CN107109069A - Resin combination, the manufacture method of semiconductor device and semiconductor device - Google Patents

Resin combination, the manufacture method of semiconductor device and semiconductor device Download PDF

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Publication number
CN107109069A
CN107109069A CN201580059119.9A CN201580059119A CN107109069A CN 107109069 A CN107109069 A CN 107109069A CN 201580059119 A CN201580059119 A CN 201580059119A CN 107109069 A CN107109069 A CN 107109069A
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CN
China
Prior art keywords
resin
semiconductor chip
chip
thermosetting resin
semiconductor device
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Pending
Application number
CN201580059119.9A
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Chinese (zh)
Inventor
石井淳
志贺豪士
饭野智绘
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Nitto Denko Corp
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Nitto Denko Corp
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Publication date
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Publication of CN107109069A publication Critical patent/CN107109069A/en
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

The present invention, which is provided, can mitigate resin combination of the damage caused to semiconductor chip etc..The present invention relates to the following resin combination of thickness that the value of the 4 of the average grain diameter of filler times is resin combination.

Description

Resin combination, the manufacture method of semiconductor device and semiconductor device
Technical field
The present invention relates to resin combination, the manufacture method of semiconductor device and semiconductor device.
Background technology
To be built-in with semiconductor device (also referred to as following " the semiconductor package part ") stacking of semiconductor chip technology (with It is referred to as " Package-On-Package " down) obtain practical.It is practical with Package-On-Package, it is desirable to The low back (lowprofile, low back) of semiconductor device.
In addition, being used as the manufacturing technology of semiconductor device, it is known to the thermosetting containing thermosetting resin, filler etc. Resin sheet covers the technology of semiconductor chip (referring for example to patent document 1).
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2013-7028 publications
The content of the invention
Invent problem to be solved
As shown in figure 30, the thermosetting resin to possessing semiconductor chip 514 and being configured on semiconductor chip 514 is passed through The works 500 of piece 512 pressurizes, and can cover semiconductor chip 514 with thermosetting resin piece 512.However, along with structure The pressurization of thing 500, filler is pushed to semiconductor chip 514, is thus had semiconductor chip 514 and is sustained damage, partly leading Situation about being cracked in body chip 514.In the case where thermosetting resin piece 512 is thin, easily produced in semiconductor chip 514 Raw crackle.
It is an object of the present invention to solve described problem, there is provided the tree that can mitigate the damage caused to semiconductor chip Oil/fat composition.The present invention also aims to there is provided the semiconductor device that can mitigate the damage caused to semiconductor chip Manufacture method.
Method for solving problem
In order to solve the above problems, present inventor has performed further investigation, as a result find, by by the average grain of filler 4 times of the value in footpath is set to below the thickness of resin combination, can mitigate the damage caused to semiconductor chip, so as to complete The present invention.
That is, the present invention provides a kind of resin combination, and it contains filler, and 4 times of value of the average grain diameter of filler Below the thickness of resin combination.
In the present invention, due to the average grain diameter of filler 4 times of value for the thickness of resin combination below, therefore can be with Mitigate the damage caused to semiconductor chip.
As the shape of resin combination, flat board (tablet) shape, sheet etc. can be enumerated.Wherein preferred sheet.
In addition, the present invention provides a kind of manufacture method of semiconductor device, the manufacture method includes being covered with resin combination The process of lid semiconductor chip.
Invention effect
According to the present invention it is possible to mitigate the damage caused to semiconductor chip.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of thermosetting resin piece.
Fig. 2 be represent by layered product be configured at downside heating plate and upside heating plate between state outline section Figure.
Fig. 3 is the profile for the outline for representing the appearance using parallel flat mode thermo-compression lamination body.
Fig. 4 is the diagrammatic cross-section of seal etc..
Fig. 5 is the diagrammatic cross-section for heating firming body etc. obtained by seal.
Fig. 6 is the diagrammatic cross-section of firming body.
Fig. 7 is the diagrammatic cross-section of firming body.
Fig. 8 is the profile for representing to be formed the outline of the appearance of buffering film on firming body.
Fig. 9 is the profile for the outline for representing the appearance to buffering film irradiation exposure light.
Figure 10 is the profile for representing to be formed the outline of the appearance of opening portion in buffering film.
Figure 11 is the profile for representing to form the outline of the appearance of through hole.
Figure 12 is the profile for representing to form the outline of the appearance of penetrating electrode.
Figure 13 is the profile for representing to form the outline of the appearance of resist on the seed layer.
Figure 14 is the profile for representing to form the outline of the appearance of plating pattern on the seed layer.
Figure 15 is the profile for representing to complete the outline of the appearance connected up again.
Figure 16 is to represent the profile in the outline for connecting up the appearance for foring diaphragm again.
Figure 17 is again the diagrammatic cross-section of Wiring body.
Figure 18 is to represent the profile in the outline for connecting up the appearance for foring electrode again.
Figure 19 is the profile for representing to form the outline of the appearance of salient point on electrode.
Figure 20 is the diagrammatic cross-section of semiconductor device.
Figure 21 be represent by laminate structure be configured at downside heating plate and upside heating plate between state outline Profile.
Figure 22 is the profile for the outline for representing the appearance using parallel flat mode thermo-compression lamination structure.
Figure 23 is the diagrammatic cross-section of consolidated structures body.
Figure 24 is the diagrammatic cross-section of consolidated structures body.
Figure 25 is through the diagrammatic cross-section of structure.
Figure 26 is again the diagrammatic cross-section of wiring structure.
Figure 27 is the diagrammatic cross-section of semiconductor device.
Figure 28 is the SEM observation pictures of the solidfied material of embodiment 1.The observation of epimere seems the observation picture of 200 times of multiplying power.Hypomere Observation seem 1000 times of multiplying power observation picture.
Figure 29 is the SEM observation pictures of the solidfied material of comparative example 1.The observation of epimere seems the observation picture of 200 times of multiplying power.Hypomere Observation seem 1000 times of multiplying power observation picture.
Figure 30 is the works for representing the thermosetting resin piece to possessing semiconductor chip and being configured on semiconductor chip The profile of the outline of the appearance of pressurization.
Embodiment
Embodiment will be enumerated below, and the present invention is described in detail, but the present invention is not limited to these realities Apply mode.
[embodiment 1]
(compositions of thermosetting resin 12 (hereinafter referred to as " thermosetting resin piece 12 ") that sheet is made)
Thermosetting resin piece 12 is illustrated.As shown in figure 1, thermosetting resin piece 12 is made into sheet.
Thermosetting resin piece 12 contains filler.In addition, 4 times of value of the average grain diameter of filler is thermosetting resin piece Below 12 thickness.
It is preferably filled with below the thickness that 5 times of value of the average grain diameter of agent is thermosetting resin piece 12.If filler 5 times of value of average grain diameter is that below the thickness of thermosetting resin piece 12, then can utilize laser by making thermosetting tree Through hole is readily formed in solidfied material obtained from fat piece 12 solidifies.Specifically, for the light by being located proximate to laser The incident of source is open and is open facing outgoing opening to define the through hole of shape with incidence, due to that can prevent outgoing Opening is too small compared with incidence opening, therefore through hole can be readily formed in solidfied material.
Calculated in the following method moreover, average grain diameter is profit.
(calculation method of average grain diameter)
Using scanning electron microscope (SEM) under accelerating potential 5kV, with 500 times, 10000 times and 50000 times observations The section of thermosetting resin piece 12, is calculated with more than 1 μm of filler using image softwares such as image J in 500 times of visuals field As the first average grain diameter of object, calculated in 10000 times of visuals field using 0.1 μm less than 1 μm of filler as right The second average grain diameter of elephant, is calculated the 3rd flat using the filler less than 0.01 μm as object in 50000 times of visuals field in addition Equal particle diameter, is calculated " average grain diameter " based on the first average grain diameter, the second average grain diameter and the 3rd average grain diameter.Moreover, by region Whole visuals field are dimensioned so as in monitor.
Due to being observed using 3 multiplying powers, thus can with precision it is excellent calculate average grain diameter.
When the thickness of thermosetting resin piece 12 is set into 100%, the maximum particle diameter of filler is preferably less than 67%, more Preferably less than 50%, more preferably less than 40%.If less than 40%, then it can mitigate and semiconductor chip is caused Damage.On the other hand, when the thickness of thermosetting resin piece 12 is set into 100%, the maximum particle diameter of filler is preferably 5% More than.
The thickness of thermosetting resin piece 12 is preferably more than 10 μm, more preferably more than 20 μm, more preferably 30 μm More than, particularly preferably more than 50 μm.The thickness of thermosetting resin piece 12 can be more than 100 μm, or 150 μm with On, can also be more than 180 μm.On the other hand, the thickness of thermosetting resin piece 12 is preferably less than 1000 μm, more preferably Less than 300 μm, more preferably less than 250 μm, be still more preferably less than 200 μm.
The average grain diameter of packing material is preferably less than 50 μm, more preferably less than 30 μm, is still more preferably 25 μm Hereinafter, particularly preferably less than 20 μm., then can be using laser by making thermosetting resin piece 12 if less than 20 μm Through hole is readily formed in solidfied material obtained from solidification.On the other hand, the average grain diameter of packing material be preferably 0.5 μm with On, more preferably more than 1 μm, more preferably more than 3 μm.
The maximum particle diameter of packing material is preferably less than 75 μm, more preferably less than 54 μm, more preferably 20 μm with Under.If less than 20 μm, then it can mitigate the damage caused to semiconductor chip.On the other hand, the maximum grain of packing material Footpath is preferably more than 0.5 μm, more preferably more than 3 μm.
As filler, for example, it can enumerate inorganic filling material.
As inorganic filling material, for example, it can enumerate quartz glass, talcum, silica (fused silica, crystallization Property silica etc.), aluminum oxide, aluminium nitride, silicon nitride, boron nitride etc..Wherein, from thermal coefficient of expansion can be reduced well Reason consideration, preferably silica, aluminum oxide, more preferably silica.As silica, from mobility it is excellent the reasons why examine Consider, preferred molten silica, more preferably spheroidal fused silica.
Inorganic filling material can also be the material that (pre-treatment) is handled by silane coupler.Thus, it is possible to carry The high wellability with resin, can improve the dispersiveness of inorganic filling material.
The content of packing material in thermosetting resin piece 12 is preferably more than 20 volume %, more preferably 70 volume % with On, more preferably more than 74 volume %.On the other hand, the content of packing material is preferably below 90 volume %, more preferably For below 85 volume %.If below 90 volume %, then good concavo-convex tracing ability can be obtained.
The content of packing material can be so that " weight % " is illustrated as unit.For containing for representational silica Amount, so that " weight % " is illustrated as unit.
Because the usual proportion of silica is 2.2g/cm3, therefore the OK range example of the content (weight %) of silica It is such as follows.
That is, the content of the silica in thermosetting resin piece 12 is preferably more than 81 weight % more preferably 84 weights Measure more than %.The content of silica in thermosetting resin piece 12 is preferably more preferably 91 weight % below 94 weight % Below.
Because the usual proportion of aluminum oxide is 3.9g/cm3, therefore the content (weight %) of aluminum oxide OK range for example such as Shown in lower.
That is, the content of the aluminum oxide in thermosetting resin piece 12 is preferably more than 88 weight % more preferably 90 weight % More than.The content of aluminum oxide in thermosetting resin piece 12 is preferably more preferably below 95 weight % below 97 weight %.
Thermosetting resin piece 12 contains thermosetting resin.As thermosetting resin, epoxy resin, phenolic resin can be enumerated Deng.
As epoxy resin, it is not particularly limited.It is, for example, possible to use triphenylmethane type epoxy resin, cresol novolac Type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy Resin, modified bisphenol F types epoxy resin, dicyclopentadiene type epoxy resin, phenol novolak type epoxy resin, phenoxy group tree The various epoxy resin such as fat.These epoxy resin can be used alone, and can also use two or more.
From the viewpoint of the reactivity for ensuring epoxy resin, preferably epoxide equivalent is 150~250, softening point or fusing point For 50~130 DEG C be at normal temperatures solid epoxy resin.Wherein, from the viewpoint of reliability, more preferably triphenyl first Alkane type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin.Additionally, it is preferred that bisphenol f type epoxy resin.
As long as the phenolic resin of curing reaction occurs at it between epoxy resin for phenolic resin, just do not limit especially It is fixed.It is, for example, possible to use phenol resol resins, phenol aralkyl resin, biphenyl aralkyl resin, dicyclopentadiene type phenol Urea formaldehyde, cresol novolac resin, resol etc..These phenolic resin can be used alone, can also and with 2 kinds More than.
As phenolic resin, from the viewpoint of the reactivity with epoxy resin, preferably use hydroxyl equivalent for 70~ 250th, softening point is 50~110 DEG C of resin., can be suitably clear using phenol novolac from the viewpoint of solidification reactivity is high Coating resins.In addition, from the viewpoint of reliability, can also suitably use phenol aralkyl resin, biphenyl aralkyl resin Etc agent of low hygroscopicity resin.
Total content of epoxy resin and phenolic resin in thermosetting resin piece 12 is preferably more than 5 weight %.If For more than 5 weight %, then the adhesive tension to semiconductor chip etc. can be obtained well.Asphalt mixtures modified by epoxy resin in thermosetting resin piece 12 Total content of fat and phenolic resin is preferably more preferably below 20 weight % below 40 weight %.If 40 weight % Hereinafter, then hygroscopicity can be suppressed relatively low.
For the mixing ratio of epoxy resin and phenolic resin, from the viewpoint of solidification reactivity, preferably with relative to The equivalent of epoxy radicals 1 in epoxy resin causes the mode for adding up to 0.7~1.5 equivalent of the hydroxyl in phenolic resin to coordinate, more Preferably 0.9~1.2 equivalent.
It is preferred that thermosetting resin piece 12 contains curing accelerator.
