JP4183255B2 - LED encapsulation molding method and finished product structure - Google Patents

LED encapsulation molding method and finished product structure Download PDF

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JP4183255B2
JP4183255B2 JP2004138642A JP2004138642A JP4183255B2 JP 4183255 B2 JP4183255 B2 JP 4183255B2 JP 2004138642 A JP2004138642 A JP 2004138642A JP 2004138642 A JP2004138642 A JP 2004138642A JP 4183255 B2 JP4183255 B2 JP 4183255B2
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chip
molding
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frame
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JP2005322736A (en
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程翔 許
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菱生精密工業股▲分▼有限公司
華剛光電零件有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Description

本発明は、光電子半導体に関し、詳しく言えば、ＬＥＤ（Light-Emitting Diode、発光ダイオード）の封入成型方法および完成品の構造に関するものである。   The present invention relates to an optoelectronic semiconductor, and more particularly, to an LED (Light-Emitting Diode) encapsulation molding method and a finished product structure.

伝統的な“Lamp型”ＬＥＤの製造方法は、導電金属でフレーム（frame）を製作し、フレームに若干の平行配列される支持部および支持部を直角交差して連結する連結部を設け、相隣する二つの支持部を二つずつ一組にし、ＬＥＤの正極端子および負極端子を形成し、そのうちの一つの端子（通常、負極端子を指す）の前端に皿状（光線を反射するため）を形成し、次に銀接着剤により皿状の部位内にＬＥＤチップを接合し、チップの一つの電極（ｎ極）を端子に直接接合して接続し、ワイヤボンド器によりチップのもう一つの電極（ｐ極）と互いに間隔を置く他端子（正極端子）前端との間に金材質線を繋ぎ、そして、型わく技術により両端子前端にエポキシ樹脂でチップを被覆する円頂（dome）の封入体を成型し、最後に、端子の間に連結される前述の連結部を裁断することで、一粒のＬＥＤが完成する。   A traditional “Lamp type” LED manufacturing method is a method of manufacturing a frame made of conductive metal, providing a support part arranged in parallel to the frame, and a connecting part for connecting the support parts at right angles. Two adjacent support parts are paired together to form a positive electrode terminal and a negative electrode terminal of the LED, and a dish-like shape (to reflect light) at the front end of one of the terminals (usually indicating the negative electrode terminal) Next, the LED chip is bonded in a dish-shaped portion with silver adhesive, and one electrode (n pole) of the chip is directly bonded and connected to the terminal, and the other of the chip is connected with a wire bonder. Connect the gold material wire between the electrode (p pole) and the front end of the other terminal (positive terminal) spaced from each other, and coat the chip with epoxy resin at the front end of both terminals by patterning technology Mold the inclusion body and finally connect between the terminals By cutting the above-described connecting portion, one LED is completed.

ところが、そのほかの発光装置（蛍光灯または白熱電球）に比較して、ＬＥＤに発生する熱度は極めて低いが、ＬＥＤは電流が半導体を通過することにより発光し、操作電流は数十ミリアンペアから数百ミリアンペアまでであるため、チップが発光すると同時に一定の程度の熱エネルギーが発生する。かつ熱エネルギーは、ＬＥＤを損壊する最大原因である。従って、いかに熱エネルギーを下げるかあるいはいかに放熱効率を上げるのかということが、現今ＬＥＤの研究開発の重点の一つである。上述の周知のＬＥＤは、チップが伝熱効果に劣る封入体（エポキシ樹脂）内に封入され、かつチップと金属端子の接触面積が極めて小さく、端子の封入体の外に突出延伸する部分が細長い棒状を呈するものであるため、放熱効果が極めて劣り、改善する余地がある。
本発明の主な目的は、ＬＥＤの完成品に良好な放熱効果を持たせ、ＬＥＤの使用寿命を延長可能であるＬＥＤの封入成型方法を提供することにある。 However, compared to other light-emitting devices (fluorescent lamps or incandescent lamps), the heat generated in the LEDs is extremely low, but the LEDs emit light when the current passes through the semiconductor, and the operating current ranges from several tens of milliamps to several hundreds. Since it is up to milliampere, a certain degree of thermal energy is generated at the same time as the chip emits light. And thermal energy is the biggest cause of LED damage. Therefore, how to lower the thermal energy or how to increase the heat dissipation efficiency is one of the important points of LED research and development. In the known LED described above, the chip is enclosed in an encapsulant (epoxy resin) that is inferior in heat transfer effect, the contact area between the chip and the metal terminal is extremely small, and the portion that protrudes and extends out of the terminal encapsulant is elongated. Since it has a rod shape, the heat dissipation effect is extremely poor and there is room for improvement.
The main object of the present invention is to provide a method for encapsulating and molding an LED, which can give a good heat dissipation effect to the finished LED and can extend the service life of the LED.

上述の目的を達成するために、本発明によるＬＥＤの封入成型方法は、下記のステップを含む。ステップａは、導電金属で板状フレームを製作し、フレームに若干の成型区域を設け、各成型区域の中に主片および分割アームを設け、主片と分割アームが互いに連結されず、その間は隙間を有することである。ステップｂは、板状フレームの各主片の最上面にそれぞれＬＥＤチップを接合し、チップ底面の電極と主片を電気的に接続し、かつ型わく成型技術により主片の上に反射リングを成型し、反射リングは透過性のない白いプラスチックから形成され、内周面に上向きの斜面を有し、またチップを反射リングの中央に位置させることである。ステップｃは、ワイヤボンド器によりチップの最上面のもう一つの電極と分割アームの最上面との間に導線を繋ぐことである。ステップｄは、型わく成型技術によりエポキシ樹脂で板状フレームの各成型区域に封入体を成型し、封入体によりチップ、反射リングおよび導線を封入し、かつ封入体の底部により主片および分割アームを被覆し、その間の隙間に填めることで、主片と分割アームの相対的な関係を維持し、また、封入体の最上部を円頂に形成することである。ステップｅは、板状フレームの成型区域の寸法に従って裁断することで、若干のＬＥＤが完成することである。   To achieve the above object, a method for encapsulating an LED according to the present invention includes the following steps. In step a, a plate-like frame is made of a conductive metal, a few molding areas are provided in the frame, a main piece and a split arm are provided in each molding area, and the main piece and the split arm are not connected to each other. It is to have a gap. In step b, the LED chip is bonded to the uppermost surface of each main piece of the plate-like frame, the electrode on the bottom surface of the chip is electrically connected to the main piece, and a reflection ring is formed on the main piece by a mold forming technique. Molded, the reflective ring is made of a non-transparent white plastic, has an upward slope on the inner peripheral surface, and the tip is located in the center of the reflective ring. Step c is to connect a lead wire between another electrode on the top surface of the chip and the top surface of the split arm by a wire bonder. In step d, an encapsulant is molded in each molding area of the plate-shaped frame with epoxy resin by a mold molding technique, the chip, the reflective ring and the conductor are encapsulated by the encapsulant, and the main piece and the split arm are encapsulated by the bottom of the encapsulant Is covered and the gap between them is filled, so that the relative relationship between the main piece and the split arm is maintained, and the uppermost part of the enclosure is formed at the top of the circle. Step e is to complete some LEDs by cutting according to the dimensions of the molding area of the plate frame.

以下、本発明の実施例を図面に基づいて説明する。
本発明の一実施例による白色ＬＥＤの封入成型方法（注、本発明の製造方法および完成品は白色ＬＥＤに限らない）は、図１のプロセスに示すように、板状フレームを設置するステップと、チップを接合するステップと、反射リングを成型するステップと、ワイヤボンドのステップと、封入体を成型するステップと、裁断のステップとの六つを含む。以下、図面に基づいて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
The method for encapsulating a white LED according to an embodiment of the present invention (note that the manufacturing method and the finished product of the present invention are not limited to a white LED) includes a step of installing a plate-like frame as shown in the process of FIG. , Including a step of bonding a chip, a step of forming a reflection ring, a step of wire bonding, a step of forming an enclosure, and a step of cutting. Hereinafter, description will be given based on the drawings.

ステップ１は、図２および図３に示すように、まず導電金属（一般に銅を使用する）で板状フレーム１０を製作する。フレーム１０は矩形を呈し、板面の上に空洞行列の窓を呈する若干の成型区域１１を有し、各成型区域１１は行列状に配列される。つまり、板状フレーム１０の板面の左右両側および上下両側には成型区域１１を取り囲む縦向き辺部１２および横向き辺部１３が形成される。かつ各成型区域１１は若干の（辺部１２および辺部１３と連結される）縦向き分割リブ１４および横向き分割リブ１５により分割され、全ての成型区域１１内部の空洞形状が同じである。つまり、成型区域１１は中央部位に矩形の主片１６を有し、成型区域1１内部は上下両側の中間位置に主片１６および横向き分割リブ１５（または横向き辺部１３）を同時に連結する連結アーム１７を有し、成型区域1１内部は右側の中央位置に主片１６および縦向き分割リブ１４（または縦向き辺部１２）を同時に連結する突出延伸アーム１８を有し、そして向かい合う側、即ち、成型区域１１内部は左側の中央位置に縦向き分割リブ１４（または縦向き辺部１２）と連結され、主片１６との間に適当な間隔を置く分割アーム１９を有する。   In step 1, as shown in FIGS. 2 and 3, first, a plate-like frame 10 is made of a conductive metal (generally using copper). The frame 10 has a rectangular shape and has a number of molding areas 11 on the plate surface that exhibit a hollow matrix window, and the molding areas 11 are arranged in a matrix. That is, the vertical side portion 12 and the horizontal side portion 13 surrounding the molding area 11 are formed on the left and right sides and the upper and lower sides of the plate surface of the plate-like frame 10. Each molding area 11 is divided by some longitudinally divided ribs 14 and laterally divided ribs 15 (connected to the side parts 12 and the side parts 13), and the cavity shapes in all the molding areas 11 are the same. In other words, the molding area 11 has a rectangular main piece 16 at the central portion, and the inside of the molding area 11 is a connecting arm that simultaneously connects the main piece 16 and the laterally divided ribs 15 (or the lateral side portions 13) at intermediate positions on the upper and lower sides. 17 has a projecting extending arm 18 which simultaneously connects the main piece 16 and the longitudinal dividing rib 14 (or the longitudinal side 12) at the center position on the right side, and the opposite side, i.e. The inside of the molding area 11 is connected to the vertical dividing rib 14 (or the vertical side portion 12) at the center position on the left side, and has a dividing arm 19 that is appropriately spaced from the main piece 16.

ステップ２は、図４および図５に示すように、板状フレーム１０の各主片１６最上面にそれぞれ銀接着剤により白色ＬＥＤのチップ２０（ＬＥＤチップは周知の技術によるものであり、チップの構造および発光原理は本発明の重点ではないため、説明を省き、また、チップ接合（die bon）の技術も周知の技術である）を接合する。各チップ２０は、底面が主片１６最上面に平坦に接合されることで、チップ２０底面の電極が金属主片１６に（導電の銀接着剤を介して）直接接合されて電気的に接続される。   As shown in FIG. 4 and FIG. 5, the step 2 is a white LED chip 20 (LED chip is formed by a well-known technique, using silver adhesive on the uppermost surface of each main piece 16 of the plate frame 10. Since the structure and the light emission principle are not the focus of the present invention, the description is omitted, and the technique of die bonding is also a well-known technique. Each chip 20 has a bottom surface that is flatly bonded to the uppermost surface of the main piece 16 so that an electrode on the bottom surface of the chip 20 is directly bonded to the metal main piece 16 (via a conductive silver adhesive) and is electrically connected. Is done.

ステップ３は、図６および図７に示すように、型わく成型（射出成型）技術によりプラスチック原料で板状フレーム１０の各主片１６最上面に主片の上に接合される反射リング３０を成型する。各反射リング３０はチップ２０の外周を取り囲み、軸方向の高度がほぼチップ２０の高度に等しく、その内周面３１が上向きの４５°斜面（図７）を呈することで、中間のチップ２０の放射する光線を上向きに屈折させ、そして、反射リング３０そのものの材質は透過性のない白色材質である。また、生産実務上の型わく作業を簡易にするために、本実施例における反射リング３０は縦向き連結関係がある。つまり、同一縦列の相隣する二つの反射リング３０の間に連結部３２を有し、連結部３２は板状フレーム１０の連結アーム１７の上に接合される。説明すべきなのは、実務上の“反射リング成型”と前述の“チップ接合”の二つの作業が順番に関わらず、言い換えれば、先に板状フレーム１０上に型わく成型により反射リング３０を成型し、そののち反射リング３０内にそれぞれチップ２０を結合しても構わないということである。   In step 3, as shown in FIGS. 6 and 7, a reflective ring 30 joined to the top of each main piece 16 of the plate-like frame 10 with a plastic raw material by a mold molding (injection molding) technique is used. Mold. Each reflecting ring 30 surrounds the outer periphery of the chip 20, the height in the axial direction is substantially equal to the height of the chip 20, and the inner peripheral surface 31 exhibits an upward 45 ° slope (FIG. 7), so that the intermediate chip 20 The radiating light beam is refracted upward, and the material of the reflecting ring 30 itself is a non-transmissive white material. Further, in order to simplify the forming work in production practice, the reflecting ring 30 in the present embodiment has a vertically connected relationship. In other words, the connecting portion 32 is provided between two adjacent reflective rings 30 in the same column, and the connecting portion 32 is joined onto the connecting arm 17 of the plate frame 10. What should be explained is that the two operations of “reflecting ring molding” in practice and the above-mentioned “chip joining” are not related to the order, in other words, the reflecting ring 30 is first molded on the plate-like frame 10 by molding. Then, the chip 20 may be coupled to the reflecting ring 30 after that.

ステップ４は、図８および図９に示すように、ワイヤボンド器により各チップ２０最上面と成型区域１１内の分割アーム１９最上面との間に金材質（９９％Ａｕ）導線４０（注、ワイヤボンド（wire bond）技術も周知の技術）を繋ぐことで、チップ２０最上面のもう一つの電極と分割アーム１９を電気的に接続する。   As shown in FIGS. 8 and 9, step 4 is performed by using a wire bonder between the uppermost surface of each chip 20 and the uppermost surface of the split arm 19 in the molding area 11 to make a gold material (99% Au) conductor 40 (Note, By connecting a wire bond technique (also known as a wire bond technique), the other electrode on the uppermost surface of the chip 20 and the split arm 19 are electrically connected.

ステップ５は、図１０および図１１に示すように、型わく成型技術によりエポキシ樹脂（Epoxy）で板状フレーム１０の各成型区域１１に封入体５０を成型する。封入体５０は成型区域１１に対応する矩形基部５１を有し、基部５１は成型区域１１内部の本来空いている空間に填まり、かつ最上側が所定の厚さで板状フレーム１０の最上面を被覆する（注、すべての封入体５０の基部は一緒に連結されているため、成型区域１１内の主片１６と、連結アーム１７と、突出延伸アーム１８と、分割アーム１９とを被覆するだけでなく、板状フレーム１０の分割リブ１４および分割リブ１５の上をも被覆する）。本実施例では、基部５１は板状フレーム１０最上面の高度、即ち、ほぼ反射リング３０の高度を超え、各封入体５０は矩形基部５１上方に半球形の突起部５２が一体成型されるものであるため、成型区域１１上のチップ２０、反射リング３０および導線４０を確実に被覆することで、チップ２０等の機械構造を保持し、水分侵入を防止することができ、かつ封入体５０そのものの材質が透過率に優れる透明材質であるため、チップ２０の放射する光線は反射リング３０内周面３１を経由して突起部５２最上端の球面に屈折することができる。また、封入体５０は、絶縁効果を有する。   In step 5, as shown in FIGS. 10 and 11, the encapsulant 50 is molded in each molding area 11 of the plate-like frame 10 with epoxy resin (Epoxy) by a mold molding technique. The enclosure 50 has a rectangular base 51 corresponding to the molding area 11, and the base 51 fills an originally vacant space inside the molding area 11, and the uppermost side covers the uppermost surface of the plate frame 10 with a predetermined thickness. (Note, since the bases of all the inclusions 50 are connected together, only the main piece 16, the connecting arm 17, the protruding extending arm 18 and the split arm 19 in the molding area 11 are covered. In addition, the upper surface of the split ribs 14 and the split ribs 15 of the plate-like frame 10 is also covered). In this embodiment, the base 51 exceeds the height of the uppermost surface of the plate-like frame 10, that is, substantially the height of the reflection ring 30, and each enclosure 50 has a hemispherical protrusion 52 integrally formed above the rectangular base 51. Therefore, by covering the chip 20, the reflection ring 30 and the conductive wire 40 on the molding area 11 with certainty, the mechanical structure of the chip 20 and the like can be maintained, moisture intrusion can be prevented, and the enclosure 50 itself Therefore, the light beam emitted from the tip 20 can be refracted to the spherical surface at the uppermost end of the protrusion 52 via the inner peripheral surface 31 of the reflection ring 30. Further, the enclosure 50 has an insulating effect.

ステップ６は、板状フレーム１０の成型区域１１の寸法（それよりやや小さい寸法）に従って裁断する（即ち、フレーム１０の辺部１２、辺部１３、分割リブ１４および分割リブ１５をすべて裁断する）ことで、図１２に示すように、若干のＬＥＤ６０が完成する。   Step 6 cuts according to the dimension (slightly smaller dimension) of the molding area 11 of the plate-like frame 10 (that is, the side 12, the side 13, the dividing rib 14 and the dividing rib 15 of the frame 10 are all cut). Thus, as shown in FIG. 12, some LEDs 60 are completed.

図１１および図１２に示すように、上述の製造方法により製作されるＬＥＤ６０の構造は、第一端子７０と、第二端子８０と、ＬＥＤチップ２０と、反射リング３０と、導線４０と、封入体５０とを備える。第一端子７０は、前記主片１６と、主片１６右側に連結される突出延伸アーム１８と、それぞれ主片１６上下両側に連結される二つの連結アーム１７とから構成され、材質が導電金属である。第二端子８０、即ち、前記分割アーム１９は、第一端子７０の左側に位置し、かつ第一端子との間に適当な間隔を置き、材質が第一端子７０と同じ導電金属である。ＬＥＤチップ２０は、底面により第一端子７０の主片１６最上面に平坦に接合されることで、チップ２０底面の電極と第一端子７０が電気的に接続される。反射リング３０は、型わく成型技術により第一端子７０の主片１６最上面に成型され、チップ２０外周を取り囲み、かつその内周面が上向きの斜面を呈し、材質が不透明の白色プラスチックである。導線４０は、チップ２０最上面のもう一つの電極と第二端子８０最上面との間に接続される。封入体５０は、透過率が極めて高くて絶縁するエポキシを材質にし、チップ２０、反射リング３０および導線４０を封入し、かつ封入体５０底部（即ち、基部５１）により第一端子７０および第二端子８０の最上面を被覆し、その間の隙間に填まることで、端子７０と端子８０の相対的な関係を維持し、また、封入体５０最上部が円頂（即ち、突起部５３）に形成される。使用時に、端子７０と端子８０を正負電極（極性の区別はチップ２０形式により違い、一般的に、第一端子７０を陽極にし、第二端子８０を陰極にする）に接続することで、電流はＬＥＤチップ２０を通過し、チップは白光を放射し、屈折リング３０内周面３１を経由して封入体５０最上端の球面に屈折させる。   As shown in FIGS. 11 and 12, the structure of the LED 60 manufactured by the above-described manufacturing method includes the first terminal 70, the second terminal 80, the LED chip 20, the reflection ring 30, the conductive wire 40, and the encapsulation. A body 50. The first terminal 70 includes the main piece 16, a protruding extending arm 18 connected to the right side of the main piece 16, and two connecting arms 17 connected to both the upper and lower sides of the main piece 16, and the material is a conductive metal. It is. The second terminal 80, that is, the split arm 19, is located on the left side of the first terminal 70, has an appropriate interval between the first terminal, and is made of the same conductive metal as the first terminal 70. The LED chip 20 is flatly bonded to the uppermost surface of the main piece 16 of the first terminal 70 by the bottom surface, whereby the electrode on the bottom surface of the chip 20 and the first terminal 70 are electrically connected. The reflection ring 30 is molded on the uppermost surface of the main piece 16 of the first terminal 70 by a mold molding technique, surrounds the outer periphery of the chip 20, and the inner peripheral surface thereof has an upward slope, and the material is opaque white plastic. . The conducting wire 40 is connected between another electrode on the top surface of the chip 20 and the top surface of the second terminal 80. The encapsulating body 50 is made of an insulating epoxy having a very high transmittance, encapsulates the chip 20, the reflective ring 30 and the conductive wire 40, and the first terminal 70 and the second terminal 50 by the bottom of the enclosing body 50 (ie, the base 51). By covering the uppermost surface of the terminal 80 and filling the gap between them, the relative relationship between the terminal 70 and the terminal 80 is maintained, and the uppermost portion of the enclosure 50 is rounded (that is, the protrusion 53). It is formed. In use, the terminal 70 and the terminal 80 are connected to positive and negative electrodes (the polarity is different depending on the chip 20 type, and generally the first terminal 70 is an anode and the second terminal 80 is a cathode). Passes through the LED chip 20, and the chip emits white light and is refracted to the spherical surface at the uppermost end of the enclosure 50 through the inner peripheral surface 31 of the refraction ring 30.

上述の説明より、本実施例の製造方法により製作されるＬＥＤ６０は、ＬＥＤチップ２０が金属材質の主片１６最上面に平坦に接合されるため、接触面積が比較的大きく、かつ主片１６（正確に言うと、第一端子７０）そのものは大面積の板片で、その底面が外に完全に露出するため、ＬＥＤ６０を使用する時、チップ２０に発生する熱エネルギーは第一端子７０に速く伝導され、端子７０底面を介して外界に放熱されることで、本実施例により製作されるＬＥＤ６０は良好な放熱効率を有し、使用寿命が比較的長い。   From the above description, the LED 60 manufactured by the manufacturing method of the present embodiment has a relatively large contact area because the LED chip 20 is flatly bonded to the uppermost surface of the main piece 16 made of metal, and the main piece 16 ( To be precise, the first terminal 70) itself is a large-area plate piece, and its bottom surface is completely exposed to the outside. Therefore, when the LED 60 is used, the thermal energy generated in the chip 20 is faster to the first terminal 70. By being conducted and dissipating heat to the outside through the bottom surface of the terminal 70, the LED 60 manufactured according to the present embodiment has good heat dissipation efficiency and has a relatively long service life.

本発明の一実施例によるＬＥＤの封入成型方法のプロセスを示す図である。It is a figure which shows the process of the enclosure molding method of LED by one Example of this invention. 本発明の一実施例によるＬＥＤの封入成型方法の第一ステップの半製品を示す斜視図である。It is a perspective view which shows the semi-finished product of the 1st step of the encapsulation molding method of LED by one Example of this invention. 図２を３−３線で切断した断面図である。It is sectional drawing which cut | disconnected FIG. 2 by the 3-3 line. 本発明の一実施例によるＬＥＤの封入成型方法の第二ステップの半製品を示す斜視図である。It is a perspective view which shows the semi-finished product of the 2nd step of the enclosure molding method of LED by one Example of this invention. 図４を５−５線で切断した断面図である。FIG. 5 is a cross-sectional view of FIG. 4 taken along line 5-5. 本発明の一実施例によるＬＥＤの封入成型方法の第三ステップの半製品を示す斜視図である。It is a perspective view which shows the semi-finished product of the 3rd step of the encapsulation molding method of LED by one Example of this invention. 図６を７−７線で切断した断面図である。FIG. 7 is a cross-sectional view of FIG. 6 taken along line 7-7. 本発明の一実施例によるＬＥＤの封入成型方法の第四ステップの半製品を示す斜視図である。It is a perspective view which shows the semi-finished product of the 4th step of the encapsulation molding method of LED by one Example of this invention. 図８を９−９線で切断した断面図である。It is sectional drawing which cut | disconnected FIG. 8 by the 9-9 line. 本発明の一実施例によるＬＥＤの封入成型方法の第五ステップの半製品を示す斜視図である。It is a perspective view which shows the semi-finished product of the 5th step of the enclosure molding method of LED by one Example of this invention. 図４を１１−１１線で切断した断面図である。It is sectional drawing which cut | disconnected FIG. 4 by the 11-11 line. 本発明の一実施例によるＬＥＤの封入成型方法により製作される単一ＬＥＤを示す模式図である。It is a schematic diagram which shows the single LED manufactured by the encapsulation molding method of LED by one Example of this invention.

符号の説明Explanation of symbols

１０ 板状フレーム、１１ 成型区域、１２ 縦向き辺部、１３ 横向き辺部、１４ 縦向き分割リブ、１５ 横向き分割リブ、１６ 主片、１７ 連結アーム、１８ 突出延伸アーム、１９ 分割アーム、２０ チップ、３０ 反射リング、３１ 内周面、３２ 連結部、４０ 導線、５０ 封入体、５１ 基部、５２ 突起部、６０ ＬＥＤ、７０ 第一端子、８０ 第二端子   DESCRIPTION OF SYMBOLS 10 Plate frame, 11 Molding area, 12 Vertical side part, 13 Horizontal side part, 14 Vertical division rib, 15 Horizontal division rib, 16 Main piece, 17 Connection arm, 18 Protruding extension arm, 19 Division arm, 20 Chip , 30 Reflective ring, 31 Inner peripheral surface, 32 Connecting portion, 40 Conductor, 50 Enclosure, 51 Base portion, 52 Protruding portion, 60 LED, 70 First terminal, 80 Second terminal

Claims (4)

導電金属で板状フレームを製作し、フレームに若干の成型区域を設け、各成型区域の中に主片および分割アームを設け、主片と分割アームは互いに連結されずその間に隙間を形成するステップａと、
板状フレームの各主片の最上面にそれぞれＬＥＤチップを接合し、チップ底面の電極と主片を電気的に接続し、かつ型わく成型技術により主片の上に反射リングを成型し、反射リングは不透明の白いプラスチックから形成され、内周面に上向きの斜面を有し、チップを反射リングの中央に位置させるステップｂと、
ワイヤボンド器によりチップ最上面のもう一つの電極と分割アーム最上面との間に導線を繋ぐステップｃと、
型わく成型技術によりエポキシ樹脂で板状フレームの各成型区域に封入体を成型し、封入体によりチップ、反射リングおよび導線を封入し、かつ封入体の底部により主片および分割アームを被覆し、その間の隙間に填めることで主片と分割アームの相対的な関係を維持し、封入体の最上部を円頂に形成するステップｄと、
板状フレームの成型区域寸法に従って裁断し、ＬＥＤを完成させるステップｅとを含み、
ステップａにおいて、板状フレームの各成型区域は行列状に配列され、各成型区域が空洞行列の窓を呈し、各成型区域は中央部位に矩形の主片を有し、主片の向かい合う両側の中間位置にそれぞれ成型区域の辺縁と連接する連結アームを有し、主片の他側の中央位置に成型区域の辺縁と連接する突出延伸アームを有し、前記分割アームは突出延伸アームと向かい合う他側に位置付けられ、
ステップｂにおいて、同一直列の相隣する二つの反射リングの間に連結部を有し、連結部は板状フレームの連結アームの上に接合されることを特徴とするＬＥＤの封入成型方法。 Conductive metals to manufacture a plate-shaped frame is provided with a slight molded section to the frame, the main piece and divided arms into each molding section provided, the split arm main pieces that form a gap therebetween without being connected to each other Step a,
An LED chip is bonded to the top surface of each main piece of the plate frame, the electrodes on the bottom of the chip are electrically connected to the main piece, and a reflection ring is formed on the main piece by a mold forming technique, and reflection is performed. The ring is formed of opaque white plastic, has an upward slope on the inner peripheral surface, and the step b places the tip in the center of the reflective ring;
Connecting a conducting wire between another electrode on the top surface of the chip and the top surface of the split arm by a wire bonder;
Forming an enclosure in each molding area of the plate-like frame with epoxy resin by mold molding technology, encapsulating the chip, reflecting ring and conductor with the enclosure, and covering the main piece and the split arm with the bottom of the enclosure, Maintaining the relative relationship between the main piece and the split arm by filling the gap between them, and forming the uppermost part of the inclusion body at the top of the circle;
Cut according molding area dimensions of the plate-like frame, it viewed including the steps e to complete the LED,
In step a, the molding areas of the plate-like frame are arranged in a matrix, each molding area presents a cavity matrix window, each molding area has a rectangular main piece at the central location, on both sides of the main piece facing each other. Each intermediate position has a connecting arm connected to the edge of the molding area, and has a projecting extension arm connected to the edge of the molding area at the center position on the other side of the main piece. Positioned on the other side facing each other,
In step b, there is provided a connecting portion between two adjacent reflective rings in the same series, and the connecting portion is joined on a connecting arm of a plate-like frame. ステップｂでは、先にチップを接合し、そののち反射リングを成型することを特徴とする請求項１に記載のＬＥＤの封入成型方法。   2. The method of encapsulating and molding an LED according to claim 1, wherein in step b, the chip is first joined, and then the reflection ring is molded. ステップｂにおいて、各チップは白色ＬＥＤチップであることを特徴とする請求項１に記載のＬＥＤの封入成型方法。   2. The LED encapsulating method according to claim 1, wherein each chip is a white LED chip in step b. ステップｂにおいて、反射リングの内周面は４５°で上を向くことを特徴とする請求項１に記載のＬＥＤの封入成型方法。   2. The method of encapsulating and molding an LED according to claim 1, wherein in step b, the inner peripheral surface of the reflecting ring faces upward at 45 degrees.
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