CN107134428A - 制绒槽内硅片输送装置 - Google Patents

制绒槽内硅片输送装置 Download PDF

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Publication number
CN107134428A
CN107134428A CN201710470101.9A CN201710470101A CN107134428A CN 107134428 A CN107134428 A CN 107134428A CN 201710470101 A CN201710470101 A CN 201710470101A CN 107134428 A CN107134428 A CN 107134428A
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texturing slot
lower rotary
rotating shaft
conveying device
silicon chip
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CN201710470101.9A
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狄云飞
孙铁囤
姚伟忠
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Changzhou EGing Photovoltaic Technology Co Ltd
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Changzhou EGing Photovoltaic Technology Co Ltd
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Priority to CN201710470101.9A priority Critical patent/CN107134428A/zh
Publication of CN107134428A publication Critical patent/CN107134428A/zh
Priority to PCT/CN2018/090532 priority patent/WO2018233501A1/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

本发明涉及太阳能电池片制备技术领域，尤其是一种制绒槽内硅片输送装置，制绒槽内具有用于盛放硅片制绒药液的腔体，该输送装置包括若干下转轴，若干下转轴转动设置在制绒槽内，下转轴上同轴固定有下滚轮；制绒槽内位于下转轴的上方转动设置有上转轴，上转轴上套设有若干上压滚轮，上压滚轮具有轴孔，轴孔的直径大于上转轴的直径，本发明的制绒槽内硅片输送装置能够有效减少硅片在输送时卡住的情况发生，而且使硅片进入制绒槽时，与药液有良好的接触，有效避免因药液液位偏低所导致的硅片脱液，减少了硅片在前清洗制程上因背面不良导致返工的数量，有助于节省返工带来的损耗。

Description

制绒槽内硅片输送装置
技术领域
本发明涉及太阳能电池片制备技术领域，尤其是一种制绒槽内硅片输送装置。
背景技术
在硅片制时，目前普遍采用上滚轮与下滚轮组合来将硅片输送经过制绒槽，由于硅片与制绒槽内的硅片接触位置固定，容易在硅片的表面产生滚轮印，而制绒槽内的药液液位很难加高，其一般只能略微过下滚轮，硅片夹在上滚轮与下滚轮之间被运输前进时，很容易发生硅片的上表面脱液，导致制绒失败，且由于上滚轮与下滚轮之间的间隙固定，容易发生硅片堵片的情况。
发明内容
本发明要解决的技术问题是：为了解决现有技术中硅片在制绒槽内容易脱液的问题，现提供一种制绒槽内硅片输送装置。
本发明解决其技术问题所采用的技术方案是：一种制绒槽内硅片输送装置，所述制绒槽内具有用于盛放硅片制绒药液的腔体，该输送装置包括若干下转轴，若干所述下转轴转动设置在制绒槽内，若干所述下转轴相互平行且间隔设置，所述下转轴上同轴固定有下滚轮；
所述制绒槽内位于下转轴的上方转动设置有上转轴，所述上转轴上套设有若干上压滚轮，所述上压滚轮具有轴孔，所述上转轴穿过轴孔，所述轴孔的直径大于上转轴的直径；
所述上转轴的端部固定有上齿轮，所述下转轴的端部固定有下齿轮，所述上齿轮与下齿轮啮合。
本方案中上转轴与下转轴转动时，硅片位于上压滚轮与下滚轮之间向前输送，由于上压滚轮的轴孔直径大于下转轴的直径，因此上压滚轮在其自重下会将硅片向下压，使硅片完全浸入药液中进行制绒，上压滚轮与上转轴之间的活动设计，使得上压滚轮具有一定的浮动空间，因此也不会发生硅片卡在上压滚轮与下滚轮之间的情况，且上压滚轮的浮动设计也不会在硅片表面残留滚轮印。
进一步地，所述上转轴上位于上压滚轮的两端均设置有轴向挡环，所述上压滚轮的端部与其所在侧的轴向挡环之间具有间隙，可防止上压滚轮在上转轴上的大幅度轴向撺动。
本发明的有益效果是：本发明的制绒槽内硅片输送装置能够有效减少硅片在输送时卡住的情况发生，而且使硅片进入制绒槽时，与药液有良好的接触，有效避免因药液液位偏低所导致的硅片脱液，减少了硅片在前清洗制程上因背面不良导致返工的数量，有助于节省返工带来的损耗。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明制绒槽内硅片输送装置的示意图。
图中：1、制绒槽，1-1、腔体，2、下转轴，2-1、下滚轮，2-2、下齿轮，3、上转轴，3-1、上压滚轮，3-11、轴孔，3-2、上齿轮，4、轴向挡环，5、硅片。
具体实施方式
现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图，仅以示意方式说明本发明的基本结构，因此其仅显示与本发明有关的构成，方向和参照(例如，上、下、左、右、等等)可以仅用于帮助对附图中的特征的描述。因此，并非在限制性意义上采用以下具体实施方式，并且仅仅由所附权利要求及其等同形式来限定所请求保护的主题的范围。
实施例1
如图1所示，一种制绒槽内硅片输送装置，制绒槽1内具有用于盛放硅片5制绒药液的腔体1-1，该输送装置包括若干下转轴2，若干下转轴2转动设置在制绒槽1内，若干下转轴2相互平行且间隔设置，下转轴2上同轴固定有下滚轮2-1；
制绒槽1内位于下转轴2的上方转动设置有上转轴3，上转轴3上套设有五个上压滚轮3-1，上压滚轮3-1具有轴孔3-11，上转轴3穿过轴孔3-11，轴孔3-11的直径大于上转轴3的直径；
上转轴3的端部固定有上齿轮3-2，下转轴2的端部固定有下齿轮2-2，上齿轮3-2与下齿轮2-2啮合。
上转轴3上位于上压滚轮3-1的两端均设置有轴向挡环4，上压滚轮3-1的端部与其所在侧的轴向挡环4之间具有间隙，轴向挡环4可通过螺钉固定在上转轴3上，。
下转轴2采用电机经减速器减速后单独驱动、或所有下转轴2之间传动连接并采用同一电机经减速器减速后驱动，下转轴2与上转轴3之间通过上齿轮3-2与下齿轮2-2啮合，带动上转轴3转动，上转轴2与下转轴3转动时，硅片5位于上压滚轮3-1与下滚轮2-1之间向前输送。
上述依据本发明的理想实施例为启示，通过上述的说明内容，相关工作人员完全可以在不偏离本项发明技术思想的范围内，进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容，必须要根据权利要求范围来确定其技术性范围。

