CN107228710B - A kind of quantum efficiency of LED measuring device and its measurement method - Google Patents

A kind of quantum efficiency of LED measuring device and its measurement method Download PDF

Info

Publication number
CN107228710B
CN107228710B CN201710383842.3A CN201710383842A CN107228710B CN 107228710 B CN107228710 B CN 107228710B CN 201710383842 A CN201710383842 A CN 201710383842A CN 107228710 B CN107228710 B CN 107228710B
Authority
CN
China
Prior art keywords
temperature
quantum efficiency
light emitting
emitting diode
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201710383842.3A
Other languages
Chinese (zh)
Other versions
CN107228710A (en
Inventor
陈忠
张汝京
林思棋
施天谟
吕毅军
林岳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINERAYTEK OPTOELECTRONICS CO Ltd
Xiamen University
Original Assignee
SHINERAYTEK OPTOELECTRONICS CO Ltd
Xiamen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINERAYTEK OPTOELECTRONICS CO Ltd, Xiamen University filed Critical SHINERAYTEK OPTOELECTRONICS CO Ltd
Priority to CN201710383842.3A priority Critical patent/CN107228710B/en
Publication of CN107228710A publication Critical patent/CN107228710A/en
Application granted granted Critical
Publication of CN107228710B publication Critical patent/CN107228710B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • G01J3/2803Investigating the spectrum using photoelectric array detector
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22Electrical features thereof

Abstract

A kind of quantum efficiency of LED measuring device and its measurement method, are related to light emitting diode.Device is equipped with computer, digital power table, temperature voltage input table, temperature control fixture, spectrometer and thermal infrared imager.Measurement method:Using quantum efficiency of LED measuring device;One group of temperature value T is set by temperature voltage input table, one group of temperature value of setting includes at least 5 different temperature value T;Different temperature control fixture temperature value T are obtained by temperature value and current value measurementSUnder light emitting diode one group of quantum efficiency η;By one group of measured quantum efficiency η, the relational graph of quantum efficiency η and temperature T under the conditions of different current value I are first drawn;The quantum efficiency (η ') in the case of eliminating heat affecting is obtained by formula.

