CN107195599A - A kind of power model provided with two-side radiation device - Google Patents
A kind of power model provided with two-side radiation device Download PDFInfo
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- CN107195599A CN107195599A CN201710454375.9A CN201710454375A CN107195599A CN 107195599 A CN107195599 A CN 107195599A CN 201710454375 A CN201710454375 A CN 201710454375A CN 107195599 A CN107195599 A CN 107195599A
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- 230000005855 radiation Effects 0.000 title claims abstract description 22
- 238000005452 bending Methods 0.000 claims abstract description 7
- 238000003780 insertion Methods 0.000 claims abstract description 6
- 230000037431 insertion Effects 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 151
- 239000002184 metal Substances 0.000 claims description 151
- 239000000758 substrate Substances 0.000 claims description 142
- 238000003475 lamination Methods 0.000 claims description 20
- 239000004033 plastic Substances 0.000 claims description 19
- 229920003023 plastic Polymers 0.000 claims description 19
- 238000005245 sintering Methods 0.000 claims description 19
- 239000012212 insulator Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000009434 installation Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 8
- 239000012530 fluid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000010257 thawing Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 206010020741 Hyperpyrexia Diseases 0.000 description 1
- 235000003283 Pachira macrocarpa Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 241001083492 Trapa Species 0.000 description 1
- 235000014364 Trapa natans Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 235000009165 saligot Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention discloses a kind of power model provided with two-side radiation device, including power model and it is arranged on the heat abstractor of power model lower surface and is arranged on multiple heat pipes of power model upper surface, heat abstractor is provided with heat pipe insert port, heat pipe includes evaporator section, multiple evaporator sections are staggered in the upper surface of power model, evaporator section forms linkage section, the heat pipe insert port of linkage section insertion heat abstractor and fixation in the edge downward bending of power model.The present invention is combined carry out two-side radiation using heat abstractor with heat pipe, reduce the thermal resistance of power model, improve the radiating efficiency of power model, and small volume, simplify radiator structure, radiating effect is improved, cost is saved, it is easy for installation, and it is easy to drive the installation of pcb board, alleviate weight.
Description
Technical field
The present invention relates to electric and electronic power module, especially a kind of power model provided with two-side radiation device.
Background technology
Power Electronic Technique occupies very important status, electric and electronic power mould in current fast-developing industrial circle
Block is widely used to electric automobile as the representative of Power Electronic Technique, and photovoltaic generation, wind-power electricity generation, industrial frequency conversion etc. is gone
Industry.With the emergence of China's industry, electric and electronic power module has more wide market prospects.
Existing electric and electronic power module encapsulation volume is big, and weight weight does not meet the fields such as electric automobile, Aero-Space
High power density, light-weighted requirement.The larger electric and electronic power module of volume, its stray inductance often also than larger, this
It can cause that overshoot voltage is larger, loss increase, and also limit the application in high switching frequency occasion.SiC power electronics devices
Part has high frequency, high temperature, efficient characteristic, but the stray inductance of existing power model is larger, limits the performance of SiC performances.
With the continuous upgrading of application end power density, the encapsulating structure of existing power model has hindered the further of power density
Lifting, it is necessary to which the growing demand of power density could be met by developing significantly more efficient radiator structure.
In addition, the existing power module architectures provided with two-side radiation device generally require to add in the upper and lower both sides of module
Heat abstractor is filled, not only radiator structure is complicated, and cost is high, volume is big, installs also inconvenient, is respectively mounted additionally, due to two-sided
There is heat abstractor, the installation of driving plate is also relatively difficult.
The content of the invention
Goal of the invention：In view of the above-mentioned drawbacks of the prior art, the present invention is intended to provide a kind of provided with two-side radiation dress
The power model put.
Technical scheme：A kind of power model provided with two-side radiation device, including power model and it is arranged on power model
The heat abstractor of lower surface and the multiple heat pipes for being arranged on power model upper surface, heat abstractor are provided with heat pipe insert port,
Heat pipe includes evaporator section, and evaporator section is in the edge downward bending formation linkage section of power model, linkage section insertion heat abstractor
Heat pipe insert port and fixation.
Further, the power model includes drive terminal, and drive terminal is connected with driving plate, the driving plate and work(
Heat pipe is provided between rate module.
