CN107170709A - The method for repairing metal level short circuit in display device - Google Patents
The method for repairing metal level short circuit in display device Download PDFInfo
- Publication number
- CN107170709A CN107170709A CN201710413880.9A CN201710413880A CN107170709A CN 107170709 A CN107170709 A CN 107170709A CN 201710413880 A CN201710413880 A CN 201710413880A CN 107170709 A CN107170709 A CN 107170709A
- Authority
- CN
- China
- Prior art keywords
- layer
- metal layer
- short circuit
- display device
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 166
- 239000002184 metal Substances 0.000 title claims abstract description 166
- 238000000034 method Methods 0.000 title claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 34
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008439 repair process Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The embodiment of the invention discloses a kind of method for repairing metal level short circuit in display device, including：The first metal layer is formed on array base palte；Dielectric layer is formed on the first metal layer；Deposition forms initial metal layer on the dielectric layer；Photoresist layer is formed in the initial metal layer；Exposure, development remove the part photoresist layer；Obtain the information of the first metal layer and the flaw point of initial metal layer short circuit；Remove the photoresist layer on the flaw point；The initial metal layer is etched to form second metal layer.Using the present invention, have the advantages that to improve display device short circuit.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of method for repairing metal level short circuit in display device.
Background technology
Display device, such as liquid crystal display device, with its display quality it is high, cheap, it is easy to carry the advantages of, turn into
The display device of mobile communication equipment, PC, TV etc..Refer to Fig. 1 and Fig. 2, current display device successively shape on array base palte
Into the first metal layer 120, dielectric layer 130, second metal layer 140, the first metal layer 120 is for example including scan line, film crystal
The grid of pipe；Second metal layer 140 is for example including data wire, the source electrode of thin film transistor (TFT) and drain electrode.In processing procedure, if dielectric
There is conductive particle foreign matter (being illustrated in particle, Fig. 1 and Fig. 2 by taking conductive particle foreign matter as an example) or small in layer 130
Hole (aperture can be produced by removing particle foreign matter, and the metal material of second metal layer is flowed in aperture), causes the first metal layer 120
With the short circuit of second metal layer 140, so as to cause such a liquid crystal display device to scrap, cost is improved.
The content of the invention
Technical problem to be solved of the embodiment of the present invention is to repair metal level short circuit in display device there is provided a kind of
Method.The short circuit of display device can be improved.
In order to solve the above-mentioned technical problem, metal level short circuit in display device is repaired the embodiments of the invention provide a kind of
Method, including：
The first metal layer is formed on array base palte；
Dielectric layer is formed on the first metal layer；
Deposition forms initial metal layer on the dielectric layer；
Photoresist layer is formed in the initial metal layer；
Exposure, development remove the part photoresist layer；
Obtain the information of the first metal layer and the flaw point of initial metal layer short circuit；
Remove the photoresist layer on the flaw point；
The initial metal layer is etched to form second metal layer.
In an embodiment of the present invention, the dielectric layer includes insulating barrier, or, the dielectric layer includes insulating barrier and half
Conductor layer.
In an embodiment of the present invention, the photoresist layer removed on flaw point is destroyed by laser.
In an embodiment of the present invention, the laser is projected from the photoresist layer away from the array base palte side.
In an embodiment of the present invention, it is described etching initial metal layer to form second metal layer the step of specifically include：
Etch the initial metal layer at the flaw point；
Etch in addition at the flaw point and the initial metal layer that is not covered by the photoresist layer is to form second
Metal level.
In an embodiment of the present invention, there is conductive particle foreign matter at the flaw point；Or exist at the flaw point
Initial metal layer, the initial metal layer is electrically connected with the first metal layer, the initial metal layer and second metal
Layer disconnects.
In an embodiment of the present invention, the first metal layer includes scan line, the grid of thin film transistor (TFT) and/or with sweeping
Metal routing of the line with layer is retouched, the second metal layer includes data wire, the source electrode of thin film transistor (TFT), the drain electrode of thin film transistor (TFT)
And/or with metal routing of the data wire with layer.
In an embodiment of the present invention, the display device includes gate drivers, and the gate drivers are located at array
On substrate, the flaw point is located at the region where gate drivers.
In an embodiment of the present invention, the photoresistance is positive photoresistance.
In an embodiment of the present invention, methods described also includes：
Passivation layer is formed in second metal layer；
Pixel electrode layer is formed over the passivation layer.
Implement the embodiment of the present invention, have the advantages that：
Because the method for metallic circuit short circuit in repairing display device includes：Obtain the first metal layer and initial metal layer is short
The information of the flaw point on road, removes the photoresist layer on flaw point, etches initial metal layer to form second metal layer.So as to, the
Repairing has been carried out in short circuit between one metal level and second metal layer, so that such a display device can also continue to use,
So as to reduce cost.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of prior art the first metal layer and second metal layer short circuit；
Fig. 2 is the sectional view of prior art the first metal layer and second metal layer short circuit；
Fig. 3 is the flow chart of metal level short-circuiting method in one embodiment of the invention repairing display device；
Fig. 4 is the sectional view of S104 steps in corresponding diagram 3；
Fig. 5 is the sectional view of S105 steps in corresponding diagram 3；
Fig. 6 is the sectional view of S107 steps in corresponding diagram 3；
Fig. 7 is the sectional view of S108 steps in corresponding diagram 3；
Fig. 8 is the schematic diagram after one embodiment of the invention the first metal layer and second metal layer repairing；
Shown by reference numeral：
110th, 210- array base paltes；120th, 220- the first metal layers；130th, 230- dielectric layers；131st, 231- gate insulators
Layer；132nd, 232- semiconductor layers；140th, 240- second metal layers (initial metal layer)；180th, 280- particles foreign matter.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The term " comprising " and " having " occurred in present specification, claims and accompanying drawing and their any changes
Shape, it is intended that covering is non-exclusive to be included.For example contain the process of series of steps or unit, method, system, product or
The step of equipment is not limited to list or unit, but alternatively also include the step of do not list or unit, or it is optional
Ground is also included for the intrinsic other steps of these processes, method, product or equipment or unit.In addition, term " first ", " the
Two " and " the 3rd " etc. be, for distinguishing different objects, and to be not intended to describe specific order.
The embodiment of the present invention provides a kind of method for repairing metal level short circuit in display device, refers to Fig. 3-Fig. 8, wraps
Include：
S101:The first metal layer 220 is formed on array base palte 210；
In the present embodiment, the array base palte 210 can be glass substrate, or the substrate of other materials, example
Such as flexible base board, plastic base.In the present embodiment, the first metal layer 220 includes scan line, the grid of thin film transistor (TFT)
Pole and/or with scan line with metal routing of layer etc..But it is in other embodiments of the invention, described the invention is not restricted to this
The first metal layer includes data wire and/or with data wire with metal routing of layer etc..
S102:Dielectric layer 230 is formed on the first metal layer 220；
In the present embodiment, the dielectric layer 230 includes gate insulator 231, semiconductor layer 232, but the present invention is not limited
In this, in other embodiments of the invention, the dielectric layer can also only include gate insulator 231 or other insulation
Layer.In the present embodiment, due to processing procedure, there may be in the insulating barrier conductive particle foreign matter 280 (particle,
Illustrated in diagram by taking particle foreign matter as an example) or aperture (generation aperture or other reasonses production after particle foreign matter 280 removes
Raw aperture), these positions are exactly the position for the flaw point being subsequently noted.
S103：Initial metal layer 240 is deposited on dielectric layer 230；
In the present embodiment, initial metal layer 240 is deposited on dielectric layer 230, the initial metal layer 240 is one whole
Layer, the material of the initial metal layer 240 is, for example, molybdenum, aluminium or alloy material.If there is particle foreign matter on dielectric layer 230
280, particle foreign matter 280 may be conductive, so as to cause the first metal layer 220 and the short circuit of initial metal layer 240；If dielectric layer
There is aperture on 230, then when depositing initial metal layer 240, initial metal layer 240 can be filled to aperture, so as to cause just
Beginning metal level 240 and the short circuit of the first metal layer 220, those short-circuit places are the position of flaw point.
S104：Photoresist layer is formed in initial metal layer 240；
Refer to Fig. 4, in order to be patterned to initial metal layer 240, in the present embodiment in initial metal layer 240 shape
Into photoresist layer, the photoresist layer is positive photoresistance.The photoresist layer forms a flood in initial metal layer 240.When the flaw
When point has particle foreign matter 280, the photoresist layer slightly can up arch up in the position of flaw point, when the flaw point is to deposit
In aperture, the photoresist layer can be slight to sinking in the position of flaw point.
