CN107181165A - Wafer level individual laser package structure and manufacture method - Google Patents
Wafer level individual laser package structure and manufacture method Download PDFInfo
- Publication number
- CN107181165A CN107181165A CN201710489113.6A CN201710489113A CN107181165A CN 107181165 A CN107181165 A CN 107181165A CN 201710489113 A CN201710489113 A CN 201710489113A CN 107181165 A CN107181165 A CN 107181165A
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- China
- Prior art keywords
- chip
- carrier disk
- pipe cap
- wafer level
- package structure
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a kind of wafer level individual laser package structure and manufacture method, the wafer level individual laser package structure includes base and the pipe cap component above base, the base is formed with least one groove for being used to carry chip close to the upper surface of pipe cap component, the non-recessed region of the upper surface is used to carry predetermined non-chip device, these chips and non-chip device are attached by way of wire bonding, the lead is connected to the upper end of the conducting post for the lower surface that base is through to from the upper surface of base, to be electrically connected with the soldered ball that the lower end of conducting post is set.The present invention can reduce the overall volume of laser, simplify its internal structure, and manufacture processing is simple, can improve production efficiency, reduce production cost.
Description
Technical field
The invention belongs to technical field of semiconductor encapsulation, especially a kind of wafer level individual laser package structure and manufacturer
Method.
Background technology
With the development of semiconductor technology, the manufacturing technology of laser is showing improvement or progress day by day, and laser is used as a kind of optic communication
Light source, is the general perfect light source of information transfer carrier in current high speed fibre transmission network both at home and abroad.Extensively should at present
For modern science and technology, national defence and industrial or agricultural field.
Now the more commonly used individual laser package mode is totally enclosed type (English in the application：Transistor Outline
Or Through-hole, referred to as：TO) encapsulation technology, TO encapsulation technologies difficulty in encapsulation manufacture processing is big, and internal structure is multiple
It is miscellaneous, and inner vacuum environment need to add getter, production cost is higher, and the encapsulating structure volume after the completion of encapsulation is larger.
The content of the invention
The purpose of the present invention be overcome the shortcomings of above-mentioned TO encapsulation technologies there is provided it is a kind of efficiently, inexpensive wafer level laser
Device encapsulating structure, using groove type structures, channel bottom is placed in by chip, replaces lead using conducting post, reduces laser
Volume.
In order to solve the above-mentioned technical problem, the invention provides following technical scheme：
In a first aspect, the invention provides a kind of wafer level individual laser package structure, the wafer level individual laser package structure
Pipe cap component including base and above base, the base is formed with least one use close to the upper surface of pipe cap component
In the groove of carrying chip, the non-recessed region of the upper surface is used to carry predetermined non-chip device, these chips and non-core
Piece device is attached by way of wire bonding, and the lead is connected to the lower surface that base is through to from the upper surface of base
Conducting post upper end, be electrically connected with the soldered ball set with the lower end of conducting post.
Optionally, pipe cap component includes the lens and the pipe cap positioned at lens periphery positioned at intermediate region, and pipe cap is used for
Corresponding lens are supported, the height of pipe cap is related to the focal length of correspondence lens.
Optionally, the lens use light transmissive material.Optionally, the pipe cap uses light transmissive material.
Optionally, conducting post is at least two, and each conducting post bottom is provided with pad, each pad and welded
There is soldered ball.
Optionally, the quantity of above-mentioned groove is at least two, and said chip at least includes luminescence chip and power adjusting core
Piece, one of groove is used to carry the luminescence chip, and another groove is used to carry the power adjusting chip.
Optionally, the size of chip of the size of groove with being carried matches.
Optionally, above-mentioned non-chip device includes at least one of electro-hot regulator, thermistor and pinboard, and this is led
Electric cylinder bottom is provided with pad, and the ball bond is on the pad.
Second aspect, the present invention also provides a kind of manufacture method of wafer level individual laser package structure, and this method includes：
Processing is carried out in the upper surface of carrier disk and forms groove, and processing is carried out to the carrier disk and is formed from carrier circle
The through hole that piece upper surface to lower surface runs through, fills conductive material in through hole, forms conducting post；Using predetermined bonding method
Chip is affixed into respective slot bottom, non-chip device is affixed to the corresponding position of the carrier disk upper surface non-recessed region
Put；Said chip and non-chip device are attached according to predetermined connected mode by the way of wire bonding, and will connection
Lead afterwards is to the upper end of conducting post；Soldered ball is welded on the pad of the conducting post bottom；Using one-step casting shaping side
Formula obtains at least one pipe cap component comprising lens and pipe cap；Under vacuum by each pipe cap component according to predetermined way
It is bonded in the upper surface of the carrier disk.
Optionally, processing should be carried out in the upper surface of carrier disk and forms groove, the carrier disk carry out processing was formed
The through hole run through from carrier disk upper surface to the lower surface, including：By the upper table for etching or being laser-ablated in carrier disk
Face carries out processing and forms groove, and carrying out processing to the carrier disk by etching or laser ablation forms from the carrier disk upper table
The through hole that face to lower surface runs through.
Optionally, by the modes such as dry etching to the carrier disk carry out processing formed from the carrier disk upper surface to
The through hole that lower surface runs through.
Optionally, conductive material is filled in through hole, conducting post is formed, including：By the way of being electroplated after sputtering pair
Through hole is filled, and obtains conducting post.
Optionally, chip is affixed to by respective slot bottom using predetermined bonding method, non-chip device is affixed to this
The correspondence position of carrier disk upper surface non-recessed region, including：Chip is affixed to by respective slot bottom by conducting resinl, will
Non- chip device affixes to the correspondence position of the carrier disk upper surface non-recessed region.
Optionally, soldered ball is welded on the pad of conducting post bottom, including：By planting ball technique and reflow soldering process
The soldered ball is welded on the pad of each conducting post bottom.
Optionally, under vacuum by each pipe cap component according to predetermined way be bonded in carrier disk upper surface it
Afterwards, this method also includes：In units of single laser, carrier disk is cut by being cut by laser mode.
According to above-mentioned technical proposal, the beneficial effect that the present invention can be realized at least includes：
1st, using light transmissive material, one-step casting shaping obtains pipe cap component, and manufacture difficulty of processing is small, while can drop significantly
Low production cost.
2nd, to the bonding point (including chip and non-chip device) on whole Zhang Zaiti disks, by the way of wire bonding,
One-time positioning, completes whole Zhang Jianhe, improves production efficiency.
3rd, using a kind of efficient packaging technology, i.e. base and pipe cap use on wafer level packaging, disk multiple bases and
The connection of pipe cap is once completed using gluing under vacuum, and its technique is simple, and after the completion of encapsulating structure size compared with
Small, production efficiency is greatly improved.
It should be appreciated that the general description of the above and detailed description hereinafter are only exemplary, this can not be limited
Invention.
Brief description of the drawings
Accompanying drawing herein is merged in specification and constitutes the part of this specification, shows the implementation for meeting the present invention
Example, and for explaining principle of the invention together with specification.
Fig. 1 is a kind of stream of the manufacture method for wafer level individual laser package structure that the present invention is provided in one embodiment
Cheng Tu；
Fig. 2 be a kind of wafer level individual laser package structure of the invention conducting post and etching groove after disk schematic diagram；
Fig. 3 be a kind of wafer level individual laser package structure of the invention attachment after schematic diagram；
Fig. 4 be a kind of wafer level individual laser package structure of the invention non-chip device and chip bonding after the completion of illustrate
Figure；
Fig. 5 is the schematic diagram after a kind of ball bond of wafer level individual laser package structure of the invention；
Fig. 6 is a kind of schematic diagram of the pipe cap component of wafer level individual laser package structure of the invention；
Fig. 7 is that a kind of carrier disk of wafer level individual laser package structure of the invention forms the vertical view signal of each laser
Figure；
Fig. 8 is the pipe cap component and schematic diagram after base assembling of a kind of wafer level individual laser package structure of the invention；
Wherein, 1- grooves；2- conducting posts；3- bases；4- non-recessed region；5- chips；The non-chip devices of 6-；7- draws
Line；8- pads；9- soldered balls；10a- lens；10b- pipe caps；11- lasers；51- luminescence chips；52- power adjusting chips；61-
Electro-hot regulator；62- thermistors；63- pinboards.
Embodiment
Here exemplary embodiment will be illustrated in detail, its example is illustrated in the accompanying drawings.Following description is related to
During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represent same or analogous key element.Following exemplary embodiment
Described in embodiment do not represent and the consistent all embodiments of the present invention.On the contrary, they be only with it is such as appended
The example of the consistent apparatus and method of some aspects be described in detail in claims, the present invention.
Because TO encapsulation volumes are big, complicated and manufacture difficulty of processing is big in correlation technique, packaging cost is difficult to reduce.
This is directed to, is obtained this application provides a kind of manufacture method of wafer level individual laser package structure and according to the manufacture method
Wafer level individual laser package structure.
It is shown in Figure 1, a kind of system for wafer level individual laser package structure that the present invention is provided in one embodiment
The flow chart of method is made, the manufacture method of the wafer level individual laser package structure comprises the following steps：
Step 101, carrier disk upper surface carry out processing formed groove, to the carrier disk carry out processing formed from
The through hole that carrier disk upper surface to the lower surface runs through, fills conductive material in through hole, forms conducting post；
Here carrier disk can be glass or silica-base material.In a kind of possible implementation, in carrier disk
Upper surface carry out processing formed groove when, can using etching or be laser-ablated in carrier disk upper surface carry out processing shape
Into groove.
, can be with when carrying out processing to the carrier disk and forming the through hole run through from carrier disk upper surface to the lower surface
By etch (such as dry etching) or laser ablation the carrier disk is carried out processing formed from the carrier disk upper surface to
The through hole that lower surface runs through.
In actual applications, after above-mentioned through hole is obtained, conductive material can also be further filled in through hole, such as is adopted
Through hole is filled with the mode electroplated after sputtering, conducting post is formed.
By step 101, the upper surface of carrier disk forms groove, and from the upper surface of carrier disk between lower surface
Form through hole, conducting post formed after being filled to through hole, it is shown in Figure 2, the upper surface of carrier disk formed groove 1 and
Conducting post 2 through carrier disk upper surface to lower surface, remaining volume of carrier disk is base 3, carrier disk it is upper
Region beyond surface groove 1 is then non-recessed region 4.
In general, the size of chip of the size of groove with needing to affix to bottom portion of groove matches.Groove can be
At least one, through hole can be at least two.
Optionally, for the base corresponding to a laser, it typically has two conducting posts, and the laser is had
One end of standby wire is connected to the upper end of one of conducting post, and the wire is connected by each chip and non-chip device
It is connected afterwards with the upper end of another conducting post.
Step 102, chip is affixed to by respective slot bottom using predetermined bonding method, non-chip device is affixed to this
The correspondence position of carrier disk upper surface non-recessed region；
In a kind of possible implementation, when chip is affixed into respective slot bottom using predetermined bonding method,
Chip can be affixed to by respective slot bottom by conducting resinl.It is non-non- chip device is affixed into the carrier disk upper surface
During the correspondence position of recess region, non-chip device can be affixed to by the carrier disk upper surface non-recessed region by conducting resinl
The correspondence position in domain.
Carrier disk after adhering chip and non-chip device may refer to shown in Fig. 3, and the carrier disk is formed with two
Being stuck in groove, two grooves has chip 5, and the non-recessed region that carrier disk upper surface is formed is stuck and has non-chip device
Part 6.
Step 103, said chip and non-chip device are carried out according to predetermined connected mode by the way of wire bonding
Connection, and the lead after connection is connected to the upper end of conducting post；
When said chip and non-chip device are attached according to predetermined connected mode by the way of wire bonding,
It can be attached according to the connected mode corresponding to the circuit relationships of chip and non-chip device.
It is shown in Figure 4, each chip and non-chip device are interconnected by lead 7, lead 7 passes through conductive pole
Body 2 and the pad 8 of the bottom of conducting post 2 are electrically connected with.
Step 104, soldered ball is welded on the pad of conducting post bottom；
When welding soldered ball on the pad of each conducting post bottom, it can be existed using plant ball technique and reflow soldering process
The soldered ball is welded on the pad of the through hole bottom.
It is shown in Figure 5, it is welded with soldered ball 9 on the pad 8 of the bottom of conducting post 2.
Step 105, at least one pipe cap component comprising lens and pipe cap is obtained using one-step casting molding mode；
Shown in Figure 6, integrally formed pipe cap component includes lens 10a and pipe cap 10b, and wherein at least lens are
Luminescent material.
Pipe cap is that, for supporting lens, the height of pipe cap is related to the focal length of lens.
Step 106, each pipe cap component is bonded in the upper table of the carrier disk according to predetermined way under vacuum
Face.
Because a carrier disk can obtain the base of multiple lasers by step 101 to step 104, therefore pass through
Step 105 can be directed to the quantity of each laser and the base area of laser, form multiple pipe cap components, then utilize step
Rapid 106, pipe cap component is bonded in carrier disk upper surface corresponding with laser base.
Step 107, in units of single laser, carrier disk is cut by being cut by laser mode.
By above-mentioned steps 101 to step 106, several lasers are formed on carrier disk, then then can be with single
Laser is unit, and carrier disk is cut by way of laser cutting, to obtain each laser.
It is shown in Figure 7, several lasers 11 are formed on the carrier disk, are carried out in units of each laser 11
Cutting, then can obtain each laser 11.
The wafer level individual laser package structure obtained by above-mentioned steps may refer to shown in Fig. 8, the circle being manufactured
Chip level individual laser package structure includes base 3 and the pipe cap component positioned at the top of base 3, and base 3 is upper close to pipe cap component
Surface is formed with the groove that at least one is used to carry chip, and the non-recessed region of the upper surface is used to carry predetermined non-chip
Device, chip and non-chip device are attached by way of lead 7 is bonded, and the lead 7 is connected to the upper surface from base 3
The upper end of the conducting post 2 of the lower surface of base 3 is through to, is electrically connected with the soldered ball 9 set with the lower end of conducting post 2,
Shifted with the signal exit for realizing functional chip.
Further, the quantity of groove is at least two, includes luminescence chip and power adjusting chip, non-core with chip
Piece device is included exemplified by electro-hot regulator, thermistor and pinboard, and shown in Figure 8, luminescence chip 51 is located therein
In one groove, power adjusting chip 52 is located in another groove, electro-hot regulator 61, thermistor 62 and pinboard 63
The non-recessed region of carrier disk upper surface is secured at respectively.
Pipe cap component includes the lens 10a and the pipe cap 10b positioned at lens periphery positioned at intermediate region, and pipe cap 10b is used
In support lens 10a, pipe cap 10b height is related to lens 10a focal length.Optionally, lens 10a uses light transmissive material.
Optionally, conducting post 2 is at least two, and each bottom of conducting post 2 is provided with pad 8, each pad 8
It is welded with soldered ball 9.It should be added that, above-mentioned steps 101 to step 107 can also be according to the selective choosing of actual conditions
Part steps are taken to form new embodiment, such as, step 101 to step 106 can independently form one embodiment.Above-mentioned steps
101 can also adjust tandem to form new embodiment to step 107 according to actual conditions, such as, step 105 can be made
For the either step before step 106, such as it can place before step 101, or to step 104, any two are walked step 101
Between rapid, or can side by side it be performed with any in step 101 to step 104 or several step.
In summary, wafer level individual laser package structure and its manufacture method proposed by the present invention, using light transmissive material, one
Secondary casting obtains pipe cap component, and manufacture difficulty of processing is small, while production cost can be substantially reduced；In addition, being carried to whole
Bonding point (including chip and non-chip device) on body disk, by the way of wire bonding, one-time positioning completes whole Zhang Jian
Close, improve production efficiency；In addition, wafer level packaging is also used using a kind of efficient packaging technology, i.e. base and pipe cap, circle
The connection of multiple bases and pipe cap is once completed using gluing under vacuum on piece, and its technique is simple, and after the completion of envelope
Assembling structure size is smaller, and production efficiency is greatly improved.
Those skilled in the art will readily occur to its of the present invention after the invention that specification and practice are invented here is considered
Its embodiment.The application be intended to the present invention any modification, purposes or adaptations, these modifications, purposes or
Person's adaptations follow the general principle of the present invention and the common knowledge in the art do not invented including the present invention
Or conventional techniques.Description and embodiments are considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the invention is not limited in the precision architecture for being described above and being shown in the drawings, and
And various modifications and changes can be being carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (10)
1. a kind of wafer level individual laser package structure, it is characterised in that the wafer level individual laser package structure include base with
And the pipe cap component above the base, the base close to the upper surface of the pipe cap component be formed with least one use
In the groove of carrying chip, the non-recessed region of the upper surface is used to carry predetermined non-chip device, the chip and institute
State non-chip device to be attached by way of wire bonding, the lead is connected to from the upper surface of the base and is through to
The upper end of the conducting post of the lower surface of the base, to be electrically connected with the soldered ball that the lower end of the conducting post is set.
2. wafer level individual laser package structure according to claim 1, it is characterised in that the pipe cap component includes being located at
The lens of intermediate region and the pipe cap positioned at the lens periphery, the pipe cap are used to support the lens, the pipe cap
Height is related to the focal length of the lens.
3. wafer level individual laser package structure according to claim 2, it is characterised in that the lens use printing opacity material
Material.
4. wafer level individual laser package structure according to claim 2, it is characterised in that the conducting post is at least two
Individual, each conducting post bottom is provided with pad, each pad and is welded with soldered ball.
5. according to any described wafer level individual laser package structure in Claims 1-4, it is characterised in that the groove
Quantity is at least two, and the chip at least includes luminescence chip and power adjusting chip, and one of groove is used to carry institute
Luminescence chip is stated, another groove is used to carry the power adjusting chip；The non-chip device includes electro-hot regulator, heat
At least one of quick resistance and pinboard.
6. a kind of manufacture method of wafer level individual laser package structure, it is characterised in that methods described includes：
Processing is carried out in the upper surface of carrier disk and forms groove, and processing is carried out to the carrier disk and is formed from carrier circle
The through hole that piece upper surface to lower surface runs through, fills conductive material in the through hole, forms conducting post；
Chip is affixed to by respective slot bottom using predetermined bonding method, non-chip device is affixed on the carrier disk
The correspondence position of surface non-recessed region；
The chip and the non-chip device are attached according to predetermined connected mode by the way of wire bonding, and will
Lead after connection is connected to the upper end of the conducting post；
Soldered ball is welded on the pad of the conducting post bottom；
At least one pipe cap component comprising lens and pipe cap is obtained using one-step casting molding mode；
Each pipe cap component is bonded in the upper surface of the carrier disk according to predetermined way under vacuum.
7. method according to claim 6, it is characterised in that the upper surface carry out processing in carrier disk forms recessed
Groove, processing is carried out to the carrier disk and forms the through hole run through from the carrier disk upper surface to lower surface, including：
Processing formation groove is carried out by etching or being laser-ablated in the upper surface of carrier disk, passes through etching or laser ablation pair
The carrier disk carries out processing and forms the through hole run through from the carrier disk upper surface to lower surface.
8. method according to claim 6, it is characterised in that described that chip is affixed to by correspondence using predetermined bonding method
Bottom portion of groove, non-chip device is affixed to the correspondence position of the carrier disk upper surface non-recessed region, including：
The chip is affixed to by respective slot bottom by conducting resinl, the non-chip device is affixed into the carrier disk
The correspondence position of upper surface non-recessed region.
9. method according to claim 6, it is characterised in that described that weldering is welded on the pad of the conducting post bottom
Ball, including：
Soldered ball is welded by planting ball technique and reflow soldering process on the pad of each conducting post bottom.
10. according to any described method in claim 6 to 9, it is characterised in that under vacuum manage each described
Cap assembly is bonded according to predetermined way after the upper surface of the carrier disk, and methods described also includes：
In units of single laser, the carrier disk is cut by being cut by laser mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710489113.6A CN107181165A (en) | 2017-06-24 | 2017-06-24 | Wafer level individual laser package structure and manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710489113.6A CN107181165A (en) | 2017-06-24 | 2017-06-24 | Wafer level individual laser package structure and manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107181165A true CN107181165A (en) | 2017-09-19 |
Family
ID=59845118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710489113.6A Pending CN107181165A (en) | 2017-06-24 | 2017-06-24 | Wafer level individual laser package structure and manufacture method |
Country Status (1)
| Country | Link |
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| CN (1) | CN107181165A (en) |
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| CN110104606A (en) * | 2019-05-08 | 2019-08-09 | 苏州新沃微电子有限公司 | A kind of encapsulating structure of MEMS infrared sensor |
| WO2022247947A1 (en) * | 2021-05-28 | 2022-12-01 | 青岛海信宽带多媒体技术有限公司 | Optical module |
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