CN107208256A - 使用牺牲支持体的三维金属结构体的打印 - Google Patents
使用牺牲支持体的三维金属结构体的打印 Download PDFInfo
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- CN107208256A CN107208256A CN201680005719.1A CN201680005719A CN107208256A CN 107208256 A CN107208256 A CN 107208256A CN 201680005719 A CN201680005719 A CN 201680005719A CN 107208256 A CN107208256 A CN 107208256A
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- metal material
- metal
- support structure
- object construction
- body support
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- Chemical Kinetics & Catalysis (AREA)
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Abstract
一种3D打印方法,其包括将第一金属材料打印到基板上作为支持结构体(48)。将比所述第一金属材料阳极性低的第二金属材料以与所述支持结构体接触的方式打印到所述基板上作为目标结构体(46)。通过应用原电池效应以选择性地腐蚀所述第一金属材料而将所述支持结构体从所述目标结构体以化学方式除去。
Description
相关申请的交叉引用
此申请要求2015年1月19日提交的U.S.临时专利申请62/104,866的权益,其通过引用并入本文。
技术领域
本发明一般地涉及三维(3D)结构体的打印,并且特别地涉及通过复杂的3D拓扑技术制作结构体的方法和系统。
背景技术
在激光直写(LDW)技术中,使用激光束通过受控的材料烧蚀(切除)或沉积形成具有空间分辨的3D结构的图案化表面。激光诱导向前转移(LIFT)为可应用于在表面上沉积微图案的LDW技术。
在LIFT中,激光光子提供将小体积的材料从供体膜弹射到受体基板的驱动力。典型地,所述激光束与涂覆于非吸收性载体基板上的供体膜的内侧相互作用。换言之,入射激光束在光子被所述膜的内表面吸收之前传播通过透明载体。在高于某一能量阈值下,将材料从供体膜喷向基板的表面,该基板通常以与所述供体膜紧密靠近或甚至与其接触的方式放置在现有技术中已知的LIFT系统中。为了控制在经照射的膜的体积内产生的向前推动的推力,可改变所施加的激光能量。Nagel和Lippert在发表于Nanomaterials:Processingand Characterization with Lasers中的“Laser-Induced Forward Transfer for theFabrication of Devices,”(Singh等人编的(Wiley-VCH Verlag GmbH&Co.KGaA,2012)的第255-316页)中提供LIFT在微制作方面的原理和应用的有用调查,。
使用金属供体膜的LIFT技术已经开发用于多种应用例如电路修复。例如,PCT国际公布WO 2010/100635(其公开内容通过引用并入本文)描述了修复电路的系统和方法,其中使用激光预处理在电路基板上形成的导体的导体修复区域。将激光束施加到供体基板,其方式导致供体基板的一部分从其分离并且转移到预定导体位置。
作为另一实例,(在本专利申请的优先权日之后公布的)PCT国际公布WO 2015/056253(其公开内容通过引用并入本文)描述了材料沉积方法,其中透明供体基板具有反向的第一和第二表面以及在第二表面上的多个含有不同的相应材料的供体膜。供体基板位于受体基板的附近,其中所述第二表面面向所述受体基板。引导激光辐射的脉冲穿过供体基板的第一表面并且撞击到供体膜上以诱导包含所述不同材料的大量混合物的熔滴从供体膜喷出到受体基板上。这种LIFT技术的进一步细节描述于PCT国际公布WO2015/181810(也在本专利申请的优先权日之后公布)中,其公开内容同样通过引用并入本文。
一些3D制作技术使用牺牲支持体产生期望的结构体。例如,U.S.专利申请公布2015/0197862描述添加剂金属沉积工艺,其中构造零件根据由期望部件的三维限定所产生的构造计划制造。所述构造计划具有对应于期望部件的第一组维度(尺寸)且包括支持结构体。所述建造零件(经受)化学蚀刻剂使得支持结构体从建造零件除去并且将对应于期望部件的建造零件的维度减小到第二组维度。
发明内容
下文描述的本发明的实施方式提供用于打印三维(3D)结构体的改进方法和设备。
因此,根据本发明一实施方式提供3D打印方法,其包括在基板上打印第一金属材料作为支持结构体,和在所述基板上以与支持结构体接触的方式打印比所述第一金属材料阳极性低的第二金属材料作为目标结构体。通过应用原电池效应以选择性地腐蚀第一金属材料而将支持结构体以化学方式从目标结构体除去。
在一些实施方式中,第一材料和第二材料中的一种包括纯金属,且第一材料和第二材料中的另一种包括该纯金属的合金。典型地,所述纯金属构成所述合金的至少90%。所述第一材料为纯金属且所述第二材料为合金;或所述第二材料为纯金属且所述第一材料为合金;或所述第一材料和第二材料为纯金属的不同合金。
在一些实施方式中,打印第一金属材料和第二金属材料包括将激光辐射的脉冲分别引导到第一和第二薄膜上以诱导第一材料和第二材料的熔滴激光诱导向前转移(LIFT)到所述基板上。在公开的实施方式中,第一金属材料和第二金属材料的至少一种包括至少两种组分材料的混合物,并且引导激光辐射的脉冲包括提供其上重叠包括所述组分材料各自的相应层的多个薄膜层的透明供体基板,和用激光辐射的脉冲照射供体基板以诱导其中所述组分材料混合在一起的熔滴的喷出。
在一个实施方式中,所述方法包括在第一金属材料和第二金属材料的至少一种上打印第三材料,其中所述目标结构体在除去支持结构体之后包括第二金属材料和第三材料。例如,第三材料可包括介电材料。
在其它实施方式中,在第一金属材料上打印第二金属材料使得目标结构体具有容纳所述第一金属材料的空腔,并且以化学方式除去所述支持结构体包括通过原电池效应将第一金属材料从空腔蚀刻出来。在一个实施方式中,所述方法包括打印比第一金属材料的阳极性(负极性,anodic)低的阴极蚀刻-辅助结构体使其嵌入到空腔中的第一金属材料内以在蚀刻期间促进原电池效应,且所述方法包括在将第一金属材料蚀刻出来之后将蚀刻-辅助结构体从空腔除去。
在另外的实施方式中,打印第一金属材料和第二金属材料包括打印第一金属材料和第二金属材料的散布粒子,并且以化学方式除去所述支持结构体包括通过原电池效应将所述第二金属材料的粒子蚀刻掉,使得在除去所述支持结构体之后残留的目标结构体是多孔的。在一个实施方式中,打印所述散布粒子包括改变所述目标结构体的区域上的第一金属材料的粒子的相对密度,使得在除去所述支持结构体之后残留的第二金属材料具有在所述目标结构体的区域上变化的孔隙率。
根据本发明的一实施方式还提供制作设备,其包括打印台,其配置成在基板上打印第一金属材料作为支持结构体和在基板上以与支持结构体接触的方式打印比所述第一金属材料阳极性低的第二金属材料作为目标结构体。蚀刻台配置成通过应用原电池效应用以选择性地腐蚀第一金属材料而将支持结构体从目标结构体中以化学方式除去。
结合附图通过以下实施方式的详细描述将更充分地理解本发明,在图中:
附图说明
图1为根据本发明一实施方式的3D打印系统的示意性侧视图和方块图;
图2为显示根据本发明一实施方式的具有不同组成的液滴的LIFT打印的示意性细节视图;
图3A为根据本发明一实施方式的经打印的3D结构体和牺牲支持体的示意性图形表示;
图3B为根据本发明一实施方式的图3A的在电蚀刻牺牲支持体之后的经打印的3D结构体的示意性图形表示;
图4A为根据本发明一实施方式的包括填充有阳极牺牲支持体的空腔和在空腔中的阴极蚀刻-辅助结构体的经打印的3D结构体的示意性截面视图;
图4B为根据本发明一实施方式在电蚀刻牺牲支持体的加工期间的图4A的经打印的3D结构体的示意性截面视图;
图4C为根据本发明一实施方式在完成蚀刻-辅助结构体的电蚀刻和除去之后的图4A的经打印的3D结构体的示意性截面视图;
图5A为根据本发明一实施方式的其中散布阳极牺牲材料的液滴和阴极材料的液滴的经打印的3D结构体的示意性截面视图;和
图5B为根据本发明一实施方式的通过将阳极牺牲材料从图5A的结构体电蚀刻(掉)而产生的多孔3D结构体的示意性截面视图。
具体实施方式
概述
用复杂拓扑技术打印3D结构体通常需要使用牺牲材料。例如,当由某种原材料(初始材料,primary material)制成的目标结构体含有凹陷(例如空腔或下部切槽(undercut))时,首先在凹陷的地方打印牺牲材料,并且将原材料打印于其上。然后通过物理和/或化学手段将牺牲材料除去。这样的牺牲材料的打印和除去工艺通常是复杂且昂贵的,并且对于这样的工艺可用的材料的选择可为有限的。
本文描述的本发明的实施方式提供用于3D打印金属结构体的改进技术。可使用这些技术以高分辨率打印具有宽范围的形状、材料和物理性质的3D结构体。在公开的实施方式中,在基板上打印牺牲金属材料作为支持结构体,并且在所述基板上以与所述支持结构体接触的方式打印原金属材料作为目标结构体。选择相比于原金属材料具有较低的电极电位(较低的电负性,其意味着牺牲材料是更高阳极性)的牺牲金属材料。结果,在打印目标结构体之后,可借助原电池效应(其选择性地腐蚀牺牲金属材料)将支持结构体以化学方式除去。该加工步骤在本文中称为电腐蚀或等同地称为电蚀刻。
原电池效应已经被知晓几个世纪,但是通常视为不期望的,当不同金属和电解质相接触时导致可能是灾难性的腐蚀。当使两种金属彼此接触时,在所述金属之间形成取决于它们的相对电负性(也称为它们的阳极指数)水平的电压。该电压驱动电流在两种金属之间流动。当所述金属浸没在导电溶液中时,形成驱动腐蚀性原电池效应的有效电路。该过程导致较高阳极性的金属即具有较低电负性水平的较惰性金属被消耗和腐蚀,而阴极金属基本上不受影响。该过程可在没有任何外部驱动电位的情况下进行,只要存在用于携带电流并且闭合电路的合适介质(例如溶液或蒸气)。
在公开的实施方式中,如下文进一步描述的,可使用相同的打印技术例如LIFT、可能甚至在相同的加工步骤中一起打印原金属和牺牲金属。以这种方式使用LIFT使得可以高精度、高效地制造目标结构体和支持结构体两者。在此上下文中可使用LIFT打印打印作为组分材料的混合物、例如组分金属的合金的材料。在该打印阶段中可使用的LIFT技术描述于例如以上提到的PCT国际公布WO 2015/056253中。还可以打印另外的材料,在电蚀刻之后作为目标结构体的一部分保留,其不仅包括另外的金属材料而且包括非金属材料例如电介质。
虽然下述实施方式具体基于LIFT打印,但是本发明的原理可使用本领域已知的其它适宜的3D打印技术例如熔融金属喷射在加以必要的变更的情况下实现。这样的替代性打印技术在本上下文中的使用也视为落入本发明的范围内。
典型地,通过电蚀刻除去支持结构体的工艺通过将完成的经打印的3D结构体浸没在导电液体溶液中实施。增大溶液的浓度可加快腐蚀速率。可用于更快地驱动双金属腐蚀反应的其它因素,包括调节电解质的组成、pH和电导率。在涉及氧还原的水溶液中,还可增加通风和氧气供应以增大腐蚀速率。
在这样的腐蚀性电过程中,速率和选择性还取决于原材料和牺牲材料之间的表面积之比。例如,如果原材料比牺牲材料具有大得多的表面积,则蚀刻速率将加快。替代地,在本发明的一些实施方式中,当牺牲材料部分比原材料具有大的表面积时,可以以与支持结构体电接触的方式打印由阴极性较高的材料制成的蚀刻-辅助结构体以驱动更快的腐蚀。进一步替代地或另外地,可施加受控的外部电位偏压以加快原电池效应。
在本发明的一些实施方式中,原金属材料和牺牲金属材料在组成上非常类似。例如,材料之一(其可为原材料或牺牲材料)可为纯金属,而另一种包括该纯金属的合金。选择合金以给出原材料和牺牲材料之间的期望的电负性差。替代地,原材料和牺牲材料两者可为合金、例如相同纯金属和少量不同组分的合金,其给出期望的电负性差。
为了发生期望的电腐蚀,典型地只需要原材料和牺牲材料之间在组成上的小的差异。典型地,纯金属可构成所述合金的至少90%,并且在很多情形中甚至构成合金的大于95%。这些类似材料的使用简化打印工艺,因为纯金属和合金两者将具有类似的物理性质,其继而决定打印性质。这样的物理性质包括例如热性质(例如熔融温度、导热性、热容)、润湿性(在经打印的结构体上)、表面张力(作为液化金属)和机械性质(例如硬度)。
系统描述
图1为根据本发明一实施方式的3D打印系统10的方块图和侧视图。系统10包括LIFT台20,其在受体基板22上以与支持结构体48接触的方式打印由两种不同金属材料制成的目标结构体46。蚀刻台50通过施加原电池效应以选择性地腐蚀支持结构体的金属材料而将支持结构体48从目标结构体46以化学方式除去。
LIFT台20包括其中激光26发出脉冲辐射的光学组装体24,该脉冲辐射通过适宜的光学器件30聚焦到LIFT供体板32上。供体板32包括具有至少一个沉积于其上的供体膜36的透明供体基板34。定位组装体38确定供体基板34和/或受体基板22的位置使得供体基板靠近受体基板的上表面,其中供体膜36面向受体基板和在其间存在小的间隙(典型地不超过几百微米,且如果可能的话,更小)。虽然定位组装体38在图1中示出,但是出于简洁,作为在受体基板22下面的基础X-Y-Z坐标(stage),实际上LIFT台20中的定位组装体另外或替代地能够确定供体基板34和/或光学组装体24的元件的位置,其对于本领域技术人员将是显然的。
供体基板34典型地包括玻璃或塑料板或其它适宜的透明材料,而供体膜36包括适宜的供体材料,例如一种或多种纯金属和/或金属合金。典型地,供体膜的厚度不超过几微米。以下参考图2进一步地描述供体膜36的结构和组成。在本文描述的技术的一些应用中,供体膜可另外包括一种或多种介电材料以及半导体和/或流变材料或这样的材料的组合。
光学器件30聚焦来自激光26的光束42使其穿过供体基板34的外表面并撞击到供体膜36上,从而导致流体的液滴44从供体膜36喷出并飞越间隙而着陆到受体基板22上。所述流体包括供体膜36中的熔融态材料,其然后在受体表面上硬化而形成具有由打印图案限制的形状的固体零件、例如目标结构体46和支持结构体48。在控制单元40的控制下的扫描器28、例如旋转镜和/或声-光光束偏转器扫描激光束42以照射供体膜36上的不同位点并且因此在受体基板22上的适当位置处产生期望形状的结构体。
激光26包括例如具有倍频输出的脉冲Nd:YAG激光,其允许通过控制单元40方便地控制的脉冲振幅。典型地,控制单元40包括通用计算机,其具有用于控制和接收来自光学组装体24、运动组装体38和LIFT台20的其它元件的反馈的适宜界面。本发明人已经发现,为了良好的LIFT沉积结果,最佳脉冲持续时间在0.1ns-1ns的范围,但是取决于应用要求可使用更长或更短的脉冲。为了调节通过激光束在供体膜36上形成的焦点的尺寸,可类似地控制光学器件30。
液滴44的尺寸特别地由激光脉冲能量、持续时间以及供体膜的焦点尺寸和厚度决定。前述PCT国际公布2015/181810描述LIFT技术和这样的参数:可应用其使得各激光脉冲导致单个的、相对大的液滴从供体膜中喷出。可在LIFT台20中有利地应用这些技术和参数,因为液滴以准确的方向性喷向受体基板22,使得可在液滴的喷出期间保持供体膜36离受体基板至少100μm的距离并且精确地产生期望的结构体。
在公开的实施方式中,LIFT台20导致两种或更多种具有不同组成的流体的液滴44从不同的供体膜36喷出。典型地,通过引导来自激光26的光束42撞击到供体膜36(在相同供体基板34或不同供体基板上)的包含不同材料的不同区域上而喷出不同流体。可将不同流体顺序地喷向受体基板22上的相同位置和/或喷向不同位置,以打印期望的支持和目标结构体。用该方式以基本上任何期望的图案和层级(等级,gradation)来混合材料的能力是本技术相比于本领域已知的制作方法的显著优势。
如之前指出的,为了使沉积的供体材料积累到期望厚度,控制单元40控制扫描器28和光学组装体24的其它元件以将来自膜36的供体材料写入到受体基板22上的适当位置并且按需实现多个通道。例如,LIFT台20可以该方式操作以制造具有一个或多个小于1mm的维度(尺寸)(高度、宽度和厚度)的多种3D形状的固体零件。这些维度的至少一个可小于100μm,并且在一些情形下小于10μm,由此产生精确形状的微型(或者甚至显微)零件。替代地,可操作LIFT台20以打印实质上更大尺寸的结构体。用这种方式在期望位置上依次使用原(材料)供体膜和牺牲(材料)供体膜可以相继通过(pass)打印原材料和牺牲材料的多个交叉层。
在蚀刻台50中,将在LIFT台20中已经将目标结构体46和支持结构体48形成于其上的基板22浸没到含有适宜的电解质溶剂52的槽中。如上解释的,在目标结构体46中的原金属材料和支持结构体48中阳极性比原金属材料高的牺牲材料之间的接触导致支持结构体48在溶剂52中的电腐蚀,同时保留目标结构体46基本未受影响。结果,通过台50将支持结构体以化学方式除去,在其位置处留下空腔54。于是,目标结构体46准备进一步加工。
虽然为了说明的意图,目标结构体46和空腔54在图中作为简单的拓扑形状示出,但是在系统10中可类似地制造更复杂的结构体。当所述结构体具有内部空腔时,通过LIFT台20打印的目标和支持结构体设计成保留用于溶剂52到达为了除去支持结构体而计划在其上进行腐蚀性电作用的位置的连续路径。也可打印另外的蚀刻-辅助结构体,如以下在图4A-C中说明的。
原材料和牺牲材料
如上解释的,出于制作的容易性和可靠性,可期望(虽然非必须),打印支持结构体48的牺牲材料为与用于打印目标结构体46的原材料具有类似组成的金属或金属合金。例如通过使原金属和阳极性较高的金属合金化可使牺牲材料变得阳极性更高,从而提供所需的电位差以在蚀刻台50中在所需方向上驱动腐蚀性过程。替代地,所述原材料可为使其相对于牺牲材料阴极性更高的合金。在任一情形中,典型地选择原材料以给予目标结构体某些期望的材料性质(例如高电导率或高抗张强度)。于是选择这样的牺牲材料:其在期望地拥有和原材料类似的热性质和其它物理性质的同时比原材料的阳极性高。由于该原因,纯金属和该相同金属的合金通常成为良好的组合,或如果可能的话的化,该相同纯金属的两种不同合金。
作为第一类型的组合(纯金属原材料和牺牲合金)的实例,为了打印铜3D目标结构体,可使用纯铜金属作为原材料,并且Cu/Al合金可充当阳极性较高的牺牲材料。为了以正确的方向驱动电腐蚀反应只需要低百分比的铝,典型地小于10%且可能甚至小于5%。其它合金例如Cu/Mg可用于类似的效果。然而,如果支持结构体具有比目标结构体显著更大的表面积,则可期望的是,例如可通过增加铝浓度来增大原材料和牺牲材料之间的电负性差。该情形中的溶剂52可包括例如盐酸水溶液或氯化铁水溶液中的氯化铜。
作为以上提到的第二类型的替代性实例,可使用铜金属作为牺牲材料,并且Cu/Ag合金作为阴极性较高的原结构材料。该选择将导致由Cu/Ag制成的3D结构体。同样地,典型地需要低百分比的银来驱动蚀刻台50中的反应。替代地,金或钯可与铜合金化以产生原材料。
作为其它替代方案,原材料和牺牲材料两者均可为合金,或者两者均可为纯金属,只要实现适当的电负性差。
下表I显示原材料和牺牲材料的组合以及适宜溶剂的一些另外实例。其它组合对于本领域技术人员在阅读本说明书之后是显然的,并且视为落在本发明的范围内。
表I–打印材料和溶剂的实例
还可使用系统10打印由几种原材料成分而不是单一原金属制成的3D结构体。在该情形中,选择牺牲材料的组成以提供所需的电负性差,其中该牺牲材料比目标结构体中的所有原金属和金属合金的阳极性高。例如,目标结构体可打印自纯铜和阴极性较高的铜合金、例如Cu97%/Ag3%,而选择比Cu和Cu/Ag两者的阳极性高的单一的常见牺牲材料、例如Cu97%/Al3%。LIFT台20以所选择的设计打印原材料和牺牲材料使得在所有组件之间保持电接触。只要牺牲材料比所有原金属的阳极性高,牺牲材料在蚀刻台50中将首先降解并除去。
另外或替代地,可使用系统10制造复杂金属/介电结构体,而不只是金属结构体。例如,通过适当地选择和使用供体膜36,LIFT台20可打印两个金属组件(其一为牺牲的)和在蚀刻台50的腐蚀加工中惰性的第三非导电材料。结果将是由金属(原材料)和介电构成的3D结构体。设计目标和支持结构体使得在通过LIFT台20打印的金属部件之间保持电接触。
作为另一选项,使用系统10制作由三种或更多种不同金属制成的3D结构体,其中两个不同的腐蚀加工在蚀刻台50上相继地进行。在各自的蚀刻步骤中,除去单种牺牲材料。例如,LIFT台20可制造由金属材料A和B(其中B的阳极性比A高)以及金属材料C和D(其中D的阳极性比C高)构成的结构体。金属对(A/B和C/D)各自在所选择的溶剂SB或SD中具有不同的腐蚀路径,该溶剂对于另一对是无效的(无作用的)。通过这种方式,蚀刻台50施加溶剂SB以除去材料B,并且然后变更为SD以除去材料D,从而保留由材料A和C构成的复杂结构体。
纯金属和混合物的LIFT喷出
图2为显示根据本发明一实施方式的具有不同组成的液滴44A和44B的LIFT打印的示意性细节视图。在成像化(pictured)实例中,液滴44A包括从供体膜36A喷出的纯金属56、例如铜,而液滴44B包括包括从另一供体膜36B喷出的金属56与另一金属58、例如铝或银的合金。膜36A和36B可方便地形成在相同供体基板34的不同区上,由此使得控制单元40能够以使得可将液滴44A和44B快速交替地在适当位置处喷出和引向受体基板22的方式移动供体板32并且扫描激光束42。替代地,膜36A和36B可形成在交替地嵌入到光学组装体24中的位置中的不同供体基板上。
图2说明用激光脉冲照射供体膜36A和36B的效果,所述激光脉冲的持续时间和对于热扩散通过所述膜所需的时间相当。在包括在供体基板34上重叠的金属层56和58的膜36B的情形中,将所述两种金属通过激光脉冲同时液化并且在液滴44B内混合以形成期望合金。金属56和58在所述合金中的相对浓度由膜36B中相应层的厚度决定。该工艺的细节描述于前述PCT国际公布WO 2015/056253中,并且它们在这里仅将简要地概述。替代地,膜36B可包括单个、均匀的供体膜中的适当浓度的期望金属的预混合的合金、例如金属56和58的合金。作为另外的替代方案,金属56和58之一或两者本身可为合金。
激光26将包括亚纳秒激光脉冲串的光束42引向供体板32。在一种实例实施方式中,激光26在532nm波长下发出持续时间400ps的脉冲,其中在其总厚度典型地在0.3μm-1.5μm范围内的供体膜36A和36B处大约0.75J/cm2的通量。典型地确定供体基板34的位置使得供体膜距受体基板22的距离为约0.1mm或可能更大。激光脉冲和膜参数的上述选择在供体膜中产生“火山(volcano)”图案60。该“火山-喷出”方案导致单一(单个)液滴44A/B响应于各自激光脉冲以高方向性、典型地在相对于膜表面的法向约5mrad内发出。液滴的尺寸可通过调节能量、脉冲持续时间和激光束42在供体膜36A/B上的焦点尺寸以及供体膜的厚度而控制。取决于这些参数设定,可典型地在10-100毫微微升(飞升,femtoliter)范围内调节液滴44A/B的体积。
液滴喷出的高方向性的重要结果是,可允许供体板32和受体基板22之间的相对大的间隙而不损害打印准确性。当激光辐射的脉冲撞击到供体膜上时,可容易地将在这些条件下的供体基板34定位成膜36A/B距离受体基板至少0.1mm,并且可典型地定位成距离受体基板至少0.2mm或甚至远至0.5mm。
液滴44A/B的LIFT-驱动的喷出只有当激光通量超过取决于供体膜厚度、激光脉冲持续时间和其它因素的给定阈值时才进行。对于短的激光脉冲(0.1–1ns的持续时间,如上所述),单一液滴的“火山-喷射”喷出将在从所述LIFT阈值扩展到高至上限的激光通量值范围内发生,该上限典型地比所述阈值通量高出大约50%。高于该通量上限,各激光脉冲将趋于诱导很多具有纳米级液滴维度的小液滴从供体膜喷出。此后一高通量方案对于其它意图可能是有用的,但是本文描述的精确3D打印应用类别中不太有效。
液滴44A和44B穿过供体膜36A/B和基板22之间的间隙,并且然后分别作为金属粒子62和64在基板表面上快速凝固。在该实例中,粒子62包括纯金属56,而粒子64包括金属56和58的完全混合的合金。其它类别的混合物、例如三种或更多种金属的合金以及金属和非金属材料的混合物可以类似的方式制造。粒子62和64的直径取决于产生它们的液滴的尺寸以及粒子穿过的间隙的尺寸。典型地,在火山-喷出方案中,粒子62和64具有小于5μm的直径,并且通过适当地设定上述LIFT参数可将该直径减小到小于2μm。在沉积图2中所示的粒子62和64的初始层之后,LIFT台20在受体基板22的相同区域上扫描多次以根据期望的设计和维度构建目标结构体46和支持结构体48。
在图2所示的打印配置中,期望的是,牺牲材料的LIFT打印参数和用于原材料打印的条件尽可能地接近或甚至相同。在本上下文中相关的打印参数包括脉冲能量、激光点在供体板32上的尺寸、激光脉冲形状(时间的和空间的)和用于打印的波长。这样的对照射供体膜36A和供体膜36B两者的相同或近乎相同的参数的使用在允许光学组装体24在液滴44A和44B的喷出之间来回地快速变换以在基板22上高效地打印复杂图案上是尤其有利的。膜36B的层结构在该方面上是有益的,因为激光束的能量在材料56中几乎完全被吸收,并且因此可预期膜36B在液滴喷出方面以和膜36A几乎相同的方式运转(behave)。替代地,可足够快地改变激光束42的一些参数以实现这些参数的变换而不妨碍打印性能。
供体膜36A和36B的成像化配置的另一优势在于,液滴44A和44B以及所得的粒子62和64将在热性质上十分类似。例如,供体膜的导热性影响最佳激光脉冲宽度的选择,而熔融温度和熔化热影响脉冲能量的选择。液滴44A和44B的体积将取决于供体膜36A和36B的厚度和光束42的空间宽度,这两者取决于最佳液滴喷出的热参数。因此,图2中示出的供体层的配置不仅使得可对于两个供体膜使用类似的LIFT激光参数,而且产生类似尺寸和性质的液滴44A和44B,和由此的类似尺寸和性质的粒子62和64。上述粒子尺寸以及热和机械性质的一致性使得能够将支持结构体48和目标结构体46精确且可靠地在彼此之上打印。
实例结构体
现在参考图3A和3B,其是根据本发明一实施方式的目标结构体46在不同制造阶段时的示意性的图示说明。这些图基于具有所示维度的真实LIFT-打印的结构体的扫描电子显微镜(SEM)图像。图3A显示通过LIFT台20制造的目标结构体46以及牺牲支持结构体48,而图3B显示在将牺牲支持体在蚀刻台50中进行电蚀刻之后具有内部空腔54的目标结构体46。
在该实例中,目标结构体46以及周围的基底(base)包含Cu/Ag(~98.5%/1.5%)合金,而支持结构体48包含纯铜。目标结构体46具有拥有内半径60μm的半圆顶(half dome)的形态,其最初在半球形支持结构体48上打印(图3A)。将该整个结构体在电解质溶剂52、例如氯化铁溶液中浸没八分钟以溶解支持结构体并且产生半球形空腔54,如图3B中所示。
当电腐蚀过程开始时,支持结构体48通常开始从其固相降解为离子溶解形式。该降解在牺牲材料和原材料之间的界面处发生,其中在所述材料之间存在电接触。在一段时间之后,支持结构体的一大部分可完全分离,于是其从目标结构体的周围壁脱离,并且电蚀刻过程停止。为此,通常必须在目标结构体中保留至少一个小的出孔以容许溶液的流入和流出,使得蚀刻可进行。
图4A-4C是经打印的3D结构体70的示意性截面视图,其说明根据本发明一实施方式的目标结构体72的制作技术中的相继阶段。如图4A所示,在LIFT台20中,在牺牲材料74上打印目标结构体72中的原金属材料使得所得目标结构体具有容纳牺牲材料的空腔。然后,为了通过电腐蚀除去牺牲材料74,将结构体70嵌入到蚀刻台50中,在目标结构体72内保持空腔78开口,如图4C中所示。
然而,在深空腔的情形中,由于在残余的牺牲材料和空腔外侧的原材料之间缺少足够的导电性,在所有的牺牲材料已经溶解之前电过程可能停止。
用于解决该问题的方式是在LIFT台20中打印另外的蚀刻-辅助结构体76使其嵌入到空腔中的牺牲材料74内,如图4A中所示。蚀刻-辅助结构体76可打印自与目标结构体72相同的原材料或可打印自另一种比牺牲材料74的阳极性低的适宜的金属材料。如图4B中说明的,蚀刻-辅助结构体76促进牺牲材料74的电腐蚀,因为一旦它们暴露于溶剂,它们提供和牺牲材料的另外的电接触区域。当空腔78中的所有牺牲材料74已经从空腔蚀刻出来时,蚀刻-辅助结构体76也被除去,如图4C中所示。例如,当周围的牺牲材料已经溶解时蚀刻-辅助结构体76可以变松(come loose)并从空腔78洗去的方式打印,或者可以化学方式将蚀刻-辅助结构体蚀刻出来。
图5A和5B为经打印的3D结构体86的示意性截面视图,其说明根据本发明一实施方式的多孔目标结构体的制作技术的相继阶段。如图5A所示,LIFT台20最初通过打印散布有阳极牺牲材料粒子84的阴极原材料粒子82产生结构体86。然后,蚀刻台50通过电腐蚀将粒子84蚀刻掉,使得在除去由粒子84提供的“支持结构体”之后残留的目标结构体是多孔的,如图5B所示。
图5A/B中说明的工艺可应用于例如制造具有独特的机械性质的铝泡沫体中。为此,粒子84(和用于形成它们的液滴)可包含纯铝,而粒子82包含具有少量的用于使其阴极性较高的另一种金属的铝合金(例如Al98%/Cu2%)。然后,蚀刻台50选择性地除去铝,从而留下Al/Cu泡沫体。该技术可用于制造软的但是仍然高稳定的材料(小的杨氏模量),因为它们包含金属而不是有机化合物。
用该方式可制造非常细的孔,其具有大致液滴维度(小于5μm)水平的维度。此外,可简单地通过调节粒子82和84的相对打印密度而调节孔隙率。
具有分级孔隙率–即在目标结构体的区域上变化的孔隙率–的结构体可通过改变粒子84在所述目标结构体的区域上的相对密度而制造。因此,可制造分级的软度和硬度的3D结构体以及具有非各向同性的机械性质,例如沿着不同方向的不同伸长性质的结构体。该技术可尤其用于制造用于生物医药应用的多孔钛。
将认识到,上述实施方式以举例的方式引用,且本发明不限于上文具体展示及描述的内容。而是,本发明的范围包括上文所述的各种特征的组合和子组合两者,以及本领域技术人员在阅读前述描述之后将想到且未在现有技术中公开的变化及修改。
Claims (28)
1.3D打印方法,其包括:
在基板上打印第一金属材料作为支持结构体;
在所述基板上以与所述支持结构体接触的方式打印比所述第一金属材料阳极性低的第二金属材料作为目标结构体;和
通过应用原电池效应以选择性地腐蚀所述第一金属材料而将所述支持结构体从所述目标结构体以化学方式除去。
2.根据权利要求1的方法,其中第一材料和第二材料中的一种包括纯金属,且第一材料和第二材料中的另一种包括该纯金属的合金。
3.根据权利要求2的方法,其中所述纯金属构成所述合金的至少90%。
4.根据权利要求2的方法,其中所述第一材料为纯金属,且所述第二材料为合金。
5.根据权利要求2的方法,其中所述第二材料为纯金属,且所述第一材料为合金。
6.根据权利要求2的方法,其中所述第一材料和第二材料为纯金属的不同合金。
7.根据权利要求1-6任一项的方法,其中打印第一金属材料和第二金属材料包括将激光辐射的脉冲分别引导到第一和第二薄膜上以诱导第一材料和第二材料的熔滴激光诱导向前转移(LIFT)到所述基板上。
8.根据权利要求7的方法,其中第一金属材料和第二金属材料的至少一种包括至少两种组分材料的混合物,且其中引导所述激光辐射的脉冲包括:
提供其上重叠包括所述组分材料各自的相应层的多个薄膜层的透明供体基板;和
用所述激光辐射的脉冲照射所述供体基板以诱导其中所述组分材料混合在一起的熔滴的喷出。
9.根据权利要求1-6任一项的方法,且其包括在第一金属材料和第二金属材料的至少一个上打印第三材料,由此所述目标结构体在除去所述支持结构体之后包括所述第二金属材料和所述第三材料。
10.根据权利要求9的方法,其中所述第三材料包括介电材料。
11.根据权利要求1-6任一项的方法,其中将所述第二金属材料打印到所述第一金属材料上使得所述目标结构体具有容纳所述第一金属材料的空腔,且其中以化学方式除去所述支持结构体包括通过原电池效应将第一金属材料从所述空腔蚀刻出来。
12.根据权利要求10的方法,且其包括打印比所述第一金属材料阳极性低的阴极蚀刻-辅助结构体,使其嵌入到在所述空腔中的所述第一金属材料内以在蚀刻期间促进原电池效应,且其中所述方法包括在将所述第一金属材料蚀刻出来之后从所述空腔除去所述蚀刻-辅助结构体。
13.根据权利要求1-6任一项的方法,其中打印第一金属材料和第二金属材料包括打印第一金属材料和第二金属材料的散布粒子,且其中以化学方式除去所述支持结构体包括通过原电池效应将所述第二金属材料的粒子蚀刻掉,使得在除去所述支持结构体之后残留的目标结构体为多孔的。
14.根据权利要求13的方法,其中打印所述散布粒子包括改变在所述目标结构体的区域上的所述第一金属材料的粒子的相对密度,使得在除去所述支持结构体之后残留的第二金属材料具有在所述目标结构体的区域上变化的孔隙率。
15.制作设备,其包括:
打印台,其配置成在基板上打印第一金属材料作为支持结构体、和在所述基板上以与所述支持结构体接触的方式打印比所述第一金属材料阳极性低的第二金属材料作为目标结构体;和
蚀刻台,其配置成通过应用原电池效应以选择性地腐蚀所述第一金属材料而以化学方式从所述目标结构体除去所述支持结构体。
16.根据权利要求16的设备,其中第一材料和第二材料中的一种包括纯金属,且第一材料和第二材料中的另一种包括该纯金属的合金。
17.根据权利要求16的设备,其中所述纯金属构成所述合金的至少90%。
18.根据权利要求16的设备,其中所述第一材料为纯金属,且所述第二材料为合金。
19.根据权利要求16的设备,其中所述第二材料为纯金属,且所述第一材料为合金。
20.根据权利要求16的设备,其中所述第一材料和第二材料为纯金属的不同合金。
21.根据权利要求15-20任一项的设备,其中所述打印台配置成通过将激光辐射的脉冲分别引导到第一薄膜和第二薄膜上以诱导第一材料和第二材料的熔滴激光诱导向前转移(LIFT)到所述基板上来打印第一金属材料和第二金属材料。
22.根据权利要求21的设备,其中第一金属材料和第二金属材料的至少一种包括至少两种组分材料的混合物,且其中所述打印台包括其上重叠包括所述组分材料各自的相应层的多个薄膜层的透明供体基板,并且配置成用所述激光辐射的脉冲照射所述供体基板以诱导其中所述组分材料混合在一起的熔滴的喷出。
23.根据权利要求15-20任一项的设备,其中所述打印台配置成在第一金属材料和第二金属材料的至少一种上打印第三材料,由此所述目标结构体在除去所述支持结构体之后包括所述第二金属材料和所述第三材料。
24.根据权利要求23的设备,其中所述第三材料包括介电材料。
25.根据权利要求15-20任一项的设备,其中所述打印台配置成在第一金属材料上打印第二金属材料,使得所述目标结构体具有容纳所述第一金属材料的空腔,且其中所述蚀刻台配置成通过原电池效应将第一金属材料从所述空腔蚀刻出来。
26.根据权利要求25的设备,其中所述打印台配置成打印比第一金属材料阳极性低的蚀刻-辅助结构体,使其嵌入到所述空腔中的第一金属材料内以在蚀刻期间促进原电池效应,其中在将第一金属材料蚀刻出来之后将所述蚀刻-辅助结构体从所述空腔除去。
27.根据权利要求15-20任一项的设备,其中所述打印台配置成打印第一金属材料和第二金属材料的散布粒子,且其中所述蚀刻台配置成通过原电池效应将所述第二金属材料的粒子蚀刻掉,使得在除去所述支持结构体之后残留的目标结构体是多孔的。
28.根据权利要求27的设备,其中所述打印台配置成改变所述目标结构体的区域上的第一金属材料的粒子的相对密度,使得在除去所述支持结构体之后残留的第二金属材料具有在所述目标结构体的区域上变化的孔隙率。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110666169A (zh) * | 2019-09-25 | 2020-01-10 | 南京农业大学 | 一种多材料激光诱导向前转移3d打印装置及方法 |
CN114851564A (zh) * | 2021-02-05 | 2022-08-05 | 苏州铼赛智能科技有限公司 | 剥离板、制备方法、及所适用的容器、3d打印设备 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102279622B1 (ko) * | 2013-10-14 | 2021-07-20 | 오르보테크 엘티디. | 다중 복합 재료 구조 lift 인쇄 |
EP3207772B1 (en) | 2014-10-19 | 2024-04-17 | Orbotech Ltd. | Lift printing of conductive traces onto a semiconductor substrate |
KR20180030609A (ko) * | 2015-07-09 | 2018-03-23 | 오르보테크 엘티디. | Lift 토출 각도의 제어 |
US10688692B2 (en) | 2015-11-22 | 2020-06-23 | Orbotech Ltd. | Control of surface properties of printed three-dimensional structures |
KR20180035127A (ko) * | 2016-09-28 | 2018-04-05 | 오르보테크 엘티디. | 고-점도 프린팅 방법 및 장치 |
CA3043791A1 (en) * | 2016-11-23 | 2018-05-31 | Institut National De La Recherche Scientifique | Method and system of laser-driven impact acceleration |
US10330404B2 (en) * | 2016-12-16 | 2019-06-25 | Hamilton Sundstrand Corporation | Heat exchanger component with embedded sensor |
US11351627B2 (en) | 2017-01-31 | 2022-06-07 | Eshfartech Ltd. | Three-dimensional laminated metallic objects, method and system of making same |
TW201901887A (zh) | 2017-05-24 | 2019-01-01 | 以色列商奧寶科技股份有限公司 | 於未事先圖樣化基板上電器互連電路元件 |
EP3710275B1 (en) | 2017-11-15 | 2021-03-31 | Granat Research Ltd. | Metal droplet jetting system |
KR102129322B1 (ko) * | 2018-05-09 | 2020-07-03 | 중앙대학교 산학협력단 | 레이저를 이용한 3차원 금속 프린팅 장치 및 방법 |
US11826953B2 (en) | 2018-09-12 | 2023-11-28 | Divergent Technologies, Inc. | Surrogate supports in additive manufacturing |
JP7283933B2 (ja) * | 2019-03-26 | 2023-05-30 | 株式会社松風 | 歯科用三次元造形物の作製に用いる歯科用光造形式三次元印刷材料 |
US11440241B2 (en) * | 2019-06-14 | 2022-09-13 | Io Tech Group Ltd. | Additive manufacturing of a free form object made of multicomponent materials |
CN111390169A (zh) * | 2020-03-26 | 2020-07-10 | 南京尚吉增材制造研究院有限公司 | 金属立体成型异质支撑与化学铣切复合制备悬垂结构的方法 |
US11400714B2 (en) | 2020-12-22 | 2022-08-02 | Xerox Corporation | Method for magnetohydrodynamic (MHD) printhead/nozzle reuse |
US11999107B2 (en) * | 2020-12-23 | 2024-06-04 | Cornell University | Controlled molten metal deposition |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070203584A1 (en) * | 2006-02-14 | 2007-08-30 | Amit Bandyopadhyay | Bone replacement materials |
US20080041725A1 (en) * | 2006-08-21 | 2008-02-21 | Micron Technology, Inc. | Method of selectively removing conductive material |
US20100021638A1 (en) * | 2008-07-28 | 2010-01-28 | Solidscape, Inc. | Method for fabricating three dimensional models |
US8216931B2 (en) * | 2005-03-31 | 2012-07-10 | Gang Zhang | Methods for forming multi-layer three-dimensional structures |
US8262916B1 (en) * | 2009-06-30 | 2012-09-11 | Microfabrica Inc. | Enhanced methods for at least partial in situ release of sacrificial material from cavities or channels and/or sealing of etching holes during fabrication of multi-layer microscale or millimeter-scale complex three-dimensional structures |
US20140160452A1 (en) * | 2011-08-16 | 2014-06-12 | Asml Netherlands B.V | Lithographic apparatus, programmable patterning device and lithographic method |
Family Cites Families (145)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3963852A (en) | 1973-08-04 | 1976-06-15 | Moore Business Forms, Inc. | Clay-coated record material of improved image durability |
AU8657882A (en) * | 1981-10-09 | 1983-04-28 | Imperial Clevite Inc. | High strength powder metal material |
JPS61260603A (ja) | 1985-05-14 | 1986-11-18 | 三菱電機株式会社 | 電子部品 |
US4752455A (en) | 1986-05-27 | 1988-06-21 | Kms Fusion, Inc. | Pulsed laser microfabrication |
US4891183A (en) | 1986-12-03 | 1990-01-02 | Chrysler Motors Corporation | Method of preparing alloy compositions |
US4970196A (en) | 1987-01-15 | 1990-11-13 | The Johns Hopkins University | Method and apparatus for the thin film deposition of materials with a high power pulsed laser |
US4931323A (en) | 1987-12-10 | 1990-06-05 | Texas Instruments Incorporated | Thick film copper conductor patterning by laser |
US4895735A (en) | 1988-03-01 | 1990-01-23 | Texas Instruments Incorporated | Radiation induced pattern deposition |
US4977038A (en) * | 1989-04-14 | 1990-12-11 | Karl Sieradzki | Micro- and nano-porous metallic structures |
US4987006A (en) | 1990-03-26 | 1991-01-22 | Amp Incorporated | Laser transfer deposition |
US5173441A (en) | 1991-02-08 | 1992-12-22 | Micron Technology, Inc. | Laser ablation deposition process for semiconductor manufacture |
JPH04269801A (ja) | 1991-02-25 | 1992-09-25 | Juichiro Ozawa | 抵抗膜作成用材料 |
US5292559A (en) | 1992-01-10 | 1994-03-08 | Amp Incorporated | Laser transfer process |
JPH0634283A (ja) | 1992-06-16 | 1994-02-08 | Ishikawajima Harima Heavy Ind Co Ltd | 宇宙用熱交換器の製作方法 |
DE4232373A1 (de) | 1992-09-03 | 1994-03-10 | Deutsche Forsch Luft Raumfahrt | Verfahren zum Auftragen strukturierter Schichten |
DE4229399C2 (de) | 1992-09-03 | 1999-05-27 | Deutsch Zentr Luft & Raumfahrt | Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements |
US5308737A (en) | 1993-03-18 | 1994-05-03 | Minnesota Mining And Manufacturing Company | Laser propulsion transfer using black metal coated substrates |
US5683601A (en) | 1994-10-24 | 1997-11-04 | Panasonic Technologies, Inc. | Laser ablation forward metal deposition with electrostatic assisted bonding |
EP1239535B1 (en) | 1994-11-04 | 2004-12-15 | Andrew Corporation | Cellular base station telecommunication system with an antenna control arrangement and antenna control arrangement |
US5935758A (en) | 1995-04-20 | 1999-08-10 | Imation Corp. | Laser induced film transfer system |
WO1998041189A1 (en) | 1997-03-20 | 1998-09-24 | Therics, Inc. | Fabrication of tissue products using a mold formed by solid free-form methods |
US6025110A (en) | 1997-09-18 | 2000-02-15 | Nowak; Michael T. | Method and apparatus for generating three-dimensional objects using ablation transfer |
US6159832A (en) | 1998-03-18 | 2000-12-12 | Mayer; Frederick J. | Precision laser metallization |
JP3871096B2 (ja) | 1998-05-21 | 2007-01-24 | 株式会社ティラド | 蒸発器、吸収器および過冷却器の組合せ一体型熱交換器と、その製造方法 |
US6155330A (en) | 1998-11-04 | 2000-12-05 | Visteon Global Technologies, Inc. | Method of spray forming metal deposits using a metallic spray forming pattern |
US6815015B2 (en) | 1999-01-27 | 2004-11-09 | The United States Of America As Represented By The Secretary Of The Navy | Jetting behavior in the laser forward transfer of rheological systems |
US6805918B2 (en) | 1999-01-27 | 2004-10-19 | The United States Of America As Represented By The Secretary Of The Navy | Laser forward transfer of rheological systems |
US6177151B1 (en) | 1999-01-27 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Matrix assisted pulsed laser evaporation direct write |
US6348295B1 (en) | 1999-03-26 | 2002-02-19 | Massachusetts Institute Of Technology | Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging |
US6792326B1 (en) | 1999-05-24 | 2004-09-14 | Potomac Photonics, Inc. | Material delivery system for miniature structure fabrication |
WO2000072222A1 (en) | 1999-05-24 | 2000-11-30 | Potomac Photonics, Inc. | Apparatus for fabrication of miniature structures |
US6440503B1 (en) | 2000-02-25 | 2002-08-27 | Scimed Life Systems, Inc. | Laser deposition of elements onto medical devices |
US6649861B2 (en) | 2000-05-24 | 2003-11-18 | Potomac Photonics, Inc. | Method and apparatus for fabrication of miniature structures |
DE50014868D1 (de) | 2000-09-25 | 2008-01-31 | Voxeljet Technology Gmbh | Verfahren zum herstellen eines bauteils in ablagerungstechnik |
DE10062683A1 (de) | 2000-12-15 | 2002-06-20 | Heidelberger Druckmasch Ag | Mehrstrahl-Abtastvorrichtung |
US6412143B1 (en) | 2001-01-08 | 2002-07-02 | Cheng-Lu Chen | Structure of material for forming a stop at an end of lashing string |
US7087200B2 (en) | 2001-06-22 | 2006-08-08 | The Regents Of The University Of Michigan | Controlled local/global and micro/macro-porous 3D plastic, polymer and ceramic/cement composite scaffold fabrication and applications thereof |
GB2379083A (en) | 2001-08-20 | 2003-02-26 | Seiko Epson Corp | Inkjet printing on a substrate using two immiscible liquids |
EP1427266A4 (en) | 2001-09-11 | 2006-10-04 | Daiken Chemical Co Ltd | PROCESS FOR IMAGING ON AN OBJECT SURFACE WITH A SWITCHING SUBSTRATE |
SG122749A1 (en) | 2001-10-16 | 2006-06-29 | Inst Data Storage | Method of laser marking and apparatus therefor |
GR1004059B (el) | 2001-12-31 | 2002-11-15 | Ιωαννα Ζεργιωτη | Κατασκευη βιοπολυμερικων σχηματων μεσω εναποθεσης με λειζερ. |
US7188492B2 (en) | 2002-01-18 | 2007-03-13 | Linde Aktiengesellschaft | Plate heat exchanger |
DE10210146A1 (de) | 2002-03-07 | 2003-09-25 | Aurentum Innovationstechnologi | Qualitätsdruckverfahren und Druckmaschine sowie Drucksbustanz hierfür |
US7316748B2 (en) | 2002-04-24 | 2008-01-08 | Wisconsin Alumni Research Foundation | Apparatus and method of dispensing small-scale powders |
DE10237732B4 (de) | 2002-08-17 | 2004-08-26 | BLZ Bayerisches Laserzentrum Gemeinnützige Forschungsgesellschaft mbH | Laserstrahlmarkierungsverfahren sowie Markierungsvorrichtung zur Laserstrahlmarkierung eines Zielsubstrats |
US6921626B2 (en) | 2003-03-27 | 2005-07-26 | Kodak Polychrome Graphics Llc | Nanopastes as patterning compositions for electronic parts |
US6873398B2 (en) | 2003-05-21 | 2005-03-29 | Esko-Graphics A/S | Method and apparatus for multi-track imaging using single-mode beams and diffraction-limited optics |
US6899988B2 (en) | 2003-06-13 | 2005-05-31 | Kodak Polychrome Graphics Llc | Laser thermal metallic donors |
US7277770B2 (en) | 2003-07-15 | 2007-10-02 | Huang Wen C | Direct write process and apparatus |
US7682970B2 (en) | 2003-07-16 | 2010-03-23 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
WO2005024908A2 (en) | 2003-09-05 | 2005-03-17 | Si2 Technologies, Inc. | Laser transfer articles and method of making |
US7521651B2 (en) | 2003-09-12 | 2009-04-21 | Orbotech Ltd | Multiple beam micro-machining system and method |
US20050095367A1 (en) | 2003-10-31 | 2005-05-05 | Babiarz Alec J. | Method of noncontact dispensing of viscous material |
US7540996B2 (en) | 2003-11-21 | 2009-06-02 | The Boeing Company | Laser sintered titanium alloy and direct metal fabrication method of making the same |
US7294449B1 (en) | 2003-12-31 | 2007-11-13 | Kovio, Inc. | Radiation patternable functional materials, methods of their use, and structures formed therefrom |
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
US7557367B2 (en) | 2004-06-04 | 2009-07-07 | The Board Of Trustees Of The University Of Illinois | Stretchable semiconductor elements and stretchable electrical circuits |
US8217381B2 (en) | 2004-06-04 | 2012-07-10 | The Board Of Trustees Of The University Of Illinois | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
US7236334B2 (en) | 2004-08-31 | 2007-06-26 | Hitachi Global Storage Technologies Netherlands B.V. | Repeatable ESD protection utilizing a process for unshorting a first shorting material between electrical pads and reshorting by recreating the short |
WO2006033822A2 (en) | 2004-09-07 | 2006-03-30 | Massachusetts Institute Of Technology | Fabrication of electronic and photonic systems on flexible substrates by layer transfer method |
US7358169B2 (en) | 2005-04-13 | 2008-04-15 | Hewlett-Packard Development Company, L.P. | Laser-assisted deposition |
US7784173B2 (en) | 2005-12-27 | 2010-08-31 | Palo Alto Research Center Incorporated | Producing layered structures using printing |
US20070224235A1 (en) | 2006-03-24 | 2007-09-27 | Barron Tenney | Medical devices having nanoporous coatings for controlled therapeutic agent delivery |
US7608308B2 (en) | 2006-04-17 | 2009-10-27 | Imra America, Inc. | P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates |
TWI431380B (zh) | 2006-05-12 | 2014-03-21 | Photon Dynamics Inc | 沉積修復設備及方法 |
TWI348338B (en) | 2006-05-24 | 2011-09-01 | Unimicron Technology Corp | Method for repairing the circuitry of circuit board |
US20080006966A1 (en) | 2006-07-07 | 2008-01-10 | Stratasys, Inc. | Method for building three-dimensional objects containing metal parts |
US7569832B2 (en) | 2006-07-14 | 2009-08-04 | Carestream Health, Inc. | Dual-screen digital radiographic imaging detector array |
WO2008014519A2 (en) | 2006-07-28 | 2008-01-31 | Microcontinuum, Inc. | Addressable flexible patterns |
US20080099515A1 (en) | 2006-10-11 | 2008-05-01 | Nordson Corporation | Thin line conformal coating apparatus and method |
US8420978B2 (en) | 2007-01-18 | 2013-04-16 | The Board Of Trustees Of The University Of Illinois | High throughput, low cost dual-mode patterning method for large area substrates |
US20080233291A1 (en) | 2007-03-23 | 2008-09-25 | Chandrasekaran Casey K | Method for depositing an inorganic layer to a thermal transfer layer |
US10231344B2 (en) | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
WO2008157666A1 (en) | 2007-06-19 | 2008-12-24 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Sub-micron laser direct write |
WO2009018340A2 (en) | 2007-07-31 | 2009-02-05 | Boston Scientific Scimed, Inc. | Medical device coating by laser cladding |
US20090061112A1 (en) | 2007-08-27 | 2009-03-05 | Mu-Gahat Enterprises, Llc | Laser circuit etching by subtractive deposition |
US8728589B2 (en) | 2007-09-14 | 2014-05-20 | Photon Dynamics, Inc. | Laser decal transfer of electronic materials |
US7534544B2 (en) | 2007-10-19 | 2009-05-19 | E.I. Du Pont De Nemours And Company | Method of separating an exposed thermal transfer assemblage |
GB2453774B (en) | 2007-10-19 | 2013-02-20 | Materials Solutions | A method of making an article |
US20090130427A1 (en) | 2007-10-22 | 2009-05-21 | The Regents Of The University Of California | Nanomaterial facilitated laser transfer |
US7938855B2 (en) | 2007-11-02 | 2011-05-10 | Boston Scientific Scimed, Inc. | Deformable underlayer for stent |
DE102007055019B4 (de) * | 2007-11-14 | 2019-04-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer nanoporösen Schicht |
TWI375498B (en) | 2007-11-21 | 2012-10-21 | Ind Tech Res Inst | High perfromance laser-assisted transferring system and transfer component |
TW200945339A (en) | 2007-12-19 | 2009-11-01 | Koninkl Philips Electronics Nv | Optical disk format for direct writing materials on a substrate |
CN101909804B (zh) | 2008-01-10 | 2014-10-22 | 以色列商奥宝科技股份有限公司 | 于一基板中具有变化同时性的激光钻孔方法 |
US8056222B2 (en) | 2008-02-20 | 2011-11-15 | The United States Of America, As Represented By The Secretary Of The Navy | Laser-based technique for the transfer and embedding of electronic components and devices |
US8215371B2 (en) | 2008-04-18 | 2012-07-10 | Stratasys, Inc. | Digital manufacturing with amorphous metallic alloys |
CN102067726B (zh) | 2008-06-16 | 2014-06-04 | 东丽株式会社 | 图案形成方法及使用其的装置的制造方法以及装置 |
WO2009153792A2 (en) | 2008-06-19 | 2009-12-23 | Utilight Ltd. | Light induced patterning |
US7942987B2 (en) | 2008-06-24 | 2011-05-17 | Stratasys, Inc. | System and method for building three-dimensional objects with metal-based alloys |
JP2011529126A (ja) | 2008-07-24 | 2011-12-01 | コヴィオ インコーポレイテッド | アルミニウムインク及びその製造方法、アルミニウムインクを堆積する方法、並びにアルミニウムインクの印刷及び/又は堆積により形成されたフィルム |
CN102203674B (zh) | 2008-09-22 | 2015-08-12 | Asml荷兰有限公司 | 光刻设备、可编程图案形成装置和光刻方法 |
JP2010098526A (ja) | 2008-10-16 | 2010-04-30 | Sony Corp | 受信装置、コンテンツ受信方法、およびプログラム |
IL197349A0 (en) | 2009-03-02 | 2009-12-24 | Orbotech Ltd | A method and system for electrical circuit repair |
US20120025182A1 (en) | 2009-04-03 | 2012-02-02 | Sharp Kabushiki Kaisha | Donor substrate, process for production of transfer film, and process for production of organic electroluminescent element |
DE102009020774B4 (de) | 2009-05-05 | 2011-01-05 | Universität Stuttgart | Verfahren zum Kontaktieren eines Halbleitersubstrates |
US8129088B2 (en) | 2009-07-02 | 2012-03-06 | E.I. Du Pont De Nemours And Company | Electrode and method for manufacturing the same |
US20110136162A1 (en) | 2009-08-31 | 2011-06-09 | Drexel University | Compositions and Methods for Functionalized Patterning of Tissue Engineering Substrates Including Bioprinting Cell-Laden Constructs for Multicompartment Tissue Chambers |
US8743165B2 (en) | 2010-03-05 | 2014-06-03 | Micronic Laser Systems Ab | Methods and device for laser processing |
WO2011126438A1 (en) | 2010-04-09 | 2011-10-13 | Frank Niklaus | Free form printing of silicon micro- and nanostructures |
GB201009847D0 (en) | 2010-06-11 | 2010-07-21 | Dzp Technologies Ltd | Deposition method, apparatus, printed object and uses |
KR101114256B1 (ko) | 2010-07-14 | 2012-03-05 | 한국과학기술원 | 패턴 제조 방법 |
GB201019579D0 (en) | 2010-11-19 | 2010-12-29 | Lingvitae Holding As | Method and apparatus for direct writing |
JP2012190877A (ja) | 2011-03-09 | 2012-10-04 | Fujifilm Corp | ナノインプリント方法およびそれに用いられるナノインプリント装置 |
TW201238738A (en) | 2011-03-25 | 2012-10-01 | Hon Hai Prec Ind Co Ltd | Products shell manufacturing method and structure |
US20120247740A1 (en) | 2011-03-31 | 2012-10-04 | Denso International America, Inc. | Nested heat exchangers |
US8815345B2 (en) | 2011-05-26 | 2014-08-26 | Solidscape, Inc. | Method for fabricating three dimensional models |
KR101982887B1 (ko) | 2011-07-13 | 2019-05-27 | 누보트로닉스, 인크. | 전자 및 기계 구조체들을 제조하는 방법들 |
US9034674B2 (en) | 2011-08-08 | 2015-05-19 | Quarkstar Llc | Method and apparatus for coupling light-emitting elements with light-converting material |
EA024991B1 (ru) | 2011-09-12 | 2016-11-30 | ФАРМА ДжРС, Д.О.О. | Полиморфная форма питавастатина кальция |
RU2539135C2 (ru) | 2012-02-27 | 2015-01-10 | Юрий Александрович Чивель | Способ получения объемных изделий из порошков и устройство для его осуществления |
NL2010176A (en) | 2012-02-23 | 2013-08-26 | Asml Netherlands Bv | Device, lithographic apparatus, method for guiding radiation and device manufacturing method. |
DE102012003866B4 (de) | 2012-02-23 | 2013-07-25 | Universität Stuttgart | Verfahren zum Kontaktieren eines Halbleitersubstrates, insbesondere zum Kontaktieren von Solarzellen, sowie Solarzellen |
EP2660352A1 (en) | 2012-05-02 | 2013-11-06 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Donor sheet and method for light induced forward transfer manufacturing |
GB2501918B (en) | 2012-05-11 | 2014-06-18 | Rolls Royce Plc | Casing |
US9044805B2 (en) | 2012-05-16 | 2015-06-02 | Apple Inc. | Layer-by-layer construction with bulk metallic glasses |
US9943996B2 (en) | 2012-05-22 | 2018-04-17 | University Of Southern California | Process planning of meniscus shapes for fabricating smooth surfaces in mask image projection based additive manufacturing |
WO2013182562A1 (en) | 2012-06-04 | 2013-12-12 | Micronic Mydata AB | Optical writer for flexible foils |
US11376349B2 (en) | 2012-10-05 | 2022-07-05 | University of Pittsburgh—of the Commonwealth System of Higher Education | Biodegradable iron-containing compositions, methods of preparing and applications therefor |
WO2014061024A1 (en) | 2012-10-21 | 2014-04-24 | Photon Jet Ltd | A multi-technology printing system |
ES2471568B1 (es) | 2012-11-22 | 2015-08-21 | Abengoa Solar New Technologies S.A. | Procedimiento para la creación de contactos eléctricos y contactos así creados |
DK2956823T4 (da) | 2013-02-12 | 2019-09-23 | Carbon3D Inc | Kontinuerlig trykning med væskemellemlag |
TWI636717B (zh) | 2013-02-18 | 2018-09-21 | 奧寶科技有限公司 | 兩步驟直接寫入之雷射金屬化 |
US9249015B2 (en) | 2013-02-27 | 2016-02-02 | International Business Machines Corporation | Mold for forming complex 3D MEMS components |
US9192999B2 (en) * | 2013-07-01 | 2015-11-24 | General Electric Company | Methods and systems for electrochemical machining of an additively manufactured component |
US20150024317A1 (en) | 2013-07-17 | 2015-01-22 | Stratasys, Inc. | High-Performance Consumable Materials for Electrophotography-Based Additive Manufacturing |
US9023566B2 (en) | 2013-07-17 | 2015-05-05 | Stratasys, Inc. | ABS part material for electrophotography-based additive manufacturing |
US9029058B2 (en) | 2013-07-17 | 2015-05-12 | Stratasys, Inc. | Soluble support material for electrophotography-based additive manufacturing |
KR102279622B1 (ko) | 2013-10-14 | 2021-07-20 | 오르보테크 엘티디. | 다중 복합 재료 구조 lift 인쇄 |
JP6665386B2 (ja) | 2013-12-15 | 2020-03-13 | オーボテック リミテッド | プリント回路配線の修復 |
US20150197063A1 (en) | 2014-01-12 | 2015-07-16 | Zohar SHINAR | Device, method, and system of three-dimensional printing |
WO2015106193A1 (en) | 2014-01-13 | 2015-07-16 | Kevin Engel | Additive metal deposition process |
US9840789B2 (en) * | 2014-01-20 | 2017-12-12 | City University Of Hong Kong | Etching in the presence of alternating voltage profile and resulting porous structure |
KR102345450B1 (ko) | 2014-04-10 | 2021-12-29 | 오르보테크 엘티디. | 펄스-모드 직접-기록 레이저 금속화 |
KR20170008768A (ko) | 2014-05-27 | 2017-01-24 | 오르보테크 엘티디. | 레이저 유도 순방향 전송에 의한 3d 구조의 인쇄 |
WO2016020817A1 (en) | 2014-08-07 | 2016-02-11 | Orbotech Ltd. | Lift printing system |
EP3207772B1 (en) | 2014-10-19 | 2024-04-17 | Orbotech Ltd. | Lift printing of conductive traces onto a semiconductor substrate |
KR20170102984A (ko) | 2015-01-21 | 2017-09-12 | 오르보테크 엘티디. | 경사진 lift 제팅 |
US9887356B2 (en) | 2015-01-23 | 2018-02-06 | The Trustees Of Princeton University | 3D printed active electronic materials and devices |
US10857732B2 (en) | 2015-02-05 | 2020-12-08 | Mycronic AB | Recurring process for laser induced forward transfer and high throughput and recycling of donor material by the reuse of a plurality of target substrate plates or forward transfer of a pattern of discrete donor dots |
US9842831B2 (en) | 2015-05-14 | 2017-12-12 | Mediatek Inc. | Semiconductor package and fabrication method thereof |
KR20180030609A (ko) | 2015-07-09 | 2018-03-23 | 오르보테크 엘티디. | Lift 토출 각도의 제어 |
US20170021014A1 (en) | 2015-07-21 | 2017-01-26 | The Johns Hopkins University | Vaccine adjuvants for cytomegalovirus prevention and treatment |
EP3166143A1 (fr) | 2015-11-05 | 2017-05-10 | Gemalto Sa | Procede de fabrication d'un dispositif a puce de circuit integre par depot direct de matiere conductrice |
US10688692B2 (en) | 2015-11-22 | 2020-06-23 | Orbotech Ltd. | Control of surface properties of printed three-dimensional structures |
-
2016
- 2016-01-14 KR KR1020177019726A patent/KR102282860B1/ko active IP Right Grant
- 2016-01-14 CN CN201680005719.1A patent/CN107208256B/zh not_active Expired - Fee Related
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- 2016-01-14 WO PCT/IL2016/050037 patent/WO2016116924A1/en active Application Filing
- 2016-01-14 EP EP16739878.3A patent/EP3247816A4/en not_active Withdrawn
-
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- 2017-06-22 IL IL253091A patent/IL253091B/en active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8216931B2 (en) * | 2005-03-31 | 2012-07-10 | Gang Zhang | Methods for forming multi-layer three-dimensional structures |
US20070203584A1 (en) * | 2006-02-14 | 2007-08-30 | Amit Bandyopadhyay | Bone replacement materials |
US20080041725A1 (en) * | 2006-08-21 | 2008-02-21 | Micron Technology, Inc. | Method of selectively removing conductive material |
US20100021638A1 (en) * | 2008-07-28 | 2010-01-28 | Solidscape, Inc. | Method for fabricating three dimensional models |
US8262916B1 (en) * | 2009-06-30 | 2012-09-11 | Microfabrica Inc. | Enhanced methods for at least partial in situ release of sacrificial material from cavities or channels and/or sealing of etching holes during fabrication of multi-layer microscale or millimeter-scale complex three-dimensional structures |
US20140160452A1 (en) * | 2011-08-16 | 2014-06-12 | Asml Netherlands B.V | Lithographic apparatus, programmable patterning device and lithographic method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110666169A (zh) * | 2019-09-25 | 2020-01-10 | 南京农业大学 | 一种多材料激光诱导向前转移3d打印装置及方法 |
CN110666169B (zh) * | 2019-09-25 | 2022-04-08 | 南京农业大学 | 一种多材料激光诱导向前转移3d打印装置及方法 |
CN114851564A (zh) * | 2021-02-05 | 2022-08-05 | 苏州铼赛智能科技有限公司 | 剥离板、制备方法、及所适用的容器、3d打印设备 |
CN114851564B (zh) * | 2021-02-05 | 2024-05-31 | 苏州铼赛智能科技有限公司 | 剥离板、制备方法、及所适用的容器、3d打印设备 |
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EP3247816A1 (en) | 2017-11-29 |
EP3247816A4 (en) | 2018-01-24 |
WO2016116924A1 (en) | 2016-07-28 |
IL253091A0 (en) | 2017-08-31 |
US10633758B2 (en) | 2020-04-28 |
CN107208256B (zh) | 2020-08-11 |
KR20170103826A (ko) | 2017-09-13 |
IL253091B (en) | 2021-01-31 |
KR102282860B1 (ko) | 2021-07-28 |
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