CN107234309A - Metallized ceramic structure and its manufacture method and magnetron for soldering - Google Patents
Metallized ceramic structure and its manufacture method and magnetron for soldering Download PDFInfo
- Publication number
- CN107234309A CN107234309A CN201710271292.6A CN201710271292A CN107234309A CN 107234309 A CN107234309 A CN 107234309A CN 201710271292 A CN201710271292 A CN 201710271292A CN 107234309 A CN107234309 A CN 107234309A
- Authority
- CN
- China
- Prior art keywords
- layer
- solder
- nickel dam
- soldering
- molybdenum manganese
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses a kind of metallized ceramic structure for soldering, it includes body layer and metal layer, metal layer is covered on the surface of body layer, metal layer is combined closely with body layer, metal layer includes molybdenum manganese layer, nickel dam and solder layer, molybdenum manganese layer connection body layer and nickel dam, nickel dam connection molybdenum manganese layer and solder layer, nickel dam is combined closely with molybdenum manganese layer, nickel dam is combined closely with solder layer, molybdenum manganese layer separates body layer and nickel dam, and nickel dam separates molybdenum manganese layer and solder layer, and solder alloy for soldering of the solder layer by fusing point less than molybdenum manganese layer and nickel dam is constituted.So when metallized ceramic structure and kovar alloy carry out soldering, it may be unnecessary to solder is manually placed, so that the automatic assembling of metallized ceramic structure and kovar alloy can be realized, so as to reduce the influence of the human factor in assembling process.In addition, the invention also discloses a kind of method for manufacturing above-mentioned metallized ceramic structure and including the magnetron of above-mentioned metallized ceramic structure.
Description
Technical field
The present invention relates to ceramics and solder bonding metal field, more particularly, to a kind of metallized ceramic structure for soldering and
Its manufacture method and magnetron.
Background technology
In the related art, the negative electrode of magnetron and output precision are main by aluminium oxide ceramics and kovar alloy soldering
Into when carrying out aluminium oxide ceramics with kovar alloy assembling, needs are artificial places solder, so easily goes out because of human factor
Existing failure welding phenomenon.
The content of the invention
It is contemplated that at least solving one of technical problem present in correlation technique.Therefore, the present invention needs offer one
Plant the metallized ceramic structure and its manufacture method and magnetron for soldering.
The manufacture method of the metallized ceramic structure for soldering of embodiment of the present invention, including：
Body layer progress metalized is sequentially formed into molybdenum manganese layer and nickel dam with the surface in the body layer；
Fusing point is coated in the table of the nickel dam less than the solder alloy for soldering of molybdenum manganese layer and the nickel dam
To form pre- solder layer on face；
The pre- solder layer is dried；
The pre- solder layer is sintered to form solder layer.
By embodiment of the present invention manufacture method manufacture for soldering metallized ceramic structure and including for
In the magnetron of the metallized ceramic structure of soldering, due to metal layer include solder layer, so metallized ceramic structure with
When kovar alloy carries out soldering, it may be unnecessary to manually place solder, so that metallized ceramic structure and kovar alloy can be realized
Automatic assembling, so as to reduce the influence of the human factor in assembling process, improves the stability of welding procedure, so as to drop
Low failure welding rate.
In some embodiments, body layer is being carried out metalized with the body layer by the manufacture method
It is further comprising the steps of before the step of surface sequentially forms molybdenum manganese layer and nickel dam：The body layer is inserted in continuous tunnel furnace and burnt
Knot, the scope for the temperature being sintered in the continuous tunnel furnace to the body layer is at 1500 DEG C~1650 DEG C.
In some embodiments, body layer is being carried out metalized with the body layer by the manufacture method
It is further comprising the steps of in the step of surface sequentially forms molybdenum manganese layer and nickel dam：Molybdenum manganese paste is applied by the method for silk-screen printing
Overlay on the surface of the body layer to form pre- molybdenum manganese layer, then enter to enter in the stove of reducing atmosphere by the pre- molybdenum manganese stratification
Row sintering is to form molybdenum manganese layer, then in the plating nickel on surface of molybdenum manganese layer to form the nickel dam.
In some embodiments, the manufacture method by fusing point less than the molybdenum manganese layer and the nickel dam be used for pricker
It is further comprising the steps of in the step of solder alloy of weldering is coated on the surface of the nickel dam to form pre- solder layer：Utilize work
Clamps are positioned to multiple body layers, then the solder alloy is coated in into the nickel by the method for silk-screen printing
To form the pre- solder layer on layer.
In some embodiments, the manufacture method in the step of being dried the pre- solder layer also include with
Lower step：The pre- solder layer is inserted and dried in the Muffle furnace of reducing atmosphere, the pre- solder layer is dried
Temperature scope at 200 DEG C~300 DEG C.
In some embodiments, the pre- solder layer is being sintered to form the step of solder layer by the manufacture method
It is further comprising the steps of in rapid：The pre- solder layer is inserted and is sintered in the Muffle furnace protected by reducibility gas, to institute
The scope for the temperature that pre- solder layer is sintered is stated at 700 DEG C~850 DEG C.
In some embodiments, the reducibility gas includes hydrogen, the temperature being sintered to the pre- solder layer
Scope at 750 DEG C~800 DEG C, the scope for the time being sintered to the pre- solder layer is in 20min~30min.
In some embodiments, the solder alloy includes the copper in yellow gold material, the yellow gold material
The mass percent for accounting for the yellow gold material is 27%~29%.
In some embodiments, the scope of the thickness of the solder layer is in 1um~60um.
The metallized ceramic structure for soldering of embodiment of the present invention includes body layer and metal layer, the metal
Change layer to be covered on the surface of the body layer, the metal layer is combined closely with the body layer, the metal layer bag
Molybdenum manganese layer, nickel dam and solder layer are included, the molybdenum manganese layer connects the body layer and the nickel dam, and the nickel dam connects the molybdenum manganese
Layer and the solder layer, the nickel dam are combined closely with molybdenum manganese layer, and the nickel dam is combined closely with the solder layer, described
Molybdenum manganese layer separates the body layer and the nickel dam, and the nickel dam separates the molybdenum manganese layer and the solder layer, the solder layer
The solder alloy for soldering by fusing point less than molybdenum manganese layer and the nickel dam is constituted.
In the metallized ceramic structure for soldering of embodiment of the present invention, because metal layer includes solder layer,
So when metallized ceramic structure and kovar alloy carry out soldering, it may be unnecessary to solder is manually placed, so that metal can be realized
Change the automatic assembling of ceramic structure and kovar alloy, so as to reduce the influence of the human factor in assembling process, improve
The stability of welding procedure, so as to reduce failure welding rate.
In some embodiments, the solder layer is evenly dispersed on the surface of the nickel dam.
In some embodiments, the solder alloy includes the copper in yellow gold material, the yellow gold material
The mass percent for accounting for the yellow gold material is 27%~29%.
In some embodiments, the scope of the thickness of the solder layer is in 1um~60um.
The magnetron of embodiment of the present invention includes the metallized ceramic for soldering described in any of the above-described embodiment
Structure.
In the magnetron of embodiment of the present invention, because metal layer includes solder layer, so in metallized ceramic knot
When structure carries out soldering with kovar alloy, it may be unnecessary to manually place solder, so that metallized ceramic structure can be realized and conjunction can be cut down
The automatic assembling of gold, so as to reduce the influence of the human factor in assembling process, improves the stability of welding procedure, from
And reduce failure welding rate.
The additional aspect and advantage of embodiment of the present invention will be set forth in part in the description, partly by from following
Become obvious in description, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become from description of the accompanying drawings below to embodiment is combined
Obtain substantially and be readily appreciated that, wherein：
Fig. 1 is the diagrammatic cross-section of the metallized ceramic structure of embodiment of the present invention.
Fig. 2 is another diagrammatic cross-section of the metallized ceramic structure of embodiment of the present invention.
Main element symbol description：
Metallized ceramic structure 10；
Body layer 11, surface 111, surface 111a, metal layer 12, molybdenum manganese layer 121, nickel dam 122, surface 1221, solder
Layer 123.
Embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element or element with same or like function are represented to same or similar label eventually.Below by ginseng
The embodiment for examining accompanying drawing description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise " are, based on orientation shown in the drawings or position relationship, to be for only for ease of
The description present invention and simplified description, rather than indicate or imply that the device or element of meaning must have specific orientation, Yi Te
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, and it is not intended that indicating or implying relative importance or the implicit quantity for indicating indicated technical characteristic.
Thus, " first " is defined, one or more feature can be expressed or be implicitly included to the feature of " second ".
In description of the invention, " multiple " are meant that two or more, unless otherwise specifically defined.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected.Can
To be mechanical connection or electrical connection.Can be joined directly together, can also be indirectly connected to by intermediary, Ke Yishi
The connection of two element internals or the interaction relationship of two elements.For the ordinary skill in the art, can be with
The concrete meaning of above-mentioned term in the present invention is understood as the case may be.
Also referring to Fig. 1 and Fig. 2, the manufacture method of embodiment of the present invention can be used for metal of the manufacture for soldering
Change ceramic structure 10, manufacture method includes：
Step S12：Body layer 11 is subjected to metalized with the surface 111 in body layer 11 and sequentially forms molybdenum manganese layer
121 and nickel dam 122；
Step S14：The solder alloy for soldering by fusing point less than molybdenum manganese layer 121 and nickel dam 122 is coated in nickel dam 122
Surface on to form pre- solder layer；
Step S16：Pre- solder layer is dried；
Pre- solder layer is sintered to form solder layer 123 by step S18.
It should be noted that in the manufacture method of embodiment of the present invention, " metalized " is referred in body layer
The metal level combined closely with body layer 11, such as molybdenum manganese layer 121 and nickel dam 122 are formed on 11.
The metallized ceramic structure 10 for soldering of embodiment of the present invention can use the manufacture of embodiment of the present invention
Method is manufactured, and including body layer 11 and metal layer 12.Metal layer 12 is covered on the surface of body layer 11.Metal layer
12 combine closely with body layer 11.Metal layer 12 includes molybdenum manganese layer 121, nickel dam 122 and solder layer 123.Molybdenum manganese layer 121 is connected
Body layer 11 and nickel dam 122.The connection molybdenum manganese of nickel dam 122 layer 121 and solder layer 123.Nickel dam 122 is combined closely with molybdenum manganese layer 121.
Nickel dam 122 is combined closely with solder layer 123.Molybdenum manganese layer 121 separates body layer 11 and nickel dam 122.Nickel dam 122 separates molybdenum manganese layer
121 and solder layer 123.Solder alloy for soldering of the solder layer 123 by fusing point less than molybdenum manganese layer 121 and nickel dam 122 is constituted.
The metallized ceramic structure 10 for soldering of embodiment of the present invention can be used for magnetron.In other words, magnetic control
Pipe includes metallized ceramic structure 10.It should be noted that the negative electrode of magnetron can be by metallized ceramic structure with output precision
10 form with kovar alloy soldering, and wherein magnetron can be used in household electrical appliance, and for example in one example, magnetron can be used for
In micro-wave oven.
In the manufacture method manufacture by embodiment of the present invention for the metallized ceramic structure 10 of soldering and including gold
In the magnetron of categoryization ceramic structure 10, due to metal layer 12 include solder layer 123, so metallized ceramic structure 10 with
When kovar alloy carries out soldering, it may be unnecessary to solder is manually placed, so that metallized ceramic structure 10 and kovar alloy can be realized
Automatic assembling, so as to reduce the influence of the human factor in assembling process, improve the stability of welding procedure so that
Reduce failure welding rate.
It should be noted that the structure of metallized ceramic structure 10 is not limited specifically, can be according to practical situations
It is configured.In some instances, metallized ceramic structure 10 is in cylindrical shape or rectangular-shape.Certainly, metallized ceramic knot
The shape of structure 10 is not limited to above-mentioned cited shape.
Meanwhile, body layer 11 is mainly made up of alumina material.It can form steady between body layer 11 and metal layer 12
Fixed chemical bond, such body layer 11 is tightly combined with metal layer 12.It can form steady between nickel dam 122 and molybdenum manganese layer 121
Interaction force between fixed chemical bond, such nickel dam 122 and molybdenum manganese layer 121 is larger, i.e., with reference to closer.Nickel dam 122 with
Stable chemical bond, the interaction force between such nickel dam 122 and solder layer 123 can be formed between solder layer 123 is close
It is larger, i.e., with reference to closer.
Further, metal layer 12 can be completely covered on the surface 111 of body layer 11, the part of body layer 11 can be also covered
Surface 111.For example in the example shown in Fig. 2, metal layer 12 is covered on two opposite surface 111a of body layer 11.
In this way, the surface area that metallized ceramic structure 10 can carry out soldering is larger, the use of metallized ceramic structure 10 is so improved
Rate.
Further, solder layer 123 is made up of the solder alloy for soldering, and wherein the fusing point of solder alloy will be less than molybdenum manganese
The fusing point of layer 121 and nickel dam 122.Because the fusing point of solder alloy is relatively low, the solder layer 123 being so made up of solder alloy is easy to
Soldering is carried out, while when metallized ceramic structure 10 and kovar alloy carry out soldering, ensure that molybdenum manganese layer 121 and nickel dam
122 are not influenced by temperature.
In some instances, solder alloy includes alloy material, wherein the fusing point of alloy material will less than molybdenum manganese layer 121 and
The fusing point of nickel dam 122.Because solder alloy includes alloy material, the fusing point of the solder layer 123 being so made up of solder alloy compared with
It is low, and mobility is preferably, so ensure that device has as formed by metallized ceramic structure 10 and kovar alloy soldering
There is preferable air-tightness, so that the device as formed by metallized ceramic structure 10 with kovar alloy soldering can be higher
Vacuum environment under use.
In addition, the structure of solder layer 123 is not specifically limited, it can be configured as the case may be.It is preferred that solder layer
123 be layer structure.In this way, solder layer 123 is more smooth, so it is beneficial to carry out soldering, while solder layer 123 is with larger
Specific surface area, so improves the utilization rate of solder alloy.
In some embodiments, it is further comprising the steps of before step S12：
Step S11：Body layer 11 is inserted in continuous tunnel furnace and is sintered.The scope for the temperature being sintered in continuous tunnel furnace
At 1500 DEG C~1650 DEG C.
In this way, body layer 11 is sintered under 1500 DEG C~1650 DEG C of temperature conditionss can not only remove body layer 11
On trace impurity (such as a small amount of gas and organic matter in body layer 11), and can be by the sky between the particle in body layer 11
Hole is removed, so as to improve the mechanical strength and anti-wear performance of body layer 11.
In some instances, in step s 11, temperature body layer 11 being sintered in continuous tunnel furnace be 1500 DEG C,
1550 DEG C, 1580 DEG C, 1600 DEG C or 1650 DEG C.It should be noted that the temperature that body layer 11 is sintered in continuous tunnel furnace
It is not limited in value cited in above-mentioned example.Meanwhile, the time that body layer 11 is sintered in continuous tunnel furnace can basis
Concrete condition is configured.
In some embodiments, following sub-step is also included in step s 12：
Step S121：Molybdenum manganese paste is coated on the surface 111 of body layer 11 to be formed by the method for silk-screen printing
Pre- molybdenum manganese layer, then pre- molybdenum manganese stratification is entered be sintered in the stove of reducing atmosphere to form molybdenum manganese layer 121, then in molybdenum manganese
The plating nickel on surface of layer 121 is to form nickel dam 122.
In this way, so that the pre- molybdenum manganese layer formed is more uniform by way of the method for silk-screen printing is coated.Meanwhile,
The mode being sintered in the stove of reducing atmosphere can prevent pre- molybdenum manganese layer oxidation, so as to ensure the molybdenum manganese layer 121 to be formed
Purity.
It should be noted that the reducing atmosphere in " in the stove of reducing atmosphere " can be real by using reductive hydrogen
It is existing, for example in one example, pre- molybdenum manganese stratification can be entered in muffle furnace, then toward through-flow dynamic reductive hydrogen in muffle furnace
To ensure that pre- molybdenum manganese layer is to be sintered under reducing atmosphere.
Meanwhile, it can as the case may be selected in the method for the plating nickel on surface of molybdenum manganese layer 121, for example, can pass through plating
The method of nickel or chemical nickel plating forms nickel dam 122 on the surface of molybdenum manganese layer 121.
In some embodiments, in step S121, pre- molybdenum manganese stratification is entered and is sintered in the stove of reducing atmosphere
Temperature range at 1400 DEG C~1500 DEG C.
In this way, pre- molybdenum manganese layer is sintered under 1400 DEG C~1500 DEG C of temperature conditionss can not only remove pre- molybdenum manganese layer
On trace impurity (such as the organic matter in pre- molybdenum manganese layer), and the cavity between the particle in pre- molybdenum manganese layer can be removed, and
It may be such that and form stable chemical bond between body layer 11 and molybdenum manganese layer 121, so as to improve the knot of the molybdenum manganese layer 121 eventually formed
Structure stability.
In some instances, in step S121, pre- molybdenum manganese stratification is entered to the temperature being sintered in the stove of reducing atmosphere
Spend for 1400 DEG C, 1420 DEG C, 1450 DEG C, 1480 DEG C or 1500 DEG C.It should be noted that pre- molybdenum manganese stratification is entered into reducing atmosphere
Stove in the temperature that is sintered be not limited in value cited in above-mentioned example.Meanwhile, pre- molybdenum manganese stratification is entered into reproducibility
The time being sintered in the stove of atmosphere can be configured as the case may be.
It should be noted that the value that pre- molybdenum manganese stratification enters the temperature being sintered in the stove of reducing atmosphere is less than or
Equal to the value for the temperature being sintered in continuous tunnel furnace to body layer 11.In this way, can avoid due in the stove of reducing atmosphere
Sintering temperature on pre- molybdenum manganese layer is too high and influences the stability of the structure of body layer 11.
In some embodiments, following sub-step is also included in step S14：
Step S141：Multiple body layers 11 are positioned using frock clamp, then will be closed by the method for silk-screen printing
Gold brazing filler metal is coated on nickel dam 122 to form pre- solder layer.
In this way, carrying out positioning to multiple body layers 11 using frock clamp can ensure that the position of multiple body layers 11 is more solid
It is fixed, solder alloy coating is carried out to multiple body layers 11 simultaneously so as to can realize, operating efficiency is so improved.Meanwhile, pass through
The mode that the method for silk-screen printing is coated make it that the pre- solder layer to be formed is more uniform.
It should be noted that the main function of " frock clamp " is that body layer 11 is positioned.In step s 141, may be used
Corresponding frock clamp is selected as the case may be, only need to meet the effect that can be positioned to body layer 11.At this
In invention embodiment, molybdenum manganese layer is sequentially formed body layer 11 is carried out into metalized with the surface 111 in body layer 11
121 and nickel dam 122 after, recycle frock clamp multiple body layers 11 are positioned.
In some instances, the scope of the thickness of pre- solder layer is in 1um~60um.In this way, the thickness of pre- solder layer is moderate,
It can so ensure that there is solder layer 123 sufficient thickness to carry out soldering as formed by being sintered pre- solder layer.
In some embodiments, following sub-step is also included in step s 16：
Step S161：Pre- solder layer is inserted and dried in the Muffle furnace of reducing atmosphere, pre- solder layer is dried
The scope of dry temperature is at 200 DEG C~300 DEG C.
In this way, pre- solder layer is dried under 200 DEG C~300 DEG C of temperature conditionss can not only remove in pre- solder layer
Impurity (such as organic matter), and the structural stability of pre- solder layer can be improved to a certain extent.Meanwhile, reducing atmosphere can
Prevent pre- solder layer from aoxidizing.
It should be noted that the reducing atmosphere in " in the Muffle furnace of reducing atmosphere " can be by using reductive hydrogen
Realize, for example in one example, pre- solder layer can be inserted in muffle furnace, then toward through-flow dynamic reproducibility hydrogen in muffle furnace
Gas is to ensure that pre- solder layer is dried as under reducing atmosphere.
Meanwhile, the time that pre- solder layer is dried in Muffle furnace can be configured as the case may be.For example,
In some examples, in step S161, the scope for the time that pre- solder layer is dried in Muffle furnace is in 6h~9h.When
So, the time pre- solder layer dried in Muffle furnace is not limited to the time range in above-mentioned example.
In some embodiments, following sub-step is also included in step S18：
Step S181：Pre- solder layer is inserted and is sintered in the Muffle furnace protected by reducibility gas, to pre- solder layer
The scope for the temperature being sintered is at 700 DEG C~850 DEG C.
In this way, pre- solder layer is sintered under 700 DEG C~850 DEG C of temperature conditionss not only can further remove pre- pricker
Impurity (such as organic matter) in the bed of material, and the cavity between the particle in pre- solder layer can be removed, and may be such that pre- solder
Stable chemical bond is formed between layer and nickel dam 122, so as to eventually form constitutionally stable solder layer 123.Meanwhile, reproducibility gas
Body protection can prevent pre- solder layer from aoxidizing.
In some embodiments, in step S181, reducibility gas includes hydrogen, and pre- solder layer is sintered
The scope of temperature is at 750 DEG C~800 DEG C.In this way, the reduction effect of reducibility gas is preferable.Meanwhile, 750 DEG C~800 DEG C of burning
Junction temperature moderate range, so can both guarantee to form constitutionally stable solder layer 123, again will not be because of sintering temperature mistake
It is high and influence the performance of solder layer 123, for example cause the solder layer 123 eventually formed to deform.Equally, moderate sintering temperature can
Ensure that the solder layer 123 eventually formed is scattered more uniform.
In some instances, in step S181, the temperature being sintered to pre- solder layer is 750 DEG C, 760 DEG C, 780 DEG C
Or 800 DEG C.It should be noted that the temperature being sintered to pre- solder layer is not limited in value cited in above-mentioned example.
It should be noted that the value for the temperature dried to pre- solder layer is less than the temperature being sintered to pre- solder layer
The value of degree.It can so prevent the temperature dried on pre- solder layer too high and influence the structure of solder layer 123 eventually formed
Stability.Meanwhile, pre- solder layer is inserted what is be sintered in the Muffle furnace protected by reducibility gas in step S161
The value of temperature is less than the value that pre- molybdenum manganese stratification is entered to the temperature being sintered in the stove of reducing atmosphere in step S121.Such as
This, can be avoided because the sintering temperature on pre- solder layer in the Muffle furnace that reducibility gas is protected is too high and influences molybdenum manganese layer
121 or the structural stability of nickel dam 122.
In some embodiments, in step S18, the scope of the time being sintered to pre- solder layer 20min~
30min.In this way, the time being sintered to pre- solder layer is moderate, so can both guarantee to be formed structure it is comparatively dense and
Stable solder layer 123, will not for example cause last because sintering time is long and influences the performance of solder layer 123 again
The solder layer 123 of formation is deformed.
In some instances, the time being sintered to pre- solder layer for 20min, 22min, 25min, 27min or
30min.It should be noted that the time being sintered to pre- solder layer is not limited to value cited in above-mentioned example.
In some embodiments, solder alloy includes yellow gold material.Copper in yellow gold material accounts for silver-bearing copper conjunction
The mass percent of golden material is 27%~29%.In this way, the fusing point of solder alloy is relatively low, and with preferable mobility,
So make it that the wetability and stability of solder layer 123 are preferable, so as to ensure by metallized ceramic structure 10 and conjunction can be cut down
Device formed by golden soldering has preferable air-tightness.Meanwhile, the manufacturing cost of solder layer 123 is relatively low.
In one example, the mass percent that the copper in yellow gold material accounts for yellow gold material is 28%.At certain
In a little embodiments, the scope of the thickness of solder layer 123 is in 1um~60um.In this way, the thickness of solder layer 123 is moderate, so may be used
The validity that soldering is carried out using solder layer 123 is fully ensured that, while the solder alloy that can avoid waste.
In some embodiments, the scope of the thickness of solder layer 123 is in 10um~45um.Solder layer 123 has preferable
Thickness, so ensure that after metallized ceramic structure 10 and kovar alloy soldering that there is preferably performance everywhere.
In some instances, the thickness of solder layer 123 is 10um, 15um, 20um, 25um, 28um, 30um, 35um, 40um
Or 45um.It should be noted that the thickness of solder layer 123 is not limited to above-mentioned cited value.
In some embodiments, in metallized ceramic structure 10, solder layer 123 is evenly dispersed in nickel dam 122
On surface 1221.
In this way, solder layer 123 is scattered more uniform, so it is beneficial to carry out soldering, and ensure that metallized ceramic structure
10 with kovar alloy soldering after performance everywhere uniformity, while solder layer 123 have larger specific surface area, so raising
The utilization rate of solder alloy.
In embodiments of the present invention, the metallization for soldering is manufactured in the manufacture method using embodiment of the present invention
During ceramic structure 10, the uniform pre- solder layer of a layer thickness can be first formed on the surface 1221 of nickel dam 122, then again by pre- pricker
The bed of material is sintered to form the solder layer 123 on the surface 1221 for being evenly dispersed in nickel dam 122 under moderate sintering temperature.
Wherein, to the moderate sintering temperature that pre- solder layer is sintered it is the necessary condition to form uniform solder layer 123, it can join
Examine the value of the temperature being sintered to pre- solder layer in other embodiment, the sintering temperature being for example sintered to pre- solder layer
Degree can be 750 DEG C.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or it " under "
Can directly it be contacted including the first and second features, it is not direct contact but by it that can also include the first and second features
Between other characterisation contact.Moreover, fisrt feature second feature " on ", " top " and " above " to include first special
Levy directly over second feature and oblique upper, or be merely representative of fisrt feature level height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " fisrt feature that includes are immediately below second feature and obliquely downward, or be merely representative of
Fisrt feature level height is less than second feature.
Following disclosure provides many different embodiments or example is used for realizing the different structure of the present invention.In order to
Simplify disclosure of the invention, hereinafter the part and setting of specific examples are described.Certainly, they are only merely illustrative, and
And purpose does not lie in the limitation present invention.In addition, the present invention can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, between discussed various embodiments itself are not indicated and/or are set
Relation.In addition, the invention provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
In the description of this specification, reference term " embodiment ", " some embodiments ", " schematically implementation
It is specific that the description of mode ", " example ", " specific example " or " some examples " etc. means to combine embodiment or example is described
Feature, structure, material or feature are contained at least one embodiment of the present invention or example.In this manual, it is right
The schematic representation of above-mentioned term is not necessarily referring to identical embodiment or example.Moreover, the specific features of description, knot
Structure, material or feature can in an appropriate manner be combined in any one or more embodiments or example.
While embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that：
These embodiments can be carried out with a variety of changes, modification in the case of not departing from the principle and objective of the present invention, replace and become
Type, the scope of the present invention is limited by claim and its equivalent.
Claims (14)
1. a kind of manufacture method of metallized ceramic structure for soldering, it is characterised in that including：
Body layer progress metalized is sequentially formed into molybdenum manganese layer and nickel dam with the surface in the body layer；
Fusing point is coated in the surface of the nickel dam less than the solder alloy for soldering of molybdenum manganese layer and the nickel dam
To form pre- solder layer；
The pre- solder layer is dried；
The pre- solder layer is sintered to form solder layer.
2. it is used for the manufacture method of the metallized ceramic structure of soldering as claimed in claim 1, it is characterised in that the manufacture
Method is the step of body layer progress metalized is sequentially formed into molybdenum manganese layer and nickel dam with the surface in the body layer before
It is further comprising the steps of：
The body layer is inserted in continuous tunnel furnace and is sintered, the temperature being sintered in the continuous tunnel furnace to the body layer
Scope at 1500 DEG C~1650 DEG C.
3. it is used for the manufacture method of the metallized ceramic structure of soldering as claimed in claim 1, it is characterised in that the manufacture
Method is in the step of body layer progress metalized is sequentially formed into molybdenum manganese layer and nickel dam with the surface in the body layer
It is further comprising the steps of：
Molybdenum manganese paste is coated on the surface of the body layer by the method for silk-screen printing to form pre- molybdenum manganese layer, then will
The pre- molybdenum manganese stratification, which enters, to be sintered in the stove of reducing atmosphere to form the molybdenum manganese layer, then in the table of molybdenum manganese layer
Face nickel plating is to form the nickel dam.
4. it is used for the manufacture method of the metallized ceramic structure of soldering as claimed in claim 1, it is characterised in that the manufacture
Fusing point is being coated in the surface of the nickel dam by method less than the solder alloy for soldering of molybdenum manganese layer and the nickel dam
On to form pre- solder layer the step of in it is further comprising the steps of：
Multiple body layers are positioned using frock clamp, then applied the solder alloy by the method for silk-screen printing
Overlay on the nickel dam to form the pre- solder layer.
5. it is used for the manufacture method of the metallized ceramic structure of soldering as claimed in claim 1, it is characterised in that the manufacture
Method is further comprising the steps of in the step of being dried the pre- solder layer：
The pre- solder layer is inserted and dried in the Muffle furnace of reducing atmosphere, the temperature dried to the pre- solder layer
The scope of degree is at 200 DEG C~300 DEG C.
6. it is used for the manufacture method of the metallized ceramic structure of soldering as claimed in claim 1, it is characterised in that the manufacture
Method is further comprising the steps of in the step of pre- solder layer is sintered to form solder layer：
The pre- solder layer is inserted and is sintered in the Muffle furnace protected by reducibility gas, the pre- solder layer is burnt
The scope of the temperature of knot is at 700 DEG C~850 DEG C.
7. it is used for the manufacture method of the metallized ceramic structure of soldering as claimed in claim 6, it is characterised in that the reduction
Property gas include hydrogen, the scope for the temperature being sintered to the pre- solder layer is at 750 DEG C~800 DEG C, to the pre- solder
The scope for the time that layer is sintered is in 20min~30min.
8. it is used for the manufacture method of the metallized ceramic structure of soldering as claimed in claim 1, it is characterised in that the alloy
Solder includes yellow gold material, and the mass percent that the copper in the yellow gold material accounts for the yellow gold material is
27%~29%.
9. it is used for the manufacture method of the metallized ceramic structure of soldering as claimed in claim 1, it is characterised in that the solder
The scope of the thickness of layer is in 1um~60um.
10. a kind of metallized ceramic structure for soldering, it is characterised in that including body layer and metal layer, the metal
Change layer to be covered on the surface of the body layer, the metal layer is combined closely with the body layer, the metal layer bag
Molybdenum manganese layer, nickel dam and solder layer are included, the molybdenum manganese layer connects the body layer and the nickel dam, and the nickel dam connects the molybdenum manganese
Layer and the solder layer, the nickel dam are combined closely with molybdenum manganese layer, and the nickel dam is combined closely with the solder layer, described
Molybdenum manganese layer separates the body layer and the nickel dam, and the nickel dam separates the molybdenum manganese layer and the solder layer, the solder layer
The solder alloy for soldering by fusing point less than molybdenum manganese layer and the nickel dam is constituted.
11. it is used for the metallized ceramic structure of soldering as claimed in claim 10, it is characterised in that the solder layer is equably
On the surface for being dispersed in the nickel dam.
12. it is used for the metallized ceramic structure of soldering as claimed in claim 10, it is characterised in that the solder alloy includes
Copper in yellow gold material, the yellow gold material account for the mass percent of the yellow gold material for 27%~
29%.
13. it is used for the metallized ceramic structure of soldering as claimed in claim 10, it is characterised in that the thickness of the solder layer
Scope in 1um~60um.
14. a kind of magnetron, it is characterised in that including the metallization for soldering as described in claim any one of 10-13
Ceramic structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710271292.6A CN107234309B (en) | 2017-04-24 | 2017-04-24 | Metallized ceramic structure for brazing, manufacturing method thereof and magnetron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710271292.6A CN107234309B (en) | 2017-04-24 | 2017-04-24 | Metallized ceramic structure for brazing, manufacturing method thereof and magnetron |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107234309A true CN107234309A (en) | 2017-10-10 |
| CN107234309B CN107234309B (en) | 2021-01-26 |
Family
ID=59984197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710271292.6A Active CN107234309B (en) | 2017-04-24 | 2017-04-24 | Metallized ceramic structure for brazing, manufacturing method thereof and magnetron |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107234309B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113909665A (en) * | 2021-10-22 | 2022-01-11 | 哈尔滨工业大学 | Method for diffusion welding of Kovar alloy with molybdenum-rhenium alloy and intermediate layer |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1225049A (en) * | 1996-07-24 | 1999-08-04 | 欧文斯科尔宁格公司 | Vacuum insulation vessels and methods of making same |
| CN1422721A (en) * | 1997-03-12 | 2003-06-11 | 同和矿业株式会社 | Method for producing metal-ceramic composite lining and solder material used for same |
| EP1333953A1 (en) * | 2000-10-24 | 2003-08-13 | Nanogate Technologies GmbH | Soldering method for producing a ceramic-metal joint |
| JP2004142971A (en) * | 2002-10-22 | 2004-05-20 | Tokyo Gas Co Ltd | Process for joining ceramic material to stainless steel |
| CN102009240A (en) * | 2010-10-20 | 2011-04-13 | 北京科技大学 | Method for connecting AlN (aluminum nitride) ceramics and SiC/Al composite material respectively plated with thin-film metal layer on surface |
| CN102476955A (en) * | 2010-11-30 | 2012-05-30 | 鸿富锦精密工业（深圳）有限公司 | Method for connecting stainless steel with silicon nitride ceramics as well as connection piece manufactured by using method |
| CN104741808A (en) * | 2013-12-25 | 2015-07-01 | 北京有色金属研究总院 | Welding method of WP/Al composite material and Al2O3 ceramic |
| CN105081622A (en) * | 2015-09-14 | 2015-11-25 | 沈阳飞机工业（集团）有限公司 | Method for manufacturing and pre-installing brazing filler material ring |
| CN105130486A (en) * | 2014-05-23 | 2015-12-09 | 通用电气公司 | Method for joining ceramic to metal and sealing structure thereof |
| CN105171172A (en) * | 2015-09-14 | 2015-12-23 | 沈阳飞机工业（集团）有限公司 | Brazing filler metal presetting method for guide pipe brazing connection piece |
-
2017
- 2017-04-24 CN CN201710271292.6A patent/CN107234309B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1225049A (en) * | 1996-07-24 | 1999-08-04 | 欧文斯科尔宁格公司 | Vacuum insulation vessels and methods of making same |
| CN1422721A (en) * | 1997-03-12 | 2003-06-11 | 同和矿业株式会社 | Method for producing metal-ceramic composite lining and solder material used for same |
| EP1333953A1 (en) * | 2000-10-24 | 2003-08-13 | Nanogate Technologies GmbH | Soldering method for producing a ceramic-metal joint |
| JP2004142971A (en) * | 2002-10-22 | 2004-05-20 | Tokyo Gas Co Ltd | Process for joining ceramic material to stainless steel |
| CN102009240A (en) * | 2010-10-20 | 2011-04-13 | 北京科技大学 | Method for connecting AlN (aluminum nitride) ceramics and SiC/Al composite material respectively plated with thin-film metal layer on surface |
| CN102476955A (en) * | 2010-11-30 | 2012-05-30 | 鸿富锦精密工业（深圳）有限公司 | Method for connecting stainless steel with silicon nitride ceramics as well as connection piece manufactured by using method |
| CN104741808A (en) * | 2013-12-25 | 2015-07-01 | 北京有色金属研究总院 | Welding method of WP/Al composite material and Al2O3 ceramic |
| CN105130486A (en) * | 2014-05-23 | 2015-12-09 | 通用电气公司 | Method for joining ceramic to metal and sealing structure thereof |
| CN105081622A (en) * | 2015-09-14 | 2015-11-25 | 沈阳飞机工业（集团）有限公司 | Method for manufacturing and pre-installing brazing filler material ring |
| CN105171172A (en) * | 2015-09-14 | 2015-12-23 | 沈阳飞机工业（集团）有限公司 | Brazing filler metal presetting method for guide pipe brazing connection piece |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113909665A (en) * | 2021-10-22 | 2022-01-11 | 哈尔滨工业大学 | Method for diffusion welding of Kovar alloy with molybdenum-rhenium alloy and intermediate layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107234309B (en) | 2021-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3104400B1 (en) | Manufacturing method of electronic component module | |
| WO2021007949A1 (en) | Process method for improving welding strength of igbt module terminals | |
| CN105541367B (en) | A kind of ceramic discharge tube low temperature nickel metallization method for sealing | |
| CN107845617B (en) | Chip sintered product, subunit, IGBT packaging module and preparation method | |
| CN108376669A (en) | Eutectic weld assembly and eutectic welding method | |
| CN111092049B (en) | Copper-clad and high-power electronic chip all-copper interconnection packaging scheme for ceramic substrate | |
| CN106986650A (en) | A kind of microwave of aluminium silicon carbide material and the preparation method of hybrid circuit shell | |
| CN109384474A (en) | Ceramic low-temp active metallization lotion, ceramic metallization method and the vacuum electron device according to this method preparation | |
| CN107234309A (en) | Metallized ceramic structure and its manufacture method and magnetron for soldering | |
| CN108289390A (en) | Solve support plate design, packaging method and support plate that small-sized Resistor-Capacitor Unit is set up a monument | |
| WO2001017045A3 (en) | Layer between a cathode and an interconnector of a fuel cell and method for producing a layer of this type | |
| CN106552990B (en) | A kind of inside micro-bonding method of patch potentiometer | |
| CN114043122B (en) | High-temperature brazing filler metal containing Cu @ Sn core-shell bimetallic powder and preparation method and application thereof | |
| CN109712895A (en) | A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring | |
| CN214957808U (en) | Gas discharge tube with integrated electrode | |
| CN100492747C (en) | Electrochemical battery | |
| CN103050205A (en) | Manufacturing method for radio frequency power resistor | |
| CN106001893A (en) | Tuning assembly, manufacturing method thereof and high-frequency assembly | |
| JP6709677B2 (en) | Method for preparing high-conductivity thick-film aluminum paste | |
| CN110035629A (en) | The method that air sealing cover is carried out to microwave module using nanometer silver paste | |
| JP2020040074A (en) | Bonding powder and bonding paste, and method for bonding member to be bonded by using the paste | |
| JPH0246603A (en) | Conductive paste | |
| CN111273750A (en) | Capillary structure element | |
| JP2020040075A (en) | Bonding powder and bonding paste, and method for bonding member to be bonded by using the paste | |
| CN109192672A (en) | A kind of sintering method of silicon chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |