CN107146787A - A kind of production technology of integrated Surface Mount luminescent device - Google Patents

A kind of production technology of integrated Surface Mount luminescent device Download PDF

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Publication number
CN107146787A
CN107146787A CN201710257580.6A CN201710257580A CN107146787A CN 107146787 A CN107146787 A CN 107146787A CN 201710257580 A CN201710257580 A CN 201710257580A CN 107146787 A CN107146787 A CN 107146787A
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CN
China
Prior art keywords
led chip
substrate
luminescent device
production technology
luminous point
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Application number
CN201710257580.6A
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Chinese (zh)
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CN107146787B (en
Inventor
朱希婕
吴江辉
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Mao Xiuzhong
Shenzhen Zi Guang Intelligent Technology Co., Ltd.
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朱希婕
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Priority to CN201710257580.6A priority Critical patent/CN107146787B/en
Publication of CN107146787A publication Critical patent/CN107146787A/en
Priority to PCT/CN2017/112774 priority patent/WO2018192221A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

Abstract

The invention discloses a kind of production technology of integrated Surface Mount luminescent device, comprise the following steps:Step 1, by several luminous point group array packages on the front of substrate, each luminous point group includes at least one red LED chip, at least one green LED chip and at least one blue-light LED chip, and all LED chips are encapsulated on substrate using COB;Step 2, substrate cut is divided into several independent luminescent devices, provided with a luminous point group in each luminescent device;Step 3, the red LED chip by each luminescent device, green LED chip and blue-light LED chip light test wavelength and brightness value respectively, divide BIN by all luminescent devices according to test data;The forward voltage and reverse leakage current of step 4, each luminescent device of test, choose underproof.The simple production process of the present invention, the luminescent device high resolution of production.

Description

A kind of production technology of integrated Surface Mount luminescent device
Technical field
The present invention relates to emitting components technical field, more particularly to a kind of production technology of integrated Surface Mount luminescent device.
Background technology
Existing light-emitting display device is largely using SMD encapsulation, and SMD encapsulation is by LED chip conducting resinl and insulation Glue is fixed on the pad of lamp bead support, is then carried out LED chip conduction property welding, after that functional test, is used epoxy resin Glue is encapsulated, then is carried out light splitting, cutting and played braid.
This SMD, which is encapsulated, only has single RGB chips in the luminescent device being made, although the packing of single lamp bead singulation easily adds The corner or hexagonal support used in work, but its encapsulation is that follow-up production link brings technical difficulty and reliability hidden danger. When needing production sharpness screen, the dot density that lights increase, luminescent device needs paster to be worked into display screen circuit board On, there are the support pin welding yield issues of substantial amounts in this SMD encapsulating structures, it is impossible to produce sharpness screen.
The content of the invention
In order to solve drawbacks described above present in prior art, the present invention proposes a kind of production of integrated Surface Mount luminescent device Technique, has filled up high definition, the blank of sharpness screen.
The technical solution adopted by the present invention is to design a kind of production technology of integrated Surface Mount luminescent device, including following step Suddenly:
Step 1, by several luminous point group array packages substrate front on, each luminous point group include at least one feux rouges LED chip, at least one green LED chip and at least one blue-light LED chip, all LED chips are encapsulated in substrate using COB On;
Step 2, substrate cut is divided into several independent luminescent devices, provided with a luminous point group in each luminescent device;
Step 3, the red LED chip by each luminescent device, green LED chip and blue-light LED chip light test respectively All luminescent devices are divided BIN by wavelength and brightness value according to test data;
The forward voltage and reverse leakage current of step 4, each luminescent device of test, choose underproof.
Preferably, multiple red LED chips, multiple green LED chips and multiple are included in step 1 in each luminous point group Red LED chip, green LED chip and blue-light LED chip ranks spacing in blue-light LED chip, luminous point group can be arranged arbitrarily Row combination.
It is preferred that, all LED chips are encapsulated or upside-down mounting COB encapsulation using formal dress COB in step 1.
It is preferred that, substrate front side is provided with the pad for packaging LED chips, and the back side of substrate is provided with draws for welding control The pin pad of pin.
It is preferred that, substrate is black double-sided wiring board or multilayer circuit board, and the material of substrate is BT, carbon fiber or FR4.
In the first embodiment, production technology also includes:Step 5, qualified luminescent device arrangement is arranged on high-resolution On the circuit board of rate display screen, mask is covered on circuit boards.
In a second embodiment, in step 2 before cutting substrate, molding sealing first is carried out to substrate, makes the front of substrate Cover the colloid of layer of transparent.It is preferred that, the thickness range of colloid is 0.8mm to 1.2mm.In a second embodiment, work is produced Skill also includes:Step 5, will be qualified and be incorporated into carrier band positioned at the luminescent devices of same BIN scopes, diaphragm is sealed on carrier band.
The present invention is integrated with COB encapsulation and SMD encapsulation technologies, and several RGB primary-color LED chips are encapsulated using COB On substrate, the spacing between LED chip can be adjusted as required, cut into independent light after the completion of LED chip encapsulation again One group of red, green and blue LED chip or multigroup red, green and blue LED can be packaged with device, luminescent device small volume, and a luminescent device Chip, the high resolution of luminescent device, it is adaptable to process high-resolution and high brightness product.
Compared with prior art, LED chip of the invention is encapsulated on substrate using COB, is removed in tradition SMD encapsulation Support, can improve the LED chip quantity in single luminescent device, substrate cut be formed into single luminescent device after encapsulation, then divide It is other that light splitting, test are carried out to luminescent device, solve the control of product First Pass Yield hardly possible, yield rate in traditional COB encapsulation low Problem.
Brief description of the drawings
With reference to embodiment and accompanying drawing, the present invention is described in detail, wherein:
Fig. 1 is justifying structural representation when substrate is not cut in the present invention;
Fig. 2 is the front pad arrangement schematic diagram in single luminescent device region on substrate in the present invention;
Fig. 3 is the pin on back surface pad arrangement schematic diagram in single luminescent device region on substrate in the present invention;
Fig. 4 is that LED chip is encapsulated in the structural representation on substrate in the present invention;
Fig. 5 is the structural representation of the single non-sealing of luminescent device in the present invention;
Fig. 6 is the structural representation of single luminescent device sealing in the present invention.
Embodiment
The production technology of luminescent device proposed by the present invention, including the step such as encapsulation, cutting, point BIN, test.
Each step is illustrated in detail below:
Step 1, as shown in figure 1, substrate 1 carries out layout design in advance as required, the both sides up and down of substrate 1 are provided with technique edges 11, technique edges 11 are provided with positioning hole 12, are easy to carry out following process on substrate 1.Substrate 1 is black double-sided wiring board or many Sandwich circuit board, the material of substrate 1 is BT, carbon fiber or FR4, and surface is turmeric technique, except light-emitting zone justifying is black group Weldering, Double-side line conducting via is blind hole.As shown in Figure 2,3, the front of substrate 1 is used for the weldering of packaging LED chips provided with several Disk 13, the back side of substrate 1 is provided with several pin pads 14 for being used to weld controlling switch.
As shown in figure 4, by several luminous point group array packages on the front of substrate 1, each luminous point group is comprising extremely A few red LED chip, at least one green LED chip and at least one blue-light LED chip, all LED chips 2 are single base Color bare chip, and using COB encapsulation on substrate 1.
For the ease of description, three-color LED chip referred to herein is red LED chip, green LED chip and blue light The abbreviation of LED chip.The quantity of three-color LED chip and arrangement can be identical or be differed in each luminous point group, preferably, step Multiple red LED chips, multiple green LED chips and multiple blue-light LED chips, luminous point are included in 1 in each luminous point group Three-color LED chip arbitrary arrangement combination in group, according to the spacing being actually needed between adjustment three-color LED chip, luminous point group Interior adjacent three-color LED die colors are mixed to form a virtual luminous point, and point spacing is formed by the combination of some luminous points Different miniature matrix light emitting device 3.For existing SMD elements, it can be arranged in the luminescent device 3 processed using the present invention Several three-color LED chips of cloth, and can arbitrarily adjust the spacing of three-color LED chip, small volume, high resolution.
In addition, all LED chips 2 can be using formal dress COB encapsulation or upside-down mounting COB encapsulation in step 1, formal dress COB is will be naked Chip is just put on substrate 1, and the conducting of LED chip and substrate is realized by wire bonding.Bare chip is inverted by anti-dress COB Put on substrate 1, LED chip 2 is directly turned on by chip electrode and substrate, and upside-down mounting COB sizes can accomplish smaller, and optics is more Easily matching, heat sinking function, chip life-span and antistatic effect are good.
After the completion of step 2, the encapsulation of luminous point group, as shown in figure 5, the cutting of substrate 1 is divided into several independent photophores Provided with a luminous point group in part 3, each luminescent device 3, the size of luminescent device 3 is within 15 × 15mm, and luminescent device 3 is just Face is luminous, bottom surface is provided with controlling switch 31;
Step 3, the three-color LED chip in each luminescent device 3 lighted into test wavelength and brightness value respectively, according to test data By all 3 points of BIN of luminescent device;
Step 4, simple scan test the forward voltage and reverse leakage current of each luminescent device 3, choose underproof.
In the first embodiment, as shown in figure 5, production technology also includes:Step 5, qualified luminescent device 3 is solidified after Arrangement is installed on circuit boards, and the process that luminescent device 3 solidifies is exactly the surface dispensing of LED chip 2 in luminescent device 3, covering LED chip 2 prevents it to be oxidized, and the LED chip 2 on mask protection luminescent device is covered on circuit boards, what LED chip was sent Light is projected through mask, and the form of mask covering is conducive to later stage demolition and maintenance, and it is luminous evenly, it is brighter.
In a second embodiment, as shown in fig. 6, in step 2 before cutting substrate 1, first carrying out molding envelope to justifying substrate Glue, makes the colloid 4 of the front covering layer of transparent of substrate 1, LED chip 2, the light that LED chip 2 is sent is protected by the colloid 4 Line is projected through colloid 4.Preferably, the thickness range of colloid 4 is 0.8mm to 1.2mm.In a second embodiment, production technology Also include:Step 5, will be qualified and be incorporated into carrier band positioned at the luminescent devices 3 of same BIN scopes, diaphragm is sealed on carrier band.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.

Claims (9)

1. a kind of production technology of integrated Surface Mount luminescent device, it is characterised in that comprise the following steps:
Step 1, by several luminous point group array packages substrate front on, each luminous point group include at least one feux rouges LED chip, at least one green LED chip and at least one blue-light LED chip, all LED chips are encapsulated in substrate using COB On;
Step 2, substrate cut is divided into several independent luminescent devices, provided with a luminous point group in each luminescent device;
Step 3, the red LED chip by each luminescent device, green LED chip and blue-light LED chip light test respectively All luminescent devices are divided BIN by wavelength and brightness value according to test data;
The forward voltage and reverse leakage current of step 4, each luminescent device of test, choose underproof.
2. production technology as claimed in claim 1, it is characterised in that comprising multiple in each luminous point group in the step 1 Red LED chip, green light LED in red LED chip, multiple green LED chips and multiple blue-light LED chips, luminous point group Chip and blue-light LED chip ranks spacing can arbitrary arrangement combinations.
3. production technology as claimed in claim 2, it is characterised in that also include:Step 5, qualified luminescent device arranged Install on circuit boards, mask is covered on circuit boards.
4. production technology as claimed in claim 1 or 2, it is characterised in that in the step 2 before cutting substrate, first to base Plate carries out molding sealing, makes the colloid of the front covering layer of transparent of substrate.
5. production technology as claimed in claim 3, it is characterised in that the thickness range of the colloid is 0.8mm to 1.2mm.
6. production technology as claimed in claim 4, it is characterised in that also include:Step 5, will be qualified and positioned at same BIN models The luminescent device enclosed is incorporated into carrier band, and diaphragm is sealed on carrier band.
7. the production technology as described in any one of claims 1 to 3, it is characterised in that all LED chips are adopted in the step 1 With formal dress COB encapsulation or upside-down mounting COB encapsulation.
8. the production technology as described in any one of claims 1 to 3, it is characterised in that the substrate front side, which is provided with, to be used to encapsulate The pad of LED chip, the back side of the substrate is provided with the pin pad for being used for welding controlling switch.
9. the production technology as described in any one of claims 1 to 3, it is characterised in that the substrate is black double-sided wiring board Or multilayer circuit board, the material of the substrate is BT, carbon fiber or FR4.
CN201710257580.6A 2017-04-19 2017-04-19 A kind of production technology of integrated Surface Mount luminescent device Active CN107146787B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201710257580.6A CN107146787B (en) 2017-04-19 2017-04-19 A kind of production technology of integrated Surface Mount luminescent device
PCT/CN2017/112774 WO2018192221A1 (en) 2017-04-19 2017-11-24 Manufacturing process for integrated surface-mounted light emitting device

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018192221A1 (en) * 2017-04-19 2018-10-25 深圳巿梓光智能科技有限公司 Manufacturing process for integrated surface-mounted light emitting device
CN108767087A (en) * 2018-05-17 2018-11-06 山西高科华兴电子科技有限公司 A method of manufacturing LED display modules with multilayer compound glass ceramic substrate
CN110534508A (en) * 2019-02-01 2019-12-03 友达光电股份有限公司 Light emitting module and display module
CN111526664A (en) * 2020-04-28 2020-08-11 苏州狮威电子科技有限公司 Circuit board BIN value marking method

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Publication number Priority date Publication date Assignee Title
CN101640244A (en) * 2009-08-20 2010-02-03 张九六 Device for automatic material stripping and automatic Bin splitting for serial flaky LEDs
CN104167412A (en) * 2014-08-25 2014-11-26 广东威创视讯科技股份有限公司 LED packaging structure and manufacturing method thereof
CN105170487A (en) * 2015-06-05 2015-12-23 中山市利光电子有限公司 Automatic control system for LED sorting machine

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018192221A1 (en) * 2017-04-19 2018-10-25 深圳巿梓光智能科技有限公司 Manufacturing process for integrated surface-mounted light emitting device
CN108767087A (en) * 2018-05-17 2018-11-06 山西高科华兴电子科技有限公司 A method of manufacturing LED display modules with multilayer compound glass ceramic substrate
CN110534508A (en) * 2019-02-01 2019-12-03 友达光电股份有限公司 Light emitting module and display module
CN110534508B (en) * 2019-02-01 2021-05-28 友达光电股份有限公司 Light emitting module and display module
CN111526664A (en) * 2020-04-28 2020-08-11 苏州狮威电子科技有限公司 Circuit board BIN value marking method

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CN107146787B (en) 2019-08-09

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Effective date of registration: 20180517

Address after: 518000 Guangdong province Shenzhen Longgang District Bantian Street Tianan cloud Valley 3C1702-1

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