CN107123684A - One kind has wide bandgap material and silicon materials complex vertical double-diffusion metal-oxide-semiconductor field effect transistor - Google Patents
One kind has wide bandgap material and silicon materials complex vertical double-diffusion metal-oxide-semiconductor field effect transistor Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000009792 diffusion process Methods 0.000 title claims abstract description 21
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 17
- 230000005669 field effect Effects 0.000 title claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 238000000407 epitaxy Methods 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 40
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 230000002146 bilateral effect Effects 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- AHKZTVQIVOEVFO-UHFFFAOYSA-N oxide(2-) Chemical compound [O-2] AHKZTVQIVOEVFO-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 abstract description 8
- 230000035800 maturation Effects 0.000 abstract 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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Abstract
The present invention, which proposes one kind, has wide bandgap material and silicon materials complex vertical double-diffusion metal-oxide-semiconductor field effect transistor (VDMOS), the VDMOS device is mainly characterized by wide bandgap material being combined with silicon materials, the less N-type broad-band gap epitaxial layer of doping concentration is formed in wide bandgap N+type backing material upper surface, heteroepitaxial growth (or being formed using bonding techniques) N-type silicon epitaxy layer based on the N-type broad-band gap epitaxial layer, device active region is formed using silicon maturation process again.Utilize the high critical breakdown electric field characteristic of wide bandgap material, the high electric field peak of device is introduced into wide bandgap material, the longitudinal electric field peak of device is raised, device can undertake higher breakdown voltage, device electric breakdown strength is breached to be limited by single silicon materials critical breakdown electric field, the high heat conductance characteristic of wide bandgap material is conducive to device to radiate simultaneously, effectively improves device performance.
Description
Technical field
The present invention relates to power semiconductor field, more particularly to a kind of vertical bilateral diffusion metallic oxide field-effect
Pipe.
Background technology
Power semiconductor refers to be mainly used in the high-power electricity in terms of the transformation of electrical energy and control circuit of power equipment
Sub- device.With developing rapidly for Power Electronic Technique, power semiconductor have been widely used for modern industry control and
In defence equipment.Vertical double-diffused MOS field-effect transistor (VDMOS, Vertical Double-
Diffusion Metal Oxide Semiconductor) so that its switching speed is fast, the small, input impedance of loss is high, driving power
The characteristics such as small, frequency characteristic is good, mutual conductance high linearity height are usually used in power integrated circuit and power integrated system.
In recent years, it is mainly the ripe superjunction technique of research to the characteristic optimizing of VDMOS device to realize with superjunction
VDMOS device.
The content of the invention
The present invention proposes a kind of new vertical double diffusion metal oxide semiconductor power device, it is intended to further improve
VDMOS breakdown voltage, improves device performance.
Technical scheme is as follows:
Should have wide bandgap material and silicon materials complex vertical double-diffusion metal-oxide-semiconductor field effect transistor, including:
The N+ type substrates of wide bandgap semiconductor materials;
In the N-type epitaxy layer of the wide bandgap semiconductor materials of N+ types substrate top surface formation, N-type broad-band gap extension is designated as
Layer;
In the N-type broad-band gap epitaxial layer upper surface heteroepitaxial growth or the N-type silicon epitaxy using bonding techniques formation
Layer (using the normally referred to as bonded layer of bonding techniques formation, is uniformly designated as N-type silicon epitaxy layer) herein;
Respectively the N-type silicon epitaxy layer top left and right two end regions formation two at p-type base;Everywhere p-type base
Raceway groove and N+ types source region and the contact of P+ channeled substrates are formed in area, wherein N+ types source region is abutted with raceway groove, and P+ channeled substrates connect
Touch and be located at raceway groove distal end relative to N+ types source region;The longitudinal boundary of the p-type base is extended into wide bandgap N type epitaxial layer, i.e. P
Type base and the PN junction of N-type broad-band gap epitaxial layer formation are located in N-type broad-band gap epitaxial layer, and raceway groove is still located in silicon epitaxy layer;
Gate oxide, covers the N-type silicon epitaxy layer and is located at ditch at the part and corresponding two at two between p-type base
Road;
Grid, positioned at gate oxide upper surface;
Source electrode, covering P+ channeled substrates contact the upper surface in the region that connects with N+ type source regions;Source electrode connects altogether at two;
Drain electrode, positioned at the N+ types substrate lower surface;
The thickness and doping concentration of the N-type broad-band gap epitaxial layer determines by the resistance to pressure request of device, N-type broad-band gap extension
The doping concentration of layer is less than the doping concentration of N+ type substrates.
On the basis of above scheme, the present invention has also further made following optimization:
Above-mentioned wide bandgap semiconductor materials use carborundum or gallium nitride.
The doping concentration of above-mentioned N-type broad-band gap epitaxial layer is determined according to the breakdown voltage of design, compared with N+ type substrates
Difference is the about 4-6 order of magnitude.
Above-mentioned N-type silicon epitaxy layer is thin layer (about in 1-6 microns), and p-type base stretches into wide bandgap N type epitaxial layer
Part is no more than 2/3rds.
Above-mentioned broad-band gap epitaxy layer thickness is determined according to the breakdown voltage of design.For example, when it is pressure-resistant be 900V when, broad-band gap
Epitaxy layer thickness is 17 microns.
The doping concentration of above-mentioned N-type broad-band gap epitaxial layer is determined according to the breakdown voltage of design, is generally (1014‐1016)
cm‐3
Aforementioned p-type base and its N+ types source region and the contact of P+ channeled substrates and raceway groove, are adopted on N-type silicon epitaxy layer top
Formed with ion implanting and double diffusion technique.
Above-mentioned grid is polysilicon gate, and the source electrode is metallizing source, is drained as metalized drain.
One kind making is above-mentioned, and there is wide bandgap material to be imitated with silicon materials complex vertical double-diffused metal oxide semiconductor
Should pipe method, comprise the following steps:
(1) the N-type broad-band gap epitaxial layer is formed in the upper surface of the N+ type substrates of wide bandgap semiconductor materials;
(2) heteroepitaxial growth technology growth N-type silicon epitaxy layer is passed through;
(2) in N+ type substrates lower surface formation metalized drain;
(3) left and right two end regions on N-type silicon epitaxy layer top use ion implanting formation p-type base and its N+ types source
Area and the contact of P+ channeled substrates, and corresponding raceway groove is formed using double diffusion technique, it is ensured that the longitudinal boundary of p-type base is extended into
In wide bandgap N type epitaxial layer, i.e. p-type base and the PN junction of N-type broad-band gap epitaxial layer formation is located in N-type broad-band gap epitaxial layer,
Raceway groove is still located in silicon epitaxy layer;
(4) form gate oxide in whole N-type silicon epitaxy layer upper surface, and depositing polysilicon, then etches polycrystalline silicon with
And gate oxide (removing positioned at the part of left and right two end regions), form polysilicon gate;
(5) passivation layer is deposited in device surface, and contact hole is etched in the position corresponding to source electrode;
(6) metal is deposited in contact hole and (remove remaining passivation layer of periphery) is etched and forms source electrode, and by source at two
Extremely connect altogether.
Technical solution of the present invention has the beneficial effect that:
The substrate of VDMOS device uses wide bandgap material, and doping concentration is formed in wide bandgap N+type backing material upper surface
Less N-type broad-band gap epitaxial layer, then by heterogeneous epitaxial technology (or bonding techniques) formation N-type silicon epitaxy layer, using silicon into
Ripe technique making devices active area.The high electric field peak that wherein p-type base/N-type broad-band gap epitaxial layer knot is produced is located at broad-band gap material
In material, the characteristics of critical breakdown electric field high using wide bandgap material, the longitudinal electric field peak of device is raised, device can undertake higher
Breakdown voltage, breach traditional silicon substrate VDMOS breakdown voltages and limited by single silicon materials critical breakdown electric field, device drift
Move in the case of section length, drift region concentration identical, 2-3 times is improved than traditional VDMOS breakdown voltages.While broad-band gap material
The high heat conductance characteristic of material is conducive to device to radiate, and effectively improves device performance.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Wherein, 1- source electrodes;2- gate oxides;3- grids;4- source electrodes;5-P+ channeled substrates contact (P+ type body area);6‐N+
Type source region;7-P types base;The N+ type substrates of 801- wide bandgap materials;802-N molded breadth band gap epitaxial layers;9- drains.
Embodiment
The present invention is introduced by taking N-channel VDMOS as an example below in conjunction with the accompanying drawings.
As shown in figure 1, this example includes:
The N+ types substrate 801 of wide bandgap semiconductor materials;
The N-type epitaxy layer of the wide bandgap semiconductor materials formed in the upper surface of N+ types substrate 801, is designated as outside N-type broad-band gap
Prolong layer 802;
Outside the upper surface heteroepitaxial growth of N-type broad-band gap epitaxial layer 802 or the N-type silicon of utilization bonding techniques formation
Prolong layer;
Respectively the N-type silicon epitaxy layer top left and right two end regions formation two at p-type base 7;Everywhere p-type
Raceway groove and N+ types source region 6 and P+ channeled substrates contact 5 are formed in base 7, wherein N+ types source region 6 is abutted with raceway groove, P+ raceway grooves
Substrate contact 5 is located at raceway groove distal end relative to N+ types source region 6;The longitudinal boundary of the p-type base extends into wide bandgap N type extension
In layer, i.e. p-type base and the PN junction of N-type broad-band gap epitaxial layer formation is located in N-type broad-band gap epitaxial layer, and raceway groove is still located at outside silicon
Prolong in layer;
Gate oxide, covers the N-type silicon epitaxy layer and is located at the part and corresponding two at two between p-type base 7
Raceway groove;
Grid 3, positioned at gate oxide upper surface;
Source electrode 1,4, covering P+ channeled substrates contact 5 connects the upper surface in region with N+ types source region 6;Source electrode 1,4 is total at two
Connect;
Drain electrode 9, positioned at the lower surface of N+ types substrate 801.
By taking N-channel VDMOS as an example, it can specifically be prepared by following steps:
1) the N-type broad-band gap epitaxial layer 802 is formed in the upper surface of the N+ types substrate 801 of wide bandgap semiconductor materials;
Wide bandgap semiconductor materials use carborundum or gallium nitride, and the doping concentration of N-type broad-band gap epitaxial layer 802 is (1014‐1016)
cm‐3, the doping concentration small 4-6 order of magnitude of the doping concentration than N+ types substrate 801 of N-type broad-band gap epitaxial layer 802;
2) heteroepitaxial growth technology growth N-type silicon epitaxy layer is passed through;N-type silicon epitaxy layer is 1-6 microns of thin layer, p-type
The part that base stretches into wide bandgap N type epitaxial layer is no more than 2/3rds;
3) in the lower surface of N+ types substrate 801 formation metalized drain;
4) left and right two end regions on N-type silicon epitaxy layer top use ion implanting formation p-type base 7 and its N+ types source
Area 6 and P+ channeled substrates contact 5, and corresponding raceway groove is formed using double diffusion technique, it is ensured that the longitudinal boundary extension of p-type base
Enter in wide bandgap N type epitaxial layer, i.e. p-type base and the PN junction of N-type broad-band gap epitaxial layer formation is located at N-type broad-band gap epitaxial layer
Interior, raceway groove is still located in silicon epitaxy layer;
5) form gate oxide in whole N-type silicon epitaxy layer upper surface, and depositing polysilicon, then etches polycrystalline silicon and
Gate oxide is removed positioned at the part of left and right two end regions, forms polysilicon gate;
6) passivation layer is deposited in device surface, and contact hole is etched in the position corresponding to source electrode;
7) metal is deposited in contact hole and removal remaining passivation layer of periphery formation source electrode is etched, and source electrode at two is total to
Connect.
Show through ISE TCAD emulation, performance improvement of the device than traditional silicon substrate VDMOS, two kinds of device drift regions
Length is identical, in the case of drift doping concentration identical, and the breakdown voltage of the device is improved compared to traditional silicon substrate VDMOS
2-3 times.
VDMOS in the present invention can also be P-type channel, and its structure is equal with N-channel VDMOS, is also regarded as belonging to
The application scope of the claims, will not be repeated here.
Claims (10)
1. one kind has wide bandgap material and silicon materials complex vertical double-diffusion metal-oxide-semiconductor field effect transistor, including:
The N+ types substrate (801) of wide bandgap semiconductor materials;
The N-type epitaxy layer of the wide bandgap semiconductor materials formed in N+ types substrate (801) upper surface, is designated as N-type broad-band gap extension
Layer (802);
In N-type broad-band gap epitaxial layer (802) the upper surface heteroepitaxial growth or the N-type silicon epitaxy using bonding techniques formation
Layer;
Respectively the N-type silicon epitaxy layer top left and right two end regions formation two at p-type base (7);Everywhere p-type base
Raceway groove and N+ types source region (6) and P+ channeled substrates contact (5) are formed in area (7), wherein N+ types source region (6) is abutted with raceway groove, P
+ channeled substrate contacts (5) and is located at raceway groove distal end relative to N+ types source region (6);The longitudinal boundary of the p-type base extends into broadband
In gap N-type epitaxy layer, i.e. p-type base and the PN junction of N-type broad-band gap epitaxial layer formation is located in N-type broad-band gap epitaxial layer, raceway groove
It is still located in silicon epitaxy layer;
Gate oxide (2), covers the N-type silicon epitaxy layer and is located at the part and corresponding two at two between p-type base (7)
Raceway groove;
Grid (3), positioned at gate oxide upper surface;
Source electrode (1,4), covering P+ channeled substrates contact (5) connects the upper surface in region with N+ types source region (6);Source electrode at two (1,
4) connect altogether;
Drain (9), positioned at N+ types substrate (801) lower surface;
The thickness and doping concentration of the N-type broad-band gap epitaxial layer determines by the resistance to pressure request of device, N-type broad-band gap epitaxial layer
Doping concentration is less than the doping concentration of N+ types substrate (801).
2. according to claims 1 there is wide bandgap material partly to be led with silicon materials complex vertical bilateral diffusion metal oxide
Body FET, it is characterised in that:The wide bandgap semiconductor materials use carborundum or gallium nitride.
3. according to claims 1 there is wide bandgap material partly to be led with silicon materials complex vertical bilateral diffusion metal oxide
Body FET, it is characterised in that:Doping concentration of the doping concentration of N-type broad-band gap epitaxial layer (802) than N+ types substrate (801)
The small 4-6 order of magnitude.
4. according to claims 1 there is wide bandgap material partly to be led with silicon materials complex vertical bilateral diffusion metal oxide
Body FET, it is characterised in that:N-type silicon epitaxy layer is 1-6 microns of thin layer, and p-type base stretches into wide bandgap N type epitaxial layer
Part is no more than 2/3rds.
5. according to claims 1 there is wide bandgap material partly to be led with silicon materials complex vertical bilateral diffusion metal oxide
Body FET, it is characterised in that:If resistance to pressure request is 900V, then N-type broad-band gap epitaxial layer (802) thickness is 17 microns.
6. according to claims 1 there is wide bandgap material partly to be led with silicon materials complex vertical bilateral diffusion metal oxide
Body FET, it is characterised in that:The doping concentration of the N-type broad-band gap epitaxial layer (802) is (1014‐1016)cm‐3。
7. according to claims 1 there is wide bandgap material partly to be led with silicon materials complex vertical bilateral diffusion metal oxide
Body FET, it is characterised in that:The p-type base (7) and its N+ types source region (6) and P+ channeled substrates contact (5) and ditch
Road, is using ion implanting and double diffusion technique formation on N-type silicon epitaxy layer top.
8. according to claims 1 there is wide bandgap material partly to be led with silicon materials complex vertical bilateral diffusion metal oxide
Body FET, it is characterised in that:The grid (3) is polysilicon gate, and the source electrode (1,4) is metallizing source, drain electrode
(9) it is metalized drain.
9. it is a kind of make described in claim 1 there is wide bandgap material and silicon materials complex vertical bilateral diffusion metal oxide half
The method of conductor FET, comprises the following steps:
(1) the N-type broad-band gap epitaxial layer (802) is formed in the upper surface of the N+ types substrate (801) of wide bandgap semiconductor materials;
(2) heteroepitaxial growth technology growth N-type silicon epitaxy layer is passed through;
(2) in N+ types substrate (801) lower surface formation metalized drain;
(3) left and right two end regions on N-type silicon epitaxy layer top use ion implanting formation p-type base (7) and its N+ type source regions
(6) and P+ channeled substrates contact (5), and corresponding raceway groove is formed using double diffusion technique, it is ensured that the longitudinal boundary of p-type base prolongs
Stretch into wide bandgap N type epitaxial layer, i.e. p-type base and the PN junction of N-type broad-band gap epitaxial layer formation is located at N-type broad-band gap epitaxial layer
Interior, raceway groove is still located in silicon epitaxy layer;
(4) gate oxide, and depositing polysilicon are formed in whole N-type silicon epitaxy layer upper surface, then etches polycrystalline silicon and grid
Oxide layer, forms polysilicon gate;
(5) passivation layer is deposited in device surface, and contact hole is etched in the position corresponding to source electrode;
(6) metal is deposited in contact hole and is etched and forms source electrode, and source electrode at two is connect altogether.
10. method according to claim 9, it is characterised in that:The wide bandgap semiconductor materials use carborundum or nitrogen
Change gallium.
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