CN107077884B - 具有提供减少的读扰乱的传输门的七晶体管sram位单元 - Google Patents

具有提供减少的读扰乱的传输门的七晶体管sram位单元 Download PDF

Info

Publication number
CN107077884B
CN107077884B CN201580050871.7A CN201580050871A CN107077884B CN 107077884 B CN107077884 B CN 107077884B CN 201580050871 A CN201580050871 A CN 201580050871A CN 107077884 B CN107077884 B CN 107077884B
Authority
CN
China
Prior art keywords
transistor
storage node
inverter
bit cell
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580050871.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN107077884A (zh
Inventor
S-O·郑
Y·杨
S·S·宋
Z·王
C·F·耶普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry Academic Cooperation Foundation of Yonsei University
Qualcomm Inc
Original Assignee
Industry Academic Cooperation Foundation of Yonsei University
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industry Academic Cooperation Foundation of Yonsei University, Qualcomm Inc filed Critical Industry Academic Cooperation Foundation of Yonsei University
Publication of CN107077884A publication Critical patent/CN107077884A/zh
Application granted granted Critical
Publication of CN107077884B publication Critical patent/CN107077884B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
CN201580050871.7A 2014-09-27 2015-09-15 具有提供减少的读扰乱的传输门的七晶体管sram位单元 Active CN107077884B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/499,149 US10037795B2 (en) 2014-09-27 2014-09-27 Seven-transistor static random-access memory bitcell with reduced read disturbance
US14/499,149 2014-09-27
PCT/US2015/050236 WO2016048722A1 (en) 2014-09-27 2015-09-15 Seven-transistor sram bitcell with transmission gate providing reduced read disturbance

Publications (2)

Publication Number Publication Date
CN107077884A CN107077884A (zh) 2017-08-18
CN107077884B true CN107077884B (zh) 2021-03-30

Family

ID=54238579

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580050871.7A Active CN107077884B (zh) 2014-09-27 2015-09-15 具有提供减少的读扰乱的传输门的七晶体管sram位单元

Country Status (5)

Country Link
US (1) US10037795B2 (enExample)
EP (1) EP3198607B1 (enExample)
JP (1) JP6612856B2 (enExample)
CN (1) CN107077884B (enExample)
WO (1) WO2016048722A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI698871B (zh) * 2017-01-03 2020-07-11 聯華電子股份有限公司 六電晶體靜態隨機存取記憶體單元及其操作方法
KR101935664B1 (ko) 2017-04-26 2019-04-03 연세대학교 산학협력단 차등 동작이 가능한 정적 랜덤 액세스 메모리 셀
US10163493B2 (en) * 2017-05-08 2018-12-25 International Business Machines Corporation SRAM margin recovery during burn-in
US10790013B1 (en) * 2017-06-30 2020-09-29 Synopsys, Inc. Read-write architecture for low voltage SRAMs
CN112489701B (zh) * 2017-09-22 2023-12-05 联华电子股份有限公司 静态随机存取存储器组成的存储器元件
CN108231100B (zh) * 2018-03-26 2023-09-19 安徽大学 失调电压自适应数字校准型灵敏放大器
CN109684665B (zh) * 2018-11-21 2024-02-02 浙江大学城市学院 基于FinFET的三值SRAM单元电路及控制方法
TWI704575B (zh) * 2019-10-24 2020-09-11 修平學校財團法人修平科技大學 具高存取速度之７ｔ靜態隨機存取記憶體
US11462282B2 (en) * 2020-04-01 2022-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structure
TWI723944B (zh) * 2020-09-21 2021-04-01 崛智科技有限公司 記憶體裝置
EP3979248A1 (en) * 2020-09-30 2022-04-06 Imec VZW A memory macro
CN115662483B (zh) * 2022-12-26 2023-03-10 华中科技大学 Sram存储单元阵列、读写方法、控制器及系统
CN116204490B (zh) * 2023-03-03 2025-10-14 安徽大学 一种基于低电压技术的7t存算电路、乘累加运算电路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090285011A1 (en) * 2008-05-15 2009-11-19 The University Of Bristol Static random access memory
US20120230086A1 (en) * 2011-03-08 2012-09-13 National Chiao Tung University Static random access memory cell and method of operating the same
CN102903386A (zh) * 2012-09-19 2013-01-30 上海集成电路研发中心有限公司 一种静态随机存储单元

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW299448B (enExample) * 1995-07-20 1997-03-01 Matsushita Electric Industrial Co Ltd
JPH1196767A (ja) * 1997-09-26 1999-04-09 Mitsubishi Electric Corp 半導体記憶装置
US6853578B1 (en) * 2002-03-18 2005-02-08 Piconetics, Inc. Pulse driven single bit line SRAM cell
GB2417588B (en) * 2004-08-23 2008-06-04 Seiko Epson Corp Memory cell
FR2888423B1 (fr) * 2005-07-05 2008-04-11 Iroc Technologies Sa Cellule de memorisation durcie
US7420836B1 (en) 2007-02-13 2008-09-02 International Business Machines Corporation Single-ended memory cell with improved read stability and memory using the cell
US7920409B1 (en) 2007-06-05 2011-04-05 Arizona Board Of Regents For And On Behalf Of Arizona State University SRAM cell with intrinsically high stability and low leakage
US7684232B1 (en) * 2007-09-11 2010-03-23 Xilinx, Inc. Memory cell for storing a data bit value despite atomic radiation
JP5083889B2 (ja) * 2007-12-19 2012-11-28 独立行政法人産業技術総合研究所 Ｓｒａｍセル回路およびその駆動方法
US8441829B2 (en) 2009-06-12 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stable SRAM cell
WO2011013298A1 (ja) * 2009-07-29 2011-02-03 独立行政法人産業技術総合研究所 Ｓｒａｍセル
WO2011017843A1 (zh) * 2009-08-13 2011-02-17 东南大学 一种高密度、高鲁棒性的亚阈值存储单元电路
US8345469B2 (en) * 2010-09-16 2013-01-01 Freescale Semiconductor, Inc. Static random access memory (SRAM) having bit cells accessible by separate read and write paths
US8498143B2 (en) 2011-03-04 2013-07-30 Texas Instruments Incorporated Solid-state memory cell with improved read stability
TWI476768B (zh) 2011-10-21 2015-03-11 Univ Nat Chiao Tung 獨立閘極控制靜態隨機存取記憶體

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090285011A1 (en) * 2008-05-15 2009-11-19 The University Of Bristol Static random access memory
US20120230086A1 (en) * 2011-03-08 2012-09-13 National Chiao Tung University Static random access memory cell and method of operating the same
CN102903386A (zh) * 2012-09-19 2013-01-30 上海集成电路研发中心有限公司 一种静态随机存储单元

Also Published As

Publication number Publication date
US10037795B2 (en) 2018-07-31
CN107077884A (zh) 2017-08-18
EP3198607A1 (en) 2017-08-02
JP2017532710A (ja) 2017-11-02
US20160093365A1 (en) 2016-03-31
EP3198607B1 (en) 2018-12-26
WO2016048722A1 (en) 2016-03-31
JP6612856B2 (ja) 2019-11-27

Similar Documents

Publication Publication Date Title
CN107077884B (zh) 具有提供减少的读扰乱的传输门的七晶体管sram位单元
US8824230B2 (en) Method and apparatus of reducing leakage power in multiple port SRAM memory cell
US9875788B2 (en) Low-power 5T SRAM with improved stability and reduced bitcell size
US10424392B2 (en) Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods
US9865330B2 (en) Stable SRAM bitcell design utilizing independent gate FinFET
US8493774B2 (en) Performing logic functions on more than one memory cell within an array of memory cells
US8659972B2 (en) Adaptive read wordline voltage boosting apparatus and method for multi-port SRAM
US10008261B2 (en) Sense amplifier in low power and high performance SRAM
US9741430B2 (en) Static random access memory with reduced write power
US10147483B1 (en) Robust write driver scheme for static random access memory compilers
CN107025930B (zh) 用于启用/停用sram中的突发模式读取的地址检测器
KR101927583B1 (ko) 로컬 비트 라인 공유 메모리 소자 및 그 구동 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant