CN107037696B - The method for improving alignment precision - Google Patents
The method for improving alignment precision Download PDFInfo
- Publication number
- CN107037696B CN107037696B CN201710458343.6A CN201710458343A CN107037696B CN 107037696 B CN107037696 B CN 107037696B CN 201710458343 A CN201710458343 A CN 201710458343A CN 107037696 B CN107037696 B CN 107037696B
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- China
- Prior art keywords
- litho pattern
- litho
- alignment precision
- improving
- photoetching process
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
Abstract
A kind of method for improving alignment precision of the present invention, comprising: provide compound mask version, the compound mask version includes the first litho pattern and the second litho pattern of mirror symmetry；First time photoetching process is carried out by exposure mask of first litho pattern；Second of photoetching process is carried out by exposure mask of second litho pattern of overturning, first time photoetching process and the figure that second of photoetching process is formed are in the same direction.In the present invention, first time photoetching process is identical with the direction of graphics expansion in second of photo-etching technological process, convenient for the contraposition of first time litho pattern and the second litho pattern, improves alignment precision.
Description
Technical field
The present invention relates to technical field of semiconductor lithography more particularly to a kind of methods for improving precision of playing truant.
Background technique
The alignment precision of photoetching is to measure one of the key parameter of photoetching process, it refer on silicon wafer upper layer and lower layer figure it
Between offset, the quality of alignment precision will directly affect the performances of final products.There are many factor for influencing alignment precision, packet
It includes: the overlay mark of quality, silicon wafer deformation and photoetching process itself that heat treatment process, film except photoetching process are grown
Quality, litho machine alignment, photoetching machine lens expanded by heating and mask plate expanded by heating etc..
In actual exposure process, mask plate can be heated after the irradiation of deep ultraviolet light and generate thermal expansion effect
It answers, as shown in Figure 1, dotted portion is the mask plate schematic diagram after expanded by heating, the thermal expansion of mask plate will directly affect silicon wafer
On graphical quality, and then influence upper layer and lower layer figure alignment precision.It, can be with typically, for the thermal expansion of mask plate
It is maked corrections by the imaging system of litho machine, to correct influence of the thermal expansion for picture distortion of mask plate, to reduce
Influence to alignment precision, but the method for this correction are suitable only for the thermal expansion consistent mask plate in direction, i.e., only to single layer
Mask plate is effective.But it in actual production and R&D process, in order to save the cost of mask plate, is often covered using two-in-one
Film version, so-called two-in-one mask plate, i.e. left and right or there are two litho patterns for distribution up and down on every piece of mask plate, such as Fig. 2 a or 2b institute
The first litho pattern 101 and the second litho pattern 102 shown, the figure of usual first litho pattern 101 and the second litho pattern 102
Shape direction is consistent.For this two-in-one mask plate, the first litho pattern 101 and the exposure of the second litho pattern 102 are being carried out respectively
Light time, only the half of mask plate is exposed and expanded by heating every time, and the other half is thermally expanded because unexposed without generating, because
The thermal expansion shape generated after this first litho pattern 101 and the exposure of the second litho pattern 102 is different, as shown in Fig. 3 a, 3b,
Wherein Fig. 3 a indicates the thermal expansion condition generated after the exposure of the first litho pattern, because only the top half of mask plate is heated,
And lower half portion is not heated, therefore produces reverse trapezoid shape 111, similarly, Fig. 3 b is generated after indicating the exposure of the second litho pattern
Thermal expansion condition, be a trapezoid shape 112, the different inflated configurations of the first lithography layer 101 and the second lithography layer 102 cause
The direction that the photoetching offset plate figure being formed on silicon wafer generates distortion is also just different, when the first litho pattern 101 and the second photoetching
When needing to realize alignment between figure 102, as shown in figure 4, the reverse trapezoid shape 111 and second after the thermal expansion of the first litho pattern
Trapezoid shape 112 after litho pattern thermal expansion can not be completely coincident together, to influence the first litho pattern 101 and the
The alignment precision of two litho patterns 102.
