CN107091695A - Ultra-low power consumption intelligent temperature sensor front-end circuit and its matching process - Google Patents
Ultra-low power consumption intelligent temperature sensor front-end circuit and its matching process Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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- H—ELECTRICITY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
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Abstract
The present invention provides a kind of ultra-low power consumption intelligent temperature sensor front-end circuit and its matching process, the front-end circuit includes biasing circuit and bipolar transistor discharge circuit, it is characterized in also including Dynamic Matching module and two groups of mirror current sources, every group of mirror current source includes the P+1 unit current sources for being used to export a unit constant current, and the Dynamic Matching module is used to be allocated above-mentioned every group of mirror current source.The present invention is using 2* (P+1) the individual cycle as a circulation, all load mirror current sources in the Pre Bias circuits of ultra-low power consumption intelligent temperature sensor front-end circuit and Bipolar Core circuits are subjected to dynamic device matching, circuit structure is clear, it is easy to implement, the Δ VBE errors caused by current source mismatch are significantly reduced, so that the output temperature error of sensor is able to geometry level reduction.
Description
Technical Field
The invention relates to a front-end circuit of an ultra-low power consumption intelligent temperature sensor and a matching method of the front-end circuit, and belongs to the technical field of electric power.
Background
In the age of the rapid development of the science and technology of the internet of things, the sensor is used as a foundation stone of the industry of the internet of things and becomes an essential part in the life of people. Temperature sensors, as the earliest and most mature sensor type, also play an increasingly important role in social production life. According to statistics, the temperature sensor used by each family can be dozens of temperature sensors on average, and examples of the application of the temperature sensor can be seen everywhere whether the temperature sensor is an air conditioner, a refrigerator, a mobile phone or a computer, and whether the temperature sensor is an electronic product or an electric product.
The intelligent temperature sensor as the latest generation temperature sensor has a series of advantages of high precision, digital output, programmability and the like. Although the ADC may generate some error in the smart temperature sensor circuit, the main sources of the overall system error and non-linearity factors are the front-end circuits, including the pre-bias circuit and the bipolar-core circuit. Only if the output voltage of the front-end circuit has enough linearity, the error of the output temperature of the intelligent temperature sensor can be ensured to be small enough.
According to the knowledge of the inventor, only the DEM technology is adopted in the bipolar core circuit at present, but the linearity of the output voltage of the matching mode is not high, and the error of the output temperature of the sensor is still large.
Disclosure of Invention
The invention aims to: aiming at the problems in the prior art, the intelligent temperature sensor front-end circuit and the matching method of the front-end circuit are provided, wherein the circuit structure is clear and simple, higher voltage difference linearity can be provided, and the whole output temperature error is greatly reduced.
In order to achieve the above purpose, the ultra-low power consumption intelligent temperature sensor front-end circuit of the invention comprises a bias circuit and a bipolar transistor operational amplifier circuit, and is characterized in that: the dynamic matching module and the two groups of mirror current sources are further included, and each group of mirror current sources comprises P +1 unit current sources for outputting a unit constant current;
the dynamic matching module is used for distributing each group of mirror current sources, and distributing the two groups of mirror current sources into two independent unit current sources and two distributed current sources comprising P unit current sources;
the bias circuit comprises a first bipolar transistor connected with a resistor Rb in series and a second bipolar transistor connected with the first bipolar transistor in parallel, wherein the base of the second bipolar transistor is connected with the base of the first bipolar transistor;
the bipolar transistor operational amplifier circuit comprises a third bipolar transistor and a fourth bipolar transistor which are connected in parallel, and bases of the third bipolar transistor and the fourth bipolar transistor are connected;
the first bipolar transistor and the third bipolar transistor are respectively used for receiving the independent unit current sources, and the second bipolar transistor and the fourth bipolar transistor are respectively used for receiving the P distribution current sources and respectively outputting corresponding voltage quantities.
Furthermore, the front-end circuit of the ultra-low power consumption intelligent temperature sensor further comprises a clock circuit connected with the dynamic matching module and used for generating a first clock phase signal and a second clock phase signal with a level opposite to that of the first clock phase signal; preferably, the first bipolar transistor, the second bipolar transistor, the third bipolar transistor, and the fourth bipolar transistor are PNP transistors.
Furthermore, the ultra-low power consumption intelligent temperature sensor front-end circuit further comprises a chopper operational amplifier circuit connected between the first bipolar transistor branch and the second bipolar transistor branch, wherein a resistor R β is further connected in series to the base of the second bipolar transistor, and the resistor R β is 1/5 which is the resistance of the resistor Rb.
Still preferably, in the front-end circuit of the ultra-low power consumption intelligent temperature sensor, the dynamic matching module uses a single-pole four-way switch, each group of mirror current sources includes 6 unit current sources, and each distributed current source is 5 times of an independent unit current source.
The invention also relates to a matching method of the front-end circuit of the ultra-low power consumption intelligent temperature sensor, which comprises the following steps:
in the first step, 2 x (P +1) unit current sources of two groups of mirror current sources are numbered from 1, 2, 3 … … 2 x (P + 1);
secondly, when the dynamic matching module receives the first clock phase signal, the single-pole four-pole switch is adjusted, and the No. 1 unit current source is input into a first bipolar transistor branch circuit; the No. 2-P +1 unit current source is input into a second bipolar transistor branch, the No. P +2 unit current source is input into a third bipolar transistor branch, the No. P + 3-2 (P +1) unit current source is input into a fourth bipolar transistor branch, and the voltage difference of the two branches of the bipolar transistor operational amplifier circuit is calculated according to a formula;
thirdly, when the dynamic matching module receives the second clock phase signal, adjusting the single-pole four-way switch, inputting the No. 2X (P +1) unit current source into the first bipolar transistor branch, inputting the No. 1 to P unit current source into the second bipolar transistor branch, inputting the No. P +1 unit current source into the third bipolar transistor branch, inputting the No. P +2 to 2P +1 unit current source into the fourth bipolar transistor branch, calculating the voltage difference between the two branches of the bipolar transistor operational amplifier circuit according to a formula, and repeating the second step;
fourthly, repeating the third step until the signal input period of 12 unit current sources is completed;
fifthly, the analog-to-digital conversion integrator obtains an output X by calculating the ratio of the output voltage VBE of the front-end circuit to the delta VBE, and the back-end digital circuit obtains the actual temperature by calibrating and fitting the X.
In the calculation process, the collector current ratio of the left branch and the right branch of the bipolar transistor operational amplifier circuit is ICR: ICL ═ 1: p, and the voltage difference between the collectors of the left branch and the right branch is delta VBESatisfies the following relationship:
the current ratio is 1: p, a total of p +1 current sources are provided, and the current value of each current source is as follows:
Ii＝I(1+i),1≤i≤p+1
where I is the error of the ith current source, representing the mismatch of this current source with the average I. Therefore, the error should be 0, i.e.:
the current ratio between the left side and the right side is:
the error in Δ VBE due to current source mismatch is formulated as:
taylor expansion is carried out on the error, and the average error of third-order and high-order terms delta VBE is changed into:
the invention innovates the front-end circuit of the ultra-low power consumption intelligent temperature sensor, and dynamically matches all load mirror current sources in a bias circuit in the front-end circuit and a bipolar transistor operational amplifier circuit, and has the advantages that:
(1) the invention takes 2 × P +1 cycles as a cycle, and dynamically matches the current sources in the Pre-Bias circuit and the Bipolar-Core circuit respectively, the circuit structure is clear, the implementation is convenient, and the error of delta VBE caused by the mismatch of the current sources is greatly reduced.
(2) Compared with the prior art that only the front-end circuit of the DEM technology is adopted in the Bipolar Core circuit, the DEM is realized in the Pre-Bias circuit, and 2-x (P +1) working states are provided in the Bipolar-Core circuit, so that mismatch is averaged in more choices.
(3) The invention can provide more selection possibilities, on one hand, the system error caused by the mismatching of the load mirror current source of the front-end circuit can be reduced, on the other hand, the output error between chips can be reduced, and higher matching degree is provided, so that the output temperature error of the sensor is reduced in geometric grade.
Drawings
The technical scheme of the invention is further explained by combining the attached drawings. Wherein,
FIG. 1 is a block diagram of an ultra low power smart temperature sensor circuit system;
FIG. 2 is a schematic diagram of the front end circuit of the ultra-low power intelligent temperature sensor of the present invention;
fig. 3 is a schematic diagram of the circuit connection between the dynamic matching module and the front-end circuit components according to the present invention.
Detailed Description
The invention discloses a front-end circuit of an ultra-low power consumption intelligent temperature sensor, as shown in figure 1, a circuit system of the ultra-low power consumption intelligent temperature sensor comprises an analog-to-digital conversion integrator, a Pre-Bias circuit (Bias circuit) and a bipolar-core circuit (bipolar transistor operational amplifier circuit), wherein: the bias circuit and the bipolar transistor operational amplifier circuit are front-end circuits.
According to the technical solution of the present invention, as shown in fig. 2, the front-end circuit further includes a dynamic matching module and two sets of mirror current sources, each set of mirror current sources includes 6 unit current sources for outputting a unit constant current, the dynamic matching module is configured to distribute the above-mentioned each set of mirror current sources, and the two sets of mirror current sources are distributed into two independent unit current sources and two distributed current sources including 5 unit current sources.
The bias circuit comprises a first bipolar transistor connected in series with a resistor Rb and a second bipolar transistor connected in parallel with the first bipolar transistor, wherein the base of the second bipolar transistor is connected with the base of the first bipolar transistor, and the base of the second bipolar transistor is also connected in series with a resistor R beta. Since the current amplification factor β of the PNP transistor is limited and current flows from the emitter, the ratio of the collector current IC of the PNP transistor is not completely equal to the ratio of the emitter current. The new circuit can eliminate the influence of beta on IC by introducing R beta-Rb/5 resistance.
The bipolar transistor operational amplifier circuit comprises a third bipolar transistor and a fourth bipolar transistor which are connected in parallel; the base electrodes of the third bipolar transistor and the fourth bipolar transistor are connected; the first bipolar transistor and the third bipolar transistor are respectively used for receiving independent unit current sources; the second bipolar transistor and the fourth bipolar transistor are respectively used for receiving 5 distribution current sources; and outputs corresponding voltage quantities, respectively.
The dynamic matching module is used for generating a first clock phase signal and a second clock phase signal with the level opposite to that of the first clock phase. Meanwhile, because the operational amplifier has equivalent input offset, the voltages at two ends cannot be completely equal, and the offset of the operational amplifier can be effectively eliminated by introducing a chopping mode. Therefore, a chopper operational amplifier circuit is connected between the first bipolar transistor branch and the second bipolar transistor branch.
The application also relates to a matching method of the ultra-low power consumption intelligent temperature sensor front-end circuit, as shown in fig. 3, the dynamic matching module adopts a single-pole four-handle switch and carries out matching according to the following steps:
firstly, 12 unit current sources of two groups of mirror current sources are numbered from 1, 2 and 3 … … 12, each unit current source is correspondingly connected with a single-pole four-way switch, a first contact of each single-pole four-way switch is connected to form a first branch 1, a second contact of each single-pole four-way switch is connected to form a second branch 2, a third contact of each single-pole four-way switch is connected to form a third branch 3, and a fourth contact of each single-pole four-way switch is connected to form a fourth branch 4.
Secondly, when the dynamic matching module receives the first clock phase signal, a knife of a first single-knife four-way switch is turned on to a first contact, a No. 1 unit current source is input into a first bipolar transistor branch, knives of second to sixth single-knife four-way switches are correspondingly turned on to a second contact, namely No. 2 to No. 6 unit current sources are input into a second bipolar transistor branch, a seventh single-knife four-way switch is connected with a third contact, a No. 7 unit current source is input into a third bipolar transistor branch, and fourth contacts of eighth to twelfth single-knife four-way switches are connected, namely: and inputting the No. 8-12 unit current source into a fourth bipolar transistor branch, and calculating the voltage difference of the two branches of the bipolar transistor operational amplifier circuit according to a formula.
Thirdly, calculating the ratio of VBE to delta VBE through an analog-to-digital conversion integrator;
fourthly, when the dynamic matching module receives the second clock phase signal, a first contact of a twelfth single-pole four-way execution switch is connected, the 12 th unit current source is connected to the position of the 1 st unit current source, namely, a first bipolar transistor branch, and the 1 st to 11 th unit current sources are sequentially moved backwards in a progressive mode, namely, second contacts of the first to fourth single-pole four-way execution switches are connected, the 1-5 th unit current sources are communicated to a second bipolar transistor branch, a sixth single-pole four-way execution switch is adjusted, a third contact is connected, and the 6 th unit current source is input into a third bipolar transistor branch; similarly, the fourth contact of the seventh single-pole four-way switch is connected, and the No. 7 unit current source is input into the fourth bipolar transistor branch. After the steps are completed, the voltage difference of the two branches of the bipolar transistor operational amplifier circuit is calculated according to a formula, and then the third step is repeated.
And fifthly, repeating the fourth step and the third step until finishing the signal input period of the 12 unit current sources.
In the ideal case, the base-emitter voltage (V) of a bipolar transistorBE) And collector current (I)C) Satisfies the following relationship:
where k is Boltzmann constant, q is the unit charge amount, ISIs a saturation current. Assuming that the collector current ratio of the left branch and the right branch is ICR:ICL1: p, then the collector voltages of the left and right branchesDifference (. DELTA.V)BE) Satisfies the following relationship:
the current ratio is 1:5, and a total of 6 current sources are provided, wherein the current value of each current source is as follows:
Ii＝I(1+i),1≤i≤6
where I is the error of the ith current source, representing the mismatch of this current source with the average I, so the error should be 0, i.e.:
if any one current source I is taken outjThe left branch is biased, and the right branch is biased by the rest current sources, so that the current ratio of the left side to the right side is as follows:
so Δ V due to current source mismatchBEThe error of (d) can be expressed as:
if the DEM technology is adopted in the Bipolar-core circuit, Taylor expansion is carried out on the error, and third-order and high-order terms delta V are ignoredBEBecomes:
it can be seen that the current source with DEM technique has significantly reduced error compared to the current source without DEM technique. Assuming (Δ p/5) is 2%, the error with DEM technique will be only 0.2 ‰.
The basic principle of the invention is as follows: the CMOS process with 0.18 micron SMIC is adopted, the power supply voltage is 1.8V, the clock is 16KHz, and the temperature test range is from-40 ℃ to 125 ℃. The front-end circuit generates two temperature-inversely related (CTAT) voltages VBEL and VBER, and the difference Δ VBE between VBEL and VBER is a temperature-positively related (PTAT) voltage. The Zoom ADC obtains the actual output X ═ VBE/Δ VBE by calculating the ratio of VBE and Δ VBE. The output value X is inversely proportional to the temperature, and the relation between X and the actual temperature T can be obtained through multipoint calibration and digital signal processing technology. Thus, the actual temperature of the chip during operation can be calculated.
The Pre-bias circuit utilizes the I-V characteristics of bipolar transistors to bias two identical bipolar transistors with a current ratio of 1: 5. The negative feedback structure in an operational amplifier form is adopted to ensure that the voltages of the left branch and the right branch are equal, and in order to eliminate mismatch of the operational amplifier and ensure that the voltages of the left branch and the right branch are better equal, a group of chopping switch circuits are adopted in the system to modulate offset and low-frequency noise to high frequency. In this way, a set of high linearity PTAT currents can be obtained. The Bipolar-core circuit generates two CTAT voltages VBEL and VBER by mirroring the PTAT current, again using a 1:5 current ratio to bias two identical Bipolar transistors.
The technical solutions of the present invention have been described in detail through specific examples, and besides the above-described embodiments, the present invention may have other embodiments, and all technical solutions formed by using equivalents or equivalent changes fall within the scope of the present invention as claimed.
Claims (7)
1. Ultra-low power consumption intelligence temperature sensor front end circuit, including biasing circuit and bipolar transistor operational amplifier circuit, its characterized in that: the dynamic matching module and the two groups of mirror current sources are further included, and each group of mirror current sources comprises P +1 unit current sources for outputting a unit constant current;
the dynamic matching module is used for distributing each group of mirror current sources, and distributing the two groups of mirror current sources into two independent unit current sources and two distributed current sources comprising P unit current sources;
the bias circuit comprises a first bipolar transistor connected with a resistor Rb in series and a second bipolar transistor connected with the first bipolar transistor in parallel, wherein the base of the second bipolar transistor is connected with the base of the first bipolar transistor;
the bipolar transistor operational amplifier circuit comprises a third bipolar transistor and a fourth bipolar transistor which are connected in parallel, and bases of the third bipolar transistor and the fourth bipolar transistor are connected;
the first bipolar transistor and the third bipolar transistor are respectively used for receiving the independent unit current sources, and the second bipolar transistor and the fourth bipolar transistor are respectively used for receiving the P distribution current sources and respectively outputting corresponding voltage quantities.
2. The ultra-low power intelligent temperature sensor front-end circuit of claim 1, wherein: the dynamic matching module is used for generating a first clock phase signal and a second clock phase signal with the level opposite to that of the first clock phase.
3. The ultra-low power smart temperature sensor front-end circuit of claim 2, wherein: the chopper operational amplifier circuit is connected between the first bipolar transistor branch and the second bipolar transistor branch.
4. The ultra-low power smart temperature sensor front-end circuit of claim 3, wherein: the base electrode of the second bipolar transistor is also connected with a resistor R beta in series, and the resistance value of the resistor R beta is 1/P of that of the resistor Rb.
5. The ultra-low power intelligent temperature sensor front-end circuit of claim 1, wherein: and the first bipolar transistor, the second bipolar transistor, the third bipolar transistor and the fourth bipolar transistor are all PNP triodes.
6. The ultra-low power intelligent temperature sensor front-end circuit of any of claims 1 to 5, wherein: the dynamic matching module adopts a single-pole four-handle switch.
7. The method for matching an ultra-low power intelligent temperature sensor front-end circuit as claimed in claim 6, comprising the steps of:
in the first step, 2 x (P +1) unit current sources of two groups of mirror current sources are numbered from 1, 2, 3 … … 2 x (P + 1);
secondly, when the dynamic matching module receives the first clock phase signal, adjusting the single-pole four-way switch, inputting the No. 1 unit current source into the first bipolar transistor branch, inputting the No. 2-P +1 unit current source into the second bipolar transistor branch, inputting the No. P +2 unit current source into the third bipolar transistor branch, inputting the No. P + 3-2 (P +1) unit current source into the fourth bipolar transistor branch, and calculating the voltage difference of the two branches of the bipolar transistor operational amplifier circuit;
thirdly, when the dynamic matching module receives the second clock phase signal, adjusting the single-pole four-way switch, inputting the No. 2X (P +1) unit current source into the first bipolar transistor branch, inputting the No. 1 to P unit current source into the second bipolar transistor branch, inputting the No. P +1 unit current source into the third bipolar transistor branch, inputting the No. P +2 to 2P +1 unit current source into the fourth bipolar transistor branch, and repeating the second step after calculating the voltage difference of the two branches of the bipolar transistor operational amplifier circuit;
fourthly, repeating the third step until the signal input period of 12 unit current sources is completed;
fifthly, the analog-to-digital conversion integrator obtains an output X by calculating the ratio of the output voltage VBE of the front-end circuit to the delta VBE, and the back-end digital circuit obtains the actual temperature by calibrating and fitting the X.
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| CN110071696A (en) * | 2019-04-24 | 2019-07-30 | 聚辰半导体股份有限公司 | A kind of continuous time integrator can be used for temperature sensor |
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| CN114510105A (en) * | 2022-02-21 | 2022-05-17 | 深圳市山海半导体科技有限公司 | Current source circuit with circulating dynamic matching |
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