CN107132472A - 一种用于分析深亚微米级soi工艺芯片的腐蚀溶液及方法 - Google Patents
一种用于分析深亚微米级soi工艺芯片的腐蚀溶液及方法 Download PDFInfo
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- CN107132472A CN107132472A CN201710372213.0A CN201710372213A CN107132472A CN 107132472 A CN107132472 A CN 107132472A CN 201710372213 A CN201710372213 A CN 201710372213A CN 107132472 A CN107132472 A CN 107132472A
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- etchant solution
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/307—Contactless testing using electron beams of integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710372213.0A CN107132472B (zh) | 2017-05-23 | 2017-05-23 | 一种用于分析深亚微米级soi工艺芯片的腐蚀溶液及方法 |
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CN201710372213.0A CN107132472B (zh) | 2017-05-23 | 2017-05-23 | 一种用于分析深亚微米级soi工艺芯片的腐蚀溶液及方法 |
Publications (2)
Publication Number | Publication Date |
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CN107132472A true CN107132472A (zh) | 2017-09-05 |
CN107132472B CN107132472B (zh) | 2020-06-09 |
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CN201710372213.0A Active CN107132472B (zh) | 2017-05-23 | 2017-05-23 | 一种用于分析深亚微米级soi工艺芯片的腐蚀溶液及方法 |
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CN (1) | CN107132472B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113675083A (zh) * | 2021-10-25 | 2021-11-19 | 江山季丰电子科技有限公司 | 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法 |
CN115824756A (zh) * | 2022-10-31 | 2023-03-21 | 南京长芯检测科技有限公司 | 一种可区分增强型和耗尽型mos晶体管的染色溶液及其应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1285778A (en) * | 1969-01-15 | 1972-08-16 | Ibm | Improvements in and relating to methods of etching |
JP2003514373A (ja) * | 1999-07-28 | 2003-04-15 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | フッ化水素酸を含むエッチング溶液 |
CN1976012A (zh) * | 2005-11-30 | 2007-06-06 | 尔必达存储器株式会社 | 具有岛状分布结构的半导体芯片及其制造方法 |
CN103926266A (zh) * | 2014-04-21 | 2014-07-16 | 武汉新芯集成电路制造有限公司 | 一种半导体结构的失效分析方法 |
CN105253854A (zh) * | 2015-11-12 | 2016-01-20 | 中国工程物理研究院电子工程研究所 | 一种soi mems牺牲层腐蚀时金属电极的保护方法 |
-
2017
- 2017-05-23 CN CN201710372213.0A patent/CN107132472B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1285778A (en) * | 1969-01-15 | 1972-08-16 | Ibm | Improvements in and relating to methods of etching |
JP2003514373A (ja) * | 1999-07-28 | 2003-04-15 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | フッ化水素酸を含むエッチング溶液 |
CN1976012A (zh) * | 2005-11-30 | 2007-06-06 | 尔必达存储器株式会社 | 具有岛状分布结构的半导体芯片及其制造方法 |
CN103926266A (zh) * | 2014-04-21 | 2014-07-16 | 武汉新芯集成电路制造有限公司 | 一种半导体结构的失效分析方法 |
CN105253854A (zh) * | 2015-11-12 | 2016-01-20 | 中国工程物理研究院电子工程研究所 | 一种soi mems牺牲层腐蚀时金属电极的保护方法 |
Non-Patent Citations (3)
Title |
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吉林农业机械化学院修理教研室: "化学强腐蚀", 《农机旧件修复工艺》 * |
孙宏岭 等: "钢制铁品的酸洗", 《商品与商品养护》 * |
石庚辰 等: "湿法腐蚀工艺", 《微机电系统技术集成》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113675083A (zh) * | 2021-10-25 | 2021-11-19 | 江山季丰电子科技有限公司 | 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法 |
CN113675083B (zh) * | 2021-10-25 | 2021-12-21 | 江山季丰电子科技有限公司 | 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法 |
CN115824756A (zh) * | 2022-10-31 | 2023-03-21 | 南京长芯检测科技有限公司 | 一种可区分增强型和耗尽型mos晶体管的染色溶液及其应用 |
CN115824756B (zh) * | 2022-10-31 | 2023-09-15 | 南京长芯检测科技有限公司 | 一种可区分增强型和耗尽型mos晶体管的染色溶液及其应用 |
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Address after: 100192 Room 305, building 2, Zone C, Dongsheng Science Park, Zhongguancun, 66 xixiaokou Road, Haidian District, Beijing Patentee after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: STATE GRID CORPORATION OF CHINA Patentee after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Address before: 100192 Room 305, building 2, Zone C, Dongsheng Science Park, Zhongguancun, 66 xixiaokou Road, Haidian District, Beijing Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: State Grid Corporation of China Patentee before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. |
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Effective date of registration: 20210126 Address after: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: Beijing core Kejian Technology Co.,Ltd. Patentee after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee after: STATE GRID CORPORATION OF CHINA Address before: 100192 Room 305, building 2, Zone C, Dongsheng Science Park, Zhongguancun, 66 xixiaokou Road, Haidian District, Beijing Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: STATE GRID CORPORATION OF CHINA Patentee before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. |
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Address after: 102200 1st floor, building 11, Zhongke Yungu garden, No. 79, Shuangying West Road, Changping District, Beijing Patentee after: Beijing core Kejian Technology Co.,Ltd. Patentee after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee after: STATE GRID CORPORATION OF CHINA Address before: 100192 building 3, A District, Dongsheng science and Technology Park, Zhongguancun, 66 Haidian District West Road, Beijing. Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: Beijing core Kejian Technology Co.,Ltd. Patentee before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee before: STATE GRID CORPORATION OF CHINA |
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