CN107196629B - Discrete threshold voltage comparator with zero static power consumption - Google Patents

Discrete threshold voltage comparator with zero static power consumption Download PDF

Info

Publication number
CN107196629B
CN107196629B CN201710307691.3A CN201710307691A CN107196629B CN 107196629 B CN107196629 B CN 107196629B CN 201710307691 A CN201710307691 A CN 201710307691A CN 107196629 B CN107196629 B CN 107196629B
Authority
CN
China
Prior art keywords
transistor
voltage comparator
threshold
mns
buf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710307691.3A
Other languages
Chinese (zh)
Other versions
CN107196629A (en
Inventor
李琰
俞航
姜来
黄隆锦
刘少华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Simulated Microelectronics Shenzhen Co ltd
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Priority to CN201710307691.3A priority Critical patent/CN107196629B/en
Publication of CN107196629A publication Critical patent/CN107196629A/en
Application granted granted Critical
Publication of CN107196629B publication Critical patent/CN107196629B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12Analogue/digital converters
    • H03M1/124Sampling or signal conditioning arrangements specially adapted for A/D converters
    • H03M1/1245Details of sampling arrangements or methods

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Analogue/Digital Conversion (AREA)

Abstract

The invention discloses a discrete threshold voltage comparator with zero static power consumption, which comprises: the digital control circuit comprises a first transistor and a plurality of parallel threshold adjusting branches, wherein each threshold adjusting branch is connected with a digital enable bit of the first transistor and a digital enable bit of a voltage comparator, and each threshold adjusting branch adjusts the threshold voltage of the voltage comparator according to a digital control signal received by the digital enable bit. In the invention, a plurality of parallel threshold value adjusting branches are arranged in the voltage comparator, and the threshold value voltage of the voltage comparator is adjusted by a digital control signal received by a digital enable bit, thereby realizing the digital control of the threshold value voltage of the voltage comparator.

