CN107161945A - A kind of AT cut types quartz wafer MEMS processing methods - Google Patents
A kind of AT cut types quartz wafer MEMS processing methods Download PDFInfo
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- CN107161945A CN107161945A CN201710372397.0A CN201710372397A CN107161945A CN 107161945 A CN107161945 A CN 107161945A CN 201710372397 A CN201710372397 A CN 201710372397A CN 107161945 A CN107161945 A CN 107161945A
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- quartz wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Dicing (AREA)
Abstract
The invention discloses a kind of AT cut types quartz wafer MEMS processing methods, comprise the following steps：Quartz wafer is ground and polishing；Quartz wafer top layer evaporation plating after a polish or magnetron sputtering Au films；Dual coating photoresist, double-sided alignment makes figure using the exposure of light shield mask plate；It is rear to dry processing solidification figure to the quartz wafer development after exposure；Etched by Au etching solutions to not being photo-etched figure protection zone, remove unnecessary Au films；Au thin membrane regions center is removed to chemical wet etching using laser and carries out cutting operation；Quartz wafer after cutting enter by HF and
Description
Technical field
The present invention relates to quartz wafer manufacture field, and in particular to a kind of AT cut types quartz wafer MEMS processing methods.
Background technology
Quartz-crystal resonator is widely used in mobile electronic device, hand because of characteristics such as the Stability and veracities of its frequency
The electronics industry such as machine, mobile communications device, AT cuts the core component that quartz wafer is quartz-crystal resonator.Quartz wafer is usual
Using wire cutting, grinding, viscous stick together, cut into slices, repair size, change the manufacture completion of the multiple working procedures such as glue, barreling, sorting, corrosion.
With developing rapidly for mobile communication electronics, device miniaturization demand more and more higher.Therefore, quartz wafer is small-sized
It is imperative to change.In the process that quartz wafer is minimized, traditional handicraft qualification rate is low, and cost is high.
The techniques such as traditional slitting, sorting, corrosion are difficult to microminiature quartz wafer, can not meet miniaturization
It is required that.Microminiature chip diminishes because of the length and width of chip, repaiies dimension process and the chip of bonding easily is ground into scattered.Because the area of chip becomes
It is small, the problem of easily there is few piece in sorting.
The content of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of AT cut types quartz wafer MEMS processing sides
Method, available for miniaturization AT cut type quartz wafers batch-type production.
The purpose of the present invention is achieved through the following technical solutions：
A kind of AT cut types quartz wafer MEMS processing methods, comprise the following steps：
S01：Quartz wafer is ground and polishing；
S02：Quartz wafer top layer evaporation plating after a polish or magnetron sputtering Au films；
S03：Dual coating photoresist, double-sided alignment makes figure using the exposure of light shield mask plate；
S04：It is rear to dry processing solidification figure to the quartz wafer development after exposure；
S05：Etched by Au etching solutions to not being photo-etched figure protection zone, remove unnecessary Au films；
S06：Au thin membrane regions center is removed to chemical wet etching using laser and carries out cutting operation；
S07：Quartz wafer after cutting enter by HF andMix in the corrosive liquid of composition and corrode, figure is by Au after corrosion
Litho pattern is determined；
S08：Remove photoresist layer, Au film layers.
As the further improvement of this programme, the thickness 50-300nm of Au films is plated in described step S02.
As the further improvement of this programme, figure double-sided alignment precision ＜ 5um, light exposure in described step S03
（30-60）mj/cm2.
As the further improvement of this programme, developing time is 10 minutes in described step S04, and rear temperature of drying is 140
℃。
As the further improvement of this programme, cutting zone width 20-100um in described step S06 uses PS
Laser, its focal length is that 0.1 ~ 1um, power are 100 ~ 300uw.
As the further improvement of this programme, corrosive liquid HF in described step S07 andProportioning be 1:（1-
3）.
As the further improvement of this programme, the etching time in described step S07 is 6 hours.
As the further improvement of this programme, the method fine setting quartz-crystal using corrosion after all machine is additionally included in
Piece frequency.
The beneficial effects of the invention are as follows：Quartz wafer MEMS processing methods proposed by the present invention are the tables in quartz substrate
Face is processed, and is solved after reducing because of chip length and width, the problem of machining is difficult, mainly for the production of 1612/1210 and with
Lower specification quartz wafer.Using this method, production efficiency can be increased substantially, production cost is reduced.With other quartz wafers
MEMS processing methods are contrasted, and this method carries out preprocessing using laser to Y' directions, solves AT cut type X and Z' to corrosion rate
Higher than Y' to the problem of traditional MEMS corrosion efficiency is low caused by corrosion rate.And after preprocessing, processed using etching process
Profile, therefore product design, by litho pattern control, Product Precision is protected, dimensional tolerance is within ± 3um.
Embodiment
Technical scheme is described below in detail, but protection scope of the present invention be not limited to it is as described below.
【Embodiment 1】
1612 specification 37.4MHz nominal frequency chips are manufactured, crystal bar are cut using wire cutting technology first, then by well cutting
3inch quartz substrates are ground and are polished to 38500KHz, and MEMS processing is carried out afterwards：
In the evaporation plating of 3inch polishing quartz substrates top layer or magnetron sputtering Au, thickness 200nm；
Quartz substrate dual coating photoresist after plating Au, figure is made using the exposure of light shield mask plate（Wafer size
1.05mm*0.78mm）, double-sided alignment precision the ＜ 5um, light exposure 40mj/cm2 of figure；
Development 10min is carried out to quartz substrate after exposure, it is rear to dry 140 DEG C of processing solidification figures of temperature.
Using Au etching solutions to not being photo-etched the etching of figure protection zone.
Cutting operation, cutting zone width 80um are carried out to chemical wet etching regional center position using laser.
Quartz wafer after cutting will be completed, be put into corrosive liquid and corrode 6h, corrosive liquid is by 1:1 HF andMixing and
Into.
Remove photoresist layer, Au film layers.
Terminate after MEMS technology, quartz wafer is entered after line frequency sorting, quartz wafer frequency is finely tuned using the method for corrosion
Rate completes the processing of quartz wafer to 39000KHz.
【Embodiment 2】
1210 specification 38.4MHz nominal frequency chips are manufactured, crystal bar are cut using wire cutting technology first, then by well cutting
2inch quartz substrates are ground and are polished to 39500KHz, and MEMS processing is carried out afterwards：
In the evaporation plating of 2inch polishing quartz substrates top layer or magnetron sputtering Au, thickness 170nm；
Quartz substrate dual coating photoresist after plating Au, figure is made using the exposure of light shield mask plate（Wafer size
0.8mm*0.64mm）, double-sided alignment precision the ＜ 5um, light exposure 50mj/cm2 of figure；
Development 10min is carried out to quartz substrate after exposure, it is rear to dry 140 DEG C of processing solidification figures of temperature.
Using Au etching solutions to not being photo-etched the etching of figure protection zone.
Cutting operation, cutting zone width 50um are carried out to chemical wet etching regional center position using laser.
Quartz wafer after cutting will be completed, be put into corrosive liquid and corrode 6h, corrosive liquid is by 1:1.5 HF andMixing
Form.
Remove photoresist layer, Au film layers.
Terminate after MEMS technology, quartz wafer is entered after line frequency sorting, quartz wafer frequency is finely tuned using the method for corrosion
Rate completes the processing of quartz wafer to 40100KHz.
It is emphasized that the quartz substrate in the present embodiment uses AT cut types, but it is not limited to AT cut types.
Described above is only the preferred embodiment of the present invention, it should be understood that the present invention is not limited to described herein
Form, is not to be taken as the exclusion to other embodiment, and available for various other combinations, modification and environment, and can be at this
In the text contemplated scope, it is modified by the technology or knowledge of above-mentioned teaching or association area.And those skilled in the art are entered
Capable change and change does not depart from the spirit and scope of the present invention, then all should appended claims of the present invention protection domain
It is interior.
Claims (8)
1. a kind of AT cut types quartz wafer MEMS processing methods, it is characterised in that comprise the following steps：
S01：Quartz wafer is ground and polishing；
S02：Quartz wafer top layer evaporation plating after a polish or magnetron sputtering Au films；
S03：Dual coating photoresist, double-sided alignment makes figure using the exposure of light shield mask plate；
S04：It is rear to dry processing solidification figure to the quartz wafer development after exposure；
S05：Etched by Au etching solutions to not being photo-etched figure protection zone, remove unnecessary Au films；
S06：Au thin membrane regions center is removed to chemical wet etching using laser and carries out cutting operation；
S07：Quartz wafer after cutting enter by HF andMix in the corrosive liquid of composition and corrode, figure is by Au after corrosion
Litho pattern is determined；
S08：Remove photoresist layer, Au film layers.
2. a kind of AT cut types quartz wafer MEMS processing methods according to claim 1, it is characterised in that：Described step
The thickness 50-300nm of Au films is plated in S02.
3. a kind of AT cut types quartz wafer MEMS processing methods according to claim 1, it is characterised in that：Described step
Figure double-sided alignment precision ＜ 5um, light exposure in S03（30-50）mj/cm2.
4. a kind of AT cut types quartz wafer MEMS processing methods according to claim 1, it is characterised in that：Described step
Developing time is 10 minutes in S04, and rear temperature of drying is 140 DEG C.
5. a kind of AT cut types quartz wafer MEMS processing methods according to claim 1, it is characterised in that：Described step
Cutting zone width 20-100um in S06, uses PS lasers, and its focal length is that 0.1 ~ 1um, power are 100 ~ 300uw.
6. a kind of AT cut types quartz wafer MEMS processing methods according to claim 1, it is characterised in that：Described step
Corrosive liquid HF in S07 andProportioning be 1:（1-3）.
7. a kind of AT cut types quartz wafer MEMS processing methods according to claim 1, it is characterised in that：Described step
Etching time in S07 is 6 hours.
8. a kind of AT cut types quartz wafer MEMS processing methods according to claim 1, it is characterised in that：It is additionally included in institute
There is the method fine setting quartz wafer frequency using corrosion after machining.
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| CN201710372397.0A CN107161945B (en) | 2017-05-24 | 2017-05-24 | A kind of AT cut type quartz wafer MEMS processing method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108055016A (en) * | 2017-12-29 | 2018-05-18 | 应达利电子股份有限公司 | The production method of small-sized quartz wafer with low ESR |
| CN108231999A (en) * | 2017-12-29 | 2018-06-29 | 唐山国芯晶源电子有限公司 | The processing method of quartz resonator chip |
| CN111058095A (en) * | 2019-12-12 | 2020-04-24 | 南京中电熊猫晶体科技有限公司 | Corrosion etching method of subminiature quartz wafer |
| CN111074227A (en) * | 2019-11-21 | 2020-04-28 | 南京中电熊猫晶体科技有限公司 | Film coating method for compensating single-side etching asymmetry |
| CN112758885A (en) * | 2020-12-25 | 2021-05-07 | 中国电子科技集团公司第十三研究所 | Cutting method of MEMS (micro-electromechanical systems) special-shaped chip |
| CN113463027A (en) * | 2021-06-22 | 2021-10-01 | 泰晶科技股份有限公司 | Wax spraying method for reducing corrosion scattering of quartz WAFER sheet |
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| CN103058126A (en) * | 2012-11-30 | 2013-04-24 | 北京遥测技术研究所 | Processing method for surface electrodes of three-dimensional quartz micro-mechanical structure |
| TW201324608A (en) * | 2011-12-05 | 2013-06-16 | Nat Applied Res Laboratories | Method and apparatus of photoresist layer structure used in manufacturing nano-scale patterns |
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| TW201324608A (en) * | 2011-12-05 | 2013-06-16 | Nat Applied Res Laboratories | Method and apparatus of photoresist layer structure used in manufacturing nano-scale patterns |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108055016A (en) * | 2017-12-29 | 2018-05-18 | 应达利电子股份有限公司 | The production method of small-sized quartz wafer with low ESR |
| CN108231999A (en) * | 2017-12-29 | 2018-06-29 | 唐山国芯晶源电子有限公司 | The processing method of quartz resonator chip |
| CN111074227A (en) * | 2019-11-21 | 2020-04-28 | 南京中电熊猫晶体科技有限公司 | Film coating method for compensating single-side etching asymmetry |
| CN111058095A (en) * | 2019-12-12 | 2020-04-24 | 南京中电熊猫晶体科技有限公司 | Corrosion etching method of subminiature quartz wafer |
| CN112758885A (en) * | 2020-12-25 | 2021-05-07 | 中国电子科技集团公司第十三研究所 | Cutting method of MEMS (micro-electromechanical systems) special-shaped chip |
| CN113463027A (en) * | 2021-06-22 | 2021-10-01 | 泰晶科技股份有限公司 | Wax spraying method for reducing corrosion scattering of quartz WAFER sheet |
| CN113463027B (en) * | 2021-06-22 | 2022-07-29 | 泰晶科技股份有限公司 | Wax spraying method for reducing corrosion scattering of quartz WAFER sheet |
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| CN107161945B (en) | 2019-02-22 |
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Address after: No. 136, Tianying Road, high tech Zone, Chengdu, Sichuan 610000 Patentee after: CHENGDU TIMEMAKER CRYSTAL TECHNOLOGY Co.,Ltd. Address before: 610017 No. 103 Tianying Road, West Park of Chengdu High-tech Zone, Sichuan Province Patentee before: CHENGDU TIMEMAKER CRYSTAL TECHNOLOGY Co.,Ltd. |
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Denomination of invention: A MEMS processing method for AT-cut quartz wafer Effective date of registration: 20230221 Granted publication date: 20190222 Pledgee: Bank of Shanghai Limited by Share Ltd. Chengdu branch Pledgor: CHENGDU TIMEMAKER CRYSTAL TECHNOLOGY Co.,Ltd. Registration number: Y2023510000055 |