Claims (2)

1.一种制绒槽内硅片输送装置，所述制绒槽(1)内具有用于盛放硅片(5)制绒药液的腔体(1-1)，其特征在于：该输送装置包括若干下转轴(2)，若干所述下转轴(2)转动设置在制绒槽(1)内，若干所述下转轴(2)相互平行且间隔设置，所述下转轴(2)上同轴固定有下滚轮(2-1)；
所述制绒槽(1)内位于下转轴(2)的上方转动设置有上转轴(3)，所述上转轴(3)上套设有若干上压滚轮(3-1)，所述上压滚轮(3-1)具有轴孔(3-11)，所述上转轴(3)穿过轴孔(3-11)，所述轴孔(3-11)的直径大于上转轴(3)的直径；
所述上转轴(3)的端部固定有上齿轮(3-2)，所述下转轴(2)的端部固定有下齿轮(2-2)，所述上齿轮(3-2)与下齿轮(2-2)啮合。
2.根据权利要求1所述的制绒槽内硅片输送装置，其特征在于：所述上转轴(3)上位于上压滚轮(3-1)的两端均设置有轴向挡环(4)，所述上压滚轮(3-1)的端部与其所在侧的轴向挡环(4)之间具有间隙。
CN201710470101.9A 2017-06-20 2017-06-20 制绒槽内硅片输送装置 Pending CN107134428A (zh)

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PCT/CN2018/090532 WO2018233501A1 (zh) 2017-06-20 2018-06-09 制绒槽内硅片输送装置

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108336166A (zh) * 2018-04-11 2018-07-27 维科诚（苏州）光伏科技有限公司 一种金刚线硅片预制绒装置
WO2018233501A1 (zh) * 2017-06-20 2018-12-27 常州亿晶光电科技有限公司 制绒槽内硅片输送装置

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EP2060659A2 (de) * 2007-11-13 2009-05-20 Rena Sondermaschinen GmbH Vorrichtung und Verfahren zum Transport von flachem Gut in Durchlaufanlagen
CN201791688U (zh) * 2010-05-14 2011-04-13 苏州聚晶科技有限公司 硅片水平清洗机滚轮
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018233501A1 (zh) * 2017-06-20 2018-12-27 常州亿晶光电科技有限公司 制绒槽内硅片输送装置
CN108336166A (zh) * 2018-04-11 2018-07-27 维科诚（苏州）光伏科技有限公司 一种金刚线硅片预制绒装置

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Application publication date: 20170905