Utility model content
Technical problem to be solved in the utility model is, there is provided a kind of rotary double-side crystal silicon solar batteries printing
System, improve the quality of two-sided crystal silicon solar batteries processing.
Technical problem to be solved in the utility model also resides in, there is provided a kind of rotary double-side crystal silicon solar batteries print
Brush system, its is compact-sized, reduces the volume of equipment, reduces production cost, human users easy to operation.
Technical problem to be solved in the utility model also resides in, there is provided a kind of rotary double-side crystal silicon solar batteries print
Brush system, improve production efficiency.
In order to solve the above-mentioned technical problem, the utility model provides a kind of rotary double-side crystal silicon solar batteries printing
System, including print station, the baking zone for drying electrode slurry, circumferentially uniformly arranging on print station and along baking zone
At least two Printing Zones, for clamping silicon chip both ends and silicon chip being transferred into clamping between baking zone and Printing Zone transport dress
Put, the print station can be rotated centered on baking zone relative to baking zone, and the clamping conveying arrangement is fixed in baking zone;
Each Printing Zone sets a screen process press for the slurry that prints electrode, and is provided with and uses in one of Printing Zone
In the turning device of upset silicon chip, when completing the silicon chip of drying needs to carry out back face printing, clamping conveying arrangement will be completed to dry
Silicon chip be transferred to turning device, turning device is by silicon wafer turnover and is transferred to the screen printing being in it in same Printing Zone
Electrode print is carried out on brush machine.
As the improvement of such scheme, the two-sided crystal silicon solar batteries include the back of the body for stacking gradually connection from bottom to up
Face silicon nitride film, backside oxide aluminium film, silicon body, emitter stage, front side silicon nitride film and positive silver electrode, and located at the silicon body back side
Carry on the back silver-colored main grid and alum gate line;
The back side silicon nitride and backside oxide aluminium film form 30-500 lbg area after lbg, often
At least 1 group of lbg unit is set in individual lbg area, and the alum gate line is connected by lbg area and silicon body phase;It is described
Alum gate line is with carrying on the back silver-colored main grid vertical connection.
As the improvement of such scheme, the print station drives it to be rotated relative to baking zone by rotating driving device, institute
State rotating driving device include motor, be fixedly connected with motor output shaft driving wheel, engaged with driving wheel be connected first from
Driving wheel and at least two second driven pulleys being connected with the first driven pulley by belt, first driven pulley and second driven
Wheel is fixed at the lower section of print station by connecting shaft and is uniformly distributed around the circumference of baking zone.
As the improvement of such scheme, the clamping conveying arrangement is mechanical arm, and the end of the mechanical arm is provided with two
Spaced U-shaped clamping part, the U-lag of the U-shaped clamping part are horizontally disposed with;
The upper surface of the objective table of screen process press is provided with the groove stretched into for the bottom of U-shaped clamping part;Or the silk
The objective table of net printing machine is provided with the lifting column for lifting silicon chip, when lifting column rises, the bottom of the U-shaped clamping part
Stretch into the gap between silicon chip and objective table;
When needing the silicon chip on screen process press being transferred to baking zone, the bottom of the U-shaped clamping part stretch into groove or
In gap between person's silicon chip and objective table, so that silicon chip is placed in the U-lag of U-shaped clamping part.
As the improvement of such scheme, the U-lag inwall of the U-shaped clamping part is provided with neonychium.
As the improvement of such scheme, the turning device is located between screen process press and baking zone, and it includes two
The upset fan blade be arrangeding in parallel and the transfer mechanism for the silicon chip after upset to be transferred to screen process press, the upset wind
Leaf is provided with some upset screens grooves, and radial direction of the upset screens groove along upset fan blade is set;
During work, the upset fan blade rotates one of upset screens groove to the horizontal direction towards baking zone, institute
Clamping conveying arrangement is stated by silicon chip transfer so far in the groove of tumble card position, upset fan blade drives silicon chip upwards and to screen process press side
After being paused after to rotation to level, this silicon chip is transferred on the objective table of screen process press by the transfer mechanism.
As the improvement of such scheme, the transfer mechanism includes driven in translation component, below four corners of silicon chip
Jacking post, during work, the jacking post rises to be contacted with silicon chip, and the driven in translation Component driver jacking post is to screen printing
Brush machine direction moves to the printing position of objective table;
Or the transfer mechanism is belt transmission agency, the belt transmission agency includes two conveyer belts, two biographies
Sending band, when silicon wafer turnover to horizontal level, silicon chip is placed on conveyer belt and passed by conveyer belt located at the outside of upset fan blade
Deliver to the printing position of objective table.
As the improvement of such scheme, the upset screens groove is provided with rotatory dislocation plate backwards to the side of direction of rotation, when
During silicon wafer turnover to setting position, the rotatory dislocation plate rotates to an angle to the direction of rotation of rotating vane.
As the improvement of such scheme, provided with 4, the angle between adjacent upset screens groove is the upset screens groove
90 °, the upset fan blade is often rotated by 90 ° pause once;
Or the upset screens groove is provided with 6, the adjacent angle overturn between screens groove is 60 °, the upset fan blade
60 ° are often rotated to pause once.
As the improvement of such scheme, the Printing Zone is provided with three, respectively the first Printing Zone, the second Printing Zone and the
Three Printing Zones, first Printing Zone, which is used to print, carries on the back silver-colored main grid, and second Printing Zone is used to printing alum gate line, and the described 3rd
Printing Zone is used to print positive silver electrode;
Or the Printing Zone is provided with four, respectively the first Printing Zone, the second Printing Zone, the 3rd Printing Zone and the 4th
Printing Zone, first Printing Zone, which is used to print, carries on the back silver-colored main grid, and second Printing Zone is used to print alum gate line, the 3rd print
Brush area is used to print front main grid, and the 4th Printing Zone is used to print the attached grid in front.
Implement embodiment of the present utility model, have the advantages that:
1st, two-sided crystal silicon solar batteries described in the utility model are provided with a plurality of alum gate line be arrangeding in parallel in cell backside,
Not only substitute full aluminum back electric field in existing one side solar cell and realize that the function of back side extinction also serves as the pair in back of the body silver electrode
Grid structure is used to conduct electronics.Two-sided crystal silicon solar batteries described in the utility model are made, silver paste and the use of aluminium paste can be saved
Amount, production cost is reduced, and realize two-sided absorption luminous energy, be significantly expanded the application of solar cell and improve photoelectricity turn
Change efficiency;
2nd, print system of the present utility model is directed to the printing of two-sided crystal silicon solar batteries electrode, relatively existing skill
The belt transport of art one side solar cell, the utility model transfer silicon chip by clamping conveying arrangement, and clamping conveying arrangement moves
It is the both ends for clamping silicon chip when sending silicon chip, it is ensured that when printing any surface electrode of double-side cell, another side electrode will not be worn,
Improve the quality of silicon chip processing;
3rd, the multiple Printing Zones of the utility model are arranged around baking zone, and silicon chip passes through clamping after being printed in Printing Zone
Conveying arrangement is transferred to baking zone, and multiple Printing Zones need to only match a baking zone, and belt transport fills compared with the prior art
Multiple baking zones are set along putting, the utility model effectively saves drying plant;
4th, the utility model uses the form of Printing Zone winding baking zone, and its is compact-sized, is not the structure of strip, more
Beneficial to the layout in place, in addition, the scope of operating personnel's administration is relatively small, it is easy to its operation;
5th, print station of the present utility model is the structure around baking zone central rotation, general only to need supporting clamping transport
Device, it is simple in construction, it is easy to operate.
Embodiment
It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer
Type is described in further detail.Only this state, the utility model occur in the text or will appear from upper and lower, left and right, it is preceding,
Afterwards, the orientation such as inside and outside word, only on the basis of accompanying drawing of the present utility model, it is not to specific restriction of the present utility model.
Existing one side solar cell is provided with the whole back side that full aluminum back electric field is covered in silicon body at the back side of battery, entirely
The effect of aluminum back electric field is to improve open-circuit voltage Voc and short circuit current Jsc, forces minority carrier away from surface, Shao Shuozai
Flowing sub- recombination rate reduces, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, there is full aluminium
The rear surface of solar cell of back of the body electric field can not absorb luminous energy, positive can only absorb luminous energy, and the synthesis photoelectric transformation efficiency of battery is difficult
To be greatly improved.
And print system of the present utility model is directed to two-sided crystal silicon solar battery, referring to shown in accompanying drawing 1 and accompanying drawing 2,
The two-sided crystal silicon solar batteries include stacking gradually back side silicon nitride 13, the backside oxide aluminium film of connection from bottom to up
14th, silicon body 15, emitter stage 16, front side silicon nitride film 17 and positive silver electrode 18, and the back of the body silver main grid 11 located at the back side of silicon body 15
With alum gate line 12;The back side silicon nitride 13 forms after lbg that 30-500 groups are parallel to be set with backside oxide aluminium film 14
The lbg area 19 put, each lbg area 19 is interior to set at least 1 group of lbg unit;The alum gate line 12 is by swashing
Light slotted zones 19 are connected with silicon body 15;The alum gate line 12 is with carrying on the back the silver-colored vertical connection of main grid 11.Wherein silicon body 15 is P-type silicon body 15
Or N-type silicon body 15, the emitter stage 16 is corresponding N-type emitter stage 16 or p-type emitter stage 16, i.e., of the present utility model double
Face solar cell can be N-type or p-type.
As the improvement of above-mentioned technical proposal, when setting 2 groups or more than 2 groups lbg units in each lbg area
When, each group lbg unit be arranged in parallel, and the spacing between two adjacent groups lbg unit is 5-480 μm.
The utility model is improved to existing one side solar cell, no longer provided with full aluminum back electric field, but by its
Become many alum gate lines 12, laser is overleaf opened up in silicon nitride film 13 and backside oxide aluminium film 14 using lbg technology
Slotted zones 19, and alum gate line 12 is printed in the lbg area 19 that these be arranged in parallel, so as to form part with silicon body 15
Contact, the alum gate line 12 of intensive parallel arrangement, which can not only play, improves open-circuit voltage Voc and short circuit current Jsc, reduces a small number of carry
Flow sub- recombination rate, improve the effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure, and
Alum gate line 12 does not cover the back side of silicon body 15 comprehensively, and sunshine can be projected in silicon body 15 between alum gate line 12, so as to real
The existing back side of silicon body 15 absorbs luminous energy, greatly improves the photoelectric transformation efficiency of battery.Two-sided crystal silicon solar described in the utility model
Battery is provided with a plurality of alum gate line 12 be arrangeding in parallel in cell backside, not only substitutes full aluminium back of the body electricity in existing one side solar cell
Realize that the secondary grid structure that the function of back side extinction is also served as in back of the body silver electrode is used to conduct electronics in field.Make described in the utility model
Two-sided crystal silicon solar batteries, silver paste and the dosage of aluminium paste can be saved, reduce production cost, and realize two-sided absorption luminous energy,
It is significantly expanded the application of solar cell and improves photoelectric transformation efficiency.
The preparation method of the two-sided crystal silicon solar batteries of the utility model is as follows(It is introduced by taking P-type silicon as an example):
(1)Matte is formed in silicon body front and back.
From wet method or dry etching technology, matte is formed in silicon body surface face by etching device.
(2)It is diffused in silicon body front, forms N-type emitter stage corresponding with silicon body phase.
The diffusion technique that preparation method described in the utility model uses is that silicon body is placed in thermal diffusion furnace to be diffused,
The top of silicon body forms emitter stage, and should controlling control temperature during diffusion, target block resistance is in the range of 800 DEG C -900 DEG C
90-150 Europe/.
Can form phosphorosilicate glass layer in the front and back of silicon chip silicon body in diffusion process, the formation of phosphorosilicate glass layer be by
In in diffusion process, POCl3 and O2 reaction generations P2O5 is deposited on silicon body surface face.P2O5 and Si reactions generate SiO2 and phosphorus again
Atom, thus form one layer of SiO2 containing P elements, referred to as phosphorosilicate glass in silicon chip silicon chip surface.The phosphorosilicate glass
Layer can collect silicon chip silicon body in diffusion in impurity, can further reduce the impurity content of solar cell.
(3)Phosphorosilicate glass and periphery P N knots that diffusion process is formed are removed, and the silicon body back side is polished(Polishing must
Shouldn't).
Silicon body after diffusion is placed in volume ratio as 1 by the utility model:5 HF(Mass fraction >=45%)And HNO3(Matter
Measure fraction >=60%)15s is soaked in mixed solution acid tank and removes phosphorosilicate glass and periphery P N knots.The presence of phosphorosilicate glass layer is easy
Cause PECVD aberration and coming off for SixNy, and migrated in the phosphorosilicate glass layer containing substantial amounts of phosphorus and from silicon body
Impurity, it is therefore desirable to remove phosphorosilicate glass layer.
It should be noted that the step of being polished to silicon chip back side considers whether to carry out depending on actual conditions.
(4)In silicon body backside deposition pellumina and silicon nitride film.
(5)In silicon body body front silicon nitride film.
Above-mentioned pellumina and silicon nitride film deposition step can use conventional PECVD device, ALD equipment or APCVD to set
The standby silicon nitride film on the silicon body back side and front successively.It should be noted that step(4)And step(5)Order can overturn
Exchange.
(6)To carrying out lbg on the silicon nitride film and pellumina at the silicon body back side.Silicon chip is formed after this step,
Electrode is formed by carrying out printing drying to silicon chip.
Slotted using lbg technology on the silicon nitride film and pellumina of silicon chip back side, groove depth is until p-type
Silicon lower surface.Preferably, the width in the lbg area is 10-500 μm.
(7)Back up carries on the back silver-colored main grid paste, drying.
Pattern printing according to silver-colored main grid is carried on the back carries on the back silver-colored main grid paste.The pattern of the silver-colored main grid of the back of the body is continuous straight grid;Or institute
The silver-colored main grid of the back of the body is stated to set in space segmentation;Or the silver-colored main grid of the back of the body is set in space segmentation, passes through communication line between each adjacent sectional
Connection.
(8)Aluminium paste is printed in lbg area, is allowed to carrying on the back silver-colored main grid paste vertical connection.
(9)Positive silver electrode paste is printed in front side of silicon wafer.
(10)High temperature sintering is carried out to silicon chip, is formed and carries on the back silver-colored main grid, alum gate line and positive silver electrode.
Preferably, the width of alum gate line is 30-550 μm;The width for carrying on the back silver-colored main grid is 0.5-5mm;The root of the alum gate line
Number is 30-500 bars;The radical of the silver-colored main grid of the back of the body is 2-8 bars.
(11)Anti- LID annealing is carried out to silicon chip, p-type PERC double-sided solar batteries are made.
Referring to accompanying drawing 3 to accompanying drawing 6, the utility model discloses a kind of two-sided crystal silicon solar batteries print system, including
Print station 2, the baking zone 3 for drying electrode slurry, on print station 2 and along baking zone 3 circumference uniformly arrange to
Lack two Printing Zones, for clamping silicon chip both ends and silicon chip being transferred to the clamping conveying arrangement between baking zone 3 and Printing Zone
4, clamping conveying arrangement 4 preferably uses mechanical arm, and the print station can be rotated centered on baking zone relative to baking zone, the folder
Conveying arrangement is held to be fixed in baking zone.The print station 2 can be circle, quadrangle, pentagon or hexagon, according to
The factors such as place select suitable shape.
Each Printing Zone sets a screen process press 21 for the slurry that prints electrode, and is provided with one of Printing Zone
For overturning the turning device 22 of silicon chip, when completing the silicon chip of drying needs to carry out back face printing, clamping conveying arrangement 4 will be completed
The silicon chip of drying is transferred to turning device 22, and silicon wafer turnover and being transferred to is in same Printing Zone by turning device 22 with it
Screen process press 21 on carry out electrode print.The screen process press 21 uses the existing printing machine of prior art, bag
Objective table 210, doctor assemblies 220 are included, drive the drive mechanism 230 of doctor assemblies 220, wherein drive mechanism 230 drives scraper
Component 220 lifts and horizontal reciprocating movement, is not described in detail herein.
Preferably, the baking zone 3 is located at the center of print station 2, and at least two Printing Zone is along baking zone 3
Circumferential uniformly arrangement.The utility model improves printing and the effect dried by baking zone 3 and the multiple print stations 2 of rationally arranging
Rate.
Wherein, the print station 2 drives it to be rotated relative to baking zone by rotating driving device, the rotating driving device
The driving wheel 52 that is fixedly connected including motor 51, with motor output shaft, engaged with driving wheel 52 the first driven pulley 53 for being connected with
And at least two second driven pulleys 55 being connected with the first driven pulley 53 by belt 54, first driven pulley 53 and second from
Driving wheel 55 is fixed at the lower section of print station 2 and 3 around baking zone by connecting shaft 56 and is circumferentially uniformly distributed.
As the preferred embodiment of clamping conveying arrangement 4, the clamping conveying arrangement 4 is mechanical arm, the mechanical arm
End be provided with two spaced U-shaped clamping parts 41, the U-lag of the U-shaped clamping part 41 is horizontally disposed with;U-shaped clamping part
41 both ends for clamping silicon chip.The U-lag inwall of the U-shaped clamping part 41 is preferably provided with neonychium 42, passes through neonychium 42
Silicon chip is protected.Clamping conveying arrangement 4 of the present utility model can also use other to realize the device of conveying.
Accordingly, in order to realize that U-shaped clamping part 41 clamps silicon chip, silk-screen printing of the present utility model on objective table 210
Machine 21 preferably uses following two designs:
The first design, the upper surface of the objective table 210 of screen process press 21 are provided with the bottom for U-shaped clamping part 41
The groove stretched into(Do not shown in accompanying drawing);At this time, it may be necessary to when the silicon chip on screen process press 21 is transferred into baking zone 3, the U
The bottom of shape clamping part 41 is stretched into groove, so that silicon chip is placed in the U-lag of U-shaped clamping part 41, then, U-shaped clamping part 41
Rise the silicon chip that can be removed on objective table 210;
Second of design, the objective table 210 of the screen process press 21 are provided with the lifting column for lifting silicon chip
211, when lifting column 211 rises, the bottom of the U-shaped clamping part 41 is stretched into the gap between silicon chip and objective table 210;Need
When silicon chip on screen process press 21 is transferred into baking zone 3, silicon chip and objective table are stretched into the bottom of the U-shaped clamping part 41
In gap between 210, so that silicon chip is placed in the U-lag of U-shaped clamping part 41, then, U-shaped clamping part 41, which rises, to be removed
Silicon chip on objective table 210.
Further, the opposite face of two U-shaped clamping parts 41 is provided with the safety screen 43 for preventing that silicon chip from sliding, in transfer silicon
Prevent silicon chip from falling sideways during piece.
Wherein, above-mentioned mechanical arm can select to be provided with one;Or baking zone corresponds to each Printing Zone and sets a machinery
Arm, mechanical arm are used to transfer the silicon chip in corresponding Printing Zone.
Turning device 22 of the present utility model is described in detail below.
Specifically, the turning device 22 is located between screen process press 21 and baking zone 3, it includes two and be arranged in parallel
Upset fan blade 221 and transfer mechanism 222 for the silicon chip after upset to be transferred to screen process press 21, the upset wind
Leaf 221 is provided with some upset screens grooves 2210, and radial direction of the upset screens groove 2210 along upset fan blade 221 is set, i.e.,
Upset fan blade is separated into sector structure by upset screens groove 2210.
During work, the upset fan blade 221 rotates one of upset screens groove 2210 to the level towards baking zone 3
Direction, the clamping conveying arrangement 4 transfer silicon chip so far in tumble card position groove 2210, and upset fan blade 221 drives silicon chip upward
And after being paused after being rotated to the direction of screen process press 21 to level, this silicon chip is transferred to silk-screen printing by the transfer mechanism 222
On the objective table 210 of machine 21.
Wherein, the transfer mechanism 222 preferably uses following two embodiments:
The first embodiment, the transfer mechanism 222 include driven in translation component, below four corners of silicon chip
Jacking post, during work, the jacking post rises to be contacted with silicon chip, and the driven in translation Component driver jacking post is to silk-screen printing
The direction of machine 21 moves to the printing position of objective table 210;After being transferred to objective table 210, the jacking post declines;
Second of embodiment, the transfer mechanism 222 are belt transmission agency, and the belt transmission agency includes two
Conveyer belt, two conveyer belts are located at the outside of upset fan blade 221, and when silicon wafer turnover to horizontal level, silicon chip is placed in conveyer belt
Printing position upper and that objective table 210 is sent to by conveyer belt.During using belt transmission agency, elevating mechanism is preferably provided with(It is attached
Do not shown in figure), declined by elevating mechanism drive belt transport mechanism, prevent belt from influenceing the brush of silicon chip on objective table 210
Slurry.
It should be noted that no matter using the silicon chip on which kind of above-mentioned scheme transfer upset fan blade 221, in the transfer of silicon chip
During unavoidably can with upset screens groove 2210 have certain friction, in order to reduce friction, improve product quality, the utility model
Rotatory dislocation plate is provided with backwards to the side of direction of rotation in the upset screens groove 2210, when silicon wafer turnover to setting position,
The rotatory dislocation plate rotates to an angle to the direction of rotation of rotating vane.This angle is typically chosen low-angle, wherein
The rotation of rotatory dislocation plate can use motor control, magnetic-type structure or spring structure etc., as long as can realize when silicon chip turns over
After going to horizontal level, rotatory dislocation plate is rotated down minute angle.
In order to improve efficiency, upset screens groove 2210 described in the utility model is preferably provided with 4 or 6.
When the upset screens groove 2210 is provided with 4, the angle between adjacent upset screens groove 2210 is 90 °, described
Upset fan blade 221 is often rotated by 90 ° pause once;Now, upset fan blade 221 is often rotated by 90 ° last material, and next time simultaneously
Material;
When the upset screens groove 2210 is provided with 6, the adjacent angle overturn between screens groove 2210 is 60 °, described to turn over
Turn fan blade 221 and often rotate 60 ° of pauses once;Now, upset fan blade 221 often rotates 60 ° of last material, and next defective material simultaneously,
It is more efficient.
Wherein, the number of Printing Zone of the present utility model is preferably following two embodiments according to concrete technology:
The first embodiment, the Printing Zone are provided with three, respectively the first Printing Zone, the second Printing Zone and the 3rd print
Brush area, first Printing Zone, which is used to print, carries on the back silver-colored main grid 11, and second Printing Zone is used to printing alum gate line 12, and the described 3rd
Printing Zone is used to print positive silver electrode 18;
Second of embodiment, the Printing Zone are provided with four, respectively the first Printing Zone, the second Printing Zone, the 3rd print
Area and the 4th Printing Zone are brushed, first Printing Zone, which is used to print, carries on the back silver-colored main grid 11, and second Printing Zone is used to print alum gate
Line 12, the 3rd Printing Zone are used to print front main grid, and the 4th Printing Zone is used to print the attached grid in front.
Print station described in the utility model can also set two Printing Zones or it is more 5,6 etc., both the above
Embodiment is intended only as two kinds of preferred embodiments during real work.
Described above is preferred embodiment of the present utility model, it is noted that for the ordinary skill of the art
For personnel, on the premise of the utility model principle is not departed from, some improvements and modifications can also be made, these are improved and profit
Decorations are also considered as the scope of protection of the utility model.