As curing accelerator, as long as the material for making epoxy resin be solidified with phenolic resin, is not just limited especially It is fixed, it can for example enumerate 2-methylimidazole (trade name：2MZ), 2- undecyl imidazoles (trade name：C11-Z), 2- 17 Alkyl imidazole (trade name：C17Z), 1,2- methylimidazoles (trade name：1.2DMZ), 2-ethyl-4-methylimidazole (business The name of an article：2E4MZ), 2- phenylimidazoles (trade name：2PZ), 2- phenyl -4-methylimidazole (trade name：2P4MZ), 1- benzyls Base -2-methylimidazole (trade name：1B2MZ), 1- benzyls -2- phenylimidazole (trade names：1B2PZ), 1- cyanoethyls- 2-methylimidazole (trade name：2MZ-CN), 1- cyanoethyls -2- undecyl imidazole (trade names：C11Z-CN), 1- cyanogen Ethyl -2- phenylimidazole trimellitic acid salt (trade names：2PZCNS-PW), 2,4- diaminourea -6- [2 '-methyl miaows Oxazolyl-(1 ')]-ethyl-s-triazine (trade name：2MZ-A), 2,4- diaminourea -6- [2 '-undecyl imidazoles Base-(1 ')]-ethyl-s-triazine (trade name：C11Z-A), 2,4- diaminourea -6- [2 '-ethyl -4 '-methyl miaow Oxazolyl-(1 ')]-ethyl-s-triazine (trade name：2E4MZ-A), 2,4- diaminourea -6- [2 '-methylimidazolyl - (1 ')]-ethyl-s-triazine isocyanuric acid adduct (trade name：2MA-OK), 2- phenyl -4,5- bishydroxymethyl miaow Azoles (trade name：2PHZ-PW), 2- phenyl -4- methyl -5- hydroxymethylimidazole (trade names：The miaow such as 2P4MHZ-PW) Azoles system curing accelerator (being four countries' chemical conversion industry (strain) system).
Wherein, from considering the reasons why suppressing the curing reaction under melting temperature, preferred imidazoles system curing accelerator, more preferably 2- phenyl -4,5- bishydroxymethyls imidazoles, 2,4- diaminourea -6- [2 '-ethyl -4 '-methylimidazolyl - (1 ')]-ethyl-s-triazine, further preferred 2- phenyl -4,5- and hydroxymethylimidazole.
The content of curing accelerator is preferably 0.2 weight relative to total 100 parts by weight of epoxy resin and phenolic resin More than part, more than more preferably 0.5 parts by weight, more than more preferably 0.8 parts by weight.The content of curing accelerator relative to Total 100 parts by weight of epoxy resin and phenolic resin are preferably below 5 parts by weight, below more preferably 2 parts by weight.
Thermosetting resin piece 12 can also contain thermoplastic resin.It is used as thermoplastic resin, preferred elastomer.
As thermoplastic resin, can enumerate natural rubber, butyl rubber, isoprene rubber, neoprene, ethene- Vinyl acetate copolymer, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polybutadiene, poly- carbonic acid Polyamide, phenoxy resin, the acrylic compounds such as ester resin, thermoplastic polyimide resin, 6- nylon or 6,6- nylon The saturated polyester resins such as resin, PET or PBT, polyamide-imide resin, fluororesin, styreneisobutylene-styrene three Block copolymer, MBS (MBS resins) etc..These thermoplastic resins can be with It is used alone or and uses two or more.
The content of thermoplastic resin in thermosetting resin piece 12 is preferably more than 1 weight %.If 1 weight % with On, then it can assign flexibility, flexibility.The content of thermoplastic resin in thermosetting resin piece 12 be preferably 30 weight % with Under, more preferably below 10 weight %, more preferably below 5 weight %., then can be good if below 30 weight % Ground obtains the adhesive tension to semiconductor chip etc..
Thermosetting resin piece 12 can also be beyond the composition also suitably containing flame retardant constituent, pigment etc..
As flame retardant constituent, for example, it can use aluminium hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, hydroxide The various metal hydroxides such as tin, Composite metal hydroxides：Phosphazene compound etc..Wherein, from strong after anti-flammability, solidification The reasons why spending excellent consider, preferably phosphazene compound.
It is not particularly limited as pigment, carbon black etc. can be enumerated.
The manufacture method of thermosetting resin piece 12 is not particularly limited, and will preferably knead each composition (such as asphalt mixtures modified by epoxy resin Fat, phenolic resin, inorganic filling material and curing accelerator etc.) obtained by mixture plastic working be sheet method.Thus, Inorganic filling material can be filled with high density, can be designed that low thermal coefficient of expansion.
Specifically, by by the kneading machine such as epoxy resin, phenolic resin, inorganic filling material and curing accelerator, Kneading machine melting mixing known to adding pressure type kneader, extruder etc. and prepare mixture, by the mixture plastic working of gained For sheet.As compounding conditions, the upper limit of temperature is preferably less than 140 DEG C, more preferably less than 130 DEG C.The lower limit of temperature is excellent It is more than the softening point for electing above-mentioned each composition as, for example, more than 30 DEG C, preferably more than 50 DEG C.The time of mixing is preferably 1 ~30 minutes.In addition, mixing is carried out (under reduced atmosphere) preferably at reduced pressure conditions, the pressure under reduced pressure is, for example, 1 × 10- 4~0.1kg/cm2。
Mixture after melting mixing is not preferably cooled down and carry out plastic working with keeping the condition of high temperature.It is used as plasticity Processing method is not particularly limited, can enumerate flat board pressing, T moulds extrusion molding, screw extrusion, roller rolling process, Roller mixing method, blowing extrusion molding, coetrusion, calendaring molding method etc..It is preferably above-mentioned each composition as plastic working temperature Softening point more than, if it is considered that the thermosetting and formability of epoxy resin, for example, 40~150 DEG C, preferably 50~140 DEG C, more preferably 70~120 DEG C.
It is also preferred that manufacturing thermosetting resin piece 12 using coating method.For example, each composition can be contained by making Adhesive compound solution, adhesive compound solution is coated on base material partition and shape in the way of reaching given thickness Into after coated film, coated film is dried, and manufacture thermosetting resin piece 12.
It is not particularly limited as solvent used in adhesive compound solution, can preferably makes each composition uniform Ground dissolving, mixing or scattered organic solvent.Dimethylformamide, dimethyl acetamide, N- methylpyrroles can for example be enumerated The ketone series solvents such as alkanone, acetone, MEK, cyclohexanone, toluene, dimethylbenzene etc..
As base material partition, polyethylene terephthalate (PET), polyethylene, polypropylene or by fluorine system can be used The removers such as remover, chain alkyl acrylate series stripping agent have carried out plastic foil or paper of surface coating etc..As gluing The coating method of agent composition solution, such as can enumerate rolling method, silk screen coating, intaglio plate coating.In addition, coated film is dry Dry condition is not particularly limited, for example, can be carried out under conditions of 70~160 DEG C of drying temperature, 1~5 minute drying time.
(manufacture method of semiconductor device 54)
In the method for embodiment 1, manufacture Fan-out (is fanned out to) type wafer-class encapsulation part (WLP).
As shown in Fig. 2 layered product 1 possesses chip tacked bodies 11, the thermosetting being configured on chip tacked bodies 11 Property resin sheet 12 and the partition 13 being configured on thermosetting resin piece 12.Layered product 1 is configured in downside heating plate 41 and upside Between heating plate 42.
Chip tacked bodies 11 possess support plate 11a, the interim fixed material 11b being configured on support plate 11a and matched somebody with somebody The semiconductor chip 14 being placed on interim fixed material 11b.
It is not particularly limited as support plate 11a material, the metal material such as example, SUS, polyimides, polyamide acyl Plastic materials such as imines, polyether-ether-ketone, polyether sulfone etc..
It is not particularly limited as interim fixed material 11b material, from considering the reasons why being easily peeled off, preferably Thermally strippable adhesive such as thermally foamable adhesive etc..
The electrode pad 14a that semiconductor chip 14 possesses main part 14b and is configured on main part 14b.Main part 14b's Material is semiconductors such as silicon etc..Second interarea facing by the first interarea and with the first interarea of semiconductor chip 14 defines two Face.Electrode pad 14a is located at the second interarea.Second interarea is contacted with interim fixed material 11b.
As partition 13, polyethylene terephthalate (PET) film etc. can be suitably used.From can be by thermosetting The reasons why resin sheet 12 is easily peeled off from partition 13 considers that partition 13 was preferable to carry out the partition of demoulding processing.
As shown in figure 3, heating plate 41 and upside heating plate 42 utilize parallel flat mode thermo-compression lamination body 1 on the downside of use, Form seal 51.
The temperature of hot pressing is preferably more than 70 DEG C, more preferably more than 80 DEG C.The temperature of hot pressing is preferably less than 170 DEG C, More preferably less than 150 DEG C, more preferably less than 100 DEG C.The pressure of thermo-compression lamination body 1 is preferably more than 1.0MPa, more Preferably more than 1.5MPa.The pressure of thermo-compression lamination body 1 is preferably below 10MPa, more preferably below 8MPa.The time of hot pressing Preferably more than 0.3 minute, more preferably more than 1 minute.In addition, the time of hot pressing is preferably less than 60 minutes, more preferably Less than 10 minutes.
Hot pressing is carried out preferably under reduced atmosphere.By the hot pressing under reduced atmosphere, space can be reduced, can be well Filling is concavo-convex.Pressure under reduced atmosphere is, for example, 0.1kPa~5kPa, 0.1Pa~100Pa etc..
Seal 51 possesses semiconductor chip 14 and covers the thermosetting resin piece 12 of semiconductor chip 14.Seal 51 with Interim fixed material 11b and partition 13 are contacted.
As shown in figure 4, peeling off partition 13 from seal 51.
Then, seal 51 is heated, solidifies thermosetting resin piece 12, firming body 52 is formed.
Heating-up temperature is preferably more than 100 DEG C, more preferably more than 120 DEG C.On the other hand, the upper limit of heating-up temperature is preferred For less than 200 DEG C, more preferably less than 180 DEG C.Heat time is preferably more than 10 minutes, more preferably more than 30 minutes.Separately On the one hand, the upper limit of heat time is preferably less than 180 minutes, more preferably less than 120 minutes.It is preferred that adding under pressured atmosphere Body 51 is heated seal, pressure is preferably more than 0.1MPa, more preferably more than 0.5MPa.On the other hand, the upper limit be preferably 10MPa with Under, more preferably below 5MPa.
