CN107078980A - 一种模拟预失真器核心模块及模拟预失真器系统 - Google Patents

一种模拟预失真器核心模块及模拟预失真器系统 Download PDF

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CN107078980A
CN107078980A CN201480083391.6A CN201480083391A CN107078980A CN 107078980 A CN107078980 A CN 107078980A CN 201480083391 A CN201480083391 A CN 201480083391A CN 107078980 A CN107078980 A CN 107078980A
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signal
module
output
radio frequency
envelope
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CN107078980B (zh
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叶四清
汪金铭
朱尔霓
王晨
尤览
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0475—Circuits with means for limiting noise, interference or distortion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/38—Synchronous or start-stop systems, e.g. for Baudot code
    • H04L25/40—Transmitting circuits; Receiving circuits
    • H04L25/49—Transmitting circuits; Receiving circuits using code conversion at the transmitter; using predistortion; using insertion of idle bits for obtaining a desired frequency spectrum; using three or more amplitude levels ; Baseband coding techniques specific to data transmission systems
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3247—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using feedback acting on predistortion circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
    • H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
    • H03F2201/3233—Adaptive predistortion using lookup table, e.g. memory, RAM, ROM, LUT, to generate the predistortion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

本发明公开了一种APD核心模块及APD系统，属于通信领域。所述APD核心模块包括：射频延时模块、包络模块和作用矩阵模块；所述射频延时模块，用于接收前馈射频信号，根据所述前馈射频信号产生多路不同延时的射频延时信号，将每路射频延时信号输出给所述作用矩阵模块；所述包络模块，用于接收前馈射频信号，对所述前馈射频信号进行包络检测得到多路不同延时的包络信号，将每路包络信号输出给所述作用矩阵模块；所述作用矩阵模块，用于接收所述每路射频延时信号、所述每路包络信号和来自外部的预失真系数，根据所述预失真系数，所述每路射频延时信号和所述每路包络信号产生预失真信号。本发明能够有效地抵消PA产生的失真。

Description

PCT国内申请，说明书已公开。

Claims (23)

  1. PCT国内申请，权利要求书已公开。
CN201480083391.6A 2014-11-14 2014-11-14 一种模拟预失真器核心模块及模拟预失真器系统 Active CN107078980B (zh)

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PCT/CN2014/091111 WO2016074218A1 (zh) 2014-11-14 2014-11-14 一种模拟预失真器核心模块及模拟预失真器系统

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US10033413B2 (en) * 2016-05-19 2018-07-24 Analog Devices Global Mixed-mode digital predistortion
EP3523856A4 (en) 2016-10-07 2020-06-24 NanoSemi, Inc. DIGITAL BEAM ORIENTATION PREDISTORSION
EP3586439A4 (en) 2017-02-25 2021-01-06 NanoSemi, Inc. MULTI-BAND DIGITAL PRE-STORAGE DEVICE
US10141961B1 (en) 2017-05-18 2018-11-27 Nanosemi, Inc. Passive intermodulation cancellation
US10581470B2 (en) 2017-06-09 2020-03-03 Nanosemi, Inc. Linearization system
US11115067B2 (en) 2017-06-09 2021-09-07 Nanosemi, Inc. Multi-band linearization system
US10931318B2 (en) * 2017-06-09 2021-02-23 Nanosemi, Inc. Subsampled linearization system
US11323188B2 (en) 2017-07-12 2022-05-03 Nanosemi, Inc. Monitoring systems and methods for radios implemented with digital predistortion
US11303251B2 (en) 2017-10-02 2022-04-12 Nanosemi, Inc. Digital predistortion adjustment based on determination of load condition characteristics
US10644657B1 (en) 2018-05-11 2020-05-05 Nanosemi, Inc. Multi-band digital compensator for a non-linear system
WO2019217811A1 (en) 2018-05-11 2019-11-14 Nanosemi, Inc. Digital compensator for a non-linear system
JP2021524692A (ja) 2018-05-25 2021-09-13 ナノセミ， インク．Ｎａｎｏｓｅｍｉ， Ｉｎｃ． 様々な動作条件におけるデジタルプレディストーション
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US10992326B1 (en) 2020-05-19 2021-04-27 Nanosemi, Inc. Buffer management for adaptive digital predistortion
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EP3197113A1 (en) 2017-07-26
EP3197113B1 (en) 2020-06-03
CN107078980B (zh) 2020-08-25
US20170237455A1 (en) 2017-08-17
JP6501323B2 (ja) 2019-04-17
KR101954287B1 (ko) 2019-05-23
WO2016074218A1 (zh) 2016-05-19
KR20170068549A (ko) 2017-06-19
EP3197113A4 (en) 2017-10-18
JP2017534224A (ja) 2017-11-16
US9893748B2 (en) 2018-02-13

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