Further, the power model also includes positive pole power terminal, negative pole power terminal, power output terminal, top
Portion's metal-insulator substrate and bottom metal insulated substrate, the top metal insulated substrate and bottom metal insulated substrate lamination
Set, chip, positive pole power terminal, negative pole power end are provided between top metal insulated substrate and bottom metal insulated substrate
Son, power output terminal are electrically connected with chip.
Further, the top metal insulated substrate and bottom metal insulated substrate are sintered on the two relative face
There is chip.
Further, in addition to plastic shell, the evaporator section of the heat pipe is sintered on top metal insulated substrate；It is described
Evaporator section is wrapped in plastic shell；Or, the evaporator section is exposed at outside plastic shell, and plastic shell is by top metal
The center section of insulated substrate upper surface and the center section of bottom metal insulated substrate lower surface are exposed outside.
Further, the power output terminal includes weld part and the connecting portion on the outside of plastic shell, the weldering
Socket part is located between the chip sintered on top metal insulated substrate and the chip sintered on bottom metal insulated substrate.
Further, the bottom metal insulated substrate lower surface is provided with turbulence structure, the upper surface of the heat abstractor
Provided with flow-disturbing hole, the turbulence structure stretches into heat sink interior by flow-disturbing hole and sealed at flow-disturbing aperture, in radiating dress
Put the heat exchanger channels of Inner Constitution heat eliminating medium.
Further, the cylindric pin-fin that turbulence structure is arranged for fork.
Further, positive pole power terminal is electrically connected with the chip on bottom metal insulated substrate, negative pole power terminal with
Chip electrical connection on top metal insulated substrate；The chip sintered on top metal insulated substrate be lower half-bridge switch chip and
The chip sintered on lower half-bridge diode chip for backlight unit, bottom metal insulated substrate is upper half-bridge switch chip and upper half-bridge diode core
Piece；Wherein, upper half-bridge switch chip is set with lower half-bridge diode chip for backlight unit lamination, lower half-bridge switch chip and upper half-bridge diode
Chip-stack is set.
Further, positive pole power terminal and negative pole power terminal and top metal insulated substrate and bottom metal insulation base
Plate is electrically connected, and the chip sintered on the top metal insulated substrate is lower half-bridge diode chip for backlight unit and upper half-bridge diode core
The chip sintered on piece, bottom metal insulated substrate be lower half-bridge switch chip and upper half-bridge switch chip, wherein, lower half-bridge two
Pole pipe chip is set with lower half-bridge switch chip-stack, and upper half-bridge diode chip for backlight unit is set with upper half-bridge switch chip-stack；
Or, the chip sintered on top metal insulated substrate be upper half-bridge switch chip and upper half-bridge diode chip for backlight unit,
The chip sintered on bottom metal insulated substrate be lower half-bridge switch chip and lower half-bridge diode chip for backlight unit, wherein, upper half-bridge is opened
Close chip to set with lower half-bridge diode chip for backlight unit lamination, upper half-bridge diode chip for backlight unit is set with lower half-bridge switch chip-stack.
Beneficial effect：The present invention is combined carry out two-side radiation using heat abstractor with heat pipe, reduces power model
Thermal resistance, improves the radiating efficiency of power model, and small volume, simplifies radiator structure, improves radiating effect, saves into
This, it is easy for installation, and it is easy to drive the installation of pcb board.In addition, top metal insulated substrate and bottom metal insulated substrate are folded
Layer is set, and there is stacked relation between segment chip, and power output terminal also serves as layer structure and is sintered in cathode metal insulation
Between substrate and negative metal insulated substrate, loop stray inductance can be substantially reduced, the volume of power model is reduced, saved
Cost, alleviates weight.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is heat abstractor schematic diagram；
Fig. 3 is a kind of radiating mode schematic diagram；
Fig. 4, Fig. 5, Fig. 6 are the assembling process schematic diagrames of embodiment 1；
Fig. 7 is the power module architectures schematic diagram of embodiment 1；
Fig. 8 is the structural representation of embodiment 2；
Fig. 9 is the power model schematic rear view of embodiment 3；
Figure 10 is the turbulence structure schematic diagram of embodiment 3；
Figure 11 is the flow direction schematic diagram of embodiment 3；
Figure 12 is the heat abstractor schematic diagram of embodiment 3；
Figure 13 is the power module architectures schematic diagram of embodiment 4.
Embodiment
The technical program is described in detail below by embodiment combination accompanying drawing.
The present invention proposes a kind of power model and heat abstractor 12 provided with two-side radiation device, by provided with two-sided
The napex metal level design hyperpyrexia heat conducting pipe 13 of the power model of heat abstractor, and heat abstractor 12, it is possible to decrease power model
Thermal resistance, reduces the volume of heat abstractor 12, is easy to power model and driving plate 11 to install, and saves cost.
Embodiment 1：
As shown in figure 1, a kind of power model provided with two-side radiation device 12, including power model, plastic shell 15, set
Put power model lower surface heat abstractor 12 and be arranged on multiple heat pipes 13 of power model upper surface.
As shown in Fig. 2 heat abstractor 12 is provided with heat pipe insert port 121, heat pipe 13 includes evaporator section 131, evaporator section 131
Top be connected on power model, multiple evaporator sections 131 are staggered in the upper surface of power model in the present embodiment, evaporation
Section 131 forms linkage section 132 in the edge downward bending of power model, and the heat pipe of the insertion heat abstractor 12 of linkage section 132 is inserted
Entrance 121 is simultaneously fixed, and the present embodiment middle connecting segment 132 includes the condensation segment that it extends, condensation segment insertion heat abstractor 12
Heat pipe insert port 121 is simultaneously fixed；Multiple evaporator sections 131 can also using it is parallel but interlock by the way of, i.e., top is not attached to
On power model, its main body is sintered in the upper surface of power model, and the two ends of heat pipe 13 are downward in the edge of power model
Bending forms linkage section 132, and the heat pipe insert port 121 of the insertion heat abstractor 12 of linkage section 132 is simultaneously fixed.
Heat abstractor 12 can be attached with the cold end of heat pipe 13 by solder, or be connected by other media
Connect, or be attached by interference fit.The cold end of heat pipe 13 can be contacted directly with liquid radiating medium, now need to carry out scattered
The sealing of hot device and the connecting hole of heat pipe 13.
Power model include positive pole power terminal 1, negative pole power terminal 2, power output terminal 3, drive terminal 10,
Top metal insulated substrate 4 and bottom metal insulated substrate 5, the top metal insulated substrate 4 and bottom metal insulation base
The lamination of plate 5 is set, and is parallel just to structure, the metal-insulator substrate being connected in the present embodiment with negative pole power terminal 2 is top
Metal-insulator substrate 4, the metal-insulator substrate being connected with positive pole power terminal 1 is bottom metal insulated substrate 5, will can also be pushed up
The component of portion's metal-insulator substrate 4 is exchanged with the module position of bottom metal insulated substrate 5, and the effect of present design is not influenceed.Top
Sintering has chip, top metal insulation base to portion's metal-insulator substrate 4 on the two relative face with bottom metal insulated substrate 5
Plate 4, bottom metal insulated substrate 5 and power output terminal 3 are electrically connected with chip.Drive terminal 10 is connected with driving plate
11, driving plate 11 is fixed on the power model upper surface provided with two-side radiation device by the good adhesive glue of heat conductivility, drives
It is dynamic that heat pipe 13 is provided between plate 11 and power model.
Power output terminal 3 includes weld part 31 and the connecting portion 32 positioned at the outside of plastic shell 15, the weld part 31
Between the chip sintered on the chip and bottom metal insulated substrate 5 sintered on top metal insulated substrate 4.
As shown in figure 3, heat abstractor 12 can use water cooling, air-cooled or other radiating modes commonly used in the art, this reality
It is air-cooled radiating device to apply the heat abstractor 12 in example, and the cold end of heat pipe 13 is inserted in air-cooled radiator.
It is the assembled portion flow of power model and heat pipe 13 in the present embodiment as shown in Fig. 4, Fig. 5, Fig. 6, passes through soft pricker
One end of heat pipe 13 is welded on the outer surface of power model inside top metal-insulator substrate 4 by the mode of weldering；Then to module
Injection molding packaging is carried out, then direction progress bending of the heat pipe 13 outside injection mold block to bottom metal insulated substrate 5 will be completed, this
The evaporator section 131 of heat pipe 13 is wrapped in plastic shell 15 in embodiment, now, and plastic shell 15 only insulate bottom metal
The center section of the lower surface of substrate 5 is exposed outside, contacts radiating with the heat abstractor of its bottom for convenience, and not by top
The center section of the upper surface of metal-insulator substrate 4 is exposed outside.
