CN107195537A - A kind of cleaning method of monocrystalline silicon buffing sheet - Google Patents
A kind of cleaning method of monocrystalline silicon buffing sheet Download PDFInfo
- Publication number
- CN107195537A CN107195537A CN201710525976.4A CN201710525976A CN107195537A CN 107195537 A CN107195537 A CN 107195537A CN 201710525976 A CN201710525976 A CN 201710525976A CN 107195537 A CN107195537 A CN 107195537A
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- CN
- China
- Prior art keywords
- monocrystalline silicon
- basket
- reviewing
- piece
- piece basket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 74
- 238000004140 cleaning Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000005520 cutting process Methods 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000005406 washing Methods 0.000 claims 1
- 238000005192 partition Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710525976.4A CN107195537B (en) | 2017-06-30 | 2017-06-30 | cleaning method of monocrystalline silicon polished wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710525976.4A CN107195537B (en) | 2017-06-30 | 2017-06-30 | cleaning method of monocrystalline silicon polished wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107195537A true CN107195537A (en) | 2017-09-22 |
CN107195537B CN107195537B (en) | 2019-12-17 |
Family
ID=59881707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710525976.4A Active CN107195537B (en) | 2017-06-30 | 2017-06-30 | cleaning method of monocrystalline silicon polished wafer |
Country Status (1)
Country | Link |
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CN (1) | CN107195537B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202428315U (en) * | 2012-01-10 | 2012-09-12 | 青岛嘉星晶电科技股份有限公司 | Ultrasonic cleaning device |
CN204897479U (en) * | 2015-08-25 | 2015-12-23 | 广东思绿环保工程有限公司 | Reliable and stable formula ultraviolet disinfection equipment module system that inserts to one side |
CN106449475A (en) * | 2016-09-29 | 2017-02-22 | 无锡宏纳科技有限公司 | Import structure for wafers |
-
2017
- 2017-06-30 CN CN201710525976.4A patent/CN107195537B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202428315U (en) * | 2012-01-10 | 2012-09-12 | 青岛嘉星晶电科技股份有限公司 | Ultrasonic cleaning device |
CN204897479U (en) * | 2015-08-25 | 2015-12-23 | 广东思绿环保工程有限公司 | Reliable and stable formula ultraviolet disinfection equipment module system that inserts to one side |
CN106449475A (en) * | 2016-09-29 | 2017-02-22 | 无锡宏纳科技有限公司 | Import structure for wafers |
Also Published As
Publication number | Publication date |
---|---|
CN107195537B (en) | 2019-12-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191219 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring road No. 12 in Haitai) Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |