CN2901333Y - Temperature rise and heat resistance detector of semiconductor PN junction diode device - Google Patents
Temperature rise and heat resistance detector of semiconductor PN junction diode device Download PDFInfo
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- CN2901333Y CN2901333Y CN 200520128067 CN200520128067U CN2901333Y CN 2901333 Y CN2901333 Y CN 2901333Y CN 200520128067 CN200520128067 CN 200520128067 CN 200520128067 U CN200520128067 U CN 200520128067U CN 2901333 Y CN2901333 Y CN 2901333Y
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- 230000005540 biological transmission Effects 0.000 claims description 6
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Abstract
The utility model belongs to semi-conductor components testing field. The present temperature rise and heat resistance measuring has complex operation, long period and some causing damage. The arrangement: a component under test (401) is put on a constant temperature platform (403), a computer (100) is connected with a pick device (205) through an interface (200), the pick device (205) is divided into three lines, the first line is connected with the component under test (401) through a three-way switch (303), the second line is connected with a sampling resistance (501), the three-way switch (303) and a testing current source (201), one end of which is connected with the interface (200), the other end of which is connected with a current switch (301), the third line is connected with a sampling resistance (502), the three-way switch (303) and an operating current source (202), one end of which is connected with the interface (200), the other end of which is connected with the current switch (301), two inputs of the current switch (301) are connected with the testing current source (201), output is connected with a reference loading (402) and the component under test (401), control end is connected with a sequence generator (203), one end of the pick device (205) is connected with interface (200), the other end is connected with a speedy cut-off amplifier (302) which is connected to the component under test (401). The utility model is non-destructive and capable of transient heating response curve to distinct resistance composition of the component under test.
Description
Technical field:
This technology belongs in the microelectric technique, the semiconductor devices field of measuring technique.This utility model is mainly used in the measurement of the work temperature rise of semiconductor PN device (semiconductor luminotron, semiconductor laser and other semiconductor diode device).
Background technology:
When semiconductor devices, particularly power semiconductor device are worked, can produce a large amount of heat, cause the temperature at semiconductor PN place to raise.This will speed up the mis-behave of semiconductor devices.Shorten and the degradation of device as mission life.The heat of generation was relevant when the factor that influences the semiconductor devices temperature rise work with device on the one hand; For also relevant with its luminescence efficiency based on the PN junction luminescent device.It is certain to apply electric power, and luminescence efficiency is big more, and the power that is used to produce heat is just few more; Another factor then with the distance of heat radiation from PN junction to surrounding environment in, each link material heat dissipation characteristics is relevant.Be generally chip, scolder, the heat sink and encapsulation shell of semiconductor material.The temperature rise that accurately measures semiconductor devices when work PN junction place on the one hand can analysis device quality of materials and package thermal characteristic, also be the important parameter that must understand in the practical application design on the other hand.
The method of measuring semiconductor PN device temperature rise and thermal resistance at present mainly contains the thermal infrared imager method, by the Temperature Distribution on surface, measures the temperature rise and the thermal resistance of semiconductor devices.For luminescent device, can utilize emission wavelength with variation of temperature, measure its inner temperature rise.But these measuring technique complicated operations, measuring period is long, and the device that has also need be opened the device pipe and emit, and brings certain destructiveness.
The utility model content:
Main inventive point of the present utility model is: utilize the fast-pulse technology, utility model the method and apparatus of a kind of non-destroyed measurement semiconductor PN diode transient state and steady operation temperature rise and thermal resistance, after particularly can measuring the semiconductor PN device and adding power, PN junction place temperature uphill process in time, promptly transient state adds thermal response curve.The main thermal resistance that can tell device by this curve constitutes.
The temperature rise of a kind of semiconductor PN node diode device that the utility model provides and thermal resistance measurement device is characterized in that, comprise that with the lower part, block scheme is seen Fig. 1:
At first but measured device 401 is placed on the temperature platform 403 of temperature adjustment; Computing machine 100 is centers that enforcement is measured, and measures transmission, measurement data transmission and the preservation of instruction and finishes by computing machine 100 controls; Computing machine 100 picks out collector 205 by bus interface 200; Collector 205 is divided into three the tunnel, and being connected to one can computer-controlled three-way switch 303, finishes the collection of three steady operation electrical quantitys: the one tunnel directly by three-way switch 303, receives measured device 401, directly gathers the voltage at 401 two ends; Behind a measuring current sampling resistor 501 of second line serial connection of drawing from collector 205, insert three-way switch 303, be linked into measuring current source 201 from three-way switch 303 again; Voltage on the collecting test current sampling resistor 501 obtains the measuring current of measured device 401; One end in measuring current source 201 will be received interface 200, accepts the working current instruction of being set by computing machine 100; 201 the other end is received current switch 301; Behind a working current sampling resistor 502 of the 3rd line serial connection of drawing from collector 205, insert three-way switch 303, be linked into working current source 202 from three-way switch 303 again; The voltage of collecting work current sampling resistor obtains the working current of measured device 401; One of working current source 202 terminates to interface 200, accepts the working current instruction of being set by computing machine 100; Working current source 202 other ends are received current-controlled switch 301;
The working current of the measuring current of 201 outputs from the measuring current source and 202 outputs from the working current source is inserted at the input two ends of current-controlled switch 301 respectively; Two output terminals one terminate to reference load 402, and terminate to measured device 401; The another one control end is received timing sequencer 203; By 201 measuring currents of exporting from the measuring current source of computer settings, in measuring process, pass through current-controlled switch 301 always, output on the measured device 401; By 202 working currents of exporting that computing machine 100 is set from the working current source, be subjected to the control end of current-controlled switch 301, export the sequential control of coming from timing sequencer 203; Timing sequencer 203 1 terminates to interface 200, accepts the instruction of being set by computing machine 100; When device was worked, electric current outputed on the measured device 401; During measurement, this electric current then flows to reference load 402;
The voltage of measured device 401 two ends under measuring current by more than the sample frequency 1.25Mhz, 12 above high speed acquisition devices 204 finish; Collector 204 1 terminates to interface 200, accept and send instruction and data from or terminate to computing machine 100, and to intercept amplifier 302 at a high speed; Intercepting amplifier 302 receives measured device 401 at a high speed; The function that intercepts amplifier 302 at a high speed is that most of indeclinable composition is fallen in intercepting, effectively amplifies temperature variant part, guarantees the precision of measuring; The voltage at measured device 401 two ends is after intercepting at a high speed amplifier 302 interceptings and amplifying under the measuring current, gathered and passed to computing machine 100 by high speed acquisition device 204, demonstrates the voltage waveform of collection.
Intercepting amplifier 302 has picked out reference voltage potentiometer 304 at a high speed.When not connecing reference voltage potentiometer 304, at a kind of device of junction voltage, the voltage of intercepting is fixed.When the junction voltage of device changes greatly, or during different components, the part of intercepting is very few or too much all can not effectively amplify temperature variant part.Like this can sacrifice in measurement accuracy.After increasing reference voltage potentiometer 304, device whatsoever, by the waveform that graphoscope is gathered, regulator potentiometer, the selected junction voltage part that will intercept.The influence that not changed by junction voltage can both fully guarantee to utilize between the amplification region of amplifier at every turn.
Use the device of above-mentioned connection, measure the method for measured device 401 temperatures coefficient:
1 is placed on measured device 401 contact on the temperature platform 403 of adjustable temperature; Connect the two ends lead on the measured device 401; If the temperature of temperature platform is T1;
2 by computing machine 100 working current to be set be zero, and a gating pulse is set; This gating pulse has the high-low level two states in time; The time that high level continues is tH, and low duration is tL; This current impulse is to continue to repeat in time; With reference to figure 2;
3 computing machines 100 at every turn by the negative edge of high level to low transition, trigger high speed acquisition device 204 in gating pulse by interface 200, gather through intercepting amplifier 302 at a high speed, intercept, amplify the both end voltage of measured device 401 under measuring current;
4 intercept amplifier 302 at a high speed fixes intercepting, amplifies in measured device 401 both end voltage and contain temperature variant part, exports to high speed acquisition device 204; Because the negative edge of each gating pulse is the voltage at triggering collection measured device 401 two ends all, can be by after the computer acquisition repeatedly, do average again, obtain under the T1 temperature, undressed when making electric current, 401 both end voltage Vpn1 under the measuring current pass to computing machine 100 through interface 200, and show the junction voltage waveform of gathering;
5 raise temperature to T2 with temperature platform, and repeating step 3, step 4 are measured the terminal voltage Vpn2 under the same test electric current, and its temperature coefficient is=(Vpn2-Vpn1)/(T2-T1); It is the every rising of the temperature change amount of PN junction voltage under the measuring current once; Perhaps select repeatedly to change temperature platform temperature, the measurement of repeating step 3,4; Utilize least square method to calculate temperature coefficient then.Select repeatedly to change the temperature platform temperature and can improve the temperature coefficient precision.After temperature coefficient is measured, the data deposit.As long as keep identical measuring current, temperature coefficient just can use.
In step 4, when using the reference voltage potentiometer 304 that increases, by regulator potentiometer, in the junction voltage waveform that computing machine 100 shows, the part that selected intercepting is amplified; Can fully intercept under the measuring current like this, vary with temperature part in measured device 401 both end voltage, improve measuring accuracy; In case behind the selected reference voltage potentiometer 304, just can not regulate 304 resistance value again.
Use the device of above-mentioned connection, measure the method for measured device temperature rise and thermal resistance
I, measured device 401 contact is placed on the temperature platform 403 of adjustable temperature; Connect 401 two leads of measured device; If the temperature platform temperature is T0;
II, keep under the measuring current identical with measuring temperature coefficient, it is zero setting working currents by computing machine 100, and a gating pulse is set; This gating pulse has the high-low level two states in time; The time that high level continues is tH, and low duration is tL; This current impulse is to continue to repeat in time; With reference to figure 2; Computing machine 100 at every turn by the negative edge of high level to low transition, triggers high speed acquisition device 204 in gating pulse by interface 200, collection is through intercepting amplifier 302 at a high speed, intercepting, amplify measured device 401 under the T0 temperature, undressed when making electric current, the both end voltage under the measuring current; Because each negative edge is the voltage of triggering collection measured device 401 both sides all, can gather repeatedly, does on average obtaining V1 again; With reference to figure 3.
III, set by computing machine 100 and to add the work current impulse; This pulse is from 0 to t1 time period, and working current is zero, has only measuring current I0; T1 begins constantly, and this current impulse is working current Iw and measuring current I0 sum; To t2 constantly, the working current of loading is zero, and the duration section of working current is tH; With reference to figure 4;
IV, execution process of measurement; Computing machine 100 sends instruction and arrives sequential generator 203 through interface 200, carries out the 0-t1 time period of current impulse, and have only measuring current to pass through measured device 401 this moment; After t1 arrived constantly, computing machine 100 sent instruction and arrives sequential generator 203 through interface 200, carries out the t1-t2 time period of current impulse, was loaded into measured device 401 after working current and the measuring current stack; Operating voltage is V2; This moment, working current raise the measured device temperature;
V, after t2 arrives constantly, the current direction reference load 402 at computing machine 100 Control current gauge tap 301 places; Trigger high speed acquisition device 204 simultaneously, gather through intercepting amplifier 302 at a high speed, intercepting, amplify measured device 401 at working current duration tH in the time period, owing to load after electric power causes temperature rise the both end voltage V3 under the measuring current; With reference to figure 4;
The V1 difference that VI, the V3 that records and Step II record is exactly because working current produces temperature rise, the variation that brings; Increase in time, the difference of V3 and V1 diminishes, and goes to zero gradually; The poor V3-V1 of V3 and V1 is exactly in the working current application time section tH of the setting working current measured and setting divided by temperature coefficient α again, makes the temperature rise of the generation of measured device 401, Δ T=(V3-V1)/α;
The collection of electric current and voltage during VII, measured device 401 work is that tH with working current pulse among the Step II I is set at and surpasses 5 minutes, makes it to be stable DC work; The operation executive routine; Gathered respectively gather voltage V2, working current Iw and the measuring current I0 at measured device 401 two ends, and outputed to computing machine 100 by computing machine 100 control three-way switches 303, collector 205 this moment; After the collection, computing machine 100 Control work electric currents are zero; For non-luminescent device, the power=V2 that applies * Iw, temperature rise is exactly a thermal resistance divided by power, Rth=Δ T/ (V2 * Iw).
In Step II and V, when using the reference voltage potentiometer 304 that increases, by regulator potentiometer, in the junction voltage waveform that computing machine 100 shows, the part that selected intercepting is amplified outputs to high speed acquisition device 204; Can fully intercept under the measuring current like this, vary with temperature part in measured device 401 both end voltage, improve measuring accuracy.
In Step II I, because the value of t2 can be set a n measurement group by computer settings; In this measurement group, except tH increased, all the other were constant at every turn, i.e. tH1, and tH2, tH3.。。THn; Wherein n is 1,2 ... natural number; Current duration tH value is from several microseconds, is increased to hundreds of second; With reference to figure 5; Under each tHn, can both record a temperature rise Δ Tn; With Δ T is ordinate, is that horizontal ordinate runs a curve with working current duration tH; This curve is exactly after measured device 401 applies electric current, and the internal temperature process over time that raises promptly adds thermal response curve; With reference to figure 6; Can obtain the heat dissipating of a lot of measured devices by this curve; For non-luminescent device can be ordinate with thermal resistance Rth also, and tH is a horizontal ordinate, draws Rth and tH curve.
Description of drawings
Fig. 1 proving installation block diagram
Fig. 2 gating pulse sequential chart
Fig. 3 applies before and after the working current, under the measuring current of measured device two ends and the voltage under the working current
Fig. 4 adds the time sequential pulse of work electric current
The time sequential pulse of a n measurement group of Fig. 5
Fig. 6 adds the synoptic diagram of thermal response curve
Embodiment
At first but measured device 401 is placed on the temperature platform 403 of temperature adjustment, and temperature platform can use semiconductor cooler to constitute.Computing machine 100 is centers that enforcement is measured, and measures transmission, measurement data transmission and the preservation of instruction and finishes by computing machine 100 controls, and computing machine can use IBM series compatible.Computing machine 100 picks out collector 205 by bus interface 200, and bus interface can use 74HC245 to constitute, and collector can use high-speed A/D converter AD574.Collector 205 is divided into three the tunnel, being connected to one can computer-controlled three-way switch 303, and three-way switch can use IRF530 to constitute, and finishes the collection of three steady operation electrical quantitys: the one tunnel directly by three-way switch 303, receive measured device 401, directly gather the voltage at 401 two ends; Behind a measuring current sampling resistor 501 of second line serial connection of drawing from collector 205, sampling resistor can use the alloy strip resistance of low-temperature coefficient, insert three-way switch 303, be linked into measuring current source 201 from three-way switch 303 again, the measuring current source uses OP07 and IRF9530 to constitute.Voltage on the collecting test current sampling resistor 501 obtains the measuring current of measured device 401.One end in measuring current source 201 will be received interface 200, accepts the working current instruction of being set by computing machine 100.201 the other end is received current switch 301, and current switch can use IRF530 to constitute; Behind a working current sampling resistor 502 of the 3rd line serial connection of drawing from collector 205, sampling resistor uses the alloy strip resistance of low-temperature coefficient equally, insert three-way switch 303, be linked into working current source 202 from three-way switch 303 again, the working current source uses OP07 and IRF9530 to constitute.The voltage of collecting work current sampling resistor obtains the working current of measured device 401.One of working current source 202 terminates to interface 200, accepts the working current instruction of being set by computing machine 100.Working current source 202 other ends are received current-controlled switch 301.
The working current of the measuring current of 201 outputs from the measuring current source and 202 outputs from the working current source is inserted at the input two ends of current-controlled switch 301 respectively; Two output terminals one terminate to reference load 402, and reference load is used the device that has close forward voltage drop with measured device, and one terminates to measured device 401; The another one control end is received timing sequencer 203, and timing sequencer can be made of single-chip microcomputer MCS-51.By 201 measuring currents of exporting from the measuring current source of computer settings, in measuring process, pass through current-controlled switch 301 always, output on the measured device 401.By 202 working currents of exporting that computing machine 100 is set from the working current source, be subjected to the control end of current-controlled switch 301, export the sequential control of coming from timing sequencer 203.When device was worked, electric current outputed on the measured device 401; During measurement, this electric current then flows to reference load 402.
The voltage of measured device 401 two ends under measuring current by more than the sample frequency 1.25Mhz, 12 above high speed acquisition devices 204 finish, the high speed acquisition device can use high-speed A/D converter AD574.Collector 204 1 terminates to interface 200, accept and send instruction and data from or terminate to computing machine 100, and to intercept amplifier 302 at a high speed, intercepting amplifier at a high speed can be made of hypervelocity operational amplifier OPA643.Intercepting amplifier 302 receives measured device 401 at a high speed.The function that intercepts amplifier 302 at a high speed is that most of indeclinable composition is fallen in intercepting, effectively amplifies temperature variant part, guarantees the precision of measuring.The voltage at measured device 401 two ends is after intercepting at a high speed amplifier 302 interceptings and amplifying under the measuring current, gathered and passed to computing machine 100 by high speed acquisition device 204, demonstrates the voltage waveform of collection.
Intercepting amplifier 302 has picked out reference voltage potentiometer 304 at a high speed, and the reference voltage potentiometer can constitute with accurate multiturn potentiometer.
The embodiment of the temperature rise of semiconductor PN node diode device of the present utility model and thermal resistance measurement method as previously mentioned, this place repeats no more.
Claims (2)
1, a kind of temperature rise of semiconductor PN node diode device and thermal resistance measurement device is characterized in that, comprise with the lower part:
Measured device (401) but be placed on the temperature platform (403) of temperature adjustment; Computing machine (100) is the center that enforcement is measured, and measures transmission, measurement data transmission and the preservation of instruction and finishes by computing machine (100) control; Computing machine (100) picks out collector (205) by bus interface (200); Collector (205) is divided into three the tunnel, being connected to one can computer-controlled three-way switch (303), finish the collection of three steady operation electrical quantitys: the one tunnel directly by three-way switch (303), receives measured device (401), directly gathers the voltage at (401) two ends; Behind the second line measuring current sampling resistor of serial connection (501) of drawing from collector (205), insert three-way switch (303), be linked into measuring current source (201) from three-way switch (303) again; Collecting test current sampling resistor (501) is gone up voltage, obtains the measuring current of measured device (401); One end in measuring current source (201) will be received interface (200), accepts the working current instruction of being set by computing machine (100); The other end in measuring current source (201) is received current switch (301); Behind the 3rd the line working current sampling resistor of serial connection (502) of drawing from collector (205), insert three-way switch (303), be linked into working current source (202) from three-way switch (303) again; The voltage of collecting work current sampling resistor obtains the working current of measured device (401); One of working current source (202) terminates to interface (200), accepts the working current instruction of being set by computing machine (100); Working current source (202) other end is received current-controlled switch (301);
The input two ends of current-controlled switch (301) are inserted respectively from measuring current of measuring current source (201) output and the working current of exporting from working current source (202); Two output terminals one terminate to reference load (402), and one terminates to measured device (401); The another one control end is received timing sequencer (203); By the measuring current from measuring current source (201) output of computer settings, in measuring process, pass through current-controlled switch (301) always, output on the measured device (401); The working current from working current source (202) output by computing machine (100) is set is subjected to the control end of current-controlled switch (301), exports the sequential control of coming from timing sequencer (203); Timing sequencer (203) one terminates to interface (200), accepts the instruction of being set by computing machine (100); When device was worked, electric current outputed on the measured device (401); During measurement, this electric current then flows to reference load (402);
The voltage of measured device (401) two ends under measuring current by more than the sample frequency 1.25Mhz, 12 above high speed acquisition devices (204) finish; Collector (204) one terminates to interface (200), accept and send instruction and data from or to computing machine (100), one terminates to and intercepts amplifier (302) at a high speed; Intercepting amplifier (302) receives measured device (401) at a high speed; Computing machine (100) is gathered and passed to the voltage at measured device under the measuring current (401) two ends by high speed acquisition device (204) after intercepting amplifier (302) intercepting amplification at a high speed, demonstrate the voltage waveform of collection.
2, the temperature rise of semiconductor PN node diode device according to claim 1 and thermal resistance measurement device is characterized in that, intercepting amplifier (302) picks out reference voltage potentiometer (304) at a high speed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200520128067 CN2901333Y (en) | 2005-10-14 | 2005-10-14 | Temperature rise and heat resistance detector of semiconductor PN junction diode device |
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| CN 200520128067 CN2901333Y (en) | 2005-10-14 | 2005-10-14 | Temperature rise and heat resistance detector of semiconductor PN junction diode device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759544A (en) * | 2012-07-06 | 2012-10-31 | 东南大学 | Method for testing thermal resistance of high-power silicon carbide diode |
| CN104807552A (en) * | 2014-01-29 | 2015-07-29 | 上海力兹照明电气有限公司 | Low-cost high-precision LED node temperature measuring instrument |
| CN105241921A (en) * | 2015-11-07 | 2016-01-13 | 北京工业大学 | Method and device for nondestructive measurement of heat resistance of travelling wave tube |
| CN107490736A (en) * | 2017-08-07 | 2017-12-19 | 北京工业大学 | The method and device that a kind of nondestructive measurement electronic functional module internal temperature and thermal resistance are formed |
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2005
- 2005-10-14 CN CN 200520128067 patent/CN2901333Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759544A (en) * | 2012-07-06 | 2012-10-31 | 东南大学 | Method for testing thermal resistance of high-power silicon carbide diode |
| CN102759544B (en) * | 2012-07-06 | 2014-04-16 | 东南大学 | Method for testing thermal resistance of high-power silicon carbide diode |
| CN104807552A (en) * | 2014-01-29 | 2015-07-29 | 上海力兹照明电气有限公司 | Low-cost high-precision LED node temperature measuring instrument |
| CN105241921A (en) * | 2015-11-07 | 2016-01-13 | 北京工业大学 | Method and device for nondestructive measurement of heat resistance of travelling wave tube |
| CN105241921B (en) * | 2015-11-07 | 2018-09-04 | 北京工业大学 | A kind of method and device of nondestructive measurement travelling-wave tubes thermal resistance |
| CN107490736A (en) * | 2017-08-07 | 2017-12-19 | 北京工业大学 | The method and device that a kind of nondestructive measurement electronic functional module internal temperature and thermal resistance are formed |
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Granted publication date: 20070516 Termination date: 20101014 |