Now, the heat of power chip is transmitted to the evaporator section 131 of heat pipe 13, heat pipe by top metal insulated substrate 4
Filled media inside 13 is changed into vapour phase from liquid phase, and vapour phase heat eliminating medium is reached after the cold end of heat pipe 13, is changed into liquid phase again, and
Evaporator section 131 is reached in the presence of capillary siphoning, constantly circulation realizes and conducts the heat of module top to cold end
Purpose.In order to reduce the evaporator section 131 of heat pipe 13 and the thermal resistance of top metal insulated substrate 4, evaporator section 131 is welded by solder
It is connected in power model top metal.For further optimization radiating effect, the arrangement of heat pipe 13 is divided into staggered bi-directional arrangement.
Some elements can also produce amount of heat in the course of the work in the driving plate 11 of power model, if dissipated not in time
Heat, equally exists the risk that element burns.Power model of the present invention on top metal insulated substrate 4 due to being disposed with high heat conduction
Heat pipe 13, driving plate 11 can be contacted by heat eliminating medium with heat pipe 13, and now the heat of driving plate 11 can also pass through heat
Pipe 13 is conducted to radiator, further increases the reliability of system.
In addition, as shown in fig. 7, in the present embodiment, the chip on positive pole power terminal 1 and bottom metal insulated substrate 5 is electric
Connection, negative pole power terminal 2 is electrically connected with the chip on top metal insulated substrate 4；Sintered on top metal insulated substrate 4
Chip is that the chip sintered on lower half-bridge switch chip 8 and lower half-bridge diode chip for backlight unit 9, bottom metal insulated substrate 5 is upper half
Bridge switch chip 6 and upper half-bridge diode chip for backlight unit 7；Wherein, upper half-bridge switch chip 6 is set with the lower lamination of half-bridge diode chip for backlight unit 9
Put, lower half-bridge switch chip 8 is set with the upper lamination of half-bridge diode chip for backlight unit 7.Specifically：Set on bottom metal insulated substrate 5
There is upper half-bridge switch chip 6, the weld part 31 of power output terminal 3 is sintered in the upper surface of half-bridge power chip, in output
Sintering has lower half-bridge diode chip for backlight unit 9 on power terminal 3, and upper half-bridge switch chip 6 is set with the lower lamination of half-bridge diode chip for backlight unit 9
Put, lower half-bridge diode chip for backlight unit 9 is located at the top of upper half-bridge switch chip 6, the upper surface sintering of lower half-bridge diode has top
Metal-insulator substrate 4；Similarly, half-bridge diode chip for backlight unit 7, power output terminal 3 are additionally provided with bottom metal insulated substrate 5
Weld part 31 burnt in the one side towards bottom metal insulated substrate 5 with upper half-bridge switch chip 6 and upper half-bridge diode chip for backlight unit 7
Knot, is sintered in the one side towards top metal insulated substrate 4 with lower half-bridge switch chip 8 and lower half-bridge diode chip for backlight unit 9.Specifically
, the socket part 31 of power output terminal 3 is sintered in the upper surface of half-bridge diode chip for backlight unit 7, is also burnt on power output terminal 3
Lower half-bridge switch chip 8 is had, lower half-bridge switch chip 8 is set with the upper lamination of half-bridge diode chip for backlight unit 7, lower half-bridge switch chip
8 are located at the top of upper half-bridge diode chip for backlight unit 7, and the lower upper surface of half-bridge switch chip 8 has also sintered top metal insulated substrate 4.
Sintering described in the present embodiment is sintered specifically by weld layer 14, because switch chip is silicon or carborundum material
Material has the structure of upper surface lower surface titanium nickeline metal by plating or sputtering or evaporation, therefore weld layer 14 can be tin
The cored solders such as lead are by sintering the weld layer 14 formed or silver paste by sintering the weld layer 14 formed.
Top metal insulated substrate 4 and the metal-insulator substrate that bottom metal insulated substrate 5 is used are equal in the present embodiment
Include insulated substrate and the metal level of substrate both sides for DBC, i.e. top metal insulated substrate 4, towards bottom metal insulated substrate 5
One side on be mounted with chip, the another side of non-chip is then top metal insulated substrate metal layer on back 41, similarly, bottom
Portion's metal-insulator substrate 5 also has identical structure, and non-chip one side is bottom metal insulated substrate metal layer on back 51；This
Art personnel can not also use DBC structures when implementing, it would however also be possible to employ aluminium is covered in insulated substrate both sides, or copper is covered in side
Cover the structure that the metals such as aluminium are covered in dielectric both sides in side；Plastic shell 15 makes for transmission mould integrated forming technique,
The thermosetting plastics of thawing is injected into die cavity by plastic package press, the power model through oversintering half is placed with die cavity
Finished product, the thermosetting plastics of thawing reaches can be fast curing-formed after solidification temperature, forms the modeling shown in design of the present invention
Seal shell 15.
Negative pole power terminal 2 is sintered on the layer on surface of metal of top metal insulated substrate 4, top metal insulated substrate 4 and set
Have top metal insulated substrate surface metal-layer, half-bridge driven localized metallic on half-bridge driven localized metallic layer and second on first
Sintering has lower half-bridge switch chip 8 and lower half-bridge diode chip for backlight unit 9 on layer, the top metal insulated substrate surface metal-layer,
Half-bridge driven localized metallic layer is connected with a upper half-bridge drive terminal respectively on half-bridge driven localized metallic layer and second on first
101, the gate pole of upper half-bridge switch chip 6 is electrically connected by metal contiguous block with half-bridge driven localized metallic layer on described first,
The metal contiguous block that power output terminal 3 is provided with is electrically connected with half-bridge driven localized metallic layer on second.
Lower half-bridge driven localized metallic layer, lower half-bridge driven localized metallic are additionally provided with the top metal insulated substrate 4
Layer is connected with the gate pole of the lower half-bridge switch chip 8, and the other end of lower half-bridge driven localized metallic layer is connected with a lower half
Bridge drive terminal 102, the surface metal-layer of the top metal insulating barrier is also connected with a lower half-bridge drive terminal 102.
Embodiment 2：
The present embodiment and the structure of embodiment 1 are essentially identical, and difference is：
As shown in figure 8, the upper surface sintering of top metal insulated substrate 4 has the cold end outside staggered heat pipe 13, heat
To the direction bending of bottom metal insulated substrate 5, and insert inside heat abstractor 12.Driving plate 11 is connected with drive terminal 10,
And another surface of heat pipe 13 is fixed on by highly thermally conductive binding material, reach the purpose of driving chip radiating.Now, plastic packaging
Shell 15 is by the center section of the upper surface of top metal insulated substrate 4 and the center section of the lower surface of bottom metal insulated substrate 5
It is exposed outside, the center section of the upper surface of top metal insulated substrate 4 and the center section of the lower surface of bottom metal insulated substrate 5
Plastic shell 15 is higher by, is easy to the contact with heat abstractor 12；The evaporator section 131 of heat pipe 13 is sintered in top metal insulation base
On plate 4, evaporator section 131 is exposed at outside plastic shell 15.
Embodiment 3：
The present embodiment and the structure of embodiment 1 are essentially identical, and difference is：
As shown in Fig. 9, Figure 10, Figure 11, the present embodiment has in the center section sintering of the lower surface of bottom metal insulated substrate 5
Turbulence structure 52, fluid is directly contacted with turbulence structure 52, reaches more preferable radiating effect.Turbulence structure 52 in the present embodiment
For the cylindric pin-fin of fork row, the lower surface of bottom metal insulated substrate 5 is sintered in by solder, flow of fluid is to direction
Pin-fin be in cross arrangement, add the perturbation of fluid, enhance fluid and pin-fin heat transfer effect.
As shown in figure 12, the upper surface of heat abstractor 12 is provided with flow-disturbing hole 122, and the turbulence structure 52 passes through flow-disturbing hole
122 stretch into the inside of heat abstractor 12 and in the place's sealing of 122 mouthfuls of flow-disturbing hole, in the heat exchange of the Inner Constitution heat eliminating medium of heat abstractor 12
Passage.
Turbulence structure 52 is not limited to cylindric pin-fin, and cross section can also be water chestnut property, square, or rib-like knot
The forms such as structure.Pin-fin material is generally copper material, and is coated with other metals on surface, by bottom metal insulated substrate 5
Lower surface Printing Paste, and utilize frock clamp, pin-fin be sintered in the lower surface of bottom metal insulated substrate 5, power
The heat that inside modules are produced is conducted to pin-fin by bottom metal insulated substrate 5, and pin-fin is directly contacted with fluid,
The heat-conducting silicone grease of the lower surface metal layer slab construction of bottom metal insulated substrate 5 is eliminated, the radiating surface of power model is added
Product, reduces the thermal resistance of power model.
Embodiment 4：
The present embodiment and the structure of embodiment 1 are essentially identical, and difference is：
As shown in figure 13, positive pole power terminal 1 and negative pole power terminal 2 and top metal insulated substrate 4 and bottom metal
Insulated substrate 5 is electrically connected, specifically, positive pole power terminal 1 and negative pole power terminal 2 are sintered in top metal insulated substrate
On 4, and it is connected with bottom metal insulated substrate 5 by metal connecting pole；
Or, positive pole power terminal 1 and negative pole power terminal 2 are sintered on bottom metal insulated substrate 5, and with top
Metal-insulator substrate 4 is connected by metal connecting pole；Or, positive pole power terminal 1 and negative pole power terminal 2 and top metal are exhausted
Edge substrate 4 and bottom metal insulated substrate 5 are sintered.
The chip sintered on the top metal insulated substrate 4 is lower half-bridge diode chip for backlight unit 9 and upper half-bridge diode core
The chip sintered on piece 7, bottom metal insulated substrate 5 be lower half-bridge switch chip 8 and upper half-bridge switch chip 6, wherein, lower half
Bridge diode chip for backlight unit 9 is set with the lower lamination of half-bridge switch chip 8, upper half-bridge diode chip for backlight unit 7 and the upper lamination of half-bridge switch chip 6
Set；
Top metal insulated substrate 4 includes realizing the top-gold electrically connected by way of sintering with positive pole power terminal 1
Belong to the cathode metal of insulated substrate 4 layer, realize the top metal insulation base electrically connected by way of sintering with negative pole power terminal 2
The negative metal of plate 4 layer, the upper half-bridge switch chip 6 electrically connected with power output terminal 3 and a upper half-bridge drive terminal 101 are sent out
Emitter-base bandgap grading/source electrode localized metallic layer, and the upper gate pole of half-bridge switch chip 6 electrically connected with half-bridge drive terminal 101 on another
Localized metallic layer；
The surface sintering of top metal insulated substrate 4 cathode metal layer has a upper half-bridge diode chip for backlight unit 7, and with upper half-bridge
The negative pole of diode chip for backlight unit 7 is relative, and the surface sintering of the negative metal of top metal insulated substrate 4 layer has lower half-bridge diode chip for backlight unit
9, and, upper half-bridge switch chip 6 gate pole localized metallic layer and upper half-bridge switch relative with the positive pole of lower half-bridge diode chip for backlight unit 9
The gate pole electrical connection of chip 6.
Bottom metal insulated substrate 5 include with positive pole power terminal 1 by way of sintering or ultrasonic wave metal welding it is real
The cathode metal of bottom metal insulated substrate 5 layer and negative pole power terminal 2 and a lower half-bridge drive terminal 102 now electrically connected
The negative metal of bottom metal insulated substrate 5 layer of electrical connection, and the lower half electrically connected with another lower half-bridge drive terminal 102
The gate pole localized metallic layer of bridge switch chip 8；Positive pole power terminal 1, negative pole power terminal 2 can pass through sintering or ultrasonic wave metal
The mode of welding is respectively connecting to the cathode metal of bottom metal insulated substrate 5 layer and the negative metal of bottom metal insulated substrate 5 layer；
The surface sintering of bottom metal insulated substrate 5 cathode metal layer has a upper half-bridge switch chip 6, and with upper half-bridge switch
The colelctor electrode of chip 6 or drain electrode are just right, and the negative metal layer surface of bottom metal insulated substrate 5 sintering has lower half-bridge switch chip 8,
And it is just right with the emitter stage of lower half-bridge switch chip 8；The gate pole localized metallic layer of lower half-bridge switch chip 8 by way of sintering with
The gate pole electrical connection of lower half-bridge switch chip 8.
Embodiment 5：
The present embodiment and the structure of embodiment 4 are essentially identical, and difference is：
The chip sintered on top metal insulated substrate 4 is upper half-bridge switch chip 6 and upper half-bridge diode chip for backlight unit 7, bottom
The chip sintered on portion's metal-insulator substrate 5 be lower half-bridge switch chip 8 and lower half-bridge diode chip for backlight unit 9, wherein, upper half-bridge is opened
Close chip 6 to set with the lower lamination of half-bridge diode chip for backlight unit 9, upper half-bridge diode chip for backlight unit 7 is set with the lower lamination of half-bridge switch chip 8
Put.
Embodiment 6：
The present embodiment and the structure of embodiment 1 are essentially identical, and difference is：
Top metal insulated substrate 4 is set with the lamination of bottom metal insulated substrate 5, top metal insulated substrate 4 and bottom
The chip being provided between metal-insulator substrate 5 in chip, the present embodiment is positioned only at top metal insulated substrate 4, bottom metal
On the one of substrate of insulated substrate 5, the radiating merely for convenience of two substrates, positive pole power terminal 1, negative pole are set herein
Power terminal 2, power output terminal 3 are electrically connected with chip；Positive pole power terminal 1, negative pole power terminal 2, power output end
Son 3 and drive terminal 10 are drawn between top metal insulated substrate 4 and bottom metal insulated substrate 5.
It the above is only the preferred embodiment of the present invention, it should be pointed out that：Come for those skilled in the art
Say, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of power model provided with two-side radiation device, it is characterised in that including power model and be arranged on power model
The heat abstractor (12) of lower surface and the multiple heat pipes (13) for being arranged on power model upper surface, heat abstractor (12) are provided with
Heat pipe insert port (121), heat pipe (13) includes evaporator section (131), edge downward bending of the evaporator section (131) in power model
Linkage section (132) is formed, the heat pipe insert port (121) of linkage section (132) insertion heat abstractor (12) is simultaneously fixed.
2. a kind of power model provided with two-side radiation device according to claim 1, it is characterised in that the power mould
Block includes drive terminal (10), and drive terminal (10) is connected with driving plate (11), and the driving plate (11) is between power model
Provided with heat pipe (13).
3. a kind of power model provided with two-side radiation device according to claim 1, it is characterised in that the power mould
Block also include positive pole power terminal (1), negative pole power terminal (2), power output terminal (3), top metal insulated substrate (4) with
And bottom metal insulated substrate (5), the top metal insulated substrate (4) and the setting of bottom metal insulated substrate (5) lamination, top
Chip, positive pole power terminal (1), negative pole power end are provided between portion's metal-insulator substrate (4) and bottom metal insulated substrate (5)
Sub (2), power output terminal (3) are electrically connected with chip.
4. a kind of power model provided with two-side radiation device according to claim 3, it is characterised in that the top-gold
Sintering has chip on the two relative face for category insulated substrate (4) and bottom metal insulated substrate (5).
5. a kind of power model provided with two-side radiation device according to claim 4, it is characterised in that also including plastic packaging
Shell (15), the evaporator section (131) of the heat pipe (13) is sintered on top metal insulated substrate (4)；The evaporator section (131)
It is wrapped in plastic shell (15)；Or, the evaporator section (131) is exposed at plastic shell (15) outside, and plastic shell
(15) by the center section of top metal insulated substrate (4) upper surface and the pars intermedia of bottom metal insulated substrate (5) lower surface
It is point exposed outside.
6. a kind of power model provided with two-side radiation device according to claim 4, it is characterised in that the output work
Rate terminal (3) includes weld part (31) and the connecting portion (32) on the outside of plastic shell (15), and the weld part (31) is located at
Between the chip sintered on the chip and bottom metal insulated substrate (5) sintered on top metal insulated substrate (4).
7. a kind of power model provided with two-side radiation device according to claim 4, it is characterised in that the bottom gold
Belong to insulated substrate (5) lower surface and be provided with turbulence structure (52), the upper surface of the heat abstractor (12) is provided with flow-disturbing hole (122),
The turbulence structure (52) is stretched into heat abstractor (12) inside by flow-disturbing hole (122) and sealed at flow-disturbing hole (122) mouth,
The heat exchanger channels of heat abstractor (12) Inner Constitution heat eliminating medium.
8. a kind of power model provided with two-side radiation device according to claim 7, it is characterised in that the flow-disturbing knot
The cylindric pin-fin that structure (52) is arranged for fork.
9. a kind of power model provided with two-side radiation device according to claim 4, it is characterised in that the positive pole work(
Rate terminal (1) is electrically connected with the chip on bottom metal insulated substrate (5), negative pole power terminal (2) and top metal insulation base
Chip electrical connection on plate (4)；The chip sintered on top metal insulated substrate (4) is lower half-bridge switch chip (8) and lower half
The chip sintered on bridge diode chip for backlight unit (9), bottom metal insulated substrate (5) is upper half-bridge switch chip (6) and upper half-bridge two
Pole pipe chip (7)；Wherein, upper half-bridge switch chip (6) is set with lower half-bridge diode chip for backlight unit (9) lamination, lower half-bridge switch core
Piece (8) is set with upper half-bridge diode chip for backlight unit (7) lamination.
10. a kind of power model provided with two-side radiation device according to claim 4, it is characterised in that the positive pole
Power terminal (1) and negative pole power terminal (2) are electrically connected with top metal insulated substrate (4) and bottom metal insulated substrate (5)
Connect, the chip sintered on the top metal insulated substrate (4) is lower half-bridge diode chip for backlight unit (9) and upper half-bridge diode chip for backlight unit
(7) chip, sintered on bottom metal insulated substrate (5) be lower half-bridge switch chip (8) and upper half-bridge switch chip (6), its
In, lower half-bridge diode chip for backlight unit (9) is set with lower half-bridge switch chip (8) lamination, upper half-bridge diode chip for backlight unit (7) and upper half-bridge
Switch chip (6) lamination is set；
Or, the chip sintered on top metal insulated substrate (4) is upper half-bridge switch chip (6) and upper half-bridge diode chip for backlight unit
(7) chip, sintered on bottom metal insulated substrate (5) be lower half-bridge switch chip (8) and lower half-bridge diode chip for backlight unit (9),
Wherein, upper half-bridge switch chip (6) is set with lower half-bridge diode chip for backlight unit (9) lamination, upper half-bridge diode chip for backlight unit (7) and lower half
Bridge switch chip (8) lamination is set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710454375.9A CN107195599A (en) | 2017-06-14 | 2017-06-14 | A kind of power model provided with two-side radiation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710454375.9A CN107195599A (en) | 2017-06-14 | 2017-06-14 | A kind of power model provided with two-side radiation device |
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| CN107195599A true CN107195599A (en) | 2017-09-22 |
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| JP2006134990A (en) * | 2004-11-04 | 2006-05-25 | Fuji Electric Holdings Co Ltd | Semiconductor apparatus |
| US20080224303A1 (en) * | 2006-10-18 | 2008-09-18 | Sunao Funakoshi | Power Semiconductor Module |
| CN201878467U (en) * | 2010-12-07 | 2011-06-22 | 天津市领航科技发展有限公司 | Controller structure of electromobile |
| US20160351468A1 (en) * | 2015-05-28 | 2016-12-01 | Ut-Battelle, Llc | Integrated packaging of multiple double sided cooling planar bond power modules |
| CN207165544U (en) * | 2017-06-14 | 2018-03-30 | 扬州国扬电子有限公司 | A kind of power model provided with two-side radiation device |
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2017
- 2017-06-14 CN CN201710454375.9A patent/CN107195599A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006134990A (en) * | 2004-11-04 | 2006-05-25 | Fuji Electric Holdings Co Ltd | Semiconductor apparatus |
| US20080224303A1 (en) * | 2006-10-18 | 2008-09-18 | Sunao Funakoshi | Power Semiconductor Module |
| CN201878467U (en) * | 2010-12-07 | 2011-06-22 | 天津市领航科技发展有限公司 | Controller structure of electromobile |
| US20160351468A1 (en) * | 2015-05-28 | 2016-12-01 | Ut-Battelle, Llc | Integrated packaging of multiple double sided cooling planar bond power modules |
| CN207165544U (en) * | 2017-06-14 | 2018-03-30 | 扬州国扬电子有限公司 | A kind of power model provided with two-side radiation device |
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Application publication date: 20170922 |