CN107104170A - A kind of two-sided crystal silicon solar batteries print system - Google Patents
A kind of two-sided crystal silicon solar batteries print system Download PDFInfo
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- CN107104170A CN107104170A CN201710122422.XA CN201710122422A CN107104170A CN 107104170 A CN107104170 A CN 107104170A CN 201710122422 A CN201710122422 A CN 201710122422A CN 107104170 A CN107104170 A CN 107104170A
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- printing zone
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 166
- 239000010703 silicon Substances 0.000 title claims abstract description 166
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 163
- 239000013078 crystal Substances 0.000 title claims abstract description 34
- 238000007639 printing Methods 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 39
- 230000008569 process Effects 0.000 claims abstract description 37
- 238000001035 drying Methods 0.000 claims abstract description 16
- 230000007306 turnover Effects 0.000 claims abstract description 13
- 239000011267 electrode slurry Substances 0.000 claims abstract description 5
- 239000002002 slurry Substances 0.000 claims abstract description 5
- 229940037003 alum Drugs 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000013519 translation Methods 0.000 claims description 6
- 150000003376 silicon Chemical class 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000006872 improvement Effects 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of two-sided crystal silicon solar batteries print system, including print station, the baking zone for drying electrode slurry, arranged on print station and around the periphery of baking zone at least two Printing Zones, for clamping silicon chip two ends and silicon chip being transferred to the clamping conveying arrangement between baking zone and Printing Zone.Each Printing Zone sets a screen process press for the slurry that prints electrode, the turning device for being used for overturning silicon chip is provided with one of Printing Zone, when the silicon chip of completion drying needs to carry out back face printing, the silicon chip for completing drying is transferred to turning device by clamping conveying arrangement, and turning device is by silicon wafer turnover and is transferred on the screen process press being in it in same Printing Zone and carries out electrode print.When ensuring to print a face electrode of double-sided solar battery using the print system of the present invention, the electrode of another side will not be worn, and effectively improve the crudy of double-sided solar battery.
Description
Technical field
The present invention relates to the technical field of processing equipment of solar cell, more particularly to a kind of two-sided crystal silicon solar batteries
Print system.
Background technology
In photovoltaic solar industry, the manufacture of solar cell will by making herbs into wool, diffusion, etching, plated film, silk-screen printing with
And sintering etc. process.Wherein, the purpose of silkscreen process is printed electrode slurry in the front and back of solar cell, so
By oversintering process, by the slurry curing being printed on battery into battery electrode.
The print steps of the solar cell of prior art be generally the back of the body silver printing, drying, Al-BSF printing, drying and just
Be between electrode print, each step by belt transport, because conventional solar cell is all one side solar cell, front
Electrode print be placed on last one of printing process, it is to avoid the pattern of positive electrode grid line is destroyed, so as to avoid influenceing battery
Outward appearance and photoelectric transformation efficiency.
But, for two-sided crystal silicon solar batteries, front and back will absorb sunshine, in order to realize that the back side is inhaled
Light, it is necessary to set a plurality of alum gate line be arrangeding in parallel at the back side of solar cell, in the existing one side solar cell of replacement entirely
Al-BSF, so two-sided crystal silicon solar batteries are in screen printing process, the electrode pattern on battery two sides is required for being protected,
Print steps and supporting printing equipment according to prior art, then in print positive electrode grid line, the back of the body of solar cell
Directly and belt contacts, the silver-colored main grid of the back of the body at the back side and the unavoidable generation between meeting and belt of alum gate line rub during belt transport in face
Wipe, if serious can even break the silver-colored main grid of the back of the body and alum gate line, the silver-colored main grid of the back of the body and alum gate line of damage will necessarily reduce light
Photoelectric transformation efficiency；In addition, during using Belt Conveying, multiple printing machines and dryer are usually to be set gradually along straight line, now,
The place taken needed for equipment is larger, and for the market that space expenses are high, high processing cost is necessarily brought in big place, and
And it is not easy to operating personnel's operation.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of two-sided crystal silicon solar batteries print system, to improve
The quality of two-sided crystal silicon solar batteries processing.
The technical problems to be solved by the invention are also resided in there is provided a kind of two-sided crystal silicon solar batteries print system, its
Compact conformation, reduces the volume of equipment, reduces production cost, is easy to operating personnel to operate.
The technical problems to be solved by the invention are also resided in there is provided a kind of two-sided crystal silicon solar batteries print system, are carried
High efficiency.
In order to solve the above-mentioned technical problem, it is described the invention provides a kind of two-sided crystal silicon solar batteries print system
Two-sided crystal silicon solar batteries include stacking gradually the back side silicon nitride of connection, backside oxide aluminium film, silicon body, hair from bottom to up
Emitter-base bandgap grading, front side silicon nitride film and positive silver electrode, and the silver-colored main grid of the back of the body and alum gate line located at the silicon body back side；
The print system includes print station, the baking zone for drying electrode slurry, on print station and around baking zone
Periphery arrangement at least two Printing Zones, for clamping silicon chip two ends and silicon chip being transferred to the folder between baking zone and Printing Zone
Hold conveying arrangement；
Each Printing Zone, which sets to be provided with a screen process press for the slurry that prints electrode, one of Printing Zone, to be used to turn over
Turn the turning device of silicon chip, when the silicon chip of completion drying needs to carry out back face printing, clamping conveying arrangement will complete the silicon dried
Piece is transferred to turning device, and turning device is by silicon wafer turnover and is transferred to the screen process press being in it in same Printing Zone
Upper carry out electrode print.
As the improvement of such scheme, the baking zone is located at the center of print station, at least two Printing Zone
Along the circumferential uniform arrangement of baking zone.
As the improvement of such scheme, the clamping conveying arrangement is mechanical arm, and the end of the mechanical arm is provided with two
Spaced U-shaped clamping part, the U-lag of the U-shaped clamping part is horizontally disposed with；
The upper surface of the objective table of screen process press is provided with the groove stretched into for the bottom of U-shaped clamping part；Or, the screen printing
The objective table of brush machine is provided with the lifting column for lifting silicon chip, and when lifting column rises, the bottom of the U-shaped clamping part is stretched into
In gap between silicon chip and objective table；
When needing the silicon chip on screen process press being transferred to baking zone, groove or silicon are stretched into the bottom of the U-shaped clamping part
In gap between piece and objective table, so that silicon chip is placed in the U-lag of U-shaped clamping part.
As the improvement of such scheme, the U-lag inwall of the U-shaped clamping part is provided with neonychium.
As the improvement of such scheme, the mechanical arm is provided with one；
Or, each Printing Zone is correspondingly arranged a mechanical arm, and mechanical arm is used to transfer the silicon chip in corresponding Printing Zone.
As the improvement of such scheme, the turning device is located between screen process press and baking zone, and it includes two
The upset fan blade be arrangeding in parallel and the transfer mechanism for the silicon chip after upset to be transferred to screen process press, the upset wind
Leaf is set provided with some upset screens grooves, radial direction of the upset screens groove along upset fan blade；
During work, the upset fan blade rotates one of upset screens groove to the horizontal direction towards baking zone, the folder
Hold conveying arrangement to transfer silicon chip in so far tumble card position groove, upset fan blade drives silicon chip to revolve upwards and to screen process press direction
Go to after being paused after level, this silicon chip is transferred on the objective table of screen process press by the transfer mechanism.
As the improvement of such scheme, the transfer mechanism includes driven in translation component, below four corners of silicon chip
Jacking post, during work, the jacking post rises to be contacted with silicon chip, and the driven in translation Component driver jacking post is to screen printing
Brush machine direction moves to the printing position of objective table；
Or, the transfer mechanism is belt transmission agency, and the belt transmission agency includes two conveyer belts, two conveyer belts
Located at the outside of upset fan blade, when silicon wafer turnover to horizontal level, silicon chip is placed on conveyer belt and is sent to by conveyer belt
The printing position of objective table.
As the improvement of such scheme, the upset screens groove dorsad direction of rotation side be provided with rotatory dislocation plate, when
During silicon wafer turnover to setting position, the rotatory dislocation plate rotates to an angle to the direction of rotation of rotating vane.
As the improvement of such scheme, the angle that the upset screens groove is provided between 4, adjacent upset screens groove is
90 °, the upset fan blade is often rotated by 90 ° pause once；
Or, the angle that the upset screens groove is provided between 6, adjacent upset screens groove is 60 °, and the upset fan blade often revolves
Turn 60 ° to pause once.
As the improvement of such scheme, the Printing Zone is provided with three, respectively the first Printing Zone, the second Printing Zone and the
Three Printing Zones, first Printing Zone is used to print the silver-colored main grid of the back of the body, and second Printing Zone is used to print alum gate line, the described 3rd
Printing Zone is used to print positive silver electrode；
Or, the Printing Zone is provided with four, respectively the first Printing Zone, the second Printing Zone, the 3rd Printing Zone and the 4th printing
Area, first Printing Zone is used to print the silver-colored main grid of the back of the body, and second Printing Zone is used to print alum gate line, the 3rd Printing Zone
For printing front main grid, the 4th Printing Zone is used to print positive attached grid.
Implement embodiments of the invention, have the advantages that：
1st, two-sided crystal silicon solar batteries of the present invention are provided with a plurality of alum gate line be arrangeding in parallel in cell backside, not only substitute
Full aluminum back electric field realizes that the secondary grid structure that the function of back side extinction is also served as in back of the body silver electrode is used in existing one side solar cell
In conduction electronics.Two-sided crystal silicon solar batteries of the present invention are made, the consumption of silver paste and aluminium paste can be saved, reduction is produced into
This, and two-sided absorption luminous energy is realized, it is significantly expanded the application of solar cell and improves photoelectric transformation efficiency；
2nd, print system of the invention is directed to the printing of two-sided crystal silicon solar batteries electrode, and one side is too compared with the prior art
The belt transport of positive energy battery, the present invention transfers silicon chip by clamping conveying arrangement, is to press from both sides during clamping conveying arrangement transfer silicon chip
Hold the two ends of silicon chip, it is ensured that during any surface electrode of printing double-side cell, another side electrode will not be worn, improve silicon chip processing
Quality；
3rd, multiple Printing Zones of the invention are arranged around baking zone, silicon chip printed in Printing Zone after by clamping conveying arrangement
Baking zone is transferred to, multiple Printing Zones need to only match a baking zone, be set compared with the prior art along belt transmission device
Multiple baking zones are put, the present invention effectively saves drying plant；
4th, the present invention is using the form of Printing Zone winding baking zone, and its compact conformation is not the structure of strip, more conducively place
Layout, in addition, operating personnel administration scope it is relatively small, be easy to it to operate.
Brief description of the drawings
Fig. 1 is the structural representation of two-sided crystal silicon solar batteries of the invention；
Fig. 2 is the another structural representation of two-sided crystal silicon solar batteries of the invention；
Fig. 3 is the distribution schematic diagram of each part of print system of the present invention；
Fig. 4 is the part-structure schematic diagram of screen process press of the present invention and turning device；
Fig. 5 is the structural representation of U-shaped clamping part of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
It is described in detail on step ground.Only this is stated, the side such as the up, down, left, right, before and after of the invention that occurs in the text or will appear from, inside and outside
Position word, only on the basis of the accompanying drawing of the present invention, it is not the specific restriction to the present invention.
Existing one side solar cell is covered in the whole back side of silicon body provided with full aluminum back electric field at the back side of battery, entirely
The effect of aluminum back electric field is to improve open-circuit voltage Voc and short circuit current flow Jsc, forces minority carrier away from surface, Shao Shuozai
Sub- recombination rate reduction is flowed, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, with full aluminium
The rear surface of solar cell of back of the body electric field can not absorb luminous energy, can only front absorption luminous energy, the synthesis photoelectric transformation efficiency hardly possible of battery
To be greatly improved.
It is described referring to shown in accompanying drawing 1 and accompanying drawing 2 and the print system of the present invention is directed to two-sided crystal silicon solar battery
Two-sided crystal silicon solar batteries include stacking gradually the back side silicon nitride 13, backside oxide aluminium film 14, silicon of connection from bottom to up
Body 15, emitter stage 16, front side silicon nitride film 17 and positive silver electrode 18, and the silver-colored main grid 11 of the back of the body and alum gate located at the back side of silicon body 15
Line 12；What the back side silicon nitride 13 and backside oxide aluminium film 14 formed that 30-500 be arranged in parallel after lbg swashs
At least 1 group lbg unit is set in light slotted zones 19, each lbg area 19；The alum gate line 12 passes through lbg
Area 19 is connected with silicon body 15；Main grid 11 is vertical is connected with back of the body silver for the alum gate line 12.Wherein silicon body 15 is P-type silicon body 15 or N
Type silicon body 15, the emitter stage 16 is corresponding N-type emitter stage 16 or p-type emitter stage 16, i.e. double-sided solar of the invention
Battery can be N-type or p-type.