Summary of the invention
The object of the present invention is to provide a kind of methods for improving alignment precision, provide compound mask version and carry out light twice
The alignment precision at quarter.
To achieve the goals above, a kind of method for improving alignment precision of the present invention, comprising:
Compound mask version is provided, the compound mask version includes the first litho pattern and the second photoetching figure of mirror symmetry
Shape；
First time photoetching process is carried out by exposure mask of first litho pattern；
Second of photoetching process, first time photoetching process and second are carried out by exposure mask of second litho pattern of overturning
The figure that secondary photoetching process is formed is in the same direction.
Further, first litho pattern and second litho pattern are in the horizontal direction or on vertical direction at mirror
As symmetrical.
Further, the step of carrying out first time photoetching process as exposure mask using first litho pattern includes: with described
First litho pattern is that exposure mask is exposed, develops, and forms the substrate with the first litho pattern；With first litho pattern
For substrate described in mask etching, the etch layer with the first litho pattern is formed.
Further, further includes: in exposure process, the thermal expansion of the compound mask version is compensated and corrected, to subtract
Small picture distortion.
Further, after progress first time photoetching process further include: ion implanting, thin film growth process.
Further, include: by the step of exposure mask second of photoetching process of progress of second litho pattern of overturning
It is exposed, developed as exposure mask using second litho pattern of overturning, form the substrate with the second litho pattern, the lining
The second litho pattern and the first litho pattern on bottom is in the same direction.
Further, further includes: be alignment and alignment mesh with the etch layer with the first litho pattern in exposure process
Mark.
Further, further includes: in exposure process, the thermal expansion of the compound mask version is compensated and corrected, to subtract
Small picture distortion.
Further, the step of second litho pattern of overturning includes: rotation and/or the overturning compound mask
Version；Or change litho machine imaging system；Or it realizes in such a way that the two combines.
Further, increase at least one piece of camera lens or eyeglass in litho machine imaging system.
Compared with prior art, the method for raising alignment precision of the invention has the advantages that
In the present invention, first time photoetching process is carried out by exposure mask of first litho pattern, with described the second of overturning
Litho pattern is that exposure mask carries out second of photoetching process, so that the figure that first time photoetching process and second of photoetching process are formed
In the same direction, so that first time photoetching process is identical with the direction of graphics expansion in second of photo-etching technological process, it is convenient for first time light
The contraposition of needle drawing shape and the second litho pattern improves alignment precision.
Detailed description of the invention
Fig. 1 is the schematic diagram of litho pattern thermal expansion in the prior art；
Fig. 2 a~Fig. 2 b is the structural schematic diagram of two-in-one mask plate in the prior art；
Fig. 3 a is the schematic diagram of the first litho pattern thermal expansion in the prior art；
Fig. 3 b is the schematic diagram of the second litho pattern thermal expansion in the prior art；
Fig. 4 is the schematic diagram of the first litho pattern and the contraposition of the second litho pattern in the prior art；
Fig. 5 is the flow chart that alignment precision method is improved in the present invention；
Fig. 6 a is the structural schematic diagram of compound mask version in one embodiment of the invention；
Fig. 6 b is the structural schematic diagram of compound mask version in another embodiment of the present invention；
Fig. 7 a is the schematic diagram for forming third litho pattern in one embodiment of the invention after the thermal expansion of the first litho pattern；
Fig. 7 b is the signal that the 4th litho pattern is formed after the second litho pattern of one embodiment of the invention overturning thermally expands
Figure；
Fig. 8 is the schematic diagram for increasing camera lens or eyeglass in one embodiment of the invention in optical imaging systems.
Specific embodiment
It is described in more detail below in conjunction with method of the schematic diagram to raising alignment precision of the invention, wherein indicating
The preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify invention described herein, and still real
Existing advantageous effects of the invention.Therefore, following description should be understood as the widely known of those skilled in the art, and simultaneously
Not as limitation of the present invention.
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Core of the invention thought is, provides a kind of method for improving alignment precision, comprising: compound mask version is provided,
The compound mask version includes the first litho pattern and the second litho pattern of mirror symmetry；It is to cover with first litho pattern
Film carries out first time photoetching process；Second of photoetching process is carried out by exposure mask of second litho pattern of overturning, for the first time
Photoetching process and the figure that second of photoetching process is formed are in the same direction.In the present invention, first time photoetching process and second of photoetching work
The direction of graphics expansion is identical during skill, convenient for the contraposition of first time litho pattern and the second litho pattern, improves alignment essence
Degree.
The method for improving alignment precision to the present invention below in conjunction with attached drawing is specifically described.
Refering to what is shown in Fig. 5, in the present invention improve alignment precision method the following steps are included:
Step S1 is executed, with reference to shown in Fig. 6 a, provides compound mask version, the compound mask version includes the of mirror symmetry
One litho pattern 201 and the second litho pattern 202, first litho pattern 201 is with second litho pattern 202 vertical
It is mirrored on direction symmetrical.Certainly, in other embodiments of the invention, first litho pattern 201 and second light
Needle drawing shape 202 is mirrored into the horizontal direction symmetrically, with reference to shown in Fig. 6 b.
Step S2 is executed, is that exposure mask carries out first time photoetching process with first litho pattern 201, specifically, with institute
Stating the step of the first litho pattern 201 is exposure mask progress first time photoetching process includes: with reference to shown in Fig. 7 a, with first light
Needle drawing shape 201 is that exposure mask is exposed, develops, and forms the substrate with third litho pattern 211, first time photo-etching technological process
In exposure process in, further includes: the thermal expansion of the compound mask version is compensated and corrected, to reduce the mistake of picture distortion
Journey；Then, it is substrate described in mask etching with the third litho pattern 211, forms the photoetching with third litho pattern 211
Layer.Further, after progress first time photoetching process further include: ion implanting, thin film growth process etc..
Execute step S3, with overturn after second litho pattern 202 be exposure mask carry out second of photoetching process, first
Secondary photoetching process and the figure that second of photoetching process is formed are in the same direction.Specifically, with second litho pattern 202 after overturning
The step of carrying out second of photoetching process for exposure mask includes: with reference to shown in Fig. 7 b, with second litho pattern 202 after overturning
It is exposed, develops for exposure mask, the substrate of the 4th litho pattern 212 after there is overturning is formed, after the overturning on the substrate
The 4th litho pattern 212 with third litho pattern 211 in the same direction, the step of overturning the second litho pattern 202 in the present invention
It include: rotation and/or the overturning compound mask version；Or change litho machine imaging system；Or in such a way that the two combines
To realize.Refering to what is shown in Fig. 8, increasing at least one piece of camera lens or eyeglass, in litho machine imaging system to overturn second light
Needle drawing shape 202.In the exposure process of second of photoetching process, further includes: compensated to the thermal expansion of the compound mask version
Amendment, to reduce the process of picture distortion；It then, is to be served as a contrast described in mask etching with the 4th litho pattern 212 after the overturning
Bottom forms the lithography layer of the 4th litho pattern 212 after having overturning.
It should be noted that second of photoetching process is carried out by exposure mask of second litho pattern of overturning, so that the
Photoetching process and the figure that second of photoetching process is formed are in the same direction, thus first time photoetching process and second of photoetching process
The direction of graphics expansion is identical in the process, in the exposure process of second of photoetching process, with the etching with the first litho pattern
Layer is alignment and alignment target, convenient for the contraposition of second of litho pattern and the first litho pattern, raising alignment precision.
In conclusion it is provided by the invention improve alignment precision method in, using first litho pattern as exposure mask into
Row first time photoetching process carries out second of photoetching process by exposure mask of second litho pattern of overturning, so that for the first time
Photoetching process and the figure that second of photoetching process is formed are in the same direction, thus first time photoetching process and second of photo-etching technological process
The direction of middle graphics expansion is identical, convenient for the contraposition of first time litho pattern and the second litho pattern, improves alignment precision.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of method for improving alignment precision characterized by comprising
Compound mask version is provided, the compound mask version includes the first litho pattern and the second litho pattern of mirror symmetry；
First time photoetching process is carried out by exposure mask of first litho pattern；
Second of photoetching process, first time photoetching process and second of light are carried out by exposure mask of second litho pattern of overturning
The figure that carving technology is formed is in the same direction.
2. improving the method for alignment precision as described in claim 1, which is characterized in that first litho pattern and described the
Two litho patterns are mirrored into symmetrically in the horizontal direction or on vertical direction.
3. improving the method for alignment precision as described in claim 1, which is characterized in that using first litho pattern as exposure mask
The step of carrying out first time photoetching process includes: to be exposed, develop using first litho pattern as exposure mask, is formed with the
The substrate of three litho patterns；Using the third litho pattern as substrate described in mask etching, being formed has third litho pattern
Etch layer.
4. improving the method for alignment precision as claimed in claim 3, which is characterized in that further include: in exposure process, to described
The thermal expansion of compound mask version compensates and corrects, to reduce picture distortion.
5. improving the method for alignment precision as claimed in claim 3, which is characterized in that gone back after first time photoetching process
It include: ion implanting, thin film growth process.
6. improving the method for alignment precision as claimed in claim 3, which is characterized in that with second litho pattern of overturning
The step of carrying out second of photoetching process for exposure mask includes: to be exposed, shown as exposure mask using second litho pattern of overturning
Shadow forms the substrate with the 4th litho pattern, and the 4th litho pattern and third litho pattern on the substrate are in the same direction.
7. improving the method for alignment precision as claimed in claim 6, which is characterized in that further include: in exposure process, to have
The etch layer of first litho pattern is alignment and alignment target.
8. improving the method for alignment precision as claimed in claim 6, which is characterized in that further include: in exposure process, to described
The thermal expansion of compound mask version compensates and corrects, to reduce picture distortion.
9. improving the method for alignment precision as claimed in claim 6, which is characterized in that second litho pattern of overturning
Step includes: rotation and/or the overturning compound mask version；Or change litho machine imaging system；Or combined by the two
Mode is realized.
10. improving the method for alignment precision as claimed in claim 9, which is characterized in that increase in litho machine imaging system
At least one piece of camera lens or eyeglass.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710458343.6A CN107037696B (en) | 2017-06-16 | 2017-06-16 | The method for improving alignment precision |
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|---|---|---|---|
| CN201710458343.6A CN107037696B (en) | 2017-06-16 | 2017-06-16 | The method for improving alignment precision |
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| CN107037696A CN107037696A (en) | 2017-08-11 |
| CN107037696B true CN107037696B (en) | 2019-11-22 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799675B (en) * | 2019-01-18 | 2022-07-15 | 成都路维光电有限公司 | Mask equipment process debugging method |
| CN113885300A (en) * | 2021-09-14 | 2022-01-04 | 拾斛科技(南京)有限公司 | Wafer alignment microscope, photoetching machine, bonding machine and stamping machine |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687031A (en) * | 1979-12-18 | 1981-07-15 | Dainippon Screen Mfg Co Ltd | Photographic printing method and original plate for printing used in execution of this method |
| JP3110796B2 (en) * | 1991-06-18 | 2000-11-20 | 大日本印刷株式会社 | Reticle alignment method and exposure apparatus |
| TWI225574B (en) * | 2003-05-01 | 2004-12-21 | Nanya Technology Corp | Photomask structure and method of reducing lens aberration and pattern displacement |
| KR20070077688A (en) * | 2006-01-24 | 2007-07-27 | 주식회사 하이닉스반도체 | Exposural system and method for manufacturing semiconductor device using the same |
| CN103019042B (en) * | 2012-11-29 | 2015-01-07 | 上海华力微电子有限公司 | Method for improving stability of alignment precision of high-transparency mask plate |
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