CN107065312A - 一种平曲面共用改善液晶显示穿透率的方法 - Google Patents
一种平曲面共用改善液晶显示穿透率的方法 Download PDFInfo
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Abstract
本发明提供一种平曲面共用改善液晶显示穿透率的方法,其包括以下步骤:(1)基于BPS工艺制程制作出基板,所述基板包括阵列基板和CF基板,其中,阵列基板一侧设置有间隔物和黑矩阵,所述CF基板一侧设置有全膜面的透明导电极;(2)利用激光在基板的指定位置处刻上标记,使CF基板在UV2A曝光机台上与所述标记对位;(3)利用激光在所述透明导电极上刻出追踪线,所述追踪线与阵列基板一侧的栅极线或数据线的遮光区对齐;(4)对基板进行曝光,掩膜版对所述追踪线进行追踪。本发明利用激光图形化的方法,克服了技术偏见而能够使BPS+UV2A兼容使用,并提供理想的穿透率,尤其为曲面液晶显示屏提供了十分理想的技术支持。
Description
技术领域
本发明涉及液晶制造领域,特别涉及一种平曲面共用改善液晶显示穿透率的方法。
背景技术
随着液晶显示技术的发展,出现了曲面屏幕,而出于曲面设计的考虑,通常采用BPS(Black Photo Spacer)设计来省去黑矩阵(Black Matrix,简称BM)制程。这是因为BPS既能起到PS(Photo Spacer,间隙控制)的支撑作用,又能在边框(frame)区遮光,即PS与黑矩阵集成于一道制程。同时,由于BPS设计在阵列(Array)基板,制作在下基板上,即可避免上下基板错位导致的光学特性不良。然而,BPS无法与UV2A技术兼容,原因将于下文进行简要的阐述。
UV2A技术为液晶垂直配向的一种方法,紫外光(UV)通过掩膜版(Mask),对像素(pixel)中不同区域进行照光,PI发生光化学反应,在液晶滴入后,可对液晶形成一定角度的配向。对比PSVA配向方法,UV2A具有液晶效率优于PSVA、液晶成本较低等优点。
如图1A和图1B所示,在UV2A制程中,需使用掩膜版1,因对像素中不同区域曝光,为保证精确性,曝光平移过程中,掩膜版1需与面板2设计中特定的图形做对位及追踪。在一般的基板中,CF侧有黑矩阵3或RGB色组,掩膜版1可与黑矩阵图形3或RGB图形对位及追踪。
如图2A和图2B所示,当使用BPS技术时,CF侧无PS、黑矩阵,只有一层ITO透明电极,因此,无任何图形供UV2A追踪曝光,故BPS+UV2A技术无法兼容,也就无法兼具BPS和UV2A的优点。
鉴于此,本发明的发明人提供一种能够使BPS+UV2A进行兼容的平曲面共用改善液晶显示穿透率的方法,从而获得更加理想的液晶显示穿透率。
发明内容
本发明的目的是提供一种平曲面共用改善液晶显示穿透率的方法,其能够使BPS+UV2A进行兼容,从而获得更加理想的液晶显示穿透率。
为达上述目的,本发明提供一种平曲面共用改善液晶显示穿透率的方法,其包括以下步骤:
(1)基于BPS工艺制程制作出基板,所述基板包括阵列基板和CF基板,其中,阵列基板一侧设置有间隔物和黑矩阵,所述CF基板一侧设置有全膜面的透明导电极;
(2)利用激光在CF基板的指定位置处刻上标记,使CF基板在UV2A曝光机台上与所述标记对位;
(3)利用激光在所述透明导电极上刻出追踪线,所述追踪线与阵列基板一侧的栅极线或数据线的遮光区对齐;
(4)对基板进行曝光,掩膜版对所述追踪线进行追踪。
所述的平曲面共用改善液晶显示穿透率的方法,其中,在步骤(2)中,所述追踪线为直线。
所述的平曲面共用改善液晶显示穿透率的方法,其中,在步骤(2)中,所述追踪线为分段的线段。
所述的平曲面共用改善液晶显示穿透率的方法,其中,在步骤(3)中,当对CF侧曝光扫描与数据线平行时,则成盒后追踪线刻在对应数据线的区域上;当对CF侧曝光扫描的方向与栅极线平行时,则成盒后追踪线刻在对应栅极线的区域上。
所述的平曲面共用改善液晶显示穿透率的方法,其中,在步骤(4)中,当完成第一象限的曝光后,将掩膜版平移半颗像素的距离,开始第二次曝光此,以完成CF基板两个象限的曝光。
所述的平曲面共用改善液晶显示穿透率的方法,其中,所述追踪线的宽度为10~150um。
所述的平曲面共用改善液晶显示穿透率的方法,其中,所述追踪线的长度贯穿整个基板。
所述的平曲面共用改善液晶显示穿透率的方法,其中,所述追踪线的的数量为1~20条。
所述的平曲面共用改善液晶显示穿透率的方法,其中,所述追踪线位于像素开口区外。
所述的平曲面共用改善液晶显示穿透率的方法,其中,所述追踪线为ITO追踪线或IZO追踪线。
本发明的有益效果是:其利用激光图形化的方法,克服了技术偏见而能够使BPS+UV2A兼容使用,并提供理想的穿透率,尤其为曲面液晶显示屏提供了十分理想的技术支持。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中:
图1A为现有技术中的UV2A制程的俯视图;
图1B为现有技术中的UV2A制程的侧视图;
图2A为现有技术中的采用BPS技术时的UV2A制程的俯视图;
图2B为现有技术中的采用BPS技术时的UV2A制程的侧视图;
图3A为根据本发明的利用激光在ITO上刻线的初始状态的俯视图;
图3B为根据本发明的利用激光在ITO上刻线的过程中的俯视图;
图4A为对CF侧曝光扫描的方向与数据线平行的示意图;
图4B显示了ITO与ITO追踪线的示意图;
图4C为ITO追踪线与数据线对齐的示意图;
图5A为对CF侧曝光扫描的方向与栅极线平行的示意图;
图5B显示了ITO与ITO追踪线的示意图;
图5C为ITO追踪线与栅极线对齐的示意图;
图6A为曝光过程中,掩膜版对激光所刻出的ITO追踪线进行追踪的示意图;
图6B为曝光过程中,掩膜版对激光所刻出的ITO追踪线进行追踪的另一示意图。
在附图中,相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
本发明一种平曲面共用改善液晶显示穿透率的方法,其主要包括以下步骤:
(1)基于BPS工艺制程制作出基板,所述基板的PS和黑矩阵均设置在阵列基板(Array)一侧,而CF(color filter)基板一侧设置有全膜面的透明导电极(ITO或IZO)7;需要说明的是,在CF基板一侧设置有全膜面的透明导电极(ITO或IZO)是BPS工艺制程的技术特点。
(2)利用激光在CF基板的指定位置处刻上标记,除了在显示区内做追踪线标记,该标记也可位于基板的四周位置,使CF基板在UV2A曝光机台上与所述标记对位,完成精准位置的配向,进行后续的成盒(Cell)制程;需要说明的是,通过设置标记能够使CF基板与阵列基板精确对位,提高产品良率。
(3)如图3A和图3B所示,利用激光按照设定位置在ITO上通过蚀刻刻出直线,所述直线(即ITO追踪线4)需要与阵列基板一侧的栅极线6或数据线5的遮光区对齐;
此处需要说明的是,当对CF侧曝光扫描与数据线5平行时,则成盒后ITO追踪线4刻在数据线区域上(如图4A至图4C所示);当对CF侧曝光扫描的方向与栅极线6平行时,则成盒后ITO追踪线4刻在栅极线区域上(如图5A至图5C所示)。在生产过程中需严格遵守该条件进行操作。
优选地,为保证CF基板上的透明导电极(ITO或IZO)的全面导通性,激光应在透明导电极(例如ITO)上刻出分段的线段。需要说明的是,所形成的ITO追踪线4为直线或线段时,其所完成的象限(domain)曝光精度是不同的,具体可根据产品需求进行选择。为了获得最优的CF基板上的透明导电极(ITO或IZO)的全面导通性,ITO追踪线4的每段线段的长度大于等于相邻线段之间的间隙。
此外需要说明的是,当ITO追踪线或IZO追踪线为直线时,其曝光精度虽不及分段的线段,然而直线的ITO追踪线或IZO追踪线所完成的象限曝光精度仍能够满足一般需求。
优选地,呈现出直线或线段形态的ITO追踪线的宽度为10~150um,并且其长度贯穿整个基板,此外ITO追踪线的数量优选为1~20条,但追踪线的数据不以此为限。
优选地,所述ITO追踪线的位置在成盒后会与阵列基板一侧的栅极线6或数据线5对齐,并位于像素(pixel)开口区外,需要说明的是,ITO追踪线位于像素开口区外不影响成像效果。
(4)如图6A和图6B所示,曝光过程中,掩膜版1对激光所刻出的ITO追踪线进行追踪,当完成第一象限(domain)的曝光后,将掩膜版1平移半颗像素(pixel)的距离,开始第二次曝光,由此,可完成CF基板两个象限的曝光。
具体地,所述掩膜版1移动的距离为(2n+1)*0.5P,其中,P为一颗像素的距离,n为0、1、2,……。即,只要掩膜版1平移(2n+1)倍的半颗像素的距离,并开始第二次曝光,即可完成CF基板两个象限的曝光。
综上所述,本发明提供了一种平曲面共用改善液晶显示穿透率的方法,利用激光图形化的方法,克服了技术偏见而能够使BPS+UV2A兼容使用,并提供理想的穿透率,尤其为曲面液晶显示屏提供了十分理想的技术支持。
虽然已经参考优选实施例对本发明进行了描述,但在不脱离本发明的范围的情况下,可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是,只要不存在结构冲突,各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例,而是包括落入权利要求的范围内的所有技术方案。
Claims (10)
1.一种平曲面共用改善液晶显示穿透率的方法,其特征在于,包括以下步骤:
(1)基于BPS工艺制程制作出基板,所述基板包括阵列基板和CF基板,其中,阵列基板一侧设置有间隔物和黑矩阵,所述CF基板一侧设置有全膜面的透明导电极;
(2)利用激光在CF基板的指定位置处刻上标记,使CF基板在UV2A曝光机台上与所述标记对位;
(3)利用激光在所述透明导电极上刻出追踪线,所述追踪线与阵列基板一侧的栅极线或数据线的遮光区对齐;
(4)对基板进行曝光,掩膜版对所述追踪线进行追踪。
2.根据权利要求1所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,在步骤(2)中,所述追踪线为直线。
3.根据权利要求1所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,在步骤(2)中,所述追踪线为分段的线段。
4.根据权利要求1所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,在步骤(3)中,当对CF侧曝光扫描与数据线平行时,则成盒后追踪线刻在对应数据线的区域上;当对CF侧曝光扫描的方向与栅极线平行时,则成盒后追踪线刻在对应栅极线的区域上。
5.根据权利要求1至4中任一项所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,在步骤(4)中,当完成第一象限的曝光后,将掩膜版平移半颗像素的距离,开始第二次曝光此,以完成CF基板两个象限的曝光。
6.根据权利要求1至4中任一项所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,所述追踪线的宽度为10~150um。
7.根据权利要求1至4中任一项所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,所述追踪线的长度贯穿整个基板。
8.根据权利要求1至4中任一项所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,所述追踪线的的数量为1~20条。
9.根据权利要求1至4中任一项所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,所述追踪线位于像素开口区外。
10.根据权利要求1至4中任一项所述的平曲面共用改善液晶显示穿透率的方法,其特征在于,所述追踪线为ITO追踪线或IZO追踪线。
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