CN107170709B - Method for repairing short circuit of metal layer in display device - Google Patents
Method for repairing short circuit of metal layer in display device Download PDFInfo
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- CN107170709B CN107170709B CN201710413880.9A CN201710413880A CN107170709B CN 107170709 B CN107170709 B CN 107170709B CN 201710413880 A CN201710413880 A CN 201710413880A CN 107170709 B CN107170709 B CN 107170709B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
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Abstract
The embodiment of the invention discloses a method for repairing a short circuit of a metal layer in a display device, which comprises the following steps: forming a first metal layer on the array substrate; forming a dielectric layer on the first metal layer; depositing an initial metal layer on the dielectric layer; forming a light resistance layer on the initial metal layer; exposing and developing to remove part of the photoresist layer; obtaining information of a flaw point of the first metal layer and the initial metal layer; removing the photoresist layer on the defect point; the initial metal layer is etched to form a second metal layer. The invention has the advantage of improving the short circuit of the display device.
Description
Technical Field
The invention relates to the technical field of display, in particular to a method for repairing a short circuit of a metal layer in a display device.
Background
Display devices, such as liquid crystal display devices, are used as display devices for mobile communication devices, PCs, TVs, and the like, because of their advantages such as high display quality, low cost, and portability. Referring to fig. 1 and fig. 2, in the current display device, a first metal layer 120, a dielectric layer 130, and a second metal layer 140 are formed on an array substrate layer by layer, where the first metal layer 120 includes, for example, a scan line and a gate of a thin film transistor; the second metal layer 140 includes, for example, a data line, a source electrode and a drain electrode of a thin film transistor. In the manufacturing process, if there is a conductive particle in the dielectric layer 130 (particle, which is illustrated in fig. 1 and 2 by way of example) or a pinhole (when the particle is removed, a pinhole is generated, and the metal material of the second metal layer flows into the pinhole), the first metal layer 120 and the second metal layer 140 are shorted, and the lcd device is discarded, which increases the cost.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a method for repairing a short circuit of a metal layer in a display device. The short circuit of the display device can be improved.
In order to solve the above technical problem, an embodiment of the present invention provides a method for repairing a short circuit of a metal layer in a display device, including:
forming a first metal layer on the array substrate;
forming a dielectric layer on the first metal layer;
depositing an initial metal layer on the dielectric layer;
forming a light resistance layer on the initial metal layer;
exposing and developing to remove part of the photoresist layer;
obtaining information of a flaw point of the first metal layer and the initial metal layer;
removing the photoresist layer on the defect point;
the initial metal layer is etched to form a second metal layer.
In an embodiment of the present invention, the dielectric layer includes an insulating layer, or the dielectric layer includes an insulating layer and a semiconductor layer.
In one embodiment of the present invention, the photoresist layer on the defect spot is removed by laser.
In an embodiment of the invention, the laser light is emitted from a side of the photoresist layer away from the array substrate.
In an embodiment of the invention, the step of etching the initial metal layer to form the second metal layer specifically includes:
etching the initial metal layer at the defect point;
etching the initial metal layer except the defect points and not covered by the photoresist layer to form a second metal layer.
In an embodiment of the present invention, conductive particle foreign matter exists at the defect point; or an initial metal layer exists at the flaw point, the initial metal layer is electrically connected with the first metal layer, and the initial metal layer is disconnected with the second metal layer.
In an embodiment of the invention, the first metal layer includes a scan line, a gate of a thin film transistor and/or a metal trace on the same layer as the scan line, and the second metal layer includes a data line, a source of the thin film transistor, a drain of the thin film transistor and/or a metal trace on the same layer as the data line.
In an embodiment of the invention, the display device includes a gate driver, the gate driver is located on the array substrate, and the defect is located in a region where the gate driver is located.
In an embodiment of the present invention, the photoresist is a positive photoresist.
In an embodiment of the present invention, the method further includes:
forming a passivation layer on the second metal layer;
and forming a pixel electrode layer on the passivation layer.
The embodiment of the invention has the following beneficial effects:
the method for repairing the short circuit of the metal circuit in the display device comprises the following steps: obtaining the information of the flaw point of the first metal layer and the initial metal layer, removing the photoresist layer on the flaw point, and etching the initial metal layer to form a second metal layer. Thus, the short circuit between the first metal layer and the second metal layer has been repaired, so that the display device can be continuously used, thereby reducing the cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic illustration of a prior art first metal layer and second metal layer shorting;
FIG. 2 is a cross-sectional view of a prior art first metal layer and second metal layer shorted;
FIG. 3 is a flowchart illustrating a method for repairing a short circuit in a metal layer of a display device according to an embodiment of the present invention;
fig. 4 is a sectional view corresponding to step S104 in fig. 3;
fig. 5 is a sectional view corresponding to step S105 in fig. 3;
fig. 6 is a sectional view corresponding to step S107 in fig. 3;
fig. 7 is a sectional view corresponding to step S108 in fig. 3;
FIG. 8 is a diagram illustrating a repaired first metal layer and a repaired second metal layer according to an embodiment of the invention;
reference numbers of the drawings:
110. 210-an array substrate; 120. 220 — a first metal layer; 130. 230-a dielectric layer; 131. 231-a gate insulating layer; 132. 232-a semiconductor layer; 140. 240-second metal layer (initial metal layer); 180. 280-particulate foreign matter.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "comprising" and "having," and any variations thereof, as appearing in the specification, claims and drawings of this application, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus. Furthermore, the terms "first," "second," and "third," etc. are used to distinguish between different objects and are not used to describe a particular order.
An embodiment of the present invention provides a method for repairing a short circuit in a metal layer of a display device, please refer to fig. 3 to 8, which includes:
s101, forming a first metal layer 220 on an array substrate 210;
in this embodiment, the array substrate 210 may be a glass substrate, or may be a substrate made of other materials, such as a flexible substrate, a plastic substrate, and the like. In this embodiment, the first metal layer 220 includes a scan line, a gate of a thin film transistor, and/or a metal trace on the same layer as the scan line. However, the present invention is not limited thereto, and in other embodiments of the present invention, the first metal layer includes a data line and/or a metal trace on the same layer as the data line.
S102, forming a dielectric layer 230 on the first metal layer 220;
in this embodiment, the dielectric layer 230 includes a gate insulating layer 231 and a semiconductor layer 232, but the invention is not limited thereto, and in other embodiments of the invention, the dielectric layer may include only the gate insulating layer 231 or other insulating layers. In this embodiment, due to the manufacturing process, there may be conductive particle impurities 280 (particles are illustrated in the drawings) or pores (pores are generated after the particle impurities 280 are removed or other reasons are generated) in the insulating layer, and these positions are the positions of the defects mentioned later.
S103: depositing an initial metal layer 240 on the dielectric layer 230;
in the present embodiment, an initial metal layer 240 is deposited on the dielectric layer 230, the initial metal layer 240 is a whole layer, and the material of the initial metal layer 240 is, for example, molybdenum, aluminum or an alloy material. If the particulate foreign matter 280 is present on the dielectric layer 230, the particulate foreign matter 280 may conduct electricity, thereby causing the first metal layer 220 and the initial metal layer 240 to be short-circuited; if there is a small hole in the dielectric layer 230, the initial metal layer 240 fills the small hole when the initial metal layer 240 is deposited, so that the initial metal layer 240 and the first metal layer 220 are shorted, and the location of the short is the defect point.
S104: forming a photoresist layer on the initial metal layer 240;
referring to fig. 4, in order to pattern the initial metal layer 240, a photoresist layer is formed on the initial metal layer 240 in this embodiment, and the photoresist layer is a positive photoresist. The photoresist layer forms a complete layer over the initial metal layer 240. When the flaw has the particle foreign matter 280, the photoresist layer slightly bulges upwards at the position of the flaw, and when the flaw has a small hole, the photoresist layer slightly sinks downwards at the position of the flaw.
S105, exposing and developing to remove part of the photoresist layer;
in the present embodiment, referring to fig. 5, a mask is disposed above the photoresist layer, the photoresist layer is exposed, and then developed, so as to remove a portion of the photoresist layer to pattern the photoresist layer, thereby facilitating the subsequent patterning of the initial metal layer 240.
S106: obtaining information of a flaw point where the first metal layer 220 is short-circuited with the initial metal layer 240;
in order to repair the short circuit between the first metal layer 220 and the initial metal layer 240, it is necessary to obtain information of a defect point where the first metal layer 220 and the initial metal layer 240 are short-circuited, which is information of a position of the defect point. The information of the flaw point can be obtained by automatic detection of a detection machine and can also be obtained by manual identification.
S107: removing the photoresist layer on the flaw point;
referring to fig. 6, since some defects still have a photoresist layer, in order to prevent the short circuit of two metal layers in the final display device, in this embodiment, the photoresist layer on the defect can be removed by laser, the laser removal of the photoresist layer is more precise, the range is more concentrated, the effect is better, and the cost is lower. In the present embodiment, the laser light is emitted from the side of the photoresist far from the array substrate 210, that is, from the upper side in the figure. In this embodiment, the laser-based method for removing the photoresist layer at the defect point can be performed automatically by a machine or manually.
S108: etching the initial metal layer 240 to form a second metal layer 240;
referring to fig. 7 and 8, in the present embodiment, the initial metal layer 240 is etched to form a second metal layer 240, and the second metal layer 240 includes a data line, a source of a thin film transistor, a drain of the thin film transistor, and/or a metal trace on the same layer as the data line. In other embodiments of the present invention, the second metal layer includes a pixel electrode layer and/or a metal trace on the same layer as the pixel electrode layer. In the embodiment, since the photoresist layer on the defect point is removed, the initial metal layer 240 at the defect point is etched away or is disconnected from other portions of the initial metal layer 240, that is, is disconnected from the second metal layer 240, so that the electrical signal on the first metal layer 220 is not transmitted to the second metal layer 240 through the defect point, and the electrical signal on the second metal layer 240 is not transmitted to the first metal layer 220 through the defect point, thereby repairing the short circuit between the first metal layer 220 and the second metal layer 240, so that the display device can be normally used, and the production cost is reduced. In this embodiment, the etching of the initial metal layer 240 may be performed by one process or may be performed by two processes, and when the etching is performed by one process, the defective initial metal layer 240 and the initial metal layer 240 that is not covered by the photoresist may be etched in the same process; in the two etching processes, the initial metal layer 240 not covered by the photoresist (the photoresist at the defect point is not removed) is first etched, and then the photoresist at the defect point is removed, and then the initial metal layer 240 at the defect point is etched. Furthermore, in the present embodiment, the step of etching the initial metal layer 240 specifically includes:
etching the initial metal layer 240 at the defect point;
in the present embodiment, by etching the initial metal layer 240 at the defective point, the short circuit between the first metal layer 220 and the subsequently formed second metal layer 240 can be repaired.
The initial metal layer 240 except for the defect points and not masked by the photoresist is etched to form a second metal layer 240.
In the present embodiment, the initial metal layer 240 is patterned by etching the initial metal layer 240 except for the defect points and which is not covered by the photoresist to form the second metal layer 240.
In this embodiment, the method for repairing a short circuit of a metal line in a display device includes: obtaining the information of the defect point of the first metal layer 220 and the initial metal layer 240, removing the photoresist layer on the defect point, and etching the initial metal layer 240 to form the second metal layer 240. Accordingly, the short circuit between the first metal layer 220 and the second metal layer 240 has been repaired, so that the display device can be continuously used, thereby reducing costs.
The existing liquid crystal display device driving technology tends to adopt a GOA technology gradually, the GOA technology can simplify the manufacturing process of the display device, a bonding process in the scanning line direction is omitted, the capacity can be improved, the product cost can be reduced, and meanwhile, the integration level of the display panel can be improved, so that the display panel is more suitable for manufacturing narrow-frame or frameless display products, and the visual pursuit of modern people is met. The GOA technology, i.e., the Gate Driver on Array technology, is to fabricate the Gate Driver on the Array substrate 210, and in this embodiment, the defect is located in the area where the Gate Driver is located.
In this embodiment, the method further includes: forming a passivation layer on the second metal layer 240; thereafter, the method further comprises the following steps: and forming a pixel electrode layer on the passivation layer.
In addition, in the present embodiment, the steps of steps S101 to S109 are not limited to the order mentioned above, and for example, S106 and S107 may be located before S105.
It should be noted that, in the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. For the device embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
Through the description of the above embodiments, the present invention has the following advantages:
the method for repairing the short circuit of the metal circuit in the display device comprises the following steps: obtaining the information of the flaw point of the first metal layer and the initial metal layer, removing the photoresist layer on the flaw point, and etching the initial metal layer to form a second metal layer. Thus, the short circuit between the first metal layer and the second metal layer has been repaired, so that the display device can be continuously used, thereby reducing the cost.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention, and it is therefore to be understood that the invention is not limited by the scope of the appended claims.
Claims (10)
1. A method of repairing a short circuit in a metal layer of a display device, comprising:
forming a first metal layer on the array substrate;
forming a dielectric layer on the first metal layer;
depositing an initial metal layer on the dielectric layer;
forming a light resistance layer on the initial metal layer, wherein the flaw point of the initial metal layer comprises a small hole, and the light resistance layer sinks towards the dielectric layer at the position of the flaw point;
exposing and developing to remove part of the photoresist layer;
obtaining information of a flaw point of the first metal layer and the initial metal layer;
removing the photoresist layer on the defect point;
the initial metal layer is etched to form a second metal layer.
2. The method of repairing a metal layer short in a display device according to claim 1, wherein the dielectric layer comprises an insulating layer, or wherein the dielectric layer comprises an insulating layer and a semiconductor layer.
3. The method of repairing a short circuit in a metal layer in a display device according to claim 1, wherein the removing of the photoresist layer on the flaw is performed by laser ablation.
4. The method of repairing a short circuit in a metal layer in a display device according to claim 3, wherein the laser is emitted from a side of the photoresist layer away from the array substrate.
5. The method of repairing a metal layer short in a display device according to claim 1, wherein the step of etching the initial metal layer to form the second metal layer comprises:
etching the initial metal layer at the defect point;
etching the initial metal layer except the defect points and not covered by the photoresist layer to form a second metal layer.
6. The method of repairing a short circuit in a metal layer in a display device according to claim 1, wherein conductive particle foreign matter is present at the defect point; or an initial metal layer exists at the flaw point, the initial metal layer is electrically connected with the first metal layer, and the initial metal layer is disconnected with the second metal layer.
7. The method for repairing a short circuit in a metal layer in a display device according to claim 1, wherein the first metal layer comprises a scan line, a gate of a thin film transistor and/or a metal trace in the same layer as the scan line, and the second metal layer comprises a data line, a source of a thin film transistor, a drain of a thin film transistor and/or a metal trace in the same layer as the data line.
8. The method of repairing a metal layer short circuit in a display device according to claim 1, wherein the display device comprises a gate driver, the gate driver is located on the array substrate, and the defect is located in a region where the gate driver is located.
9. The method of repairing a metal layer short in a display device according to claim 1, wherein the photoresist is a positive photoresist.
10. The method of repairing a metal layer short in a display device of claim 1, further comprising:
forming a passivation layer on the second metal layer;
and forming a pixel electrode layer on the passivation layer.
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| KR20060075971A (en) * | 2004-12-29 | 2006-07-04 | 주식회사 하이닉스반도체 | Method for fabrication of semiconductor device capable of increasing overlay margin |
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| KR0126101B1 (en) * | 1994-07-07 | 1997-12-26 | 김주용 | Forming method of repair mask |
| JP5605097B2 (en) * | 2010-09-03 | 2014-10-15 | ソニー株式会社 | Manufacturing method of electronic device |
| KR101976066B1 (en) * | 2012-06-08 | 2019-08-29 | 삼성디스플레이 주식회사 | Method for repairing short defect, the display apparatus manufactured by the repairing method and the organic light emitting display apparatus by the repairing method |
| CN106711028B (en) * | 2016-12-21 | 2019-08-13 | 惠科股份有限公司 | The restorative procedure and device of transistor |
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| KR20060075971A (en) * | 2004-12-29 | 2006-07-04 | 주식회사 하이닉스반도체 | Method for fabrication of semiconductor device capable of increasing overlay margin |
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