Description

A kind of quantum efficiency of LED measuring device and its measurement method
Technical field
The present invention relates to light emitting diodes, more particularly, to a kind of quantum efficiency of LED measuring device and its measurement Method.
Background technology
In the past few years, light emitting diode (LED) technology is developed rapidly, and is widely used in backlight, is handed over The fields such as ventilating signal lamp and general illumination ([1] Z.Q.Liu, T.B.Wei, E.Q.Guo, X.Y.Yi, L.C.Wang, J.X.Wang, G.H.Wang,Y.Shi,I.Ferguson and J.M.Li,Appl.Phys.Lett.99,091104(2011);[2] M.E.Raypah,B.K.Sodipo,M.Devarajan,and F.Sulaiman,IEEE Trans.Electron Devices, 63,2790-2795,(2016)).When being worked due to semiconductor devices, especially power semiconductor, it will produce a large amount of Heat causes the temperature at LED P N knots to increase, and PN junction temperature rise can cause light-emitting diode luminous efficiency to decline.It is accurate The quantum efficiency when work of LED device constant temperature is really measured, it on the one hand can be with the quality of materials and device of analysis device Internal structure, on the other hand be also practical application design in an important parameter.Constant temperature lower semiconductor quantum is measured at present The method of efficiency mainly uses impulse method.The square-wave pulse that the method must use pulsewidth short, but still cannot prevent to shine completely Temperature rise when diode operation, and due to the use of the pulse power, what light emitting diode was sent out is passage of scintillation light, and passage of scintillation light is adopted It is big to collect difficulty.
Invention content
The purpose of the present invention is to provide that can eliminate, light emitting diode fuel factor influences, measuring device is simple and convenient to operate A kind of quantum efficiency of LED measuring device and its measurement method.
The quantum efficiency of LED measuring device is equipped with computer, digital power table, temperature voltage input table, temperature control Fixture, spectrometer and thermal infrared imager;Light emitting diode to be measured, the connection of digital power apparent source the two poles of the earth is clamped in the temperature control fixture Light emitting diode to be measured, digital power table are electrically connected with mechatronics, computer is calculated with temperature voltage input table, temperature voltage input The mating temperature sensor of table and heating plate are mounted on temperature control fixture, spectrometer and calculating mechatronics, infrared thermal imagery Instrument and calculating mechatronics.
The quantum efficiency of LED measurement method includes the following steps:
1) quantum efficiency of LED measuring device is used;
2) one group of temperature value T is set by temperature voltage input table, one group of temperature value of setting includes at least 5 different temperature Value T, the temperature value are less than the invalid temperature of light emitting diode to be measured, while by digital power table setting electric current value I, the electricity Flow valuve I is less than the failure electric current of light emitting diode to be measured;
3) one group of set temperature value and set current value are pressed, measures obtain different temperature control fixture temperature values respectively TSUnder light emitting diode one group of quantum efficiency η;
4) by one group of quantum efficiency η measured by step 3), first draw under the conditions of different current value I quantum efficiency η with Then the relational graph of temperature T carries out fitting a straight line by following formula (1):
η=λ1(I)-λ2(I)*T (1)
Obtain one group of λ corresponding with current value I1(I) and λ2(I) coefficient;
5) control temperature control fixture is temperature-resistant, and the output current of digital power table is made to start from scratch gradual increase, infrared Thermal imaging system measures and records the temperature T (I) of light emitting diode, and the electric current of measurement is no more than the failure electric current of light emitting diode, then It is fitted by following formula (2):
T (I)=A+B*I (2)
6) the temperature-resistant of temperature control fixture is kept, so that the output current of digital power table is started from scratch gradual increase, spectrum Instrument measures and records the quantum efficiency η of light emitting diode being influenced by heat, and the electric current of measurement is no more than the failure of light emitting diode Electric current;
7) quantum efficiency (η ') in the case of eliminating heat affecting is obtained by formula (3):
η '=η+B* ∫ λ2(I)dI. (3)。
Compared with the prior art, beneficial effects of the present invention are as follows:
