JP2011085722A - Active matrix-type display device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a redundancy circuit which corrects a light point defect, which is caused by a defect of an active matrix substrate, as a normal image, the light point defect having been corrected by blackening, and to provide a correcting method therefor. <P>SOLUTION: A TFT 10 for correction and a light-receiving element 12 are provided as a redundancy circuit. Part of a light-shielding layer 14 provided below the light-receiving element 12 is removed to drive the TFT 10 for correction. A non-defective pixel of the light-receiving element 12 is made conductive by shielding backlight 17 by the light-shielding layer 14. A defective pixel of the light-receiving element 12 is made non-conductive by removing a part of the light-shielding layer 14 by using the backlight 17. The defect is corrected to a non-defective pixel by using the redundancy circuit, thereby improving quality of an active matrix-type display device. Furthermore, the time required for correction is reduced by removal, fusion or the like, which is advantageous to a laser, thereby improving a success rate in the correction. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a pattern correction technique for correcting a defective portion of an electronic circuit pattern formed on a substrate, and more particularly to a technique for processing an electronic circuit pattern defect formed in a TFT substrate or the like.

  2. Description of the Related Art In general, a thin film transistor (hereinafter referred to as TFT: Thin Film Transistor) substrate is widely used in an active matrix display device such as a liquid crystal display device or an organic EL (Electro Luminescence) display device. A TFT has a plurality of scanning signal lines and a plurality of data signal lines arranged on an insulating substrate such as glass, and a switching element such as a TFT is arranged at an intersection between the scanning signal lines and the TFT. A signal is transmitted to each pixel portion.

  In this TFT, a conductive film as a wiring material, a semiconductor film as an active layer, an insulating film as an interlayer insulating material, etc. are formed on the entire surface of the substrate, and unnecessary regions are removed by using a photolithography method and an etching method. The circuit pattern is formed.

  When a pattern defect occurs in the electronic circuit pattern, the display of the liquid crystal display device or the organic EL device becomes abnormal, and the liquid crystal display device or the like becomes a defective product. The display abnormality of the TFT substrate includes, for example, a short circuit between wires or a disconnection. In particular, in the abnormal TFT operation due to a defect in the TFT element portion, the display pixel becomes a fatal defect in which the display pixel is in a bright spot (always on) state, and this product becomes a defective product.

  To date, there has been a correction using laser processing for this defect. Defects are made inconspicuous by separating the TFT from the pixel electrode or by connecting the pixel electrode to another wiring or an adjacent pixel electrode as disclosed in Patent Document 1.

  In addition, as disclosed in Patent Document 2, it is described that two TFTs are provided in one pixel and an abnormal transistor is separated. A method is disclosed in which when one of the two becomes a luminescent spot defect due to a short circuit, the TFT which is caused by the luminescent spot is separated and the half pixel region is corrected to a black spot.

Japanese Patent Laid-Open No. 11-305260 JP-A-5-341316

  In liquid crystal display devices and organic EL display devices, correction by laser processing is effective for bright spot defects caused by TFTs. In particular, laser processing is suitable for processing for cutting the wiring, and has been used for correction of TFT substrates. However, while the application destination of the liquid crystal display device is changing from a PC display to a large-sized TV, the pixel size is also increased, and the existence of the defect has become conspicuous in the conventional black spot correction method.

  In the method disclosed in Patent Document 1, it is possible to process from a bright spot, which is a fatal defect, to a black spot that is inconspicuous as a display element, but the display device remains as a point defect as described above.

  Further, the method disclosed in Patent Document 2 has an advantage that the presence of defects becomes inconspicuous when the liquid crystal display device is lighted, by turning on half a pixel, as compared with the method disclosed in Patent Document 1. However, since the lighting state of the pixel has only about half the luminance, it is difficult to say that the pixel is a normal pixel. Furthermore, the wiring structure in which one pixel is divided into two to control the pixel portion reduces the aperture ratio of the pixel portion. In the case of a liquid crystal display device, there is a problem in that the transmittance of the backlight serving as the light source is lowered. It was.

  The present invention solves the above-described problems, and provides an active matrix display device that corrects defects due to TFT or the like to normal pixels by using fine wiring processing, which is an advantage of laser processing, and a method for manufacturing the same. Objective.

  The first mode for achieving the above-described object of the present invention is that a circuit pattern for correcting a defect is formed in advance on a TFT circuit pattern, and a normal pixel is obtained only by cutting and melting by laser processing. The TFT circuit pattern can be corrected. A drive circuit using a semiconductor active layer and a light receiving element is installed as a redundant circuit. When a short circuit occurs between the source wiring and the drain wiring, or when the TFT active layer is not driven, the drain wiring is disconnected. The semiconductor layer is driven by functioning the light receiving element of the redundant circuit. In order to make the light receiving element function, at least a part of the light shielding layer and the light shielding thin film that is provided in the same layer and independently of the gate wiring, which is usually the light shielding layer, or the light shielding thin film instead thereof is removed or opened by laser processing, and the backlight Light is irradiated to the light receiving element of the redundant circuit.

  The second aspect of the present invention is to drive the semiconductor active layer by removing the light shielding layer from the upper layer portion of the TFT substrate by laser processing. This light shielding layer is composed of a black matrix (hereinafter referred to as BM) layer mounted on a color filter substrate and a BM layer in a color filter on array (hereinafter referred to as COA: Color filter On Array) structure. By removing this light shielding layer, the light receiving element is irradiated with backlight.

  According to the present invention, even when a bright spot defect is corrected, the defect can be corrected to a normal pixel instead of blackening as in the prior art. In addition, even when the TFT portion is not driven and has a black spot defect, the defect can be corrected in the normal pixel by using the redundant circuit, and the quality of the active matrix display device can be improved. In addition, while a display device free from point defects such as bright spots and black spots is required, the active matrix display device of the present invention can improve yield and reduce manufacturing cost.

  Further, by using processing such as removal processing and melting processing, which are the advantages of laser, it is possible to reduce the processing time of the correction process and increase the success rate of correction.

It is a figure explaining the circuit pattern of a TFT substrate. It is a figure explaining the short circuit defect of a TFT part. (A) is a figure explaining the redundant circuit of the Example of this invention, (b) is A-A 'sectional drawing of the redundant circuit of the Example of this invention. (A) is a figure explaining the correction method of the short circuit defect of the Example of this invention, (b) is B-B 'sectional drawing explaining the drive method of a light receiving element part. It is a figure explaining sectional drawing of the liquid crystal display device of the Example of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the examples. In the description of the embodiment, the wiring correction of the liquid crystal display element will be described as an example. However, it is generally applicable to the correction of the display element using the active matrix substrate, and is not limited to the liquid crystal display element.

  In general, a liquid crystal display element has a structure in which liquid crystal molecules are sandwiched between two glass substrates, and a large number of pixel electrodes arranged in a matrix and an electric field in a capacitor formed by liquid crystal molecules, An electronic image is generated by controlling the orientation of liquid crystal molecules of individual pixels. In a transmissive liquid crystal display element, an electronic image is displayed by controlling the transmittance of backlight light provided on the back surface and visualizing it. A circuit for controlling the voltage applied to the pixel electrode is formed on the TFT substrate, and a color image is displayed by forming, for example, three or more color filters on the color filter substrate.

  FIG. 1 is a plan view illustrating an example of a pixel formed on a TFT substrate of a liquid crystal display element. FIG. 1 shows two adjacent pixels. Various wirings and electrodes formed on the TFT substrate are formed of a thin film multilayer circuit with an insulating layer interposed. A large number of gate wirings 1 are formed on a substrate made of glass. An amorphous silicon (hereinafter a-Si) layer 2 as an active layer is formed on the gate electrode 1. A gate insulating layer (not shown) is formed so as to cover the gate wiring 1, and a plurality of drain wirings 3 insulated by the gate insulating layer are patterned in parallel in the other direction intersecting the gate wiring 1, and two gates One pixel is formed by being surrounded by the wiring 1 and the two drain wirings 3. A source wiring 4 is provided on the a-Si layer 2 in the same layer as the drain wiring 3 and is connected to the pixel electrode 5. A transparent conductive film such as a transparent conductive film (hereinafter referred to as ITO: Indium Tin Oxide) is preferably used for the pixel electrode 5 to transmit light of the backlight, and is connected to the source wiring 4 and the contact portion 6. A part of the drain wiring 3 extends on the a-Si layer 2 to become the drain electrode 3 of the TFT, and a part of the source wiring 4 extends on the a-Si layer 2 to form the source electrode of the TFT. (In this specification, the same reference numerals are used for the wiring and the electrode). A doping layer is provided between the drain electrode 3 and the source electrode 4 and the a-Si layer 2 in order to obtain an ohmic contact. With this structure, the display data supplied to the drain wiring 3 is supplied to the pixel electrode 5 through the source wiring 4 when the TFT connected to the gate wiring 1 is turned on and driven for one pixel electrode 5. To do. When an electric field having a magnitude corresponding to the supplied voltage is generated, the liquid crystal molecules are aligned, and a visible image is generated by controlling the amount of illumination light transmitted from the backlight.

  A thin film multilayer electronic circuit pattern such as this TFT substrate is generally formed by a photolithography method. That is, first, a wiring material is uniformly formed on the entire glass substrate, and a photoresist, which is a photosensitive resin, is applied. Next, the photoresist is exposed by irradiating with ultraviolet light through a mask on which the electronic circuit pattern of each layer is formed. When this is developed, the exposed portion is removed and a photoresist pattern is formed. Furthermore, a desired electronic circuit board is formed by transferring the mask pattern to the substrate through an etching step and a resist stripping step. By repeating these steps, a thin film multilayer substrate is completed.

  In the manufacturing process of these TFT substrates, defects may occur in the electronic circuit pattern due to the influence of foreign matters on the substrate, process problems, and the like. When the electronic circuit pattern formed on the TFT substrate of the liquid crystal display device is short-circuited or disconnected, an electric signal is not transmitted correctly and the display element is erroneously displayed. Therefore, use laser processing to correct the circuit by cutting the short circuit, or add new material to the missing part to correct the circuit by cutting the short circuit. The electronic circuit pattern is corrected by adding a new material or normalizing it.

  FIG. 2 shows a short-circuit defect 7 between the source wiring 4 and the drain wiring 3. In the normally black display device, the pixel is turned on when the source wiring 4 and the drain wiring 3 are in a conductive state. Therefore, when the short-circuit defect 7 occurs, the pixel becomes a bright spot defect that is always lit regardless of the control of the a-Si layer 2 by the gate wiring 1. This is a fatal defect as a display device, and the product becomes a defective product. A conventional correction method for this defect is a fatal defect by cutting the drain wiring 3 extending to the a-Si layer 2 by laser processing as shown in FIG. This is a correction to make the bright spot defect black.

  The cause of the short-circuit defect 7 is mainly a short circuit due to the metal wiring material of the drain wiring 3 and the source wiring 4 and a short circuit due to an etching residue of the n + a-Si layer which is a doping layer for obtaining an ohmic contact. These defects are detected from the TFT circuit pattern by an electron tester using an electron beam irradiation or an electro-optic effect, and defective pixels and defective wiring are extracted. Information on the detected defect coordinates and defect type is transmitted to the correction device via the information system of the production line. The correction device performs correction work such as laser processing using an optical microscope or the like. In order to specify the defect, the operator specifies the defect location based on the coordinate information from the electric tester, or the defect position is automatically specified using image processing. In addition, unlike a metal wiring such as an n + a-Si layer, a thin film interference filter or a defect using thin film optical characteristics using infrared light is used for a material having a small reflection in the visible light region. The manifestation method is effective. Correction processing is performed for the abnormality of the circuit pattern that is the source of the recognized bright spot defect. For example, in the bright spot defect caused by the short circuit 7 between the source electrode 4 and the drain electrode 3 on the a-Si layer 2 as shown in FIG. The drain electrode 3 is cut by laser processing using the window 8 of the gate wiring 1 below the drain wiring 3 provided in advance in the gate wiring 1 to cut off the current that is always supplied to the pixel electrode 5. To achieve black spot correction.

  In this conventional correction method, black spot correction can be performed, but lighting and extinction cannot be switched as a normal pixel. Even in a pixel that has been subjected to a black spot process with an increase in the size of a liquid crystal display device in recent years, a defect cannot be ignored due to an increase in the size of the pixel.

  Therefore, in the embodiment of the present invention, by providing a redundant circuit, not only the black spot process but also a correction process for making bright spot defects and other defects normal pixels is performed.

  FIG. 3A shows a redundant circuit according to the embodiment of the present invention. Generally, a switching TFT for supplying power to the pixel unit 5 is a method of mounting one or two TFTs for one pixel and driving them simultaneously. The TFT circuit pattern of this embodiment is equipped with a correction TFT (correction a-Si layer) 10 used only when a bright spot defect or TFT operation failure occurs in addition to a TFT that operates normally. The correction TFT 10 is normally not connected to the power supply destination pixel 5 and has a circuit pattern that does not function as a switching circuit. That is, the correction source wiring 11 of the correction TFT 10 is normally electrically disconnected from the power supply destination pixel 5.

  The redundant circuit and the correction method of this embodiment are characterized in that redundancy is realized only by laser cutting and melting without using laser CVD or metal material coating. Therefore, the correction source wiring 11 is formed on the a-Si light receiving element 12 with a certain distance from the source wiring auxiliary line 13. In the a-Si light receiving element 12, a light shielding layer 14 pattern is formed in the same layer as the gate wiring 1. Since this light shielding layer 14 is isolated from the gate wiring 1 and is not affected by the gate voltage when driving the TFT, the constantly correcting source wiring 11 and the source wiring auxiliary line 13 are connected via the a-Si 12. Insulated state (in-plane direction).

  A cross-sectional view of the a-Si light receiving element 12 is shown in FIG. In general, in the case of a liquid crystal display device, backlight light 17 is irradiated from the back surface (glass substrate 16) side of the TFT substrate. When the a-Si layer 12 is irradiated with this light, a light electromotive force is generated from the a-Si layer 12, and the driving of the liquid crystal display device is affected. Therefore, the light shielding layer 14 is formed in the same layer as the gate wiring 1. This light shielding layer 14 blocks the light of the backlight 17, and no photoelectromotive force is generated in the light receiving element 12. Therefore, in this state, the correction source wiring 11 and the source wiring auxiliary line 13 are not electrically connected. The light shielding layer 14 can be formed at the same time as the gate wiring 1 is formed. However, from the viewpoint of laser removal processability, a new resin layer is formed or the resist film thickness is changed during photolithography. It is also effective to reduce the thickness of only the light shielding layer 14.

  Next, a bright spot defect correcting method using this redundant circuit will be described with reference to FIG.

  When a short-circuit defect 7 such as an n + layer that is a foreign substance or a doping layer exists between the drain electrode 3 and the source electrode 4 (between channels) on the a-Si layer 2, this power supply pixel has a bright spot defect that is always lit. It becomes. With respect to this defect detected by the electric tester, the drain wiring 3 is cut by laser processing (cutting part 18) at the correction window 8b of the gate wiring 1 provided in advance for correction. As a result, no drain voltage is applied to the a-Si layer 2 and power supply to the pixel unit 5 is also stopped (FIG. 4A).

  Next, the defective pixel is normalized by using a correction TFT. The correction source wiring 11 and the source wiring auxiliary line 13 are electrically connected. As described above, the space between the two wires (between the electrodes 19) is in an insulated state via the a-Si light receiving element 12. Therefore, by irradiating this portion with light such as backlight light 17 (see FIG. 3B), a photovoltaic force is generated between the electrodes 19, and the state is always switched from the insulated state to the conductive state. FIG. 4B is a cross-sectional view for explaining laser processing of the a-Si light receiving element 12. Laser light 21 is irradiated from the glass substrate 16 side, and a transmission window 20 is opened to allow the backlight light 17 to pass through the light shielding layer 14 between the glass substrate 16 and the gate insulating film 15. The transmission window 20 may have a gap or film thickness that allows at least 50% of the backlight 17 to pass through the light shielding layer 14.

  In the active matrix display device of this embodiment modified in this way, the light receiving element 12 shields the backlight light 17 by the light shielding layer 14 provided on the incident side of the backlight light 17 for pixels having no defect. As a result, the non-conducting state is established (see FIG. 3), and at least a part of the light shielding layer 14 is removed from the defective pixel, and the conducting state is established by the backlight 17 (see FIG. 4).

A preferred apparatus configuration for performing the correction process according to the first embodiment will be described. In order to process the transmission window 20 in the light shielding layer 14, a continuous wave laser or a long pulse laser of microsecond or more is suitable. With a pulsed laser of about nanoseconds, the peak value of the laser is large, and it is difficult to remove only the light shielding layer 14. In addition, when the light shielding layer 14 is a metal film, an infrared laser such as a fundamental wave (1.024 μm) of a YAG (Yttrium Aluminum Garnet) laser or a CO ₂ laser (10.6 μm) is used. 20 is easy to form. For materials that can be expected to be processed by photolytic action, such as resin, the third harmonic (355 nm wavelength) of YAG that transmits the glass surface is suitable.

  Further, by using a femtosecond laser having a depth of focus of 1 μm or less and its imaging optical system, the transmission window 20 is formed by locally processing the glass substrate 16 from the glass substrate 16 with the focal position aligned. Is also effective.

  In the cutting process for stopping the power supply to the short-circuit portion 7, a pulse YAG laser of nanoseconds to several tens of nanoseconds can be used. Each laser described above is irradiated to a desired processing region through a condenser lens such as an objective lens and a mask such as a slit. The processing state is observed by an observation optical system such as a CCD camera mounted coaxially with the laser, and it is determined whether the correction process is sufficient depending on the processing state.

  This correction can be corrected by the above-described apparatus configuration even after the TFT substrate is completed and the liquid crystal is sealed.

  As described above, by providing a redundant circuit in the TFT circuit pattern in advance and performing laser processing, a bright spot defect can be corrected to a normal pixel, and the defect repair rate can be improved.

  The embodiment of the second embodiment of the present invention relates to a liquid crystal display device in which the backlight light 17 is incident from the color filter (hereinafter referred to as CF: Color Filter) side.

  FIG. 5 is a sectional view of a liquid crystal display device according to an embodiment of the present invention. In FIG. 5, 101 is a CF substrate, 102 is a TFT substrate, 22 is a liquid crystal molecule, 23 is an alignment film, 24 is a transparent conductive film, 25 is a polarizing plate, and 26 is a black matrix (hereinafter referred to as BM: Black Matrix) layer.

  In the first embodiment, the case where the backlight light 17 is irradiated from the TFT substrate 102 side which is currently widely used has been described. In Example 1, the light shielding layer 14 is necessary to avoid the influence on the TFT drive by the backlight 17 from the TFT side.

  Hereinafter, an example of the backlight light 17b irradiation from the CF substrate 101 side according to the second embodiment will be described.

  In this configuration, the BM layer 26 is provided on the CF substrate 101. The BM layer 26 is formed so as to cover the a-Si light receiving element 12 shown in FIG. 4, and when the backlight light 17b is irradiated from the CF substrate 101 side, the backlight light 17b is received by the a-Si light receiving. The substrate configuration is such that the element 12 is not irradiated. The BM layer 26 is generally formed of a resin layer and can be removed by a UV laser. When a bright spot defect is detected on the TFT substrate 102, normalization processing is performed according to the following procedure.

  First, in order to separate the TFT causing the bright pixel, the lead line portion of the drain wiring 3 is formed from the glass substrate 16 side of the TFT substrate 102 using the window portion 8b (see FIG. 4A). Cut by laser processing.

  Next, in order to correct the normal pixel, in order to enable the a-Si light receiving layer 12 which is a redundant circuit, the backlight 17b for generating a photocurrent is incident from the CF substrate 101 side. A window is opened in the BM layer 26. The BM layer 26 is removed by laser light from the glass substrate 16 side of the CF substrate 101. Thereby, the backlight 17b is irradiated to the a-Si light receiving element 12, so that the correction source wiring 11 and the source wiring auxiliary line 13 are electrically connected. By this processing, a voltage is supplied to the pixel electrode 5 and functions as a normal pixel.

  In the active matrix display device of this embodiment modified in this way, the light receiving element 12 is in a non-conducting state due to the backlight 17b being shielded by the black matrix layer 26 for pixels that are not defective. For a certain pixel, at least part of the black matrix layer 26 is removed, and the pixel is brought into a conductive state by the backlight 17b.

  When the processing is performed after the optical polarizing plate 25 is attached to the CF substrate 101 and the TFT substrate 102, the processing laser does not damage the polarizing plate 25, so that the CF substrate 101 side and the TFT substrate 102 are not damaged. By using a laser beam having the same polarization state as the polarization direction of the polarizing plate 25 attached to each side, the lead line of the drain line 3 is cut and the BM layer 26 is removed without damaging the polarizing plate 25. be able to.

  Similarly, in the COA structure in which a color filter layer is directly formed on the TFT substrate 102, the BM layer 26 is laser-processed from the upper layer on the color filter layer side, whereby backlight light is transmitted to the a-Si light receiving element 12. 17b is irradiated and the redundancy circuit is activated.

  When the backlight is irradiated from the color filter side, an antireflection film such as chromium oxide is formed on the lower surface of the light shielding layer 14 provided on the TFT substrate 102, that is, on the contact layer with the glass substrate 16. Then, an antireflection treatment is performed on incident light such as natural light from the TFT substrate 102 side which is the surface of the display element. In this embodiment, the light shielding layer 14 is not essential. However, if the light shielding layer 14 is provided as shown in FIG. 5, the backlight 17b is transmitted to the surface of the display device in the pixel in which the window is opened in the BM layer 26. Can be prevented from leaking. On the contrary, in Example 1, the BM layer 26 is not essential, but if the BM layer 26 is formed so as to cover the light receiving element 12 as shown in FIG. In the pixel, the backlight 17 can be prevented from leaking from the surface of the display device.

  Except for the above points, the second embodiment is the same as the first embodiment.

  With the above processing, it is possible to make the TFT substrate 102 non-defective by performing redundancy correction using the a-Si light receiving element 12 on the defect that has been conventionally blackened from the base point defect. This a-Si light receiving element 12 is the same thin film as the a-Si layer 2 (see FIG. 3) which is the active layer of the TFT, and can be formed by the same process, and a redundant circuit can be formed without increasing the number of processes. Can be formed.

  In the embodiments, the liquid crystal display device has been described as an example. However, a display device using a switching element such as an organic EL (Electroluminescence) device using the TFT substrate 102 or an electronic circuit pattern substrate is limited to the liquid crystal display device. is not.

  DESCRIPTION OF SYMBOLS 1 ... Gate wiring, 2 ... a-Si, 3 ... Drain wiring (electrode), 4 ... Source wiring (electrode), 5 ... Pixel electrode, 6 ... Contact part, 7 ... Short-circuit defect, 8, 8b ... Correction window part , 9 ... Drain wiring cutting part, 10 ... Correction TFT (correction a-Si layer), 11 ... Correction source wiring, 12 ... a-Si light receiving element, 13 ... Source wiring auxiliary line, 14 ... Light shielding layer, 15 DESCRIPTION OF SYMBOLS ... Insulating film, 16 ... Glass substrate, 17, 17b ... Back light, 18 ... Cutting part, 19 ... Between electrodes, 20 ... Window opening part, 21 ... Laser beam for processing, 22 ... Liquid crystal molecule, 23 ... Alignment film, 24 ... Transparent conductive film, 25 ... Polarizing plate, 26 ... BM layer, 101 ... Color filter substrate (CF substrate), 102 ... TFT substrate

Claims (7)

An active matrix substrate having a plurality of gate wirings, a plurality of drain wirings, a thin film transistor provided at an intersection of the gate wiring and the drain wiring, and a pixel electrode electrically connected to the source wiring of the thin film transistor A matrix display device,
An active matrix display device comprising: a correction semiconductor active layer as a redundant circuit of the thin film transistor; and a light receiving element connected in series with the correction semiconductor active layer.   The light receiving element is in a non-conductive state by shielding the backlight light by a light shielding layer provided on the incident side of the backlight for pixels having no defect, and for the pixels having a defect by the light shielding layer. 2. The active matrix display device according to claim 1, wherein at least part of the active matrix display device is turned on by the backlight.   3. The light-shielding layer is provided in the same layer as the gate wiring and independently of the gate wiring, and has a correction source wiring and a source wiring auxiliary line on the light receiving element. Active matrix display device.   The light receiving element is in a non-conductive state by blocking the backlight light by the black matrix layer for pixels having no defect, and by removing at least a part of the black matrix layer for pixels having a defect. 2. The active matrix display device according to claim 1, wherein the active matrix display device is turned on by the backlight.   5. The active matrix display device according to claim 4, further comprising a correction source line and a source line auxiliary line on the light receiving element.   The semiconductor active layer of the thin film transistor and the semiconductor active layer for correction are formed above the gate wiring, and the light receiving element is formed in a portion different from the gate wiring. Active matrix display device. An active matrix substrate having a plurality of gate wirings, a plurality of drain wirings, a thin film transistor provided at an intersection of the gate wiring and the drain wiring, and a pixel electrode electrically connected to the source wiring of the thin film transistor A manufacturing method of a matrix type display device,
The active matrix display device includes a correction semiconductor active layer as a redundancy circuit of the thin film transistor, and a light receiving element connected in series with the correction semiconductor active layer,
The thin film transistor of the pixel in which the defect has occurred is cut, and the pixel is corrected to drive the correction semiconductor active layer by removing at least a part of the light shielding layer provided below or above the light receiving element. A method of manufacturing an active matrix display device.

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