As shown in figure 5, firming body 52 possesses semiconductor chip 14 and covers the protection component 21 of semiconductor chip 14.Solidification Body 52 defines two sides by the film predetermined face residing for semiconductor chip 14 and the face facing with film predetermined face.
As shown in fig. 6, after fixing material 11b temporarily in heating and making interim fixed material 11b bonding force reduction, from admittedly Change body 52 and peel off interim fixed material 11b.It it is preferably more than 175 DEG C as the interim fixed material 11b of heating temperature, more preferably For more than 180 DEG C.The upper limit of the interim fixed material 11b of heating temperature is, for example, 200 DEG C.
As shown in fig. 7, can be with the face facing with film predetermined face of grinding firming body 52.By carrying out grinding, it can subtract The warpage of few firming body 52.As grinding method, such as can enumerate and use the polishing of the grinding stone of rotation at a high speed.
As shown in figure 8, forming buffering film 61 in film predetermined face., can be with use feeling as the material of buffering film 61 The polyimides of photosensitiveness, photosensitive polybenzoxazole (PBO) etc..As the method for forming buffering film 61, rotation can be enumerated Coating, die coating method, method of configuration dry film etc. in film predetermined face.
As shown in figure 9, configuring mask 62 on buffering film 61.Then, by from be configured at buffering film 61 top The irradiation exposure light of light source 91, and make buffering film 61 photosensitive.
Then, as shown in Figure 10, buffering film 61 formation opening portion 61A and opening portion 61B, make protection component 21 to Fixed part and electrode pad 14a is exposed.
As shown in figure 11, it is radiated at the protection formation through hole 71 of component 21 using laser.Through hole 71 will protect component 21 Through-thickness runs through.
As shown in figure 12, metal is filled into through hole 71, penetrating electrode 72 is formed.Penetrating electrode 72 along protection component 21 Thickness direction extension.As the metal filled, such as can enumerate Cu, Ag, Au, Sn, eutectic solder.Welded as eutectic Material, such as can use Sn-Ag eutectic solders, Sn-Ag-Cu eutectic solders.
Then, Seed Layer is formed in buffering film 61, electrode pad 14a and penetrating electrode 72.
As shown in figure 13, resist 63 is formed on the seed layer.
As shown in figure 14, using plating such as electrolytic copper platings, plating pattern 64 is formed on the seed layer.
As shown in figure 15, after resist 63 is removed, Seed Layer is etched, completion connects up 65 and connects up 75 again again.
As shown in figure 16,65 are being connected up again and formation diaphragm 66 on 75 is connected up again., can be with as the material of diaphragm 66 Use photosensitive polyimides, photosensitive polybenzoxazole (PBO) etc..
As shown in figure 17, it is open in the formation of diaphragm 66, makes connecting up 65 again and connect up again positioned at the lower section of diaphragm 66 75 expose.Thus, on firming body 52 complete comprising connect up 65 again and connect up again 75 wiring layer 69 again, obtain Wiring body again 53.Again Wiring body 53 possess semiconductor chip 14, be configured at semiconductor chip 14 periphery protection component 21, along protection component 21 thickness direction extends and runs through the penetrating electrode 72 of protection component 21 and be configured at connecting up again on semiconductor chip 14 Layer 69.
As shown in figure 18, formation electrode (UBM on 65 is being connected up again：Under Bump Metal)67.In addition, connecting up again Electrode 77 is formed on 75.
As shown in figure 19, salient point 68 is formed on electrode 67.Salient point 68 is by electrode 67 and connects up 65 and electrode pad again 14a is electrically connected.In addition, forming salient point 78 on electrode 77.Salient point 78 is by electrode 77 and connects up 75 and the electricity of penetrating electrode 72 again Connection.
As shown in figure 20, singualtion (cutting) is carried out to Wiring body 53 again and obtains semiconductor device 54.
As described above, the manufacture method of the semiconductor device 54 of embodiment 1 includes covering half with thermosetting resin piece 12 The process of conductor chip 14.The process for covering semiconductor chip 14 with thermosetting resin piece 12 includes the step pressurizeed to layered product 1 Suddenly.
[embodiment 2]
As shown in figure 21, laminate structure 2 possesses chip installation chip 21, the thermosetting being configured on chip installation chip 21 Property resin sheet 12 and the partition 13 being configured on thermosetting resin piece 12.Laminate structure 2 be configured at downside heating plate 41 with it is upper Between side heating plate 42.
Chip installation chip 21 possesses semiconductor wafer 31 and chip upside-down mounting type is installed (chip upside-down mounting type engagement) and partly led Semiconductor chip 14 on body chip 31.Chip installs chip 21 and is also equipped with being held on semiconductor wafer 31 and semiconductor chip 14 Between underfill 15.
The salient point 14c that semiconductor chip 14 possesses main part 14b and is configured on main part 14b.Main part 14b material For semiconductors such as silicon etc..Semiconductor chip 14 second interarea facing by the first interarea and with the first interarea defines two sides. Salient point 14c is located at the second interarea.
Semiconductor wafer 31 possesses chip portion 31a, the penetrating electrode 31b extended along chip portion 31a thickness direction and matched somebody with somebody The electrode 31c being placed on penetrating electrode 31b.Chip portion 31a material is the semiconductors such as silicon.Semiconductor wafer 31 by electrode surface and The facing back side defines two sides with electrode surface.Electrode 31c is located at the electrode surface of semiconductor wafer 31.
Semiconductor chip 14 is electrically connected with semiconductor wafer 31 by salient point 14c and electrode 31c.
As shown in figure 22, use downside heating plate 41 and upside heating plate 42 are with parallel flat mode thermo-compression lamination structure 2, form seal structure 71.Suitable hot pressing condition is identical with the hot pressing condition illustrated in embodiment 1.Additionally, it is preferred that Hot pressing is carried out under reduced atmosphere.Suitable reduced pressure is identical with the reduced pressure illustrated in embodiment 1.
Seal structure 71 possesses the semiconductor core that semiconductor wafer 31, chip upside-down mounting type are installed on semiconductor wafer 31 Piece 14 and the thermosetting resin piece 12 for covering semiconductor chip 14.Seal structure 71 is contacted with partition 13.
Partition 13 is peeled off from seal structure 71.
Solidify thermosetting resin piece 12 by heating seal structure 71, form consolidated structures body 72.It is suitable to add Heat condition is identical with the heating condition illustrated in embodiment 1.
As shown in figure 23, consolidated structures body 72 possesses semiconductor wafer 31, chip upside-down mounting type and is installed on semiconductor wafer 31 On semiconductor chip 14 and cover semiconductor chip 14 protection component 21.Consolidated structures body 72 is as residing for semiconductor wafer 31 Wafer face and the face facing with wafer face define two sides.
As shown in figure 24, can also grinding and the facing face of wafer face.
As shown in figure 25, by grinding wafer face, and obtain running through structure 73.Possesses through-wafer through structure 73 32nd, chip upside-down mounting type is installed on through-wafer 32 semiconductor chip 14 and be configured at semiconductor chip 14 periphery protection Component 21.Through-wafer 32, which possesses, to be made discoid principal part 32a, extends and through principal part 32a along principal part 32a thickness direction Penetrating electrode 31b and the electrode 31c that is configured on penetrating electrode 31b.Through-wafer 32 is as forming residing for penetrating electrode 31b Face and the face facing with formation face define two sides.
As shown in figure 26, using semi-additive process etc., wiring layer 81 again are formed on formation face, wiring structure again is formed 74.Wiring layer 81 possesses again connects up 82 again.Then, salient point 83 is formed on wiring layer 81 again.Salient point 83 by connecting up 82 again, electricity Pole 31c and penetrating electrode 31b are electrically connected with salient point 14c.Wiring structure 74 possesses through-wafer 32, chip upside-down mounting type and installed again In the semiconductor chip 14 on through-wafer 32, the periphery for being configured at semiconductor chip 14 protection component 21 and be configured at Wiring layer 81 again on formation face.
As shown in figure 27, singualtion (cutting) is carried out to wiring structure 74 again, obtains semiconductor device 75.
(variation 1)
In embodiment 2, chip 21 is installed for chip and is filled between semiconductor chip 14 and semiconductor wafer 31 Underfill 15, and without filling underfill between semiconductor chip 14 and semiconductor wafer 31 in variation 1 Material 15.
As described above, the manufacture method of the semiconductor device 75 of embodiment 2 includes covering half with thermosetting resin piece 12 The process of conductor chip 14.The process for covering semiconductor chip 14 with thermosetting resin piece 12 includes pressurizeing to laminate structure 2 The step of.
[embodiment]
Hereinafter, the suitable embodiment to the present invention carries out exemplary detailed description.But, it is recorded in the embodiment Material, use level etc. recorded as long as no particularly limitative, be not just that the scope of the present invention is only defined in these records The meaning.
The composition used to make resin sheet is illustrated.
Epoxy resin 1：YSLV-80XY (bisphenol f type epoxy resin, the epoxide equivalent 191g/ of Nippon Steel's chemistry (strain) system Eq. 80 DEG C of softening point)
Epoxy resin 2：Epicoat 828 (bisphenol A type epoxy resin, the epoxide equivalent 185g/ of Mitsubishi Chemical's (strain) system eq)
Phenolic resin：Bright and chemical conversion company system MEH-7500-3S (83 DEG C of hydroxyl equivalent 107g/eq., softening point)
Curing accelerator：The 2PHZ-PW (2- phenyl -4,5- bishydroxymethyls imidazoles) of four countries' chemical conversion industry company system
Silica filler B：FB-9454 (melting spherical silicon dioxide, the μ of average grain diameter 20 of electrochemical industry company system 54 μm of m, maximum particle diameter)
Silica filler D：5SDC (melting spherical silicon dioxide, 5 μm of the average grain diameter, most of electrochemical industry company system Big 20 μm of particle diameter)
Silica filler E：3SDC (melting spherical silicon dioxide, 3 μm of the average grain diameter, most of electrochemical industry company system Big 10 μm of particle diameter)
Silica filler G：MSR-8040 (melting spherical silicon dioxide, 11 μm of the average grain diameter, most of the gloomy company system of dragon Big 45 μm of particle diameter)
Alumina packing I：The AL-17-1 (60 μm of alumina packing, average grain diameter) of Showa electrician's company system
Alumina packing J：The DAW-45 (43 μm of alumina packing, average grain diameter) of ElectroChem
Silane coupler：The KBM-403 (3- glycidoxypropyltrime,hoxysilanes) of chemical company of SHIN-ETSU HANTOTAI
Carbon black：The #20 of Mitsubishi Chemical Ind
[making of resin sheet]
According to the match ratio described in table 1, by each components matching, using roller kneading machine 60~120 DEG C, 10 minutes, subtract (0.01kg/cm under the conditions of pressure2) melting mixing is carried out, prepare mixture.Then, mixture is made using flat board pressing Sheet, produces the resin sheet of vertical 200mm, horizontal 230mm, thickness described in table 1.
[table 1]
[evaluating 1 die crack]
(day, east electrician was public from piece for stacking hot soarfing on glass plate (TEMPAX glass, vertical 200mm, horizontal 230mm, thickness 1.1mm) Take charge of the REVALPHA " 3195V " of system, indulge 200mm, horizontal 230mm, 100 μm of thickness).Then, on hot stripping film, multiple silicon cores are configured Piece (vertical 7mm, horizontal 7mm, 200 μm of thickness).Thus, obtain by glass plate, the hot stripping film being configured on glass plate and be configured at heat The chip tacked bodies that silicon on stripping film is constituted.
Then, resin sheet is configured on chip tacked bodies.Thus, obtain by chip tacked bodies and configuration The layered product constituted in the resin sheet on chip tacked bodies.
Then, using parallel flat pressure setting (MIKADO TECHNOS company systems), under vacuum atmosphere, 90 DEG C, plus Pressure pressure 1.0MPa, under conditions of 120 seconds with parallel flat mode to layered product pressurize, thus obtain seal (by silicon And the component of the resin sheet composition of covering silicon).
The section of seal is observed, the situation for not having crackle in silicon is determined as zero.Although will not have in silicon Crackle however can see with the diameter equal with the thickness of the resin on silicon filler, be likely to form and split The situation of line is determined as △.The situation for having crackle in silicon is determined as ×.It the results are shown in Table 1.
[state for evaluating 2 through holes]
Using parallel flat pressure setting (MIKADO TECHNOS company systems), under vacuum atmosphere, 90 DEG C, moulding pressure 1.0MPa, under conditions of 120 seconds with parallel flat mode to resin sheet pressurize, the thickness of resin sheet is thus adjusted to initial The 80% of thickness.Then, resin sheet is kept for 60 minutes at 150 DEG C, thus solidifies resin sheet.
To by make resin sheet solidify obtained by solidfied material, laser is irradiated under the conditions shown in Table 2, the shape in solidfied material Into 50 μm of through hole of diameter.Then, using micro- sem observation solidfied material, it will be observed that the situation of the through hole of round shape is made It is determined as zero (reference picture 28).On the other hand, it will can not obtain being made the situation of the through hole of round shape because of the influence of filler It is determined as × (reference picture 29).It the results are shown in Table 1.
[table 2]
Device The LAVIA 1000W of Sumitomo Heavy Industries
Laser species CO2
Oscillator power 60W
Laser irradiating part power 1.5W
Frequency 500Hz
Spot diameter 0.1mm

Claims (4)

1. a kind of resin combination, it includes filler,
4 times of value of the average grain diameter of the filler is below the thickness of resin combination.
2. resin combination according to claim 1, it is made into sheet.
3. a kind of manufacture method of semiconductor device, it is included with the resin combination covering semiconductor described in claim 1 or 2 The process of chip.
4. a kind of semiconductor device, it is obtained using the method described in claim 3.
CN201580059119.9A 2014-11-07 2015-10-15 Resin combination, the manufacture method of semiconductor device and semiconductor device Pending CN107109069A (en)

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CN110634827A (en) * 2018-06-22 2019-12-31 三星电子株式会社 Semiconductor package

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JP2018104649A (en) * 2016-12-28 2018-07-05 日東電工株式会社 Resin sheet
KR102216172B1 (en) 2017-07-14 2021-02-15 주식회사 엘지화학 Method for manufacturing insulating film and semiconductor package
CN113196470A (en) 2018-12-18 2021-07-30 罗姆股份有限公司 Semiconductor device and method for manufacturing semiconductor device
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