacitance variable quantity, the first reference capacitance C3, the second reference capacitance C4Capacitance size is
C.Square-wave generator VrefThe square wave amplitude of generation is V, and frequency is Mhz magnitudes.In the positive half cycle of square wave, the second analog switch S2,
Four analog switch S4Conducting, voltage V passes through electric capacity C1To the second reference capacitance C4Charging, passes through electric capacity C2To the first reference capacitance C3
Charging, electric capacity C1、C2The electric charge of upper storage respectively with the second reference capacitance C4, the first reference capacitance C3The charging neutrality of upper storage
After redistribute；In the negative half period of square wave, the first analog switch S1, the 3rd analog switch S3Conducting, voltage-V passes through electric capacity C1It is right
First reference capacitance C3Electric discharge, passes through electric capacity C2To the second reference capacitance C4Electric discharge, C1、C2The electric charge of upper storage is joined with first respectively
Examine electric capacity C3, the second reference capacitance C4Redistributed after upper original charging neutrality.In this process, analog switch is in square wave
Positive half period and negative half-cycle switching state.After multiple square-wave cycles, the first reference capacitance C3, the second reference capacitance C4On
Voltage will gradually tend towards stability, differential operational amplifier output accordingly tend towards stability.Fig. 2 illustrates differential capacitance variable quantity
During Δ C, the first reference capacitance C3, the second reference capacitance C4The change of output voltage, Fig. 3 illustrates corresponding difference amplifier A0
The change of output voltage.
In the positive half period in n-th of cycle of square wave, the second analog switch S2, the 4th analog switch S4Closure, the first simulation is opened
Close S1, the 3rd analog switch S3Disconnect, then Differential Detection electric capacity C1、C2, the first reference capacitance C3, the second reference capacitance C4On now
The quantity of electric charge be respectively equal to the quantity of electric charge of each electric capacity at the end of (n-1)th carrier wave negative half-cycle.Consider the second analog switch S2,
Four analog switch S4Stable state after closure, electric capacity C1With the second reference capacitance C4, electric capacity C2With the first reference capacitance C3Composition closure
Loop, electric charge and voltage can be expressed as：
In formula (A1), Q1- (n-1) is electric capacity C at the end of (n-1)th carrier wave negative half-cycle1The quantity of electric charge of upper storage, Q2-
(n-1) it is electric capacity C at the end of (n-1)th carrier wave negative half-cycle2The quantity of electric charge of upper storage, Q3- (n-1) is (n-1)th carrier wave negative half
First reference capacitance C during end cycle3The quantity of electric charge of upper storage, Q4- (n-1) is second at the end of the (n-1)th carrier wave negative half-cycle
Reference capacitance C4The quantity of electric charge of upper storage, vA+(n) voltage after stable state at point A is reached for the positive half cycle circuit of n-th carrier cycle,
vB+(n) voltage after stable state at point B, v are reached for the positive half cycle circuit of n-th carrier cycleC+(n) it is n-th carrier cycle just half
All circuits reach the voltage at point C, v after stable stateD+(n) electricity after stable state at point D is reached for the positive half cycle circuit of n-th carrier cycle
Pressure, Q1+(n) C at the end of the positive half cycle in n-th of cycle1The electric charge of upper storage, Q2+(n) C at the end of the positive half cycle in n-th of cycle2
The electric charge of upper storage, Q3+(n) the first reference capacitance C at the end of the positive half cycle in n-th of cycle3The electric charge of upper storage, Q4+(n) n-th
Second reference capacitance C at the end of the positive half cycle in individual cycle4The electric charge of upper storage.
In the negative half-cycle in n-th of cycle of square wave, the first analog switch S1, the 3rd analog switch S3Closure, the second simulation is opened
Close S2, the 4th analog switch S4Disconnect, then Differential Detection electric capacity C1、C2, the first reference capacitance C3, the second reference capacitance C4On now
The quantity of electric charge be respectively equal to the quantity of electric charge of each electric capacity at the end of n-th of carrier wave positive half period.Consider the first analog switch S1, the 3rd
Analog switch S3Stable state after conducting, electric capacity C1With the first reference capacitance C3, electric capacity C2With the second reference capacitance C4Composition is closed back
Road, electric charge and voltage can be expressed as：
In formula (A2), Q1- (n) is electric capacity C at the end of n-th of carrier wave negative half-cycle1The quantity of electric charge of upper storage, Q2-(n) it is
Electric capacity C at the end of n-th of carrier wave negative half-cycle2The quantity of electric charge of upper storage, Q3- (n) is the at the end of n-th carrier wave negative half-cycle
One reference capacitance C3The quantity of electric charge of upper storage, Q4-(n) it is the second reference capacitance C at the end of n-th of carrier wave negative half-cycle4Upper storage
The quantity of electric charge, vA-(n) voltage after stable state at point A, v are reached for n-th carrier cycle negative half period circuitB-(n) carried for n-th
Wave period negative half period circuit reaches the voltage at point B, v after stable stateC-(n) stable state is reached for n-th carrier cycle negative half period circuit
Voltage at point C, v afterwardsD-(n) voltage after stable state at point D, Q are reached for n-th carrier cycle negative half period circuit1+(n) n-th
C at the end of the positive half cycle in cycle1The electric charge of upper storage, Q2+(n) C at the end of the positive half cycle in n-th of cycle2The electric charge of upper storage,
Q3+(n) the first reference capacitance C at the end of the positive half cycle in n-th of cycle3The electric charge of upper storage, Q4+(n) the positive half cycle in n-th of cycle
At the end of the second reference capacitance C4The electric charge of upper storage.
It can be drawn by the iterative calculation analysis to formula A1 and formula A2：
Q is the common ratio of geometric sequence, and has
Accordingly, it is considered to the initial value of the geometric sequence.During n=1, the initial charge amount on positive half period, each electric capacity is equal
For 0, then have：
In formula (A6), Q1+(1) it is electric capacity C at the end of the 1st carrier wave negative half-cycle1The quantity of electric charge of upper storage, Q2+(1) it is the
Electric capacity C at the end of 1 carrier wave negative half-cycle2The quantity of electric charge of storage, Q3+First reference at the end of the positive half cycle in (1) the 1st cycle
Electric capacity C3The electric charge of upper storage, Q4+Second reference capacitance C at the end of the positive half cycle in (1) the 1st cycle4The electric charge of upper storage.Q1
(0) it is the first reference capacitance C before application carrier wave3The quantity of electric charge of upper storage, Q4(0) it is the second reference capacitance before application carrier wave
C4The quantity of electric charge of upper storage, vA+(1) voltage after stable state at point A, v are reached for the 1st subcarrier cycle positive half cycle circuitB+(1) it is
1st subcarrier cycle, positive half cycle circuit reached the voltage after stable state at point B, vC+(1) reached for the 1st subcarrier cycle positive half cycle circuit
Voltage after to stable state at point C, vD+(1) voltage after stable state at point D is reached for the 1st subcarrier cycle positive half cycle circuit.
Tried to achieve according to above formula：
Similarly, during n=2, it can try to achieve：
Therefore：
Due to vB+(3)-vB+(2)、……vB+(n+1)-vB+(n) into Geometric Sequence, its preceding n sum is：
Then
According to formula A (10) and formula A (11), for Differential Detection electric capacity and initial shape that reference capacitance initial charge amount is 0
State, by multiple square-wave cycles, as n →+∞, positive the first reference capacitance of the half cycle C of square wave3Upper voltage is：
In formula (12), vB+(+∞) is positive the first reference capacitance of the half cycle C of square wave3Magnitude of voltage after upper voltage stabilization.
The first reference capacitance of square wave negative half period C3On voltage stabilization after value be：
In formula (13), vB-(+∞) is the first reference capacitance of square wave negative half period C3Magnitude of voltage after upper voltage stabilization.
Similarly, it can be deduced that the second reference capacitance C4Value after upper voltage stabilization is：
In formula (14), vD+(+∞) is the positive half cycle C of square wave4Magnitude of voltage after upper voltage stabilization, vD-(+∞) is square wave negative half
The second reference capacitance C of week4Magnitude of voltage after upper voltage stabilization.
Therefore, as the first reference capacitance C3, the second reference capacitance C4During upper voltage stabilization, difference amplifier is output as：
C1=C0+ Δ C, C2=C0- Δs C substitution above formulas can be obtained：
In formula, VoutFor difference amplifier output voltage signal.
Generally obtain Δ C<<C0<<C, then above formula can abbreviation be：
In formula (17), VoutFor difference amplifier output voltage signal.
I.e. as differential capacitance C1、C2When variable quantity is Δ C, the output voltage signal of the detection circuit is Vout, its value with it is poor
The variation delta C of electric capacity is divided to be directly proportional, so that silicon micro-gyroscope can be obtained according to differential operational amplifier output voltage size
Differential capacitance variable quantity.
Described above is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (5)
1. a kind of silicon micro-gyroscope differential capacitance detection circuit, it is characterised in that：Connected including square-wave generator, bridge architecture
Analog switch, reference capacitance and differential operational amplifier, square-wave generator one end ground connection, the other end connect the micro- top of silicon to be detected
Spiral shell instrument differential capacitance, the analog switch of silicon micro-gyroscope differential capacitance to be detected connection bridge architecture connection, and reference capacitance with
And the analog switch that differential operational amplifier is connected with bridge architecture is connected；
Square-wave generator, for producing square wave voltage signal；
The analog switch of bridge architecture connection, in square wave positive and negative half period switching circuit state, forms corresponding charging and discharging circuit；
Reference capacitance, for the storage and accumulation of electric charge in square wave positive and negative half period charge and discharge process, and is formed and differential capacitance
The related voltage signal of variable quantity；
Differential operational amplifier, for being exported after the voltage signal on reference capacitance is made the difference.
2. a kind of silicon micro-gyroscope differential capacitance detection circuit according to claim 1, it is characterised in that：Wherein, square wave
Generator one end is connected to the ground, and the other end is connected with the common port of the sensitive differential capacitance of the silicon micro-gyroscope.
3. a kind of silicon micro-gyroscope differential capacitance detection circuit according to claim 1, it is characterised in that：Wherein, bridge-type
The analog switch of structure connection includes the first analog switch, the second analog switch, the 3rd analog switch and the 4th analog switch, the
One analog switch one end is connected with one end of the second analog switch, and the other end is connected with one end of the 4th analog switch；Second mould
The other end for intending switch is connected with one end of the 3rd analog switch；The other end of 3rd analog switch is another with the 4th analog switch
One end is connected.
4. a kind of silicon micro-gyroscope differential capacitance detection circuit according to claim 3, it is characterised in that：Wherein, silicon is micro-
Gyro sensitivity differential capacitance separate end is connected with the connection end of the first analog switch and the second analog switch, differential capacitance separate end
It is connected with the connection end of the 3rd analog switch and the 4th analog switch.
5. a kind of silicon micro-gyroscope differential capacitance detection circuit according to claim 3, it is characterised in that：Wherein, refer to
Electric capacity includes the first reference capacitance and the second reference capacitance, one end of the first reference capacitance and the 4th analog switch and the first simulation
The connection end of switch is connected, and is connected with the inverting input of difference amplifier, and the other end of the first reference capacitance is connected to the ground；
One end of second reference capacitance is connected with the second analog switch with the connection end of the 3rd analog switch, and same with difference amplifier
Phase input is connected.
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| CN109818604A (en) * | 2019-04-03 | 2019-05-28 | 江苏集萃微纳自动化系统与装备技术研究所有限公司 | A kind of high-precision difference capacitor MEMS interface circuit and MEMS device |
| CN110470291A (en) * | 2019-09-04 | 2019-11-19 | 中国海洋大学 | A kind of MEMS resonant formula gyroscope interface circuit and TT&C system |
| CN111307026A (en) * | 2019-11-11 | 2020-06-19 | 华中科技大学 | Charge-discharge type capacitive sensor based on diode switch |
| CN111879303A (en) * | 2020-06-16 | 2020-11-03 | 深迪半导体(上海)有限公司 | Capacitive MEMS gyroscope and method for accelerating oscillation starting speed thereof |
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