CN203791838U - High-quality aluminum oxide ceramic etching processing device - Google Patents
High-quality aluminum oxide ceramic etching processing device Download PDFInfo
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- CN203791838U CN203791838U CN201420139228.4U CN201420139228U CN203791838U CN 203791838 U CN203791838 U CN 203791838U CN 201420139228 U CN201420139228 U CN 201420139228U CN 203791838 U CN203791838 U CN 203791838U
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- aluminum oxide
- laser
- etching
- oxide ceramics
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Abstract
The utility model discloses a high-quality aluminum oxide ceramic etching processing device. The high-quality aluminum oxide ceramic etching processing device comprises an ultraviolet laser, a scanning galvanometer, a two-dimensional processing platform and a container. The container is arranged on the two-dimensional processing platform and is used for containing water and aluminum oxide ceramics to be etched and processed. The distance from the surface of the water to the surface of the aluminum oxide ceramics ranges from 2mm to 12mm. The scanning galvanometer is arranged on a light emitting path of the ultraviolet laser and is used for focusing laser beams emitted from the ultraviolet laser to the surface of the aluminum oxide ceramics. The 'water' is skillfully introduced, so that the aluminum oxide ceramics can be subjected to cooling and deslagging of laser etching underwater, black coating and deterioration in the process of direct etching in the air are effectively avoided, etching depth is increased, and etching quality and laser etching processing efficiency are improved. By the aid of the high-quality aluminum oxide ceramic etching processing device, various three-dimensional complicated patterns high in size accuracy can be manufactured on the surface of the aluminum oxide ceramics by laser etching.
Description
Technical field
The utility model relates to field of laser processing, relates in particular to laser ablation processed alumina ceramic field, is specially a kind of lithography device of high quality aluminum oxide pottery.
Background technology
Alumina ceramic material is one of ceramic material being most widely used at present, has become indispensable material in fields such as biology, microelectronics, chemical industry.But, because aluminium oxide ceramics exists the shortcomings such as the poor and fracture toughness of thermal shock resistance is low, make it in traditional machining, run into larger difficulty.Traditional processing mode such as turning, milling cannot adapt to the processing request of modern science and technology to high-accuracy complex parts.Mechanical means is all limited in the processing of linear pattern, large-size and simple graph etc. to cutting, the punching etc. of aluminium oxide ceramics, this has limited the application of aluminium oxide ceramics in field of micro-Na manufacture.Except the method for mechanical lithography, also have the methods such as spark machined, ultrasonic wave processing at present.But the spark erosion technique difficulty of ceramic material is larger, is prone to pollution; Ultrasonic wave processing exists inefficiency and the problem such as tool wear is serious.
Laser has solved the insurmountable problem of many traditional cutting technologies in the application in machining field in recent years.Ultra-Violet Laser is because its wavelength is short, photon energy is large, easily obtain less focal beam spot, the chemical bond that can directly destroy processed polymeric material carries out Precision Machining, the process that realizes " cold working ", is more and more subject to people's attention in the research in the fields such as microelectronics pottery, precision optics materials processing in recent years.But Ultra-Violet Laser is in air when direct etching alumina ceramic material, the high power density laser direct irradiation material that is etched can cause the temperature of material surface will be elevated to rapidly fusing or gasification temperature.When alumina ceramic material inevitably can cause that in the fusion process of 2050～2980K the crystalline phase of aluminium oxide ceramics changes, and forms α-A1
2o
3and γ-Al
2o
3mixing is main black metamorphic layer mutually, and heavily solidifying layer is comparatively obvious, has a strong impact on micro-crudy and the dimensional accuracy of laser ablation aluminium oxide ceramics material.
Utility model content
Be a difficult problem for solving above, the utility model has provided a kind of lithography device of high quality aluminum oxide pottery, and object is to avoid black metamorphic layer and heavily solidifying layer to occur, and surface is without blackout metamorphic layer, and etching efficiency is higher, and implementation procedure is simple.
The lithography device of a kind of aluminium oxide ceramics that the utility model provides, is characterized in that, this device comprises ultraviolet laser, scanning galvanometer, two-dimentional processing platform, and container;
Described container is positioned on described two-dimentional processing platform, and this container is for being filled with water and the aluminium oxide ceramics of processing to be etched, and the surface of described water is 2mm-12mm to aluminium oxide ceramics surface distance; Described scanning galvanometer is positioned in the bright dipping light path of described ultraviolet laser, and this scanning galvanometer is for focusing on described aluminium oxide ceramics surface by the laser beam of ultraviolet laser transmitting.
On described container, can set into aquaporin and exhalant canal.
With the aerial Ultra-Violet Laser etching oxidation of routine aluminium ceramic phase ratio, the utility model is introduced the factor of " water " cleverly, under water aluminium oxide ceramics is carried out to the cooling of laser ablation and deslagging effect, effectively avoid the blackout denaturalization phenomenon that in air, direct etching occurs, and also increase etching depth, improve etching quality and improved laser ablation working (machining) efficiency, having utilized the utility model can produce in aluminium oxide ceramics surface laser etching the 3 D complex pattern of various high dimensional accuracies.
Brief description of the drawings
Fig. 1 is the schematic diagram of Ultra-Violet Laser etching oxidation aluminium pottery under stationary water;
Fig. 2 is the schematic diagram of Ultra-Violet Laser etching oxidation aluminium pottery under circulating water.
Detailed description of the invention
General principle of the present utility model is that alumina ceramic material is immersed in the water to certain depth (water surface is about 2～12mm to the distance of laser ablation material surface).Water is enclosed in a container, can be static or with certain speed flow (1～8mm/s).UV laser beam, by scanning galvanometer control etching trace, sees through water layer and focuses on alumina ceramic material surface.When Ultra-Violet Laser carries out lithography under water, because specific heat of water is much larger than ceramic material, therefore, the cooling effect of water makes the temperature of ceramic material etching surface not reach ceramic material melting temperature, and the mechanism that now material is removed is to utilize Ultra-Violet Laser Multiphoton Absorbtion effect to interrupt the photochemical effect removing method of the chemical bond of ceramic material.Thereby pottery also can not undergo phase transition in lower temperature, thereby avoid producing after laser ablation blackout denaturalization phenomenon completely.Another advantage that laser carries out lithography is under water to produce " cavity " this physical phenomenon, forms the high-speed jet of pointing to target surface.The impulsive force that this high-speed jet produces often can reach the order of magnitude of MPa, form the thump effect to material matrix, making to remove the material of erosion because of laser action hightails, therefore improved the laser ablation degree of depth, and because making the material after erosion, the inhibition of water cannot again be attached on matrix surface, so both ensured the impact that the ceramic surface after etching is not heavily coagulated by residue, that can accelerate again material goes to lose speed.
Below in conjunction with accompanying drawing, detailed description of the invention of the present utility model is described further.It should be noted that at this, be used for helping to understand the utility model for the explanation of these embodiments, but do not form restriction of the present utility model.In addition,, in each embodiment of described the utility model, involved technical characterictic just can combine mutually as long as do not form each other conflict.
As shown in Figure 1, device provided by the invention comprises ultraviolet laser, scanning galvanometer 6, two-dimentional processing platform 4, and for filling the container 3 of water 2 and aluminium oxide ceramics 1 to be processed;
Aluminium oxide ceramics to be processed is arranged in the container that fills water in the time of lithography, and the surface of water is 2mm-12mm to aluminium oxide ceramics surface distance, and this container is positioned on described two-dimentional processing platform; The laser beam 5 of described ultraviolet laser transmitting focuses on the enterprising line scanning lithography in described aluminium oxide ceramics surface by the control of scanning galvanometer, and the aluminium oxide ceramics surface after lithography is without blackout metamorphic layer and heavily solidifying layer.
Water can be pure water or can be also ordinary tap water.
The process that uses said apparatus to carry out lithography comprises the steps:
The 1st step is cleaned alumina ceramic plate;
The alumina ceramic material after cleaning is put into Flat bottom container by the 2nd step, adds a certain amount of water logging not have alumina ceramic material, and water surface is 2mm～12mm to alumina ceramic material surface distance, guarantees alumina ceramic material integral level and is immersed in the water.Water in container can be static or with the speed with certain flow (as 1～8mm/s);
The 3rd step is placed on the container that water and ceramic material are housed on Ultra-Violet Laser processing platform, laser facula is seen through to water layer and focus on ceramic surface, laser parameter is set as follows: laser repetition rate 30～100kHz; Laser pulse energy metric density 48.0～85.5J/cm2; Laser scanning speed 40～180mm/s.Make to carry out scanning plasma etching according to the figure designing in software.
Device shown in Fig. 2 is provided with into water channel 8 and exhalant canal 9 on container 7.Alumina ceramic material 1 is placed in the container 7 that fills certain thickness water 2, making the surface of water is 2-12mm to ceramic surface distance, container 7 has into water channel 8 and exhalant canal 9, and water 2 flows into container 7 containers from entering water channel 8, from exhalant canal 9 flow containers 7; Container 7 is placed on two-dimentional processing platform 4.UV laser beam 5 focuses on the surperficial enterprising line scanning lithography of ceramic material 1 by the control of scanning galvanometer 6.Laser scanning lithography parameter is respectively: laser repetition rate 30～100kHz, laser pulse energy metric density 48.0～85.5J/cm
2, laser scanning speed 40～180mm/s, water 2 flow velocitys are 1～8mm/s.
Example 1:
The all solid state tune of the Awave-355-10W-25K model Q ultraviolet laser that the utility model has adopted light wave company of the U.S. to make, output wavelength is 355nm, pulse energy from 0 to 500 μ J, frequency is 10 to 100kHz, carries out under water the laser ablation processing of aluminium oxide ceramics.Adopt Ultra-Violet Laser lithography parameter in shown in table one.Adopt the utility model to obtain aluminium oxide ceramics etching quality and reached the effect obviously declining without blackout metamorphic layer, etching bottom surface roughness.
Table one
Example 2:
The all solid state tune of the Awave-355-10W-25K model Q ultraviolet laser that the utility model has adopted light wave company of the U.S. to make, output wavelength is 355nm, pulse energy from 0 to 500 μ J, frequency is 10 to 100kHz, carries out under water the lithography of aluminium oxide ceramics.The Ultra-Violet Laser lithography parameter adopting is in shown in table two.Adopt the utility model to obtain aluminium oxide ceramics etching quality and reached the effect obviously declining without blackout metamorphic layer, etching bottom surface roughness.
Table two
Example 3:
The all solid state tune of the Awave-355-10W-25K model Q ultraviolet laser that the utility model has adopted light wave company of the U.S. to make, output wavelength is 355nm, pulse energy from 0 to 500 μ J, frequency is 10 to 100kHz, carries out under water the lithography of aluminium oxide ceramics.Adopt Ultra-Violet Laser lithography parameter in shown in table three.Adopt the utility model to obtain aluminium oxide ceramics etching quality and reached the effect obviously declining without blackout metamorphic layer, etching bottom surface roughness.
Table three
The above is preferred embodiment of the present utility model, but the utility model should not be confined to the disclosed content of this embodiment and accompanying drawing.Do not depart from the equivalence or the amendment that under spirit disclosed in the utility model, complete so every, all fall into the scope of the utility model protection.
Claims (2)
1. a lithography device for aluminium oxide ceramics, is characterized in that, this device comprises ultraviolet laser, scanning galvanometer, two-dimentional processing platform, and container;
Described container is positioned on described two-dimentional processing platform, and this container is for being filled with water and the aluminium oxide ceramics of processing to be etched, and the surface of described water is 2mm-12mm to aluminium oxide ceramics surface distance; Described scanning galvanometer is positioned in the bright dipping light path of described ultraviolet laser, and this scanning galvanometer is for focusing on described aluminium oxide ceramics surface by the laser beam of ultraviolet laser transmitting.
2. the lithography device of aluminium oxide ceramics according to claim 1, is characterized in that, described container has into aquaporin and exhalant canal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420139228.4U CN203791838U (en) | 2014-03-26 | 2014-03-26 | High-quality aluminum oxide ceramic etching processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420139228.4U CN203791838U (en) | 2014-03-26 | 2014-03-26 | High-quality aluminum oxide ceramic etching processing device |
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| Publication Number | Publication Date |
|---|---|
| CN203791838U true CN203791838U (en) | 2014-08-27 |
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|---|---|---|---|
| CN201420139228.4U Expired - Fee Related CN203791838U (en) | 2014-03-26 | 2014-03-26 | High-quality aluminum oxide ceramic etching processing device |
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| CN (1) | CN203791838U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103894739A (en) * | 2014-03-26 | 2014-07-02 | 华中科技大学 | Method and device for etching and processing high-quality aluminum oxide ceramics |
| CN106001939A (en) * | 2016-06-27 | 2016-10-12 | 维沃移动通信有限公司 | Cutting method of ceramic substrate and electronic device |
-
2014
- 2014-03-26 CN CN201420139228.4U patent/CN203791838U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103894739A (en) * | 2014-03-26 | 2014-07-02 | 华中科技大学 | Method and device for etching and processing high-quality aluminum oxide ceramics |
| CN106001939A (en) * | 2016-06-27 | 2016-10-12 | 维沃移动通信有限公司 | Cutting method of ceramic substrate and electronic device |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140827 Termination date: 20200326 |