As the improvement of above-mentioned technical proposal, when setting 2 groups or more than 2 groups lbg units in each lbg area
When, each group lbg unit be arranged in parallel, and the spacing between two adjacent groups lbg unit is 5-480 μm.
The present invention is improved to existing one side solar cell, no longer provided with full aluminum back electric field, but is become
Many alum gate lines 12, using opening up lbg in lbg technology overleaf silicon nitride film 13 and backside oxide aluminium film 14
Area 19, and alum gate line 12 is printed in the lbg area 19 that these be arranged in parallel, so as to form localized contact with silicon body 15,
The alum gate line 12 of intensive parallel arrangement can not only play raising open-circuit voltage Voc and short circuit current flow Jsc, and reduction minority carrier is answered
Conjunction rate, improves the effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure, and alum gate line
12 do not cover the back side of silicon body 15 comprehensively, and sunshine can be projected in silicon body 15 between alum gate line 12, so as to realize silicon body
15 back sides absorb luminous energy, greatly improve the photoelectric transformation efficiency of battery.Two-sided crystal silicon solar batteries of the present invention are in battery
The back side is provided with a plurality of alum gate line 12 be arrangeding in parallel, not only substitutes full aluminum back electric field in existing one side solar cell and realizes the back side
The secondary grid structure that the function of extinction is also served as in back of the body silver electrode is used to conduct electronics.Make two-sided crystal silicon solar of the present invention
Battery, can save the consumption of silver paste and aluminium paste, reduce production cost, and realize two-sided absorption luminous energy, be significantly expanded solar energy
The application and raising photoelectric transformation efficiency of battery.
The preparation method of the two-sided crystal silicon solar batteries of the present invention is as follows（It is introduced by taking P-type silicon as an example）：
（1）In silicon body front and back formation matte.
From wet method or dry etching technology, matte is formed in silicon body surface face by etching device.
（2）It is diffused in silicon body front, forms N-type emitter stage corresponding with silicon body phase.
The diffusion technique that preparation method of the present invention is used is that silicon body is placed in thermal diffusion furnace to be diffused, in silicon body
Top formed emitter stage, temperature should control during diffusion in the range of 800 DEG C -900 DEG C, target block resistance be 90-150
Europe/.
In diffusion process can silicon chip silicon body front and back formation phosphorosilicate glass layer, the formation of phosphorosilicate glass layer be by
In in diffusion process, POCl3 and O2 reaction generations P2O5 is deposited on silicon body surface face.P2O5 and Si reacts generates SiO2 and phosphorus again
Atom, thus in silicon chip silicon chip surface one layer of SiO2 containing P elements of formation, referred to as phosphorosilicate glass.The phosphorosilicate glass
Layer can diffusion when collect silicon chip silicon body in impurity, can further reduce the impurity content of solar cell.
（3）The phosphorosilicate glass and periphery P N knots of diffusion process formation are removed, and the silicon body back side is polished（Polishing must
Shouldn't）.
It is 1 that silicon body after diffusion is placed in volume ratio by the present invention:5 HF（Mass fraction >=45%）And HNO3（Quality point
Number >=60%）15s is soaked in mixed solution acid tank and removes phosphorosilicate glass and periphery P N knots.The presence of phosphorosilicate glass layer is easily caused
In PECVD aberration and coming off for SixNy, and the phosphorosilicate glass layer containing substantial amounts of phosphorus and migrated from silicon body it is miscellaneous
Matter, it is therefore desirable to remove phosphorosilicate glass layer.
It should be noted that the step of being polished to silicon chip back side considers whether to carry out depending on actual conditions.
（4）In silicon body backside deposition pellumina and silicon nitride film.
（5）In the positive silicon nitride film of silicon body body.
Above-mentioned pellumina and silicon nitride film deposition step can be set using conventional PECVD device, ALD equipment or APCVD
The standby silicon nitride film on the silicon body back side and front successively.It should be noted that step（4）And step（5）Order can be overturned
Exchange.
（6）To carrying out lbg on the silicon nitride film and pellumina at the silicon body back side.Silicon chip is formed after this step,
Electrode is formed by carrying out printing drying to silicon chip.
Slotted using lbg technology on the silicon nitride film and pellumina of silicon chip back side, groove depth is until p-type
Silicon lower surface.Preferably, the width in the lbg area is 10-500 μm.
（7）The silver-colored main grid paste of the back up back of the body, drying.
According to the silver-colored main grid paste of the pattern printing back of the body of the silver-colored main grid of the back of the body.The pattern of the silver-colored main grid of the back of the body is continuous straight grid；Or institute
The silver-colored main grid of the back of the body is stated to set in space segmentation；Or the silver-colored main grid of the back of the body is set in space segmentation, and communication line is passed through between each adjacent sectional
Connection.
（8）Aluminium paste is printed in lbg area, is allowed to back of the body silver that main grid paste is vertical is connected.
（9）Positive silver electrode paste is printed in front side of silicon wafer.
（10）High temperature sintering is carried out to silicon chip, the silver-colored main grid of the back of the body, alum gate line and positive silver electrode is formed.
Preferably, the width of alum gate line is 30-550 μm；The width of the silver-colored main grid of the back of the body is 0.5-5mm；The root of the alum gate line
Number is 30-500 bars；The radical of the silver-colored main grid of the back of the body is 2-8 bars.
（11）Anti- LID annealing is carried out to silicon chip, p-type PERC double-sided solar batteries are made.
Referring to accompanying drawing 3 to accompanying drawing 5, the invention discloses a kind of two-sided crystal silicon solar batteries print system, including printing
Platform 2, the baking zone 3 for drying electrode slurry, at least two prints arranged on print station 2 and around the periphery of baking zone 3
Brush area, for clamping silicon chip two ends and silicon chip being transferred into the clamping conveying arrangement 4 between baking zone 3 and Printing Zone, clamping fortune
Defeated device 4 is preferred to use mechanical arm.The print station 2 can be circle, quadrangle, pentagon or hexagon, according to place
Suitable shape is selected etc. factor.
Each Printing Zone sets in a screen process press 21 for the slurry that prints electrode, one of Printing Zone and is provided with
Turning device 22 for overturning silicon chip, when the silicon chip of completion drying needs to carry out back face printing, clamping conveying arrangement 4 will completion
The silicon chip of drying is transferred to turning device 22, and turning device 22 is by silicon wafer turnover and is transferred to it in same Printing Zone
Screen process press 21 on carry out electrode print.The screen process press 21 uses the existing printing machine of prior art, bag
Objective table 210, doctor assemblies 220 are included, the drive mechanism 230 of doctor assemblies 220, the wherein driving of drive mechanism 230 scraper is driven
Component 220 is lifted and horizontal reciprocating movement, is not described in detail herein.
It is preferred that, the baking zone 3 is located at the center of print station 2, and at least two Printing Zone is along baking zone 3
Circumferential uniform arrangement.The present invention improves the efficiency of printing and drying by baking zone 3 and the multiple print stations 2 of rationally arranging.
As the preferred embodiment of clamping conveying arrangement 4, the clamping conveying arrangement 4 is mechanical arm, the mechanical arm
End provided with two spaced U-shaped clamping parts 41, the U-lag of the U-shaped clamping part 41 is horizontally disposed with；U-shaped clamping part
41 two ends for clamping silicon chip.The U-lag inwall of the U-shaped clamping part 41 is preferably provided with neonychium 42, passes through neonychium 42
Silicon chip is protected.The clamping conveying arrangement 4 of the present invention can also can realize the device of conveying using other.
Accordingly, in order to realize that U-shaped clamping part 41 clamps silicon chip, screen process press 21 of the invention on objective table 210
It is preferred to use following two designs：
The first design, the upper surface of the objective table 210 of screen process press 21, which is provided with, supplies the bottom of U-shaped clamping part 41 to stretch into
Groove（Do not shown in accompanying drawing）；At this time, it may be necessary to when the silicon chip on screen process press 21 is transferred into baking zone 3, the U-clamp
The bottom for holding portion 41 is stretched into groove, so that silicon chip is placed in the U-lag of U-shaped clamping part 41, then, U-shaped clamping part 41 rises
The silicon chip on objective table 210 can be removed；
Second of design, the objective table 210 of the screen process press 21 is provided with the lifting column 211 for lifting silicon chip,
When lifting column 211 rises, the bottom of the U-shaped clamping part 41 is stretched into the gap between silicon chip and objective table 210；Needing will
When silicon chip on screen process press 21 is transferred to baking zone 3, silicon chip and objective table 210 are stretched into the bottom of the U-shaped clamping part 41
Between gap in so that silicon chip is placed in the U-lag of U-shaped clamping part 41, then, U-shaped clamping part 41, which rises, can remove load
Silicon chip on thing platform 210.
Further, the opposite face of two U-shaped clamping parts 41 is provided with the safety screen 43 for preventing that silicon chip from sliding, in transfer silicon
Prevent silicon chip from falling sideways during piece.
Wherein, above-mentioned mechanical arm can select to be provided with one；Or, each Printing Zone is correspondingly arranged a mechanical arm, machine
Tool arm is used to transfer the silicon chip in corresponding Printing Zone.When selecting the second way, the working range of mechanical arm is relative
It is smaller, and without waiting for the time between each, operating efficiency can be improved.
The turning device 22 of the present invention is described in detail below.
Specifically, the turning device 22 is located between screen process press 21 and baking zone 3, it includes two and be arranged in parallel
Upset fan blade 221 and transfer mechanism 222 for the silicon chip after upset to be transferred to screen process press 21, the upset wind
Leaf 221 is set provided with some upset screens grooves 2210, radial direction of the upset screens groove 2210 along upset fan blade 221, i.e.,
Upset fan blade is separated into sector structure by upset screens groove 2210.
During work, the upset fan blade 221 rotates one of upset screens groove 2210 to the level towards baking zone 3
Direction, the clamping conveying arrangement 4 transfers silicon chip in so far tumble card position groove 2210, and upset fan blade 221 drives silicon chip upward
And rotated to the direction of screen process press 21 to level after pause, this silicon chip is transferred to silk-screen printing by the transfer mechanism 222
On the objective table 210 of machine 21.
Wherein, the transfer mechanism 222 is preferred to use following two embodiments：
The first embodiment, the transfer mechanism 222 includes driven in translation component, the jacking below four corners of silicon chip
Post, during work, the jacking post rises to be contacted with silicon chip, and the driven in translation Component driver jacking post is to screen process press 21
Direction moves to the printing position of objective table 210；It is transferred to after objective table 210, the jacking post declines；
Second of embodiment, the transfer mechanism 222 is belt transmission agency, and the belt transmission agency includes two transmission
Band, two conveyer belts are located at the outside of upset fan blade 221, and when silicon wafer turnover to horizontal level, silicon chip is placed on conveyer belt simultaneously
The printing position of objective table 210 is sent to by conveyer belt.During using belt transmission agency, elevating mechanism is preferably provided with（In accompanying drawing
Do not show）, declined by elevating mechanism drive belt transport mechanism, prevent belt from influenceing the swabbing of silicon chip on objective table 210.
It should be noted that no matter using the silicon chip on which kind of above-mentioned scheme transfer upset fan blade 221, in the transfer of silicon chip
During can have certain friction with upset screens groove 2210 unavoidably, in order to reduce friction, improve product quality, it is of the invention in institute
The side for stating the dorsad direction of rotation of upset screens groove 2210 is provided with rotatory dislocation plate, described when silicon wafer turnover to setting position
Rotatory dislocation plate rotates to an angle to the direction of rotation of rotating vane.This angle is typically chosen low-angle, wherein rotating
The rotation of dislocation plate can work as silicon wafer turnover extremely using motor control, magnetic-type structure or spring structure etc. as long as can realize
After horizontal level, rotatory dislocation plate is rotated down minute angle.
In order to improve efficiency, upset screens groove 2210 of the present invention is preferably provided with 4 or 6.
When the upset screens groove 2210 is provided with 4, the angle between adjacent upset screens groove 2210 is 90 °, described
Upset fan blade 221 is often rotated by 90 ° pause once；Now, upset fan blade 221 is often rotated by 90 ° last material, and next time simultaneously
Material；
When the upset screens groove 2210 is provided with 6, the adjacent angle overturn between screens groove 2210 is 60 °, the upset wind
Leaf 221 often rotates 60 ° and paused once；Now, upset fan blade 221 often rotates 60 ° of last material, and next defective material, efficiency simultaneously
It is higher.
Wherein, the number of Printing Zone of the invention is preferably following two embodiments according to concrete technology：
The first embodiment, the Printing Zone is provided with three, respectively the first Printing Zone, the second Printing Zone and the 3rd printing
Area, first Printing Zone is used to print the silver-colored main grid 11 of the back of the body, and second Printing Zone is used to print alum gate line 12, the 3rd print
Brush area is used to print positive silver electrode 18；
Second of embodiment, the Printing Zone is provided with four, respectively the first Printing Zone, the second Printing Zone, the 3rd Printing Zone
With the 4th Printing Zone, first Printing Zone is used to print the silver-colored main grid 11 of the back of the body, and second Printing Zone is used to print alum gate line 12,
3rd Printing Zone is used to print front main grid, and the 4th Printing Zone is used to print positive attached grid.
Print station of the present invention can also set two Printing Zones or more 5,6 etc., both the above implementation
Mode is intended only as two kinds of preferred embodiments during real work.
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (10)
1. a kind of two-sided crystal silicon solar batteries print system, it is characterised in that the two-sided crystal silicon solar batteries include from
Under the supreme back side silicon nitride for stacking gradually connection, backside oxide aluminium film, silicon body, emitter stage, front side silicon nitride film and positive silver
Electrode, and the silver-colored main grid of the back of the body and alum gate line located at the silicon body back side；
The print system includes print station, the baking zone for drying electrode slurry, on print station and around baking zone
Periphery arrangement at least two Printing Zones, for clamping silicon chip two ends and silicon chip being transferred to the folder between baking zone and Printing Zone
Hold conveying arrangement；
Each Printing Zone, which sets to be provided with a screen process press for the slurry that prints electrode, one of Printing Zone, to be used to turn over
Turn the turning device of silicon chip, when the silicon chip of completion drying needs to carry out back face printing, clamping conveying arrangement will complete the silicon dried
Piece is transferred to turning device, and turning device is by silicon wafer turnover and is transferred to the screen process press being in it in same Printing Zone
Upper carry out electrode print.
2. two-sided crystal silicon solar batteries print system according to claim 1, it is characterised in that the baking zone is located at
The center of print station, circumferential uniform arrangement of at least two Printing Zone along baking zone.
3. two-sided crystal silicon solar batteries print system according to claim 1, it is characterised in that the clamping transport dress
Mechanical arm is set to, the end of the mechanical arm is provided with two spaced U-shaped clamping parts, the U-lag water of the U-shaped clamping part
It is flat to set；
The upper surface of the objective table of screen process press is provided with the groove stretched into for the bottom of U-shaped clamping part；Or, the screen printing
The objective table of brush machine is provided with the lifting column for lifting silicon chip, and when lifting column rises, the bottom of the U-shaped clamping part is stretched into
In gap between silicon chip and objective table；
When needing the silicon chip on screen process press being transferred to baking zone, groove or silicon are stretched into the bottom of the U-shaped clamping part
In gap between piece and objective table, so that silicon chip is placed in the U-lag of U-shaped clamping part.
4. two-sided crystal silicon solar batteries print system according to claim 3, it is characterised in that the U-shaped clamping part
U-lag inwall be provided with neonychium.
5. two-sided crystal silicon solar batteries print system according to claim 3, it is characterised in that the mechanical arm is provided with
One；
Or, each Printing Zone is correspondingly arranged a mechanical arm, and mechanical arm is used to transfer the silicon chip in corresponding Printing Zone.
6. two-sided crystal silicon solar batteries print system according to claim 1, it is characterised in that the turning device is set
Between screen process press and baking zone, it includes two upset fan blades be arrangeding in parallel and for the silicon chip after upset to be moved
The transfer mechanism of screen process press is delivered to, the upset fan blade is provided with some upset screens grooves, upset screens groove edge upset
The radial direction of fan blade is set；
During work, the upset fan blade rotates one of upset screens groove to the horizontal direction towards baking zone, the folder
Hold conveying arrangement to transfer silicon chip in so far tumble card position groove, upset fan blade drives silicon chip to revolve upwards and to screen process press direction
Go to after being paused after level, this silicon chip is transferred on the objective table of screen process press by the transfer mechanism.
7. two-sided crystal silicon solar batteries print system according to claim 6, it is characterised in that the transfer mechanism bag
Driven in translation component, the jacking post below four corners of silicon chip are included, during work, the jacking post rises to be connect with silicon chip
Touch, the driven in translation Component driver jacking post moves to the printing position of objective table to screen process press direction；
Or, the transfer mechanism is belt transmission agency, and the belt transmission agency includes two conveyer belts, two conveyer belts
Located at the outside of upset fan blade, when silicon wafer turnover to horizontal level, silicon chip is placed on conveyer belt and is sent to by conveyer belt
The printing position of objective table.
8. two-sided crystal silicon solar batteries print system according to claim 7, it is characterised in that the upset screens groove
Dorsad the side of direction of rotation is provided with rotatory dislocation plate, when silicon wafer turnover to setting position, and the rotatory dislocation plate is to rotation
The direction of rotation of blade rotates to an angle.
9. the two-sided crystal silicon solar batteries print system according to any one of claim 6 to 8, it is characterised in that described
Overturn screens groove and be provided with 4, the adjacent angle overturn between screens groove is 90 °, the upset fan blade is often rotated by 90 ° pause one
It is secondary；
Or, the angle that the upset screens groove is provided between 6, adjacent upset screens groove is 60 °, and the upset fan blade often revolves
Turn 60 ° to pause once.
10. the two-sided crystal silicon solar batteries print system according to any one of claim 1 to 8, it is characterised in that described
Printing Zone is provided with three, and respectively the first Printing Zone, the second Printing Zone and the 3rd Printing Zone, first Printing Zone are used to print
The silver-colored main grid of the back of the body, second Printing Zone is used to print alum gate line, and the 3rd Printing Zone is used to print positive silver electrode；
Or, the Printing Zone is provided with four, respectively the first Printing Zone, the second Printing Zone, the 3rd Printing Zone and the 4th printing
Area, first Printing Zone is used to print the silver-colored main grid of the back of the body, and second Printing Zone is used to print alum gate line, the 3rd Printing Zone
For printing front main grid, the 4th Printing Zone is used to print positive attached grid.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710122422.XA CN107104170B (en) | 2017-03-03 | 2017-03-03 | Two-sided crystalline silicon solar cell printing system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710122422.XA CN107104170B (en) | 2017-03-03 | 2017-03-03 | Two-sided crystalline silicon solar cell printing system |
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| CN107104170A true CN107104170A (en) | 2017-08-29 |
| CN107104170B CN107104170B (en) | 2020-03-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710122422.XA Active CN107104170B (en) | 2017-03-03 | 2017-03-03 | Two-sided crystalline silicon solar cell printing system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112510115A (en) * | 2020-11-30 | 2021-03-16 | 浙江鸿禧能源股份有限公司 | Clamping mechanism for screen printing of double-sided battery |
| CN113442563A (en) * | 2021-07-30 | 2021-09-28 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Screen printing system and screen printing method |
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| WO2014154592A1 (en) * | 2013-03-28 | 2014-10-02 | JRT Photovoltaics GmbH & Co. KG | Screen printing system for printing flat substrates, in particular solar cells, and method for printing substrates |
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| DE2718635A1 (en) * | 1977-04-27 | 1978-11-02 | Neckarprint Gmbh Siebdruckmasc | Multi-colour screen printing machine with single drying station - moves sheet to drying station after each colour printing |
| CN102886973A (en) * | 2011-06-06 | 2013-01-23 | 应用材料意大利有限公司 | Support and transport unit for a print substrate for a plant for depositing print tracks, and relative deposition method |
| CN202130111U (en) * | 2011-06-15 | 2012-02-01 | 湖南红太阳光电科技有限公司 | Plate overturning device for crystalline silicon solar battery screen print equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112510115A (en) * | 2020-11-30 | 2021-03-16 | 浙江鸿禧能源股份有限公司 | Clamping mechanism for screen printing of double-sided battery |
| CN112510115B (en) * | 2020-11-30 | 2022-01-25 | 浙江鸿禧能源股份有限公司 | Clamping mechanism for screen printing of double-sided battery |
| CN113442563A (en) * | 2021-07-30 | 2021-09-28 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Screen printing system and screen printing method |
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|---|---|
| CN107104170B (en) | 2020-03-13 |
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Address after: No.69, area C, Sanshui Industrial Park, Foshan City, Guangdong Province 528000 Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address after: 528000 No.3, South Qili Avenue, Leping Town, Sanshui District, Foshan City, Guangdong Province (application for residence) Patentee after: Guangdong aixu Technology Co.,Ltd. Address before: No.69, area C, Sanshui Industrial Park, Foshan City, Guangdong Province 528000 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |