JP2009251353A - Active matrix display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an active matrix display device correcting a bright spot defect caused by a TFT (thin film transistor) without reducing the numerical aperture of a pixel part. <P>SOLUTION: The TFT serving as a switching element for applying voltage to the pixel part is formed as a circuit pattern functioning as a channel by holding a source electrode 7 on an a-Si layer 10 which is a semiconductor active layer, by a drain wiring leader 8b and drain auxiliary wiring 8c and applying voltage usually from the drain wiring leader 8b. The drain auxiliary wiring 8c is separated from drain wiring 8 and does not function usually. When a short circuit detect 20 occurs in a channel part of the TFT, the drain wiring leader 8b extended to the TFT is cut by laser machining (at a cut part 22b), and the drain auxiliary wiring 8c is fusion-connected (at fusion-connected parts 25a, 25b) to newly form a TFT channel which functions as a normal TFT. A point defect is thereby corrected into a normal lighting state. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an active matrix display device including a thin film transistor used in a liquid crystal display device, an organic EL device, or the like. In particular, it is for correcting a bright spot defect caused by a wiring defect existing on the thin film transistor substrate.

  2. Description of the Related Art In general, a thin film transistor (hereinafter referred to as TFT: Thin Film Transistor) substrate is widely used in an active matrix display device such as a liquid crystal display device or an organic EL (Electro Luminescence) display device. A TFT has a plurality of scanning signal lines and a plurality of data signal lines arranged on an insulating substrate such as glass, and a switching element such as a TFT is arranged at an intersection between the scanning signal lines and the TFT. A signal is transmitted to each pixel portion.

  In this TFT, a conductive film that is a wiring material, a semiconductor film that is an active layer, an insulating film that is an interlayer insulating material, and the like are formed on the entire surface of the substrate, and unnecessary regions are removed by using a photolithography method and an etching method. A circuit pattern is formed.

  When a pattern defect occurs in the circuit pattern, the liquid crystal display device or the organic EL device is abnormally displayed, and the liquid crystal display device is defective. Examples of display abnormality caused by TFT include short circuit between wires and disconnection. In particular, in a TFT abnormal operation due to a defect in the TFT element portion, the display pixel becomes a bright spot (always lit), which is a fatal defect and a defective product as a product.

  To date, there has been a correction using laser processing for this defect. When the TFT is separated from the pixel electrode or a bright spot defect occurs as disclosed in Patent Document 1, the repair region is melted by laser processing, and the pixel electrode and the signal line are connected to each other. Is corrected to a black spot.

  Patent Document 2 describes that two TFTs are connected to one pixel and an abnormal transistor is disconnected. A method is disclosed in which when one of the two TFTs has a bright spot defect due to a short circuit, the TFT that is caused by the bright spot is separated to make the defect inconspicuous on the display surface.

Japanese Patent Laid-Open No. 11-305260 JP-A-5-341316

  In liquid crystal display devices and organic EL devices, correction by laser processing is effective for bright spot defects caused by TFTs. In particular, laser processing is suitable for processing for cutting wiring, and has been used for repairing thin film transistor substrates. However, as the application destination of the liquid crystal display device is changing from a PC display to a large-sized TV, the pixel size becomes large, and the existence of the conventional black spot correction has become conspicuous.

  In the method disclosed in Patent Document 1, it is possible to change from a bright spot, which is a fatal defect, to a black spot that is not conspicuous on the display element, but the display device remains as a point defect as described above.

  Further, the method disclosed in Patent Document 2 has an advantage that the presence of defects becomes inconspicuous when the liquid crystal display device is lighted, by turning on half a pixel, as compared with the method disclosed in Patent Document 1. However, the wiring structure in which one pixel is controlled by two TFTs reduces the aperture ratio of the pixel portion, and in the case of a liquid crystal display device, there is a problem that the transmittance of the backlight serving as the light source is lowered. .

  The present invention solves the above-mentioned problems and corrects bright spot defects caused by TFTs without reducing the aperture ratio of the pixel portion by using the fine wiring cutting and fusion processing methods that are advantages of the laser processing method. An object is to provide an active matrix display device.

  In a first mode for achieving the above-described object of the present invention, in a TFT which is a switching element for applying a voltage to a pixel portion, a source electrode is connected to a drain wiring 2 on a-Si which is a semiconductor active layer. A circuit pattern that is sandwiched between books and normally functions as a channel by applying a voltage from one drain wiring is used. The other drain auxiliary wiring is separated from the drain wiring and does not normally function. When a short-circuit defect occurs in the channel portion of the TFT, the drain wiring extending to the TFT is cut by laser processing, and the other drain auxiliary wiring is fusion-bonded to newly form a TFT channel. It functions as a normal TFT. As a result, the point defect is corrected to a normal lighting state.

  The second aspect of the present invention is an electronic circuit pattern in which two or more drain wirings or source wirings for applying a voltage to the pixel portion are formed on the active matrix substrate. As a result, when a short circuit occurs between the source and drain electrodes of the TFT section, the bright spot defect caused by the short circuit of the source / drain electrodes of the TFT section is not turned into a black spot by cutting either of the wirings. Fixed the defect so that it was not noticeable.

  According to the present invention, even when a bright spot defect is corrected, the quality of an active matrix display device can be improved by correcting the defect inconspicuously by normal pixels or a half-lit state, instead of making the spot black as in the past. Can be increased. In addition, while a display device free from point defects such as bright spots and black spots is required, the active matrix display device of the present invention can improve the yield and reduce the manufacturing cost.

  Further, by using cutting and metal material fusion processing, which are advantages of laser processing, the processing time of the correction process can be reduced and the success rate of correction can be increased.

  Hereinafter, the best embodiment of the present invention will be described in detail with reference to the drawings. In the description of the embodiment, the wiring correction of the liquid crystal display device will be described as an example. However, it is generally applicable to the correction of an active matrix type circuit pattern formed on a flat surface such as a glass substrate. It is not limited.

  FIG. 1 is a diagram illustrating the structure of a general liquid crystal display device. 14 is a color filter substrate, 15 is an active matrix substrate, and 6 is a liquid crystal. 1 and 13 are glass substrates, 2 and 12 are polarizing plates, 3 is a counter electrode, 4 and 18 are alignment films, 5 is a gate insulating film, 7 is a source wiring, 8 is a drain wiring, 9 is a gate wiring, and 10 is a semiconductor. A layer (a-Si layer), 11 is a pixel electrode, 17 is a protective film (passivation film), 16 is a color filter, and 19 is a black matrix.

  In general, as shown in FIG. 1, a liquid crystal display device has a structure in which a liquid crystal 6 is sandwiched between two glass substrates 1 and 13, and a large number of pixel electrodes 11 and counter electrodes arranged in a matrix. 3 and the direction of the molecules of the liquid crystal 6 of each pixel is controlled by an electric field in a capacitor formed by the liquid crystal 6 and an electronic image. In the transmissive liquid crystal display device, the electronic image is displayed by controlling the transmittance of a backlight provided on the back surface and visualizing the image. A circuit for controlling the voltage applied to the pixel electrode is formed on the active matrix substrate 15, and a color image is displayed by, for example, forming three or more color filters 16 on the color filter substrate 14.

  FIG. 2 is a plan view for explaining an example of pixels formed on the active matrix substrate 15 for controlling the liquid crystal display device. FIG. 2 shows two adjacent pixels. Leaders are formed repeatedly in the vertical and horizontal directions and connected to a driving semiconductor for controlling the display device outside the display area.

  Various wirings and electrodes formed on the active matrix substrate 15 are constituted by a thin film multilayer circuit with an insulating layer interposed. In FIG. 1, a large number of gate wirings 9 are formed in a pixel on a substrate suitable for a glass substrate 13. On the gate wiring 9, an island of a semiconductor layer 10 (here, hydrogenated amorphous silicon: hereinafter a-Si layer 10) which is an active layer is patterned.

  A gate insulating film 5 is formed so as to cover the gate wiring 9, and a plurality of drain wirings 8 insulated by the gate insulating film 5 are formed in parallel in multiple directions intersecting the gate wiring 9. One pixel is formed in a region surrounded by two drain wirings 8. A part of the drain wiring 8 is formed on the a-Si layer 10 and serves as a drain electrode of the TFT. A part of the source wiring 7 is formed on the a-Si layer 10 in the same layer as the drain electrode and serves as a source electrode of the TFT.

  A gate insulating film is formed on the upper layer of the gate wiring 9, and a pixel electrode 11 that is conductively connected to the source wiring 7 is formed thereon. The pixel electrode 11 is a transparent electrode preferably made of ITO (Indium Tin Oxide). The TFT connected to the gate line 9 is turned on, and a voltage corresponding to the display data supplied to the drain line 8 is generated at the pixel electrode 11. An electric field having a magnitude corresponding to the voltage generated in the pixel electrode 11 is formed between the pixel electrode 11 and the counter electrode 3 on the color filter side. This electric field controls the molecular orientation of the liquid crystal and controls the amount of illumination light transmitted from the backlight to form a visible image.

  Such a thin film multilayer electronic circuit is generally formed by a photolithography technique. That is, first, a wiring material is uniformly formed on the entire substrate, and a photoresist, which is a photosensitive resin, is applied. Next, the photoresist is exposed by irradiating light through a mask on which a circuit pattern is formed. When this is developed, the exposed portion is removed and a photoresist pattern is formed. Further, circuit wiring is formed through an etching process and a resist stripping process. By repeating these steps, a thin film multilayer electronic circuit is completed.

  In these manufacturing processes, defects may occur in the electronic circuit pattern due to the influence of foreign matter on the substrate, process problems, and the like. When the electronic circuit pattern formed on the active matrix substrate of the liquid crystal display device is short-circuited or disconnected, the electric signal is not transmitted correctly and the display device is erroneously displayed. For this reason, correction is performed such that the short circuit portion is cut using laser processing to correct the circuit, or a new material is newly added to the missing portion to normalize the circuit.

  FIG. 3A shows a short-circuit defect 20 between the source wiring 7 and the drain wiring 8. In the normally black display device, when the source wiring 7 and the drain wiring 8 are short-circuited, the pixel becomes a bright spot defect that is always on regardless of the control of the a-Si layer 10 by the gate wiring 9. This is a fatal defect for the display device. A conventional correction method for this defect is a bright spot obtained by forming the cut portion 22 by laser processing of the drain wiring extending to the a-Si layer 10 as shown in FIG. It was a black spot correction.

  As a first embodiment of the present invention, a method for correcting a bright spot defect caused by a short circuit between the source wiring 7 and the drain wiring 8 of the TFT portion to normal lighting will be described.

  FIG. 4A shows an electronic circuit pattern of the active matrix substrate 15 of this embodiment. An island of the a-Si layer 10 is formed on the gate wiring 9 via the gate insulating film 5, and a source wiring 7 and two drain wirings 8 b and 8 c facing the source wiring 7 are formed on the island. Deploy. Hereinafter, 8b is referred to as a drain wiring lead line (hereinafter referred to as a lead line 8b), and 8c is referred to as a drain auxiliary wiring 8c.

  The number of lead lines 8b is one as in the prior art, and the TFT is driven by this lead line 8b in normal operation. The lead line 8 b is electrically connected to the drain wiring 8 at the window opening portion 21 of the gate wiring 9. On the opposite side of the source wiring 7, a spare drain auxiliary wiring 8 c that is not connected to the drain wiring 8 is provided. The drain auxiliary wiring 8c is used as a correction wiring when a short-circuit defect occurs in a channel portion that normally operates. The drain auxiliary wiring 8c has a structure overlapping with a lower gate wiring in order to perform wiring connection processing by laser processing.

  FIG. 4B shows a cross-sectional view of this overlapping portion (A-A ′ cross-section in FIG. 4A). An isolated pattern 9 b is formed on the window opening portion 21 of the gate wiring 9 with nine layers of the gate wiring. On the isolated pattern 9b of the gate wiring 9 (hereinafter referred to as the isolated gate wiring 9b), the gate insulating film 5, the a-Si layer 10, the drain wiring 8, and the drain auxiliary wiring 8c are patterned by the same process as other wiring regions. . However, since the drain auxiliary wiring 8c is not normally operated, the drain auxiliary wiring 8c and the drain wiring 8 are not connected. In order to connect to the drain auxiliary wiring 8c when a short-circuit defect occurs, the drain wiring 8 is provided with a convex portion 24 of about 5 μm capable of condensing a laser irradiation region for laser processing.

  FIG. 4C shows a correction method when the source line 7 of the TFT portion and the lead line 8b of the drain line 8 are short-circuited.

  The short-circuit defect 20 is caused by a short circuit due to the remaining material (for example, Al, Mo, Cu, etc.) of the source wiring 7 and the drain wiring 8, and ohmic contact between the wiring material and the a-Si layer 10 that is an active layer of the TFT. This is caused by the presence of the n + layer residue for forming and foreign matter between the channels. These defects are detected in an inspection process when manufacturing the active matrix substrate. Commonly used inspection methods include visual inspection equipment using a CCD camera and electrical testers using electron beams, and the substrate coordinates and types of defects detected by these inspection equipment are used. Information is transferred to the correction device and correction processing is performed. In this modification, a laser machining correction device was used.

  In order not to operate the channel portion of the short-circuited TFT, the cutting portion 22b is formed by laser processing of the lead line 8b. The lead line 8b has a circuit pattern in which no gate wiring is present in the lower layer, and the cutting portion 22b is provided by cutting the lead line 8b of the drain wiring 8 on the upper part. As the laser, a YAG (Yttrium Aluminum Garnet) pulse laser was used. The wiring material can be cut at any wavelength of the YAG laser, but when the active matrix substrate 15 is modified after completion, a protective film such as a SiN thin film is formed on the wiring. It is desirable to employ a fourth harmonic of 266 nm wavelength in order to suppress the thermal effect during laser processing.

  Next, a new drain wiring is formed to operate the TFT (FIG. 4C). Therefore, the drain auxiliary wiring 8c and the drain wiring 8 are connected. For the connection between the drain auxiliary wiring 8c and the drain wiring 8, an isolated gate wiring 9b overlapping the drain auxiliary wiring 8c is used. The superposed portion is irradiated with a pulse laser, and the lower isolated gate wiring 9b and the upper drain wiring 8 are fused by the respective metal materials to connect the wiring. In order to fuse, it is effective to fuse the metal material of the lower layer with one pulse. A 532 nm wavelength laser, 0.01 to 0.1 mJ, which is the second harmonic of YAG, is provided on the drain wiring 8. The projected portion 24 was irradiated in a region of 3 to 5 μm to form a fused portion 25a. By processing the convex portion 24 which is a laser irradiation region provided in the drain wiring 8, a structure such as disconnection of the drain wiring 8 itself due to processing of the overlapping portion is prevented.

  Similarly, the overlapping portion of the drain auxiliary wiring 8c and the isolated gate wiring 9b is connected by wiring by forming a fusion splicing portion 25b by laser processing to form a current path 26 as shown in FIG. The space between the wiring 8c and the source wiring 7 functions as a new channel portion of the TFT.

  With this correction, it was possible to cause a point defect that was always a bright spot due to a short circuit to function as a normal pixel by operating the TFT normally. In addition, it does not require a film forming process such as coating of materials or wiring formation by laser CVD, and normal point defects are achieved by a simple process such as cutting and fusing, which is an advantage of laser processing that has been widely used in the past. It became possible.

  In the above, the channel width and the channel length on the drain auxiliary wiring 8c side are arranged in the same manner as the circuit patterns of the source wiring 7 and the drain wiring 8 that are normally operated. However, if the arrangement is difficult due to the wiring pattern, TFT switching The same correction effect can be obtained by shortening the channel width and the channel length so that the operation functions similarly. A plurality of drain auxiliary wirings 8 c may be arranged on the island of the a-Si layer 10 so as to face the semiconductor source wiring 7. Further, the shape of the convex portion provided in the drain wiring 8 is not limited to a quadrangle, and may be any shape.

  In the second embodiment of the present invention, a method of correcting a bright spot defect caused by a short circuit between the source wiring 7 and the drain wiring 8 of the TFT portion to a semi-lighting state will be described.

  In this embodiment, this laser processing is used to make a correction so that the presence of defects is not conspicuous as compared with bright spots and black spots by making the light emitting state semi-lit instead of black spots. As shown in FIG. 3A, normally, the lead line of the drain wiring 8 extending to the TFT is formed by one, and a voltage is applied thereto. The active matrix substrate 15 of the present embodiment has a structure (8b, 8d) in which two drain wiring lead lines to the TFT portion are independently extended (FIG. 5A). The source wiring 7 is sandwiched between the two lead lines 8b and 8d to form a TFT channel. Under normal conditions, the TFT operation is performed between the two channels. When the short-circuit defect 20 occurs in one of the channels, the driving of the short-circuited channel is stopped. In order to stop the driving of the channel, a cut portion 22c is formed by laser processing the lead wire 8b of the drain wiring 8 for applying a voltage to the TFT portion.

  FIG. 6 shows a change in current between the source and the drain with respect to the gate voltage of the TFT. In FIG. 6, the horizontal axis represents the gate voltage Vg, and the vertical axis represents the source-drain current Isd. In the normal TFT portion, when the gate voltage reaches the threshold value (101), the current value supplied to the pixel becomes the saturation value (102), and white lighting is performed. In the modified TFT, the amount of current supplied to the pixel electrode 11 via the source line 7 is reduced by forming the cut line 22c in the lead line 8b of one drain line 8 extending to the TFT part. . That is, the channel width formed by the source / drain electrodes is halved, and the current value supplied to the pixel portion is halved (103). This is the same as the applied voltage (104) that is half that of a normal pixel, and a half-lit state is obtained. In the conventional black spot correction method, the bright spot is only processed as a black spot. However, the semi-lighting correction method of this embodiment enables processing to make the presence of defects when the display device is completed inconspicuous.

  FIG. 5B shows another pattern of the gate wiring 9 and the drain wiring 8. This is a pattern when the width of the gate wiring 9 is narrowed in order to ensure the aperture ratio of the pixel electrode 11. In FIG. 4A, the two lead lines 8b and 8d of the drain wiring 8 are drawn out from one window opening 21. However, if the gate wiring 9 is narrowed to increase the aperture ratio, one window opening 21 is formed. It is difficult to provide two lead wires 8b and 8d and to laser process the portions. Further, when the wiring interval between the lead lines 8b and 8d is narrowed, this portion is short-circuited, and the effectiveness as the correction wiring is lowered. Therefore, the window opening portion 21 of the gate wiring 9 is separated as shown in FIG. 5B, and wirings are provided so that the lead lines 8b and 8d can be easily cut. This circuit pattern can also be applied to the first embodiment. That is, the lead line 8b and the drain auxiliary wiring 8c shown in FIG. 4A of the first embodiment may be formed with a circuit pattern as shown in FIG. 5B.

  The third embodiment of the present invention is a case where bright spot defect correction is performed after the active matrix substrate 15 is completed. The correction procedure of the first embodiment is suitable when the point defect is corrected after the source wiring 7 and the drain wiring 8 are formed, but when the overlapping portion is connected after the active matrix substrate 15 is completed, the following procedure is performed. Correcting by the procedure can improve the success rate of the correction.

  (1) The protective film 17 such as SiN existing in the upper layer is removed and processed at a processing position of the overlapping portion with a wavelength of 266 nm which is the fourth harmonic of the YAG laser. The processing dimension is larger than the connection processing of the overlapping portion, and the window is opened (□ 7 to 10 μm). In the protective film processing, energy that does not remove the underlying metal wiring is used. Protective film removal processing is performed by irradiating a plurality of times at about 50 μJ.

  (2) As described in the first embodiment, connection processing of the overlapping portion is performed. In this case, the 266 nm wavelength used in the removal process of the protective film 17 can be used as it is. Irradiation energy is 0.01 to 0.1 mJ, and processing of the □ 3 to 5 μm region enables connection to the drain auxiliary wiring 8c.

  The fourth embodiment of the present invention is a case where a bright spot defect is corrected after the liquid crystal display device is completed. Since the bright spot defect correcting method of this embodiment does not require a new wiring material when wiring is connected, the correction process is performed even after the liquid crystal display device including the active matrix substrate 15 and the color filter substrate 14 is completed. Can be done.

  For detection of a bright spot defect after completion of the liquid crystal display device, a point defect location is specified by lighting inspection or the like, and a correction location is determined based on the coordinate information. After the liquid crystal display device is completed, the liquid crystal 6 and the color filter substrate 14 exist on the active matrix substrate 15. Therefore, laser irradiation for correction is performed from the back surface of the active matrix substrate 15, that is, from the gate wiring 9 side.

  Since laser irradiation from the back surface of the active matrix substrate 15 is performed through the glass substrate 13, it is desirable to select a laser wavelength with high transmittance of the glass substrate 13. Here, the second harmonic of 532 nm wavelength of YAG laser was used. The correction procedure is the same as in the first embodiment, in which the cut portion 22 is formed by laser processing on the lead wire 8b of the drain wiring 8 of the TFT in which the short-circuit defect 20 has occurred, and then the overlapping portion is connected (25a, 25b). Carried out. Since the convex portion 24 of the laser irradiation region provided in the drain wiring 8 is not observed from the back surface of the active matrix substrate 15, the processing position is determined by the dimension from the end of the isolated gate wiring 9b. By connecting the two overlapping portions, the bright spot defect generated by the source wiring 7 and the drain wiring 8 in the TFT portion could be corrected as a normal pixel.

  Needless to say, even in the half-lighting correction shown in the second embodiment, the correction process can be performed by performing laser irradiation from the back surface of the active matrix substrate 15 after the liquid crystal display device is completed.

  The present invention can be widely applied to active matrix display devices. Display devices that require quality such as large TVs are required to have high quality without defects, and have been conventionally used for defects whose quality is reduced by the active matrix display device of the present invention. It can be corrected by the existing laser processing process.

It is a figure explaining the structure of a general liquid crystal display device. It is a figure explaining the circuit pattern of a general active matrix substrate. It is a figure explaining the short circuit defect of a source wiring and a drain wiring in the TFT part on an active matrix substrate. It is a figure explaining black spot correction. It is a figure explaining the circuit pattern on the active matrix substrate concerning Example 1 of this invention. FIG. It is a figure explaining the correction method by the circuit pattern. It is a figure explaining the current path after correction. It is a figure explaining the circuit pattern concerning Example 2 of this invention. It is a figure explaining another circuit pattern different from (a). It is a figure which shows the electric current change between the source-drain with respect to the gate voltage of TFT.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,13 ... Glass substrate, 2, 12 ... Polarizing plate, 3 ... Counter electrode, 11 ... Pixel electrode, 4, 18 ... Orientation film, 5 ... Gate insulating film, 6 ... Liquid crystal (molecule), 7 ... Source wiring, 8 ... Drain wiring, 8a, 8b, 8d ... drain wiring lead line, 8c ... drain auxiliary wiring, 9 ... gate wiring, 9b ... isolated gate wiring, 10 ... semiconductor layer, 14 ... color filter substrate, 15 ... active matrix substrate, 16 DESCRIPTION OF SYMBOLS ... Color filter, 17 ... Protective film, 19 ... Black matrix, 20 ... Short circuit defect, 21 ... Window opening part, 22, 22b, 22c ... Cutting part, 24 ... Drain wiring convex part, 25a, 25b ... Fusion splicing part , 26 ... Current path

Claims (6)

A plurality of gate lines formed in the first direction, a plurality of drain lines formed in the second direction, a gate line formed in the first direction, and the second direction. An active matrix display device comprising: a thin film transistor provided for each portion where the drain wiring intersects; and a pixel electrode electrically connected to the source wiring of the thin film transistor,
An active matrix display device comprising: a wiring structure in which one source wiring is arranged on a semiconductor layer of the thin film transistor and a plurality of drain wirings arranged facing the source wiring are arranged.   One of the plurality of drain wirings arranged on the semiconductor layer of the thin film transistor so as to face the source wiring is a drain wiring lead line for driving the thin film transistor, and the drain formed in the second direction. The other is a drain auxiliary wiring for correction, and the drain auxiliary wiring is formed electrically isolated from the drain wiring formed in the second direction. The auxiliary wiring is arranged so as to overlap with the isolated gate wiring formed electrically isolated from the gate wiring formed in the first direction via the insulating film, and the drain wiring formed in the second direction. 2. The wiring structure according to claim 1, further comprising: a wiring structure arranged to overlap with the isolated gate wiring through an insulating film at a portion different from the drain auxiliary wiring. Restorative matrix type display device.   The drain wiring formed in the second direction includes a convex region for laser irradiation, and the convex region is disposed so as to overlap with the isolated gate wiring through an insulating film. 3. An active matrix display device according to 2.   The semiconductor layer of the thin film transistor is formed on the gate wiring formed in the first direction through a gate insulating film, and the drain wiring lead-out line is formed in the second direction at a portion where the gate wiring is not formed. 3. The active matrix display device according to claim 2, wherein the active matrix display device is connected to the formed drain wiring.   The plurality of drain wirings disposed on the semiconductor layer of the thin film transistor so as to face the source wiring are drain wiring lead lines for driving the thin film transistor and are electrically connected to the drain wiring formed in the second direction. The active matrix display device according to claim 1, wherein the active matrix display device is connected to the active matrix display device.   The semiconductor layer of the thin film transistor is formed on a gate wiring formed in the first direction via a gate insulating film, and a plurality of drain wiring lead lines are formed in the second portion where the gate wiring is not formed. The active matrix display device according to claim 5, wherein the active matrix display device is connected to a drain wiring formed in the direction of.

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