CN107042363A - A kind of device and method of processing high-power semiconductor laser thermal sediment lamination - Google Patents

A kind of device and method of processing high-power semiconductor laser thermal sediment lamination Download PDF

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Publication number
CN107042363A
CN107042363A CN201710282243.2A CN201710282243A CN107042363A CN 107042363 A CN107042363 A CN 107042363A CN 201710282243 A CN201710282243 A CN 201710282243A CN 107042363 A CN107042363 A CN 107042363A
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CN
China
Prior art keywords
lamination
laser
tank
heat sink
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710282243.2A
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Chinese (zh)
Inventor
郭钟宁
陈玲玉
张冲
刘莉
张文斌
吴玲海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foshan Gewei Technology Co Ltd
Guangdong University of Technology
Original Assignee
Foshan Gewei Technology Co Ltd
Guangdong University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foshan Gewei Technology Co Ltd, Guangdong University of Technology filed Critical Foshan Gewei Technology Co Ltd
Priority to CN201710282243.2A priority Critical patent/CN107042363A/en
Publication of CN107042363A publication Critical patent/CN107042363A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/1224Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

A kind of device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention, including:Laser, tank;Tank upper opening, tank is equipped with liquid, tank and is provided with heat sink lamination to be processed, and heat sink lamination is immersed in the liquid in tank;Laser is aligned in above heat sink lamination, for sending high energy pulse laser to heat sink lamination, by the way that heat sink lamination to be arranged in liquid and then be laser machined, laser and liquid collective effect, so that the molten bath energy of Laser Processing is more concentrated, remove melted material clean, effectively reduce being coated with for melted material, improve crudy, the influence of Laser Processing fuel factor can either be reduced, it ensure that again and accurately process microchannel, efficiency high is laser machined simultaneously, solve to utilize wire cutting in existing cutting technique, lithography etc. is difficult to process, it is big using fuel factor is cut by laser, the serious technical problem of deformation.

Description

A kind of device and method of processing high-power semiconductor laser thermal sediment lamination
Technical field
The present invention relates to laser thermal sediment lamination field, more particularly to a kind of processing high-power semiconductor laser thermal sediment are folded The device and method of piece.
Background technology
Due to the small volume of semiconductor laser, lightweight, high conversion efficiency, long lifespan, be easy to modulation the advantages of so that Its current application in the fields such as industry, medical treatment, communication, presentation of information, military affairs is widely.High-power semiconductor laser skill Art is the important technical basis of Developing Defence Industry, its develop will push directly on fuse, tracking, guidance, weapon simulate, light a fire draw The update of the technologies such as quick-fried, radar, night vision, target identification and confrontation.Current Superpower semiconductor laser array is faced Subject matter be laser heat dissipation problem, this problem is also into current international problem, and micro-channel heat sink heat dissipation technology It is that high power semiconductor lasers fold one of state-of-the-art technology of battle array encapsulation.
At present, high-power semiconductor laser is heat sink generally using five layers of high heat conduction square with different internal engraved structures Shape sheeting combines the structure of the micro-channel heat sink of composition.MCA size is small, and shape matching is complicated.Mesh The mechanical means of preceding manufacture microchannel lamination mainly includes wire cutting, lithography and laser cutting etc..
" wire cutting " need not complicated electrode can just process any Two-dimensional Surfaces by bus of straight line, material and Capacity usage ratio is high.But have obvious defect, yielding, influence precision is processed, processing efficiency is low, and the contamination of working fluid is big.
" etching method " is simple and easy to apply, and cost is low.But easily there is lateral erosion, because liquid surface has surface tension, no It is adapted to be usually associated with heat release and deflation in the superfine lines of corrosion, course of reaction, causes corrosion uneven.
" laser cutting " is high in machining efficiency, and processing is flexible, cleavable Plane figurer, without cutter, it is not necessary to work Liquid, non-environmental-pollution problem, but fuel factor is big in process, easily produces thermal deformation.
Therefore, it is difficult to process using wire cutting, lithography etc. in existing cutting technique, using being cut by laser thermal effect Ying great, deformation is seriously those skilled in the art's technical issues that need to address.
The content of the invention
The embodiments of the invention provide a kind of device and method of processing high-power semiconductor laser thermal sediment lamination, it is used for Solve in existing cutting technique to be difficult to process using wire cutting, lithography etc., utilize big, the deformation that is cut by laser fuel factor Serious technical problem.
A kind of device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention, including:Laser Device, tank;
The tank upper opening, the tank is equipped with liquid, the tank and is provided with heat sink lamination to be processed, institute State the liquid that heat sink lamination is immersed in the tank;
The laser is aligned in above the heat sink lamination, for sending high energy pulse laser to the heat sink lamination.
Preferably, the tank equipped with liquid is specially the tank equipped with pure water.
Preferably, focus lamp is additionally provided between the laser and the heat sink lamination, for the laser to be sent out On the high energy pulse Laser Focusing gone out to heat sink lamination.
Preferably, it is provided with support in the tank;
The support is provided with the neck of middle hollow out, for placing the heat sink lamination.
Preferably, the support is provided with the flat board of high effluent trough, for by the flat board by the tissue holder from institute State in tank and propose.
Preferably, it is provided with filter screen below the neck of the support.
Preferably, multiple small sircle holes are provided with the filter screen.
A kind of method of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention, including:
Heat sink lamination to be processed is transmitted to tank and is immersed in the liquid of tank;
High energy pulse laser is sent to heat sink lamination, is laser machined.
As can be seen from the above technical solutions, the embodiment of the present invention has advantages below:
A kind of device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention, including:Laser Device, tank;The tank upper opening, the tank is equipped with liquid, the tank and is provided with heat sink lamination to be processed, institute State the liquid that heat sink lamination is immersed in the tank;The laser is aligned in above the heat sink lamination, for sending height Then energy impulse laser laser machined, laser and liquid to the heat sink lamination by the way that heat sink lamination is arranged in liquid Body collective effect so that the molten bath energy of Laser Processing is more concentrated, removes melted material clean, effectively reduces melting material Material be coated with, improve crudy, possess Laser Processing it is accurate while reduce Laser Processing in fuel factor shadow Ring, the influence of Laser Processing fuel factor can either be reduced, ensure that again and accurately process microchannel, while laser machining efficiency Height, solves to be difficult to process using wire cutting, lithography etc. in existing cutting technique, big using fuel factor is cut by laser, The serious technical problem of deformation.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, without having to pay creative labor, may be used also To obtain other accompanying drawings according to these accompanying drawings.
Fig. 1 faces for a kind of device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention Figure;
Fig. 2 is a kind of solid of the device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention Schematic diagram;
Fig. 3 is tank in a kind of device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention Schematic diagram;
Fig. 4 is a kind of device medium-height trestle of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention Schematic diagram;
Fig. 5 is workpiece in a kind of device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention The figure of (laser thermal sediment lamination).
Embodiment
The embodiments of the invention provide a kind of device and method of processing high-power semiconductor laser thermal sediment lamination, it is used for Solve in existing cutting technique to be difficult to process using wire cutting, lithography etc., utilize big, the deformation that is cut by laser fuel factor Serious technical problem.
To enable goal of the invention, feature, the advantage of the present invention more obvious and understandable, below in conjunction with the present invention Accompanying drawing in embodiment, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that disclosed below Embodiment be only a part of embodiment of the invention, and not all embodiment.Based on the embodiment in the present invention, this area All other embodiment that those of ordinary skill is obtained under the premise of creative work is not made, belongs to protection of the present invention Scope.
Fig. 1 and Fig. 2 are referred to, a kind of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention One embodiment of device, including:Laser 1, tank 4;
The upper opening of tank 4, tank 4 is equipped with liquid 6, tank 4 and is provided with heat sink lamination 5 to be processed, heat sink lamination 5 It is immersed in the liquid 6 in tank 4;
It should be noted that the liquid 6 in tank 4 can be pure water or other can absorb Laser Processing The liquid of the heat of middle generation.
Laser 1 is aligned in the heat sink top of lamination 5, for sending high energy pulse laser to heat sink lamination 5.
It should be noted that adjustable, the position of laser 1 such as energy and frequency of the high energy pulse laser that laser 1 is sent Put and be adjusted correspondingly also with the progress of Laser Processing.
A kind of device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention, including:Laser Device 1, tank 4;The upper opening of tank 4, tank 4, which is equipped with liquid 6, tank 4, is provided with heat sink lamination 5 to be processed, heat sink folded Piece 5 is immersed in the liquid 6 in tank 4;Laser 1 is aligned in the top of heat sink lamination 5, for sending high energy pulse laser to heat sink Lamination 5, by the way that heat sink lamination 5 to be arranged in liquid 6 and then be laser machined, laser and liquid collective effect so that swash The molten bath energy of light processing is more concentrated, and is removed melted material clean, is effectively reduced being coated with for melted material, improve Crudy, possess Laser Processing it is accurate while reduce Laser Processing in fuel factor influence, laser can either be reduced The influence of fuel factor is processed, ensure that again and accurately process microchannel, while laser machining efficiency high, existing cutting is solved It is difficult to process using wire cutting, lithography etc. in technology, fuel factor is big using being cut by laser, deforms serious technology and ask Topic.
Below by a kind of device of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention Another embodiment is described in detail.
Fig. 1 to Fig. 5 is referred to, a kind of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention Another embodiment of device, including:Laser 1, tank 4;
The upper opening of tank 4, tank 4 is equipped with liquid 6, tank 4 and is provided with heat sink lamination 5 to be processed, heat sink lamination 5 It is immersed in the liquid 6 in tank 4;
Laser 1 is aligned in the heat sink top of lamination 5, for sending high energy pulse laser to heat sink lamination 5.
Tank 4 equipped with liquid 6 is specially the tank 4 equipped with pure water.
It should be noted that the present embodiment is specific to be used as an implementation using the specially pure water (hereinafter referred to as water) of liquid 6 Example is described.
Focus lamp 2 is additionally provided between laser 1 and heat sink lamination 5, for the high energy pulse laser for sending laser 1 Focus on heat sink lamination 5.
Focus lamp 2 can be the configuration or the extra configuration of laser 1 of laser 1 itself.
Support 3 is provided with tank 4;
Referring to Fig. 4, this support 3 is as common desk, both sides are provided with two flat boards as the foot stool of support 3, top Portion is provided with the neck of middle hollow out, and neck is specifically that the alternate a certain distance of two pieces of flat boards is set, then by two pieces of flat boards Middle hollow out so that when heat sink lamination is put into neck, openwork part can allow heat sink lamination 5 to reveal, and can be swashed Light device 1 is laser machined.
Support 3 is provided with the neck of middle hollow out, for placing heat sink lamination 5.
Support 3 is provided with the flat board of high effluent trough 4, for being proposed from tank 4 tissue holder by flat board.
It should be noted that flat board is specifically one piece of flat board being fixedly connected with support 3, the main body of support 3 is fixed on vertically Side, a part for support 3 can also be depicted as, this flat board protrudes from tank 4, can be convenient to propose support 3.
Filter screen 7 is provided with below the neck of support 3.
The heat sink lamination 5 and residual materials of completion of processing can directly drop on filter screen 7.
Multiple small sircle holes are provided with filter screen 7.
In the present invention mainly under water, the pulse energy ripple produced using Laser Focusing processes lamination.Due to heat sink Lamination guide layer size is smaller, and linear cutter wears that silk is relatively difficult, and lithography easily produces lateral erosion, and Laser Processing can Satisfactory fluid channel is processed well, but heat affecting is than more serious.Laser power, workpiece material and the depth of water are to laser The effect effect of processing is notable.Laser power and depth of water collective effect, determine the energy density and laser spot size of focus Change, the depth of water has an effect on the closeness of underwater bubble in process, and then influences the light path of laser, causes facula position to miss Difference, changes Laser Processing radius, depth.The boiling point of material determines the size of material removing rate, and boiling point is smaller, and energy threshold is got over It is small.The absorptivity of material has reacted the efficiency that laser energy is delivered on workpiece, and absorptivity is higher, and utilization ratio of laser energy is got over It is high.These influences are embodied directly in the crudy of fluid channel, and material is bigger to the uptake of laser energy, the single arteries and veins of laser Rush removable material more, working depth is bigger, the pattern of processing is also corresponding more coarse.And the effect of contraction of water layer, also make The molten bath energy that must be laser machined more is concentrated, and is removed melted material clean, is effectively reduced being coated with for melted material, carry High crudy.
In Fig. 1,1 is laser 1, and the energy and frequency of the high energy pulse laser that laser 1 is sent etc. are adjustable.High energy pulse Laser can play a part of concentrating energy by the focusing of focus lamp 2.Whole process is all the tank 4 for up having opening It is middle to carry out.The prominent sub-fraction in the inside of support 3, for placing lamination 5, water (liquid 6) just floods copper sheet, and laser 1 is sent High energy pulse laser by focus lamp 2, acted on through water (liquid 6) on lamination 5.The underface of heat sink lamination 5 has one The filter screen 7 being made up of some small sircle holes, the workpiece processed and residual materials just directly drop on filter screen 7, directly take out Support 3 can be obtained by the workpiece processed, while workpiece to be processed is put into, the easy to operate and saving time.
The purpose of the present invention is:1st, lamination some complicated shape sizes in microchannel are difficult using wire cutting, lithography etc. Process, big using fuel factor is cut by laser, deformation is serious, underwater laser cutting lamination proposed for such case present invention, Reduce fuel factor, process microchannel;2nd, it can be realized by the device of the placement lamination specially designed and conveniently pick and place workpiece, realized Laser Underwater cuts lamination.
1st, by the use of pulse laser as machining energy source, the characteristics of processing can reduce fuel factor in water prepares under water Heat sink lamination.
2nd, the device as designed by Fig. 1 can conveniently pick and place workpiece, the position of accurate fixed workpiece, it is to avoid workpiece deform or Person slides.
Micro-channel heat sink lamination is processed in the present invention under water, the influence of Laser Processing fuel factor, and energy can either be reduced It is enough to ensure accurately to process microchannel.Laser machine efficiency high simultaneously, using this device can quick fetching workpiece, reach fast Fast, the substantial amounts of purpose for preparing the heat sink lamination for meeting processing request.
The present invention has these advantages:1st, by the use of pulse laser as machining energy source, the production effect of lamination is greatly improved Rate, by the use of as processing environment, prepared lamination microchannel is smooth, and fuel factor is small under water, without substantially deformation;2nd, device can be with Quick fetching workpiece is realized, realization is accurately positioned, prevent lamination from sliding and bending.
Because of the invention:1st, the characteristics of Laser Processing has rapidly and efficiently;2nd, the effect of contraction of water layer is processed under water, Also so that the molten bath energy of Laser Processing is more concentrated, remove melted material clean, effectively reduce applying again for melted material Cover, improve crudy;3, by adjusting the parameters such as laser energy, process time, recycle pulse laser to coordinate corresponding dress Processing microchannel lamination is put, satisfactory microchannel lamination can be fast and efficiently processed.
A kind of method of processing high-power semiconductor laser thermal sediment lamination provided in an embodiment of the present invention, including:
Heat sink lamination to be processed is transmitted to tank and is immersed in the liquid of tank;
(it is turned under it should be noted that can be transmitted heat sink lamination into tank by conveyer belt in the middle part of conveyer belt Song is simultaneously immersed in tank), manually heat sink lamination can also be positioned in tank, can also be put heat sink lamination by support It is placed in tank.
High energy pulse laser is sent to heat sink lamination, is laser machined.
In fact also include after final step:Heat sink lamination is taken out.
If a kind of standoff scheme, then support can be taken out from tank after completion of processing, then by heat sink lamination Taken out from support, then toward heat sink lamination to be processed is put into support, support is put into tank is processed next time, just Just it is quick.
Described above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations;Although with reference to before Embodiment is stated the present invention is described in detail, it will be understood by those within the art that:It still can be to preceding State the technical scheme described in each embodiment to modify, or equivalent substitution is carried out to which part technical characteristic;And these Modification is replaced, and the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical scheme.

Claims (8)

1. a kind of device of processing high-power semiconductor laser thermal sediment lamination, it is characterised in that including:Laser, tank;
The tank upper opening, the tank is equipped with liquid, the tank and is provided with heat sink lamination to be processed, the heat Heavy lamination is immersed in the liquid in the tank;
The laser is aligned in above the heat sink lamination, for sending high energy pulse laser to the heat sink lamination.
2. a kind of device of processing high-power semiconductor laser thermal sediment lamination according to claim 1, it is characterised in that The tank equipped with liquid is specially the tank equipped with pure water.
3. a kind of device of processing high-power semiconductor laser thermal sediment lamination according to claim 1, it is characterised in that Focus lamp is additionally provided between the laser and the heat sink lamination, for the high energy pulse laser for sending the laser Focus on heat sink lamination.
4. a kind of device of processing high-power semiconductor laser thermal sediment lamination according to claim 1, it is characterised in that Support is provided with the tank;
The support is provided with the neck of middle hollow out, for placing the heat sink lamination.
5. a kind of device of processing high-power semiconductor laser thermal sediment lamination according to claim 4, it is characterised in that The support is provided with the flat board of high effluent trough, for being proposed from the tank tissue holder by the flat board.
6. a kind of device of processing high-power semiconductor laser thermal sediment lamination according to claim 4, it is characterised in that Filter screen is provided with below the neck of the support.
7. a kind of device of processing high-power semiconductor laser thermal sediment lamination according to claim 6, it is characterised in that Multiple small sircle holes are provided with the filter screen.
8. a kind of method of processing high-power semiconductor laser thermal sediment lamination, it is characterised in that including:
Heat sink lamination to be processed is transmitted to tank and is immersed in the liquid of tank;
High energy pulse laser is sent to heat sink lamination, is laser machined.
CN201710282243.2A 2017-04-26 2017-04-26 A kind of device and method of processing high-power semiconductor laser thermal sediment lamination Pending CN107042363A (en)

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CN201710282243.2A CN107042363A (en) 2017-04-26 2017-04-26 A kind of device and method of processing high-power semiconductor laser thermal sediment lamination

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Application Number Priority Date Filing Date Title
CN201710282243.2A CN107042363A (en) 2017-04-26 2017-04-26 A kind of device and method of processing high-power semiconductor laser thermal sediment lamination

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262390B1 (en) * 1998-12-14 2001-07-17 International Business Machines Corporation Repair process for aluminum nitride substrates
US20080067159A1 (en) * 2006-09-19 2008-03-20 General Electric Company Laser processing system and method for material processing
CN101474721A (en) * 2009-01-16 2009-07-08 深圳市木森科技有限公司 Laser processing method and laser machining apparatus
CN202103311U (en) * 2011-07-01 2012-01-04 中国电子科技集团公司第十三研究所 Micro-channel heat sink for laser
CN103008882A (en) * 2012-12-12 2013-04-03 桂林电子科技大学 Micro-processing method and system for pulse laser fragile material
CN103894739A (en) * 2014-03-26 2014-07-02 华中科技大学 Method and device for etching and processing high-quality aluminum oxide ceramics
CN104347429A (en) * 2013-07-25 2015-02-11 常州鼎悦电子科技有限公司 Micro channel heat sink manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262390B1 (en) * 1998-12-14 2001-07-17 International Business Machines Corporation Repair process for aluminum nitride substrates
US20080067159A1 (en) * 2006-09-19 2008-03-20 General Electric Company Laser processing system and method for material processing
CN101474721A (en) * 2009-01-16 2009-07-08 深圳市木森科技有限公司 Laser processing method and laser machining apparatus
CN202103311U (en) * 2011-07-01 2012-01-04 中国电子科技集团公司第十三研究所 Micro-channel heat sink for laser
CN103008882A (en) * 2012-12-12 2013-04-03 桂林电子科技大学 Micro-processing method and system for pulse laser fragile material
CN104347429A (en) * 2013-07-25 2015-02-11 常州鼎悦电子科技有限公司 Micro channel heat sink manufacturing method
CN103894739A (en) * 2014-03-26 2014-07-02 华中科技大学 Method and device for etching and processing high-quality aluminum oxide ceramics

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Application publication date: 20170815