CN107104172A - 一种SiC雪崩光电二极管器件外延材料的制备方法 - Google Patents
一种SiC雪崩光电二极管器件外延材料的制备方法 Download PDFInfo
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- CN107104172A CN107104172A CN201710459925.6A CN201710459925A CN107104172A CN 107104172 A CN107104172 A CN 107104172A CN 201710459925 A CN201710459925 A CN 201710459925A CN 107104172 A CN107104172 A CN 107104172A
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- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000013078 crystal Substances 0.000 claims abstract description 44
- 239000000872 buffer Substances 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000000750 progressive effect Effects 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 71
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 70
- 239000007789 gas Substances 0.000 claims description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- 239000012188 paraffin wax Substances 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 3
- 102100033067 Growth factor receptor-bound protein 2 Human genes 0.000 claims description 3
- 101000871017 Homo sapiens Growth factor receptor-bound protein 2 Proteins 0.000 claims description 3
- 101001120056 Homo sapiens Phosphatidylinositol 3-kinase regulatory subunit alpha Proteins 0.000 claims description 3
- 102100026169 Phosphatidylinositol 3-kinase regulatory subunit alpha Human genes 0.000 claims description 3
- 230000018199 S phase Effects 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 230000001934 delay Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
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- 238000004659 sterilization and disinfection Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201710459925.6A CN107104172B (zh) | 2017-06-17 | 2017-06-17 | 一种SiC雪崩光电二极管器件外延材料的制备方法 |
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CN201710459925.6A CN107104172B (zh) | 2017-06-17 | 2017-06-17 | 一种SiC雪崩光电二极管器件外延材料的制备方法 |
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CN107104172A true CN107104172A (zh) | 2017-08-29 |
CN107104172B CN107104172B (zh) | 2019-09-20 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107578988A (zh) * | 2017-09-13 | 2018-01-12 | 中国电子科技集团公司第十三研究所 | 碳化硅外延层钝化方法 |
CN110047955A (zh) * | 2019-03-08 | 2019-07-23 | 中山大学 | 一种AlGaN紫外雪崩光电二极管探测器及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003077283A2 (en) * | 2002-03-04 | 2003-09-18 | Yale University | Drift-dominated detector |
CN1670917A (zh) * | 2004-03-19 | 2005-09-21 | 索尼株式会社 | 制造化合物半导体的方法和制造半导体器件的方法 |
CN102064187A (zh) * | 2009-11-11 | 2011-05-18 | 中国科学院半导体研究所 | 一种碳化硅同质pin微结构材料及其制作方法 |
CN105225931A (zh) * | 2015-09-30 | 2016-01-06 | 中国电子科技集团公司第四十八研究所 | AlN模板及其生长方法、基于AlN模板的Si基GaN外延结构及其生长方法 |
CN106067493A (zh) * | 2016-07-26 | 2016-11-02 | 中山德华芯片技术有限公司 | 一种微晶格失配量子阱太阳能电池及其制备方法 |
-
2017
- 2017-06-17 CN CN201710459925.6A patent/CN107104172B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003077283A2 (en) * | 2002-03-04 | 2003-09-18 | Yale University | Drift-dominated detector |
CN1670917A (zh) * | 2004-03-19 | 2005-09-21 | 索尼株式会社 | 制造化合物半导体的方法和制造半导体器件的方法 |
CN102064187A (zh) * | 2009-11-11 | 2011-05-18 | 中国科学院半导体研究所 | 一种碳化硅同质pin微结构材料及其制作方法 |
CN105225931A (zh) * | 2015-09-30 | 2016-01-06 | 中国电子科技集团公司第四十八研究所 | AlN模板及其生长方法、基于AlN模板的Si基GaN外延结构及其生长方法 |
CN106067493A (zh) * | 2016-07-26 | 2016-11-02 | 中山德华芯片技术有限公司 | 一种微晶格失配量子阱太阳能电池及其制备方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107578988A (zh) * | 2017-09-13 | 2018-01-12 | 中国电子科技集团公司第十三研究所 | 碳化硅外延层钝化方法 |
WO2019052139A1 (zh) * | 2017-09-13 | 2019-03-21 | 中国电子科技集团公司第十三研究所 | 碳化硅外延层钝化方法 |
US11183385B2 (en) | 2017-09-13 | 2021-11-23 | The 13Th Research Institute Of China Electronics | Method for passivating silicon carbide epitaxial layer |
CN110047955A (zh) * | 2019-03-08 | 2019-07-23 | 中山大学 | 一种AlGaN紫外雪崩光电二极管探测器及其制备方法 |
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Denomination of invention: Preparation of epitaxial material for SiC avalanche photodiode Effective date of registration: 20200730 Granted publication date: 20190920 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: Y2020980004594 |
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Address after: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee after: Guangdong Tianyu Semiconductor Co.,Ltd. Address before: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee before: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Date of cancellation: 20230406 Granted publication date: 20190920 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: Y2020980004594 |
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Denomination of invention: A Preparation Method for Epitaxial Materials of SiC Avalanche Photodiode Devices Effective date of registration: 20230512 Granted publication date: 20190920 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: Guangdong Tianyu Semiconductor Co.,Ltd. Registration number: Y2023980040499 |
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