CN107201262A - A kind of cutting liquid for reducing diamond wire cutting broken string - Google Patents
A kind of cutting liquid for reducing diamond wire cutting broken string Download PDFInfo
- Publication number
- CN107201262A CN107201262A CN201611038751.8A CN201611038751A CN107201262A CN 107201262 A CN107201262 A CN 107201262A CN 201611038751 A CN201611038751 A CN 201611038751A CN 107201262 A CN107201262 A CN 107201262A
- Authority
- CN
- China
- Prior art keywords
- diamond wire
- cutting
- parts
- broken string
- cutting liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M169/00—Lubricating compositions characterised by containing as components a mixture of at least two types of ingredient selected from base-materials, thickeners or additives, covered by the preceding groups, each of these compounds being essential
- C10M169/04—Mixtures of base-materials and additives
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2211/00—Organic non-macromolecular compounds containing halogen as ingredients in lubricant compositions
- C10M2211/06—Perfluorinated compounds
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2213/00—Organic macromolecular compounds containing halogen as ingredients in lubricant compositions
- C10M2213/06—Perfluoro polymers
- C10M2213/0606—Perfluoro polymers used as base material
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
- C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2215/042—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups; Alkoxylated derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/04—Detergent property or dispersant property
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/08—Resistance to extreme temperature
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/24—Emulsion properties
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2040/00—Specified use or application for which the lubricating composition is intended
- C10N2040/20—Metal working
- C10N2040/22—Metal working with essential removal of material, e.g. cutting, grinding or drilling
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to it is a kind of reduce diamond wire cutting broken string cutting liquid, its by(a)PFPE:30 60 parts;(b)Perfluoro solvent:40 70 parts;(c)28 parts of fluorine-containing surfactant;(d)Organic base:1 1.5 parts of compositions.The silicon wafer cut by diamond wire cutting liquid of the present invention, not only with suitable viscosity and excellent chip suspension and dispersive property, and can reduce the occurrence of diamond wire cutting is broken, substantially prolongs the service life of diamond wire.In addition, being cut using the cutting liquid to silicon chip, silicon chip loss is few, high yield rate.Properties of product are splendid, are adapted to industry amplification and use.
Description
Technical field
It is especially a kind of to reduce cutting for diamond wire cutting broken string the present invention relates to a kind of cutting liquid for cutting and being used in silicon chip
Cut liquid.
Background technology
Buddha's warrior attendant line cutting technology is in booming as following main flow silicon chip cutting technique.However, cutting process
Because various factors can cause diamond wire to break.The mortar cut mode broken string distinguished therewith, there is more ripe broken string exception
Manage flow and method and mechanization mash welder.Due to diamond wire complex manufacturing technology, there are diamond particles and resin-oatmeal or electricity in surface
Plating is completed, therefore mash welder welding difficulty, and steel wire surface can not reduce diamond particles and resin-oatmeal or plating.Diamond wire breaks
After line, because the diamond wire abrasion of particles degree for participating in cutting silico briquette differs, cutting power can be caused variant, such as according to sand
Slurry cutting break line treatment, can cause aberration(Aberration:One silicon chip retrochromism is larger, forms excessive band)Or scrapped after broken string
Silicon rod loss is very big.Simultaneously as steel wire surface can not reduce diamond particles and resin-oatmeal or plating after diamond wire bonding wire, only
Can be shuttled cabling by steel wire in the silicon chip cut, can thus cause diamond wire surface diamond corner angle friction silicon chip, shape
Into the perforated line of aberration or mash welder bonding wire.
Break generally and occur in actinobacillus wheel broken string, take-up pulley broken string, gauze three key positions of broken string.In these three positions
The outage of gauze broken string accounts for diamond wire cutting operation process and always breaks more than the 90% of number.Solve the gold in gauze broken string site
Firm line disconnection problem, has very important meaning for reduction silicon chip cost.In this site, diamond wire in silicon chip except connecing
Outside touching, also cutting liquid, the greasy property of cutting liquid, and whether the chip in cutting process can be in time distributed to and cut
Cut in liquid, for safeguarding that the normal work of diamond wire plays very important effect.Therefore, need one kind badly and Buddha's warrior attendant is reduced or avoided
The method of wire cutting short-term.
The content of the invention
In order to solve the above problems, the invention provides a kind of cutting liquid for reducing diamond wire cutting broken string, cut using this
Cutting liquid cutting silicon chip, not only diamond wire is substantially reduced in the probability of cutting interrupt line, and this method cutting silicon chip abrasive material is damaged
Consumption is only 10 microns, and knife seam loss is suitable with untreated diamond wire, is all 90 microns.
Above-mentioned technical problem is solved to realize, the present invention proposes a kind of cutting liquid for reducing diamond wire cutting broken string.Specifically
Include following component:(a)PFPE:30-60 parts;(b)Perfluoro solvent:40-70 parts;(c)2-8 parts of fluorine-containing surfactant;
(d)Organic base:1-1.5 part.
PFPE in the present invention, is a kind of ether compound of perfluor class, can be with HFPO it is cloudy from
Prepared by son polymerization, using the krytox of Du Pont as the PFPE of representative basis oil or with tetrafluoroethene and hexafluoro third
Alkene is prepared by raw material photooxidation method, the PFPE basis oil produced by representative of Sol dimension, and its molecular weight is 1500-
6000.Diamond wire is divided into galvanoplastic diamond wire, resin method diamond wire, inlaying process diamond wire and method for brazing diamond wire, but perfluor
Polyethers all without any swelling action, suitably coordinates diamond wire to carry out silicon chip cutting operation this several diamond wire, and abrasive material is damaged
Consumption is only 10 microns, and knife seam loss is suitable with untreated diamond wire, is all 90 microns.And the greasy property pole of PFPE
It is good, it is " imperial crown " in lubricating oil circle.It is fully good that PFPE can fully infiltrate progress between diamond wire and silicon chip
Lubrication.
Perfluoro solvent in the present invention, refers to the organic solvent for not containing hydrogen atom, more specifically comprising FC-75, FC-77,
One or more kinds of mixtures in phenyl-hexafluoride, perfluoro-methyl benzene.The effect of perfluoro solvent is the viscosity for adjusting cutting liquid,
So as to be easier to flow in cutting process, and relatively low viscosity is more favorable to the chip dropped in cutting process as soon as possible
It is distributed in cutting liquid, it is hard to hard contact without causing chip to cause diamond wire, so that during reducing cutting silicon chip
The probability of diamond wire cutting broken string.
Fluorine-containing surfactant in the present invention, refers to perfluoro caprylic acid, and perfluoropolyether end group is carboxyl, amido, sulfonic acid
One or more kinds of mixtures in the perfluor class surfactant of base.Fluorine-containing surfactant can be that cutting silicon chip falls
The tiny chip rapid subsidence fallen is in cutting liquid so that chip departs from silicon chip and diamond wire as soon as possible, it is to avoid chip and gold
During the contact of firm line, reduction cutting silicon chip the occurrence of diamond wire cutting broken string.
Organic base in the present invention, is one or more of mixtures in triethanolamine, diethanol amine, monoethanolamine.Should
The carbon number of organic base is no more than 6, in order to which it has good compatibility with PFPE and perfluoro solvent.
A kind of Buddha's warrior attendant wire cutting liquid of the present invention, with excellent cooling performance and heat conductivility, and the density of cutting liquid
Than larger, in more than 1.6g/cm3, the chip that silicon chip cutting is dropped has good suspension and dispersive property in cutting liquid, or
It is good dispersion of the chip in cutting liquid to be permitted so that diamond wire cleaning is clean, and broken string is difficult when silicon chip is cut, and
And the blocking for also not resulting in nozzle is used for a long time in the line of cut.A kind of Buddha's warrior attendant wire cutting liquid of the present invention, for diamond wire
Silicon wafer thickness, TTV, WARP of cutting are satisfied by requirement, and this method cutting silicon chip abrasive material loss is only 10 microns, knife seam
Loss is suitable with the diamond wire that other types cutting liquid is used, and is all 90 microns, total yield rate > 99% of silicon chip cutting.And
And, the cutting liquid can be restored with chip by simple centrifugal treating, therefore there is the cutting liquid good repetition to make
It is good with performance, and the recycling of cutting liquid is simple, is highly suitable for industry amplification and uses.
Embodiment
Embodiment 1:Each raw material, which is weighed, by following weight obtains cutting liquid:
PFPE(KRYTOX GPL101 Dupont companies)60 parts;
Perfluoro solvent(FC-75 3M companies)40 parts;
Fluorine-containing surfactant(The Ai Fu companies of perfluoro caprylic acid three)2 parts;
Organic base(The factory of triethanolamine Tianjin reagent one):1.5 part.
Said components are stirred, as Buddha's warrior attendant wire cutting liquid.The cutting of diamond wire silicon chip is used it for, gold is found
Firm line is continuously used 1000 hours, not the occurrence of gauze breaks.When the line footpath of diamond wire is 90 microns, abrasive material loss
For 9 microns, knife seam loss is 95 microns.This shows, equally using the cutting liquid of the perfluoro-polyether, the cutting broken string of diamond wire
Situation does not almost occur, and the loss caused by cutting silicon chip is also very small.
Embodiment 2:Each raw material, which is weighed, by following weight obtains cutting liquid:
PFPE(KRYTOX GPL107 Dupont companies)30 parts;
Perfluoro solvent(FC-75 3M companies)70 parts;
Fluorine-containing surfactant(The Ai Fu companies of perfluoro caprylic acid three)4 parts;
Organic base(The factory of triethanolamine Tianjin reagent one):1 part.
Said components are stirred, as Buddha's warrior attendant wire cutting liquid.The cutting of diamond wire silicon chip is used it for, gold is found
Firm line is continuously used 800 hours, not the occurrence of gauze breaks.When the line footpath of diamond wire is 60 microns, abrasive material loss
For 8 microns, knife seam loss is 65 microns.This shows, using the cutting liquid, and the cutting broken string situation of diamond wire is not almost sent out
It is raw, and the loss caused by cutting silicon chip is also very small.Embodiment 3:Each raw material, which is weighed, by following weight obtains cutting liquid:
PFPE(The Solvay of fomblin series base oils molecular weight 6000)50 parts;
Perfluoro solvent(FC-75 3M companies)60 parts;
Fluorine-containing surfactant(The Ai Fu companies of perfluoro caprylic acid three)8 parts;
Organic base(The factory of triethanolamine Tianjin reagent one)1 part.
Said components are stirred, as Buddha's warrior attendant wire cutting liquid.The cutting of diamond wire silicon chip is used it for, gold is found
Firm line is continuously used 850 hours, not the occurrence of gauze breaks.When the line footpath of diamond wire is 80 microns, abrasive material loss
For 8 microns, knife seam loss is 90 microns.This shows, using the cutting liquid, and the cutting broken string situation of diamond wire is not almost sent out
It is raw, and the loss caused by cutting silicon chip is also very small.
And routinely we use hydrocarbon class polyethers(PEG classes)Or cutting liquid prepared by other aqueous polymerization things, identical
Under the conditions of use silicon wafer cut by diamond wire when, use no more than 200 hours, will occur at gauze diamond wire cutting broken string
Situation.Relative to conventional carbon hydrogen species cutting liquid, this cutting liquid containing PFPE can greatly prolong the use of diamond wire
Life-span.
General principle, principal character and the advantages of the present invention of the present invention has been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the simply explanation described in above-described embodiment and specification is originally
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof equivalent thereof.
Claims (4)
1. it is a kind of reduce diamond wire cutting broken string cutting liquid, it is characterised in that the cutting liquid by(a)PFPE:30-60 parts;
(b)Perfluoro solvent:40-70 parts;(c)2-8 parts of fluorine-containing surfactant;(d)Organic base:1-1.5 parts of compositions;Each component is by weight
Than for:
(a)PFPE:30-60 parts;
(b)Perfluoro solvent:40-70 parts;
(c)2-8 parts of fluorine-containing surfactant;
(d)Organic base:1-1.5 part.
2. a kind of cutting liquid for reducing diamond wire cutting broken string according to claim 1, it is characterised in that the perfluor gathers
The molecular weight of ether is 1500-6000.
A kind of cutting liquid of reduction diamond wire cutting broken string described in right as requested 1, it is characterised in that the perfluoro solvent,
Refer to FC-75, FC-77, phenyl-hexafluoride, one or more kinds of mixtures in the perfluoro solvent such as perfluoro-methyl benzene.
3. a kind of cutting liquid of reduction diamond wire cutting broken string described in right as requested 1, it is characterised in that the fluorine-containing table
Face activating agent, refers to perfluoro caprylic acid, perfluoropolyether end group is in carboxyl, amido, sulfonic perfluor class surfactant
One or more kinds of mixtures.
4. a kind of cutting liquid of reduction diamond wire cutting broken string described in right as requested 1, it is characterised in that the organic base,
It is one or more of mixtures in triethanolamine, diethanol amine, monoethanolamine.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201611038751.8A CN107201262A (en) | 2016-11-23 | 2016-11-23 | A kind of cutting liquid for reducing diamond wire cutting broken string |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201611038751.8A CN107201262A (en) | 2016-11-23 | 2016-11-23 | A kind of cutting liquid for reducing diamond wire cutting broken string |
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CN107201262A true CN107201262A (en) | 2017-09-26 |
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CN201611038751.8A Pending CN107201262A (en) | 2016-11-23 | 2016-11-23 | A kind of cutting liquid for reducing diamond wire cutting broken string |
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CN (1) | CN107201262A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110872484A (en) * | 2018-08-30 | 2020-03-10 | 洛阳阿特斯光伏科技有限公司 | Diamond grinding fluid for diamond wire cutting silicon rod and preparation method and application thereof |
CN113736550A (en) * | 2021-09-02 | 2021-12-03 | 江苏捷捷半导体新材料有限公司 | Diamond wire cutting fluid for circulating system of slicing equipment and preparation method of diamond wire cutting fluid |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87102398A (en) * | 1986-03-27 | 1987-10-07 | 奥西蒙特公司 | The holo-fluorine polyester endo-oil that is used for magnetic recording medium |
EP0694602A2 (en) * | 1994-07-29 | 1996-01-31 | Minnesota Mining And Manufacturing Company | Perfluoropolyether lubricating compositions |
WO1999025516A3 (en) * | 1997-11-13 | 1999-09-02 | Minnesota Mining & Mfg | Methods of working metal and compositions useful as working fluids therefor |
CN102618362A (en) * | 2012-02-27 | 2012-08-01 | 深圳市优宝惠新材料科技有限公司 | Friction-reducing lubricating coating composition |
CN107653037A (en) * | 2017-09-26 | 2018-02-02 | 中国石油化工股份有限公司 | A kind of Perfluoropolyether lubricant and preparation method thereof |
-
2016
- 2016-11-23 CN CN201611038751.8A patent/CN107201262A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87102398A (en) * | 1986-03-27 | 1987-10-07 | 奥西蒙特公司 | The holo-fluorine polyester endo-oil that is used for magnetic recording medium |
EP0694602A2 (en) * | 1994-07-29 | 1996-01-31 | Minnesota Mining And Manufacturing Company | Perfluoropolyether lubricating compositions |
WO1999025516A3 (en) * | 1997-11-13 | 1999-09-02 | Minnesota Mining & Mfg | Methods of working metal and compositions useful as working fluids therefor |
CN102618362A (en) * | 2012-02-27 | 2012-08-01 | 深圳市优宝惠新材料科技有限公司 | Friction-reducing lubricating coating composition |
CN107653037A (en) * | 2017-09-26 | 2018-02-02 | 中国石油化工股份有限公司 | A kind of Perfluoropolyether lubricant and preparation method thereof |
Non-Patent Citations (1)
Title |
---|
刘程 米裕民: "《表面活性剂性质理论与应用》", 30 June 2013 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110872484A (en) * | 2018-08-30 | 2020-03-10 | 洛阳阿特斯光伏科技有限公司 | Diamond grinding fluid for diamond wire cutting silicon rod and preparation method and application thereof |
CN110872484B (en) * | 2018-08-30 | 2021-07-02 | 洛阳阿特斯光伏科技有限公司 | Diamond grinding fluid for diamond wire cutting silicon rod and preparation method and application thereof |
CN113736550A (en) * | 2021-09-02 | 2021-12-03 | 江苏捷捷半导体新材料有限公司 | Diamond wire cutting fluid for circulating system of slicing equipment and preparation method of diamond wire cutting fluid |
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