S105:Exposure, development remove part photoresist layer；
In the present embodiment, Fig. 5 is referred to, by setting light shield (mask) above photoresist layer, photoresist layer is exposed
Light, followed by develops, so that part photoresist layer is removed with to photoresistance pattern layers, it is convenient follow-up to initial metal layer 240
Patterning.
S106：Obtain the information of the first metal layer 220 and the flaw point of the short circuit of initial metal layer 240；
In order to repair the first metal layer 220 and the short circuit of initial metal layer 240, it is necessary to obtain the first metal layer 220 and initial
The information of the flaw point of the short circuit of metal level 240, the information is the positional information of flaw point.The information of the flaw point can pass through inspection
Survey board automatic detection to obtain, can also be obtained by manual identified.
S107：Remove the photoresist layer on flaw point；
Fig. 6 is referred to, due to also there is photoresist layer on some flaw points, in order to prevent two layers of gold medal in final display device
Belong to the short circuit of layer, in the present embodiment, the photoresist layer removed on flaw point can be destroyed by laser, and laser destroys photoresist layer ratio
Relatively precisely, scope also compares concentration, and effect is preferable, and cost is relatively low.In the present embodiment, the laser is away from photoresistance
The side of array base palte 210 is projected, namely is projected from the upside in diagram.In the present embodiment, destroyed by laser on flaw point
Photoresist layer can automatically be destroyed by machine, can also be by manually destroying.
S108：Initial metal layer 240 is etched to form second metal layer 240；
Fig. 7 and Fig. 8 are referred to, in the present embodiment, etching initial metal layer 240 is described to form second metal layer 240
Second metal layer 240 include data wire, the source electrode of thin film transistor (TFT), the drain electrode of thin film transistor (TFT) and/or with data wire with layer
Metal routing etc..In other embodiments of the invention, the second metal layer includes pixel electrode layer and/or and pixel electrode
Layer is with metal routing of layer etc..In the present embodiment, because the photoresist layer on flaw point is removed, so that initial at flaw point
Metal level 240 is etched or disconnected with the other parts of initial metal layer 240, namely is disconnected with second metal layer 240, from
And the electric signal on the first metal layer 220 will not be passed in second metal layer 240 via flaw point, in second metal layer 240
Electric signal will not be also passed on the first metal layer 220 via flaw point, so as to repair the first metal layer 220 and second metal layer
240 short circuit, so that such a display device can also be used normally, reduces production cost.In the present embodiment, original metal
The etching of layer 240 can be etched with first procedure and processing procedure can also be etched in two times, when first procedure is etched, the flaw
The initial metal layer 240 of fault and the initial metal layer 240 do not blocked by photoresistance can be to be etched in same processing procedure；Make twice
When journey is etched, the initial metal layer 240 (photoresistance at flaw point is not destroyed also) do not blocked by photoresistance is etched first,
Thereafter, the photoresistance at flaw point is removed, then the initial metal layer 240 at flaw point is etched.And then, in this reality
Apply in example, the step of etching initial metal layer 240 specifically includes：
Etch the initial metal layer 240 at flaw point；
In the present embodiment, by etching the initial metal layer 240 at flaw point, so as to repair the first metal layer
220 and the short circuit of second metal layer 240 that is subsequently formed.
Etch in addition at flaw point and the initial metal layer 240 that is not covered by photoresistance is to form second metal layer 240.
In the present embodiment, by etching the initial metal layer 240 not covered in addition at flaw point and by photoresistance to scheme
Case initial metal layer 240, to form second metal layer 240.
In the present embodiment, because the method for metallic circuit short circuit in repairing display device includes：Obtain the first metal layer
220 with the information of the flaw points of the short circuit of initial metal layer 240, remove the photoresist layer on flaw point, etching initial metal layer 240 with
Form second metal layer 240.So as to, repairing has been carried out in the short circuit between the first metal layer 220 and second metal layer 240,
So as to which such a display device can also continue to use, so as to reduce cost.
