CN107082634A - 一种高频低损耗高导磁率的mp52软磁材料 - Google Patents

一种高频低损耗高导磁率的mp52软磁材料 Download PDF

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CN107082634A
CN107082634A CN201710320182.4A CN201710320182A CN107082634A CN 107082634 A CN107082634 A CN 107082634A CN 201710320182 A CN201710320182 A CN 201710320182A CN 107082634 A CN107082634 A CN 107082634A
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magnetic materials
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李前军
颜茂山
杜兴龙
徐宸
袁翔
季长贵
马鑫圣
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Taizhou Maoxiang Electronic Equipment & Materials Co Ltd
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Abstract

本发明涉及磁性材料技术领域，尤其涉及一种高频低损耗高导磁率的MP52软磁材料。本发明采用的技术方案是：一种高频低损耗高导磁率的MP52软磁材料，由氧化铁、四氧化三锰和氧化锌三种主要原材料组成基础配方并加入数种添加物构成，其配方组成范围如下：氧化铁(Fe2O3)：70.5～72.8wt％；四氧化三锰(Mn3O4):23.8～26.0wt％；氧化锌(ZnO):3.5～5.0wt％；二氧化硅(SiO2)：30～200ppm；碳酸钙(CaCO3)：200～1000ppm；四氧化三钴(Co3O4)：1000～4000ppm；三氧化二铋(Bi2O3)：0～300ppm；二氧化钛(TiO2)：0～2500ppm；氧化锆(ZrO2)：100～500ppm；氧化铜(CuO)：100～500ppm。本发明的优点是：MP52软磁材料具有高频、低损耗、高导磁率等优点，能够适应现代通信网络电子高频化的需求。

Description

一种高频低损耗高导磁率的MP52软磁材料
技术领域
本发明涉及磁性材料技术领域，尤其涉及一种高频低损耗高导磁率的MP52软磁材料。
背景技术
铁氧体是以氧化铁为主要成分的非金属磁性材料，锰锌铁氧体材料属于软磁铁氧体，具有尖晶石晶体结构，用其制成的各类电子变压器、电感器、扼流圈和磁芯等磁性组件在军事装备、高端通讯设备和仪表、通信网络及安全、电磁兼容、汽车电子、新能源、健康设备、绿色照明、办公自动化等领域起关键作用。随着现代电子和多媒体技术发展，推动各类电子整机或设备向高精度、大功率、高频化、小型化、平面化、环保化方向发展，从而对锰锌铁氧体性能提出更高要求。软磁铁氧体材料主要特点为容易磁化，也容易退磁。软磁铁氧体材料是一种用途广、产量大、成本低的基础材料，是电子、机电工业重要的支柱产品之一，它的推广应用直接影响到电子信息、家电工业、计算机与通讯、环保及节能技术的发展，也是衡量一个国家经济发达程度的标志之一。软磁铁氧体材料具有高磁导率、高电阻率、低损耗、良好的高频特性及陶瓷的耐磨性，因而在电视机的电子束偏转线圈、回扫变压器、收音机扼流圈、中周变压器、电感器、开关电源、通讯设备、滤波器、计算机、电子镇流器、LED等绿色照明、太阳能及风能等新能源、汽车电子、物联网等领域得到广泛应用；随着电子技术日益广泛的应用，特别是数字电路和开关电源应用的普及，电磁干扰(EMI)问题日益重要，世界各国对电子仪器及测量设备抗电磁干扰性能提出的标准越来越高。因此，以软磁铁氧体为基础的EMI磁性元件发展迅速，产品种类繁多，如电磁干扰抑制器、电波吸收材料、倍频器、调制器等，己成为现代军事电子设备、工业和民用电子仪器不可缺少的组成部分。
发明内容
本发明的目的是提供一种高频低损耗高导磁率的MP52软磁材料，它是一种新型的软磁铁氧体材料，该材料能够适应现代通信网络电子高频化的需求。
本发明的技术方案如下：
一种高频低损耗高导磁率的MP52软磁材料，其特征在于：由氧化铁、四氧化三锰和氧化锌三种主要原材料组成基础配方并加入数种添加物构成，其配方组成范围如下：
其中，氧化铁(Fe2O3)的含量可以为(wt％)：70.5、 70.8、71.2、71.5、71.6、71.8、72.0、72.5、72.6、72.8等。
四氧化三锰(Mn3O4)的含量可以为(wt％)：23.8、24.0、 24.3、24.6、24.8、25.2、25.3、25.5、26.0等。
氧化锌(ZnO)的含量可以为(wt％)：3.5、3.8、4.1、 4.5、、4.6、4.7、4.8、4.9、5.0等。
二氧化硅(SiO2)的含量可以为(ppm)：30、40、45、 50、87、95、98、100、118、135、143、150、180、200等。
碳酸钙(CaCO3)的含量可以为(ppm)：200、230、280、 320、400、150、500、530、550、580、600、680、720、850、960、 1000等。
四氧化三钴(Co3O4)的含量可以为(ppm)：1000、1132、 1150、1200、1480、1500、1860、1900、1950、2000、2600、2805、 3204、3250、3860、4000等。
三氧化二铋(Bi2O3)的含量可以为(ppm)：0、15、50、 80、150、155、163、235、280、300等。
二氧化钛(TiO2)的含量可以为(ppm)：0、13、18、26、55、63、75、100、138、165、185、190、200、500、1300、1500、 1850、2100、2235、2460、2500等。
氧化锆(ZrO2)的含量可以为(ppm)：100、135、162、 185、223、362、380、385、400、478、491、500等。
氧化铜(CuO)的含量可以为(ppm)：100、130、160、 180、260、285、320、375、390、400、500等。
进一步的，成份组成为：
进一步的，成份组成为：
进一步的，成份组成为：
进一步的，成份组成为：
进一步的，成份组成为：
一种高频低损耗高导磁率的MP52软磁材料的制备方法，包括从合格分供方购入的配方组成材料的物理化学特性进行检测分析，符合规定要求后，按配方比例将组成材料混合，然后依次经过振磨、轧片、整形、预烧、粗粉碎、细粉碎、制浆、配方分析与调整、喷雾造粒生产工艺流程制备。
本发明的有益效果：
本发明MP52软磁材料具有高频、低损耗、高导磁率等优点，能够适应现代通信网络电子高频化的需求。
具体实施方式
一种高频低损耗高导磁率的MP52软磁材料的制备方法，包括从合格分供方购入的配方组成材料的物理化学特性进行检测分析，符合规定要求后，按配方比例将组成材料混合，然后依次经过振磨、轧片、整形、预烧、粗粉碎、细粉碎、制浆、配方分析与调整、喷雾造粒生产工艺流程制备。
实施例一，一种高频低损耗高导磁率的MP52软磁材料，成份组成为：
实施例二，成份组成为：
实施例三，成份组成为：
实施例四，成份组成为：
实施例五，成份组成为：
与现有材料性能比较
实施例与对照例材料制成标准试样环性能对照表
从上表可以看出：本项发明的材料与以往材料相比，具有更高的导磁率和饱和磁感应强度Bs以及更低的高频磁芯损耗，可以更好的满足现代通信网络电子的高频化和小型化的要求。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明所述原理的前提下，还可以作出若干改进或替换，这些改进或替换也应视为本发明的保护范围。

Claims (7)

1.一种高频低损耗高导磁率的MP52软磁材料，其特征在于：由氧化铁、四氧化三锰和氧化锌三种主要原材料组成基础配方并加入数种添加物构成，其配方组成范围如下：
2.根据权利要求1所述的一种高频低损耗高导磁率的MP52软磁材料，其特征在于，由以下成份组成：
3.根据权利要求1所述的一种高频低损耗高导磁率的MP52软磁材料，其特征在于，由以下成份组成：
4.根据权利要求1所述的一种高频低损耗高导磁率的MP52软磁材料，其特征在于，由以下成份组成：
5.根据权利要求1所述的一种高频低损耗高导磁率的MP52软磁材料，其特征在于，由以下成份组成：
6.根据权利要求1所述的一种高频低损耗高导磁率的MP52软磁材料，其特征在于，由以下成份组成：
7.根据权利要求1所述的一种高频低损耗高导磁率的MP52软磁材料的制备方法，包括从合格分供方购入的配方组成材料的物理化学特性进行检测分析，符合规定要求后，按配方比例将组成材料混合，然后依次经过振磨、轧片、整形、预烧、粗粉碎、细粉碎、制浆、配方分析与调整、喷雾造粒生产工艺流程制备。
CN201710320182.4A 2017-05-08 2017-05-08 一种高频低损耗高导磁率的mp52软磁材料 Pending CN107082634A (zh)

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