Computer changes luminous two by the output signal for the commanded temperatures voltage input table prearranged by temperature control fixture The junction temperature of pole pipe;Computer controls digital power table and applies electric current to light emitting diode;Thermal infrared imager and spectrometer test knot Fruit feeds back to computer and preserves so as to post-processing.By indirect method, can measure light emitting diode eliminate heat affecting it Quantum efficiency afterwards, included fuel factor influences when avoiding LED test under pulse current working condition;Luminous two There are good linear relationships between the quantum efficiency and junction temperature of pole pipe.
Description of the drawings
Fig. 1 is the quantum efficiency of LED measuring device built of the embodiment of the present invention and uses schematic diagram.
Fig. 2 is that quantum efficiency of LED of the embodiment of the present invention measures quantum efficiency and temperature change relational graph.In Fig. 2 In exposition electric current as a result, abscissa be kelvin degree, ordinate is quantum efficiency.
Fig. 3 is the temperature-current graph of relation of light emitting diode of the embodiment of the present invention.In figure 3, temperature control fixture temperature Value is arranged in 300K;Abscissa is electric current, and ordinate is kelvin degree.
Fig. 4 is the quantum efficiency and current relationship curve that light emitting diode of the embodiment of the present invention is influenced by heat at room temperature, With the quantum efficiency and current relationship curve of removal heat affecting.In Fig. 4, abscissa is electric current, and ordinate is quantum efficiency.
Specific implementation mode
The invention will be further described with reference to the accompanying drawings and examples.
Measurement method described in the present embodiment, includes the following steps:
1) quantum efficiency measuring device is built
As shown in Figure 1, quantum efficiency measuring device is equipped with computer 1, digital power table 2, temperature voltage input table 3, temperature control Fixture 4, spectrometer 6 and thermal infrared imager 7;
Light emitting diode 5 to be measured is clamped in temperature control fixture 4, and light emitting diode 5, number are surveyed in the reception of 2 two poles of digital power table Word power meter 2 is electrically connected with computer 1, and computer 1 is electrically connected with temperature voltage input table 3, the mating temperature of temperature voltage input table 3 Degree sensor 31 and heating plate 32 be mounted on temperature control fixture 4, spectrometer 6 is electrically connected with computer 1, thermal infrared imager 7 and Computer 1 is electrically connected;
2) one group of temperature value T is set by temperature voltage input table 3, one group of temperature value 300K, 305K of setting, 310K, 315K, 320K, 325K and 330K, these temperature values are less than the invalid temperature of light emitting diode 5 to be measured, while being set by digital power table 2 Current value 1mA is measured and is obtained one group of corresponding quantum efficiency value of the light emitting diode under different temperatures value;
3) by one group of quantum efficiency value measured by step 2), the relational graph of quantum efficiency and temperature is first drawn, then Fitting a straight line is carried out by following formula (1):
η=λ1(I)-λ2(I)*T (1)
Obtain one group of λ corresponding with current value (I)1(I) and λ2(I) coefficient;
4) gradually increase current value, repeat step 2) with 3), obtain the quantum corresponding to different temperatures value under different electric currents Efficiency value and a series of λs corresponding with current value (I)1(I) and λ2(I) coefficient, as shown in Figure 2;
5) control temperature control fixture 4 is temperature-resistant, so that the output current of digital power table 2 is started from scratch and gradually increases to 300mA, thermal infrared imager 7 measure and record the temperature T (I) of light emitting diode 5, as shown in Figure 3.The electric current of measurement is no more than hair The failure electric current of optical diode 5, then be fitted by following formula (2):
T (I)=A+B*I (2)
Obtain A, B coefficient value.
6) the temperature-resistant of temperature control fixture 4 is kept, so that the output current of digital power table 2 is started from scratch gradual increase, light Spectrometer 6 measures and records the quantum efficiency η of light emitting diode 5 being influenced by heat, and the electric current of measurement is no more than light emitting diode 5 Fail electric current.
7) quantum efficiency (η ') in the case of eliminating heat affecting can be obtained by formula (3):
η '=η+B* ∫ λ2(I)dI. (3)。
Fig. 4 is the quantum efficiency and current relationship curve that light emitting diode was influenced by heat and excluded heat affecting.It can be seen by Fig. 4 Go out, by light emitting diode heat affecting, quantum efficiency is relatively low.Quantum efficiency can increase after eliminating heat affecting.
Measurement method described in the present embodiment can eliminate the influence of light emitting diode fuel factor, obtain light emitting diode without thermal effect The quantum efficiency answered.

Claims (1)

1. quantum efficiency of LED measurement method, it is characterised in that include the following steps:
1) quantum efficiency of LED measuring device is used, the quantum efficiency of LED measuring device, which is equipped with, to be calculated Machine, digital power table, temperature voltage input table, temperature control fixture, spectrometer and thermal infrared imager;Hair to be measured is clamped in the temperature control fixture Optical diode, digital power apparent source the two poles of the earth connect light emitting diode to be measured, digital power table and calculating mechatronics, computer It is electrically connected with temperature voltage input table, the mating temperature sensor of temperature voltage input table and heating plate are mounted on temperature control fixture On, spectrometer and calculating mechatronics, thermal infrared imager and calculating mechatronics;
2) one group of temperature value T being set by temperature voltage input table, one group of temperature value of setting includes at least 5 different temperature value T, The temperature value is less than the invalid temperature of light emitting diode to be measured, while by digital power table setting electric current value I, the current value I is less than the failure electric current of light emitting diode to be measured;
3) one group of set temperature value and set current value are pressed, measures obtain different temperature control fixture temperature value T respectivelySUnder Light emitting diode one group of quantum efficiency η;
4) by one group of quantum efficiency η measured by step 3), quantum efficiency η and temperature T under the conditions of different current value I is first drawn Relational graph, then pass through following formula (1) carry out fitting a straight line:
η=λ1(I)-λ2(I)*T (1)
Obtain one group of λ corresponding with current value I1(I) and λ2(I) coefficient;
5) control temperature control fixture is temperature-resistant, so that the output current of digital power table is started from scratch gradual increase, infrared thermal imagery Instrument measures and records the temperature T (I) of light emitting diode, and the electric current of measurement is no more than the failure electric current of light emitting diode, then passes through Following formula (2) are fitted:
T (I)=A+B*I (2)
6) the temperature-resistant of temperature control fixture is kept, the output current of digital power table is made to start from scratch gradual increase, spectrometer is surveyed The quantum efficiency η of light emitting diode being influenced by heat is measured and records, the electric current of measurement is no more than the failure electric current of light emitting diode;
7) quantum efficiency (η ') in the case of eliminating heat affecting is obtained by formula (3):
η '=η+B* ∫ λ2(I)dI. (3)。
CN201710383842.3A 2017-05-26 2017-05-26 A kind of quantum efficiency of LED measuring device and its measurement method Expired - Fee Related CN107228710B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710383842.3A CN107228710B (en) 2017-05-26 2017-05-26 A kind of quantum efficiency of LED measuring device and its measurement method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710383842.3A CN107228710B (en) 2017-05-26 2017-05-26 A kind of quantum efficiency of LED measuring device and its measurement method

Publications (2)

Publication Number Publication Date
CN107228710A CN107228710A (en) 2017-10-03
CN107228710B true CN107228710B (en) 2018-08-07

Family

ID=59934248

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710383842.3A Expired - Fee Related CN107228710B (en) 2017-05-26 2017-05-26 A kind of quantum efficiency of LED measuring device and its measurement method

Country Status (1)

Country Link
CN (1) CN107228710B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108535878B (en) * 2018-04-17 2020-06-19 图灵人工智能研究院(南京)有限公司 Method for stabilizing quantum light source and stabilized quantum light source

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003214945A (en) * 2002-01-24 2003-07-30 National Institute Of Advanced Industrial & Technology Method and device for measuring external quantum efficiency for luminescent element
JP3773499B2 (en) * 2003-04-08 2006-05-10 住友重機械アドバンストマシナリー株式会社 Method and apparatus for measuring external quantum efficiency of light emitting device
CN102175428A (en) * 2011-01-10 2011-09-07 杭州远方光电信息股份有限公司 Device and method for measuring internal quantum efficiency of light emitting diode (LED)
CN202008518U (en) * 2010-12-27 2011-10-12 同方光电科技有限公司 Measuring device for LED (light-emitting diode) derating curve
CN102252829A (en) * 2011-04-25 2011-11-23 北京大学 Method for measuring internal quantum efficiency and light extraction efficiency of LED
CN103528802A (en) * 2013-10-31 2014-01-22 中国科学院半导体研究所 Method for measuring internal quantum efficiency of nitride LED through electroluminescent spectrum
CN103645033A (en) * 2013-11-27 2014-03-19 中国科学院半导体研究所 Method for measuring LED internal quantum efficiency
CN103808497A (en) * 2014-03-05 2014-05-21 中国科学院半导体研究所 Method for measuring quantum efficiency in LED
KR101675576B1 (en) * 2014-09-23 2016-11-14 주식회사 맥사이언스 Method and Apparatus for Measuring Quantum Efficiency and Conversion Efficiency of Sollar Cell with Single Lightsource

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103234656B (en) * 2013-05-17 2014-11-12 厦门大学 Measuring method for junction temperature of LED (light emitting diode)

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003214945A (en) * 2002-01-24 2003-07-30 National Institute Of Advanced Industrial & Technology Method and device for measuring external quantum efficiency for luminescent element
JP3773499B2 (en) * 2003-04-08 2006-05-10 住友重機械アドバンストマシナリー株式会社 Method and apparatus for measuring external quantum efficiency of light emitting device
CN202008518U (en) * 2010-12-27 2011-10-12 同方光电科技有限公司 Measuring device for LED (light-emitting diode) derating curve
CN102175428A (en) * 2011-01-10 2011-09-07 杭州远方光电信息股份有限公司 Device and method for measuring internal quantum efficiency of light emitting diode (LED)
CN102252829A (en) * 2011-04-25 2011-11-23 北京大学 Method for measuring internal quantum efficiency and light extraction efficiency of LED
CN103528802A (en) * 2013-10-31 2014-01-22 中国科学院半导体研究所 Method for measuring internal quantum efficiency of nitride LED through electroluminescent spectrum
CN103645033A (en) * 2013-11-27 2014-03-19 中国科学院半导体研究所 Method for measuring LED internal quantum efficiency
CN103808497A (en) * 2014-03-05 2014-05-21 中国科学院半导体研究所 Method for measuring quantum efficiency in LED
KR101675576B1 (en) * 2014-09-23 2016-11-14 주식회사 맥사이언스 Method and Apparatus for Measuring Quantum Efficiency and Conversion Efficiency of Sollar Cell with Single Lightsource

Also Published As

Publication number Publication date
CN107228710A (en) 2017-10-03

Similar Documents

Publication Publication Date Title
CN103234656B (en) Measuring method for junction temperature of LED (light emitting diode)
CN100374872C (en) Semiconductor PN node diode device temperature rise measuring method and apparatus
CN103364032B (en) Light emitting semiconductor device or the online multifunctional test system of module and method
CN103217229B (en) A kind of junction temperature measurement method of light emitting diode and application
CN101266280A (en) High power light-emitting diode heat resistance and junction temperature test system
CN105357804B (en) A kind of formation light LED light source life-cycle brightness precisely controlling system and its control method
CN103411702A (en) Device for non-contact measurement of junction temperature of white LED by use of peak wavelength displacement method
CN102252829B (en) Method for measuring internal quantum efficiency and light extraction efficiency of LED
CN103926517B (en) The test device and method of power type LED thermal resistance
CN103267588A (en) Junction temperature testing device and junction temperature testing method based on temperature variation of LED (light-emitting diode) relative spectrum
CN104019908A (en) LED junction temperature or average LED array junction temperature measuring method
CN102565654A (en) Measurement system and measuring method for derating curve of LED (light-emitting diode)
CN104020405A (en) Pulse type power mode LED voltage-current-junction temperature characteristic testing device
CN103592590B (en) The test macro that a kind of LED component photoelectric heat is integrated and method
CN103175624A (en) Non-contact LED junction temperature measurement method and device
CN104748885A (en) Method for measuring LED (Light Emitting Diode) junction temperature based on I-V feature curve
CN106323496A (en) Novel LED junction temperature measuring method
CN107228710B (en) A kind of quantum efficiency of LED measuring device and its measurement method
CN106199371A (en) Alternating-current pulse is utilized to measure the resistance of AC LED heat and the method and device of junction temperature
CN203225042U (en) A LED characteristic testing apparatus used in teaching application of photoelectric specialty in colleges
CN100460864C (en) Method for testing junction temp. of semiconductor LED with gallium nitride base
CN103336024B (en) The thermoelectricity capability test system of thermoelectric material
CN203376143U (en) LED lamp temperature characteristic detection device
CN103605085A (en) LED thermal characteristic test method based on structure function
CN2901333Y (en) Temperature rise and heat resistance detector of semiconductor PN junction diode device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180807

Termination date: 20190526