CN107146851A - 一种制备CH3NH3PbI3钙钛矿薄膜的方法 - Google Patents

一种制备CH3NH3PbI3钙钛矿薄膜的方法 Download PDF

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CN107146851A
CN107146851A CN201710177116.6A CN201710177116A CN107146851A CN 107146851 A CN107146851 A CN 107146851A CN 201710177116 A CN201710177116 A CN 201710177116A CN 107146851 A CN107146851 A CN 107146851A
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thin film
leaded
lead oxide
perovskite
perovskite thin
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楚亮
李兴鳌
毛巍威
王兴福
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Nanjing Post and Telecommunication University
Nanjing University of Posts and Telecommunications
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    • HELECTRICITY
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    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • HELECTRICITY
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    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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Abstract

本发明公开了一种大面积规模化制备CH3NH3PbI3钙钛矿薄膜的方法,主要涉及稳定的钙钛矿前驱体浆料以及丝网印刷技术和氧化铅与甲胺碘溶液反应生成钙钛矿。制备含铅的纳米结构,随后制备成稳定的浆料,丝网印刷薄膜结合随后的退火工艺,形成氧化铅薄膜,在氧化铅薄膜与甲氨碘溶液反应生成钙钛矿薄膜。

Description

一种制备CH3NH3PbI3钙钛矿薄膜的方法
技术领域
本发明涉及一种制备CH3NH3PbI3钙钛矿薄膜的方法,属于稳定的钙钛矿前驱体浆料以及丝网印刷技术领域。
背景技术
钙钛矿CH3NH3PbX3(X=Cl,Br,I)具有近似完美的晶体结构、能级可调、极高的光吸收系数和载粒子迁移率等优点,在太阳能电池、发光二极管、光电探测等领域展示出优异的性能。钙钛矿CH3NH3PbX3(X=Cl,Br,I)材料是近年来的一个热点。但目前制备钙钛矿薄膜主要是用到旋涂法或者蒸镀法。旋涂法只适合制备小面积的钙钛矿薄膜,无法进行大规模化和大面积的生产,是制约钙钛矿器件发展的一个障碍。蒸镀法似乎适合大面积制备钙钛矿薄膜,但蒸镀法的成本高,需要高的真空和大型的设备。如何低成本的实现钙钛矿薄膜的制备,一直是一个重要的技术和科学问题。
丝网印刷制备薄膜材料具有用量节省、工艺简单,便于大规模生产等优点。无论在工业制备,还是在科学技术研究中,丝网印刷都是制备薄膜材料的一种有效方法。采用丝网印刷在空气环境中制备钙钛矿薄膜一种是一个期待。目前主要缺乏在室温空气环境中稳定的钙钛矿前驱体浆料。
因此,实现丝网印刷大规模制备钙钛矿薄膜,对开发大面积钙钛矿器件,推动钙钛矿器件,尤其是钙钛矿太阳能电池的商业化,意义重大。
发明内容
本发明所要解决的技术问题是:制备含铅元素的纳米颗粒稳定存在的浆料,提供一种满足应用丝网印刷钙钛矿薄膜的设计及其制造方法。
本发明解决其技术问题采用以下的技术方案:
(1)在溶液中,以铅盐(如Pb(NO3)2)为原料,加入还原剂,随后加入氧化剂,生成含铅纳米结构颗粒;制备含铅的纳米结构,如纳米颗粒等。还原剂与Pb的摩尔比为1~5:1,氧化剂的比例为1~5:1。
(2)将上述纳米颗粒与一定量的粘稠剂(如乙基纤维素)和溶剂(如松油醇和乙醇等)混合,搅拌均匀,研磨,配制成浆料,与铅的所占质量比1~6:10。
(3)将上述浆料丝网印刷在基底上(如FTO导电透明玻璃)。退火形成氧化铅薄膜,其中退火温度设定在300~450度之间;
(4)氧化铅薄膜薄膜沉浸在甲氨碘的异丙醇溶液中,生成黑色的钙钛矿薄膜,其中甲氨碘的浓度为1~10mM。
有益效果
与现有技术相比具有以下主要的优点:制作工艺简单、成本低和适合大规模应用。
附图说明
图1.氧化铅薄膜的XRD图片。
图2.(a,b)氧化铅薄膜的SEM图片(c,d)氧化铅的TEM图片,(e)氧化铅的高分辨TEM图片,插图为对于的选区电子衍射图片。
图3.不同甲胺碘浓度下(1.5,3.0,6.0mM)生成钙钛矿的XRD图片。
具体实施方式
下面结合附图和具体实施例对本发明作进一步详细说明。
一种大面积规模化钙钛矿薄膜的制备方法,主要涉及稳定的钙钛矿前驱体浆料、丝网印刷技术和氧化铅与甲胺碘直接反应生产钙钛矿。
其具体步骤包括:
(1)在Pb(NO3)2溶液中,逐渐加入NaBH4溶液还原出铅的纳米颗粒,随后加入氧化剂NaClO进一步生成含铅的纳米颗粒。
(2)将上述纳米颗粒与一定量的乙基纤维素和松油醇和乙醇等混合,质量比大概是1:(0.1~0.6):(3~10):(1~10)搅拌均匀,再研磨,配制成浆料。
(3)将上述浆料丝网印刷在基底上(如FTO导电透明玻璃)。退火形成氧化铅薄膜,其中退火温度设定在300~450度之间。如在375度下形成薄膜的XRD如图1所示,其中峰值位置29.12°,32.34°,36.29°,46.22°,49.01°,55.31°,59.76°,60.43°,和65.92°等分别对于斜方晶系的PbO的(111),(020),(002),(220),(202),(003),(222),(113),和(203)晶面,这验证了退火后的产物是氧化铅。峰值位置27.01°,38.29°,51.96°和62.26°等来源于FTO玻璃。图2(a-d)显示了氧化铅薄膜的多孔结构。图2(e)中的晶面距0.281nm和0.312nm分别对应氧化铅的(200)和(111)晶面。插图的选取电子衍射图像,其中的衍射点显示了氧化铅的单晶属性。进一步表明了含铅纳米颗粒退火后的产物为氧化铅。
(4)氧化铅薄膜薄膜沉浸在甲氨碘的异丙醇溶液中,生成黑色的钙钛矿薄膜,其中甲氨碘的浓度为1~10mM,反应时间为10分钟~3小时。从片子背后看基本生成黑色为止。在图3所示的XRD图片中,峰值位置14.66°,28.65°,29.11°,31.44°,32.37°,35.45°,40.04°,41.03°,42.18°,43.17°,43.57°,46.19°,和49.04°分别对应四方空间群I4/mcm钙钛矿CH3NH3PbI3的(140)(110),(004),(220),(213),(222),(204),(224),(400),(215),(006),(411),(332)和(442)晶面,表明了氧化铅可直接与甲胺碘反应生成CH3NH3PbI3钙钛矿。其中峰值位置24.08°,24.92°,和27.03°对应PbI2的(104),(015)和(107)晶面,表明反应的中间产物为PbI2,随后生成CH3NH3PbI3钙钛矿。

Claims (5)

1.一种制备CH3NH3PbI3钙钛矿薄膜的方法,其特征在于,包括如下步骤:
1)在溶液中,以铅盐为原料,制备含铅的纳米结构,加入还原剂,随后加入氧化剂,生成含铅纳米结构颗粒;
(2)将成含铅纳米结构颗粒与一定量的粘稠剂和溶剂混合,搅拌均匀,研磨,配制成浆料;
(3)采用丝网印刷机,将上述浆料印刷在基底上,退火形成氧化铅薄膜,其中退火温度设定在300~450度之间;
(4)氧化铅薄膜静置在甲氨碘的异丙醇溶液中,生成黑色的钙钛矿薄膜,其中甲氨碘的浓度为1~10mM,反应时间为10分钟到3小时。
2.如权利要求1所述的方法,其特征在于,步骤(1)中,所述铅盐为Pb(NO3)2)。
3.根据权利要求1所述的方法,所述步骤(1)中还原剂与Pb的摩尔比为1~5:1,氧化剂的比例为1~5:1。
4.根据权利要求1所述的方法,其特征在于,所述的步骤(2)中,粘稠剂采用乙基纤维素,与含铅纳米颗粒的所占质量比1~6:10,溶剂采用松油醇和乙醇。
5.如权利要求1所述的方法,其特征在于,步骤(3)中,所述基底为FTO导电玻璃。
CN201710177116.6A 2017-03-23 2017-03-23 一种制备CH3NH3PbI3钙钛矿薄膜的方法 Pending CN107146851A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112071991A (zh) * 2020-09-02 2020-12-11 西北工业大学 一种丝网印刷制备钙钛矿薄膜的方法
CN113517364A (zh) * 2021-06-23 2021-10-19 上海应用技术大学 采用印刷法制备无铅双钙钛矿薄膜的方法及应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140332078A1 (en) * 2013-05-09 2014-11-13 National Cheng Kung University Hybrid organic solar cell with perovskite structure as absorption material and manufacturing method thereof
CN104465994A (zh) * 2014-12-09 2015-03-25 厦门惟华光能有限公司 一种基于全涂布工艺的钙钛矿太阳能电池的制备方法
CN105789450A (zh) * 2016-01-29 2016-07-20 杭州众能光电科技有限公司 一种大面积均质有机-无机钙钛矿薄膜的制备方法及其制品和应用

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140332078A1 (en) * 2013-05-09 2014-11-13 National Cheng Kung University Hybrid organic solar cell with perovskite structure as absorption material and manufacturing method thereof
CN104465994A (zh) * 2014-12-09 2015-03-25 厦门惟华光能有限公司 一种基于全涂布工艺的钙钛矿太阳能电池的制备方法
CN105789450A (zh) * 2016-01-29 2016-07-20 杭州众能光电科技有限公司 一种大面积均质有机-无机钙钛矿薄膜的制备方法及其制品和应用

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
K. KANNAN, ET AL.: "Controlled synthesis of highly spherical nano-PbO2 particles and their characterization", 《MATERIALS LETTERS》 *
K. KANNAN, ET AL.: "Fabrication of a Nano-structured PbO2 Electrode by Using Printing Technology: Surface Characterization and Application", 《JOURNAL OF THE KOREAN PHYSICAL SOCIETY》 *
ZHIRONG ZHANG, ET AL.: "CH3NH3PbI3 converted from reactive magnetron sputtered PbO for large area perovskite solar cells", 《SOLAR ENERGY MATERIALS & SOLAR CELLS》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112071991A (zh) * 2020-09-02 2020-12-11 西北工业大学 一种丝网印刷制备钙钛矿薄膜的方法
CN112071991B (zh) * 2020-09-02 2022-02-08 西北工业大学 一种丝网印刷制备钙钛矿薄膜的方法
CN113517364A (zh) * 2021-06-23 2021-10-19 上海应用技术大学 采用印刷法制备无铅双钙钛矿薄膜的方法及应用

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