Description

Discrete threshold voltage comparator with zero static power consumption
Technical Field
The invention relates to the technical field of analog voltage comparators, in particular to a discrete threshold voltage comparator with zero static power consumption.
Background
The comparator is a core device of the Analog signal processing circuit, and is a precise sampling circuit or an Analog-to-Digital Converter (ADC for short), and the technical parameters of the comparator are the key to ensure the overall performance of the system.
In the technical field of analog voltage comparison, a high-precision and high-speed comparator adopts a multi-stage signal processing architecture. The input stage adopts a cascade mode of a plurality of amplifiers to realize the rapid high-gain amplification of the difference between an input signal and a threshold signal, and the output stage adopts a signal latch to realize the rapid conversion from an analog signal to a digital signal. Therefore, the conventional voltage comparator needs a high-gain and large-bandwidth amplifier circuit to improve the accuracy and speed of signal comparison, and the improvement of the gain and bandwidth of the analog amplifier circuit causes significant increase of the system power consumption.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present invention provide a discrete threshold voltage comparator with zero static power consumption. The technical scheme is as follows:
in one aspect, an embodiment of the present invention provides a discrete threshold voltage comparator with zero static power consumption, including: a first transistor and a plurality of parallel threshold adjusting branches,
each threshold adjusting branch circuit is connected with the first transistor and a digital enable bit of the voltage comparator, and adjusts the threshold voltage of the voltage comparator according to a digital control signal received by the digital enable bit.
In the discrete threshold voltage comparator with zero static power consumption according to the embodiment of the present invention, each of the threshold adjusting branches includes: a second transistor and a third transistor,
the grid electrode of the first transistor and the grid electrode of the second transistor in each threshold value adjusting branch circuit are connected with the input end of the voltage comparator, the source electrode of the first transistor is connected with a power supply voltage, the drain electrode of the first transistor is respectively connected with the source electrode of the second transistor in each threshold value adjusting branch circuit and the output end of the voltage comparator, the drain electrode of the second transistor is connected with the source electrode of the third transistor, the grid electrode of the third transistor in each threshold value adjusting branch circuit is connected with the digital enable bit of the voltage comparator, and the drain electrode of the third transistor in each threshold value adjusting branch circuit is grounded.
In the above discrete threshold voltage comparator with zero static power consumption according to the embodiment of the present invention, the discrete threshold voltage comparator further includes: and the Buffer (BUF) device is used for improving the driving capability of the voltage comparator and controlling the polarity of the output logic of the voltage comparator, the input end of the BUF device is respectively connected with the drain electrode of the first transistor and the source electrode of the second transistor in each threshold value adjusting branch circuit, and the output end of the BUF device is connected with the output end of the voltage comparator.
In the zero static power consumption discrete threshold voltage comparator according to the embodiment of the present invention, the BUF device is prepared in the form of an analog or digital circuit.
In the discrete threshold voltage comparator with zero static power consumption according to the embodiment of the present invention, the first transistor is a P-type MOS transistor, and the second transistor and the third transistor are both N-type MOS transistors.
In the discrete threshold voltage comparator with zero static power consumption according to the embodiment of the present invention, each of the threshold adjusting branches includes: a second transistor and a third transistor,
the grid electrode of the first transistor and the grid electrode of the second transistor in each threshold value adjusting branch circuit are connected with the input end of the voltage comparator, the drain electrode of the first transistor is connected with a power supply voltage, the source electrode of the first transistor is respectively connected with the drain electrode of the second transistor in each threshold value adjusting branch circuit and the output end of the voltage comparator, the source electrode of the second transistor is connected with the drain electrode of the third transistor, the grid electrode of the third transistor in each threshold value adjusting branch circuit is connected with the digital enable bit of the voltage comparator, and the source electrode of the third transistor in each threshold value adjusting branch circuit is grounded.
In the above discrete threshold voltage comparator with zero static power consumption according to the embodiment of the present invention, the discrete threshold voltage comparator further includes: the BUF device is used for improving the driving capacity of the voltage comparator and controlling the polarity of output logic of the voltage comparator, the input end of the BUF device is connected with the source electrode of the first transistor and each drain electrode of the second transistor in the threshold value adjusting branch circuit respectively, and the output end of the BUF device is connected with the output end of the voltage comparator.
In the zero static power consumption discrete threshold voltage comparator according to the embodiment of the present invention, the BUF device is prepared in the form of an analog or digital circuit.
In the discrete threshold voltage comparator with zero static power consumption according to the embodiment of the present invention, the first transistor is a P-type MOS transistor, and the second transistor and the third transistor are both N-type MOS transistors.
The technical scheme provided by the embodiment of the invention has the following beneficial effects:
the voltage comparator utilizes the digital control threshold voltage adjustment to eliminate static power consumption, realize the zero static power consumption discrete threshold voltage comparator with digitally adjustable threshold voltage, avoid reset operation and eliminate system dead time.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a discrete threshold voltage comparator according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a discrete threshold voltage comparator according to an embodiment of the present invention;
FIG. 3 is a circuit diagram of a discrete threshold voltage comparator according to an embodiment of the present invention;
FIG. 4 is a circuit diagram of another discrete threshold voltage comparator according to an embodiment of the present invention;
fig. 5 is a circuit diagram of another discrete threshold voltage comparator according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Example one
An embodiment of the present invention provides a discrete threshold voltage comparator with zero static power consumption, and referring to fig. 1, the voltage comparator may include: the first transistor MP0 and a plurality of parallel threshold adjusting branches P, each of the threshold adjusting branches P is connected to the first transistor MP0 and the digital enable bit EN of the voltage comparator, and each of the threshold adjusting branches P adjusts the threshold voltage of the voltage comparator according to the digital control signal received by the digital enable bit EN.
In the embodiment, the voltage comparator realizes the digital control of the threshold voltage of the voltage comparator by arranging a plurality of threshold adjusting branches P and adjusting the threshold voltage of the voltage comparator by a digital control signal received by a digital enable bit EN.
Specifically, referring to fig. 2, each threshold adjustment branch P may include: a second transistor MN and a third transistor MNs. The gate of the first transistor MP0 and the gate of the second transistor MN IN each threshold adjustment branch P are both connected to the input terminal IN of the voltage comparator, the source of the first transistor MP0 is connected to the power supply voltage VDD, the drain of the first transistor MP0 is connected to the source of the second transistor MN IN each threshold adjustment branch P and the output terminal OUT of the voltage comparator, the drain of the second transistor MN is connected to the source of the third transistor MNs, the gate of the third transistor MNs IN each threshold adjustment branch P is connected to the digital enable bit EN of the voltage comparator, and the drain of the third transistor MNs is grounded.
In this embodiment, the digital enable bit EN may control on or off of the third transistor MNS according to the received digital control signal, and further control whether the second transistor MN is on or not (for example, when a high level signal 1 sent by the digital enable bit EN is received by one threshold adjusting branch P, the third transistor MNS is turned on, the threshold adjusting branch P is connected to the circuit of the voltage comparator, when a low level signal 0 sent by the digital enable bit EN is received by the threshold adjusting branch P, the third transistor MNS is turned off, the threshold adjusting branch P is disconnected from the circuit of the voltage comparator, and it should be noted that when the threshold adjusting branch P is disconnected from the circuit of the voltage comparator, the static function is zero). Since the threshold voltage of the voltage comparator is determined by the width-to-length ratio of the first transistor MP0 and the overall width-to-length ratio of all the turned-on second transistors MN, and the overall width-to-length ratio of all the turned-on second transistors MN is proportional to the number of the turned-on second transistors MN (where, the width-to-length ratio is the ratio of the width to the length of the conduction channel of the transistors), the number of the turned-on third transistors MNs can be controlled by the digitized control signal received by the control digital enable bit EN, and further the number of the turned-on second transistors MN can be controlled, thereby achieving the purpose of digitally controlling the threshold voltage of the voltage comparator.
In this embodiment, after the threshold voltage is adjusted by the digital enable bit EN, the voltage comparator outputs a high level signal when the input voltage is greater than the threshold voltage, and outputs a low level signal when the input voltage is less than the threshold voltage.
It should be noted that, although only one threshold adjusting branch P is indicated in fig. 2, it is not indicated that the voltage comparator only includes one threshold adjusting branch P, and fig. 2 is merely an example, when the voltage comparator is actually designed, a plurality of threshold adjusting branches P may be designed according to actual requirements as shown in fig. 3, where the connection manner of each threshold adjusting branch P is the same.
In practical applications, the first transistor MP0 may be a P-type MOS transistor, and the second transistor MN and the third transistor MNs may be N-type MOS transistors. In order to obtain the fastest signal comparison speed, all MOS transistors adopt the minimum channel length allowed by the process.
Further, referring to fig. 3, in order to improve the driving capability of the voltage comparator and control the polarity of the output logic, the voltage comparator may further include: the BUF device 10 is used for improving the driving capability of the voltage comparator and controlling the polarity of the output logic of the voltage comparator, the input end of the BUF device 10 is respectively connected with the drain electrode of the first transistor MP0 and the source electrode of the second transistor MN in each threshold value adjusting branch P, and the output end of the BUF device 10 is connected with the output end OUT of the voltage comparator.
In this embodiment, the BUF device 10 may be not only a simple voltage driver for improving the driving capability of the voltage comparator, but also for changing the polarity of the output logic of the voltage comparator, for example: the voltage comparator originally outputs logic 0, but outputs logic 1 under the polarity inversion action of the BUF device 10. The addition of the BUF device 10 can control the output logic of the voltage comparator, so that the voltage comparator can adapt to more application scenes and the practicability is enhanced. In practical applications, the BUF device 10 may be fabricated in the form of an analog or digital circuit, which is not limited herein.
It should be noted that, in the voltage comparator, the first transistor MP0, the second transistor MN, and the third transistor MNs are all made of MOS transistors, and the sources and drains thereof are interchangeable and do not affect the operating status thereof, so that:
optionally, referring to fig. 4, each of the threshold adjusting branches P includes: a second transistor MN and a third transistor MNs. The gate of the first transistor MP0 and the gate of the second transistor MN IN each threshold adjustment branch P are both connected to the input terminal IN of the voltage comparator, the drain of the first transistor MP0 is connected to the power supply voltage VDD, the source of the first transistor MP0 is connected to the drain of the second transistor MN IN each threshold adjustment branch P and the output terminal OUT of the voltage comparator, the source of the second transistor MN is connected to the drain of the third transistor MNs, the gate of the third transistor MNs IN each threshold adjustment branch P is connected to the digital enable bit EN of the voltage comparator, and the source of the third transistor MNs IN each threshold adjustment branch P is grounded.
In the present embodiment, the principle of adjusting the threshold voltage of the two voltage comparators shown in fig. 2 and 4 is similar to that of the two voltage comparators, and both are adjusted according to the digital control signal received by the digital enable bit EN.
It should be noted that, although only one threshold adjusting branch P is indicated in fig. 4, it is not indicated that the voltage comparator only includes one threshold adjusting branch P, and fig. 4 is merely an example, when the voltage comparator is actually designed, a plurality of threshold adjusting branches P may be designed according to actual requirements as shown in fig. 5, where the connection manner of each threshold adjusting branch P is the same.
In practical applications, the first transistor MP0 may be a P-type MOS transistor, and the second transistor MN and the third transistor MNs may be N-type MOS transistors.
Further, referring to fig. 5, in order to improve the driving capability of the voltage comparator and control the polarity of the output logic, the voltage comparator may further include: the BUF device 10 is used for improving the driving capability of the voltage comparator and controlling the polarity of the output logic of the voltage comparator, the input end of the BUF device 10 is respectively connected with the source electrode of the first transistor MP0 and the drain electrode of the second transistor MN in each threshold value adjusting branch P, and the output end of the BUF device 10 is connected with the output end OUT of the voltage comparator.
In this embodiment, the BUF device 10 may be not only a simple voltage driver for improving the driving capability of the voltage comparator, but also for changing the polarity of the output logic of the voltage comparator, for example: the voltage comparator originally outputs logic 0, but outputs logic 1 under the polarity inversion action of the BUF device 10. The addition of the BUF device 10 can control the output logic of the voltage comparator, so that the voltage comparator can adapt to more application scenes and the practicability is enhanced. In practical applications, the BUF device 10 may be fabricated in the form of an analog or digital circuit, which is not limited herein.
The embodiment of the invention realizes the digital control of the threshold voltage of the voltage comparator by arranging a plurality of parallel threshold adjusting branches in the voltage comparator and adjusting the threshold voltage of the voltage comparator by a digital control signal received by a digital enable bit.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (8)

1. A zero static power discrete threshold voltage comparator, comprising: a first transistor (MP0) and a plurality of parallel threshold adjustment branches (P),
each threshold adjusting branch (P) is connected with the first transistor (MP0) and a digital enable bit (EN) of the voltage comparator, and adjusts the threshold voltage of the voltage comparator according to a digital control signal received by the digital enable bit (EN); each of said threshold adjustment branches (P) comprises: a second transistor (MN) and a third transistor (MNs), a gate of the first transistor (MP0) and a gate of the second transistor (MN) IN each of the threshold adjusting branches (P) are all connected to the input terminal (IN) of the voltage comparator, a source of the first transistor (MP0) is connected to the power supply Voltage (VDD), a drain of the first transistor (MP0) is respectively connected to a source of the second transistor (MN) IN each of the threshold adjusting branches (P) and the output terminal (OUT) of the voltage comparator, a drain of the second transistor (MN) is connected to a source of the third transistor (MNs), a gate of the third transistor (MNs) IN each of the threshold adjusting branches (P) is connected to the digital enable bit (EN) of the voltage comparator, and a drain of the third transistor (MNs) IN each of the threshold adjusting branches (P) is grounded.
2. The voltage comparator of claim 1, further comprising: the BUF device (10) is used for improving the driving capability of the voltage comparator and controlling the polarity of output logic of the voltage comparator, the input end of the BUF device (10) is connected with the drain electrode of the first transistor (MP0) and the source electrode of the second transistor (MN) in each threshold value adjusting branch circuit (P), and the output end of the BUF device (10) is connected with the output end (OUT) of the voltage comparator.
3. Voltage comparator according to claim 2, characterized in that the BUF device (10) is prepared in the form of an analog or digital circuit.
4. The voltage comparator according to claim 1, wherein the first transistor (MP0) is a P-type MOS transistor, and the second transistor (MN) and the third transistor (MNs) are both N-type MOS transistors.
5. Voltage comparator according to claim 1, characterized in that each of said threshold adjusting branches (P) comprises: a second transistor (MN) and a third transistor (MNS),
the gate of the first transistor (MP0) and the gate of the second transistor (MN) IN each of the threshold adjusting branches (P) are all connected to the input terminal (IN) of the voltage comparator, the drain of the first transistor (MP0) is connected to the power supply Voltage (VDD), the source of the first transistor (MP0) is respectively connected to the drain of the second transistor (MN) IN each of the threshold adjusting branches (P) and the output terminal (OUT) of the voltage comparator, the source of the second transistor (MN) is connected to the drain of the third transistor (MNs), the gate of the third transistor (MNs) IN each of the threshold adjusting branches (P) is connected to the digital enable bit (EN) of the voltage comparator, and the source of the third transistor (MNs) IN each of the threshold adjusting branches (P) is grounded.
6. The voltage comparator of claim 5, further comprising: the BUF device (10) is used for improving the driving capability of the voltage comparator and controlling the polarity of output logic of the voltage comparator, the input end of the BUF device (10) is connected with the source electrode of the first transistor (MP0) and the drain electrode of the second transistor (MN) in each threshold value adjusting branch circuit (P), and the output end of the BUF device (10) is connected with the output end (OUT) of the voltage comparator.
7. Voltage comparator according to claim 6, characterized in that the BUF device (10) is prepared in the form of an analog or digital circuit.
8. The voltage comparator according to claim 5, wherein the first transistor (MP0) is a P-type MOS transistor, and the second transistor (MN) and the third transistor (MNS) are both N-type MOS transistors.
CN201710307691.3A 2017-05-04 2017-05-04 Discrete threshold voltage comparator with zero static power consumption Active CN107196629B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710307691.3A CN107196629B (en) 2017-05-04 2017-05-04 Discrete threshold voltage comparator with zero static power consumption

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710307691.3A CN107196629B (en) 2017-05-04 2017-05-04 Discrete threshold voltage comparator with zero static power consumption

Publications (2)

Publication Number Publication Date
CN107196629A CN107196629A (en) 2017-09-22
CN107196629B true CN107196629B (en) 2020-10-23

Family

ID=59873499

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710307691.3A Active CN107196629B (en) 2017-05-04 2017-05-04 Discrete threshold voltage comparator with zero static power consumption

Country Status (1)

Country Link
CN (1) CN107196629B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201018463Y (en) * 2006-11-24 2008-02-06 华中科技大学 Single side lagging comparators
CN102238776A (en) * 2010-04-21 2011-11-09 通嘉科技股份有限公司 Calibration device and method, multichannel driving circuit and current balancing method thereof
JP2011228861A (en) * 2010-04-16 2011-11-10 New Japan Radio Co Ltd Automatic duty ratio adjusting comparator circuit
CN102570784A (en) * 2010-12-10 2012-07-11 立积电子股份有限公司 Power on/reset circuit and method for controlling start/reset state of digital circuit
CN105630054A (en) * 2014-11-04 2016-06-01 上海华虹宏力半导体制造有限公司 Hysteresis voltage comparator
CN105871380A (en) * 2016-03-29 2016-08-17 浙江大学 Comparator capable of adjusting threshold, and threshold adjusting method thereof
WO2020028687A1 (en) * 2018-08-01 2020-02-06 Texas Instruments Incorporated Sound sensing with time-varying thresholds

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201018463Y (en) * 2006-11-24 2008-02-06 华中科技大学 Single side lagging comparators
JP2011228861A (en) * 2010-04-16 2011-11-10 New Japan Radio Co Ltd Automatic duty ratio adjusting comparator circuit
CN102238776A (en) * 2010-04-21 2011-11-09 通嘉科技股份有限公司 Calibration device and method, multichannel driving circuit and current balancing method thereof
CN102570784A (en) * 2010-12-10 2012-07-11 立积电子股份有限公司 Power on/reset circuit and method for controlling start/reset state of digital circuit
CN105630054A (en) * 2014-11-04 2016-06-01 上海华虹宏力半导体制造有限公司 Hysteresis voltage comparator
CN105871380A (en) * 2016-03-29 2016-08-17 浙江大学 Comparator capable of adjusting threshold, and threshold adjusting method thereof
WO2020028687A1 (en) * 2018-08-01 2020-02-06 Texas Instruments Incorporated Sound sensing with time-varying thresholds

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A sub-nW mV-range programmable threshold comparator for near-zero-energy sensing;Aili Wang;《 2016 IEEE International Symposium on Circuits and Systems》;20160811;1054-1057 *
基于单片机阈值数字可调电压比较器设计;刘海宁;《电气技术与自动化》;20130630;第42卷(第4期);181-183 *

Also Published As

Publication number Publication date
CN107196629A (en) 2017-09-22

Similar Documents

Publication Publication Date Title
CN101645710B (en) Low supply voltage pipelined folded interpolating analog-to-digital converter
WO2015169051A1 (en) Variable gain amplifier
CN101986570B (en) Analog-to-digital converter (ADC) and sample-and-hold circuit thereof
CN105183061A (en) Voltage buffer circuit
US8446178B2 (en) Comparator and analog-to-digital
CN106059587A (en) High speed low offset voltage comparator circuit
CN101222216A (en) Comparator
CN107196629B (en) Discrete threshold voltage comparator with zero static power consumption
CN107134990B (en) Discrete threshold voltage comparator with zero static power consumption
CN108199701B (en) High-speed CMOS transmission gate switch circuit
US9325287B2 (en) Programmable gain amplifier with controlled gain steps
CN115421546B (en) Voltage buffer
CN202362693U (en) Reference voltage generating circuit for pipelined analog-to-digital converter
CN103490752A (en) Flash analogue-to-digital conversion circuit comparator circuit with function of automatic zero resetting and function of automatic calibration
US20110267145A1 (en) Comparison apparatus and speed-up method for comparator
US7352215B2 (en) High speed latch comparators
EP3675358B1 (en) High-speed decision device
US10333506B2 (en) High-speed current comparator suitable for nano-power circuit design
US6292030B1 (en) Pre-charged high-speed comparator
CN114884491A (en) Comparator circuit, chip and electronic equipment
CN112398476B (en) Low-power consumption comparator with low delay distortion characteristic
US20100127910A1 (en) Comparator and pipelined adc utlizing the same
CN203193607U (en) PMOS transistor-based source follower
CN111697936A (en) Low-power-consumption complementary digital variable gain amplifier
CN111030694B (en) Ultra-wideband source random hold amplifier based on inductive peaking

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20240122

Address after: No.3688 Nanhai Avenue, Yuehai street, Nanshan District, Shenzhen City, Guangdong Province

Patentee after: Yu Hang

Country or region after: China

Address before: 518000 511, office building, Shenzhen University, Nanshan District, Shenzhen City, Guangdong Province

Patentee before: SHENZHEN University

Country or region before: China

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20240222

Address after: 518057, 216E, 2nd Floor, Building 3, Zone 30, Kefa Road, Science Park Community, Yuehai Street, Nanshan District, Shenzhen City, Guangdong Province

Patentee after: Simulated Microelectronics (Shenzhen) Co.,Ltd.

Country or region after: China

Address before: No.3688 Nanhai Avenue, Yuehai street, Nanshan District, Shenzhen City, Guangdong Province

Patentee before: Yu Hang

Country or region before: China