Current liquid crystal display device actuation techniques are gradually intended to use GOA technologies, and GOA technologies can simplify display device
Production process, saves engagement (bonding) technique of scan-line direction, production capacity, reduction product cost can be lifted, while can carry
The integrated level for rising display panel is allowed to be more suitable for making narrow frame or Rimless display product, and the vision for meeting modern people is chased after
Ask.GOA technologies, i.e. Gate Driver on Array technologies, that is, gate drivers are produced on array base palte 210,
In the present embodiment, the flaw point is located at the region where gate drivers.
In the present embodiment, methods described also includes：Passivation layer is formed in second metal layer 240；Thereafter, in addition to：
Pixel electrode layer is formed over the passivation layer.
It is not limited to and said sequence in addition, in the present embodiment, the step of above-mentioned steps S101-S109, for example, S106,
S107 can be located at before S105.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment weight
Point explanation be all between difference with other embodiments, each embodiment identical similar part mutually referring to.
For device embodiment, because it is substantially similar to embodiment of the method, so description is fairly simple, related part referring to
The part explanation of embodiment of the method.
By the description of above-described embodiment, the present invention has advantages below：
Because the method for metallic circuit short circuit in repairing display device includes：Obtain the first metal layer and initial metal layer is short
The information of the flaw point on road, removes the photoresist layer on flaw point, etches initial metal layer to form second metal layer.So as to, the
Repairing has been carried out in short circuit between one metal level and second metal layer, so that such a display device can also continue to use,
So as to reduce cost.
Above disclosure is only preferred embodiment of present invention, can not limit the right model of the present invention with this certainly
Enclose, therefore the equivalent variations made according to the claims in the present invention, still belong to the scope that the present invention is covered.
Claims (10)
1. a kind of method for repairing metal level short circuit in display device, it is characterised in that including：
The first metal layer is formed on array base palte；
Dielectric layer is formed on the first metal layer；
Deposition forms initial metal layer on the dielectric layer；
Photoresist layer is formed in the initial metal layer；
Exposure, development remove the part photoresist layer；
Obtain the information of the first metal layer and the flaw point of initial metal layer short circuit；
Remove the photoresist layer on the flaw point；
The initial metal layer is etched to form second metal layer.
2. the method for metal level short circuit in display device is repaired as claimed in claim 1, it is characterised in that the dielectric layer bag
Insulating barrier is included, or, the dielectric layer includes insulating barrier and semiconductor layer.
3. the method for metal level short circuit in display device is repaired as claimed in claim 1, it is characterised in that removed on flaw point
Photoresist layer be to be destroyed by laser.
4. as claimed in claim 3 in repairing display device metal level short circuit method, it is characterised in that the laser is from institute
Photoresist layer is stated to project away from the array base palte side.
5. the method for metal level short circuit in display device is repaired as claimed in claim 1, it is characterised in that the etching is initial
The step of metal level is to form second metal layer specifically includes：
Etch the initial metal layer at the flaw point；
Etch in addition at the flaw point and the initial metal layer that is not covered by the photoresist layer is to form the second metal
Layer.
6. the method for metal level short circuit in display device is repaired as claimed in claim 1, it is characterised in that at the flaw point
There is conductive particle foreign matter；Or there is initial metal layer, the initial metal layer and first metal at the flaw point
Layer electrical connection, the initial metal layer disconnects with the second metal layer.
7. the method for metal level short circuit in display device is repaired as claimed in claim 1, it is characterised in that first metal
Layer include scan line, the grid of thin film transistor (TFT) and/or with metal routing of the scan line with layer, the second metal layer include number
According to line, the source electrode of thin film transistor (TFT), the drain electrode of thin film transistor (TFT) and/or with metal routing of the data wire with layer.
8. the method for metal level short circuit in display device is repaired as claimed in claim 1, it is characterised in that the display device
Including gate drivers, the gate drivers are located on array base palte, and the flaw point is located at the area where gate drivers
Domain.
9. the method for metal level short circuit in display device is repaired as claimed in claim 1, it is characterised in that the photoresistance is just
Photoresistance.
10. the method for metal level short circuit in display device is repaired as claimed in claim 1, it is characterised in that methods described is also
Including：
Passivation layer is formed in second metal layer；
Pixel electrode layer is formed over the passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710413880.9A CN107170709B (en) | 2017-06-05 | 2017-06-05 | Method for repairing short circuit of metal layer in display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710413880.9A CN107170709B (en) | 2017-06-05 | 2017-06-05 | Method for repairing short circuit of metal layer in display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107170709A true CN107170709A (en) | 2017-09-15 |
| CN107170709B CN107170709B (en) | 2020-05-05 |
Family
ID=59824634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710413880.9A Active CN107170709B (en) | 2017-06-05 | 2017-06-05 | Method for repairing short circuit of metal layer in display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107170709B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1115497A (en) * | 1994-07-07 | 1996-01-24 | 现代电子产业株式会社 | Method for repairing a defect-generated cell using a laser |
| KR20060075971A (en) * | 2004-12-29 | 2006-07-04 | 주식회사 하이닉스반도체 | Method for fabrication of semiconductor device capable of increasing overlay margin |
| CN102386331A (en) * | 2010-09-03 | 2012-03-21 | 索尼公司 | Method of manufacturing electronic element and electronic element |
| US20130328020A1 (en) * | 2012-06-08 | 2013-12-12 | Yul-Kyu Lee | Method of repairing short circuit defect, and display apparatus and organic light emitting display apparatus manufactured according to the repairing method |
| CN106711028A (en) * | 2016-12-21 | 2017-05-24 | 惠科股份有限公司 | Method and device for repairing transistor |
-
2017
- 2017-06-05 CN CN201710413880.9A patent/CN107170709B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1115497A (en) * | 1994-07-07 | 1996-01-24 | 现代电子产业株式会社 | Method for repairing a defect-generated cell using a laser |
| KR20060075971A (en) * | 2004-12-29 | 2006-07-04 | 주식회사 하이닉스반도체 | Method for fabrication of semiconductor device capable of increasing overlay margin |
| CN102386331A (en) * | 2010-09-03 | 2012-03-21 | 索尼公司 | Method of manufacturing electronic element and electronic element |
| US20130328020A1 (en) * | 2012-06-08 | 2013-12-12 | Yul-Kyu Lee | Method of repairing short circuit defect, and display apparatus and organic light emitting display apparatus manufactured according to the repairing method |
| CN106711028A (en) * | 2016-12-21 | 2017-05-24 | 惠科股份有限公司 | Method and device for repairing transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107170709B (en) | 2020-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8023054B2 (en) | Flat panel display and fabricating method thereof | |
| CN106783876B (en) | The production method and COA substrate of COA substrate | |
| CN103560110B (en) | A kind of array base palte and preparation method thereof, display unit | |
| CN105304649A (en) | Array substrate and making method thereof, display panel and display device | |
| CN104157613B (en) | A kind of preparation method of array base palte | |
| CN106226966A (en) | Array base palte and manufacture method, display floater and defect-restoration method therefor thereof | |
| CN104157696B (en) | Thin film transistor and preparation method thereof, as well as array baseplate and liquid crystal display device | |
| CN103311220A (en) | Circuit repair structure and method | |
| CN107808886A (en) | Cross hole connection structure and manufacture method, array base palte and manufacture method, display device | |
| CN109459894A (en) | Pixel electrode structure and preparation method thereof | |
| CN107195635A (en) | Thin-film transistor array base-plate and preparation method thereof | |
| CN105655405A (en) | Pixel structure, manufacturing method thereof and thin film transistor | |
| CN109061914B (en) | Manufacturing method of display substrate, display substrate and display device | |
| CN100583458C (en) | Pixel structure, thin-film transistor and production method thereof | |
| CN106876260A (en) | Gate electrode structure, manufacturing method thereof and display device | |
| CN109494257A (en) | A kind of thin film transistor (TFT) and its manufacturing method, array substrate, display device | |
| CN107359138A (en) | A kind of metal wire, the preparation method of array base palte and array base palte | |
| CN102723309B (en) | Array substrate and manufacturing method thereof as well as display device | |
| CN102798999A (en) | Array substrate cross curve repairing method, array substrate and liquid crystal display | |
| CN105448936B (en) | A kind of array substrate and preparation method thereof, display device | |
| CN104617049B (en) | A kind of array base palte and preparation method thereof, display device | |
| CN108227324B (en) | Test key and test method for broken line repair and broken line repair method | |
| CN107170709A (en) | The method for repairing metal level short circuit in display device | |
| CN102637698B (en) | Array substrate and preparation method thereof | |
| CN103838047B (en) | Array substrate, manufacturing method thereof and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |